CN112268477A - Near-field radiation heat tuner based on direct-current voltage bias graphene - Google Patents
Near-field radiation heat tuner based on direct-current voltage bias graphene Download PDFInfo
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
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- G02B5/008—Surface plasmon devices
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
- F28D2021/0019—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
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Abstract
A near-field radiation thermal tuner based on direct-current voltage bias graphene. The present invention is in the field of thermal tuners. The invention aims to solve the technical problems that actual production cannot be provided and an electronic element is interfered by a strong magnetic field due to overlarge magnetic field intensity in the process of controlling near-field radiation heat exchange by actively controlling the magneto-optical effect of graphene by using the existing magnetic field. The near-field radiant heat tuner based on the direct-current voltage bias graphene is composed of a receiving end composite structure, an emitting end composite structure and a spacer arranged between the receiving end composite structure and the emitting end composite structure, wherein the receiving end composite structure is composed of a receiving end direct-current voltage generator, a receiving end substrate and a receiving end graphene coating; the transmitting terminal composite structure is composed of a transmitting terminal direct-current voltage generator, a transmitting terminal substrate and a transmitting terminal graphene coating. The tuner of the invention can generate strong regulation effect on the heat exchange capability of near-field radiation. Meanwhile, the adjustment based on the direct current does not interfere with other electronic components.
Description
Technical Field
The invention belongs to the field of thermal tuners, and particularly relates to a near-field radiant thermal tuner based on direct-current voltage bias graphene.
Background
Radiative heat transfer between two objects can be significantly enhanced by tunneling effects that bring them close to each other to provide an evanescent wave, compared to classical radiation. Since a large amount of heat flux is critical in the application of thermal tuners, efforts have been made to optimize and enhance such thermal tuners by controlling various material and structural parameters. In general, the general idea of thermal tuners is to adjust the surface state during heat transfer, since the main contribution to heat transfer comes from the surface state. For example, a structure (cBN, SiC, etc.) that adjusts a polar dielectric material supporting surface phonon polaritons or a structure (metal, semiconductor, etc.) that adjusts a system that can support surface plasmon polaritons is widely used in the development of near-field radiative thermal tuners. However, high loss characteristics in polar dielectric materials and metallic materials can undermine the superior performance of surface waves, thereby impairing the tuning capability of the thermal tuner.
Recently, based on the excellent optical properties of graphene, the use of graphene sheets in thermal tuners to find new ways to regulate radiative heat transfer has become a focus of research. Currently, the magnetic field is used for actively controlling the magneto-optical effect of graphene to actively control the near-field radiation heat exchange. But the required magnetic field intensity greatly exceeds the magnetic field intensity provided by actual production, and the strong magnetic field inevitably interferes with the use of other electronic components.
Disclosure of Invention
The invention aims to solve the technical problems that actual production cannot be provided due to overlarge magnetic field intensity and an electronic element is interfered by a strong magnetic field in the existing technology for controlling near-field radiation heat exchange by actively controlling the magneto-optical effect of graphene through the magnetic field, and the near-field radiation heat tuner based on the direct-current voltage bias graphene is provided.
The near-field radiant heat tuner based on the direct-current voltage bias graphene is composed of a receiving end composite structure, an emitting end composite structure and a spacer arranged between the receiving end composite structure and the emitting end composite structure, wherein a vacuum gap is formed between the receiving end composite structure and the emitting end composite structure through the spacer; the receiving end composite structure and the transmitting end composite structure are completely identical and are symmetrically arranged relative to the spacer, the receiving end composite structure is composed of a receiving end direct-current voltage generator, a receiving end substrate and a receiving end graphene coating, the receiving end graphene coating is plated on the lower surface of the receiving end substrate, and the receiving end direct-current voltage generator is connected with the receiving end graphene coating through a lead and a grid; the transmitting terminal composite structure is composed of a transmitting terminal direct-current voltage generator, a transmitting terminal substrate and a transmitting terminal graphene coating, wherein the transmitting terminal graphene coating is plated on the upper surface of the transmitting terminal substrate, and the transmitting terminal direct-current voltage generator is connected with the transmitting terminal graphene coating through a lead and a grid.
Further limiting, the voltage provided by the receiving end direct current voltage generator is 10V-800V.
Further, the voltage provided by the direct current voltage generator at the transmitting end is 10V-800V.
Further limiting, controlling the speed of the direct current drift current in the graphene coating of the receiving end to be 10 through the direct current voltage generator of the receiving end5m/s～9×105m/s。
Further limiting, controlling the speed of the DC drift current in the graphene coating of the transmitting terminal to be 10 by the DC voltage generator of the transmitting terminal5m/s～9×105m/s。
Further, the receiving end substrate and the emitting end substrate are made of the same material, and are made of one of a metal material, a material with metal properties, and a semiconductor material.
Further limiting, the graphene coating at the receiving end is single-layer graphene or multi-layer graphene, and the thickness of a single layer is 0.335 nm.
Further limiting, the graphene plating layer at the emission end is single-layer graphene or multi-layer graphene, and the thickness of a single layer is 0.335 nm.
Further, the single-layer graphene is prepared by a micro-mechanical lift-off method or an epitaxial growth method.
Further limiting, the single-layer graphene is plated on the surface of a corresponding substrate through magnetron sputtering, vacuum evaporation, sol-gel or pulsed laser deposition to form a receiving end graphene plating layer or an emitting end graphene plating layer.
Further limiting, the vertical distance between the receiving end composite structure and the transmitting end composite structure is 10 nm-50 nm.
Further, the spacer is a silicon cylinder array structure prepared by an etching method.
Compared with the prior art, the invention has the advantages that:
1) according to the invention, the characteristic that the plasma polarization of the graphene sheet can be adjusted by using direct current is introduced into the near-field thermal radiation to form a heat adjusting device, so that the near-field thermal radiation can be enhanced to a greater extent and the Planck blackbody radiation law is far exceeded.
2) The two-dimensional material composite heterostructure used by the near-field radiation thermal tuner disclosed by the invention supports the non-reciprocal surface plasmon with ultrahigh local state density, and the intensity of the coupling mode can be realized by changing the size of direct current voltage in the composite structure, so that the near-field radiation thermal tuner disclosed by the invention has relatively excellent near-field thermal radiation modulation capability.
3) According to the invention, a certain direct current is applied to the surface of the graphene, so that the graphene surface excimer can be converted from isotropic to extremely asymmetric anisotropic characteristics, the heat flow is changed, and a strong adjusting effect is generated on the surface excimer intensity and the near-field radiation heat exchange capacity. Meanwhile, the regulation means based on the direct current can not generate strong interference to other electronic components in the heat exchange system. And the direct current is more convenient to generate and control.
4) The transmitting end and the receiving end of the thermal tuner are parallel to each other. The distance between the two composite structures is in a micro-nano level, namely the micro-nano level is smaller than the characteristic wavelength of thermal radiation, the characteristic wavelength is 9.7 mu m when being 300K, the processing cost is possibly and rapidly increased due to the excessively small distance, and the plasmon polariton excited by the graphene has larger loss in vacuum due to the excessively large distance, so that the regulation effect of direct current on the graphene plasmon polariton is reduced, and the modulation capability of the direct current (direct current voltage) on the near-field radiation heat exchange is seriously hindered.
Drawings
Fig. 1 is a structural diagram of a near-field radiative heat tuner based on dc voltage biased graphene according to the present invention; 1-a receiving end direct current voltage generator, 2-a receiving end substrate, 3-a receiving end graphene coating, 4-a spacer and 5-an emitting end graphene coating; 6-emitting end substrate, 7-emitting end direct current voltage generator and 8-vacuum gap;
fig. 2 is a graph of the radiation heat transfer coefficient and the pitch dependence of the near-field radiative heat tuner based on dc voltage bias graphene according to embodiments one to five under different dc current speeds;
fig. 3 is a graph of spectral radiant heat transfer coefficient of a near-field radiant heat tuner based on dc voltage bias graphene at different dc current speeds according to a first embodiment; wherein the 1-drift-free current and the 2-current speed are 3 multiplied by 105m/s, 3-current speed of 6X 105m/s, 4-current speed of 9X 105m/s。
Detailed Description
Embodiment one (see fig. 1): the near-field radiation thermal tuner based on the direct-current voltage bias graphene in the embodiment is composed of a receiving end composite structure, an emitting end composite structure and a spacer 4 arranged between the receiving end composite structure and the emitting end composite structure, wherein a vacuum gap 8 is formed between the receiving end composite structure and the emitting end composite structure through the spacer 4; the receiving end composite structure and the transmitting end composite structure are completely identical and are symmetrically arranged relative to the spacer 4, the receiving end composite structure is composed of a receiving end direct current voltage generator 1, a receiving end substrate 2 and a receiving end graphene coating 3, the receiving end graphene coating 3 is coated on the lower surface of the receiving end substrate 2, and the receiving end direct current voltage generator 1 is connected with the receiving end graphene coating 3 through a lead and a grid; the transmitting terminal composite structure is composed of a transmitting terminal direct-current voltage generator 7, a transmitting terminal substrate 6 and a transmitting terminal graphene coating 5, wherein the transmitting terminal graphene coating 5 is coated on the upper surface of the transmitting terminal substrate 6, and the transmitting terminal direct-current voltage generator 7 is connected with the transmitting terminal graphene coating 5 through a lead and a grid; the transmitting end is used as a heat source; the receiving end is used as a cold source;
the receiving end direct currentThe voltage provided by the voltage generator 1 and the transmitting end direct current voltage generator 7 is 10V-800V; controlling the speed of the DC drift current in the graphene coating 3 of the receiving end to be 10 by the DC voltage generator 1 of the receiving end5m/s～9×105m/s; controlling the speed of the DC drift current in the graphene coating 5 of the transmitting terminal to be 10 by the DC voltage generator 7 of the transmitting terminal5m/s～9×105m/s；
The receiving end substrate 2 and the transmitting end substrate 6 are made of the same material and are both intrinsic silicon substrates;
the receiving end graphene coating 3 is single-layer graphene, the thickness of a single layer is 0.335nm, the single-layer graphene is prepared through a micro-mechanical stripping method, and then the single-layer graphene is coated on the surface of the receiving end substrate 2 through magnetron sputtering to form the receiving end graphene coating 3;
the transmitting end graphene coating 5 is single-layer graphene, the thickness of a single layer is 0.335nm, the single-layer graphene is prepared through a micro-mechanical stripping method, and then the single-layer graphene is coated on the surface of a transmitting end substrate 6 through magnetron sputtering to form the transmitting end graphene coating 5;
the vertical distance between the receiving end composite structure and the transmitting end composite structure is 10nm, namely the height of the spacer 4; the spacer 4 is a silicon cylinder array with the height of 10nm, which is manufactured by deep ultraviolet lithography and reactive ion etching technology.
The second embodiment is as follows: the first difference between the present embodiment and the specific embodiment is: the vertical distance between the receiving end composite structure and the emitting end composite structure is 20nm, i.e. the height of the spacer 4, and the other steps and parameters are the same as those in the first embodiment.
The third concrete implementation mode: the first difference between the present embodiment and the specific embodiment is: the vertical distance between the receiving end composite structure and the emitting end composite structure is 30nm, i.e. the height of the spacer 4, and the other steps and parameters are the same as those in the first embodiment.
The fourth concrete implementation mode: the first difference between the present embodiment and the specific embodiment is: the vertical distance between the receiving end composite structure and the emitting end composite structure is 40nm, i.e. the height of the spacer 4, and the other steps and parameters are the same as those in the first embodiment.
The fifth concrete implementation mode: the first difference between the present embodiment and the specific embodiment is: the vertical distance between the receiving end composite structure and the emitting end composite structure is 50nm, i.e. the height of the spacer 4, and the other steps and parameters are the same as those in the first embodiment.
In this embodiment, when a direct current is applied to the graphene, the surface plasmon excited by the graphene itself will be dragged by the direct current to form an extreme asymmetric characteristic, and the wave vector range of the plasmon will be greatly increased. Meanwhile, direct current also well changes the Landau damping of the graphene, so that stronger surface plasmon intensity is excited. Therefore, with the increasing current speed in the direct current, the radiation heat exchange capacity of the system can be increased strongly. It can therefore be seen from fig. 3 that the peak value of the spectral radiant heat flux of the bolometer will rise continuously as the current speed increases. Thus, as can be seen from fig. 2, when the vacuum distance between the receiving end graphene plating layer 3 and the transmitting end graphene plating layer 5 is 10nm, the radiation heat exchange capability of the near-field radiation heat tuner can be realized from 20000Wm by adjusting the current speed of the direct current in the graphene-2K-1To 50000Wm-2K-1Wide range adjustment within the range. So that a good regulation of the radiative heat transfer is obtained. Meanwhile, the good radiation regulation capability can be well maintained in the range of 10nm-30nm of the vacuum space 8.
In summary, the near-field radiation thermal tuner based on the direct-current voltage bias graphene provided by the invention exchanges heat through near-field radiation, and utilizes the characteristic that direct current can convert graphene surface plasmons into surface non-reciprocal plasmons, so that the heat exchange capability of the near-field radiation thermal tuner can obtain obvious change by adjusting the current speed of the direct current through the characteristic that the respective surface plasmons have different contributions to the near-field radiation heat exchange, and the near-field radiation thermal tuner can provide the radiation heat exchange adjustment capability in a larger range. Meanwhile, the near-field radiation thermal tuner based on the direct-current voltage bias graphene has the advantages of no power consumption, no moving part, light weight and the like, and is particularly suitable for various micro thermal circuits.
Claims (10)
1. A near-field radiation thermal tuner based on direct-current voltage bias graphene is characterized by comprising a receiving end composite structure, an emitting end composite structure and a spacer (4) arranged between the receiving end composite structure and the emitting end composite structure, wherein a vacuum gap (8) is formed between the receiving end composite structure and the emitting end composite structure through the spacer (4); the receiving end composite structure and the transmitting end composite structure are completely identical and are symmetrically arranged relative to the spacer (4), the receiving end composite structure is composed of a receiving end direct-current voltage generator (1), a receiving end substrate (2) and a receiving end graphene coating (3), the receiving end graphene coating (3) is coated on the lower surface of the receiving end substrate (2), and the receiving end direct-current voltage generator (1) is connected with the receiving end graphene coating (3) through a lead and a grid; the transmitting terminal composite structure is composed of a transmitting terminal direct-current voltage generator (7), a transmitting terminal substrate (6) and a transmitting terminal graphene coating (5), wherein the transmitting terminal graphene coating (5) is coated on the upper surface of the transmitting terminal substrate (6), and the transmitting terminal direct-current voltage generator (7) is connected with the transmitting terminal graphene coating (5) through a lead and a grid.
2. The near-field radiative thermal tuner based on direct current voltage bias graphene of claim 1, wherein the voltage provided by the receiving end direct current voltage generator (1) and the transmitting end direct current voltage generator (7) is 10V-800V.
3. The near-field radiative thermal tuner based on dc voltage biased graphene of claim 1, wherein the dc drift current speed in the graphene coating (3) of the receiving end is controlled to 10 by the receiving end dc voltage generator (1)5m/s～9×105m/s, controlling the speed of the direct current drift current in the graphene coating (5) of the transmitting end to be 10 through the direct current voltage generator (7) of the transmitting end5m/s～9×105m/s。
4. The near-field radiative thermal tuner based on dc voltage biased graphene of claim 1, wherein the receiving-end substrate (2) and the emitting-end substrate (6) are made of the same material, and are made of one of a metal material, a material with metal properties, and a semiconductor material.
5. The near-field radiative thermal tuner based on dc voltage biased graphene of claim 1, wherein the receiving-end graphene coating (3) is single-layer graphene or multi-layer graphene, with a single-layer thickness of 0.335 nm.
6. The near-field radiative thermal tuner based on dc voltage biased graphene of claim 1, wherein the emitter graphene coating (5) is single-layer graphene or multi-layer graphene, with a single-layer thickness of 0.335 nm.
7. The near-field radiative heat tuner of claim 5 or 6, wherein the single-layer graphene is fabricated by micro-mechanical lift-off or epitaxial growth.
8. The near-field radiative thermal tuner based on direct current voltage biased graphene of claim 5 or 6, wherein the single-layer graphene is plated on the corresponding substrate surface by magnetron sputtering, vacuum evaporation, sol-gel or pulsed laser deposition to form the receiving-end graphene plating layer (3) or the emitting-end graphene plating layer (5).
9. The near-field radiative thermal tuner based on dc voltage biased graphene of claim 1, wherein the vertical separation of the receiving-end composite structure and the transmitting-end composite structure is between 10nm and 50 nm.
10. The near-field radiation thermal tuner based on direct-current voltage bias graphene as claimed in claim 1, wherein the spacer (4) is a silicon cylindrical array structure manufactured by an etching method.
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Cited By (1)
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