CN112222552B - Gamma electrode wire and preparation method thereof - Google Patents

Gamma electrode wire and preparation method thereof Download PDF

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CN112222552B
CN112222552B CN202010926497.5A CN202010926497A CN112222552B CN 112222552 B CN112222552 B CN 112222552B CN 202010926497 A CN202010926497 A CN 202010926497A CN 112222552 B CN112222552 B CN 112222552B
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weight
plating layer
core material
nickel telluride
deionized water
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CN112222552A (en
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郑芳
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Ningbo Kangqiang Micro-Electronics Technology Co ltd
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Ningbo Kangqiang Micro-Electronics Technology Co ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H7/00Processes or apparatus applicable to both electrical discharge machining and electrochemical machining
    • B23H7/22Electrodes specially adapted therefor or their manufacture
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H7/00Processes or apparatus applicable to both electrical discharge machining and electrochemical machining
    • B23H7/02Wire-cutting
    • B23H7/08Wire electrodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H7/00Processes or apparatus applicable to both electrical discharge machining and electrochemical machining
    • B23H7/22Electrodes specially adapted therefor or their manufacture
    • B23H7/24Electrode material

Abstract

The invention relates to the field of electrode wires, in particular to a gamma electrode wire and a preparation method thereof. The method selects the zinc-copper alloy as a core material, and obtains an alloy layer generating gamma phase diffusion through annealing after electroplating the first coating and the second coating. In a cutting test, the cutting speed of the gamma electrode wire is obviously improved compared with that of a common galvanized wire and a common brass wire, the cutting efficiency is obviously improved, energy is saved, the production efficiency during cutting is also improved, and the production strategy of energy conservation and consumption reduction is just met.

Description

Gamma electrode wire and preparation method thereof
Technical Field
The invention relates to the field of electrode wires, in particular to a gamma electrode wire and a preparation method thereof.
Background
The machining technology is different day by day, the cutting of the precision die is generally linear cutting electric spark machining due to the complexity of the structure of the die and higher requirements on precision parameters of the surface and the like of the die after cutting, electrode wires used in the process generally comprise brass electrode wires, common coating electrode wires, composite electrode wires and the like, the cutting efficiency of the electrode wires can be influenced by the performance problems of the electrode wires, and the key for improving the cutting efficiency of the electrode wires is the physical characteristics of the electrode wires, namely the basic component distribution ratio of electrode wire materials and the component metal characteristics of core materials.
The existing wire electrode core material galvanizing process generally adopts the soaking or casting type galvanizing operation of the wire electrode core material in a galvanizing pot, then the wire electrode core material is hoisted and transferred to a cooling tank for cooling, and finally the wire electrode core material is coated after a series of processes such as heat treatment and the like.
Disclosure of Invention
In view of the above problems, the present invention provides a gamma wire electrode, which includes a core material, a first plating layer disposed on a surface of the core material, and a second plating layer disposed on a surface of the first plating layer.
Preferably, the core material comprises the following components in percentage by weight:
cu: 54.8-69.5%, Zn: 29.2-45.8% and inevitable impurities; wherein the weight percentage of the inevitable impurities is not more than 0.3%.
Preferably, the cross section of the core material is circular, and the diameter of the core material is 0.1-0.3 mm.
Preferably, the thickness of the first plating layer is 1-3 μm; the thickness of the second plating layer is 1-5 μm.
Preferably, the first plating layer is prepared from the following raw materials in parts by weight:
zn: 57.2-78.6%, Cu: 10-44%, Te: 1.2-3.6%, Ni: 1.4-4.3% and inevitable impurities; wherein the weight percentage of the inevitable impurities is not more than 0.3%.
Preferably, the second plating layer comprises the following components in percentage by weight:
zn: 80-90%, Cu: 6-18%, Ga: 0.2-3%, Bi: 0.5-5% and unavoidable impurities;
wherein the weight percentage of the inevitable impurities is not more than 0.5%.
The invention also aims to provide a preparation method of the gamma electrode wire, which comprises the following steps:
step 1, preparation of a core material: drawing copper-zinc alloy to prepare a core wire, and removing dust and grease on the surface of the core wire to obtain a core material; wherein the tensile strength is 300-500 MPa, the weight of Cu in the copper-zinc alloy accounts for 54.8-69.5%, the weight of Zn accounts for 29.2-45.8%, and the copper-zinc alloy further comprises inevitable impurities with the weight of not more than 0.3%;
step 2, preparing a first plating layer: preparing a first plating solution, electroplating the core material prepared in the step 1, and then annealing to obtain the core material plated with the first plating layer; wherein the annealing temperature is 400-500 ℃, and the annealing time is 3-5 h; the first plating layer comprises 10-44% by weight of Cu, 57.2-78.6% by weight of Zn, 1.2-3.6% by weight of Te and 1.4-4.3% by weight of Ni, and also comprises unavoidable impurities with the weight of not more than 0.3%;
step 3, preparing a second plating layer: preparing a second plating solution, electroplating the core material plated with the first plating layer prepared in the step 2, and then annealing to obtain a core material plated with a second plating layer; wherein the annealing temperature is 550-700 ℃, and the annealing time is 2-4 h; the second coating comprises 80-90 wt% of Zn, 6-18 wt% of Cu, 0.2-3 wt% of Ga, 0.5-5 wt% of Bi and inevitable impurities with the weight not more than 0.5%;
step 4, preparing the gamma electrode wire: carrying out post-treatment on the core material plated with the second coating prepared in the step 3 to obtain a gamma electrode wire; wherein the post-treatment is heat treatment at 80-100 ℃ for 12-24 h, and then air cooling to room temperature.
Preferably, in the step 2, the preparation process of the first plating solution is as follows: firstly, preparing a nickel telluride nanowire, then pretreating the nickel telluride nanowire, adding the pretreated nickel telluride nanowire into a basic transition liquid containing copper salt and zinc salt, and stirring the mixture uniformly to form a first transition liquid.
Preferably, the preparation method of the nickel telluride nanowire comprises the following steps:
s1, weighing NiCl 2 Adding into deionized water, stirring to dissolve, adding Na 2 TeO 3 Stirring and dispersing the mixture evenly again to obtain a mixed solution A;
wherein NiCl 2 、Na 2 TeO 3 The mass ratio of the deionized water to the deionized water is 1: 1.2-1.5: 6-10;
s2, dropwise adding N into the mixed solution A while stirring 2 H 4 ·H 2 O, stirring for 4-6 h at room temperature to obtain a mixed solution B;
wherein N is 2 H 4 ·H 2 The mass ratio of the O to the mixed liquid A is 1: 25-40;
and S3, pouring the mixed solution B into a reaction kettle with a polytetrafluoroethylene lining, heating to 120-150 ℃, carrying out closed reaction for 8-10 h, cooling to room temperature, washing with deionized water for three times, and drying to obtain the nickel telluride nanowire.
Preferably, the nickel telluride nanowire pretreatment process is as follows:
(1) adding the nickel telluride nanowire into deionized water, carrying out ultrasonic dispersion until the nickel telluride nanowire is uniform, dropwise adding 0.1mol/L NaOH solution while stirring until the pH of the liquid is = 12.0-13.0, continuing stirring for 0.2-0.5 h, filtering to obtain a solid, and washing the solid with deionized water until the solid is neutral to obtain a nickel telluride nanowire alkali-washed matter;
the mass ratio of the nickel telluride nanowires to the deionized water is 1: 5-8;
(2) dispersing the nickel telluride nanowire alkali-washing substance into deionized water, dropwise adding 0.1mol/L HCl solution until the pH of the liquid is = 2.0-3.0, continuously stirring for 0.2-0.5 h, filtering to obtain a solid, washing with water to be neutral, and drying to obtain a nickel telluride nanowire acid-washing substance;
wherein the mass ratio of the nickel telluride nanowire alkali washing matter to the deionized water is 1: 5-8;
(3) dispersing the nickel telluride nanowire acid-washing substance into deionized water, adding sodium dodecyl benzene sulfonate, carrying out ultrasonic treatment for 0.5-1 h, filtering to obtain a solid, and drying to obtain a nickel telluride nanowire pretreatment substance;
wherein the mass ratio of the nickel telluride nanowire acid-washing substance to the sodium dodecyl benzene sulfonate to the deionized water is 1: 0.02-0.05: 8-10.
The invention has the beneficial effects that:
1. the metallographic structure in the existing plating layer simultaneously has alpha, beta', gamma and the like, and the structure cannot be greatly changed in later-stage heat treatment, so that various disordered structures exist, the stability is poor during cutting, the precision of a workpiece is difficult to improve, and the cutting speed cannot achieve an ideal effect. The method selects the zinc-copper alloy as a core material, and obtains an alloy layer generating gamma phase diffusion through annealing after electroplating the first coating and the second coating. In a cutting test, the cutting speed of the gamma electrode wire is obviously improved compared with that of a common galvanized wire and a common brass wire, the cutting efficiency is obviously improved, energy is saved, the production efficiency during cutting is also improved, and the production strategy of energy conservation and consumption reduction is just met.
2. The copper-zinc alloy core material is used as the core material, and the first coating and the second coating which protect the core material are sequentially arranged on the core material. The electrode wire without the zinc coating is equivalent to a common brass wire, and the cutting speed of the electrode wire can be greatly reduced. Therefore, a small amount of gallium and bismuth are added into the second coating to replace part of zinc, firstly, the gallium and the bismuth can form alloy with lower melting point with the zinc, the alloy is easier to fuse after absorbing heat, the boiling points of the gallium and the bismuth are higher than that of the zinc, the gallium and the bismuth are still in a molten state after the zinc reaches the gasification temperature, a microporous structure which is beneficial to improving the flushing resistance can be formed on the surface of the coating while certain resistance can be generated to the gasification of the zinc, and secondly, the gallium and the bismuth in the molten state have certain adsorbability, so that the powder falling phenomenon in the using process of the wire electrode can be solved. Meanwhile, when the second plating layer absorbs a large amount of heat to gasify the zinc, the gallium and the bismuth can transfer the heat more uniformly in a molten state, and the condition that the zinc is quickly consumed after absorbing the large amount of heat can be buffered, and the buffering effect is more obvious after the zinc is greatly consumed.
3. The first plating layer is arranged in the second plating layer, so that the second plating layer can absorb a large amount of heat to be gasified, and then the core material can be further protected. The first coating contains zinc and copper, and is added with the nickel telluride nanowire which has the advantages of good chemical stability, high hardness, high conductivity, low thermal expansion coefficient and the like. In addition, the nickel telluride nanowire can form a stable chemical bond with the surface of the electrode wire core material in a close-packed structure, so that the coating and the core material are combined more tightly, the shape memory of the electrode wire is recovered, and the linearity performance of the electrode wire is improved. Wherein, the pretreatment of the nickel telluride nano wire is to firstly use acid and alkali to remove impurities on the surface of the nickel telluride nano wire and then use sodium dodecyl benzene sulfonate to improve the dispersibility of the nickel telluride nano wire in the plating solution.
Detailed Description
During spark cutting, a large amount of heat is generated, some of which is absorbed by the wire electrode, which reduces the cutting efficiency. If too much heat is lost to the wire, the wire may melt due to overheating. There is a need for a wire electrode surface that vaporizes rapidly and releases thermal energy to the workpiece while the wire cools. The material is gasified after being heated to reach the melting point, and gasification pressure is generated. Materials with lower melting points are more easily vaporized and can help blow the slag off the kerf. Since zinc with a low melting point has a significant effect on improving the discharge performance of the wire electrode, and the proportion of zinc in brass is limited, it is thought that a layer of zinc is added outside the brass wire, which results in a galvanized wire electrode. However, when the galvanized electrode wire is used for cutting, especially for cutting thick workpieces, the zinc coating is quickly consumed due to the high volatilization speed of zinc, the electrode wire without the zinc coating is equivalent to a common brass wire, and the cutting speed of the electrode wire is greatly reduced. Therefore, when the galvanized wire is used, the comprehensive cutting efficiency is not greatly improved. Later, people try to plate a layer of brass outside the brass wire and adjust the proportion of copper and zinc in the brass plate, so that the problem of too fast consumption of zinc is solved to a certain extent, but alpha, beta', gamma and the like exist in the brass plate at the same time, the structure of the brass plate cannot be changed greatly through later-stage heat treatment, various mixed and disorderly matters exist, the stability during cutting is poor, the precision of a workpiece is difficult to improve, and the cutting speed cannot achieve an ideal effect. The gamma electrode wire is prepared by continuous groping, and most problems generated by the existing plating layer can be solved.
The invention is further described with reference to the following examples.
Example 1
The gamma electrode wire comprises a core material, a first plating layer and a second plating layer, wherein the first plating layer is arranged on the surface of the core material, and the second plating layer is arranged on the surface of the first plating layer.
The core material comprises the following components in percentage by weight:
cu: 62.3%, Zn: 37.6% and unavoidable impurities: 0.1 percent.
The cross section of the core material is circular, and the diameter of the core material is 0.2 mm.
The thickness of the first plating layer is 2 μm; the thickness of the second plating layer was 3 μm.
The first coating is prepared from the following raw materials in parts by weight:
zn: 68.7%, Cu: 26%, Te: 2.4%, Ni: 2.8% and unavoidable impurities: 0.1 percent.
The second plating layer comprises the following components in percentage by weight:
zn: 85%, Cu: 10%, Ga: 1.6%, Bi: 3.2 percent and 0.2 percent of inevitable impurities.
The preparation method of the gamma electrode wire specifically comprises the following steps:
step 1, preparation of a core material: drawing copper-zinc alloy to prepare a core wire, and removing dust and grease on the surface of the core wire to obtain a core material; wherein the tensile strength is 400MPa, the weight of Cu in the copper-zinc alloy accounts for 62.3 percent, the weight of Zn accounts for 37.6 percent, and the copper-zinc alloy also comprises inevitable impurities accounting for 0.1 percent by weight;
step 2, preparing a first plating layer: preparing a first plating solution, electroplating the core material prepared in the step 1, and then annealing to obtain the core material plated with the first plating layer; wherein the annealing temperature is 450 ℃, and the annealing time is 4 h; the first plating layer comprises 26% by weight of Cu, 68.7% by weight of Zn, 2.4% by weight of Te, 2.8% by weight of Ni and 0.1% by weight of unavoidable impurities;
step 3, preparing a second plating layer: preparing a second plating solution, electroplating the core material plated with the first plating layer prepared in the step 2, and then annealing to obtain a core material plated with a second plating layer; wherein the annealing temperature is 600 ℃, and the annealing time is 3 h; the second plating layer comprises 85% of Zn, 10% of Cu, 1.6% of Ga, 3.2% of Bi and 0.2% of unavoidable impurities;
step 4, preparing the gamma electrode wire: carrying out post-treatment on the core material plated with the second coating prepared in the step 3 to obtain a gamma electrode wire; wherein the post-treatment is heat treatment at 90 ℃ for 18h, and then air cooling to room temperature.
In the step 2, the preparation process of the first transition liquid comprises the following steps: firstly, preparing a nickel telluride nanowire, then pretreating the nickel telluride nanowire, adding the pretreated nickel telluride nanowire into a basic transition liquid containing copper salt and zinc salt, and stirring the mixture uniformly to form a first transition liquid.
The preparation method of the nickel telluride nanowire comprises the following steps:
s1, weighing NiCl 2 Adding into deionized water, stirring to dissolve, adding Na 2 TeO 3 Stirring and dispersing the mixture to be uniform again to obtain a mixed solution A;
wherein NiCl 2 、Na 2 TeO 3 The mass ratio of the deionized water to the deionized water is 1: 1.2-1.5: 6-10;
s2, dropwise adding N into the mixed solution A while stirring 2 H 4 ·H 2 O, stirring for 4-6 h at room temperature to obtain a mixed solution B;
wherein N is 2 H 4 ·H 2 The mass ratio of the O to the mixed liquid A is 1: 25-40;
and S3, pouring the mixed solution B into a reaction kettle with a polytetrafluoroethylene lining, heating to 120-150 ℃, carrying out closed reaction for 8-10 h, cooling to room temperature, washing with deionized water for three times, and drying to obtain the nickel telluride nanowire.
Wherein the nickel telluride nanowire pretreatment process comprises the following steps:
(1) adding the nickel telluride nanowire into deionized water, performing ultrasonic dispersion until the nickel telluride nanowire is uniform, dropwise adding 0.1mol/L NaOH solution while stirring until the pH of the liquid is = 12.0-13.0, continuing stirring for 0.2-0.5 h, filtering to obtain a solid, and washing the solid to be neutral by using the deionized water to obtain a nickel telluride nanowire alkali-washed substance;
the mass ratio of the nickel telluride nanowires to the deionized water is 1: 5-8;
(2) dispersing the nickel telluride nanowire alkali-washing substance into deionized water, dropwise adding 0.1mol/L HCl solution until the pH of the liquid is = 2.0-3.0, continuously stirring for 0.2-0.5 h, filtering to obtain a solid, washing with water to be neutral, and drying to obtain a nickel telluride nanowire acid-washing substance;
wherein the mass ratio of the nickel telluride nanowire alkali washing matter to the deionized water is 1: 5-8;
(3) dispersing the nickel telluride nanowire acid-washing substance into deionized water, adding sodium dodecyl benzene sulfonate, carrying out ultrasonic treatment for 0.5-1 h, filtering to obtain a solid, and drying to obtain a nickel telluride nanowire pretreatment substance;
wherein the mass ratio of the nickel telluride nanowire acid washing matter, the sodium dodecyl benzene sulfonate and the deionized water is 1: 0.02-0.05: 8-10.
Example 2
The gamma electrode wire comprises a core material, a first plating layer and a second plating layer, wherein the first plating layer is arranged on the surface of the core material, and the second plating layer is arranged on the surface of the first plating layer.
The core material comprises the following components in percentage by weight:
cu: 54.8%, Zn: 44.9% and unavoidable impurities: 0.3 percent.
The cross section of the core material is circular, and the diameter of the core material is 0.1 mm.
The thickness of the first plating layer is 1 μm; the thickness of the second plating layer is 1 μm.
The first coating is prepared from the following raw materials in parts by weight:
zn: 57.2%, Cu: 40%, Te: 1.2%, Ni: 1.4% and unavoidable impurities: 0.2 percent.
The second plating layer comprises the following components in percentage by weight:
zn: 80%, Cu: 18%, Ga: 0.2%, Bi: 1.5% and unavoidable impurities: 0.3 percent.
The preparation method of the gamma electrode wire specifically comprises the following steps:
step 1, preparation of a core material: taking a copper-zinc alloy, performing drawing processing to prepare a core wire, and removing dust and grease on the surface of the core wire to obtain a core material; wherein the tensile strength is 300MPa, the weight of Cu in the copper-zinc alloy accounts for 54.8%, the weight of Zn accounts for 44.9%, and the copper-zinc alloy further comprises inevitable impurities accounting for 0.3% by weight;
step 2, preparing a first plating layer: preparing a first plating solution, electroplating the core material prepared in the step 1, and then annealing to obtain the core material plated with the first plating layer; wherein the annealing temperature is 400 ℃, and the annealing time is 3 h; the first plating layer comprises 40% by weight of Cu, 57.2% by weight of Zn, 1.2% by weight of Te and 1.4% by weight of Ni, and also comprises unavoidable impurities with the weight ratio of not more than 0.2%;
step 3, preparing a second plating layer: preparing a second plating solution, electroplating the core material plated with the first plating layer prepared in the step 2, and then annealing to obtain a core material plated with a second plating layer; wherein the annealing temperature is 550 ℃, and the annealing time is 2 hours; the second plating layer comprises 80% by weight of Zn, 18% by weight of Cu, 0.2% by weight of Ga, 1.5% by weight of Bi and 0.3% by weight of unavoidable impurities;
step 4, preparing the gamma electrode wire: carrying out post-treatment on the core material plated with the second coating prepared in the step 3 to obtain a gamma electrode wire; wherein the post-treatment is heat treatment at 80 ℃ for 12h, and then air cooling to room temperature.
In the step 2, the preparation process of the first transition liquid comprises the following steps: firstly, preparing a nickel telluride nanowire, then pretreating the nickel telluride nanowire, adding the pretreated nickel telluride nanowire into a basic transition liquid containing copper salt and zinc salt, and stirring the mixture uniformly to form a first transition liquid.
The preparation method of the nickel telluride nanowire comprises the following steps:
s1, weighing NiCl 2 Adding into deionized water, stirring to dissolve, adding Na 2 TeO 3 Stirring and dispersing the mixture to be uniform again to obtain a mixed solution A;
wherein NiCl 2 、Na 2 TeO 3 The mass ratio of the deionized water to the deionized water is 1: 1.2-1.5: 6-10;
s2, dropwise adding N into the mixed solution A while stirring 2 H 4 ·H 2 O, stirring for 4-6 h at room temperature to obtain a mixed solution B;
wherein N is 2 H 4 ·H 2 The mass ratio of the O to the mixed liquid A is 1: 25-40;
and S3, pouring the mixed solution B into a reaction kettle with a polytetrafluoroethylene lining, heating to 120-150 ℃, carrying out closed reaction for 8-10 h, cooling to room temperature, washing with deionized water for three times, and drying to obtain the nickel telluride nanowire.
Wherein the nickel telluride nanowire pretreatment process comprises the following steps:
(1) adding the nickel telluride nanowire into deionized water, carrying out ultrasonic dispersion until the nickel telluride nanowire is uniform, dropwise adding 0.1mol/L NaOH solution while stirring until the pH of the liquid is = 12.0-13.0, continuing stirring for 0.2-0.5 h, filtering to obtain a solid, and washing the solid with deionized water until the solid is neutral to obtain a nickel telluride nanowire alkali-washed matter;
the mass ratio of the nickel telluride nanowires to the deionized water is 1: 5-8;
(2) dispersing the nickel telluride nanowire alkali-washing substance into deionized water, dropwise adding 0.1mol/L HCl solution until the pH of the liquid is = 2.0-3.0, continuously stirring for 0.2-0.5 h, filtering to obtain a solid, washing with water to be neutral, and drying to obtain a nickel telluride nanowire acid-washing substance;
wherein the mass ratio of the nickel telluride nanowire alkali washing matter to the deionized water is 1: 5-8;
(3) dispersing the nickel telluride nanowire acid-washing substance into deionized water, adding sodium dodecyl benzene sulfonate, carrying out ultrasonic treatment for 0.5-1 h, filtering to obtain a solid, and drying to obtain a nickel telluride nanowire pretreatment substance;
wherein the mass ratio of the nickel telluride nanowire acid-washing substance to the sodium dodecyl benzene sulfonate to the deionized water is 1: 0.02-0.05: 8-10.
Example 3
The gamma electrode wire comprises a core material, a first plating layer and a second plating layer, wherein the first plating layer is arranged on the surface of the core material, and the second plating layer is arranged on the surface of the first plating layer.
The core material comprises the following components in percentage by weight:
cu: 69.5%, Zn: 30.3% and unavoidable impurities: 0.2 percent.
The cross section of the core material is circular, and the diameter of the core material is 0.3 mm.
The thickness of the first plating layer is 3 μm; the thickness of the second plating layer was 5 μm.
The first coating is prepared from the following raw materials in parts by weight:
zn: 78.6%, Cu: 13.2%, Te: 3.6%, Ni: 4.3% and unavoidable impurities: 0.3 percent.
The second plating layer comprises the following components in percentage by weight:
zn: 87.3%, Cu: 6%, Ga: 1.6%, Bi: 5% and unavoidable impurities: 0.1 percent.
The preparation method of the gamma electrode wire specifically comprises the following steps:
step 1, preparing a core material: drawing copper-zinc alloy to prepare a core wire, and removing dust and grease on the surface of the core wire to obtain a core material; wherein the tensile strength is 500MPa, the weight of Cu in the copper-zinc alloy accounts for 69.5%, the weight of Zn accounts for 30.3%, and the copper-zinc alloy further comprises inevitable impurities accounting for 0.2% by weight;
step 2, preparing a first plating layer: preparing a first plating solution, electroplating the core material prepared in the step 1, and then annealing to obtain the core material plated with the first plating layer; wherein the annealing temperature is 500 ℃, and the annealing time is 5 hours; the first plating layer comprises 13.2% by weight of Cu, 78.6% by weight of Zn, 3.6% by weight of Te and 4.3% by weight of Ni, and also comprises 0.3% by weight of unavoidable impurities;
step 3, preparing a second plating layer: preparing a second plating solution, electroplating the core material plated with the first plating layer prepared in the step 2, and then annealing to obtain a core material plated with a second plating layer; wherein the annealing temperature is 700 ℃, and the annealing time is 4 h; the second plating layer comprises 87.3% by weight of Zn, 6% by weight of Cu, 1.6% by weight of Ga, 5% by weight of Bi and 0.1% by weight of inevitable impurities;
step 4, preparing the gamma electrode wire: carrying out post-treatment on the core material plated with the second coating prepared in the step 3 to obtain a gamma electrode wire; wherein the post-treatment is heat treatment at 100 ℃ for 24 hours and then air cooling to room temperature.
In the step 2, the preparation process of the first transition liquid comprises the following steps: firstly, preparing a nickel telluride nanowire, then pretreating the nickel telluride nanowire, adding the pretreated nickel telluride nanowire into a basic transition liquid containing copper salt and zinc salt, and stirring the mixture uniformly to form a first transition liquid.
The preparation method of the nickel telluride nanowire comprises the following steps:
s1, weighing NiCl 2 Adding into deionized water, stirring to dissolve, adding Na 2 TeO 3 Stirring and dispersing the mixture to be uniform again to obtain a mixed solution A;
wherein NiCl 2 、Na 2 TeO 3 The mass ratio of the deionized water to the deionized water is 1: 1.2-1.5: 6-10;
s2, dropwise adding N into the mixed solution A while stirring 2 H 4 ·H 2 O, stirring for 4-6 h at room temperature to obtain a mixed solution B;
wherein, N 2 H 4 ·H 2 The mass ratio of the O to the mixed liquid A is 1: 25-40;
and S3, pouring the mixed solution B into a reaction kettle with a polytetrafluoroethylene lining, heating to 120-150 ℃, carrying out closed reaction for 8-10 h, cooling to room temperature, washing with deionized water for three times, and drying to obtain the nickel telluride nanowire.
(1) Adding the nickel telluride nanowire into deionized water, carrying out ultrasonic dispersion until the nickel telluride nanowire is uniform, dropwise adding 0.1mol/L NaOH solution while stirring until the pH of the liquid is = 12.0-13.0, continuing stirring for 0.2-0.5 h, filtering to obtain a solid, and washing the solid with deionized water until the solid is neutral to obtain a nickel telluride nanowire alkali-washed matter;
the mass ratio of the nickel telluride nanowires to the deionized water is 1: 5-8;
(2) dispersing the nickel telluride nanowire alkali-washing substance into deionized water, dropwise adding 0.1mol/L HCl solution until the pH of the liquid is = 2.0-3.0, continuously stirring for 0.2-0.5 h, filtering to obtain a solid, washing with water to be neutral, and drying to obtain a nickel telluride nanowire acid-washing substance;
wherein the mass ratio of the nickel telluride nanowire alkali washing matter to the deionized water is 1: 5-8;
(3) dispersing the nickel telluride nanowire acid-washing substance into deionized water, adding sodium dodecyl benzene sulfonate, carrying out ultrasonic treatment for 0.5-1 h, filtering to obtain a solid, and drying to obtain a nickel telluride nanowire pretreatment substance;
wherein the mass ratio of the nickel telluride nanowire acid-washing substance to the sodium dodecyl benzene sulfonate to the deionized water is 1: 0.02-0.05: 8-10.
Comparative example
The electrode wire comprises a core material and a coating, wherein the coating is arranged on the surface of the core material.
The core material comprises the following components in percentage by weight:
cu: 62.3%, Zn: 37.6% and unavoidable impurities: 0.1 percent.
The cross section of the core material is circular, and the diameter of the core material is 0.2 mm.
The thickness of the plating layer was 3 μm.
The plating layer comprises the following components in percentage by weight:
zn: 88.2%, Cu: 11.6 percent and 0.2 percent of inevitable impurities.
The electrode wire is prepared by adopting the conventional means.
In order to more clearly illustrate the invention, the wire electrodes prepared in the embodiments 1 to 3 and the comparative example are subjected to performance detection, the mechanical properties of the wire electrodes are detected on a microcomputer automatic control universal electronic stretching instrument, the conductivity is detected by adopting a Wheatstone bridge method, and the cutting performance is tested by taking 45# steel as a test article.
Wherein, the cutting efficiency means: the ratio of the cutting speed of examples 1-3 to that of comparative example 1, based on the cutting speed of comparative example 1 (i.e., designated as 1).
The test results are shown in table 1:
TABLE 1 comparison of the Performance of different wire electrodes
Figure 608898DEST_PATH_IMAGE002
As can be seen from table 1, the wire electrode prepared in the embodiments 1 to 3 of the present invention has higher electrical conductivity, stronger tensile strength, and better cutting efficiency than the comparative example, and the surface roughness of the cutting is also reduced, and the wire breakage frequency is much lower than that of the comparative example, so that the wire electrode prepared in the present invention has excellent properties, and is suitable for popularization and use.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the protection scope of the present invention, although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.

Claims (8)

1. The gamma electrode wire is characterized by comprising a core material, a first plating layer and a second plating layer, wherein the first plating layer is arranged on the surface of the core material, and the second plating layer is arranged on the surface of the first plating layer;
the second plating layer comprises the following components in percentage by weight:
zn: 80-90%, Cu: 6-18%, Ga: 0.2-3%, Bi: 0.5-5% and inevitable impurities;
wherein the weight percentage of the inevitable impurities is not more than 0.5%;
the first coating is prepared from the following raw materials in parts by weight:
zn: 57.2-78.6%, Cu: 10-44%, Te: 1.2-3.6%, Ni: 1.4-4.3% and inevitable impurities; wherein the weight percentage of the inevitable impurities is not more than 0.3%.
2. The gamma wire electrode of claim 1, wherein the core material comprises the following components by weight percent:
cu: 54.8-69.5%, Zn: 29.2-45.8% and inevitable impurities; wherein the weight percentage of the inevitable impurities is not more than 0.3 percent, and the sum of the weight percentages of the components is 100 percent.
3. The gamma wire electrode according to claim 1, wherein the core material has a circular cross section and a diameter of 0.1 to 0.3 mm.
4. The gamma-ray wire electrode according to claim 1, wherein the first plating layer has a thickness of 1 to 3 μm; the thickness of the second plating layer is 1-5 mu m.
5. A method for preparing a gamma electrode wire according to any one of claims 1 to 4, wherein the method comprises the following steps:
step 1, preparation of a core material: drawing copper-zinc alloy to prepare a core wire, and removing dust and grease on the surface of the core wire to obtain a core material; wherein the tensile strength is 300-500 MPa, the weight of Cu in the copper-zinc alloy accounts for 54.8-69.5%, the weight of Zn accounts for 29.2-45.8%, the copper-zinc alloy further comprises inevitable impurities with the weight of not more than 0.3%, and the sum of the weight percentages of the components is 100%;
step 2, preparing a first plating layer: preparing a first plating solution, electroplating the core material prepared in the step 1, and then annealing to obtain the core material plated with the first plating layer; wherein the annealing temperature is 400-500 ℃, and the annealing time is 3-5 h; the first plating layer comprises 10-44% by weight of Cu, 57.2-78.6% by weight of Zn, 1.2-3.6% by weight of Te and 1.4-4.3% by weight of Ni, and also comprises unavoidable impurities with the weight of not more than 0.3%;
step 3, preparing a second plating layer: preparing a second plating solution, electroplating the core material plated with the first plating layer prepared in the step 2, and then annealing to obtain a core material plated with a second plating layer; wherein the annealing temperature is 550-700 ℃, and the annealing time is 2-4 h; the second coating comprises 80-90 wt% of Zn, 6-18 wt% of Cu, 0.2-3 wt% of Ga, 0.5-5 wt% of Bi and inevitable impurities with the weight ratio not more than 0.5%;
step 4, preparing the gamma electrode wire: carrying out post-treatment on the core material plated with the second coating prepared in the step 3 to obtain a gamma electrode wire; wherein the post-treatment is heat treatment at 80-100 ℃ for 12-24 h, and then air cooling to room temperature.
6. The method for preparing a gamma wire electrode according to claim 5, wherein in the step 2, the first liquid-transition is prepared by: firstly, preparing a nickel telluride nanowire, then pretreating the nickel telluride nanowire, adding the pretreated nickel telluride nanowire into a basic transition liquid containing copper salt and zinc salt, and stirring the mixture uniformly to form a first transition liquid.
7. The method for preparing the gamma electrode wire according to claim 6, wherein the method for preparing the nickel telluride nanowire comprises the following steps:
s1, weighing NiCl 2 Adding the mixture into deionized water, stirring the mixture until the mixture is dissolved, adding Na2TeO3, and stirring and dispersing the mixture uniformly again to obtain a mixed solution A;
wherein NiCl 2 、Na 2 TeO 3 The mass ratio of the deionized water to the deionized water is 1: 1.2-1.5: 6-10;
s2, dropwise adding N into the mixed solution A while stirring 2 H 4 ·H 2 O, stirring for 4-6 h at room temperature to obtain a mixed solution B;
wherein, N 2 H 4 ·H 2 The mass ratio of the O to the mixed liquid A is 1: 25-40;
and S3, pouring the mixed solution B into a reaction kettle with a polytetrafluoroethylene lining, heating to 120-150 ℃, carrying out closed reaction for 8-10 h, cooling to room temperature, washing with deionized water for three times, and drying to obtain the nickel telluride nanowire.
8. The method for preparing the gamma electrode wire according to claim 6, wherein the nickel telluride nanowire is pretreated by the following steps:
(1) adding the nickel telluride nanowire into deionized water, carrying out ultrasonic dispersion until the nickel telluride nanowire is uniform, dropwise adding 0.1mol/L NaOH solution while stirring until the pH of the liquid is = 12.0-13.0, continuing stirring for 0.2-0.5 h, filtering to obtain a solid, and washing the solid with deionized water until the solid is neutral to obtain a nickel telluride nanowire alkali-washed matter;
the mass ratio of the nickel telluride nanowires to the deionized water is 1: 5-8;
(2) dispersing the nickel telluride nanowire alkali-washing substance into deionized water, dropwise adding 0.1mol/L HCl solution until the pH of the liquid is = 2.0-3.0, continuously stirring for 0.2-0.5 h, filtering to obtain a solid, washing with water to be neutral, and drying to obtain a nickel telluride nanowire acid-washing substance;
wherein the mass ratio of the nickel telluride nanowire alkali washing matter to the deionized water is 1: 5-8;
(3) dispersing the nickel telluride nanowire acid-washing substance into deionized water, adding sodium dodecyl benzene sulfonate, carrying out ultrasonic treatment for 0.5-1 h, filtering to obtain a solid, and drying to obtain a nickel telluride nanowire pretreatment substance;
wherein the mass ratio of the nickel telluride nanowire acid-washing substance to the sodium dodecyl benzene sulfonate to the deionized water is 1: 0.02-0.05: 8-10.
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