CN112289923A - Magnetic tunnel junction structure of magnetic random access memory - Google Patents
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Abstract
The application provides a magnetic tunnel junction structure of magnetic random access memory, magnetic tunnel junction structure includes two layers of lattice conversion layers, realizes that the anti-ferromagnetic layer that has face-centered cubic crystal structure piles up lattice conversion and the strong ferromagnetic coupling between the reference layer to having body-centered cubic, is favorable to the magnetic tunnel junction unit in the improvement of magnetism, electricity and yield and the reduction of device.
Description
Technical Field
The present invention relates to the field of memory technologies, and in particular, to a magnetic tunnel junction structure of a magnetic random access memory.
Background
Magnetic Random Access Memory (MRAM) in a Magnetic Tunnel Junction (MTJ) having Perpendicular Anisotropy (PMA), as a free layer for storing information, has two magnetization directions in a vertical direction, that is: upward and downward, respectively corresponding to "0" and "1" or "1" and "0" in binary, in practical application, the magnetization direction of the free layer will remain unchanged when reading information or leaving empty; during writing, if a signal different from the existing state is input, the magnetization direction of the free layer will be flipped by 180 degrees in the vertical direction. The ability of the mram to maintain the magnetization direction of the free Layer is called Data Retention or Thermal Stability (Thermal Stability), and is different in different application situations, and for a typical Non-volatile Memory (NVM), the requirement of Data Retention is to retain Data for 10 years at 125 ℃, and the Data Retention or Thermal Stability is reduced when external magnetic field flipping, Thermal disturbance, current disturbance or reading and writing are performed for many times, so that an Anti-ferromagnetic Layer (SyAF) superlattice is often used to pin the Reference Layer (RL). Various techniques are used by current manufacturers to achieve lattice matching of the antiferromagnetic layer and the reference layer, but "demagnetisation" is still a common occurrence.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a magnetic tunnel junction structure of a magnetic random access memory, which realizes reference layer pinning, lattice transformation, and reduction/avoidance of "desferrimagnetic coupling".
The purpose of the application and the technical problem to be solved are realized by adopting the following technical scheme.
According to the present application, a magnetic tunnel junction structure of a magnetic random access memory comprises, from top to bottom, a Free Layer (FL), a Barrier Layer (TBL), a Reference Layer (RL), a lattice conversion Layer (CTL), an antiferromagnetic Anti-ferromagnetic Layer (SyAF), and a Seed Layer (Seed Layer; SL), wherein the lattice conversion Layer comprises: a first conversion sublayer, i.e. a discontinuous barrier layer, formed of a material of low electronegativity, or an oxide thereof, or a nitride thereof, or an oxynitride thereof, with a thickness insufficient to form a continuous atomic layer; and a second conversion sublayer, namely a body-centered lattice promoting layer, disposed on the first conversion sublayer and formed of a transition metal having a body-centered crystal structure of high electronegativity; the magnetic tunnel junction comprises two crystal lattice conversion sub-layers for carrying out crystal lattice conversion and strong ferromagnetic coupling between the antiferromagnetic layer and the reference layer.
The technical problem solved by the application can be further realized by adopting the following technical measures.
In an embodiment of the present application, the material with low electronegativity of the first conversion sublayer is X, XY, XZ or XYZ, where X is one or a combination selected from calcium, scandium, yttrium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, aluminum, lanthanide rare earth elements, actinide rare earth elements; y is nitrogen, Z is oxygen, and the thickness of the first conversion sublayer is not greater than 0.15 nm.
In an embodiment of the present application, the material of the first conversion sublayer is one of tantalum, zirconium, hafnium and niobium, and the thickness of the first conversion sublayer is not greater than 0.10nm, and preferably between 0.05 and 0.08 nm.
In an embodiment of the present application, the material of the second conversion sublayer is one selected from tungsten, molybdenum, rhenium, technetium and chromium, and the thickness of the second conversion sublayer is between 0.1 nm and 0.5 nm.
In an embodiment of the present disclosure, a Capping Layer (CL) may be disposed on the free Layer, and the Capping Layer is a double-Layer structure selected from (one of mg, mg oxide, mgzn oxide, mgbo oxide, or mgma oxide)/(one of w, mo, mg, nb, ru, hf, v, cr, or pt), a triple-Layer structure of mg oxide/(one of w, mo, or hf)/ru, or a quadruple-Layer structure of mg oxide/pt/(one of w, mo, or hf)/ru.
In one embodiment of the present application, the material of the free layer is a single layer structure selected from cobalt boride, iron boride, cofeb, or a double-layer structure of cobalt ferrite/cobalt iron boron and iron/cobalt iron boron, or a three-layer structure of cobalt iron boron/(one of tantalum, tungsten, molybdenum or hafnium)/cobalt iron boron, cobalt iron boron/(one of tungsten, molybdenum or hafnium)/cobalt iron boron, or Fe/Co-Fe-B/(one of W, Mo or Hf)/Co-Fe-B, Co/Co-Fe-B/(one of W, Mo or Hf)/Co-Fe-B, Fe/Co-Fe-B/(one of W, Mo or Hf)/Co-Fe-B, or one of four-layer structures of cobalt ferrite/cobalt iron boron/(one of tungsten, molybdenum or hafnium)/cobalt iron boron, wherein the thickness of the free layer is between 1.2 nm and 3.0 nm.
In an embodiment of the present application, the material of the barrier layer is selected from one of magnesium oxide, magnesium zinc oxide, magnesium boron oxide, or magnesium aluminum oxide, and the thickness of the barrier layer is between 0.6 nm and 1.5 nm.
In an embodiment of the present application, the reference layer is made of a material selected from one or a combination of cobalt, iron, nickel, iron-cobalt alloy, cobalt boride, iron boride, cobalt-iron-boron alloy, cobalt-iron-carbon alloy and cobalt-iron-boron-carbon alloy, and the thickness of the reference layer is between 0.5nm and 2.0 nm.
In an embodiment of the present application, the antiferromagnetic layer of the magnetic tunnel junction is [ cobalt/(palladium, platinum or nickel) ]]nCobalt/(ruthenium, iridium or rhodium)/cobalt [ (palladium, platinum or nickel)/cobalt]mWherein n is not less than 1, m is not less than 0, and the thickness of the single layer of cobalt, palladium, platinum, nickel, ruthenium, iridium or rhodium is less than 1.0 nm.
In an embodiment of the present invention, the material of the seed layer of the magnetic tunnel junction is one or a combination of titanium, titanium nitride, tantalum nitride, tungsten nitride, ruthenium, palladium, chromium, oxygen, nitrogen, chromium cobaltate, chromium nickelate, cobalt boride, iron boride, cobalt iron boron, or a multilayer structure selected from cobalt iron boron/tantalum/platinum, tantalum/ruthenium, tantalum/platinum/ruthenium, cobalt iron boron/tantalum/platinum/ruthenium, or the like.
In one embodiment of the present application, an annealing process is performed on the magnetic tunnel junction to cause the reference layer and the free layer to transform from an amorphous structure to a body-centered cubic stacked crystal structure under the templating action of a face-centered cubic crystal structure barrier layer.
According to the magnetic tunnel junction unit structure with the two crystal lattice conversion layers, the lattice conversion and the strong ferromagnetic coupling between the antiferromagnetic layer with the face-centered cubic crystal structure and the body-centered cubic stacking reference layer can be realized through the magnetic tunnel junction unit structure with the multiple crystal lattice conversion layers, and the improvement of magnetism, electricity and yield of the magnetic tunnel junction unit and the reduction of devices are facilitated.
Drawings
FIG. 1 is a schematic diagram of a magnetic memory cell of an embodiment of the present application;
fig. 2 is a schematic view of a multi-layer switching layer structure of a lattice switching layer according to an embodiment of the present disclosure.
Description of the symbols
10, a bottom electrode; 20, magnetic tunnel junction; 21, a seed layer; 22 an antiferromagnetic layer; lattice conversion layer 23; 24 reference layer; 25, a barrier layer; 26, a free layer; 27: a cover layer; 30, a top electrode; 231 first conversion sublayer; 232 the second conversion sublayer;
Detailed Description
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. In the present invention, directional terms such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", etc. refer to directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention.
The drawings and description are to be regarded as illustrative in nature, and not as restrictive. In the drawings, elements having similar structures are denoted by the same reference numerals. In addition, the size and thickness of each component shown in the drawings are arbitrarily illustrated for understanding and ease of description, but the present invention is not limited thereto.
In the drawings, the range of configurations of devices, systems, components, circuits is exaggerated for clarity, understanding, and ease of description. It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present.
In addition, in the description, unless explicitly described to the contrary, the word "comprise" will be understood to mean that the recited components are included, but not to exclude any other components. Further, in the specification, "on.
To further illustrate the technical means and effects of the present invention for achieving the predetermined objects, the following detailed description is given to a magnetic tunnel junction structure of a magnetic random access memory according to the present invention with reference to the accompanying drawings and embodiments.
FIG. 1 is a diagram illustrating a magnetic memory cell structure of a magnetic random access memory according to an embodiment of the present invention. FIG. 2 is a schematic diagram of a two-layer lattice transition layer structure of a magnetic tunnel junction cell structure according to an embodiment of the present disclosure. The magnetic memory cell structure comprises a multi-layer structure formed by at least a bottom electrode 10, a magnetic tunnel junction 20 and a top electrode 30. The magnetic tunnel junction 20 includes, from top to bottom, a Free Layer (FL)26, a Barrier Layer (TBL) 25, a Reference Layer (RL) 24, a lattice Transfer Layer (CTL) 23, an antiferromagnetic Anti-ferromagnetic Layer (SyAF)22, and a Seed Layer (Seed Layer; BL)21 (which may also be a Buffer Layer, BL).
In an embodiment of the present application, the lattice conversion layers 23 are stacked in a multi-layer structure, and are respectively referred to as a first conversion sub-layer 231 and a second conversion sub-layer 232 from bottom to top.
In some embodiments, the first conversion sublayer 231, i.e., the discontinuous barrier layer, is formed of a material with low electronegativity, or an oxide thereof, or a nitride thereof, or an oxynitride thereof, and is not thick enough to form a continuous atomic layer; the second conversion sublayer 232, i.e., a body-centered lattice promoting layer, is disposed on the first conversion sublayer, and is formed of a transition metal having a high electronegativity and a body-centered crystal structure.
In some embodiments, the antiferromagnetic layer 22 is a face centered cubic crystal structure and is contiguous with the first conversion sublayer 231; the reference layer 24 has a body-centered cubic lattice structure and is connected to the second conversion sublayer 232.
In some embodiments, the magnetic tunnel junction 20 includes two lattice-switching sublayers that perform lattice switching and strong ferromagnetic coupling between the antiferromagnetic layer 22 and the reference layer 24 during a read or write operation of the magnetic random access memory cell.
In an embodiment of the present application, the material of the first conversion sublayer 232 is X, XY, XZ or XYZ, wherein X may be selected from magnesium (Mg), calcium (Ca), scandium (Sc), yttrium (Y), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), aluminum (Al), manganese (Mn), ruthenium (Ru), iridium (Ir), osmium (Os), zinc (Zn), gallium (Ga), indium (In), carbon (C), silicon (Si), germanium (Ge), tin (Sn), lanthanoid rare earth elements, actinoid rare earth elements, or a combination thereof, Y is nitrogen (N), Z is oxygen (O), and the thickness of the second conversion sublayer 232 is not greater than 0.15 nm.
In an embodiment of the present application, the material of the first conversion sublayer 231 is one of tantalum (Ta), zirconium (Zr), hafnium (Hf) and niobium (Nb), and the thickness of the first conversion sublayer 231 is not greater than 0.10nm, and preferably between 0.05 and 0.08 nm.
In an embodiment of the present application, the material of the second transition sublayer 232 may be selected from one of tungsten (W), molybdenum (Mo), rhenium (Re), technetium (Tc), and chromium (Cr), and the thickness of the second transition sublayer 232 is between 0.1 nm and 0.5 nm.
In an embodiment of the present application, the material of the seed layer 21 of the magnetic tunnel junction 20 is one or a combination of titanium, titanium nitride, tantalum nitride, tungsten nitride, ruthenium, palladium, chromium, oxygen, nitrogen, chromium cobalt, chromium nickel, cobalt boride, iron boride, cobalt iron boron, etc. In some embodiments, the seed layer 21 may be selected from one of cofeb/ta/pt, ta/ru, ta/pt/ru, cofeb/ta/pt/ru, etc. to optimize the crystal structure of the synthetic ferromagnetic layer (SyAF) 22.
In one embodiment of the present application, the antiferromagnetic layer 22 of the magnetic tunnel junction 20 is [ cobalt/(palladium, platinum or nickel) ]]nCobalt/(ruthenium, iridium or rhodium)/cobalt [ (palladium, platinum or nickel)/cobalt]mAnd the multilayer structure, wherein m is more than or equal to 0, and the thickness of the single layer of cobalt, palladium, platinum, nickel, ruthenium, iridium or rhodium is less than 1.0 nanometer. In some embodiments, the monolayer formed of any of cobalt, palladium, platinum, nickel, ruthenium, iridium, or rhodium may be below 0.5nm in thicknessSuch as: 0.10nm, 0.15nm, 0.20nm, 0.25nm, 0.30nm, 0.35nm, 0.40nm, 0.45nm or 0.50nm, etc., but not limited thereto, depending on the design requirements.
In an embodiment of the present application, the reference layer 24 of the magnetic tunnel junction 20 is made of one or a combination of cobalt, iron, nickel, iron-cobalt alloy, cobalt boride, iron boride, cobalt-iron-boron alloy, cobalt-iron-carbon alloy, and cobalt-iron-boron-carbon alloy, and has a thickness of 0.5nm to 2.0 nm.
In one embodiment of the present application, the material of the barrier layer 25 of the magnetic tunnel junction 20 is a non-magnetic metal oxide selected from one of magnesium oxide, magnesium zinc oxide, magnesium boron oxide or magnesium aluminum oxide, and the thickness thereof is between 0.6 nm and 1.5 nm.
In an embodiment of the present application, the free layer 26 of the magnetic tunnel junction has a variable magnetic polarization property, and the material of the free layer 26 is selected from a single-layer structure of cobalt boride, iron boride, cobalt iron boron, or the like, or a double-layer structure of cobalt boride/cobalt iron boron, iron/cobalt iron boron, or the like, or a three-layer structure of iron/cobalt iron boron/(tantalum, tungsten, molybdenum, or hafnium), or a four-layer structure of iron/cobalt iron boron/(tungsten, molybdenum, or hafnium), cobalt iron boron/(tungsten, molybdenum, or hafnium, or the like)/cobalt iron boron, or cobalt iron boron/(tungsten, molybdenum, or hafnium, or the like)/cobalt iron boron, the thickness is between 1.2 nm and 3.0 nm.
In an embodiment of the present application, a Capping Layer (CL) 27 may be disposed on the free Layer 26, and the material of the Capping Layer 27 is selected from (one of mg, mgo, mgzn, mgo, boria, or mgo — al)/(one of w, mo, mg, nb, ru, hf, v, cr, or pt) two-Layer structure, or a three-Layer structure of mgo/(one of w, mo, or hf)/ru, or a four-Layer structure of mgo/pt/(one of w, mo, or hf)/ru. In some embodiments, the selection of magnesium oxide (MgO) can provide a source of additional interfacial anisotropy for the Free Layer (FL)26, thereby increasing thermal stability.
In one embodiment of the present application, an annealing process is performed on the magnetic tunnel junction 20 at a temperature between 350 ℃ and 400 ℃ to cause the reference layer 24 and the free layer 26 to transform from an amorphous structure to a body-centered cubic stacked crystal structure under the templating action of the sodium chloride (NaCl) type face-centered cubic crystal structure barrier layer 25.
Another objective of the present invention is to provide a magnetic random access memory architecture, which includes a plurality of memory cells, each memory cell being disposed at a crossing of a bit line and a word line, each memory cell comprising: a magnetic tunnel junction 20 as any of the previously described; a bottom electrode located below the magnetic tunnel junction 20; and a top electrode located above the magnetic tunnel junction 20.
In one embodiment of the present application, the bottom electrode 10, the magnetic tunnel junction 20, and the top electrode 30 are all formed by a physical vapor deposition process.
In an embodiment of the present application, the material of the bottom electrode 10 is one or a combination of titanium, titanium nitride, tantalum nitride, ruthenium, tungsten nitride, and the like.
In an embodiment of the present application, the material of the top electrode 30 is one or a combination of titanium, titanium nitride, tantalum nitride, tungsten nitride, and the like.
In some embodiments, the bottom electrode 10 is planarized after deposition to achieve surface planarity for fabricating the magnetic tunnel junction 20.
In an embodiment of the present application, the first conversion sublayer 231 may be completed in a PVD deposition process chamber.
The first switching sublayer 231 mainly functions to interrupt the lattice growth of the antiferromagnetic layer 22, and the second switching sublayer 232 mainly functions to realize the lattice transition and the magnet coupling between the synthetic antiferromagnetic layer 22 and the reference layer 24. However, if the second switching sublayer 232 is deposited too thick, it will tend to cause "de-ferromagnetic coupling" between the antiferromagnetic layer 22 and the reference layer 24.
According to the magnetic tunnel junction unit structure with the two lattice conversion layers, lattice conversion and ferromagnetic coupling between an antiferromagnetic layer with a face-centered cubic crystal structure and a body-centered cubic stacking reference layer can be achieved through the magnetic tunnel junction unit structure with the two lattice conversion layers, and the improvement of magnetism, electricity and yield of a magnetic tunnel junction unit and the miniaturization of a device are facilitated.
The terms "in one embodiment of the present application" and "in various embodiments" are used repeatedly. This phrase generally does not refer to the same embodiment; it may also refer to the same embodiment. The terms "comprising," "having," and "including" are synonymous, unless the context dictates otherwise.
Although the present application has been described with reference to specific embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the application, and all changes, substitutions and alterations that fall within the spirit and scope of the application are to be understood as being covered by the following claims.
Claims (10)
1. A magnetic tunnel junction structure of a magnetic random access memory is arranged in a magnetic random access memory unit, the magnetic tunnel junction structure comprises a free layer, a barrier layer, a reference layer, a lattice conversion layer, an anti-ferromagnetic layer and a seed layer from top to bottom, and the lattice conversion layer comprises:
a first conversion sublayer, i.e. a discontinuous barrier layer, formed of a material of low electronegativity, or an oxide thereof, or a nitride thereof, or an oxynitride thereof, with a thickness insufficient to form a continuous atomic layer; and
a second conversion sublayer, namely a body-centered lattice promoting layer, disposed on the first conversion sublayer, formed of a transition metal having a high electronegativity and having a body-centered crystal structure;
the magnetic tunnel junction comprises two crystal lattice conversion sub-layers for carrying out crystal lattice conversion and strong ferromagnetic coupling between the antiferromagnetic layer and the reference layer.
2. The magnetic tunnel junction structure of magnetic random access memory of claim 1 wherein the material of low electronegativity of the first conversion sublayer is X, XY, XZ or XYZ, wherein X is one or a combination selected from the group consisting of magnesium, calcium, scandium, yttrium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, aluminum, manganese, ruthenium, iridium, osmium, zinc, gallium, indium, carbon, silicon, germanium, tin, lanthanide rare earth elements, actinide rare earth elements; y is nitrogen, Z is oxygen, and the thickness of the second conversion sublayer is not greater than 0.15 nm.
3. The mtj structure of claim 2, wherein the first switching sub-layer is made of one of ta, zr, hf and nb, and has a thickness of no greater than 0.10nm, preferably between 0.05 and 0.08 nm.
4. The mtj structure of claim 1, wherein the second switching sublayer is made of one of tungsten, molybdenum, rhenium, technetium, and chromium, and has a thickness of 0.1 nm to 0.5 nm.
5. The mtj structure of claim 1, wherein the free layer is formed with a capping layer, and the capping layer is formed of a double-layer structure of (mg, mg oxide, mgzn, mgbo or mgah)/(w, mo, mg, nb, ru, hf, v, cr or pt), a triple-layer structure of mg oxide/(w, mo or hf)/ru, or a quadruple-layer structure of mg oxide/pt/(w, mo or hf)/ru.
6. The magnetic tunnel junction structure of claim 1, wherein the material of the free layer is selected from a single layer structure of cobalt boride, iron boride, cobalt iron boron, or a bilayer structure of cobalt boride/cobalt iron boron, iron/cobalt iron boron, or a triple layer structure of cobalt iron boron/(tantalum, tungsten, molybdenum or hafnium)/cobalt iron boron, cobalt iron boron/(tungsten, molybdenum or hafnium)/cobalt iron boron, or a quadruple structure of iron/cobalt iron boron/(tungsten, molybdenum or hafnium)/cobalt iron boron, cobalt boride/cobalt iron boron/(tungsten, molybdenum or hafnium)/cobalt iron boron, iron/cobalt iron boron/(tungsten, molybdenum or hafnium)/cobalt iron boron, or cobalt boride/(tungsten, molybdenum or hafnium)/cobalt iron boron, the thickness of the free layer is between 1.2 nm and 3.0 nm.
7. The mtj structure of claim 1, wherein the barrier layer is made of one of magnesium oxide, magnesium zinc oxide, magnesium boron oxide, or magnesium aluminum oxide, and has a thickness of 0.6 nm to 1.5 nm.
8. The magnetic tunnel junction structure of claim 1 wherein the reference layer of the magnetic tunnel junction is made of a material selected from the group consisting of cobalt, iron, nickel, iron-cobalt alloy, cobalt boride, iron boride, cobalt-iron-boron alloy, cobalt-iron-carbon alloy, and cobalt-iron-boron-carbon alloy, or a combination thereof, and the thickness of the reference layer is between 0.5nm and 2.0 nm.
9. The MRAM magnetic memory cell structure of claim 1, wherein the antiferromagnetic layer of the magnetic tunnel junction is [ cobalt/(palladium, platinum or nickel) ]]nCobalt/(ruthenium, iridium or rhodium)/cobalt [ (palladium, platinum or nickel)/cobalt]mWherein n is not less than 1, m is not less than 0, and the thickness of the single layer of cobalt, palladium, platinum, nickel, ruthenium, iridium or rhodium is less than 1.0 nm.
10. The MRAM magnetic memory cell structure of claim 1, wherein the seed layer of the magnetic tunnel junction is made of a material selected from one or a combination of titanium, titanium nitride, tantalum nitride, tungsten nitride, ruthenium, palladium, chromium, oxygen, nitrogen, chromium cobalt, chromium nickel, cobalt boride, iron boride, CoFeB, or a multilayer structure selected from CoFeB/Ta/Pt, Ta/Ru, Ta/Pt/Ru, CoFeB/Ta/Pt/Ru.
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| CN108232003A (en) * | 2016-12-21 | 2018-06-29 | 上海磁宇信息科技有限公司 | A kind of vertical-type magnetoresistive element and its manufacturing method |
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| CN110010756A (en) * | 2017-12-05 | 2019-07-12 | 爱思开海力士有限公司 | Electronic equipment |
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