CN112289907A - Rapid and precise chip mass transfer process - Google Patents
Rapid and precise chip mass transfer process Download PDFInfo
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- CN112289907A CN112289907A CN202010950399.5A CN202010950399A CN112289907A CN 112289907 A CN112289907 A CN 112289907A CN 202010950399 A CN202010950399 A CN 202010950399A CN 112289907 A CN112289907 A CN 112289907A
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000012546 transfer Methods 0.000 title claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 43
- 239000000853 adhesive Substances 0.000 claims description 23
- 230000001070 adhesive effect Effects 0.000 claims description 23
- 238000003466 welding Methods 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 18
- 239000003292 glue Substances 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 238000003756 stirring Methods 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000354 decomposition reaction Methods 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000001179 sorption measurement Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 abstract description 5
- 239000003086 colorant Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000014509 gene expression Effects 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a rapid and precise chip mass transfer process, which utilizes different polarity materials to simultaneously joint LED chips with different colors, has simple joint mode and high accuracy, and does not need processes such as extra solder ball backflow and the like. In another embodiment, voltages are applied to different circuit structure positions at different time intervals, so that different time joints of the multiple red light chips, the multiple green light chips and the multiple blue light chips are realized respectively, convenience and rapidness are realized, and the cost is saved.
Description
Technical Field
The invention relates to the field of semiconductor device packaging and manufacturing, in particular to a rapid and precise chip mass transfer process.
Background
Micro LED is a new generation of revolutionary display technology, is LED Micro and matrixing technology, and the LED backlight source is subjected to thinning, Micro and arraying, has the size of less than 100 micrometers, can realize independent addressing of each pixel and independent driving luminescence (self luminescence) like OLED. The method is mainly applied to self-luminous display screens and micro-projection display screens. The LED self-luminous LED has the characteristics of small volume, light weight, low energy consumption, longer service life, high luminous efficiency, high brightness, high reliability, quick response time and the like, and has the characteristic of self-luminescence without a backlight source, so the LED self-luminous LED has huge development prospect. However, in practice, the LED unit has a great difficulty in handling, due to its small size.
At present, the size of a Micro LED chip is reduced to 10 micrometers or even 3-5 micrometers, the traditional suction nozzle picking and placing transfer mode is difficult to use, and a new process must be additionally constructed for mounting small chips with huge quantity and high precision requirements to meet production requirements. The new transfer processes on the market at present comprise the following steps: 1. research and development of electrostatic transfer: may cause electrical damage to the LED; 2. elastomer stamp transfer: an adhesive layer is required.
Disclosure of Invention
Based on solving the above problems, the present invention provides a fast and precise chip bulk transfer process, which sequentially comprises the following steps:
(1) providing a plurality of Micro LED chips, wherein the plurality of LED chips comprise a plurality of red light chips, green light chips and blue light chips;
(2) respectively coating or printing polar materials on the electrodes of the red light chip, the green light chip and the blue light chip;
(3) providing a welding circuit board, wherein the welding circuit board is provided with a circuit layer for welding the LED chips, and the circuit layer is provided with polar materials corresponding to the polar materials on the electrodes of the red light chips, the green light chips and the blue light chips;
(4) the red light chips, the green light chips and the blue light chips are uniformly dispersed in liquid or gas in the controllable stirring cabin body, the welding circuit board is arranged at the bottom of the cabin body, so that polar materials on the LED chip electrodes and polar materials on the circuit board are mutually adsorbed, and the red light chips, the green light chips, the blue light chips and the welding circuit board are orderly adsorbed.
Further, the polar material of the circuit layer is covered with conductive adhesive glue, and the conductive adhesive glue is formed by smearing conductive adhesive material.
Furthermore, through the mutual adsorption of different polarity materials, a plurality of red light chips, green light chips and blue light chips are respectively adsorbed on the circuit layer, and then the LED chips and the circuit board are relatively fixed through the conductive adhesive glue on the circuit layer, and the electric conduction is realized.
Further, the liquid is a volatile organic solvent, which does not affect the decomposition of polar materials, such as alcohol, acetone; the gas is an inert gas.
The invention also provides another rapid and precise chip mass transfer process, which sequentially comprises the following steps:
(1) providing a plurality of Micro LED chips, wherein the plurality of LED chips comprise a plurality of red light chips, green light chips and blue light chips;
(3) providing a welding circuit board, wherein the welding circuit board is provided with a circuit layer for welding the plurality of LED chips, and the circuit layer comprises a plurality of first circuit structures, second circuit structures and third circuit structures;
(4) uniformly dispersing a plurality of red light chips in liquid or gas in a controllable stirring cabin body, arranging the welding circuit board at the bottom of the cabin body, and applying voltage to a plurality of first circuit structures to enable electrodes of the plurality of red light chips and the first circuit structures on the circuit board to be mutually adsorbed, so that the plurality of red light chips and the circuit board are adsorbed;
(5) uniformly dispersing a plurality of green chips in liquid or gas in a controllable stirring cabin body, and applying voltage to a plurality of second circuit structures to enable electrodes of the green chips and the second circuit structures on the circuit board to be mutually adsorbed, so that the green chips and the circuit board are adsorbed;
(6) the blue light chips are uniformly dispersed in liquid or gas in the controllable stirring cabin body, voltage is applied to the third circuit structures, the electrodes of the blue light chips and the third circuit structures on the circuit board are mutually adsorbed, and then the blue light chips and the circuit board are adsorbed.
Further, the circuit layer is covered with conductive adhesive glue, and the conductive adhesive glue is formed by smearing conductive adhesive materials.
Furthermore, a plurality of red light chips, green light chips and blue light chips are respectively adsorbed on the circuit layer, and then the LED chips and the welding circuit board are relatively fixed through the conductive adhesive glue on the circuit layer, and electric conduction is realized.
Further, the liquid is a volatile organic solvent, which does not affect the decomposition of polar materials, such as alcohol, acetone; the gas is an inert gas.
The invention has the advantages that the LED chips with different colors are jointed simultaneously by using materials with different polarities, the jointing mode is simple, the accuracy is high, and processes such as extra solder ball backflow and the like are not needed. In another embodiment, voltages are applied to different circuit structure positions at different time intervals, so that different time joints of the multiple red light chips, the multiple green light chips and the multiple blue light chips are realized respectively, convenience and rapidness are realized, and the cost is saved.
Drawings
FIG. 1 is a schematic diagram of a red chip, a green chip, and a blue chip.
FIGS. 2-7 are schematic views illustrating the fabrication process of the chip bulk transfer process according to the first embodiment;
FIGS. 8-10 are schematic views illustrating the manufacturing process of the second embodiment of the chip bulk transfer process.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be described clearly and completely with reference to the drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
The above-described fast and precise chip bulk transfer process is described in detail below with reference to the accompanying drawings.
First embodiment
The backlight structure composed of Micro LED chips generally includes three RGB chips, as shown in fig. 1, including a red light chip, a green light chip, and a blue light chip, where the red light chip, the green light chip, and the blue light chip respectively include two electrodes, i.e., positive and negative electrodes.
The transfer process of the first embodiment can be seen in fig. 2-8, as follows:
first, referring to fig. 2, a plurality of Micro LED chips (hereinafter referred to as LED chips) are provided, the plurality of LED chips include a plurality of red light chips, green light chips, and blue light chips, and electrode materials of the red light chips, the green light chips, and the blue light chips are the same and may be materials such as copper, silver, and the like.
Referring to fig. 3, polar materials are respectively coated or printed on the electrodes of the plurality of red light chips, the plurality of green light chips and the plurality of blue light chips, wherein the positive and negative electrodes of the plurality of red light chips include a first polar material and a second polar material, the positive and negative electrodes of the plurality of green light chips include a third polar material and a fourth polar material, and the positive and negative electrodes of the plurality of blue light chips include a fifth polar material and a sixth polar material.
Referring to fig. 4, a solder wiring board is provided, the solder wiring board has a wiring layer for soldering the LED chips, the wiring layer has a polar material corresponding to the polar material on the electrodes of the red, green and blue chips, and the polar material of the wiring layer is covered with a conductive adhesive glue, which can be formed by smearing a conductive adhesive material. The multiple electrodes A1-, A2-, B1-, B2-, C1-and C2-on the circuit layer correspond to the multiple electrodes A1+, A2+, B1+, B2+, C1+ and C2+ of the chip one by one, and particularly refer to FIG. 5.
Referring to fig. 6, a plurality of LED chips are uniformly dispersed in a liquid or a gas in a controllable stirring chamber, wherein the liquid is a volatile organic solvent, which does not affect the decomposition of polar materials, such as alcohol and acetone; the gas is required to be an inert gas. The welding circuit board is arranged at the bottom of the cabin body, so that polar materials on the electrodes of the LED chips and polar materials on the circuit board are mutually adsorbed, and the chips and the circuit board are orderly adsorbed.
Finally, referring to fig. 7, the red light chips, the green light chips and the blue light chips are respectively adsorbed onto the circuit layer by the mutual adsorption of the materials with different polarities, and then the LED chips and the circuit board are relatively fixed by the conductive adhesive glue on the circuit layer, and the electrical conduction is realized. So far, the transfer of the plurality of LED chips is completed, and a circuit board structure with the plurality of LED chips is formed.
The embodiment utilizes different polarity materials to simultaneously joint the LED chips with different colors, has simple joint mode and high accuracy, and does not need processes such as extra solder ball backflow and the like.
Second embodiment
In this embodiment, it is not necessary to provide a polar material on the electrodes or on the circuit layer, but rather to apply different line layers with voltages at different time periods for time-shared transfer.
Specifically, the welding circuit board comprises a plurality of first circuit structures, second circuit structures and third circuit structures, wherein the first circuit structures, the second circuit structures and the third circuit structures are covered with conductive adhesive glue. Firstly, uniformly dispersing a plurality of red light chips in liquid or gas in a controllable stirring cabin body, wherein the liquid is required to be a volatile organic solvent and does not influence the decomposition of polar materials, such as alcohol and acetone; the gas is required to be an inert gas. The welding circuit board is arranged at the bottom of the cabin, voltage is applied to the first circuit structures, the electrodes of the red light chips and the first circuit structures on the circuit board are mutually adsorbed (adhered together through the conductive adhesive), and then the red light chips and the circuit board are adsorbed, and the figure 8 is shown.
Next, referring to fig. 9, the green chips are uniformly dispersed in the liquid or gas in the controllable stirring chamber, and a voltage is applied to the second line structures, so that the electrodes of the green chips and the second line structures on the circuit board are attracted to each other (bonded together by the conductive adhesive), and the green chips and the circuit board are attracted.
Finally, referring to fig. 10, the plurality of blue light chips are uniformly dispersed in the liquid or gas in the controllable stirring cabin, and a voltage is applied to the plurality of third circuit structures, so that the electrodes of the plurality of blue light chips and the third circuit structures on the circuit board are mutually adsorbed (adhered together by the conductive adhesive), and further the blue light chips and the circuit board are adsorbed.
This embodiment utilizes different periods, applys voltage in different circuit structure positions, realizes the not simultaneous joint of a plurality of ruddiness chips, a plurality of green glow chips and a plurality of blue light chips respectively, and convenient and fast saves the cost.
The expressions "exemplary embodiment," "example," and the like, as used herein, do not refer to the same embodiment, but are provided to emphasize different particular features. However, the above examples and exemplary embodiments do not preclude their implementation in combination with features of other examples. For example, even in a case where a description of a specific example is not provided in another example, unless otherwise stated or contrary to the description in the other example, the description may be understood as an explanation relating to the other example.
The terminology used in the present invention is for the purpose of illustrating examples only and is not intended to be limiting of the invention. Unless the context clearly dictates otherwise, singular expressions include plural expressions.
While example embodiments have been shown and described, it will be apparent to those skilled in the art that modifications and changes may be made without departing from the scope of the invention as defined by the claims.
Claims (8)
1. A rapid and precise chip mass transfer process sequentially comprises the following steps:
(1) providing a plurality of Micro LED chips, wherein the plurality of LED chips comprise a plurality of red light chips, green light chips and blue light chips;
(2) respectively coating or printing polar materials on the electrodes of the red light chip, the green light chip and the blue light chip;
(3) providing a welding circuit board, wherein the welding circuit board is provided with a circuit layer for welding the LED chips, and the circuit layer is provided with polar materials corresponding to the polar materials on the electrodes of the red light chips, the green light chips and the blue light chips;
(4) the red light chips, the green light chips and the blue light chips are uniformly dispersed in liquid or gas in the controllable stirring cabin body, the welding circuit board is arranged at the bottom of the cabin body, so that polar materials on the LED chip electrodes and polar materials on the circuit board are mutually adsorbed, and the red light chips, the green light chips, the blue light chips and the welding circuit board are orderly adsorbed.
2. The fast and precise chip bulk transfer process according to claim 1, wherein the polar material of the circuit layer is further covered with a conductive adhesive glue, and the conductive adhesive glue is formed by coating a conductive adhesive material.
3. The fast and precise chip bulk transfer process according to claim 2, wherein a plurality of red chips, green chips and blue chips are respectively adsorbed onto the circuit layer by the mutual adsorption of different polarity materials, and then the LED chips and the circuit board are relatively fixed by the conductive adhesive on the circuit layer, and are electrically conducted.
4. The fast and precise chip mass transfer process according to claim 1, wherein the liquid is a volatile organic solvent that does not affect the decomposition of polar materials, such as alcohol, acetone; the gas is an inert gas.
5. A rapid and precise chip mass transfer process sequentially comprises the following steps:
(1) providing a plurality of Micro LED chips, wherein the plurality of LED chips comprise a plurality of red light chips, green light chips and blue light chips;
(3) providing a welding circuit board, wherein the welding circuit board is provided with a circuit layer for welding the plurality of LED chips, and the circuit layer comprises a plurality of first circuit structures, second circuit structures and third circuit structures;
(4) uniformly dispersing a plurality of red light chips in liquid or gas in a controllable stirring cabin body, arranging the welding circuit board at the bottom of the cabin body, and applying voltage to a plurality of first circuit structures to enable electrodes of the plurality of red light chips and the first circuit structures on the circuit board to be mutually adsorbed, so that the plurality of red light chips and the circuit board are adsorbed;
(5) uniformly dispersing a plurality of green chips in liquid or gas in a controllable stirring cabin body, and applying voltage to a plurality of second circuit structures to enable electrodes of the green chips and the second circuit structures on the circuit board to be mutually adsorbed, so that the green chips and the circuit board are adsorbed;
(6) the blue light chips are uniformly dispersed in liquid or gas in the controllable stirring cabin body, voltage is applied to the third circuit structures, the electrodes of the blue light chips and the third circuit structures on the circuit board are mutually adsorbed, and then the blue light chips and the circuit board are adsorbed.
6. The fast and precise chip bulk transfer process according to claim 5, wherein the circuit layer is further covered with a conductive adhesive glue, and the conductive adhesive glue is formed by coating a conductive adhesive material.
7. The fast and precise chip mass transfer process according to claim 6, wherein a plurality of red chips, green chips and blue chips are respectively adsorbed onto the circuit layer, and then the plurality of LED chips and the soldering circuit board are relatively fixed and electrically conducted via the conductive adhesive on the circuit layer.
8. The fast and precise chip mass transfer process according to claim 5, wherein the liquid is a volatile organic solvent, which does not affect the decomposition of polar materials, such as alcohol, acetone; the gas is an inert gas.
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CN202010950399.5A CN112289907A (en) | 2020-09-11 | 2020-09-11 | Rapid and precise chip mass transfer process |
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CN202010950399.5A CN112289907A (en) | 2020-09-11 | 2020-09-11 | Rapid and precise chip mass transfer process |
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CN110061106A (en) * | 2019-04-24 | 2019-07-26 | 京东方科技集团股份有限公司 | Chip, target base plate, manufacturing method, chip transfer method and display device |
CN110767582A (en) * | 2019-11-06 | 2020-02-07 | 广东工业大学 | Transfer method of Micro-LED chip |
CN211088294U (en) * | 2019-10-21 | 2020-07-24 | 深圳市思坦科技有限公司 | L ED chip transfer substrate and system |
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2020
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US20180197899A1 (en) * | 2015-08-31 | 2018-07-12 | Samsung Display Co., Ltd. | Display apparatus and method of manufacturing the same |
CN107833954A (en) * | 2016-09-15 | 2018-03-23 | 伊乐视有限公司 | Display with surface mount light-emitting component |
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CN110061106A (en) * | 2019-04-24 | 2019-07-26 | 京东方科技集团股份有限公司 | Chip, target base plate, manufacturing method, chip transfer method and display device |
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