CN112305631B - Wafer state detection device and detection method thereof - Google Patents
Wafer state detection device and detection method thereof Download PDFInfo
- Publication number
- CN112305631B CN112305631B CN202011203131.1A CN202011203131A CN112305631B CN 112305631 B CN112305631 B CN 112305631B CN 202011203131 A CN202011203131 A CN 202011203131A CN 112305631 B CN112305631 B CN 112305631B
- Authority
- CN
- China
- Prior art keywords
- wafer
- receiving sensor
- laser receiving
- height
- shielding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/10—Detecting, e.g. by using light barriers
- G01V8/20—Detecting, e.g. by using light barriers using multiple transmitters or receivers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0608—Height gauges
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geophysics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a wafer state detection device and a detection method thereof, relating to the technical field of semiconductors, wherein the device comprises a light path lifting module, a lifting outer cover, a fixed inner cover arranged in the lifting outer cover, a cylinder arranged in the fixed inner cover and a light blocking ruler; the first side of the lifting outer cover is connected with one side of the light path lifting module, first light transmission holes are formed in the connected sides, a first laser receiving sensor is arranged on the second side of the lifting outer cover, first light transmission grooves are formed in the opposite side of the fixed inner cover, the light blocking ruler is placed between the first light transmission grooves, and comb tooth grooves which are distributed the same as the groove of the wafer boat are formed in the light blocking ruler; laser output by the light path lifting module sequentially passes through the first light transmission hole, the first light transmission groove and the comb tooth groove and is emitted to the first laser receiving sensor; the piston rod of cylinder is connected to the top of lift dustcoat through the telescopic hole, drives lift dustcoat and light path lift module synchronous motion, and the device detects for non-invasive, has promoted efficiency and the precision that wafer state detected.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a wafer state detection device and a wafer state detection method.
Background
In a semiconductor manufacturing process, a wafer cassette is a wafer cassette for placing and transporting wafers, and each of the slots can be used for placing a wafer. For the same size wafer, the size of the corresponding wafer boat meets the corresponding standard. Before the semiconductor equipment transmits the wafers, the wafer placing state in the wafer boat needs to be detected, and the wafer information of each slot position, including missing position, in-place position, lamination, cross slot and the like, is obtained, so that the mechanical arm is controlled to automatically grab the wafers.
The existing method for detecting the state of the wafer by the equipment is mainly divided into a correlation type and a reflection type according to different sensors. The correlation detection is realized by using a correlation laser to extend the transmitting end and the receiving end into the wafer box, and then the sensor is controlled to move downwards to sequentially acquire the wafer placement state information, as shown in fig. 1. The method needs to control the front and back action and the up and down action of the sensor, has a complex structure, and is invaded into a wafer boat, when a little of wafer moves outwards, the wafer collides with the wafer, so that the position of the sensor is changed, even the wafer is fractured, and the problem of missing detection exists for the wafer with the cut edge. The reflective detection adopts an integrated assembly of multipath reflected laser, the integrated assembly is arranged on a mechanical arm, and the reflected signal is read by controlling the mechanical arm to move up and down and left and right, so that the state of the wafer is obtained. The method solves the problem that reflected light on the surface of the wafer is influenced by an incident angle, the edge appearance of the wafer, the material of the wafer and the like, has high requirements on a reflection integrated assembly, causes the price of a sensor to be high, has a detection mode influenced by a notch and an edge of the wafer, has low detection speed, and cannot be used for a machine with an over-short arm or an unsupported function.
As the semiconductor industry develops, the wafer materials begin to diversify, due to cost control and technical limitations, wafers made of new materials are often small in size, such as 6 inches, 4 inches, and the like, and a wafer state detection mechanism in the existing equipment is designed for a specific applicable object, so that application difficulty exists. Therefore, it is an urgent need in the field of semiconductor devices to provide a novel wafer state detection apparatus.
Disclosure of Invention
The present inventors have proposed a wafer state detection apparatus and a wafer state detection method for solving the above-mentioned problems and technical requirements, and the technical solution of the present invention is as follows:
a wafer state detection device comprises a light path lifting module, a lifting outer cover, a microprocessor, a fixed inner cover arranged in the lifting outer cover, a cylinder arranged in the fixed inner cover and a light blocking ruler; the first side of the lifting outer cover is connected with one side of the light path lifting module, first light transmission holes are formed in the connected sides, a first laser receiving sensor is arranged on the second side of the lifting outer cover, the microprocessor is connected with the first laser receiving sensor and the light path lifting module, first light transmission grooves are formed in the opposite sides of the fixed inner cover, the light blocking ruler is placed between the first light transmission grooves, comb tooth grooves which are distributed in the same way as the groove of the wafer boat are formed in the light blocking ruler, and the light blocking ruler is used for providing height information of the detected wafer; the light path lifting module provides a laser transmission light path, and laser output by the light path lifting module vertically penetrates into the first laser receiving sensor through the first light hole, the first light groove and the comb tooth groove in sequence; the telescopic hole has been seted up at fixed inner cover top, and the piston rod of cylinder is connected to the top of lift dustcoat through the telescopic hole to drive lift dustcoat and light path lift module and reciprocate in step, remove in-process first light trap and first laser receiving sensor and be located same water flat line all the time.
The light path lifting module comprises a hollow lifting frame, a first beam splitter, a second beam splitter, four second light holes, a laser transmitter, a second laser receiving sensor and a third laser receiving sensor, wherein the first beam splitter, the second beam splitter, the four second light holes, the laser transmitter, the second laser receiving sensor and the third laser receiving sensor are arranged in the lifting frame; the first beam splitter and the second beam splitter are arranged on the first side of the lifting frame opposite to the second laser receiving sensor and the third laser receiving sensor, the second light holes I and the second light holes III are in a group, the second light holes II and the second light holes IV are in a group, the two groups of second light holes are arranged on the second side of the lifting frame opposite to each other, the second side of the lifting frame is positioned on the inner side of the first side of the lifting frame, the inner side of the second side of the lifting frame is enclosed to form an inner hollow area, the laser emitter is arranged on the first side of the lifting frame opposite to the first light holes and is arranged in a flush mode, and the first beam splitter and the second beam splitter are arranged between the laser emitter and the first light holes;
the crystal boat is placed in the inner hollow area, the opening faces the beam splitter, a laser beam emitted by the laser emitter is split into a first laser beam I and a first laser beam II through the first beam splitter, the first laser beam II sequentially passes through the second light hole I, the crystal boat and the second light hole II and is incident to the second laser receiving sensor, the first laser beam I is split into the second laser beam I and the second laser beam II through the second beam splitter, the second laser beam II sequentially passes through the second light hole III, the crystal boat and the second light hole IV and is incident to the third laser receiving sensor, and the second laser beam I is incident to the first laser receiving sensor.
A wafer state detection method is suitable for the wafer state detection device, and comprises the following steps:
the cylinder drives the light path lifting module and the lifting outer cover to move upwards;
acquiring level change waveforms and level change moments detected by three laser receiving sensors, knowing the light transmission intervals of the comb tooth grooves, and establishing the corresponding relation among the level change moments of the first laser receiving sensor, the height of a light blocking ruler and the number of the crystal boat groove;
fitting the time-height polynomial and fitting its residuals according to the correspondence:
the time-height polynomial is:
in the formula, a0、a1、a2、…、amIs a constant, m is a power of a polynomial,
detecting the height of the wafer;
the height residual is:
wherein i is the serial number of the level change time point of the first laser receiving sensor, hiIs tiThe actual height corresponding to the moment is determined by the light blocking ruler;
when the fitting height residual error meets the following relation, the fitting result of the time-height polynomial meets the precision requirement of the wafer placement state detection: srEpsilon is not more than epsilon, wherein epsilon is a given value and is set according to the actual precision requirement;
integrating the wafer shielding information detected by the second laser receiving sensor and the third laser receiving sensor to obtain a wafer integration signal;
calculating to obtain the wafer shielding thickness of each slot of the wafer boat according to the time-height polynomial and the wafer integration signal;
and comparing the wafer shielding thickness with the reference wafer thickness by a threshold judgment method to obtain the wafer placing state in each slot of the wafer boat.
The technical scheme is that the wafer shielding information detected by the second laser receiving sensor and the third laser receiving sensor is integrated to obtain a wafer integration signal, and the method comprises the following steps:
setting a first laser receiving sensor to detect that a signal in a light transmission area of a comb tooth groove is at a high level and a signal in a shading area is at a low level, and setting a second laser receiving sensor and a third laser receiving sensor to detect that a wafer shading signal is at a high level and is at a low level when the wafer shading signal is not shaded;
time integration is carried out on the parts with inconsistent level changes of the wafer shielding information to obtain a wafer integration signal, for the parts with inconsistent level changes, the earliest time point of a level rising edge is used as the starting time of the wafer shielding in the wafer integration signal, and the latest time point of a level falling edge is used as the ending time of the wafer shielding in the wafer integration signal;
then the wafer shielding thickness of each slot of the wafer boat is obtained as follows:
wherein j is the slot number of the wafer boat,
the height of the wafer shielding starting moment is calculated by a time-height polynomial,
the height of the wafer shielding end moment is calculated by a time-height polynomial.
The further technical scheme is that the wafer shielding thickness is compared with the wafer reference thickness through a threshold value judging method to obtain the wafer placing state in each slot of the wafer boat, and the method comprises the following steps:
if the wafer shielding thickness meets the following requirements: alpha. deltao<δj≤β·δoAnd the high level time of the wafer integration signal is in the high level time range of the first laser receiving sensor at the same level change moment, wherein alpha and beta are upper and lower threshold proportionality coefficients, and deltaoIf the wafer reference thickness is the wafer reference thickness, the detected wafer in the wafer boat slot position is in an in-place state;
if the wafer shielding thickness meets the following requirements: deltaj＞β·δoWhen the high level time of the wafer integration signal is within the high level time range of the first laser receiving sensor at the same level change moment, the detection wafers in the wafer boat slots are in a laminated state;
if the wafer shielding thickness meets the following requirements: alpha. deltao<δjIf the high level time of the wafer integration signal is coincident with the low level time of the first laser receiving sensor, the detected wafer in the slot position of the wafer boat is in a slot crossing state;
otherwise, it is determined that there is no wafer in the slot of the wafer boat.
According to a further technical scheme, after the step of fitting the time-height polynomial and fitting the residual error of the time-height polynomial according to the corresponding relation, the detection method further comprises the following steps of:
respectively substituting the level change moments of the wafer shielding signals detected by the second laser receiving sensor and the third laser receiving sensor into a time-height polynomial to obtain the wafer height corresponding to the level change moment, and calculating the wafer shielding thickness of each slot of the wafer boat according to the wafer height to obtain:
in the formula, r is the serial number of the laser receiving sensor, the second laser receiving sensor corresponds to r being 2, and the third laser receiving sensor corresponds to r being 3; j is the number of the slot position,
for t calculated by a time-height polynomialrj1Wafer height at time trj1For the moment corresponding to the rising edge of the wafer shielding signal level detected by the laser receiving sensor r,
for t calculated by a time-height polynomialrj2Wafer height at time trj2The time corresponding to the wafer shielding signal level falling edge detected by the laser receiving sensor r;
extracting the shielding thickness of each wafer to satisfy the following conditions:
(α·δo<δ2j≤β·δo) And (alpha. deltao<δ3j≤β·δo) The slot position number corresponding to the wafer shielding thickness of the condition is used as a judgment slot position and is recorded in a sequence z;
in sequence z, calculating the average value of the height deviation of the second laser receiving sensor and the third laser receiving sensor according to the wafer heights recorded by the two sensors as follows:
wherein k is equal to z, nzIs the number of elements in the sequence z;
for the starting height of the k slot position wafer corresponding to the rising edge of the wafer shielding signal level detected by the third laser receiving sensor,
for the starting height of the k slot position wafer corresponding to the rising edge of the wafer shielding signal level detected by the second laser receiving sensor,
for the wafer end height of k slot position corresponding to the wafer shielding signal level falling edge detected by the third laser receiving sensor,
the wafer end height of the k slot position corresponding to the wafer shielding signal level falling edge detected by the second laser receiving sensor is obtained;
the wafer height corresponding to the level change moment of the wafer shielding signals detected by the second laser receiving sensor and the third laser receiving sensor is subjected to deviation correction through the height deviation average value,
in the formula (I), the compound is shown in the specification,
fitting height of slot number j in wafer shielding signal detected by second laser receiving sensor, including wafer starting height
And end of wafer height
The corrected height of the slot number j in the wafer shielding signal detected by the second laser receiving sensor comprises the corrected height of the wafer
And end of wafer correction height
Fitting height of slot number j in wafer shielding signal detected by third laser receiving sensor, including wafer starting height
And end of wafer height
The corrected height of the slot number j in the wafer shielding signal detected by the third laser receiving sensor comprises the corrected height of the wafer
And end of wafer correction height
The technical scheme is that the wafer shielding information detected by the second laser receiving sensor and the third laser receiving sensor is integrated to obtain a wafer integration signal, and the method comprises the following steps:
carrying out height integration on correction heights corresponding to the wafer shielding signals detected by the second laser receiving sensor and the third laser receiving sensor to obtain an integrated correction height of a wafer integration signal, comparing the wafer starting correction heights of the two laser receiving sensors of each slot position, taking a smaller value as the integrated correction height of the wafer shielding starting moment, comparing the wafer finishing correction heights of the two laser receiving sensors of each slot position, and taking a larger value as the integrated correction height of the wafer shielding finishing moment;
then the wafer shielding thickness of each slot of the wafer boat is obtained as follows:
in the formula (I), the compound is shown in the specification,
in order to correct the wafer mask thickness,
the height is corrected for the integration of the wafer shielding start time,
and correcting the height for the integration of the wafer shielding end time.
The further technical scheme is that the wafer shielding thickness is compared with the wafer reference thickness through a threshold value judging method to obtain the wafer placing state in each slot of the wafer boat, and the method comprises the following steps:
if the wafer shielding thickness meets the following requirements:
and is
In the formula, alpha and beta are upper and lower threshold proportionality coefficients, deltaoFor the wafer reference thickness, Δ d1If the light transmission distance of the comb tooth groove is equal, the detection wafer in the wafer boat groove position is in an in-place state;
if the wafer shielding thickness meets the following requirements:
and is
Then the detected wafers in the slot position of the wafer boat are in a lamination state;
if the wafer shielding thickness meets the following requirements: alpha. deltao<δjAnd is and
then the detected wafer in the slot position of the wafer boat is in a cross-slot state;
otherwise, it is determined that there is no wafer in the slot of the wafer boat.
According to a further technical scheme, after the step of calculating the average value of the height deviation of the second laser receiving sensor and the third laser receiving sensor according to the height of the wafer recorded by the second laser receiving sensor and the third laser receiving sensor, the detection method further comprises the following steps:
by passing
Rechecking each slot position in the sequence z, wherein gamma is a limiting proportion factor and delta0To limit the cardinality, the sequence z is guaranteed to be stable through the limited circulation convergence;
if each slot k in the sequence z meets the re-inspection condition, a step of performing deviation correction on the wafer height corresponding to the level change moment of the wafer shielding signals detected by the second laser receiving sensor and the third laser receiving sensor through the height deviation average value is performed, otherwise, a non-conforming slot number is removed from the sequence z, and a step of calculating the height deviation average value of the second laser receiving sensor and the third laser receiving sensor according to the wafer heights recorded by the second laser receiving sensor and the third laser receiving sensor is performed again.
According to a further technical scheme, after the step of obtaining the wafer placing state in each slot of the wafer boat, the detection method further comprises the following steps:
the wafer placing state is transmitted to operation equipment, after a mechanical arm in the operation equipment takes away an in-place state wafer for operation, the wafer is placed back to the original position, the air cylinder drives the light path lifting module and the lifting outer cover to move downwards, the steps of obtaining the level change detected by the three laser receiving sensors and the time point of the level change are executed again, the wafer placing state obtained at this time and the wafer placing state before transmission are checked, if the wafer placing states before and after transmission are inconsistent, the wafer is still remained in the operation equipment or drops in the transmission process, and the wafer state detection device gives an alarm prompt.
The beneficial technical effects of the invention are as follows:
the wafer state detection device is simple in structure and convenient to install, the light path lifting module is installed on the periphery of the wafer boat, non-invasive detection is adopted, the distance between the lifting frame and the wafer is far in the up-and-down moving process of the lifting frame, collision cannot occur, the efficiency and the precision of wafer state detection are improved, the wafer boat does not need to be moved, and the wafer is prevented from sliding out due to vibration; the detection device is matched with two detection methods, one method aims at the level change time of the wafer shielding information acquired by the laser receiving sensor, the detection method requires high requirements on the installation accuracy of a laser light path and a light shielding ruler, the laser light path plane is parallel to the wafer plane as much as possible, the other method aims at correcting the wafer height corresponding to the level change time of the wafer shielding information acquired by the laser receiving sensor, large installation errors can be allowed, the installation difficulty is reduced, and finally the calculated wafer shielding thickness and the wafer reference thickness are compared through a threshold value judgment method to obtain the wafer placing state in each groove position of the wafer boat.
Drawings
FIG. 1 is a schematic diagram of a conventional correlation detection method applied to a wafer boat.
Fig. 2 is a top view of the wafer condition detecting apparatus provided in the present application.
Fig. 3 is a side view of a wafer condition detecting apparatus provided in the present application.
Fig. 4 is a schematic diagram illustrating a moving process of the wafer state detection apparatus provided in the present application.
Fig. 5 is an optical path diagram of the optical path lifting module provided in the present application.
Fig. 6 is an optical path diagram of an optical path lifting module with another view angle provided in the present application.
Fig. 7 is a structural view of a comb tooth groove in the light-blocking ruler provided by the application.
Fig. 8 is a schematic diagram of a wafer placed in a groove of a wafer boat according to the present application.
Fig. 9 is a flowchart of a wafer state detection method according to an embodiment of the present application.
Fig. 10 shows level variation waveforms detected by three laser receiving sensors and a level variation waveform of a wafer integration signal according to an embodiment of the present application.
Fig. 11 is a waveform of level variation detected by three laser receiving sensors when the optical path plane and the wafer plane have a large included angle according to an embodiment of the present application.
Fig. 12 is a flowchart of a wafer state detection method according to another embodiment of the present application.
Detailed Description
The following further describes the embodiments of the present invention with reference to the drawings.
The application discloses wafer state detection device, it is shown in combination with fig. 2-4, including light path lift module, lift dustcoat 2, microprocessor (not shown in the figure), arrange fixed inner cover 3 of lift dustcoat 2 inside and arrange cylinder 4, the chi 5 that is in the light in fixed inner cover 3 in.
The optical path lifting module comprises a lifting frame 1 with a hollow interior, a first beam splitter S1, a second beam splitter S2, four second light holes, a laser emitter E1 connected with the microprocessor, a second laser receiving sensor R2 and a third laser receiving sensor R3, wherein the first beam splitter S1, the second beam splitter S2, the four second light holes, the second laser receiving sensor R2 and the third laser receiving sensor R3 are arranged in the lifting frame 1. The first beam splitter S1 and the second beam splitter S2 are arranged on the first side of the lifting frame 1 relatively to the second laser receiving sensor R2 and the third laser receiving sensor R3, the second light hole I K11 and the second light hole III K13 are in a group, the second light hole II K12 and the second light hole IV K14 are in a group, two groups of second light holes are arranged on the second side of the lifting frame 1 relatively, the second side of the lifting frame 1 is located on the inner side of the first side of the lifting frame 1, the inner side of the second side of the lifting frame 1 is enclosed into an inner hollow area, the laser emitter E1 is arranged on the first side of the lifting frame 1 opposite to the first light hole K1 and is arranged in a flush mode, and the first beam splitter S1 and the second beam splitter S2 are arranged between the laser emitter E1 and the first light hole K1. The first beam splitter S1, the second beam splitter S2, the second laser receiving sensor R2 and the third laser receiving sensor R3 are arranged close to two sides of the lifting frame as much as possible on the premise that the laser is not blocked by the crystal boat 6, so that the detection area is enlarged, when the wafer has a cross-groove condition, the blocking time of the wafer on the laser beam is longer, the width of the generated level waveform is wider, and the characteristics are easier to identify.
Referring to fig. 5 and 6, the boat 6 is placed in the hollow area with the opening facing the beam splitter, the laser beam ES1 emitted from the laser emitter E1 is split into a first laser beam i ES11 and a first laser beam ii ES12 by the first beam splitter S1, the first laser beam ii ES12 passes through the second light transmission hole i K11, the boat 6 and the second light transmission hole ii K12 in sequence and enters the second laser receiving sensor R2, the first laser beam i ES11 passes through the second beam splitter S2 and is split into a second laser beam i ES21 and a second laser beam ii ES22, the second laser beam ii ES22 passes through the second light transmission hole iii K13, the boat 6 and the second light transmission hole iv K14 and enters the third laser receiving sensor R3, and the second laser beam i ES21 enters the first laser receiving sensor R1.
The first side of lift dustcoat 2 links to each other with one side of light path lift module, and links to each other and all seted up first light trap K1 on the side, is equipped with first laser receiving sensor R1 on the second side of lift dustcoat 2, and the first side and the second side of lift dustcoat 2 are relative, and microprocessor links to each other with first laser receiving sensor R1 and light path lift module for it shelters from the signal to handle the wafer. Phase of fixed inner cover 3First light transmission grooves K3 are formed in the opposite side, the light blocking ruler 5 is placed between the first light transmission grooves K3, and comb tooth grooves which are distributed in the same manner as the boat grooves are formed in the light blocking ruler 5, as shown in fig. 7, each comb tooth groove comprises a light transmission groove 501 and a light shielding structure 502, and Δ d is equal to Δ d1+Δd2In the formula, Δ d1Is a light-transmitting interval, Δ d, of the light-transmitting groove 5012For the light shielding interval of the light shielding structure 502, the light shielding ruler 5 is used for providing the height information and the slot position of the detected wafer in cooperation with the first laser receiving sensor R1. The light path lift module provides the laser transmission light path, and the laser of light path lift module output loops through first light trap K1, first light trap K3, broach groove and jets into perpendicularly to first laser receiving sensor R1. The telescopic hole has been seted up at fixed inner cover 3 top, and the piston rod 41 of cylinder 4 is connected to the top of lift dustcoat 2 through the telescopic hole to drive lift dustcoat 2 and the synchronous reciprocating motion of light path lift module, remove in-process first light trap K1 and first laser receiving sensor R1 and be located same water flat line all the time.
Optionally, the laser transmitter E1 is implemented based on an FU-59 model produced by yangshi, the laser receiving sensor is implemented based on an FU-18 model produced by yangshi, the beam splitter is implemented based on H-K9 optical glass, the ratio of the reflectivity to the transmissivity of the first beam splitter S1 is 2:3, and the ratio of the reflectivity to the transmissivity of the second beam splitter S2 is 2: 1.
Fig. 8 is a schematic diagram illustrating a possible state of a wafer placed in a groove of a wafer boat, and the present application further discloses a wafer state detection method, which is suitable for the wafer state detection apparatus, and a flowchart of the detection method according to an embodiment is shown in fig. 9, and includes the following steps:
the first embodiment is as follows:
step b 1: the cylinder 4 drives the light path lifting module and the lifting outer cover 2 to move upwards.
Step b 2: acquiring level change waveforms and level change moments detected by three laser receiving sensors, and knowing the light transmission intervals of comb tooth grooves, so that each level change moment tiCorresponding height hiIs a fixed known value. Establishing the level change time and light blocking ruler of the first laser receiving sensor R15 the corresponding relation between the height and the slot number of the wafer boat.
The timing of the level change starts from the reading of the light transmission region detection signal of the light-blocking ruler 5 by the first laser reception sensor R1 until the level change is out of the height range of the light-blocking ruler 5.
Step b 3: fitting the time-height polynomial and fitting its residuals according to the correspondence:
the time-height polynomial is:
in the formula, a0、a1、a2、…、amIs a constant, m is a power of a polynomial,
to detect the height of the wafer.
Optionally, according to the speed change characteristics of acceleration, basic uniform speed and deceleration in the operation process of the cylinder, the fitting method may also be implemented in a piecewise fitting manner, for example: the power at the time of uniform velocity is set to m 1, and the power at the time of acceleration or deceleration is set to m 2, whereby the power of the polynomial is reduced and the calculation speed is increased while ensuring the accuracy.
The height residual is:
where i is the number of time points at which the level of the first laser beam receiving sensor R1 changes, and hiIs tiThe actual height corresponding to the moment is determined by the light blocking ruler 5.
When the fitting height residual error meets the following relation, the fitting result of the time-height polynomial meets the precision requirement of the wafer placement state detection: srAnd E is not more than the given value and is set according to the actual precision requirement.
Step b 4: and integrating the wafer shielding information detected by the second laser receiving sensor R2 and the third laser receiving sensor R3 to obtain a wafer integration signal.
When a wafer exists in the slot, the laser beams ES12 and ES22 are necessarily shielded, so that the second laser receiving sensor R2 and the third laser receiving sensor R3 detect two signals (high/low level) for one wafer, and because the light paths are different, the detection positions of the second laser receiving sensor R2 and the third laser receiving sensor R3 are not completely the same, and the two signals are integrated, which is helpful for extracting shielding information of a larger area of the wafer.
As shown in fig. 10, the first laser light receiving sensor R1 is set such that the comb-teeth-groove light-transmitting-region detection signal is at a high level and the light-shielded-region detection signal is at a low level, and the second laser light receiving sensor R2 and the third laser light receiving sensor R3 are set such that the wafer-shielded signal is at a high level and at a low level when there is no shielding. Time integration is carried out on the parts with inconsistent level change of the wafer shielding information to obtain a wafer integration signal M, and for the parts with inconsistent level change, the earliest time point of the level rising edge is taken as the starting time t of the wafer shielding in the wafer integration signalj1Taking the latest time point of the level falling edge as the end time t of the wafer shielding in the wafer integration signalj2。
Step b 5: and calculating the wafer shielding thickness of each slot of the wafer boat according to the time-height polynomial and the wafer integration signal.
Wherein j is the slot number of the wafer boat,
for the wafer shielding starting moment t calculated by a time-height polynomialj1The height of (a) of (b),
for the wafer shielding end time t obtained by the calculation of a time-height polynomialj2Of (c) is measured.
Step b 6: and comparing the wafer shielding thickness with the reference wafer thickness by a threshold judgment method to obtain the wafer placing state in each slot of the wafer boat.
If the wafer shielding thickness meets the following requirements: alpha. deltao<δj≤β·δoAnd the high level time of the wafer integration signal is within the high level time range of the first laser receiving sensor R1 at the same level change time, where α and β are upper and lower threshold proportionality coefficients, and in this embodiment, α is 0.6, β is 1.4, and δ is taken asoIf the wafer reference thickness is obtained, the detected wafer in the wafer boat slot is in the on-position state.
If the wafer shielding thickness meets the following requirements: deltaj＞β·δoAnd the high level time of the wafer integration signal at the same level change time is within the high level time range of the first laser receiving sensor R1, the detected wafers in the wafer cassette slot are in the laminated state.
If the wafer shielding thickness meets the following requirements: alpha. deltao<δjAnd the high level time of the wafer integration signal coincides with the low level time of the first laser receiving sensor R1, the detected wafer in the wafer cassette slot is in a cross-slot state.
Otherwise, it is determined that there is no wafer in the slot of the wafer boat.
Optionally, after the step of obtaining the wafer placement states in the slots of the boat, the detection method further includes:
step b 7: the wafer placing state is transmitted to operation equipment, after a mechanical arm in the operation equipment takes away an in-place state wafer for operation, the wafer is placed back to the original position, the air cylinder 4 drives the light path lifting module and the lifting outer cover 2 to move downwards, the steps of obtaining the level change detected by the three laser receiving sensors and the time point of the level change are executed again, the wafer placing state obtained at this time and the wafer placing state before transmission are checked, if the wafer placing states before and after transmission are inconsistent, the wafer is still remained in the operation equipment or drops in the transmission process, and the wafer state detection device gives an alarm prompt.
In the first embodiment, by setting the reference thickness of a given wafer and installing the light-blocking ruler 5 in accordance with the actual number and spacing of the grooves of the wafer boat 6, the state detection support for wafers of various specifications such as different sizes (e.g., 3 inches, 4 inches, 6 inches, 8 inches, etc.), different thicknesses (e.g., ultrathin sheets, standard sheets, thickened sheets, etc.), different crystal orientation marks (notches, trimming, etc.) and the like is realized, and the wafer state detection support is simple in structure and easy to install and transplant.
The operation complexity of the steps b4-b6 in the method is low, but the requirements on the installation accuracy of the laser optical path and the light blocking ruler 5 are high, the laser optical path plane and the wafer plane should be parallel as much as possible, and the debugging result is that the trigger time (level rising edge) of the wafer shielding signal in the in-place state should be located at the beginning part of the light transmission time of the corresponding change time (namely, the corresponding slot position) of the first laser receiving sensor R1, otherwise, the judgment result may be wrong. For example, if the light-blocking ruler 5 is too low, the wafer-blocking signal at the time of lamination appears outside the signal corresponding to the slot position (at a low level), resulting in a determination of a cross-slot. For another example, when there is a large included angle between the optical path plane and the wafer plane, the time for the same wafer to shield the wafer signals of the second laser receiving sensor R2 and the third laser receiving sensor R3 has a large deviation, and after the time integration is performed according to the step b4, the wafer in the on-position state is determined as a laminated wafer, as shown in fig. 11.
Therefore, the second embodiment provides another wafer condition detection method based on height correction, the flow chart of which is shown in fig. 12, and the detection method includes the following steps:
example two:
step c 1: the cylinder 4 drives the light path lifting module and the lifting outer cover 2 to move upwards.
Step c 2: and acquiring level change waveforms and level change moments detected by the three laser receiving sensors, knowing the light transmission intervals of the comb tooth grooves, and establishing the corresponding relation among the level change moments of the first laser receiving sensor R1, the height of the light blocking ruler 5 and the boat slot numbers.
Step c 3: and fitting a time-height polynomial according to the corresponding relation and fitting the residual error of the time-height polynomial.
This step is the same as step b3, and will not be described herein.
Step c 4: the level change moments of the wafer shielding signals detected by the second laser receiving sensor R2 and the third laser receiving sensor R3 are respectively substituted into a time-height polynomial to obtain the wafer height corresponding to the level change moments, and the wafer shielding thickness of each slot of the wafer boat is calculated according to the wafer height:
in the formula, R is a laser receiving sensor serial number, the second laser receiving sensor R2 corresponds to R being 2, and the third laser receiving sensor R3 corresponds to R being 3; j is the number of the slot position,
for t calculated by a time-height polynomialrj1Wafer height at time trj1For the moment corresponding to the rising edge of the wafer shielding signal level detected by the laser receiving sensor r,
for t calculated by a time-height polynomialrj2Wafer height at time trj2And the time corresponding to the wafer shielding signal level falling edge detected by the laser receiving sensor r.
Step c 5: extracting the shielding thickness of each wafer to satisfy the following conditions:
(α·δo<δ2j≤β·δo) And (alpha. deltao<δ3j≤β·δo) And taking the slot position number corresponding to the wafer shielding thickness of the condition as a judgment slot position, and recording the judgment slot position in the sequence z. In other words, at the same slot, the wafer shielding thickness detected by the second laser receiving sensor R2 and the third laser receiving sensor R3 is the thickness value of the wafer in normal position.
Step c 6: in sequence z, the average value of the height deviations calculated from the wafer heights recorded by the second and third laser receiving sensors R2 and R3 is:
wherein k is equal to z, nzIs the number of elements in the sequence z;
for the wafer start height of k slot corresponding to the rising edge of the wafer shielding signal level detected by the third laser receiving sensor R3,
for the wafer start height of k slot corresponding to the rising edge of the wafer shielding signal level detected by the second laser receiving sensor R2,
for the wafer end height of k slot position corresponding to the wafer shielding signal level falling edge detected by the third laser receiving sensor R3,
and the wafer end height of the k slot position corresponding to the level falling edge of the wafer shielding signal detected by the second laser receiving sensor R2. By the above equation, the average detection deviation of the second laser light receiving sensor R2 and the third laser light receiving sensor R3 with respect to the wafer plane can be calculated.
Step c 7: by passing
Rechecking each slot position in the sequence z, wherein gamma is a factor for limiting the proportion and is set according to actual needs; delta0To limit the cardinality, the sequence z is guaranteed to converge stably over a limited number of cycles.
If each slot k in the sequence z meets the re-inspection condition, the step of performing deviation correction on the wafer height corresponding to the level change moment of the wafer shielding signal detected by the second laser receiving sensor R2 and the third laser receiving sensor R3 through the height deviation average value is carried out, otherwise, the step of removing the slot number which is not in accordance with the sequence z and calculating the height deviation average value of the second laser receiving sensor R2 and the third laser receiving sensor R3 according to the wafer height recorded by the second laser receiving sensor R2 and the third laser receiving sensor R3 is carried out again, namely the stepc6. Gamma and delta0The larger the value is, the easier the retest is to pass, the less the number of cycles is required for stabilizing the sequence z, but the excessive gamma may miss the slot position in an abnormal state, and the deviation calculation accuracy is affected. In the actual parameter setting, the ideal effect can be achieved by one to two times of rechecking generally.
Step c 8: the wafer heights corresponding to the level change moments of the wafer shielding signals detected by the second laser receiving sensor R2 and the third laser receiving sensor R3 are subjected to deviation correction through the height deviation average value,
in the formula (I), the compound is shown in the specification,
fitting height of slot number j in the wafer shielding signal detected by the second laser receiving sensor R2, including the wafer starting height
And end of wafer height
The corrected height of the slot number j in the wafer shielding signal detected by the second laser receiving sensor R2 includes the corrected height of the wafer
And end of wafer correction height
Fitting height of slot number j in the wafer shielding signal detected by the third laser receiving sensor R3, including the wafer starting height
And end of wafer height
The corrected height of the slot number j in the wafer shielding signal detected by the third laser receiving sensor R3 includes the corrected height of the wafer
And end of wafer correction height
Step c 9: and integrating the wafer shielding information detected by the second laser receiving sensor R2 and the third laser receiving sensor R3 to obtain a wafer integration signal.
Highly integrating the correction heights corresponding to the wafer shielding signals detected by the second laser receiving sensor R2 and the third laser receiving sensor R3 to obtain the integrated correction height of the wafer integration signal, and comparing the wafer starting correction heights of the two laser receiving sensors of each slot j
And
and taking the smaller value as the integrated correction height of the wafer shielding start time
Comparing the wafer end correction heights of the two laser receiving sensors of each slot position j
And
and taking the larger value as the integrated correction height of the wafer shielding end time
Step c 10: and calculating the wafer shielding thickness of each slot of the wafer boat according to the time-height polynomial and the wafer integration signal.
In the formula (I), the compound is shown in the specification,
in order to correct the wafer mask thickness,
the height is corrected for the integration of the wafer shielding start time,
and correcting the height for the integration of the wafer shielding end time.
Step c 11: and comparing the wafer shielding thickness with the reference wafer thickness by a threshold judgment method to obtain the wafer placing state in each slot of the wafer boat.
If the wafer shielding thickness meets the following requirements:
and is
In the formula, alpha and beta are upper and lower threshold proportionality coefficients, deltaoFor the wafer reference thickness, Δ d1The light transmission distance of the comb tooth groove is that the detected wafer in the wafer boat groove position isIn the bit state.
If the wafer shielding thickness meets the following requirements:
and is
The wafers detected in the boat slots are in a stacked state.
If the wafer shielding thickness meets the following requirements: alpha. deltao<δjAnd is and
the detected wafers in the boat slots are in a cross slot state.
Otherwise, it is determined that there is no wafer in the slot of the wafer boat.
The embodiment can tolerate larger installation error by correcting the wafer shielding signals of the second laser receiving sensor R2 and the third laser receiving sensor R3 based on the deviation of the height, thereby reducing the installation difficulty.
What has been described above is only a preferred embodiment of the present application, and the present invention is not limited to the above embodiment. It is to be understood that other modifications and variations directly derivable or suggested by those skilled in the art without departing from the spirit and concept of the present invention are to be considered as included within the scope of the present invention.
Claims (10)
1. A wafer state detection device is characterized by comprising a light path lifting module, a lifting outer cover, a microprocessor, a fixed inner cover arranged in the lifting outer cover, a cylinder arranged in the fixed inner cover and a light blocking ruler; the first side of the lifting outer cover is connected with one side of the light path lifting module, first light transmission holes are formed in the connected sides, a first laser receiving sensor is arranged on the second side of the lifting outer cover, the microprocessor is connected with the first laser receiving sensor and the light path lifting module, first light transmission grooves are formed in the opposite sides of the fixed inner cover, the light blocking ruler is placed between the first light transmission grooves, comb tooth grooves which are distributed in the same way as the grooves of the wafer boat are formed in the light blocking ruler, and the light blocking ruler is used for providing height information of detected wafers; the light path lifting module provides a laser transmission light path, and laser output by the light path lifting module vertically penetrates into the first laser receiving sensor through the first light hole, the first light groove and the comb tooth groove in sequence; the top of the fixed inner cover is provided with a telescopic hole, a piston rod of the cylinder is connected to the top of the lifting outer cover through the telescopic hole, so that the lifting outer cover and the light path lifting module are driven to synchronously move up and down, and the first light transmitting hole and the first laser receiving sensor are always located on the same horizontal line in the moving process.
2. The wafer state detection device of claim 1, wherein the optical path lifting module comprises a lifting frame with a hollow interior, and a first beam splitter, a second beam splitter, four second light holes, a laser transmitter connected to the microprocessor, a second laser receiving sensor and a third laser receiving sensor which are disposed inside the lifting frame; the first beam splitter and the second beam splitter are arranged on the first side of the lifting frame opposite to the second laser receiving sensor and the third laser receiving sensor, the second light holes I and the second light holes III are in a group, the second light holes II and the second light holes IV are in a group, the two groups of second light holes are arranged on the second side of the lifting frame opposite to each other, the second side of the lifting frame is positioned at the inner side of the first side of the lifting frame, the inner side of the second side of the lifting frame is enclosed to form an inner hollow area, the laser emitter is arranged on the first side of the lifting frame opposite to the first light holes and is arranged in a flush mode, and the first beam splitter and the second beam splitter are arranged between the laser emitter and the first light holes;
the crystal boat is placed in the inner hollow area, the opening of the crystal boat faces the beam splitter, a laser beam emitted by the laser emitter is divided into a first laser beam I and a first laser beam II through the first beam splitter, the first laser beam II sequentially enters the second light hole I, the crystal boat and the second light hole II to enter the second laser receiving sensor, the first laser beam I sequentially enters the second beam I and the second laser beam II through the second beam splitter, the second laser beam II sequentially enters the second light hole III, the crystal boat and the second light hole IV to enter the third laser receiving sensor, and the second laser beam I enters the first laser receiving sensor.
3. A wafer condition detecting method applied to the wafer condition detecting apparatus according to claim 1 or 2, the detecting method comprising:
the cylinder drives the light path lifting module and the lifting outer cover to move upwards;
acquiring level change waveforms and level change moments detected by three laser receiving sensors, knowing the light transmission intervals of the comb tooth grooves, and establishing the corresponding relation among the level change moments of the first laser receiving sensor, the height of the light blocking ruler and the number of the crystal boat groove;
fitting a time-height polynomial and fitting its residuals according to the correspondence:
the time-height polynomial is:
in the formula, a0、a1、a2、…、amIs a constant, m is a power of a polynomial,
detecting the height of the wafer;
the height residual is:
wherein i is the serial number of the level change time point of the first laser receiving sensor, hiIs tiThe actual height corresponding to the moment is determined by the light blocking ruler;
when the fitting height residual satisfies the following relation, the time-height is moreThe fitting result of the polynomial meets the precision requirement of the wafer placement state detection: srEpsilon is not more than epsilon, wherein epsilon is a given value and is set according to the actual precision requirement;
integrating the wafer shielding information detected by the second laser receiving sensor and the third laser receiving sensor to obtain a wafer integration signal;
calculating to obtain the wafer shielding thickness of each slot of the wafer boat according to the time-height polynomial and the wafer integration signal;
and comparing the wafer shielding thickness with the reference wafer thickness by a threshold judgment method to obtain the wafer placing state in each slot of the wafer boat.
4. The wafer state detection method of claim 3, wherein the step of integrating the wafer shielding information detected by the second laser receiving sensor and the third laser receiving sensor to obtain a wafer integration signal comprises:
setting the detection signal of the first laser receiving sensor in a light transmission area of the comb tooth groove as a high level and the detection signal of a shading area as a low level, and setting the second laser receiving sensor and the third laser receiving sensor to detect that a wafer shading signal is a high level and the wafer shading signal is a low level when the wafer shading signal is not shaded;
time integration is carried out on the parts with inconsistent level changes of the wafer shielding information to obtain a wafer integration signal, for the parts with inconsistent level changes, the earliest time point of a level rising edge is used as the starting time of the wafer shielding in the wafer integration signal, and the latest time point of a level falling edge is used as the ending time of the wafer shielding in the wafer integration signal;
then the wafer shielding thickness of each slot of the wafer boat is obtained as follows:
wherein j is the slot number of the wafer boat,
to pass through said time-altitudeThe polynomial calculates the height of the wafer shielding starting moment,
and calculating the height of the wafer shielding end moment by the time-height polynomial.
5. The method of claim 4, wherein the comparing the wafer shielding thickness with the reference wafer thickness by a threshold value determination method to obtain the wafer placement state in each slot of the boat comprises:
if the wafer shielding thickness meets the following requirements: alpha. deltao<δj≤β·δoAnd the high level time of the wafer integration signal is in the high level time range of the first laser receiving sensor at the same level change moment, wherein alpha and beta are upper and lower threshold proportionality coefficients, and deltaoIf the wafer reference thickness is the wafer reference thickness, the detected wafer in the wafer boat slot position is in an in-place state;
if the wafer shielding thickness meets the following requirements: deltaj＞β·δoWhen the high level time of the wafer integration signal is within the high level time range of the first laser receiving sensor at the same level change moment, the detected wafers in the wafer boat slots are in a laminated state;
if the wafer shielding thickness meets the following requirements: alpha. deltao<δjIf the high level time of the wafer integration signal is coincident with the low level time of the first laser receiving sensor, the detected wafer in the slot position of the wafer boat is in a cross-slot state;
otherwise, it is determined that there is no wafer in the slot of the wafer boat.
6. The wafer state detection method according to claim 3, wherein after the step of fitting a time-height polynomial according to the correspondence relationship and fitting a residual thereof, the detection method further comprises:
respectively substituting the level change moments of the wafer shielding signals detected by the second laser receiving sensor and the third laser receiving sensor into the time-height polynomial to obtain the wafer height corresponding to the level change moment, and calculating the wafer shielding thickness of each slot of the wafer boat according to the wafer height to obtain:
in the formula, r is a serial number of a laser receiving sensor, r is equal to 2 corresponding to the second laser receiving sensor, and r is equal to 3 corresponding to the third laser receiving sensor; j is the number of the slot position,
for t calculated by said time-height polynomialrj1Wafer height at time trj1For the moment corresponding to the rising edge of the wafer shielding signal level detected by the laser receiving sensor r,
for t calculated by said time-height polynomialrj2Wafer height at time trj2The time corresponding to the wafer shielding signal level falling edge detected by the laser receiving sensor r;
extracting the shielding thickness of each wafer to satisfy the following conditions:
(α·δo<δ2j≤β·δo) And (alpha. deltao<δ3j≤β·δo) Taking the slot position number corresponding to the wafer shielding thickness as a judgment slot position and recording the judgment slot position in a sequence z; in the formula, alpha and beta are upper and lower threshold proportionality coefficients, deltaoA reference thickness for the wafer;
in the sequence z, calculating the average value of the height deviation of the second laser receiving sensor and the third laser receiving sensor according to the wafer heights recorded by the second laser receiving sensor and the third laser receiving sensor as follows:
wherein k is equal to z, nzIs the number of elements in the sequence z;
starting height of a k slot position wafer corresponding to the rising edge of the wafer shielding signal level detected by the third laser receiving sensor,
starting height of a k slot position wafer corresponding to the rising edge of the level of the wafer shielding signal detected by the second laser receiving sensor,
for the wafer end height of the k slot position corresponding to the wafer shielding signal level falling edge detected by the third laser receiving sensor,
the wafer end height of the k slot position corresponding to the wafer shielding signal level falling edge detected by the second laser receiving sensor is obtained;
the wafer height corresponding to the level change moment of the wafer shielding signals detected by the second laser receiving sensor and the third laser receiving sensor is subjected to deviation correction through the height deviation average value,
in the formula (I), the compound is shown in the specification,
for second laser receiving and transmittingThe fitting height of the slot position number j in the wafer shielding signal detected by the sensor comprises the starting height of the wafer
And end of wafer height
The corrected height of the slot number j in the wafer shielding signal detected by the second laser receiving sensor comprises the corrected height of the wafer
And end of wafer correction height
Fitting height of slot number j in wafer shielding signal detected by third laser receiving sensor, including wafer starting height
And end of wafer height
The corrected height of the slot number j in the wafer shielding signal detected by the third laser receiving sensor comprises the corrected height of the wafer
And end of wafer correction height
7. The wafer state detection method of claim 6, wherein the step of integrating the wafer shielding information detected by the second laser receiving sensor and the third laser receiving sensor to obtain a wafer integration signal comprises:
carrying out height integration on correction heights corresponding to the wafer shielding signals detected by the second laser receiving sensor and the third laser receiving sensor to obtain an integrated correction height of a wafer integration signal, comparing the wafer starting correction heights of the two laser receiving sensors of each slot position, taking a smaller value as the integrated correction height of the wafer shielding starting moment, comparing the wafer finishing correction heights of the two laser receiving sensors of each slot position, and taking a larger value as the integrated correction height of the wafer shielding finishing moment;
then the wafer shielding thickness of each slot of the wafer boat is obtained as follows:
in the formula (I), the compound is shown in the specification,
in order to correct the wafer mask thickness,
the height is corrected for the integration of the wafer shielding start time,
and correcting the height for the integration of the wafer shielding end time.
8. The method of claim 7, wherein the comparing the wafer shielding thickness with the reference wafer thickness by a threshold determination method to obtain the wafer placement status in each slot of the boat comprises:
if the wafer shielding thickness meets the following requirements:
and is
In the formula, alpha and beta are upper and lower threshold proportionality coefficients, deltaoFor the wafer reference thickness, Δ d1If the light transmission distance of the comb tooth groove is the light transmission distance, the detection wafer in the wafer boat groove position is in an in-place state;
if the wafer shielding thickness meets the following requirements:
and is
Then the detected wafers in the slot position of the wafer boat are in a lamination state;
if the wafer shielding thickness meets the following requirements: alpha. deltao<δjAnd is and
then the detected wafer in the slot position of the wafer boat is in a cross-slot state;
otherwise, it is determined that there is no wafer in the slot of the wafer boat.
9. The wafer state detection method as claimed in claim 6, wherein after the step of calculating the average value of the height deviation of the second laser receiving sensor and the third laser receiving sensor according to the wafer height recorded by the second laser receiving sensor and the third laser receiving sensor, the detection method further comprises:
by passing
Rechecking each slot position in the sequence z, wherein gamma is a limiting proportion factor and delta is0To limit cardinality, the sequence z is guaranteed to be cycled through a limited number of timesThe ring convergence is stable;
if each slot k in the sequence z meets the re-inspection condition, the step of performing deviation correction on the wafer height corresponding to the level change moment of the wafer shielding signals detected by the second laser receiving sensor and the third laser receiving sensor through the height deviation average value is carried out, otherwise, the step of removing the slot number which is not in accordance with the sequence z and re-executing the step of calculating the height deviation average value of the second laser receiving sensor and the third laser receiving sensor according to the wafer height recorded by the second laser receiving sensor and the third laser receiving sensor is carried out.
10. The wafer condition detecting method as claimed in claim 3, wherein after the step of obtaining the wafer placing condition in each slot of the boat, the detecting method further comprises:
and transmitting the wafer placement state to operation equipment, taking the wafer in an in-place state by a mechanical arm in the operation equipment, performing operation, then placing the wafer back to the original position, driving the optical path lifting module and the lifting outer cover to move downwards by the air cylinder, re-executing the step of acquiring the level change and the time point of the level change detected by the three laser receiving sensors, checking the wafer placement state obtained at this time and the wafer placement state before transmission, if the wafer placement states before and after transmission are inconsistent, indicating that the wafer still remains in the operation equipment or falls in the transmission process, and giving an alarm by the wafer state detection device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011203131.1A CN112305631B (en) | 2020-11-02 | 2020-11-02 | Wafer state detection device and detection method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011203131.1A CN112305631B (en) | 2020-11-02 | 2020-11-02 | Wafer state detection device and detection method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112305631A CN112305631A (en) | 2021-02-02 |
| CN112305631B true CN112305631B (en) | 2021-06-15 |
Family
ID=74333691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011203131.1A Active CN112305631B (en) | 2020-11-02 | 2020-11-02 | Wafer state detection device and detection method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112305631B (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9368379B2 (en) * | 2012-03-14 | 2016-06-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods of controlling semiconductor wafer fabrication processes |
| CN205984923U (en) * | 2016-08-26 | 2017-02-22 | 中芯国际集成电路制造（天津）有限公司 | Wafer boat |
| CN108107812A (en) * | 2016-11-24 | 2018-06-01 | 沈阳芯源微电子设备有限公司 | Wafer position condition checkout gear and method in wafer case based on PLC controls |
| CN110164787B (en) * | 2018-02-11 | 2021-05-25 | 江苏鲁汶仪器有限公司 | Cavity wafer position detection device and detection method |
| CN110600404B (en) * | 2019-08-28 | 2022-05-13 | 福建省福联集成电路有限公司 | Equipment for detecting placement condition of wafer |
| CN210516675U (en) * | 2019-11-27 | 2020-05-12 | 和舰芯片制造(苏州)股份有限公司 | Device for detecting wafer sliding out |
-
2020
- 2020-11-02 CN CN202011203131.1A patent/CN112305631B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN112305631A (en) | 2021-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20150276390A1 (en) | Correction device and correction method for optical measuring apparatus | |
| CN112305631B (en) | Wafer state detection device and detection method thereof | |
| CN101533796A (en) | Control system for silicone chip transmission and method | |
| CN108107812A (en) | Wafer position condition checkout gear and method in wafer case based on PLC controls | |
| KR20060060057A (en) | Wafer prealignment apparatus, its method for judging wafer presence, method for sensing wafer edge position, computer-readable record medium with recorded program for executing this position sensing method, apparatus for sensing wafer edge position, and prealignment sensor | |
| CN201859153U (en) | Pre-centered positioning system of semiconductor chip test system | |
| CN111591051A (en) | Printing height control system and method for printing display | |
| US5159202A (en) | Wafer shape detecting method | |
| CN103801519A (en) | Reclaiming and testing integrating structure method and mechanism and silicon microphone sorting machine | |
| US5982492A (en) | Method of and apparatus for determining the center of a generally circular workpiece relative to a rotation axis of the workpiece | |
| JP2002313756A (en) | Blade tip end position detector and detection method | |
| CN113305448B (en) | Focal depth automatic compensation method, device and system | |
| CN115042018A (en) | High-precision batch drilling processing method and processing system for sectional materials | |
| CN112453689B (en) | Optical center position adjusting device and optical center position adjusting method | |
| CN220774302U (en) | Wafer measuring mechanism | |
| EP3552752B1 (en) | Laser processing device | |
| CN1312526C (en) | Method for controlling dual-feedback high-precision light beam aiming | |
| CN209150070U (en) | Substrate transport mechanisms | |
| CN114323268B (en) | Energy detection device and method for photoetching machine | |
| CN219859967U (en) | Elevator floor calibration device | |
| CN216955786U (en) | Wafer detection system capable of realizing wafer mapping function | |
| JPH06120103A (en) | Aligner | |
| CN105467885B (en) | Full automatic human body safety detector | |
| CN110645895B (en) | System and method for measuring width of nose cone of fan blade front edge reinforcing edge | |
| CN113188447B (en) | Method for improving precision of high-frequency laser scanner |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No.11 Lijiang Road, Wuxi, Jiangsu 214000 Patentee after: Wuxi zhuohai Technology Co.,Ltd. Address before: No.11 Lijiang Road, Wuxi, Jiangsu 214000 Patentee before: WUXI ZHUOHAI TECHNOLOGY Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |