CN112281209A - Method, system and storage medium for detecting melt leakage - Google Patents
Method, system and storage medium for detecting melt leakage Download PDFInfo
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- CN112281209A CN112281209A CN202011182638.3A CN202011182638A CN112281209A CN 112281209 A CN112281209 A CN 112281209A CN 202011182638 A CN202011182638 A CN 202011182638A CN 112281209 A CN112281209 A CN 112281209A
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000000155 melt Substances 0.000 claims abstract description 122
- 239000013078 crystal Substances 0.000 claims abstract description 69
- 239000010453 quartz Substances 0.000 claims abstract description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 238000001514 detection method Methods 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 23
- 239000007788 liquid Substances 0.000 claims description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 230000004044 response Effects 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000246 remedial effect Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000001960 triggered effect Effects 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000011895 specific detection Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000002231 Czochralski process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The embodiment of the invention discloses a method, a system and a storage medium for detecting melt leakage; the method can comprise the following steps: detecting state parameters of a detection target for detecting melt leakage in a crystal pulling furnace in the process of producing the silicon single crystal rod; when the detected state parameter changes, judging the change characteristic of the state parameter; and determining that the melt in the quartz crucible in the crystal pulling furnace leaks corresponding to the change characteristics meeting the set judgment criteria.
Description
Technical Field
The embodiment of the invention relates to the technical field of monocrystalline silicon production, in particular to a method and a system for detecting melt leakage and a storage medium.
Background
Currently, the Czochralski (Czochralski) process, otherwise known as the Czochralski process, is widely used to produce single crystal silicon. During the process of manufacturing the monocrystalline silicon by implementing the method, a phenomenon that the quartz crucible is cracked is easily caused in some stages, for example, in the stage of melting polycrystalline silicon, the polycrystalline silicon is easily subjected to a phenomenon that the polycrystalline silicon is inclined and collapsed due to downward sinking along with melting of silicon materials, and the phenomenon can impact the quartz crucible to cause the quartz crucible to be cracked; for example, during the growth of the silicon rod, the silicon rod may shake due to control error, and then fall, or the silicon rod may fall due to icing (i.e., thinning and solidifying) on the surface of the melt, and the falling silicon rod may impact the quartz crucible, and then crack the quartz crucible.
After the quartz crucible cracks, the melt in the crucible leaks outwards through the cracks, and further the bottom, the heat insulation material, the exhaust port pipeline and the mechanical control or control part of the quartz crucible in the crystal pulling furnace equipment are seriously damaged. Based on this, there is a need to detect melt leakage during the manufacture of single crystal silicon in order to perform remedial measures in a timely manner.
Disclosure of Invention
In view of the above, embodiments of the present invention are directed to a method, system, and storage medium for detecting melt leakage; the melt leakage state in the quartz crucible can be detected in the process of manufacturing the monocrystalline silicon, so that the leakage phenomenon can be found in time for remedial treatment.
The technical scheme of the embodiment of the invention is realized as follows:
in a first aspect, embodiments of the present invention provide a method for detecting melt leakage, the method including:
detecting state parameters of a detection target for detecting melt leakage in a crystal pulling furnace in the process of producing the silicon single crystal rod; wherein the state parameter of the target can be used for representing whether a melt leakage phenomenon occurs or not;
when the detected state parameter changes, judging the change characteristic of the state parameter;
and determining that the melt in the quartz crucible in the crystal pulling furnace leaks corresponding to the change characteristics meeting the set judgment criteria.
In a second aspect, embodiments of the present invention provide a system for detecting melt leakage, the system comprising: a detection section, a judgment section, and a determination section; wherein the content of the first and second substances,
the detection part is configured to detect state parameters of a detection target for detecting melt leakage in the crystal pulling furnace in the process of producing the silicon single crystal rod; wherein the state parameter of the target can be used for representing whether a melt leakage phenomenon occurs or not;
the judging part is configured to judge the change characteristics of the state parameters when the detected state parameters are changed;
the determination part is configured to determine that the melt in the quartz crucible in the crystal pulling furnace leaks in response to the variation characteristics satisfying a set judgment criterion.
In a third aspect, an embodiment of the present invention provides a computer storage medium, where a program for detecting a melt leakage is stored, and when the program is executed by at least one processor, the method for detecting a melt leakage according to the first aspect is implemented.
The embodiment of the invention provides a method, a system and a storage medium for detecting melt leakage; selecting a specific detection target in the crystal pulling furnace, and monitoring the state parameters of the target; and then determining whether the melt has leakage phenomenon according to the set judgment criterion according to the change characteristic of the state parameter. The method can simply and conveniently detect the melt leakage phenomenon in the quartz crucible so as to find the leakage phenomenon in time and carry out remedial treatment.
Drawings
FIG. 1 is a schematic view of a crystal pulling furnace according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of a method for detecting melt leakage according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an observation reference object according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a system for detecting melt leakage according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a system for detecting melt leakage according to an embodiment of the present invention;
fig. 6 is a ladder diagram of a Programmable Logic Controller (PLC) according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to FIG. 1, which shows a schematic structural view of a crystal pulling furnace 1 currently used for manufacturing single crystal silicon by the Czochralski method, in the crystal pulling furnace 1 shown in FIG. 1, at least: the furnace body 10, the guide cylinder 11, the quartz crucible 12 for holding the polysilicon raw material, and the mechanical component 13 for driving the quartz crucible 12 to move and rotate, and further, the furnace body may further include a heater 14 for heating the polysilicon raw material to form the melt 2, a bottom heat insulating material 15 disposed at the bottom end of the furnace body 10, and an exhaust port pipe 16, wherein the exhaust direction of the exhaust port pipe 16 is shown by an arrow in fig. 1; it should be noted that the structure of the single crystal furnace 1 shown in fig. 1 is not particularly limited, and other parts of the crystal pulling furnace 1, such as a central heat insulating material shown as a cross-fill block around the heater 14, are not marked for clarity of explanation of the embodiments of the present invention and are therefore omitted.
The process for producing single crystal silicon by the crystal pulling furnace 1 shown in FIG. 1 may include charging a polycrystalline silicon feedstock through a draft tube 11 within a quartz crucible 12; the polycrystalline silicon raw material 2 in the quartz crucible 12 is then heated by the heater 14 to melt the polycrystalline silicon raw material to form a melt; when the temperature of the melt 2 is stable, the silicon single crystal silicon rod grows in a mode that the seed crystal is contacted with the melt. In the above process, during the melting of the polycrystalline silicon raw material, the polycrystalline silicon raw material may be sagged downward along with the melting to generate a side-tipping collapse phenomenon, and at this time, the collapsed polycrystalline silicon raw material may impact the quartz crucible 12, thereby generating cracks at the bottom of the quartz crucible 12; in addition, during the process of growing the silicon single crystal rod, if the silicon single crystal rod is shaken violently due to external reasons such as careless operation, or icing phenomenon of thinning and solidifying occurs on the surface of the melt, the silicon single crystal rod may fall, so that impact is applied to the quartz crucible 12 to generate cracks, and the cracks finally cause the melt 2 in the quartz crucible 12 to leak and flow out of the quartz crucible as shown in fig. 1. The leaked high-temperature melt can cause serious damage to the components in the crystal pulling furnace 1, such as the bottom end of the furnace body 10, the bottom insulation 15 and the exhaust port pipes 16, which are located below the quartz crucible 12 in fig. 1.
Due to the high melt temperature, the bottom of the quartz crucible 12 and the melt 2 itself cannot be directly tested to see if cracks or melt leakage occur. Accordingly, embodiments of the present invention contemplate characterizing whether the quartz crucible 12 is cracked or whether the melt is leaking based on the detected state parameters of certain targets within the crystal pulling furnace for ease of detection by detecting the state of those targets.
Based on the above explanation, referring to fig. 2, a method for detecting melt leakage according to an embodiment of the present invention is shown, which can be applied to the crystal pulling furnace 1 shown in fig. 1, and which may include:
s21: detecting state parameters of a detection target for detecting melt leakage in a crystal pulling furnace in the process of producing the silicon single crystal rod;
wherein the state parameter of the target can be used for representing whether a melt leakage phenomenon occurs or not;
s22: when the detected state parameter changes, judging the change characteristic of the state parameter;
s23: and determining that the melt in the quartz crucible in the crystal pulling furnace leaks corresponding to the change characteristics meeting the set judgment criteria.
Through the technical scheme shown in FIG. 2, the embodiment of the invention selects a specific detection target in the crystal pulling furnace and monitors the state parameter of the target; and then determining whether the melt has leakage phenomenon according to the set judgment criterion according to the change characteristic of the state parameter. The method can simply and conveniently detect the melt leakage phenomenon in the quartz crucible so as to find the leakage phenomenon in time and carry out remedial treatment.
In the embodiment shown in FIG. 2, the melt leakage can be determined by detecting the temperature of the target part in the crystal pulling furnace 1, in which case the target can be a specific part of the crystal pulling furnace 1 and the temperature state of the part can be easily detected. In some possible implementations, the detecting the state parameter of the detection target for detecting the melt leakage in the crystal pulling furnace includes:
and detecting the temperature of a connecting part between the furnace body and the exhaust port pipeline in the crystal pulling furnace.
Based on the foregoing implementation manner, in some examples, the determining, when the detected state parameter changes, a change characteristic of the state parameter includes:
and when the temperature of the connecting part changes, acquiring the temperature change rate according to a set time interval.
Based on the above example, preferably, the determining that the melt in the quartz crucible in the crystal pulling furnace leaks in response to the variation characteristic satisfying a set determination criterion includes:
when the temperature change rate of the connecting part in the time interval is larger than a set change rate threshold value, determining that the melt in the quartz crucible leaks, and the melt leakage amount is in a first level;
when the temperature change rate of the connecting part in the time interval is smaller than a set change rate threshold value, determining that the melt in the quartz crucible leaks, and the melt leakage amount is in a second level; wherein the melt leakage characterized by the first grade is greater than the melt leakage characterized by the second grade.
With respect to the above implementation and the examples thereof, it should be noted that when the melt 2 leaks from the quartz crucible 12, the leaked melt flows out along the bottom crack of the quartz crucible 12 and drops downward, at this time, the high temperature melt 2 rapidly raises the ambient temperature of the components (such as the bottom heat insulating material 15 and the exhaust port pipe 16 at the bottom end of the furnace body 10) below the quartz crucible 12 in the crystal pulling furnace 1, while most of the exhaust port pipe 16 is located outside the furnace body 10, and the ambient temperature is far lower than the temperature in the furnace body 10 during the silicon rod production process, which is suitable for setting the detection device. Therefore, the embodiment of the present invention may provide a temperature sensor for the connection portion between the furnace body 10 and the exhaust port duct 16 to detect the temperature of the connection portion and acquire the temperature change rate.
It is understood that when no crack occurs at the bottom of the quartz crucible 12 or no melt leakage occurs, the temperature of the connection portion is the temperature at which the polycrystalline silicon raw material is heated and melted by the heater 14, and although the temperature of the connection portion is higher, the temperature is relatively stable, that is, the temperature of the connection portion does not change or changes relatively gently so as to ignore the temperature change under normal conditions. However, when a crack occurs at the bottom of the quartz crucible 12 or a melt leakage phenomenon occurs, the melt may drop down to the bottom of the furnace body 10 along the crack and also drop at the connection portion to cause a rapid temperature rise of the connection portion, that is, the temperature change of the connection portion may be rapid and the temperature change rate is rapid; if this occurs, it is considered that the solution leaks and drops at the connection portion.
In addition, for the leaked melt, the leakage amount can be characterized by the temperature change rate, for example, when the leakage amount of the melt is more, the temperature rise of the connecting part is more rapid; the temperature rise of the connecting part is gentler as the melt leakage amount is smaller, and the sharp or gentle degree can be described by the temperature change rate, namely, the temperature rise is steeper as the temperature change rate is larger, and the temperature rise is gentler as the temperature change rate is smaller. Based on this, embodiments of the present invention may set a rate of change threshold to distinguish between sharp and flat. For the threshold, if the temperature change rate of the connecting part is greater than the change rate threshold within a certain time interval, the melt leakage phenomenon can be determined to occur, and the melt leakage amount is large; if the temperature change rate of the connecting part is smaller than the change rate threshold value within a certain time interval, the melt leakage phenomenon can be determined to occur, but the melt leakage amount is less; for the more and less amount of the melt leakage, the embodiment of the present invention divides the first grade and the second grade, that is, the first grade represents more amount of the melt leakage, and the second grade represents less amount of the melt leakage.
The melt leakage phenomenon can be realized by detecting the relevant state of the melt 2 in the crystal pulling furnace 1, and the liquid level of the melt 2 is a conveniently detectable state parameter, besides the temperature detection of the target part in the crystal pulling furnace 1 described in the above implementation mode and the examples thereof. Based on the above, in some possible implementation manners, the state parameter of the detection target for detecting the melt leakage in the crystal pulling furnace is detected; the method comprises the following steps:
arranging an observation reference object at the lower end of a guide cylinder in the crystal pulling furnace;
and detecting the distance between the observation reference object and the melt liquid level.
For the above implementation, in some examples, when the detected state parameter changes, determining a change characteristic of the state parameter includes:
and when the distance between the observation reference object and the melt liquid level changes, acquiring the distance change rate according to a set time interval.
For the above example, preferably, determining that the melt in the quartz crucible in the crystal pulling furnace leaks in response to the variation characteristic satisfying a set determination criterion includes:
and when the distance change rate is not in a stable state, determining that the melt in the quartz crucible in the crystal pulling furnace leaks.
For the above implementation and its example, it should be noted that, due to the high temperature of the melt, when measuring the liquid level, a observing reference object is usually disposed above the liquid level, for example, as shown in fig. 1, an "L" shaped quartz rod is disposed below the guide shell 11 or below the upper heat insulating material above the melt 2 in the crystal pulling furnace 1, as shown in fig. 3, wherein the observing end of the quartz rod is lower than the lowest point of the guide shell 11 or the upper heat insulating material, and the observing end forms a reflection on the melt level, and in some embodiments, the distance between the observing reference object and the melt level can be characterized by detecting the distance between the observing end and the reflection, so as to describe the height of the melt level. During the silicon rod growth process, the seed crystal is normally pulled at a substantially constant speed, which can be regarded as a uniform pulling, so that the melt level always drops during the growth process, but the dropping speed is also approximately constant, i.e., the change in the distance between the reference and the melt level is observed to be stable. However, when a crack occurs at the bottom of the quartz crucible 12 or a melt leakage phenomenon occurs, the melt may drop down to the bottom of the furnace body 10 along the crack, and the height drop speed of the melt level may not be constant due to the drop, so that the change of the distance between the observation reference and the melt level may be unstable, and therefore, whether the melt leakage phenomenon occurs or not may be known by detecting whether the change rate of the distance between the observation reference and the melt level is stable or not.
Based on the above technical solution, after determining that the melt in the quartz crucible in the crystal pulling furnace leaks, the melt needs to be processed in time, and based on this, the method may further include: and opening a liquid nitrogen valve to discharge liquid nitrogen from the outlet of the exhaust pipe to the direction of the quartz crucible so as to reduce equipment damage caused by melt leakage by cooling the leaked melt. It is understood that the melt is rapidly cooled by discharging liquid nitrogen, and the leakage melt of high temperature is prevented from invading the components below the quartz crucible 12 to cause damage or breakage of the equipment.
Based on the same inventive concept of the foregoing technical solution, referring to fig. 4, a system 40 for detecting melt leakage according to an embodiment of the present invention is shown, where the system 40 may be applied in a crystal pulling furnace, such as the crystal pulling furnace 1 shown in fig. 1, and the system 40 may include: a detection section 401, a judgment section 402, and a determination section 403; wherein the content of the first and second substances,
the detection part 401 is configured to detect a state parameter of a detection target for detecting melt leakage in the pulling crystal furnace in the process of producing the silicon single crystal rod; wherein the state parameter of the target can be used for representing whether a melt leakage phenomenon occurs or not;
the judging part 402, configured to judge the change characteristics of the state parameter when the detected state parameter changes;
the determination section 403 is configured to determine that a leakage phenomenon of the melt in the quartz crucible in the crystal pulling furnace occurs, in response to the variation characteristics satisfying a set determination criterion.
Based on the above technical solution and the system 40 shown in fig. 4, whether the melt leakage phenomenon occurs can be determined by detecting the temperature of the target part in the crystal pulling furnace 1. Based on this, as shown in fig. 5, the detection section 401 includes a temperature sensor provided at a connection portion between the furnace body 10 and the exhaust port duct 16, and detects the temperature of the connection portion in the crystal pulling furnace. The determining part and the determining part 403 may be implemented by a control device capable of performing signal processing and transmitting instructions, such as: wireless devices, mobile or cellular phones (including so-called smart phones), Personal Digital Assistants (PDAs), consoles, computers, upper computers, etc., which may be connected to a temperature sensor.
Specifically, the judging section 402 is configured to:
and when the temperature of the connecting part changes, acquiring the temperature change rate according to a set time interval.
Specifically, the determining section 403 is configured to:
when the temperature change rate of the connecting part in the time interval is larger than a set change rate threshold value, determining that the melt in the quartz crucible leaks, and the melt leakage amount is in a first level;
when the temperature change rate of the connecting part in the time interval is smaller than a set change rate threshold value, determining that the melt in the quartz crucible leaks, and the melt leakage amount is in a second level; wherein the melt leakage characterized by the first grade is greater than the melt leakage characterized by the second grade.
It can be understood that the control device can prompt according to the grade of the leakage amount of the solution, as shown in fig. 5, the control device can be connected with an alarm, the alarm can comprise three indicating lamps, green, yellow and red, which are respectively represented by a white round frame, a gray round frame and a black round frame in fig. 5. When the control device determines that the melt leakage phenomenon does not occur, a green indicator light in the alarm is triggered to be on; when the control device determines that the melt leakage phenomenon occurs but the melt leakage amount is in a second level, a yellow indicator lamp in the alarm is triggered to be on; when the control device determines that the melt leakage phenomenon occurs but the melt leakage amount is in a first level, a red indicator lamp in the alarm is triggered to be on;
based on the above technical solution and the system 40 shown in FIG. 4, the level of the melt 2 in the crystal pulling furnace 1 can be detected, and based on this, the detecting part 401 can comprise a observing reference object arranged above the melt level, specifically, an L-shaped quartz rod is arranged below the guide shell 11 as shown in FIG. 1 or below the upper heat-insulating material arranged above the melt 2 in the crystal pulling furnace 1 as shown in FIG. 3, wherein the observing end of the quartz rod is lower than the lowest point of the guide shell 11 or the upper heat-insulating material, and the observing end forms a reflection image on the melt level; in addition, the detection part 401 may further include a CCD camera disposed outside the furnace body 10 as shown in fig. 1, and detect the distance between the observation reference and the melt level through an observation window disposed at the upper portion of the furnace body 10. The determining part and the determining part 403 may be implemented by a control device capable of performing signal processing and transmitting instructions, such as: wireless devices, mobile or cellular phones (including so-called smart phones), Personal Digital Assistants (PDAs), consoles, computers, host computers, etc., similar to the ones described above, the control device may be connected to a CCD camera, as indicated by the dashed lines in fig. 5.
Specifically, the judging section 402 is configured to:
and when the distance between the observation reference object and the melt liquid level changes, acquiring the distance change rate according to a set time interval.
Specifically, the determining section 403 is configured to:
and when the distance change rate is not in a stable state, determining that the melt in the quartz crucible in the crystal pulling furnace leaks.
It should be noted that, after detecting the occurrence of the melt leakage phenomenon, a timely remedial process is required, and based on this, as shown in fig. 6, the system 40 may further include: a liquid nitrogen valve 404 configured to determine that a leakage phenomenon occurs in the melt inside the quartz crucible in the crystal pulling furnace corresponding to the determination portion 403, and discharge liquid nitrogen from an outlet of the exhaust pipe toward the direction of the quartz crucible based on an opening instruction of the determination portion 403 to reduce damage of the apparatus caused by the melt leakage by cooling the leaked melt. In detail, as shown in fig. 5, the liquid nitrogen valve may be connected to a control device for implementing the determining part and the determining part 403, and may be opened or closed based on a control command issued by the control device, and when receiving the opening command, the liquid nitrogen valve may be opened and discharge the liquid nitrogen from the gas discharge port pipe 16 toward the quartz crucible 12 as indicated by a dotted arrow in fig. 5.
Based on the description of the foregoing technical solution, the detailed work flow of detecting the melt leakage is described by taking the example of determining whether the melt leakage phenomenon occurs by detecting the temperature of the target component in the crystal pulling furnace 1, and with reference to fig. 5, the work flow may include:
first, the temperature sensor detects the temperature of the connection portion between the furnace body 10 and the exhaust port duct 16, the temperature data is labeled as D102, the judgment portion 402 compares D102 with a set temperature threshold 200, if D102 is not more than 200, the determination portion 403 can determine that no melt leakage occurs at this time, and a green indicator light indicating that the melt is normal and has no leakage in the alarm is turned on. If D102 is equal to or greater than 201 but equal to or less than another temperature threshold 350, the determination section 403 may determine that the melt leakage occurs at this time, but the leakage amount is small, and a yellow indicator light indicating that the melt leakage amount is low in the alarm is turned on. If D102 is 350 or more, the determination section 403 may determine that the melt leakage phenomenon occurs and the leakage amount is large, and turn on a red indicator light indicating that the melt leakage amount is high in the alarm.
In addition, when the yellow or red indicator light is on, the alarm can also give out alarm sound or alarm ring sound of melt leakage.
Then, when a yellow indicator light for indicating low melt leakage is turned on, liquid nitrogen gas is input in a low amount; when a red indicator light for indicating that the melt leakage quantity is high is turned on, liquid nitrogen gas is input in a high quantity.
And when the yellow or red indicator light is on, the liquid nitrogen gas can be input by automatically opening the valve or manually opening the valve.
For the control process of the above work flow, the control process may be represented by a PLC ladder diagram (LAD) shown in fig. 6, and for the control process shown in fig. 6, reference may be made to an explanation or explanation mode for the PLC ladder diagram, which is not described in detail in the embodiments of the present invention.
It is understood that in this embodiment, "part" may be part of a circuit, part of a processor, part of a program or software, etc., and may also be a unit, and may also be a module or a non-modular.
In addition, each component in the embodiment may be integrated in one processing unit, or each unit may exist alone physically, or two or more units are integrated in one unit. The integrated unit can be realized in a form of hardware or a form of a software functional module.
Based on the understanding that the technical solution of the present embodiment essentially or a part contributing to the prior art, or all or part of the technical solution may be embodied in the form of a software product stored in a storage medium, and include several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) or a processor (processor) to execute all or part of the steps of the method of the present embodiment. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and other various media capable of storing program codes.
Accordingly, the present embodiment provides a computer storage medium storing a program for detecting a melt leakage, wherein the program for detecting a melt leakage is executed by at least one processor to implement the method steps for detecting a melt leakage in the above technical solutions.
It should be noted that: the technical schemes described in the embodiments of the present invention can be combined arbitrarily without conflict.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A method of detecting melt leakage, the method comprising:
detecting state parameters of a detection target for detecting melt leakage in a crystal pulling furnace in the process of producing the silicon single crystal rod; wherein the state parameter of the target can be used for representing whether a melt leakage phenomenon occurs or not;
when the detected state parameter changes, judging the change characteristic of the state parameter;
and determining that the melt in the quartz crucible in the crystal pulling furnace leaks corresponding to the change characteristics meeting the set judgment criteria.
2. The method as set forth in claim 1, wherein the detecting of the state parameter of the detection target for detecting the melt leakage in the crystal pulling furnace comprises:
and detecting the temperature of a connecting part between the furnace body and the exhaust port pipeline in the crystal pulling furnace.
3. The method according to claim 2, wherein the determining the change characteristic of the state parameter when the detected state parameter changes comprises:
and when the temperature of the connecting part changes, acquiring the temperature change rate according to a set time interval.
4. The method as set forth in claim 3 wherein determining that the melt in the quartz crucible in the crystal pulling furnace is leaking in response to the characteristic of the variation satisfying a set criterion comprises:
when the temperature change rate of the connecting part in the time interval is larger than a set change rate threshold value, determining that the melt in the quartz crucible leaks, and the melt leakage amount is in a first level;
when the temperature change rate of the connecting part in the time interval is smaller than a set change rate threshold value, determining that the melt in the quartz crucible leaks, and the melt leakage amount is in a second level; wherein the melt leakage characterized by the first grade is greater than the melt leakage characterized by the second grade.
5. The method as claimed in claim 1, wherein the state parameter of the detection target for detecting the melt leakage in the crystal pulling furnace is detected; the method comprises the following steps:
arranging an observation reference object at the lower end of a guide cylinder in the crystal pulling furnace;
and detecting the distance between the observation reference object and the melt liquid level.
6. The method of claim 5, wherein determining the change characteristic of the state parameter when the detected state parameter changes comprises:
and when the distance between the observation reference object and the melt liquid level changes, acquiring the distance change rate according to a set time interval.
7. The method as set forth in claim 6 wherein determining that the melt in the quartz crucible in the crystal pulling furnace is leaking in response to the variation characteristic satisfying a set decision criterion comprises:
and when the distance change rate is not in a stable state, determining that the melt in the quartz crucible in the crystal pulling furnace leaks.
8. The method according to any one of claims 1 to 7, further comprising:
and correspondingly determining that the melt in the quartz crucible in the crystal pulling furnace leaks, opening a liquid nitrogen valve to discharge liquid nitrogen from the outlet of the exhaust pipe to the direction of the quartz crucible so as to reduce equipment damage caused by melt leakage by cooling the leaked melt.
9. A system for detecting melt leakage, the system comprising: a detection section, a judgment section, and a determination section; wherein the content of the first and second substances,
the detection part is configured to detect state parameters of a detection target for detecting melt leakage in the crystal pulling furnace in the process of producing the silicon single crystal rod; wherein the state parameter of the target can be used for representing whether a melt leakage phenomenon occurs or not;
the judging part is configured to judge the change characteristics of the state parameters when the detected state parameters are changed;
the determination part is configured to determine that the melt in the quartz crucible in the crystal pulling furnace leaks in response to the variation characteristics satisfying a set judgment criterion.
10. A computer storage medium, characterized in that the computer storage medium stores a program for detecting melt leakage, which when executed by at least one processor implements the method steps of detecting melt leakage of any of claims 1 to 8.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115369478A (en) * | 2021-05-20 | 2022-11-22 | 隆基绿能科技股份有限公司 | Crystal melt-back control method and equipment, crystal pulling furnace and computer storage medium |
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| JPH11180794A (en) * | 1997-12-22 | 1999-07-06 | Shin Etsu Handotai Co Ltd | Melt leak detection system for single crystal pulling-up device |
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| JP2014091656A (en) * | 2012-11-05 | 2014-05-19 | Shin Etsu Handotai Co Ltd | Molten liquid leakage detector of single crystal producing device |
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| CN115369478A (en) * | 2021-05-20 | 2022-11-22 | 隆基绿能科技股份有限公司 | Crystal melt-back control method and equipment, crystal pulling furnace and computer storage medium |
| CN115369478B (en) * | 2021-05-20 | 2024-03-01 | 隆基绿能科技股份有限公司 | Crystal remelting control method and equipment, crystal pulling furnace and computer storage medium |
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