CN112230081B - Equivalent LET calculation method for pulse laser single event effect test - Google Patents
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Abstract
The application discloses a pulse laser single event effect test equivalent LET calculation method. According to the calculation method, when the electric charge deposited by pulse laser and heavy ions in the sensitive volume of the device is equal, the single event effect caused by the pulse laser and the heavy ions on the device is equivalent, and the deposited electric charge Q generated by the pulse laser incident device is calculated L The sensitivity depth z of the device is obtained through a pulse laser test, and then the pulse laser equivalent LET is as follows: LET (LET) L [MeV·cm 2 /mg]＝(E p /ρ)×Q L [pC]/z[μm]. The application realizes the equivalent evaluation of the single event effect radiation hazard of the pulse laser and the heavy ion to the device, and further expands the application of the pulse laser in the aspect of the satellite anti-radiation reinforcement technology.
Description
Technical Field
The application relates to the technical field of space radiation effect and reinforcement, in particular to an equivalent LET calculation method for a pulse laser single event effect test.
Background
Compared with the heavy ion test, the pulse laser has the advantages of low cost, easy repeated operation, no radiation hazard and the like, and becomes a favorable substitute for the single event effect heavy ion test. Studies have shown that pulsed lasers can induce single event effects through Single Photon Absorption (SPA) and Two Photon Absorption (TPA) to obtain spatial and temporal information characterizing the single event effects. The parameters of the single event effect resistance evaluation of the existing device are based on heavy ion tests, and how to equivalent the test result of the pulse laser to the heavy ion test result, so that the pulse laser result can be directly compared with the heavy ion result, and the method is a hot spot and a difficult point of the current single event effect test research of the pulse laser.
Currently, the general method of determining the pulse laser equivalent LET is a purely empirical method based on pulsed laser energy and heavy ion LET tests that result in the same circuit response of the device. Although the method of the equivalent heavy ion LET of the experimental pulse laser has certain practicability, the method is closely related to some specific test parameters, the analysis process is complicated, and slight changes of the test parameters can cause the deviation of the equivalent LET calculation, so that the calculation is inaccurate; meanwhile, the pulse laser and heavy ion induced charge distribution is input into a device with specific physical characteristics to analyze single event effect response, a large amount of test data and device process data are needed, time and labor are consumed, and devices with different process types need to be reconstructed into a device model for repeated work.
In contrast, quantitative analysis methods that convert pulsed laser energy to equivalent LET by comparing the deposited charge generated by analyzing pulsed laser and heavy ion induction are more common and viable equivalent analysis means. However, there are many difficulties in obtaining this quantitative analysis-based pulse laser equivalent LET relationship, especially in the process of TPA-induced single event effect, the accurate characteristics of pulse laser propagation into the device, and the accurate calculation of charge deposition under given test parameters, all affect the quantitative analysis results. Therefore, a pulse laser equivalent LET calculation method based on quantitative analysis of pulse laser and heavy ion induced deposition charge is provided based on a laser micro dose and numerical analysis method.
Disclosure of Invention
The application mainly aims at solving the equivalent problem of pulse laser energy and heavy ion LET in a pulse laser single event effect test, and provides a method for calculating pulse laser equivalent LET based on quantitative analysis of deposited charge quantity.
In order to achieve the above purpose, the embodiment of the application provides a pulse laser single event effect test equivalent LET calculation method.
According to the pulse laser single event effect test equivalent LET calculation method, the equivalent LET is calculated according to the pulse laser L In the calculation, when the charge amount of the pulse laser and the charge amount of the heavy ions deposited in the sensitive volume of the device are equal, the single event effect caused by the pulse laser and the heavy ions to the device is equivalent, and the method comprises the following steps:
(1) Determining the sensitive area of the device according to the size of the DUT;
(2) Determining a sensitive depth z through z-direction scanning of a pulse laser test;
(3) Determining a sensitive volume according to the sensitive area and the sensitive depth;
(4) Calculating carrier distribution density in the analysis device;
(5) Integrating the carrier distribution density in the sensitive volume of the RPP parallelepiped model to obtain a deposited charge Q L ；
(6) Equivalent LET when pulse laser induces single event effect L The values of (2) are:
LET L [MeV·cm 2 /mg]＝(E p /ρ)×Q L [pC]/z[μm]
in which Q L Is a laser induced deposition charge within a sensitive volume; e (E) p Is the average energy in the material that creates an electron-hole pair: ρ is the density of the material on which the laser is incident.
Alternatively, the geometry of the sensing volume is parallelepiped and the charge collection within the sensing volume is uniform.
Alternatively, when the charge collection depth of the device under test DUT is determined, the sensitivity depth z is determined by the geometry of the device under test.
Alternatively, when the sensitivity depth z of the device under test is not well defined, the sensitivity depth z is given by the charge collection test data of the heavy ions.
Optionally, heavy ion deposit charge Q HI And try outThe relationship between the collected charges observed in the experiment is:
Q HI ＝LET HI ×z
the sensitive depth z is Q HI For LET HI Is a slope of (2).
Alternatively, the material of the device under test DUT may include silicon, gallium arsenide, silicon carbide, or gallium nitride.
In the method for calculating the equivalent LET of the single event effect test of the pulse laser, provided by the embodiment of the application, the RPP model of the equivalent LET is constructed, deposited charges generated by the induction of the pulse laser are quantitatively analyzed, heavy ions and the charges generated by the induction of the pulse laser are comparatively analyzed, the equivalent LET value of the pulse laser is obtained, the equivalent evaluation of the radiation hazard of the pulse laser and the heavy ions to the single event effect of the device is realized, and the application of the pulse laser in the aspect of the satellite anti-radiation reinforcement technology is further expanded.
By adopting the pulse laser single event effect test equivalent LET calculation method provided by the application, the pulse laser equivalent LET value which is identical with the heavy ion test can be obtained by utilizing the RPP model of the equivalent LET based on the premise that the deposited charges of the pulse laser and the heavy ion in the sensitive volume are equal, and on one hand, the data reference can be provided for the heavy ion test parameter selection; on the other hand, the single event effect sensitivity of the device is preliminarily determined, a reference is provided for screening and radiation-resistant reinforcement design of the satellite device, and engineering application of the pulse laser in the satellite radiation-resistant reinforcement design is further expanded.
Detailed Description
In order that those skilled in the art will better understand the present application, a more complete description of the present application will be provided below in conjunction with the embodiments of the present application, and it is evident that the described embodiments are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and in the claims are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe the embodiments of the application herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed or inherent to such process, method, article, or apparatus.
In the present application, the terms "upper", "lower", "inner", "middle", "outer", "front", "rear", and the like indicate an azimuth or a positional relationship based on the present application. These terms are only used to better describe the present application and its embodiments and are not intended to limit the scope of the indicated devices, elements or components to the particular orientations or to configure and operate in the particular orientations.
Also, some of the terms described above may be used to indicate other meanings in addition to orientation or positional relationships, for example, the term "upper" may also be used to indicate some sort of attachment or connection in some cases. The specific meaning of these terms in the present application will be understood by those of ordinary skill in the art according to the specific circumstances.
Furthermore, the terms "disposed," "connected," "configured," and "connected" are to be construed broadly. For example, "connected" may be in a fixed connection, a removable connection, or a unitary construction; may be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements, or components. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other. The present application will be described in detail with reference to examples.
According to the pulse laser single event effect test equivalent LET calculation method, the equivalent LET is calculated according to the pulse laser L In the calculation, when the charge amount of the pulse laser and the charge amount of the heavy ions deposited in the sensitive volume of the device are equal, the single event effect caused by the pulse laser and the heavy ions to the device is equivalent, and the method comprises the following steps:
(1) Determining the sensitive area of the device according to the size of the DUT;
(2) Determining a sensitive depth z through z-direction scanning of a pulse laser test;
(3) Determining a sensitive volume according to the sensitive area and the sensitive depth;
(4) Calculating carrier distribution density in the analysis device;
(5) Integrating the carrier distribution density in the sensitive volume of the RPP parallelepiped model to obtain a deposited charge Q L ；
(6) Equivalent LET when pulse laser induces single event effect L The values of (2) are:
LET L [MeV·cm 2 /mg]＝(E p /ρ)×Q L [pC]/z[μm]
in which Q L Is a laser induced deposition charge (subscript L indicates "laser") within the sensitive volume; e (E) p Is the average energy in the material that generates an electron-hole pair, e.g., a value of 3.6eV in a silicon material; ρ is the density of the material on which the laser is incident in g/cm 3 。
The method of the embodiment of the application can obtain the equivalent LET of the pulse laser by the deposited charge of the pulse laser in the device, can provide a reference basis for the selection of the heavy ion test condition of the device, and can also provide input parameters for the equivalence analysis of the pulse laser and the heavy ion test.
In particular, in some embodiments of the application, the geometry of the sensing volume is parallelepiped and charge collection within the sensing volume is uniform.
Sensitive volume of DUT to Q L And LET (LET) L Is critical for the calculation of (a)The upper and lower limits of carrier distribution density (CD) integration operations are defined, typically determined by the lateral and axial dimensions of the RPP model.
Specifically, the RPP lateral dimension is the sensitive area of the DUT. When the sensitive area is much larger than the carrier distribution area (such as a bulk silicon diode), the sensitive area is considered to be infinite; when the sensitive area is smaller than the carrier distribution area (e.g., bulk silicon nMOS transistors, SOI nMOS transistors, etc. large scale integrated circuits), the RPP lateral dimension is the DUT geometry.
The RPP axial dimension is the sensitivity depth z. For devices with well-defined charge collection depth (e.g., devices for SOI processes, etc.), z is determined by the geometry of the device; for devices with a non-well defined sensitivity depth, z is given by charge collection test data for heavy ions (assuming charge collection efficiency can be evaluated and is constant). At this time, heavy ion deposition charge (Q HI ) Correlating with the Collected Charge (CC) observed in the test. Then there are:
Q HI ＝LET HI ×z
at this time, Q HI For LET HI The slope of (2) can determine the depth of sensitivity z.
For devices where neither the depth of sensitivity nor the charge collection efficiency is defined, the depth of sensitivity z can be determined by analyzing the "equivalent Collected Charge (CC)" produced by the pulsed laser. In the RPP model, this means that the deposition charge generated by the pulsed laser is equal to that generated by the heavy ions, and then:
Q L ＝LET HI ×z
the sensitivity depth z can then be determined by continuously adjusting the corrected z value until all of the test data in the formula match.
Specifically, in some embodiments of the present application, the material of the device under test DUT includes silicon, gallium arsenide, silicon carbide, or gallium nitride.
When the pulse laser single event effect test is carried out, the pulse laser single event effect equivalent LET calculation method is adopted. Assuming a pulsed laser incident bulk silicon diode device, the density of the silicon material at this time is ρ=2.33 g/cm 3 Average energy E of one electron-hole pair generated in silicon material p =3.6 eV. The sensitivity depth z=1.1 μm, and the charge Q deposited by pulse incidence in the device is obtained by simulation calculation L The following are given for=13pc:
LET L ＝(E p /ρ)×Q L /z＝18.26MeV·cm 2 /mg
by adopting the pulse laser single event effect test equivalent LET calculation method provided by the application, the pulse laser equivalent LET value which is identical with the heavy ion test can be obtained by utilizing the RPP model of the equivalent LET based on the analysis and calculation on the premise that the deposited charges of the pulse laser and the heavy ion in the sensitive volume are identical. In one aspect, a data reference may be provided for heavy ion test parameter selection; on the other hand, the single event effect sensitivity of the device is preliminarily determined, a reference is provided for screening and radiation-resistant reinforcement design of the satellite device, and engineering application of the pulse laser in the satellite radiation-resistant reinforcement design is further developed.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (1)
1. The equivalent LET calculating method for the pulse laser single event effect test is characterized in that when the electric charge deposited in the sensitive volume of the device according to the pulse laser and the heavy ions is equal, the single event effect caused by the pulse laser and the heavy ions to the device is equivalent, and the method comprises the following steps:
(1) Determining the sensitive area of the device according to the size of the DUT;
(2) Determining a sensitive depth z through z-direction scanning of a pulse laser test;
(3) Determining a sensitive volume according to the sensitive area and the sensitive depth;
(4) Calculating carrier distribution density in the analysis device;
(5) In RPP parallelepiped moldIntegrating the distribution density of the current carriers in the sensitive volume to obtain a deposited charge Q L The geometry of the sensitive volume is parallelepiped, the charge collection in the sensitive volume is uniform, the sensitive volume defines the upper and lower limits of the carrier distribution density (CD) integral operation, and is generally determined by the transverse dimension and the axial dimension of the RPP model;
the RPP lateral dimension is the sensitive area of the DUT, and when the sensitive area is much larger than the carrier distribution area, the sensitive area is considered to be infinite; when the sensitive area is smaller than the carrier distribution area, the RPP lateral dimension is the DUT geometry;
the RPP axial dimension is the sensitive depth z, and when the charge collection depth of the DUT is determined, the sensitive depth z is determined by the geometric dimension of the DUT;
when the sensitive depth z of the device under test is not well defined, the sensitive depth z is given by the charge collection test data of the heavy ions;
heavy ion deposition charge Q HI The relationship with the collected charge observed by the test is:
Q HI ＝LET HI ×z
the sensitive depth z is Q HI For LET HI Is a slope of (2);
for devices where neither the sensitivity depth nor the charge collection efficiency is defined, the sensitivity depth z can be determined by analyzing the "equivalent Collected Charge (CC)" generated by the pulsed laser, which in the RPP model means that the deposited charge generated by the pulsed laser is equal to that generated by the heavy ions, then there is:
Q L ＝LET HI ×z
then continuously adjusting and correcting the z value until all test data in the formula are matched, and determining the sensitive depth z;
(6) Equivalent LET when pulse laser induces single event effect L The values of (2) are:
LET L [MeV·cm 2 /mg]＝(E p /ρ)×Q L [pC]/z[μm]
in which Q L Is a laser induced deposition charge within a sensitive volume; e (E) p Is a materialAverage energy of one electron-hole pair generated in the material; ρ is the density of the material on which the laser is incident;
the material of the DUT includes silicon, gallium arsenide, silicon carbide or gallium nitride.
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| Dey et al. | Determination of the mass and energy of primary cosmic rays above 100 TeV | |
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