CN112234142A - High-power radio-frequency semiconductor integrated resistor and semiconductor chip - Google Patents
High-power radio-frequency semiconductor integrated resistor and semiconductor chip Download PDFInfo
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- CN112234142A CN112234142A CN202011461676.2A CN202011461676A CN112234142A CN 112234142 A CN112234142 A CN 112234142A CN 202011461676 A CN202011461676 A CN 202011461676A CN 112234142 A CN112234142 A CN 112234142A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 95
- 239000003990 capacitor Substances 0.000 claims abstract description 50
- 230000000694 effects Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 4
- 230000003071 parasitic effect Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
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- 230000007423 decrease Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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Abstract
The invention provides a high-power radio-frequency semiconductor integrated resistor and a semiconductor chip, which relate to the field of semiconductor devices and are arranged on a semiconductor chip, wherein the semiconductor chip comprises a signal input end, a signal output end, a resistor layer and an equivalent capacitor structure; the equivalent capacitor structure is used for shunting, the equivalent capacitor structure is added at the signal input end of the high-power radio-frequency semiconductor integrated resistor, so that the current density flowing through the resistor at the input end is reduced, the radio-frequency signal bearing capacity and the over-current capacity of the high-power radio-frequency semiconductor integrated resistor are improved, and the reliability of a semiconductor chip is ensured.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a high-power radio-frequency semiconductor integrated resistor and a semiconductor chip.
Background
High power radio frequency semiconductor integrated resistors on current semiconductor chips generally comprise a resistive layer 3 deposited on a substrate 4, with signal input 2, signal output 1 and ground 5, as shown in fig. 1. The overcurrent capability of the high-power radio-frequency semiconductor integrated resistor is weak due to the limitation of the thickness of the resistor layer.
In addition, because the high-power radio-frequency semiconductor integrated resistor on the chip can generate the influence of parasitic capacitance to the ground, when the high-power radio-frequency semiconductor integrated resistor has larger resistance and receives higher radio-frequency signals sent by the chip, the current density of the signal input end of the resistor is overlarge and exceeds the allowable range of the resistor process, thereby influencing the stable reliability of the semiconductor chip.
Disclosure of Invention
In view of the above, the present invention provides a high power rf semiconductor integrated resistor and a semiconductor chip, in which an equivalent capacitor structure is added at a signal input end of the high power rf semiconductor integrated resistor, so as to reduce the current density flowing through the resistor at the input end, increase the rf signal carrying capacity and the overcurrent capacity of the high power rf semiconductor integrated resistor, and ensure the reliability of the semiconductor chip.
In a first aspect, an embodiment of the present invention provides a high power radio frequency semiconductor integrated resistor, which is disposed on a semiconductor chip and includes a signal input terminal, a signal output terminal, a resistive layer, and an equivalent capacitor structure, where the resistive layer is disposed between the signal input terminal and the signal output terminal, and the equivalent capacitor structure is connected to the signal input terminal;
the equivalent capacitance structure is used for shunting.
With reference to the first aspect, an embodiment of the present invention provides a first possible implementation manner of the first aspect, where the first possible implementation manner is disposed at one end of a substrate of a semiconductor chip, and the other end of the substrate is grounded.
With reference to the first aspect, an embodiment of the present invention provides a second possible implementation manner of the first aspect, where the signal input end includes a first signal input end, a second signal input end, and a third signal input end, and the equivalent capacitor structure includes a first external capacitor and a second external capacitor;
the second signal input terminal and the third signal input terminal are disposed between the first signal input terminal and the signal output terminal, and the resistive layer is disposed between the first signal input terminal and the second signal input terminal, and between the third signal input terminal and the signal output terminal;
one end of the first external capacitor is connected with the first signal access end, and the other end of the first external capacitor is connected with the second signal access end;
one end of the second external capacitor is connected with the second signal access end, and the other end of the second external capacitor is connected with the third signal access end.
With reference to the first aspect, an embodiment of the present invention provides a third possible implementation manner of the first aspect, wherein the metal layer at one end of the signal input end is elongated along a direction parallel to the resistive layer, and the metal layer and the resistive layer form the equivalent capacitance structure.
With reference to the first aspect, an embodiment of the present invention provides a fourth possible implementation manner of the first aspect, where the signal input end and the signal output end are made of a metal material.
With reference to the first aspect, an embodiment of the present invention provides a fifth possible implementation manner of the first aspect, where a metal material is added to one end of the signal input end along a direction parallel to the resistive layer to obtain the equivalent capacitor structure.
With reference to the first aspect, an embodiment of the present invention provides a sixth possible implementation manner of the first aspect, wherein the resistivity of the resistive layer is lower than a preset resistivity threshold.
With reference to the first aspect, an embodiment of the present invention provides a seventh possible implementation manner of the first aspect, where the semiconductor chip further includes a discrete resistance device disposed outside the semiconductor chip, and the discrete resistance device is configured to share an overcurrent.
In a second aspect, the embodiment of the present invention provides a semiconductor chip, which includes the high power radio frequency semiconductor integrated resistor as described above.
The embodiment of the invention provides a high-power radio-frequency semiconductor integrated resistor and a semiconductor chip, wherein an equivalent capacitor structure for shunting is added on a signal input end of the high-power radio-frequency semiconductor integrated resistor, so that a ground parasitic capacitance effect generated by an equivalent circuit of the high-power radio-frequency semiconductor integrated resistor is relieved, namely when the current density of the signal input end is overlarge due to the parasitic capacitance effect, shunting can be performed through the equivalent capacitor structure, and further the high-power radio-frequency semiconductor integrated resistor provided by the embodiment of the invention can bear larger radio-frequency signals, and the reliability of the semiconductor chip is further ensured.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a cross-sectional view of a conventional high power RF semiconductor integrated resistor on a semiconductor chip;
FIG. 2 is a schematic cross-sectional equivalent circuit diagram of a conventional high power RF semiconductor integrated resistor on a semiconductor chip;
fig. 3 is a schematic diagram of a high power rf semiconductor integrated resistor structure according to an embodiment of the present invention;
fig. 4 is a schematic cross-sectional equivalent circuit diagram of a high power rf semiconductor integrated resistor structure according to an embodiment of the present invention;
fig. 5 is a schematic cross-sectional equivalent circuit diagram of another high power rf semiconductor integrated resistor structure according to an embodiment of the present invention.
Icon: 1-a signal output; 2-a signal input; 21-a first signal input; 22-a second signal input; 23-a third signal input; 3-a resistive layer; 4-a substrate; 5-grounding end; 6-parasitic capacitance; 7-equivalent capacitance structure.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
At present, the high-power radio-frequency semiconductor integrated resistor on a semiconductor chip has weak overcurrent capability due to the limitation of the thickness of the resistor layer. Referring to fig. 2, a high power rf semiconductor integrated resistor on a semiconductor chip typically includes a resistive layer 3 deposited on a substrate, with a signal input 2 and a signal output 1, the high power rf semiconductor integrated resistor on the chip to ground will have the effect of a parasitic capacitance 6, which is a distributed series resistance and parallel capacitance ladder.
When the resistance value of the resistor is larger (kilohm level) and the radio-frequency signal passing through the resistor is higher (GHz level), the impedance of a signal input end can be increased by the parasitic capacitor to the ground firstly, so that the input current is increased under the same radio-frequency signal intensity, namely the radio-frequency signal intensity born by the high-power radio-frequency semiconductor integrated resistor is lowered; secondly, due to the effect of the parasitic capacitance 6 to ground, part of the current flows to ground through the parasitic capacitance, so that the current density in the resistor decreases from the input end to the output end, i.e. the overcurrent capacity is low. The two effects can cause the current density at the resistor signal input end to be too large, and exceed the allowable range of the resistor process.
Based on this, according to the high-power radio-frequency semiconductor integrated resistor and the semiconductor chip provided by the embodiment of the invention, the equivalent capacitor structure is added at the signal input end of the high-power radio-frequency semiconductor integrated resistor, so that the current density flowing through the resistor at the input end is reduced, the radio-frequency signal carrying capacity and overcurrent capacity of the high-power radio-frequency semiconductor integrated resistor are increased, and the reliability of the semiconductor chip is ensured.
The following is a detailed description by way of example.
Fig. 3 is a schematic structural diagram of a high power rf semiconductor integrated resistor according to an embodiment of the present invention.
As shown in fig. 3, an embodiment of the present invention provides a high power radio frequency semiconductor integrated resistor, which is disposed on a semiconductor chip, and includes a signal input end 2, a signal output end 1, a resistive layer 3, and an equivalent capacitor structure 7, where the resistive layer 3 is disposed between the signal input end 2 and the signal output end 1, and the equivalent capacitor structure 7 is connected to the signal input end 2;
the equivalent capacitive structure 7 is used for shunting.
In a preferred embodiment of practical application, an equivalent capacitor structure 7 for shunting is added on the signal input end 2 of the high-power radio-frequency semiconductor integrated resistor, so that a parasitic capacitance effect to the ground generated by the high-power radio-frequency semiconductor integrated resistor equivalent circuit is relieved, that is, when the current density of the signal input end 2 is too high due to the parasitic capacitance effect, shunting can be performed through the equivalent capacitor structure 7, and further, the high-power radio-frequency semiconductor integrated resistor provided by the embodiment of the invention can bear larger radio-frequency signals, so that the reliability of a semiconductor chip is further ensured.
Here, the equivalent capacitance structure 7 includes a capacitance element itself and a structure capable of being equivalent to a capacitance.
The embodiment of the invention improves the high-power radio-frequency semiconductor integrated resistor on the traditional semiconductor chip. An additional shunt capacitor, or equivalently a capacitor, is added near the signal input 2 to reduce the current density flowing through the resistor at the input, thereby increasing the over-current capability of the resistor.
As an alternative embodiment, the equivalent capacitor structure 7 added near the signal input terminal 2 can be stacked on the resistor layer 3 without occupying additional chip area, that is, the equivalent capacitor structure 7 is disposed on the high power rf semiconductor integrated resistor, and the projection of the equivalent capacitor structure 7 does not exceed the projection range of the high power rf semiconductor integrated resistor.
In some embodiments, wherein one end of the substrate 4 of the semiconductor chip is disposed, the other end of the substrate 4 is a ground terminal 5.
In some embodiments, as shown in fig. 4, wherein the signal input terminal 2 includes a first signal input terminal 21, a second signal input terminal 22 and a third signal input terminal 23, the equivalent capacitor structure 7 includes a first external capacitor and a second external capacitor;
said second signal input terminal 22 and said third signal input terminal 23 are arranged between said first signal input terminal 21 and said signal output terminal 1, and said resistive layer 3 is arranged between said first signal input terminal 21 and said second signal input terminal 22, and between said third signal input terminal 23 and said signal output terminal 1;
one end of the first external capacitor is connected with the first signal access end, and the other end of the first external capacitor is connected with the second signal access end;
one end of the second external capacitor is connected with the second signal access end, and the other end of the second external capacitor is connected with the third signal access end.
Here, the equivalent capacitor structure 7 in fig. 4 in the embodiment of the present invention is two external capacitors to achieve the purpose of shunting the signal input terminal 2.
It should be noted that the external capacitor according to the embodiment of the present invention includes a plurality of capacitors, which can be set according to actual situations, and fig. 4 is only an exemplary example.
As another alternative embodiment, as shown in fig. 5, wherein one end of the signal input terminal 2 is elongated along a direction parallel to the resistive layer, the equivalent capacitance structure 7 is the signal input terminal 2 generating an equivalent capacitance effect with the resistive layer.
In some embodiments, the metal layer at one end of the signal input terminal 2 is elongated in a direction parallel to the resistive layer, and the metal layer and the resistive layer form the equivalent capacitance structure 7.
It should be noted that, a plurality of equivalent capacitances can be equivalently obtained between the extended signal input end 2 and the resistive layer to counteract the negative effect caused by the non-uniform distribution of the radio frequency signal current due to the parasitic capacitance from the resistive layer itself to the substrate.
It is understood that the signal input terminal 2 and the signal output terminal 1 in this application are made of metal.
In some embodiments, the equivalent capacitor structure 7 is obtained by adding a metal material to one end of the signal input terminal 2 along a direction parallel to the resistive layer 3.
In some embodiments, wherein the resistivity of the resistive layer is below a preset resistivity threshold.
The high-power radio-frequency semiconductor integrated resistor process with lower resistivity is used for helping to reduce the influence of the parasitic capacitance to the ground, so that a lower resistivity threshold is obtained through a preliminary test, and the high-power radio-frequency semiconductor integrated resistor is produced and laid according to the preset resistivity threshold; meanwhile, the overcurrent capacity of the high-power radio frequency semiconductor integrated resistor process with lower resistivity is also stronger.
However, such a high power rf semiconductor integrated resistor process may occupy a large chip area, i.e., the width of the high power rf semiconductor integrated resistor may be increased.
In some embodiments, it is also desirable to increase the width of the resistor, and in the case of an rf chip, the application of the large resistor on the rf chip is mainly dc-to-ac, such as providing a bias voltage to the switch and the amplifier. A similar effect can be achieved using integrated inductors, but occupying a larger area of the semiconductor chip.
In addition to the defect of a larger area of the semiconductor chip, increasing the resistance width correspondingly increases the parasitic capacitance, thereby further reducing the impedance of the signal input terminal and further increasing the input current.
Here, although the semiconductor chip high power rf semiconductor integrated resistor has limited overcurrent capability, the discrete device resistor can withstand large currents. In some application scenarios without considering the overall area of the circuit, the critical resistor can be placed outside the chip, and a discrete resistor device (such as a chip SMD resistor on a multi-layer board) is used to mitigate the effect of parasitic capacitance due to the increased resistor width.
In some embodiments, the present invention further provides a semiconductor chip, including the high power radio frequency semiconductor integrated resistor as described above.
Through three-dimensional electromagnetic simulation verification, the embodiment of the invention can obviously reduce the maximum current density (generated in a resistor area close to a signal input end) of the high-power radio-frequency semiconductor integrated resistor on the chip under the same radio-frequency signal intensity. That is to say, the application can obviously improve the over-current capability of the radio frequency signal of the high-power radio frequency semiconductor integrated resistor on the chip and increase the reliability of the chip.
In the description of the embodiments of the present invention, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the several embodiments provided in the present application, it should be understood that the disclosed system, apparatus and method may be implemented in other ways. The above-described embodiments of the apparatus are merely illustrative, and for example, the division of the units is only one logical division, and there may be other divisions when actually implemented, and for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection of devices or units through some communication interfaces, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit.
Finally, it should be noted that: the above-mentioned embodiments are only specific embodiments of the present invention, which are used for illustrating the technical solutions of the present invention and not for limiting the same, and the protection scope of the present invention is not limited thereto, although the present invention is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: any person skilled in the art can modify or easily conceive the technical solutions described in the foregoing embodiments or equivalent substitutes for some technical features within the technical scope of the present disclosure; such modifications, changes or substitutions do not depart from the spirit and scope of the embodiments of the present invention, and they should be construed as being included therein.
Claims (8)
1. A high-power radio-frequency semiconductor integrated resistor is characterized by being arranged on a semiconductor chip and comprising a signal input end, a signal output end, a resistor layer and an equivalent capacitor structure, wherein the resistor layer is arranged between the signal input end and the signal output end, and the equivalent capacitor structure is connected with the signal input end;
the equivalent capacitor structure is used for shunting;
the signal input end comprises a first signal input end, a second signal input end and a third signal input end, and the equivalent capacitor structure comprises a first external capacitor and a second external capacitor;
the second signal input terminal and the third signal input terminal are disposed between the first signal input terminal and the signal output terminal, and the resistive layer is disposed between the first signal input terminal and the second signal input terminal, and between the third signal input terminal and the signal output terminal;
one end of the first external capacitor is connected with the first signal access end, and the other end of the first external capacitor is connected with the second signal access end;
one end of the second external capacitor is connected with the second signal access end, and the other end of the second external capacitor is connected with the third signal access end.
2. The high-power radio-frequency semiconductor integrated resistor as claimed in claim 1, wherein the high-power radio-frequency semiconductor integrated resistor is arranged at one end of a substrate of a semiconductor chip, and the other end of the substrate is grounded.
3. The high-power radio-frequency semiconductor integrated resistor according to claim 1 or 2, wherein one end of the signal input terminal is elongated in a direction parallel to the resistive layer, and the equivalent capacitance structure is a signal input terminal generating an equivalent capacitance effect with the resistive layer.
4. The high power radio frequency semiconductor integrated resistor according to claim 1, wherein the signal input terminal and the signal output terminal are made of metal.
5. The high power radio frequency semiconductor integrated resistor according to claim 3, wherein a metal material is added to one end of the signal input terminal along a direction parallel to the resistive layer to obtain the equivalent capacitor structure.
6. The high power radio frequency semiconductor integrated resistor according to claim 1, wherein the resistivity of the resistive layer is below a predetermined resistivity threshold.
7. The high power radio frequency semiconductor integrated resistor of claim 6, further comprising a discrete resistor device disposed outside the semiconductor chip for sharing over current.
8. A semiconductor chip comprising a high power radio frequency semiconductor integrated resistor according to any of claims 1-7.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6143465A (en) * | 1984-08-08 | 1986-03-03 | Hitachi Ltd | Semiconductor device |
| US6472942B1 (en) * | 2000-08-21 | 2002-10-29 | Em (Us) Design, Inc. | Parasitically compensated resistor for integrated circuits |
| CN1495909A (en) * | 2002-08-29 | 2004-05-12 | ���µ�����ҵ��ʽ���� | Bipolar transistor and its mfg. method |
| CN102684616A (en) * | 2012-05-09 | 2012-09-19 | 惠州市正源微电子有限公司 | Radio frequency power amplifier realized by using CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process |
| CN103633062A (en) * | 2012-08-24 | 2014-03-12 | 稳懋半导体股份有限公司 | Compound semiconductor integrated circuit |
| CN109920789A (en) * | 2017-12-13 | 2019-06-21 | 富士电机株式会社 | Resistive element and its manufacturing method |
| CN111540712A (en) * | 2020-04-26 | 2020-08-14 | 深圳市汇芯通信技术有限公司 | Integrated device manufacturing method and related product |
-
2020
- 2020-12-14 CN CN202011461676.2A patent/CN112234142B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6143465A (en) * | 1984-08-08 | 1986-03-03 | Hitachi Ltd | Semiconductor device |
| US6472942B1 (en) * | 2000-08-21 | 2002-10-29 | Em (Us) Design, Inc. | Parasitically compensated resistor for integrated circuits |
| CN1495909A (en) * | 2002-08-29 | 2004-05-12 | ���µ�����ҵ��ʽ���� | Bipolar transistor and its mfg. method |
| CN102684616A (en) * | 2012-05-09 | 2012-09-19 | 惠州市正源微电子有限公司 | Radio frequency power amplifier realized by using CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process |
| CN103633062A (en) * | 2012-08-24 | 2014-03-12 | 稳懋半导体股份有限公司 | Compound semiconductor integrated circuit |
| CN109920789A (en) * | 2017-12-13 | 2019-06-21 | 富士电机株式会社 | Resistive element and its manufacturing method |
| CN111540712A (en) * | 2020-04-26 | 2020-08-14 | 深圳市汇芯通信技术有限公司 | Integrated device manufacturing method and related product |
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Denomination of invention: High power RF semiconductor integrated resistors and semiconductor chips Effective date of registration: 20231101 Granted publication date: 20210302 Pledgee: Nanjing Branch of Jiangsu Bank Co.,Ltd. Pledgor: Nanjing yuanluoxin Technology Co.,Ltd. Registration number: Y2023980063290 |