CN112271195A

CN112271195A - Light-emitting element, preparation method thereof, display screen and electronic device

Info

Publication number: CN112271195A
Application number: CN202011139146.6A
Authority: CN
Inventors: 张健民
Original assignee: Guangdong Oppo Mobile Telecommunications Corp Ltd
Current assignee: Guangdong Oppo Mobile Telecommunications Corp Ltd
Priority date: 2020-10-22
Filing date: 2020-10-22
Publication date: 2021-01-26
Also published as: WO2022083279A1

Abstract

The embodiment of the application relates to a light-emitting element, a preparation method thereof, a display screen and electronic equipment, wherein the light-emitting element comprises an anode, a light-emitting layer and a cathode which are sequentially stacked on a substrate, and the anode comprises: a light-transmitting region for ambient light to enter the light-sensing device; a non-light-transmitting region provided with a non-light-transmitting electrode layer for transmitting a driving current of the light emitting element; wherein, the luminous layer corresponding to the light-transmitting area can emit light. Through set up the light-transmitting zone in the positive pole of light-emitting component, make light can pass and incide to the sensitization device from light-emitting component, namely, based on the structure of the light-emitting component of this application embodiment, can obtain higher light transmissivity. In addition, the light-emitting element of the embodiment of the application can realize the required light-emitting brightness without injecting excessive driving current, thereby avoiding the problem of short service life of the light-emitting element. Therefore, the embodiment of the application provides a light-emitting element with high light transmittance and good device stability.

Description

Light-emitting element, preparation method thereof, display screen and electronic device

Technical Field

The embodiment of the application relates to the technical field of display, in particular to a light-emitting element, a preparation method of the light-emitting element, a display screen and electronic equipment.

Background

With the rapid development of display technologies, the pursuit of high screen occupation ratio becomes the mainstream of display industry, and the technologies of off-screen fingerprints, off-screen cameras and the like are all used for realizing touch or camera functions and simultaneously not influencing display. However, the light transmittance of the light emitting element in the current display screen is insufficient, which greatly affects the light sensing precision and accuracy of the light sensing devices under the screen, such as the finger print under the screen, the camera under the screen, and the like.

Disclosure of Invention

In view of the above, it is necessary to provide a light-emitting element, a method for manufacturing the same, a display panel, and an electronic device, in order to solve the problem of insufficient light transmittance of the light-emitting element in the display panel.

A light-emitting element comprising an anode, a light-emitting layer, and a cathode, which are provided in this order, stacked on a substrate, the anode comprising:

a light-transmitting region for ambient light to enter the light-sensing device;

a non-light-transmitting region provided with a non-light-transmitting electrode layer for transmitting a driving current of the light emitting element;

wherein the light emitting layer corresponding to the light transmitting area can emit light.

A method of manufacturing a light emitting element, comprising:

providing a substrate;

forming an anode on the substrate, wherein the anode is provided with a light-transmitting area for ambient light to enter the photosensitive device and a non-light-transmitting area provided with a non-light-transmitting electrode layer, and the light-transmitting area and the non-light-transmitting area jointly cover a light-emitting area of the light-emitting element;

and sequentially forming a light emitting layer and a cathode on the anode.

A display screen, comprising:

the first display area is provided with a plurality of light-emitting elements, and the light-emitting elements are arranged in an array;

and the second display area is arranged around the first display area.

An electronic device, comprising:

a light sensing device;

a display screen as described above;

the second display area is used for allowing ambient light to enter the photosensitive device.

The light-emitting element comprises an anode, a light-emitting layer and a cathode which are sequentially stacked on a substrate, wherein the anode comprises: a light-transmitting region for ambient light to enter the light-sensing device; a non-light-transmitting region provided with a non-light-transmitting electrode layer for transmitting a driving current of the light emitting element; wherein the light emitting layer corresponding to the light transmitting area can emit light. Through set up the light-transmitting zone in the positive pole of light-emitting component, make light can pass and incide to the sensitization device from light-emitting component, namely, based on the structure of the light-emitting component of this application embodiment, can obtain higher light transmissivity. In addition, since the complete light-emitting layer is formed and holes can be injected more effectively through the anode, the light-transmitting area arranged in the anode does not influence the whole light-emitting area of the light-emitting layer. Based on a larger light-emitting area, the light-emitting element of the embodiment of the application can realize the required light-emitting brightness without injecting an overlarge driving current, so that the problem that the service life of the light-emitting element is shortened easily due to the overlarge driving current is solved. Therefore, the embodiment of the application provides a light-emitting element with high light transmittance and good device stability.

Drawings

FIG. 1 is a schematic longitudinal cross-sectional view of a light emitting device according to an embodiment;

FIG. 2 is a cross-sectional view of a light emitting device according to a first embodiment;

FIG. 3 is a cross-sectional view of a light emitting device according to a second embodiment;

FIG. 4 is a cross-sectional view of a light emitting device according to a third embodiment;

FIG. 5 is a schematic cross-sectional view of a light emitting device according to a fourth embodiment;

FIG. 6 is a schematic cross-sectional view of a light-emitting element according to a fifth embodiment;

FIG. 7 is a schematic longitudinal cross-sectional view of the light emitting device of the embodiment of FIG. 6 along the direction BB';

FIG. 8 is a schematic longitudinal sectional view of a light-emitting element of a sixth embodiment;

FIG. 9 is a schematic longitudinal sectional view of a light-emitting element according to another embodiment;

FIG. 10 is a schematic longitudinal sectional view of a light-emitting element according to still another embodiment;

FIG. 11 is a schematic longitudinal sectional view of a light-emitting element according to still another embodiment;

FIG. 12 is a schematic longitudinal sectional view of a light-emitting element according to still another embodiment;

FIG. 13 is a schematic structural diagram of a display screen according to an embodiment;

FIG. 14 is a schematic structural diagram of an electronic device according to an embodiment;

FIG. 15 is a schematic longitudinal sectional view of the electronic device of the embodiment of FIG. 14 along the direction CC';

FIG. 16 is a flow chart of a method for fabricating a light emitting device according to an embodiment;

FIG. 17 is a sub-flowchart of step 1604 of an embodiment;

FIG. 18 is a sub-flowchart of step 1706 of an embodiment;

FIG. 19 is a sub-flowchart of step 1604 of yet another embodiment;

FIG. 20 is a sub-flowchart of step 1604 of another embodiment;

fig. 21 is a flow diagram of steps for forming a driving circuit for a light emitting element on a substrate layer according to an embodiment.

Element number description:

a display screen: 10; the first display area: 11; the second display area: 12; a light emitting element: 100, respectively; anode: 110; a light-transmitting area: 111; a light-transmitting sub-region: 1111; a light-transmitting electrode layer: 1112; conductive bridge: 1113; a non-light-transmitting region: 112, a first electrode; a non-light-transmitting electrode layer: 1121; a first electrode layer: 1122; a second electrode layer: 1123, and (b); first transparent conductive layer: 1124; metal conductive layer: 1125; second transparent conductive layer: 1126; light-emitting layer: 120 of a solvent; cathode: 130, 130; conductive layer: 140 of a solvent; pixel definition layer: 150; substrate: 200 of a carrier; substrate layer: 210; buffer layer: 220, 220; an active layer: 230; a gate insulating layer: 240; gate electrode layer: 250 of (a); interlayer dielectric layer: 260 of a nitrogen atom; a source electrode: 271; drain electrode: 272; a planarization layer: 280 parts of; a touch layer: 300, respectively; a polarizer layer: 400, respectively; packaging layer: 500, a step of; a photosensitive device: 20.

Detailed Description

To facilitate an understanding of the embodiments of the present application, the embodiments of the present application will be described more fully below with reference to the accompanying drawings. Preferred embodiments of the present application are shown in the drawings. The embodiments of the present application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the embodiments of this application belong. The terminology used herein in the description of the embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the embodiments of the present application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

In the description of the embodiments of the present application, it is to be understood that the terms "upper", "lower", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on methods or positional relationships shown in the drawings, and are only used for convenience in describing the embodiments of the present application and simplifying the description, but do not indicate or imply that the devices or elements referred to must have specific orientations, be constructed in specific orientations, and be operated, and thus, should not be construed as limiting the embodiments of the present application.

As used herein, "electronic device" refers to an apparatus capable of receiving and/or transmitting communication signals including, but not limited to, a connection via at least one of the following:

(1) via wireline connections, such as via Public Switched Telephone Network (PSTN), Digital Subscriber Line (DSL), Digital cable, direct cable connections;

(2) via a Wireless interface means such as a cellular Network, a Wireless Local Area Network (WLAN), a digital television Network such as a DVB-H Network, a satellite Network, an AM-FM broadcast transmitter.

Electronic devices arranged to communicate over a wireless interface may be referred to as "mobile terminals". Examples of mobile terminals include, but are not limited to, the following electronic devices:

(1) satellite or cellular telephones;

(2) personal Communications Systems (PCS) terminals that may combine cellular radiotelephones with data processing, facsimile, and data Communications capabilities;

(3) radiotelephones, pagers, internet/intranet access, Web browsers, notebooks, calendars, Personal Digital Assistants (PDAs) equipped with Global Positioning System (GPS) receivers;

(4) conventional laptop and/or palmtop receivers;

(5) conventional laptop and/or palmtop radiotelephone transceivers, and the like.

Fig. 1 is a schematic longitudinal sectional view of a light-emitting element 100 according to an embodiment, where the light-emitting element 100 of the embodiment is applied to an electronic device equipped with an under-screen light-sensing device 20 and is disposed in a display area through which ambient light is received by the light-sensing device 20. The light sensing device 20 performs testing and control based on optical parameters by receiving light.

The light sensing device 20 may be an ambient light sensor, and the ambient light sensor may sense the brightness of the electronic device, and the electronic device may adjust the brightness of the display screen according to the brightness of the electronic device. The light sensing device 20 may also be an optical distance sensor, which may receive light reflected by the target object, so that the electronic device may determine the distance between the target object and the electronic device. The photosensitive device 20 may also be a camera, in which a plurality of sensors are arranged in an array, and a complete image is formed according to a photosensitive result of each sensor. The light sensing device 20 may also be an optical fingerprint sensor that can recognize protrusions and depressions on a finger by receiving intensity of light reflected from the finger, thereby performing fingerprint recognition. It should be noted that the above-mentioned various photosensitive devices 20 are only used for exemplary illustration, and are not used to specifically limit the protection scope of the present application.

Referring to fig. 1, in the present embodiment, the light emitting element 100 includes an anode 110, a light emitting layer 120, and a cathode 130, which are sequentially stacked, on a substrate 200.

The light-emitting layer 120 at least includes a light-emitting material layer, and the light-emitting material layer is a complete film structure. The light emitting material layer may include an organic light emitting material and/or an inorganic light emitting material, and the light emitting material of an appropriate light emitting wavelength may be set according to display requirements. Further, the light emitting layer 120 may further include at least one of a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), a Hole Blocking Layer (HBL), an Electron Transport Layer (ETL), and an Electron Injection Layer (EIL) to reduce a barrier for carrier injection between adjacent film layers, thereby improving carrier injection efficiency. The cathode 130 is made of a transparent conductive material, such as indium tin oxide.

The anode 110 includes a light-transmitting region 111 and a non-light-transmitting region 112. And a light-transmitting region 111 for allowing ambient light to be incident on the light-sensing device 20. The transparent region 111 may be provided with a transparent conductive film layer, and if the transparent region 111 is provided with a transparent conductive film layer, the light emitting layer 120 corresponding to the transparent region 111 may obtain holes from the transparent conductive film layer and obtain electrons from the cathode 130, so that the electrons and the holes are combined and emit light. The light-transmitting region 111 may not be provided with a conductive film layer, that is, the region of the light-transmitting region 111 is a cavity structure, and if the light-transmitting region 111 is not provided with a conductive film layer, the light-emitting layer 120 corresponding to the light-transmitting region 111 can obtain holes from the adjacent non-light-transmitting electrode layer 1121 and obtain electrons from the cathode 130, so that the electrons and the holes are combined and emit light. Based on the above light emitting principle, the light emitting layer 120 corresponding to the light transmitting region 111 of the present embodiment can emit light, that is, the light emitting element 100 of the present embodiment can allow ambient light to pass through the light emitting element 100 and reach the light sensing device 20 without sacrificing the light emitting area of the device.

It is understood that the larger the area ratio of the light-transmitting region 111 occupied in the anode 110, the stronger the amount of light transmission can be achieved, thereby improving the light sensing accuracy and the test efficiency of the light sensing device 20. The smaller the area ratio of the light-transmitting region 111 occupied in the anode 110, the better the carrier injection effect of the light-transmitting region 111, and accordingly, the higher the light-emitting efficiency and luminance uniformity of the light-emitting element 100. Therefore, the light-transmitting region 111 with an appropriate size can be set according to the light-sensing requirements of the light-sensing device 20, so as to achieve a better light-transmitting amount and light-emitting efficiency.

The non-light-transmitting region 112 is provided with a non-light-transmitting electrode layer 1121, and the non-light-transmitting electrode layer 1121 serves as at least a part of the anode 110 of the light-emitting element 100 to realize the function of carrier transport, that is, the non-light-transmitting electrode layer 1121 can serve as the anode 110 to transport the driving current of the light-emitting element 100. The material of the non-light-transmitting electrode layer 1121 may be, for example, one of metal materials such as silver and aluminum, and further, the material of the non-light-transmitting electrode layer 1121 should have a high light reflectivity. The non-light-transmitting electrode layers 1121 may be formed by a simultaneous evaporation method or may be formed by a step-by-step evaporation method.

Illustratively, a silver material may be used to form the first reflective layer, and aluminum may be used as the second reflective layer, and the first reflective layer and the second reflective layer are stacked in sequence to jointly form the non-light-transmissive electrode layer 1121, i.e., to serve as at least a portion of the anode 110. Specifically, the light emitting shape of the light emitting element 100 is similar to that of a lambertian illuminant, that is, a part of light emitted from the light emitting layer 120 can directly penetrate through the cathode 130 to exit, and another part of light emitted from the light emitting layer 120 can irradiate onto the first reflective layer and the second reflective layer, and is reflected by the first reflective layer and the second reflective layer to exit through the cathode 130. Therefore, by using a metal material with high reflectivity as the non-light-transmitting electrode layer 1121, the light-emitting efficiency of the organic light-emitting device 100 can be effectively improved, and the power consumption of the device can be effectively reduced. Moreover, the adhesion between the aluminum and the film structure such as the planarization layer 280 in the substrate 200 is high, and therefore, the aluminum material is used to contact the substrate 200, which can effectively increase the adhesion between the anode 110 and the substrate 200, thereby improving the structural reliability of the light emitting element 100.

In the present embodiment, the light emitting element 100 includes an anode 110, a light emitting layer 120, and a cathode 130, which are stacked and arranged in this order on a substrate 200, the anode 110 including: a light-transmitting region 111 for allowing ambient light to be incident on the light-sensing device 20; a non-light-transmitting region 112 provided with a non-light-transmitting electrode layer 1121, wherein the non-light-transmitting electrode layer 1121 is used for transmitting a driving current of the light-emitting element 100; wherein the light emitting layer 120 corresponding to the light transmitting region 111 can emit light. By providing the light-transmitting region 111 in the anode 110 of the light-emitting element 100, light can be made to pass through the light-emitting element 100 and be incident on the photosensitive device 20, that is, a higher ambient light transmittance can be obtained based on the structure of the light-emitting element 100 of the present embodiment. Moreover, since the complete light emitting layer 120 is formed and holes can be injected more efficiently through the anode 110, the light transmitting region 111 provided in the anode 110 does not affect the entire light emitting area of the light emitting layer 120. Based on a larger light emitting area, the light emitting device 100 of the present embodiment can achieve the required luminance without injecting an excessive driving current, thereby avoiding the problem that the driving current is too large, which easily causes the lifetime of the light emitting device 100 to be shortened. Therefore, the present embodiment provides a light-emitting element 100 having high light transmittance and good device stability.

Fig. 2 is a cross-sectional view of the light emitting device 100 according to the first embodiment, it should be noted that the cross-sectional views of the embodiments of the present application are all cross-sectional views along the AA' direction of the embodiment of fig. 1, and further description will not be repeated in other embodiments. Referring to fig. 2, in the present embodiment, the non-light-transmitting region 112 is a circumferentially closed region and surrounds the light-transmitting region 111. The outline of the non-light-transmitting area 112 is a closed figure, and the light-transmitting area 111 is disposed in the non-light-transmitting area 112.

In particular, the light-transmissive region 111 includes one or more light-transmissive sub-regions 1111. The transparent region 111 in the embodiment of fig. 2 is a complete and continuous structure, and the transparent region 111 in the embodiment of fig. 2 includes only one transparent sub-region 1111. On the premise of having the same total light transmission area, the requirement on the precision of the preparation process is lower by only arranging one light transmission sub-region 1111, the defects of the device structure are not easy to occur in the preparation process, and the yield is higher. Therefore, the structure in which only one light-transmitting sub-region 1111 is provided is suitable for the light-emitting element 100 having a small size, and the manufacturing difficulty and manufacturing cost of the light-emitting element 100 can be greatly reduced.

Fig. 3 is a cross-sectional view of a light emitting device 100 according to a second embodiment, and referring to fig. 3, in the present embodiment, a light-transmitting region 111 includes four light-transmitting sub-regions 1111. Wherein, four light-transmitting sub-regions 1111 are arranged at intervals. It can be understood that, on the premise of having the same total light-transmitting area, the provision of the plurality of light-transmitting sub-regions 1111 can reduce the problem of the increase of the anode resistance caused by the hole digging of the light-transmitting region 111 as much as possible, thereby effectively improving the uniformity of the light emission of the display device. Moreover, when the ambient light is incident to the photosensitive device 20 through the plurality of light-transmitting sub-regions 1111, the sensing of the sensing element can be more uniform, thereby improving the sensing accuracy and precision of the photosensitive device 20.

Optionally, the shape of the light-transmitting sub-region 1111 may be a circle, an ellipse, a rectangle, a regular polygon, or the like, and any shape of the light-transmitting sub-region 1111 may achieve the purpose of the present embodiment. When the light-transmitting region 111 includes a plurality of light-transmitting sub-regions 1111, the plurality of light-transmitting sub-regions 1111 may have the same shape or different shapes. Therefore, the shape of the light-transmitting sub-region 1111 can be determined according to the requirements of light sensing, light emitting, and manufacturing processes.

Further, the sizes of the plurality of light-transmitting sub-regions 1111 are the same. For example, if the plurality of light-transmitting sub-regions 1111 have different shapes, for example, the shape of a partial light-transmitting sub-region 1111 is a circle, and the shape of another partial light-transmitting sub-region 1111 is a rectangle, the light-transmitting area of each light-transmitting sub-region 1111 may be set to be the same. For another example, if the plurality of light-transmitting sub-regions 1111 have the same shape, for example, all of the light-transmitting sub-regions 1111 have a circular shape, the diameter of each light-transmitting sub-region 1111 may be set to be the same. It will be appreciated that providing the same size light-transmissive sub-region 1111 may further improve the uniformity of light emission of the display device, as well as improve the uniformity of light sensing of the light sensing device 20.

Fig. 4 is a cross-sectional view of a light emitting device 100 according to a third embodiment, and referring to fig. 4, in the present embodiment, a light-transmitting region 111 includes two light-transmitting sub-regions 1111. As can be seen from fig. 3 and 4, the number of the light-transmissive sub-regions 1111 is not specifically limited in the embodiments of the present application. However, it can be understood that, on the premise of achieving the same total light transmission area, the smaller the number of the light transmission sub-regions 1111 is, the larger the size of each light transmission sub-region 1111 is, the lower the corresponding preparation difficulty is; the larger the number of the light-transmitting sub-regions 1111 is provided, the smaller the size of each light-transmitting sub-region 1111 is, and thus the smaller the influence on the resistance of the anode 110, that is, the lower the light emission efficiency, and the better the light emission uniformity.

Fig. 5 is a cross-sectional view of a light emitting device 100 according to a fourth embodiment, and referring to fig. 5, in the present embodiment, an outline of a non-light-transmitting region 112 is triangular, that is, an outline of a light emitting region of the light emitting device 100 is also triangular. It is to be understood that the shape of the light emitting region of the light emitting element 100 is not particularly limited in the embodiments of the present application, and may be, for example, a rectangle, a parallelogram, a triangle, or the like, and specifically, the non-light-transmitting region 112 having an appropriate shape may be provided according to the positional relationship between the adjacent light emitting elements 100, the arrangement manner of the pixel driving circuit, or the like.

Further, the non-light-transmitting region 112 may be a symmetrical pattern, and the arrangement of the plurality of light-transmitting sub-regions 1111 corresponds to the symmetrical characteristic of the non-light-transmitting region 112, so as to obtain better light-emitting uniformity. Exemplarily, referring to fig. 4 and 5, in the two embodiments, the non-light-transmitting region 112 is in an axisymmetric pattern, and the light-transmitting sub-regions 1111 are arranged symmetrically with respect to the symmetry axis of the non-light-transmitting region 112. Specifically, in the embodiment shown in fig. 4, the two light-transmitting sub-regions 1111 are both in an axisymmetric pattern, the two light-transmitting sub-regions 1111 are both disposed on the symmetry axis, and the symmetry axis of the light-transmitting sub-region 1111 coincides with the symmetry axis of the non-light-transmitting region 112. In the embodiment shown in fig. 5, two light-transmitting sub-regions 1111 are respectively disposed on two sides of the symmetry axis of the non-light-transmitting region 112 and are symmetrically disposed about the symmetry axis.

For another example, with reference to fig. 3, the non-light-transmitting region 112 is a centrosymmetric structure, the light-transmitting sub-regions 1111 are distributed in a centrosymmetric manner, and the symmetric center of the light-transmitting sub-regions 1111 coincides with the symmetric center of the non-light-transmitting region 112. Compared with an axisymmetric arrangement mode, the plurality of light-transmitting sub-regions 1111 distributed in a centrosymmetric manner have a smaller influence on the light-emitting element 100, that is, the light-emitting element 100 with higher light-emitting brightness and higher light-emitting efficiency can be obtained.

In one embodiment, at least one of the light-transmissive sub-regions 1111 is provided with a light-transmissive electrode layer 1112, and the light-transmissive electrode layer 1112 is connected to the non-light-transmissive electrode layer 1121 for functioning as the anode 110 together with the non-light-transmissive electrode layer 1121. The material of the light-transmitting electrode layer 1112 may be, but is not limited to, at least one of indium tin oxide, silver nanowires, carbon nanotubes, and a metal grid, and all of the materials have good light transmittance, i.e., have a small influence on the photosensitive result of the photosensitive device 20. Moreover, the above materials have better conductivity, so that the hole injection capability of the light-transmitting region 111 can be effectively improved, and the carrier recombination efficiency and the light-emitting efficiency of the light-emitting layer 120 can be improved, thereby providing the light-emitting element 100 with higher light-emitting efficiency.

Fig. 6 is a schematic cross-sectional view of a light-emitting element according to a fifth embodiment, and fig. 7 is a schematic longitudinal sectional view of the light-emitting element according to the embodiment of fig. 6 along the direction BB'. With reference to fig. 6 and fig. 7, in the present embodiment, the non-light-transmissive electrode layer 1121 includes a first electrode layer 1122 and a second electrode layer 1123 disposed at an interval; the light-transmitting region 111 is provided with a light-transmitting electrode layer 1112, the light-transmitting electrode layer 1112 is disposed between the first electrode layer 1122 and the second electrode layer 1123 and is connected to the first electrode layer 1122 and the second electrode layer 1123, respectively, and the light-transmitting electrode layer 1112, the first electrode layer 1122 and the second electrode layer 1123 collectively serve as the anode 110.

The material of the light-transmitting electrode layer 1112 of the present embodiment may be, but is not limited to, at least one of indium tin oxide, silver nanowires, carbon nanotubes, and metal grids, and all of the above materials have good light transmittance, that is, have a small influence on the photosensitive result of the photosensitive device 20. Moreover, the above materials have better conductivity, so that the hole injection capability of the light-transmitting region 111 can be effectively improved, and the carrier recombination efficiency and the light-emitting efficiency of the light-emitting layer 120 can be improved. Further, when the light-emitting element 100 is connected to a pixel driver circuit, only one of the first electrode layer 1122 and the second electrode layer 1123 may be connected to the pixel driver circuit, and carrier movement between the first electrode layer 1122 and the second electrode layer 1123 may be realized by the light-transmitting electrode layer 1112, thereby preventing the light-emitting area of the light-emitting element 100 from being affected by the provision of the light-transmitting region 111.

With continued reference to fig. 6, the light-transmissive electrode layer 1112 includes a plurality of conductive bridges 1113, that is, the light-transmissive electrode layer 1112 partially covers the light-transmissive region 111, one end of the conductive bridges 1113 is connected to the first electrode layer 1122, and the other end of the conductive bridges 1113 is connected to the second electrode layer 1123. It should be noted that, in the embodiment shown in fig. 6, the conductive bridge 1113 is a linear structure, in other embodiments, the conductive bridge 1113 may also be an arc-shaped structure, a wave-shaped structure, and the like, and the embodiment of the present application does not limit the specific structure of the conductive bridge 1113, and only two ends of the conductive bridge 1113 need to be respectively connected to the first electrode layer 1122 and the second electrode layer 1123 in a one-to-one correspondence manner. Further, a plurality of conductive bridges 1113 may each extend along a first direction, and one end of the conductive bridge 1113 in the first direction is connected to the first electrode layer 1122, and the other end of the conductive bridge 1113 is connected to the second electrode layer 1123. Still further, a plurality of the conductive bridges 1113 are arranged at equal intervals in a second direction, which is perpendicular to the first direction. The above arrangement can arrange the plurality of conductive bridges 1113 more closely, so as to achieve better conductivity with a smaller total volume of the conductive bridges 1113, thereby achieving a smaller size of the light emitting device 100. The conductive bridge 1113 is preferably made of a material with high conductivity, such as a silver nanowire or a carbon nanotube, so that the conductivity of the conductive bridge 1113 is further improved.

Fig. 8 is a schematic longitudinal cross-sectional view of a light emitting device 100 according to a sixth embodiment, as can be seen from fig. 8, a light transmitting electrode layer 1112 with a conductive bridge 1113 structure may also be disposed in the non-light transmitting region 112 that is circumferentially closed, and the specific manner of disposing the conductive bridge 1113 can be found in the embodiment of fig. 6, which is not repeated herein. It is understood that, based on the principle similar to that of fig. 6, in the present embodiment, the light emitting efficiency of the light emitting element 100 can be further improved by providing the conductive bridge 1113.

Fig. 9 is a schematic longitudinal cross-sectional view of a light emitting device 100 according to another embodiment, referring to fig. 9, in this embodiment, a non-light-transmissive electrode layer 1121 may include a first transparent conductive layer 1124, a metal conductive layer 1125, and a second transparent conductive layer 1126 which are sequentially stacked, and a light-transmissive electrode layer 1112 may completely cover a light-transmissive region 111. Further, the material of the first transparent conductive layer 1124 and the second transparent conductive layer 1126 may be the same, and the material of the light-transmitting electrode layer 1112 may be the same as the material of the first transparent conductive layer 1124 and the second transparent conductive layer 1126, for example, the material of the light-emitting electrode layer 1112, the material of the first transparent conductive layer 1124, and the material of the second transparent conductive layer 1126 may be indium tin oxide. Based on the transparent electrode layer, the first transparent conductive layer 1124 and the second transparent conductive layer 1126 made of the same material, the light-transmitting electrode layer 1112 can be formed simultaneously in the process of preparing the structure of the non-light-transmitting electrode layer 1121, so that the preparation process is reduced, and the preparation efficiency of the device is improved.

Fig. 10 is a schematic longitudinal section view of a light emitting device 100 according to another embodiment, and it can be seen from fig. 9 and 10 that the thickness of the light transmissive electrode layer 1112 is not specifically limited in the embodiment of the present application, and only the top of the light transmissive electrode layer 1112 is not higher than the top of the non-light transmissive electrode layer 1121. For example, in the embodiment shown in fig. 9, the top of the light-transmissive electrode layer 1112 is flush with the top of the non-light-transmissive electrode layer 1121, and in the embodiment shown in fig. 10, the top of the light-transmissive electrode layer 1112 is flush with the top of the first transparent conductive layer 1124. It is understood that the light-transmissive electrode layer 1112 can be provided with a suitable thickness according to the complexity of the fabrication process flow and the performance requirements of the device.

Fig. 11 is a schematic longitudinal section view of a light emitting device 100 according to a further embodiment, referring to fig. 11, in this embodiment, the light emitting device 100 further includes a conductive layer 140, the conductive layer 140 may be disposed between the substrate 200 and the anode 110, and the conductive layer 140 is respectively connected to the light transmissive electrode layer 1112 and the non-light transmissive electrode layer 1121. In other embodiments, the conductive layer 140 can be disposed between the anode 110 and the light emitting layer 120, and it can be understood that the light transmitting electrode layer 1112 has a slightly weaker electrical conductivity than the non-light transmitting electrode layer 1121. Therefore, in this embodiment, by providing the conductive layer 140, the difference between the transport properties of carriers in different regions can be further improved, thereby improving the uniformity of light emission of the light emitting element 100.

Fig. 12 is a schematic longitudinal cross-sectional view of a light emitting device 100 according to still another embodiment, and referring to fig. 12, a substrate 200 includes a substrate layer 210, a buffer layer 220, an active layer 230, a gate insulating layer 240, a gate electrode layer 250, an interlayer dielectric layer 260, a source electrode 271, a drain electrode 272, and a planarization layer 280. The driving circuit of the thin film transistor of the light emitting element 100 can be formed by the above structure, thereby controlling the light emitting element 100 to emit light.

Further, a pixel definition layer 150 is formed on the surface of the substrate 200, and the light emitting elements 100 can be disposed in the grooves formed by the pixel definition layer 150, so as to prevent color mixing and other problems between adjacent light emitting elements 100, thereby improving display quality. Still further, at least one of the touch layer 300, the polarizer layer 400 and the package layer 500 may be further formed on the light emitting element 100, and by forming the polarizer layer 400, the influence of ambient light on a display screen may be prevented, thereby improving display quality, and by providing a touch module, the function of the light emitting element 100 may be further extended, thereby providing a more flexible light emitting element 100, and by forming the package layer 500, the influence of water and oxygen in the environment on the light emitting element 100 may be prevented, thereby improving the service life of the light emitting element 100.

Fig. 13 is a schematic structural diagram of the display screen 10 according to an embodiment, and referring to fig. 13, the display screen 10 includes a first display area 11 and a second display area 12. The first display area 11 is provided with a plurality of light emitting elements 100 as described above, the plurality of light emitting elements 100 are arranged in an array, and the first display area 11 is used for light transmission of the light sensing device 20. The second display area 12 is arranged 100 around said first display area, the second display area 12 being a regular display area. In this embodiment, based on the structure of the light emitting device 100, the first display region 11 and the second display region 12 can have the same PPI, so that the jaggy and graininess of the first display region 11 are reduced, the display quality of the display screen 10 is improved, and the viewing experience of the user is improved.

Fig. 14 is a schematic structural diagram of an electronic device of an embodiment, and fig. 15 is a schematic longitudinal sectional view of the electronic device of the embodiment of fig. 14 along a direction CC', and fig. 14 and 15 are combined to make reference, wherein in the embodiment, the electronic device includes a photosensitive device 20 and the display screen 10 as described above; wherein the second display area 12 is used for allowing ambient light to enter the photosensitive device 20. Based on the display screen 10, the electronic device of the embodiment can have better display resolution and display quality, so that the use experience of a user is greatly improved.

Fig. 16 is a flowchart of a method for manufacturing the light emitting element 100 according to an embodiment, and referring to fig. 16, in the embodiment, the method for manufacturing the light emitting element 100 includes steps 1602 to 1606.

Step 1602, providing a substrate 200;

step 1604, forming an anode 110 on the substrate 200, where the anode 110 has a transparent region 111 for ambient light to enter the light sensing device 20 and a non-transparent region 112 with a non-transparent electrode layer 1121, and the transparent region 111 and the non-transparent region 112 collectively cover a light emitting region of the light emitting element 100;

in step 1606, a light emitting layer 120 and a cathode 130 are sequentially formed on the anode 110.

Based on the above manufacturing method, the present embodiment can form the light emitting element 100 having higher light transmittance and device stability. It can be understood that, for the specific structure of the light emitting element 100 formed based on the present embodiment, reference may be made to the foregoing product embodiments, and details are not described again in the present embodiment.

FIG. 17 is a sub-flowchart of step 1604 according to an embodiment, and referring to FIG. 17, in the embodiment, the method includes steps 1702 to 1706.

Step 1702, sequentially forming a first transparent conductive layer 1124, a metal conductive layer 1125, and a second transparent conductive layer 1126 on the substrate 200;

step 1704, etching the second transparent conductive layer 1126, the metal conductive layer 1125 and the first transparent conductive layer 1124 to the surface of the substrate 200 to form a first groove, the area of the first groove corresponding to the light-transmitting region 111;

step 1706, forming a light-transmitting electrode layer 1112 in the first trench, wherein the light-transmitting electrode layer 1112 and the remaining second transparent conductive layer 1126, the metal conductive layer 1125 and the first transparent conductive layer 1124 together serve as the anode 110.

In this embodiment, the material of the light-transmitting electrode layer 1112 may be, but is not limited to, at least one of indium tin oxide, silver nanowires, carbon nanotubes, and metal grids, which all have good light transmittance, i.e., have less influence on the photosensitive result of the photosensitive device 20. Moreover, the above materials have better conductivity, so that the hole injection capability of the light-transmitting region 111 can be effectively improved, and the carrier recombination efficiency and the light-emitting efficiency of the light-emitting layer 120 can be improved. That is, the present embodiment provides a method for manufacturing the light-emitting element 100 with higher light-emitting efficiency.

It is understood that, in other embodiments, the light-transmitting electrode layer 1112 may not be formed, and only the first trench is reserved, so the process flow of the manufacturing method is simpler, and thus the requirement on the manufacturing process is relatively lower, the yield of the formed light-emitting element 100 is higher, and the method is suitable for a device with lower light-emitting uniformity of the light-emitting element 100.

FIG. 18 is a sub-flowchart of step 1706 of an embodiment, referring to FIG. 18, in which the method includes steps 1802 through 1804.

Step 1802, filling a light-transmitting material layer in the first trench;

step 1808, etching the light-transmitting material layer to the surface of the substrate 200, and using the remaining light-transmitting material layer as the light-transmitting electrode layer 1112.

In the present embodiment, the etching region corresponds to the design region of the conductive bridge, so that the conductive bridge 1113 shown in fig. 6 is formed based on the above-mentioned manufacturing method, so as to provide a manufacturing method of a light-transmitting material layer with better carrier transport performance, i.e., a manufacturing method of a light-emitting element 100 with better light-emitting performance. It is understood that the specific structure of the conductive bridge 1113 may refer to the foregoing product embodiments, and details are not repeated in this embodiment.

Fig. 19 is a sub-flowchart of step 1604 of another embodiment, and referring to fig. 19, in this embodiment, the method includes steps 1902 to 1906.

Step 1902, forming a first transparent conductive layer 1124 and a metal conductive layer 1125 on the substrate 200 in sequence;

step 1904, etching the first transparent conductive layer 1124 and the metal conductive layer 1125 to the surface of the substrate 200 to form a second trench, the area of the second trench corresponding to the light-transmitting region 111;

step 1906, forming a second transparent conductive layer 1126 in said second trench and on the surface of said metal conductive layer 1125, said first transparent conductive layer 1124, said metal conductive layer 1125, and said second transparent conductive layer 1126 collectively serving as said anode 110.

In this embodiment, based on the above-described manufacturing method, a light-transmitting material layer as shown in fig. 9 can be formed, thereby providing a manufacturing method of the light-emitting element 100 superior in light-emitting performance. It can be understood that the specific structure of the light-transmitting material layer formed in this embodiment may refer to the product embodiment described above, and details are not described again in this embodiment.

Fig. 20 is a sub-flowchart of step 1604 of another embodiment, and referring to fig. 20, in this embodiment, the method includes steps 2002 through 2004.

Step 2002, sequentially forming a first transparent conductive layer 1124, a metal conductive layer 1125 and a second transparent conductive layer 1126 on the substrate 200;

in step 2004, the second transparent conductive layer 1126 and the metal conductive layer 1125 are etched to the surface of the first transparent conductive layer 1124 to form the light-transmitting region 111, and the first transparent conductive layer 1124 and the remaining metal conductive layer 1125 and the second transparent conductive layer 1126 collectively serve as the anode 110.

In this embodiment, based on the above-described manufacturing method, a light-transmitting material layer as shown in fig. 10 can be formed, thereby providing a manufacturing method of the light-emitting element 100 superior in light-emitting performance. It can be understood that the specific structure of the light-transmitting material layer formed in this embodiment may refer to the product embodiment described above, and details are not described again in this embodiment.

In one embodiment, the steps further include providing a substrate layer 210, and forming a driving circuit of the light emitting element 100 on the substrate layer 210, and fig. 21 is a flowchart illustrating steps of forming the driving circuit of the light emitting element 100 on the substrate layer 210 according to an embodiment, and referring to fig. 21, the steps 2102 to 2112 are included in this embodiment.

Step 2102, forming a buffer layer 220, an active layer 230 and a gate insulating layer 240 on the substrate layer 210 in sequence;

specifically, a light-shielding layer may be further formed between the substrate layer 210 and the buffer layer 220, and the light-shielding layer covers a portion of the substrate layer 210. The material of the light shielding layer may be a metal or an alloy capable of reflecting light, such as molybdenum, aluminum, copper, chromium, tungsten, titanium, tantalum, and the like. The light-shielding material layer may be formed on the surface of the substrate layer 210 by physical vapor deposition, chemical vapor deposition, or the like, and then patterned to obtain the light-shielding layer, where the patterning manner may be wet etching or dry etching.

The buffer layer 220 is formed on a side of the light-shielding layer away from the substrate layer 210, and completely covers the substrate layer 210. The material of the buffer layer 220 may be an insulating material such as silicon oxide or silicon nitride, and the material is not particularly limited. Further, the buffer layer 220 may be formed by means of chemical vapor deposition.

The active layer 230 is formed on the buffer layer 220, and after the active layer 230 is formed, the active layer 230 is ion-doped or a metal conductive layer is disposed to form corresponding source and drain regions. The material of the active layer 230 may be a metal oxide, such as Indium Gallium Zinc Oxide (IGZO), but not limited thereto, and may also be one or more of Aluminum Zinc Oxide (AZO), Indium Zinc Oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), boron-doped zinc oxide (BZO), and magnesium-doped zinc oxide (MZO). In addition, the active layer 230 may also be a polysilicon material or other materials. Further, the active layer 230 may be formed by chemical vapor deposition, physical vapor deposition, or other processes. In this step, the active layer 230 is provided for the entire layer.

The gate insulating layer 240 is formed on the active layer 230 and the buffer layer 220. The material of the gate insulating layer 240 may be an insulating material such as silicon oxide or silicon nitride, and the material thereof is not particularly limited. Further, the gate insulating layer 240 may be entirely formed on the active layer 230 and extend to cover the active layer 230 and the buffer layer 220 by using a chemical vapor deposition (cvd) process or other processes, i.e., the gate insulating layer 240 is formed on the active layer 230 and the buffer layer 220.

At step 2104, a gate metal layer is formed on the gate insulating layer 240 and patterned to form a gate electrode layer 250.

Specifically, the material of the gate metal layer may be, but not limited to, molybdenum, aluminum, and copper, and may also be, for example, chromium, tungsten, titanium, and tantalum, and alloys containing these materials, and the material thereof is not particularly limited herein. Further, a gate metal layer may be formed on the gate insulating layer 240 by a physical vapor deposition or other process and patterned through an etching process to form the gate electrode layer 250.

In step 2106, an interlayer dielectric layer 260 is formed on the gate electrode layer 250 and the gate insulating layer 240.

Specifically, an interlayer dielectric layer 260 is formed on the gate electrode layer 250 and extends to cover the gate insulating layer 240, i.e., the interlayer dielectric layer 260 is formed on the gate electrode layer 250 and the gate insulating layer 240. The material of the interlayer dielectric layer 260 may be an insulating material such as silicon oxide or silicon nitride. Further, the interlayer dielectric layer 260 may be formed by chemical vapor deposition or other processes.

Step 2108, etching the interlayer dielectric layer 260 and the gate insulating layer 240 to form a plurality of via holes, wherein the via holes expose a portion of the active layer 230;

step 2110, forming a source drain layer in the via hole and on the interlayer dielectric layer 260, and patterning the source drain layer to form a source 271 and a drain 272.

Specifically, the gate insulating layer 240 and the interlayer dielectric layer 260 are etched to form via holes corresponding to the source and drain regions of the active layer 230. When the gate insulating layer 240 is etched, the interlayer dielectric layer 260 may be etched by a self-aligned process. In this embodiment, after the gate electrode layer 250 is formed by wet etching, the gate insulating layer 240 may not be etched, but the interlayer dielectric layer 260 may be deposited first, an etching region may be defined by a photolithography process, and then the interlayer dielectric layer 260 and the gate insulating layer 240 may be etched simultaneously, thereby saving an etching step and improving productivity.

In step 2112, a planarization layer 280 is formed on the interlayer dielectric layer 260, the source 271 and the drain 272.

Specifically, a passivation layer may be further formed before the planarization layer 280 is formed, and the passivation layer may be made of an inorganic material such as silicon oxide or silicon nitride and is formed on the source and drain layers by chemical vapor deposition or other processes. The material of the planarization layer 280 may be photoresist, and may be formed on the passivation layer by coating.

It should be understood that, although the respective steps in the flowcharts of fig. 16 to 21 are sequentially shown as indicated by arrows, the steps are not necessarily sequentially performed in the order indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Also, at least some of the steps in fig. 16-21 may include multiple sub-steps or multiple stages that are not necessarily performed at the same time, but may be performed at different times, and the order of performing the sub-steps or stages is not necessarily sequential, but may be performed alternately or alternatingly with other steps or at least some of the sub-steps or stages of other steps.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express a few embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for those skilled in the art, variations and modifications can be made without departing from the concept of the embodiments of the present application, and these embodiments are within the scope of the present application. Therefore, the protection scope of the embodiments of the present application shall be subject to the appended claims.

Claims

1. A light-emitting element comprising an anode, a light-emitting layer, and a cathode, which are stacked in this order on a substrate, wherein the anode comprises:

2. The light-emitting element according to claim 1, wherein the non-light-transmitting region is a circumferentially closed region and surrounds the light-transmitting region.

3. The light-emitting element according to claim 2, wherein the light-transmitting region includes one or more light-transmitting sub-regions, and the light-transmitting sub-regions are spaced apart from each other.

4. The light-emitting element according to claim 3, wherein the plurality of light-transmitting sub-regions are arranged in a centrosymmetric manner, the non-light-transmitting region is a centrosymmetric structure, and the centers of symmetry of the plurality of light-transmitting sub-regions coincide with the center of symmetry of the non-light-transmitting region.

5. A light-emitting element according to claim 3, wherein at least one of the light-transmitting sub-regions is provided with a light-transmitting electrode layer, and the light-transmitting electrode layer is connected with the non-light-transmitting electrode layer and used as the anode together with the non-light-transmitting electrode layer.

6. The light-emitting element according to claim 1, wherein the non-light-transmitting electrode layer comprises a first electrode layer and a second electrode layer which are provided at intervals;

the light-transmitting area is provided with a light-transmitting electrode layer, the light-transmitting electrode layer is arranged between the first electrode layer and the second electrode layer and is respectively connected with the first electrode layer and the second electrode layer, and the light-transmitting electrode layer, the first electrode layer and the second electrode layer jointly serve as the anode.

7. The light-emitting element according to claim 6, wherein the light-transmitting electrode layer includes a plurality of conductive bridges, one end of each of the conductive bridges is connected to the first electrode layer, and the other end of each of the conductive bridges is connected to the second electrode layer.

8. The light-emitting element according to claim 7, wherein a plurality of the conductive bridges are arranged at equal intervals.

9. The light-emitting element according to claim 6, wherein a material of the light-transmitting electrode layer is at least one of indium tin oxide, silver nanowires, carbon nanotubes, and a metal mesh.

10. The light-emitting element according to claim 6, further comprising:

and the conducting layer is arranged between the substrate and the anode or between the anode and the light-emitting layer, and is respectively connected with the light-transmitting electrode layer and the non-light-transmitting electrode layer.

11. A method for manufacturing a light-emitting element, comprising:

providing a substrate;

and sequentially forming a light emitting layer and a cathode on the anode.

12. The method of claim 11, wherein the forming an anode on the substrate comprises:

sequentially forming a first transparent conductive layer, a metal conductive layer and a second transparent conductive layer on the substrate;

etching the second transparent conductive layer, the metal conductive layer and the first transparent conductive layer to the surface of the substrate to form a first groove, wherein the area of the first groove corresponds to the light-transmitting area;

and forming a light-transmitting electrode layer in the first groove, wherein the light-transmitting electrode layer and the rest of the second transparent conductive layer, the metal conductive layer and the first transparent conductive layer are jointly used as the anode.

13. The method according to claim 12, wherein the forming of the light-transmitting electrode layer in the first trench includes:

filling a light-transmitting material layer in the first groove;

and etching the light-transmitting material layer to the surface of the substrate, wherein the rest light-transmitting material layer is used as the light-transmitting electrode layer.

14. The method of claim 11, wherein the forming an anode on the substrate comprises:

etching the second transparent conductive layer and the metal conductive layer to the surface of the first transparent conductive layer to form the light-transmitting area, wherein the first transparent conductive layer and the rest of the metal conductive layer and the second transparent conductive layer jointly serve as the anode.

15. The method of claim 11, wherein the forming an anode on the substrate comprises:

sequentially forming a first transparent conductive layer and a metal conductive layer on the substrate;

etching the first transparent conductive layer and the metal conductive layer to the surface of the substrate to form a second groove, wherein the area of the second groove corresponds to the light-transmitting area;

and forming a second transparent conductive layer in the second groove and on the surface of the metal conductive layer, wherein the first transparent conductive layer, the metal conductive layer and the second transparent conductive layer are used as the anode together.

16. A display screen, comprising:

a first display region provided with a plurality of light emitting elements according to any one of claims 1 to 11, the plurality of light emitting elements being arranged in an array;

and the second display area is arranged around the first display area.

17. An electronic device, comprising:

a light sensing device;

a display screen as defined in claim 16;