CN112309634A - Etching mark optimization method and conductive film - Google Patents
Etching mark optimization method and conductive film Download PDFInfo
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- CN112309634A CN112309634A CN202011016910.0A CN202011016910A CN112309634A CN 112309634 A CN112309634 A CN 112309634A CN 202011016910 A CN202011016910 A CN 202011016910A CN 112309634 A CN112309634 A CN 112309634A
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- H—ELECTRICITY
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- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
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- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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Abstract
The invention provides an etching mark optimization method and a conductive film, wherein the method mainly comprises the following steps: obtaining a conductive film to be optimized, wherein the conductive film comprises an inner layer conductive silver wire and an outer layer silver impurity; respectively determining a first absorption spectrum and a second absorption spectrum corresponding to the inner layer conductive silver wire and the outer layer silver impurities, wherein any first wavelength in the first absorption spectrum is larger than any second wavelength in the second absorption spectrum; and respectively irradiating the conductive film by using laser with a first wavelength and laser with a second wavelength to passivate the outer silver impurities of the conductive film, so that the haze of the conductive film is reduced, and the etching mark display effect of the conductive film is optimized. After the particles absorb the spectrum, surface plasma resonance occurs, so that oxidation occurs, and the reflection gloss is lost, namely passivation is achieved, and therefore haze is reduced, and etching marks are reduced.
Description
Technical Field
The invention relates to the technical field of touch control, in particular to an etching mark optimization method and a conductive film.
Background
Silver nanowires are used as a novel ITO (indium tin oxide) substitute material and are widely applied to the field of transparent conductive films for touch screens at present.
The performance of the nano silver wire in the angles of impedance and bending flexibility is far stronger than that of ITO, so that the nano silver has irreplaceable advantages in the application field of medium-size and large-size touch devices; however, in the application field of small-sized touch devices, the unique 'shadow eliminating' technology of ITO achieves the effects of reducing etching marks and achieving 'shadow eliminating' by changing the refractive index of the coating, so that the manufactured touch device cannot detect the etching marks at a close-range visual angle; the nano silver wire can also generate etching traces after being patterned, but the optical principle generated by the nano silver wire etching traces is different from that of ITO, and the nano silver wire cannot be used for etching traces of small pieces by using similar technology, so that the application of the nano silver wire in a small-size touch device cannot be broken through all the time.
The common consensus in the industry at present is that the diameter of the nano silver wire is made small enough (for example, less than 15nm), the optical reflection and scattering caused by the nano silver wire with the extremely small size are small, and the reduction of the optical haze of a formed film is obvious (in the industry, the high haze is considered as a main reason for etching marks), so that the influence of the etching marks is weakened. But there are significant limitations to doing so: the synthesis of the nano silver wires with small wire diameter is difficult, the proportion of the nano silver wires in the synthesized product is reduced along with the reduction of the wire diameter, and the impurities such as a large amount of nano silver particles, short rods and the like are increased, and meanwhile, the nano silver wires with small wire diameter are equivalent to the nano silver particles and the short rods in the angles of self gravity and buoyancy, so that the high-purity nano silver wires are difficult to obtain by common purification methods such as gravity water sedimentation, centrifugation, cross flow, acetone and the like, the impurity content in the purified product is high, and the damage to the optical Haze after film forming is obvious (the impurities such as the nano silver particles, the short rods and the like which do not contribute to the film forming conductivity negatively influence the optical Haze and the chromaticity a/b);
in view of the above technical problems, it is urgently needed to provide a solution that can effectively improve the etching mark problem after patterning of the silver nanowires, so as to achieve a wider market application.
Disclosure of Invention
The embodiment of the invention provides an etching mark optimization method and a conductive film, which aim to optimize the technical problem of etching mark display of the conventional conductive film.
In order to achieve the purpose, the invention provides the following specific scheme:
in a first aspect, an embodiment of the present invention provides a method for optimizing an etch mark, including:
obtaining a conductive film to be optimized, wherein the conductive film comprises an inner layer conductive silver wire and an outer layer silver impurity;
respectively determining a first absorption spectrum and a second absorption spectrum corresponding to the inner layer conductive silver wire and the outer layer silver impurities, wherein any first wavelength in the first absorption spectrum is larger than any second wavelength in the second absorption spectrum;
and respectively irradiating the conductive film by using laser with a first wavelength and laser with a second wavelength to passivate the outer silver impurities of the conductive film, so that the haze of the conductive film is reduced, and the etching mark display effect of the conductive film is optimized.
Optionally, the first absorption spectrum comprises: 400 nm to 420 nm;
the second absorption spectrum includes: 480 nm to 600 nm.
Optionally, the first wavelength is 550nm, and the second wavelength is 420 nm.
Optionally, the power of the laser radiation is 0.1 watt to 10 watt, and the duration of the laser radiation is 1 second to 1000 seconds.
Alternatively, the power of the laser irradiation is 2 watts, and the duration of the laser irradiation is 60 seconds.
In a second aspect, the embodiment of the present invention provides a conductive film obtained by processing according to the method for optimizing a conductive trace of the first aspect.
The method for optimizing the etching mark and the conductive film provided by the embodiment of the invention mainly comprise the following steps: obtaining a conductive film to be optimized, wherein the conductive film comprises an inner layer conductive silver wire and an outer layer silver impurity; respectively determining a first absorption spectrum and a second absorption spectrum corresponding to the inner layer conductive silver wire and the outer layer silver impurities, wherein any first wavelength in the first absorption spectrum is larger than any second wavelength in the second absorption spectrum; and respectively irradiating the conductive film by using laser with a first wavelength and laser with a second wavelength to passivate the outer silver impurities of the conductive film, so that the haze of the conductive film is reduced, and the etching mark display effect of the conductive film is optimized. After the particles absorb the spectrum, surface plasma resonance occurs, so that oxidation occurs, and the reflection gloss is lost, namely passivation is achieved, and therefore haze is reduced, and etching marks are reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive exercise.
Fig. 1 is a schematic flow chart of an etching trace optimization method according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a schematic flow chart of an etching trace optimization method according to an embodiment of the present invention is provided. As shown in fig. 1, the method for optimizing the etching mark mainly comprises:
s101, obtaining a conductive film to be optimized, wherein the conductive film comprises an inner layer conductive silver wire and an outer layer silver impurity;
the method for optimizing the etching mark provided in this embodiment optimizes the display of the etching mark in a manner of reducing the haze on the surface of the conductive film. The haze reduction method can be various, and in the embodiment, the passivation of the surface of the conductive film is controlled according to different absorption degrees of the nano silver with different morphologies on the inner surface and the outer surface of the conductive film on the radiation laser, so that the haze reduction of the conductive film is realized.
First, haze is scattering/transmission. After the particles absorb the spectrum, the particles resonate with surface plasmas to be oxidized, and the reflection luster is lost, namely, the particles are passivated. The oxidized silver has weak reflection and scattering light, so that the haze can be reduced.
S102, respectively determining a first absorption spectrum and a second absorption spectrum corresponding to the inner-layer conductive silver wire and the outer-layer silver impurities, wherein any first wavelength in the first absorption spectrum is larger than any second wavelength in the second absorption spectrum;
and selecting laser in a corresponding wavelength range for radiation according to the absorption spectra of the nano silver in different shapes. For example, the absorption spectrum of the silver nanowire with the wire diameter of 15-35nm is 260-280 nm. In the impurity silver, the absorption spectrum of the nano silver particles below 50nm is near 420 nm; the nano silver particles with the diameter larger than 100nm and the nano silver short rods with the line length smaller than 5um and the diameter larger than 50nm have the absorption spectrum near 550 nm. The absorption spectrum of nano silver impurities (silver particles and short rods) is obviously different from that of nano silver wires, and the surface of the impurity particles is passivated by adopting light source radiation near the impurity absorption spectrum, so that the effect of reducing the haze is realized.
Finishing to obtain: the nano silver wire has the wire diameter of 11-40nm, the length of more than 8um and the absorption spectrum of 260-280 nm; impurity silver particles, namely nano silver small particles less than 50nm, with absorption wavelength of 420 nm; the nano-silver large particles are more than 50nm, and the absorption wavelength is between 480 and 600 nm; the impurity silver short rod has the wire diameter larger than 50nm, the length smaller than 5um and the absorption wavelength of 500-700 nm.
Optionally, the first absorption spectrum comprises: 400 nm to 420 nm;
the second absorption spectrum includes: 480 nm to 600 nm.
Specifically, the first wavelength may be 550 nanometers, and the second wavelength may be 420 nanometers.
S103, respectively using the laser with the first wavelength and the laser with the second wavelength to radiate the conductive film, so that the outer layer silver impurities of the conductive film are passivated, the haze of the conductive film is reduced, and the etching mark display effect of the conductive film is further optimized.
Optionally, the power of the laser radiation is 0.1 watt to 10 watt, and the duration of the laser radiation is 1 second to 1000 seconds.
Alternatively, the power of the laser irradiation is 2 watts, and the duration of the laser irradiation is 60 seconds.
The above method will be explained below with reference to a specific example.
1. Adopting nano silver wire ink with the wire diameter of about 25nm purified by an acetone purification route to prepare the nano silver wire conductive film, wherein the impurity content is 30 wt%;
2. the conductive film substrate is made of optical Polyethylene terephthalate (PET) with a hardened layer on the back, the optical parameters TT of the substrate are 91.5%, Haze is 1.0%, and b is 0.75;
3. after the nano silver wire conductive film is coated, TT is 90.3%, Haze is 3.2%, and b is 2.5; sheet resistance is 25 omega/sq;
4. after irradiation with 550nm laser (2W × 1min) and 420nm laser (2W × 1min), TT is 90.1%, Haze is 1.9%, b is 1.9, and sheet resistance is 25 Ω/sq.
Calculated, Δ TT ═ 0.2%; Δ Haze ═ 0.8%; Δ b ═ 0.6; Δ sheet resistance is 0 Ω/sq.
Because impurity particles with different shapes and particle sizes have different corresponding absorption wavelengths, the absorption wavelength of a large particle or a short rod is about 550nm, and the absorption wavelength of the particle is about 420 nm. In the present embodiment, laser radiation of 550nm and 420nm is preferred, that is, the laser radiation wavelength and the spectrum in the vicinity thereof are selected according to the absorption spectrum of the impurity, so that the absorption effect is optimal, and the optimization effect for the etching mark is also good. Of course, in other embodiments, laser radiation corresponding to only the outermost large particles of the impurity can be used to effect the same.
Therefore, the nano silver conductive film is subjected to selective optical radiation by utilizing the laser of the impurity silver absorption spectrum section, so that the micro surface reflectivity of the impurity silver is reduced, the haze after patterning is reduced, and the chromatic value is reduced. Meanwhile, the nano silver wire is not influenced, and the patterned sheet resistance is almost unchanged.
According to the method for optimizing the etching mark and the conductive film provided by the embodiment of the invention, the conductive film to be optimized is obtained firstly, wherein the conductive film comprises an inner layer conductive silver wire and an outer layer silver impurity; respectively determining a first absorption spectrum and a second absorption spectrum corresponding to the inner layer conductive silver wire and the outer layer silver impurities, wherein any first wavelength in the first absorption spectrum is larger than any second wavelength in the second absorption spectrum; and respectively irradiating the conductive film by using laser with a first wavelength and laser with a second wavelength to passivate the outer silver impurities of the conductive film, so that the haze of the conductive film is reduced, and the etching mark display effect of the conductive film is optimized. After the particles absorb the spectrum, surface plasma resonance occurs, so that oxidation occurs, and the reflection gloss is lost, namely passivation is achieved, and therefore haze is reduced, and etching marks are reduced. Meanwhile, the method has the advantages of simple process, high efficiency and low cost.
Corresponding to the embodiment, the embodiment of the present invention further provides a conductive film, which is obtained by processing the conductive trace according to the optimization method of the conductive trace provided in the embodiment shown in fig. 1.
For details of the implementation of the conductive film provided in the embodiment of the present invention, reference may be made to the specific implementation process of the etching trace optimization method provided in the embodiment shown in fig. 1, and details are not repeated here.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (6)
1. A method for optimizing an etching mark, comprising:
obtaining a conductive film to be optimized, wherein the conductive film comprises an inner layer conductive silver wire and an outer layer silver impurity;
respectively determining a first absorption spectrum and a second absorption spectrum corresponding to the inner layer conductive silver wire and the outer layer silver impurities, wherein any first wavelength in the first absorption spectrum is larger than any second wavelength in the second absorption spectrum;
and respectively irradiating the conductive film by using the laser with the first wavelength and the laser with the second wavelength to passivate the outer silver impurities of the conductive film, so that the haze of the conductive film is reduced, and the etching mark display effect of the conductive film is optimized.
2. The method of claim 1, wherein the first absorption spectrum comprises: 400 nm to 420 nm;
the second absorption spectrum includes: 480 nm to 600 nm.
3. The method of claim 2, wherein the first wavelength is 550nm and the second wavelength is 420 nm.
4. A method according to any of claims 1 to 3, characterized in that the power of the laser radiation is 0.1 to 10 watts and the duration of the laser radiation is 1 to 1000 seconds.
5. The method according to claim 4, wherein the laser radiation has a power of 2 watts and a duration of 60 seconds.
6. A conductive film obtained by the method for optimizing etching traces according to any one of claims 1 to 5.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120261072A1 (en) * | 2011-04-12 | 2012-10-18 | Topcell Solar International Co.,Ltd | Apparatus for reducing etching marks on solar cell surface |
| CN103258596A (en) * | 2013-04-27 | 2013-08-21 | 苏州诺菲纳米科技有限公司 | Shadow removing method of conductive thin film |
| TW201601172A (en) * | 2014-06-11 | 2016-01-01 | 保健潮流健康公司 | Method of producing a revealable invisible pattern in a transparent conductive film |
| CN108399977A (en) * | 2018-02-27 | 2018-08-14 | 合肥微晶材料科技有限公司 | A method of so that nano-silver thread transparent conductive film is had the function of the shadow that disappears |
| CN110629222A (en) * | 2019-10-30 | 2019-12-31 | 合肥微晶材料科技有限公司 | Etching method of nano silver wire transparent conductive film with shadow eliminating function |
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- 2020-09-24 CN CN202011016910.0A patent/CN112309634B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120261072A1 (en) * | 2011-04-12 | 2012-10-18 | Topcell Solar International Co.,Ltd | Apparatus for reducing etching marks on solar cell surface |
| CN103258596A (en) * | 2013-04-27 | 2013-08-21 | 苏州诺菲纳米科技有限公司 | Shadow removing method of conductive thin film |
| TW201601172A (en) * | 2014-06-11 | 2016-01-01 | 保健潮流健康公司 | Method of producing a revealable invisible pattern in a transparent conductive film |
| CN108399977A (en) * | 2018-02-27 | 2018-08-14 | 合肥微晶材料科技有限公司 | A method of so that nano-silver thread transparent conductive film is had the function of the shadow that disappears |
| CN110629222A (en) * | 2019-10-30 | 2019-12-31 | 合肥微晶材料科技有限公司 | Etching method of nano silver wire transparent conductive film with shadow eliminating function |
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