CN112284530A - Detection imaging sensor - Google Patents
Detection imaging sensor Download PDFInfo
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- CN112284530A CN112284530A CN202011394775.3A CN202011394775A CN112284530A CN 112284530 A CN112284530 A CN 112284530A CN 202011394775 A CN202011394775 A CN 202011394775A CN 112284530 A CN112284530 A CN 112284530A
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- layer
- substrate
- photosensitive
- imaging sensor
- detection imaging
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- 238000003384 imaging method Methods 0.000 title claims abstract description 32
- 238000001514 detection method Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 25
- 239000004973 liquid crystal related substance Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 8
- 238000005286 illumination Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention provides a detection imaging sensor, which relates to the field of detection imaging, and comprises: the optical medium layer is positioned between the first substrate and the second substrate; the first substrate comprises a glass substrate and an electrode layer which is positioned above the glass substrate and close to one side of the optical medium layer, and the second substrate comprises a reflecting layer and a photosensitive layer which is positioned above the reflecting layer and close to one side of the optical medium layer. The invention utilizes the photoresistor or capacitor formed by the photosensitive layer to control the loaded voltage or current to change, and realizes the non-visible light imaging through direct display.
Description
Technical Field
The invention belongs to the field of detection imaging, and particularly relates to a detection imaging sensor.
Background
The existing detector has a complex structure, needs to receive light (such as ultraviolet, infrared, terahertz, X-ray and the like) firstly, then converts the light into an electric signal, then scans and reads out the stored charges of each pixel through the processing of a control circuit, outputs a digital signal after signal amplification and A/D conversion, and transmits the digital signal to a computer for image processing so as to form a digital image. Such detectors do not lend themselves to imaging and signal processing requirements are high.
Disclosure of Invention
The invention provides a detection imaging sensor, aiming at realizing direct imaging display of an image by a detector under non-visible light.
The technical scheme of the invention is as follows:
the invention discloses a detection imaging sensor for non-visible light detection sensing, which comprises: the optical medium layer is positioned between the first substrate and the second substrate;
the first substrate comprises a glass substrate and an electrode layer which is positioned above the glass substrate and close to one side of the optical medium layer, and the second substrate comprises a reflecting layer and a photosensitive layer which is positioned above the reflecting layer and close to one side of the optical medium layer.
Preferably, the optical medium layer is a liquid crystal layer or a luminescent material layer.
Preferably, a plurality of pixel units are included in the detection imaging sensor, the photosensitive layer is composed of a plurality of photosensitive units, and each photosensitive unit corresponds to a pixel unit one by one.
Preferably, a voltage is applied to both ends of a pixel constituted by a plurality of pixel units.
Preferably, the voltage varies in the range of 2-20V.
Preferably, the photosensitive layer manufacturing material is an ultraviolet photosensitive material or an infrared photosensitive material.
Preferably, the electrode layer is made of ITO, and the reflective layer is made of ITO or reflective metal.
The invention can bring at least one of the following beneficial effects:
1. the invention can realize non-visible light imaging through direct display;
2. the invention can utilize the photoresistor or the capacitor formed by the photosensitive layer to control the loaded voltage or current to change;
3. the imaging application technology of the invention is diversified, and comprises an active luminous display technology or a passive luminous display technology, a flexible display technology and other display technologies.
Drawings
The present invention will be further described in the following detailed description of preferred embodiments, which is to be read in connection with the accompanying drawings.
Fig. 1 is a schematic diagram of a first embodiment of the present invention.
FIG. 2 is a schematic diagram of a second embodiment of the present invention.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description will be made with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
For the sake of simplicity, the drawings only schematically show the parts relevant to the present invention, and they do not represent the actual structure as a product. In addition, in order to make the drawings concise and understandable, components having the same structure or function in some of the drawings are only schematically illustrated or only labeled. In this document, "one" means not only "only one" but also a case of "more than one".
The invention provides a detection imaging sensor for non-visible light detection sensing, which comprises: the optical device comprises a first substrate 10 and a second substrate 20 which are arranged in parallel and oppositely, and an optical medium layer positioned between the first substrate 10 and the second substrate 20; the first substrate 10 includes a glass substrate 11 and an electrode layer 12 located above the glass substrate 11 and near one side of the optical medium layer, and the second substrate 20 includes a reflective layer 21 and a photosensitive layer 22 located above the reflective layer 21 and near one side of the optical medium layer.
The optical medium layer may be a liquid crystal layer 31 or a light emitting material layer 32.
The technical solution of the present invention is described in detail with specific examples below.
In a first embodiment, as shown in fig. 1, a sensor for detecting imaging includes: a first substrate 10 and a second substrate 20 disposed in parallel and opposite to each other and a liquid crystal layer 31 between the first substrate 10 and the second substrate 20; the first substrate 10 includes a glass substrate 11 and an electrode layer 12 located above the glass substrate 11 and near the liquid crystal layer 31, and the second substrate 20 includes a reflective layer 21 and a photosensitive layer 22 located above the reflective layer 21 and near the liquid crystal layer 31.
In a second embodiment, as shown in fig. 2, a detection imaging sensor includes: a first substrate 10 and a second substrate 20 disposed in parallel and opposite to each other and a light emitting material layer 32 between the first substrate 10 and the second substrate 20; the first substrate 10 includes a glass substrate 11 and an electrode layer 12 located above the glass substrate 11 and near the light emitting material layer 32, and the second substrate 20 includes a reflective layer 21 and a photosensitive layer 22 located above the reflective layer 21 and near the light emitting material layer 32. The light emitting material layer 32 may be an organic light emitting material or an inorganic light emitting material.
Specifically, the detection imaging sensor includes a plurality of pixel units (not shown), and the photosensitive layer 22 is composed of a plurality of photosensitive units, and each photosensitive unit corresponds to a pixel unit. In addition, a voltage is applied to both ends of a pixel constituted by a plurality of pixel units.
The detection imaging sensor of the present invention utilizes the principle of photosensitivity of the photosensitive layer 22 to perform detection sensing imaging using non-visible light. According to the invention, voltage is applied to two ends of the pixel of the sensor, because a thicker photosensitive layer 22 medium is arranged on one side of the second substrate 20 of the sensor, the photosensitive layer 22 medium receiving non-visible light can correspond to a specific wavelength one by one, the photosensitive layer 22 forms a photosensitive resistor or capacitor, and the voltage or current at two ends of the pixel unit is indirectly controlled through photosensitive change of the photosensitive layer 22, so that the display of an image is realized.
It should be noted that the photoresistor formed by the photosensitive layer 22 is very sensitive to light, and in the absence of light, it is in a high-resistance state, and the dark resistance can reach 1.5M Ω generally. When illumination is available, free electrons and holes are excited in the material, the resistance value is reduced, the resistance value is rapidly reduced along with the increase of illumination intensity, and the resistance value can be reduced to be less than 1K omega.
So when there is no non-visible light, the sensor will not display an image because no voltage or current can be applied to the pixel because the photosensitive layer 22 is an insulator when there is no illumination of a particular wavelength.
When non-visible light is received, the capacitance or resistance of the photosensitive layer 22 is changed in a photosensitive manner, so that voltage can be directly applied to a voltage-controllable material (such as a liquid crystal material) or current can be applied to a light-emitting material (such as quantum dots, organic light-emitting small molecules, and the like), thereby realizing visible light change or light-emitting imaging, and directly displaying an image.
For both embodiments, the voltage variation of the resulting sensor is in the range of 2-20V, taking into account the material used for the photosensitive layer 22.
Preferably, the material for manufacturing the electrode layer 12 may be ITO, and the material for manufacturing the reflective layer 21 may be ITO or a reflective metal.
Preferably, the photosensitive layer 22 can be made of an ultraviolet photosensitive resistor, which is sensitive to ultraviolet light and includes photosensitive materials such as cadmium sulfide and cadmium selenide for detecting ultraviolet light. The photosensitive layer 22 may also be made of an infrared photosensitive resistor, which mainly includes photosensitive materials such as lead sulfide, lead telluride, lead selenide, indium antimonide, and the like, or additionally includes materials such as perovskite, metal halide, and the like.
The imaging of the detection imaging sensor can be realized by the existing active light emitting display or passive light emitting display technologies such as LCD, OLED, quantum dots and the like, and can also be realized by other future display technologies including flexible display technologies and the like.
The detection imaging sensor of the invention utilizes the photosensitive layer to form a photoresistor or a capacitor, uses non-visible light to carry out detection sensing imaging, and indirectly controls the loaded voltage or current through photosensitive change of the light sensitivity of the photosensitive layer, thereby realizing the non-visible light imaging.
It should be noted that the above mentioned embodiments are only preferred embodiments of the present invention, but the present invention is not limited to the details of the above embodiments, and it should be noted that, for those skilled in the art, it is possible to make various modifications and amendments within the technical concept of the present invention without departing from the principle of the present invention, and various modifications, amendments and equivalents of the technical solution of the present invention should be regarded as the protection scope of the present invention.
Claims (7)
1. A detection imaging sensor for non-visible light detection sensing, comprising: the optical medium layer is positioned between the first substrate and the second substrate; the first substrate comprises a glass substrate and an electrode layer which is positioned above the glass substrate and close to one side of the optical medium layer, and the second substrate comprises a reflecting layer and a photosensitive layer which is positioned above the reflecting layer and close to one side of the optical medium layer.
2. The sensor of claim 1, wherein the optical medium layer is a liquid crystal layer or a light emitting material layer.
3. The detection imaging sensor of claim 1, wherein the detection imaging sensor comprises a plurality of pixel units, the photosensitive layer comprises a plurality of photosensitive units, and each photosensitive unit corresponds to one pixel unit.
4. The detection imaging sensor of claim 3, wherein a voltage is applied across a pixel comprised of a plurality of pixel cells.
5. The detection imaging sensor of claim 4, wherein the voltage varies in a range of 2-20V.
6. The detection imaging sensor of claim 1, wherein the photosensitive layer fabrication material is an ultraviolet photosensitive material or an infrared photosensitive material.
7. The sensor of claim 1, wherein the electrode layer is made of ITO and the reflective layer is made of ITO or a reflective metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011394775.3A CN112284530A (en) | 2020-12-03 | 2020-12-03 | Detection imaging sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011394775.3A CN112284530A (en) | 2020-12-03 | 2020-12-03 | Detection imaging sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112284530A true CN112284530A (en) | 2021-01-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011394775.3A Pending CN112284530A (en) | 2020-12-03 | 2020-12-03 | Detection imaging sensor |
Country Status (1)
| Country | Link |
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| CN (1) | CN112284530A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070029482A1 (en) * | 2005-08-05 | 2007-02-08 | Philips Laou | Infrared imager |
| US7381953B1 (en) * | 2003-07-25 | 2008-06-03 | Public Service Solutions, Inc. | Infrared imaging device |
| CN101558348A (en) * | 2006-09-29 | 2009-10-14 | 佛罗里达大学研究基金公司 | Method and apparatus for infrared detection and display |
| US20170280067A1 (en) * | 2016-03-28 | 2017-09-28 | Charles Mingus, III | Nano-Imaging Device and Systems and Methods for Implementing and Using Same |
| CN110867496A (en) * | 2019-11-15 | 2020-03-06 | 北京科易达知识产权服务有限公司 | Infrared visualization device |
-
2020
- 2020-12-03 CN CN202011394775.3A patent/CN112284530A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7381953B1 (en) * | 2003-07-25 | 2008-06-03 | Public Service Solutions, Inc. | Infrared imaging device |
| US20070029482A1 (en) * | 2005-08-05 | 2007-02-08 | Philips Laou | Infrared imager |
| CN101558348A (en) * | 2006-09-29 | 2009-10-14 | 佛罗里达大学研究基金公司 | Method and apparatus for infrared detection and display |
| US20170280067A1 (en) * | 2016-03-28 | 2017-09-28 | Charles Mingus, III | Nano-Imaging Device and Systems and Methods for Implementing and Using Same |
| CN110867496A (en) * | 2019-11-15 | 2020-03-06 | 北京科易达知识产权服务有限公司 | Infrared visualization device |
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| CB02 | Change of applicant information |
Address after: 2-67, No. 5, Qijing 1st Road, Longshan street, Wuhu Economic and Technological Development Zone, Wuhu City, Anhui Province Applicant after: Wuhu ditifei Photoelectric Technology Co.,Ltd. Address before: 210033 room 221, No.3 Hengda Road, Nanjing Economic Development Zone, Jiangsu Province Applicant before: NANJING DIFEITAI PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |
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| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20210129 |