CN112304429A - Photoelectric detection circuit - Google Patents
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- CN112304429A CN112304429A CN202011148579.8A CN202011148579A CN112304429A CN 112304429 A CN112304429 A CN 112304429A CN 202011148579 A CN202011148579 A CN 202011148579A CN 112304429 A CN112304429 A CN 112304429A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
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Abstract
The invention provides a photoelectric detection circuit which comprises a photodiode, a trans-impedance amplifier, a bootstrap module and a shunt module. The photodiode is connected with the transimpedance amplifier, the bootstrap module and the shunt module, and the bootstrap module is connected with two ends of the shunt module; the trans-impedance amplifier comprises a feedback resistor, and the resistance value of the feedback resistor is larger than the total resistance value of the shunt module. Because the total resistance value of the shunt module is smaller than the resistance value of the feedback resistor of the transimpedance amplifier, the direct current component generated by the photodiode can flow out through the shunt module and cannot flow into the transimpedance amplifier. The bootstrap module is used for making the voltage at shunt module both ends equal, and then raises the alternating current impedance of shunt module for alternating current signal that photodiode produced can not flow into the shunt module, and flows out from the transimpedance amplifier, forms the alternating current voltage of enlargiing, thereby can improve the gain of transimpedance amplifier, improves photoelectric detection circuit's sensitivity.
Description
Technical Field
The invention relates to the field of optical communication, in particular to a photoelectric detection circuit.
Background
A photodiode is one type of diode used in a photodetection circuit to convert an optical signal into an electrical signal. In a conventional photo detection circuit, a transimpedance amplifier is usually connected behind a photodiode, and a current signal generated by the photodiode is converted into an amplified voltage signal through the transimpedance amplifier.
When the photodiode is used in some specific application environments, such as LED (Light Emitting Diode) Light receiving, it needs to resist the interference of the ambient Light. When the photodiode receives the natural light and the LED light at the same time, a direct current component is generated under the action of the natural light, an alternating current component is generated under the action of the LED light, and when the LED light is detected, the interference of the natural light on the photodiode needs to be eliminated. The traditional photoelectric detection circuit has poor ambient light interference resistance, and a direct current signal generated by the photodiode under the action of ambient light can directly flow into the trans-impedance amplifier, so that the gain of the amplifier is seriously reduced, and the sensitivity of the photoelectric detection circuit is influenced.
Disclosure of Invention
The invention aims to provide a photoelectric detection circuit.
In order to achieve the above object, an embodiment of the present invention provides an optical detection circuit, including: the device comprises a photodiode, a trans-impedance amplifier, a bootstrap module and a shunt module;
the photodiode is connected with the transimpedance amplifier, the bootstrap module and the shunt module, and the bootstrap module is connected with two ends of the shunt module;
the trans-impedance amplifier comprises a feedback resistor, and the resistance value of the feedback resistor is greater than the total resistance value of the shunt module.
As a further improvement of an embodiment of the present invention, the transimpedance amplifier includes a first operational amplifier unit and a first dc blocking unit;
one end of the first direct current blocking unit is connected with one end of the feedback resistor and the cathode of the photodiode, and the other end of the first direct current blocking unit is connected with the inverted input end of the first operational amplifier unit and used for isolating the direct current component from flowing into the first operational amplifier unit;
the first operational amplifier unit is used for converting alternating current components generated by the photodiode into amplified voltage signals.
As a further improvement of the embodiment of the present invention, the transimpedance amplifier further includes a phase compensation unit and a dc offset unit, after the phase compensation unit and the dc offset unit are connected in parallel, one end of the phase compensation unit is connected to the inverting input terminal of the first operational amplifier unit, and the other end of the phase compensation unit is connected to the output terminal of the first operational amplifier unit.
As a further improvement of the embodiment of the present invention, the bootstrap module includes a second operational amplifier unit, an inverting input terminal of the second operational amplifier unit is connected to an output terminal of the second operational amplifier unit, an output terminal of the second operational amplifier unit is connected to one end of the shunt module, the other end of the shunt module is connected to a cathode of the photodiode and a non-inverting input terminal of the second operational amplifier unit, and the bootstrap module is configured to increase an ac impedance of the shunt module and prevent an ac component of the photodiode from flowing through the shunt module.
As a further improvement of the embodiment of the present invention, the bootstrap module further includes a second dc blocking unit, one end of the second dc blocking unit is connected to the non-inverting input end of the second operational amplifier unit, and the other end of the second dc blocking unit is connected to a connection point between the cathode of the photodiode and the shunt module, and is configured to isolate that the dc component flows into the second operational amplifier unit.
As a further improvement of an embodiment of the present invention, the total resistance value of the shunt module decreases as the dc component increases.
As a further improvement of an embodiment of the present invention, the shunt module is configured to provide a path for a dc component of the photodiode;
the shunt module comprises at least one switch unit and at least two resistors, wherein the number of the resistors is greater than that of the switch units, each resistor is connected in series, and each switch unit is correspondingly connected with one resistor in parallel.
As a further improvement of an embodiment of the present invention, the shunt module includes a first switch unit, a second switch unit, a resistor R1, a resistor R2, and a resistor R3;
the control end of first switch element connects the output of first operational amplifier unit with the one end of resistance R1, the first end of first switch element inserts the high level, the second end of first switch element is connected the other end of resistance R1 the control end of second switch element with the one end of resistance R2, the first end of second switch element inserts the high level, the second end of second switch element is connected the other end of resistance R2 with the one end of resistance R3, the other end of resistance R3 is connected the negative pole of photodiode with the tie point of second blocking unit.
As a further improvement of an embodiment of the present invention, the present invention further includes a resistor R4, wherein the resistor R4 connects the input terminal of the bootstrap module and the cathode of the photodiode;
the resistance value of the resistor R4 is larger than that of the feedback resistor.
As a further improvement of the embodiment of the present invention, the present invention further includes a transistor Q1, a base of the transistor Q1 is connected to the first reference voltage, a collector of the transistor Q1 is connected to a high level, and an emitter of the transistor Q1 is connected to a connection point between the output end of the bootstrap module and the shunt module.
In the photoelectric detection circuit, the total resistance value of the shunt module is smaller than the resistance value of the feedback resistor of the transimpedance amplifier, so that the direct current component generated by the photodiode can flow out through the shunt module and cannot flow into the transimpedance amplifier. The bootstrap module is used for making the voltage at the two ends of the shunt module equal, and further raising the alternating current impedance of the shunt module, so that an alternating current signal generated by the photodiode cannot flow into the shunt module and flows out of the transimpedance amplifier to form amplified alternating current voltage.
Drawings
FIG. 1 is a schematic diagram of a photoelectric detection circuit module according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a photoelectric detection circuit module according to another embodiment of the present invention;
fig. 3 is a schematic diagram of a circuit structure of a shunt module in a photoelectric detection circuit according to an embodiment of the present invention;
fig. 4 is a structural diagram of a photoelectric detection circuit according to an embodiment of the present invention.
Detailed Description
The invention will be described in detail hereinafter with reference to an embodiment shown in the drawings. These embodiments are not intended to limit the present invention, and structural and functional changes made by those skilled in the art according to these embodiments are included in the scope of the present invention.
As shown in fig. 1, an embodiment of the present invention provides a photodetection circuit for converting an optical signal into an electrical signal and eliminating interference of ambient light, the photodetection circuit including a photodiode D1, a transimpedance amplifier 100, a bootstrap module 200, and a shunt module 300. The bootstrap module 200 connects two ends of the shunting module 300 to the photodiode D1, wherein the anode of the photodiode D1 is grounded, and the cathode connects the bootstrap module 200 and the shunting module 300. The bootstrap module 200 is connected to two ends of the shunt module 300, and is configured to equalize the equivalent ac voltages at the two ends of the shunt module 300, so as to improve the equivalent ac impedance of the shunt module 300, and the ac component generated by the photodiode D1 cannot flow out of the bootstrap module 200. The transimpedance amplifier 100 is connected to the photodiode D1, and is configured to perform current-voltage conversion, amplification, and output on the alternating current component generated by the photodiode D1. The transimpedance amplifier 100 includes a feedback resistor, and a resistance value of the feedback resistor is greater than a total resistance value of the shunt module 300, so that the shunt module 300 can provide a path for a direct current component generated by the photodiode D1, and the direct current component does not flow into the transimpedance amplifier 100, thereby reducing an influence on the transimpedance amplifier 100.
In the photo-detection circuit provided in the above embodiment, the total resistance of the shunt module 300 is smaller than the resistance of the feedback resistor of the transimpedance amplifier 100, so that the dc component generated by the photodiode D1 can flow out through the shunt module 300 and cannot flow into the transimpedance amplifier 100. The bootstrap module 200 is configured to equalize voltages at two ends of the shunt module 300, so as to raise an ac impedance of the shunt module 300, so that an ac signal generated by the photodiode D1 does not flow into the shunt module 300 and flows out of the transimpedance amplifier 100 to form an amplified ac voltage, and therefore, on one hand, the circuit isolates a dc component from entering the transimpedance amplifier, and on the other hand, the circuit concentrates an ac component to flow through the transimpedance amplifier, thereby improving a gain of the transimpedance amplifier 100 and improving a sensitivity of the photodetection circuit.
In one embodiment, as shown in fig. 2, the transimpedance amplifier 100 includes a first operational amplifier unit 110 and a first dc blocking unit 120, and the first operational amplifier unit 110 includes a non-inverting input terminal, an inverting input terminal, and an output terminal. The non-inverting input terminal of the first operational amplifier unit 110 is configured to be connected to a second reference voltage, the inverting input terminal of the first operational amplifier unit 110 is connected to one end of the first dc blocking unit 120, the other end of the first dc blocking unit 120 is connected to one end of the feedback resistor and the cathode of the photodiode D1, the output terminal of the first operational amplifier unit 110 is connected to the other end of the feedback resistor, the first operational amplifier unit 110 is configured to convert an ac component generated by the photodiode D1 into an amplified ac voltage, and an amplification factor of the amplified ac voltage is related to the feedback resistor. The first dc blocking unit 120 is configured to isolate a dc component flowing into the first operational amplifier unit 110, so as to prevent voltage offset of the non-inverting input terminal and the inverting input terminal of the first operational amplifier unit 110 caused by the dc component, and further reduce an influence of the dc component on the first operational amplifier unit 110. In this embodiment, the first blocking unit 120 may be a capacitor, and the dc component may be isolated by using the blocking ac characteristic of the capacitor, and the capacitor has a simple structure without increasing the circuit complexity.
Further, the transimpedance amplifier 100 further includes a phase compensation unit 130 and a dc offset unit 140, where after the phase compensation unit 130 and the dc offset unit 140 are connected in parallel, one end of the phase compensation unit 130 is connected to the inverting input terminal of the first operational amplifier unit 110, and the other end of the phase compensation unit 130 is connected to the output terminal of the first operational amplifier unit 110. In this embodiment, the phase compensation unit 130 may be a compensation capacitor, and is configured to provide phase compensation for the amplifying circuit and prevent the circuit from oscillating, the dc bias unit 140 may be a bias resistor, and provides a bias voltage for the amplifying circuit, and a resistance value of the bias resistor is much larger than a resistance value of the feedback resistor, so that most of the ac component enters the feedback resistor, and the gain of the first operational amplifier unit 110 is improved.
In one embodiment, the bootstrap module 200 includes a second operational amplifier unit 210, an inverting input terminal of the second operational amplifier unit 210 is connected to an output terminal of the second operational amplifier unit 210, an output terminal of the second operational amplifier unit 210 is connected to one end of the shunt module 300, and the other end of the shunt module 300 is connected to a cathode of the photodiode D1 and a non-inverting input terminal of the second operational amplifier unit 210. Because the inverting input end of the second operational amplifier unit 210 is connected to the output end, and the chop characteristic of the operational amplifier indicates that the voltages of the non-inverting input end, the inverting input end and the output end of the second operational amplifier unit 210 are the same, and because the two ends of the shunt module 300 are respectively connected to the non-inverting input end and the output end of the second operational amplifier unit 210, the potentials at the two ends of the shunt module 300 are equal, and further the first operational amplifier unit 210 improves the ac impedance of the shunt module 300, the shunt module 300 can prevent the ac component generated by the photodiode D1 from flowing through without hindering the dc component generated by the photodiode D1 from flowing through, the dc component generated by the photodiode D1 does not flow into the transimpedance amplifier 100, and the ac component can be amplified by the transimpedance amplifier 100, thereby improving the gain of the transimpedance amplifier and improving the sensitivity of the photodetection circuit.
Further, the bootstrap module 200 further includes a second blocking unit 220, one end of the second blocking unit 220 is connected to the non-inverting input terminal of the second operational amplifier unit 210, and the other end is connected to the cathode of the photodiode D1 and the connection point of the shunt module 300. The second dc blocking unit 220 may be a capacitor for isolating the dc component generated by the photodiode D1 from entering the second op-amp unit 210 to affect the bootstrap circuit.
In one embodiment, the total resistance of the shunt module 300 decreases as the dc component increases. When the dc component output by the photodiode D1 is small, the total resistance of the shunt module 300 is large, and the noise performance of the photoelectric detection circuit is good, and when the dc component output by the photodiode D1 is large, the total resistance of the shunt module 300 is small, so that the large dc component can be quickly circulated, and therefore, the shunt module 300 adopts a variable resistance structure, which can provide a path for the dc component and also can give consideration to the noise performance of the photoelectric detection circuit.
Further, the shunt module 300 includes at least one switch unit and at least two resistors, the number of the resistors is greater than the number of the switch units, each resistor is connected in series, and each switch unit is connected in parallel with a corresponding resistor for controlling whether the corresponding resistor is connected to the series circuit.
Specifically, in one embodiment, as shown in fig. 3, the shunt module 300 includes a first switch unit N1, a second switch unit N2, a resistor R1, a resistor R2, and a resistor R3. The first and second switching units N1 and N2 may be N-channel transistors that are turned on by a high voltage and turned off by a low voltage. In this embodiment, the first switch unit N1 is a MOS transistor N1, the second switch unit is a MOS transistor N2, the control end of the MOS transistor N1 is connected to a point a and one end of a resistor R1, the drain of the MOS transistor N1 is connected to a high level, the source of the MOS transistor N1 is connected to the other end of the resistor R1 and the control end of the MOS transistor N2, the drain of the MOS transistor N2 is also connected to a high level, the source of the MOS transistor N2 is connected to the other end of the resistor R2 and one end of the resistor R3, and the other end of the resistor R3 is connected to a point B, where the point a is a connection point between the output end of the second operational amplifier unit 210 and the shunt module 300, and the point B is a connection point between the cathode of the photodiode D1 and the shunt module. When the AB passage has no direct current, the MOS transistor N1 and the MOS transistor N2 are in an off state, and the resistance between the two points AB is equal to the sum of the resistances of R1, R2 and R3. When direct current passes through the AB path, the MOS transistor N1 and the MOS transistor N2 are gradually conducted to cause the resistance value between the two points AB to be reduced, and finally when the MOS transistor N1 and the MOS transistor N2 are completely conducted, the resistance between the two points AB is equal to R3. The resistance of the shunt module 300 decreases as the flowing dc current increases, so that most of the dc current can flow through the shunt module 300, and the influence on the gain of the post-stage transimpedance amplifier 100 is reduced. Therefore, when there is strong ambient light, the dc component generated by the photodiode D1 has a much reduced effect on the gain of the chopstick amplifier. In the above embodiment, the shunt module is only described as an example that the shunt module includes two switch units and three resistors, and a user may also set other numbers of switch units and resistors according to needs, which is not limited herein.
Fig. 4 is a block diagram of a photodetection circuit according to an embodiment of the present application, wherein the transimpedance amplifier 100 includes a first operational amplifier unit a1 and a feedback resistor R5, the first dc blocking unit 120 includes a capacitor C1, the phase compensation unit 130 includes a capacitor C2, and the dc bias unit 140 includes a resistor R6. The bootstrap module 200 includes a second operational amplifier unit a2, and the second dc blocking unit 220 includes a capacitor C3. The specific circuit structure of the current limiting module 300 is shown in fig. 3, and fig. 4 illustrates the circuit structure shown in fig. 3 by using a variable resistance structure X1.
The anode of the photodiode D1 is grounded, and the cathode is connected to the inverting input terminal of the operational amplifier a1 via the capacitor C1. One end of the feedback resistor R5 is connected to a connection point between the capacitor C1 and the cathode of the photodiode D1, and the other end is connected to the output terminal of the operational amplifier a 1. The capacitor C2 and the resistor R6 are connected in parallel, one end of the capacitor C2 is connected with the inverting input end of the operational amplifier A1, and the other end of the capacitor C2 is connected with the output end. The non-inverting input terminal of the operational amplifier a1 is used for receiving a second reference voltage. One end of the variable resistance structure X1 is connected with the output end of the operational amplifier A2, the other end is connected with the connection point of one end of the capacitor C3 and the cathode of the photodiode D1, and the other end of the capacitor C3 is connected with the non-inverting input end of the operational amplifier A2. The photoelectric detection circuit further comprises a resistor R4 and a triode Q1, one end of the resistor R4 is connected with a first reference voltage, the other end of the resistor R4 is connected with the non-inverting input end of the operational amplifier A2 and is connected with the cathode of the photodiode D1 through a capacitor C2, the base of the triode Q1 is connected with the first reference voltage, the collector of the triode Q1 is connected with a high level, and the emission stage is connected with the output end of the operational amplifier A2 and the connection point of the variable resistance structure X1.
The working principle of the photoelectric detection circuit provided by the embodiment is as follows:
when the photodetection circuit of the present embodiment is used to detect LED light, the photodiode D1 generates an alternating current component and a direct current component under the influence of the LED light and ambient light, respectively, due to the influence of natural light in the environment. The resistance value of the variable resistance structure X1 can be adjusted according to the magnitude of the dc component, and when the current of the dc component is large, the resistance value of the variable resistance structure X1 is small, so that most of the dc component can circulate. A small amount of dc component is blocked by the capacitor C1 and cannot enter the operational amplifier a1, so that the dc component does not affect the transimpedance amplifier 100, and a part of dc component is blocked by the capacitor C3 and cannot enter the operational amplifier a2, so that the bootstrap circuit is not affected. The inverting input end of the operational amplifier a2 is connected to the output end to form a bootstrap circuit, and further the voltages of the non-inverting input end, the inverting input end and the output end of the operational amplifier a2 are equal, and since the two ends of the variable resistance structure X1 are connected to the output end and the non-inverting input end of the operational amplifier a2, the voltages of the two ends of the variable resistance structure X1 are equal, and the equivalent alternating current impedance is infinite, so that the alternating current component generated by the photodiode D1 cannot flow through the variable resistance structure X1. The resistance of the resistor R4 is much larger than that of the feedback resistor R5, so that the ac component does not enter the resistor R4. The resistance of the resistor R6 in the operational amplifier a1 is also much larger than the resistance of the feedback resistor R5, so that the ac component generated by the photodiode D1 flows to the output terminal of the operational amplifier a1 through the feedback resistor R5, and the operational amplifier a1 can convert the ac current generated by the photodiode D1 into an amplified ac voltage. The transistor Q1 can prevent the emitter potential of the transistor Q1 from being pulled to cause the led D1 to be forward biased when the ac component is too large.
The circuit structure provides a direct current path for a direct current component of the photodiode D1 through the variable impedance structure X1, and improves equivalent alternating current impedance of the variable impedance structure X1 through an alternating current bootstrap circuit formed by the operational amplifier A2, so that alternating current signals are prevented from being shunted by the branch circuit and alternating current gain attenuation occurs, meanwhile, the direct current component can be prevented from being amplified by the transimpedance amplifier through the blocking capacitor C1, saturation of the transimpedance amplifier under the action of the direct current signals is avoided, most of the direct current component flows through the variable impedance structure X1 under the combined action of the three aspects, and useful alternating current component flows through the transimpedance amplifier A1 and is effectively amplified, so that the influence of environmental natural light on the existing photoelectric detection circuit is solved.
In the several embodiments provided in the present application, it should be understood that the disclosed modules, systems and methods may be implemented in other manners. The above-described system embodiments are merely illustrative, and the division of the modules into only one logical functional division may be implemented in practice in other ways, for example, multiple modules or components may be combined or integrated into another system, or some features may be omitted, or not implemented.
The modules described as separate parts may or may not be physically separate, and parts displayed as modules may or may not be physical modules, that is, may be located in one place, or may also be distributed on a plurality of network modules, and some or all of the modules may be selected according to actual needs to achieve the purpose of the embodiment.
In addition, each functional module in the embodiments of the present application may be integrated into one processing module, or each module may exist alone physically, or 2 or more modules may be integrated into one module. The integrated module can be realized in a hardware form, and can also be realized in a form of hardware and a software functional module.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may be modified or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present application.
Claims (10)
1. A photodetection circuit, characterized in that it comprises: the device comprises a photodiode, a trans-impedance amplifier, a bootstrap module and a shunt module;
the photodiode is connected with the transimpedance amplifier, the bootstrap module and the shunt module, and the bootstrap module is connected with two ends of the shunt module;
the trans-impedance amplifier comprises a feedback resistor, and the resistance value of the feedback resistor is greater than the total resistance value of the shunt module.
2. The photodetection circuit according to claim 1, wherein the transimpedance amplifier comprises a first operational amplifier unit and a first dc blocking unit;
one end of the first direct current blocking unit is connected with one end of the feedback resistor and the cathode of the photodiode, and the other end of the first direct current blocking unit is connected with the inverted input end of the first operational amplifier unit and used for isolating the direct current component from flowing into the first operational amplifier unit;
the first operational amplifier unit is used for converting alternating current components generated by the photodiode into amplified voltage signals.
3. The photodetection circuit according to claim 2, wherein the transimpedance amplifier further comprises a phase compensation unit and a dc offset unit, and after the phase compensation unit and the dc offset unit are connected in parallel, one end of the phase compensation unit is connected to the inverting input terminal of the first operational amplifier unit, and the other end of the phase compensation unit is connected to the output terminal of the first operational amplifier unit.
4. The photodetection circuit according to claim 1, wherein the bootstrap module comprises a second operational amplifier unit, an inverting input terminal of the second operational amplifier unit is connected to an output terminal of the second operational amplifier unit, an output terminal of the second operational amplifier unit is connected to one end of the shunt module, the other end of the shunt module is connected to a cathode of the photodiode and a non-inverting input terminal of the second operational amplifier unit, and the bootstrap module is configured to increase an ac impedance of the shunt module and prevent an ac component of the photodiode from flowing through the shunt module.
5. The photodetection circuit according to claim 4, wherein the bootstrap module further comprises a second dc blocking unit, one end of the second dc blocking unit is connected to the non-inverting input terminal of the second operational amplifier unit, and the other end of the second dc blocking unit is connected to the cathode of the photodiode and the connection point of the shunt module, for isolating the dc component flowing into the second operational amplifier unit.
6. The photodetection circuit according to claim 5, characterized in that the total resistance value of the shunt module decreases with an increase of the direct current component.
7. The photodetection circuit according to claim 6, wherein the shunt module is configured to provide a path for a dc component of the photodiode;
the shunt module comprises at least one switch unit and at least two resistors, wherein the number of the resistors is greater than that of the switch units, each resistor is connected in series, and each switch unit is correspondingly connected with one resistor in parallel.
8. The photodetection circuit according to claim 7, characterized in that the shunt module comprises a first switch unit, a second switch unit, a resistor R1, a resistor R2, and a resistor R3;
the control end of first switch element connects the output of first operational amplifier unit with the one end of resistance R1, the first end of first switch element inserts the high level, the second end of first switch element is connected the other end of resistance R1 the control end of second switch element with the one end of resistance R2, the first end of second switch element inserts the high level, the second end of second switch element is connected the other end of resistance R2 with the one end of resistance R3, the other end of resistance R3 is connected the negative pole of photodiode with the tie point of second blocking unit.
9. The photodetection circuit according to claim 1, further comprising a resistor R4, wherein the resistor R4 connects the input terminal of the bootstrap module and the cathode of the photodiode;
the resistance value of the resistor R4 is larger than that of the feedback resistor.
10. The photodetection circuit according to claim 1, further comprising a transistor Q1, wherein a base of the transistor Q1 is connected to the first reference voltage, a collector of the transistor Q1 is connected to a high level, and an emitter of the transistor Q1 is connected to the output of the bootstrap module and the connection point of the shunt module.
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| CN109861647A (en) * | 2017-11-30 | 2019-06-07 | 北京汇冠触摸技术有限公司 | A kind of low noise high-precision amplification circuit |
| US20200200602A1 (en) * | 2018-12-21 | 2020-06-25 | Omni Design Technologies Inc. | Photo Receiver Circuits |
| CN111726099A (en) * | 2020-07-27 | 2020-09-29 | 厦门亿芯源半导体科技有限公司 | Accurate automatic gain control circuit |
-
2020
- 2020-10-23 CN CN202011148579.8A patent/CN112304429B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1079625A (en) * | 1996-09-05 | 1998-03-24 | Hitachi Ltd | Light receiving circuit |
| JP2006005599A (en) * | 2004-06-17 | 2006-01-05 | Kyosan Electric Mfg Co Ltd | Light receiving device |
| CN109861647A (en) * | 2017-11-30 | 2019-06-07 | 北京汇冠触摸技术有限公司 | A kind of low noise high-precision amplification circuit |
| CN108534893A (en) * | 2018-04-04 | 2018-09-14 | 西安工业大学 | A kind of photoelectric detective circuit for optical heterodyne detection |
| US20200200602A1 (en) * | 2018-12-21 | 2020-06-25 | Omni Design Technologies Inc. | Photo Receiver Circuits |
| CN111726099A (en) * | 2020-07-27 | 2020-09-29 | 厦门亿芯源半导体科技有限公司 | Accurate automatic gain control circuit |
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| CN112304429B (en) | 2022-09-30 |
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