CN112216785B - 复合电极、复合电极的制造方法、以及叉指换能器 - Google Patents
复合电极、复合电极的制造方法、以及叉指换能器 Download PDFInfo
- Publication number
- CN112216785B CN112216785B CN202011039779.XA CN202011039779A CN112216785B CN 112216785 B CN112216785 B CN 112216785B CN 202011039779 A CN202011039779 A CN 202011039779A CN 112216785 B CN112216785 B CN 112216785B
- Authority
- CN
- China
- Prior art keywords
- layer
- composite electrode
- manufacturing
- aluminum
- evaporation rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title abstract description 13
- 239000000956 alloy Substances 0.000 claims abstract description 20
- 239000007769 metal material Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910000531 Co alloy Inorganic materials 0.000 claims abstract description 9
- JPNWDVUTVSTKMV-UHFFFAOYSA-N cobalt tungsten Chemical compound [Co].[W] JPNWDVUTVSTKMV-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000001704 evaporation Methods 0.000 claims description 25
- 230000008020 evaporation Effects 0.000 claims description 24
- 230000008021 deposition Effects 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 239000011651 chromium Substances 0.000 claims description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 10
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 8
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 238000005275 alloying Methods 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 description 33
- 239000002184 metal Substances 0.000 description 33
- 238000013508 migration Methods 0.000 description 10
- 230000005012 migration Effects 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 229910013336 LiNiO3 Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910012463 LiTaO3 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005501 phase interface Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011039779.XA CN112216785B (zh) | 2020-09-28 | 2020-09-28 | 复合电极、复合电极的制造方法、以及叉指换能器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011039779.XA CN112216785B (zh) | 2020-09-28 | 2020-09-28 | 复合电极、复合电极的制造方法、以及叉指换能器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112216785A CN112216785A (zh) | 2021-01-12 |
CN112216785B true CN112216785B (zh) | 2021-10-08 |
Family
ID=74051456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011039779.XA Active CN112216785B (zh) | 2020-09-28 | 2020-09-28 | 复合电极、复合电极的制造方法、以及叉指换能器 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112216785B (zh) |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60251682A (ja) * | 1984-05-29 | 1985-12-12 | Hitachi Ltd | 磁気抵抗効果型素子 |
JP3925124B2 (ja) * | 2000-09-20 | 2007-06-06 | 株式会社村田製作所 | 弾性表面波装置の製造方法 |
JP3926633B2 (ja) * | 2001-06-22 | 2007-06-06 | 沖電気工業株式会社 | Sawデバイス及びその製造方法 |
CN100527615C (zh) * | 2004-04-20 | 2009-08-12 | 株式会社东芝 | 薄膜压电谐振器及其制造方法 |
US20060012646A1 (en) * | 2004-07-13 | 2006-01-19 | Brother Kogyo Kabushiki Kaisha | Piezoelectric actuator, ink jet head, and method of manufacturing them |
JP5541450B2 (ja) * | 2010-03-16 | 2014-07-09 | セイコーエプソン株式会社 | 圧電素子の製造方法 |
US8629053B2 (en) * | 2010-06-18 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma treatment for semiconductor devices |
JP6605215B2 (ja) * | 2015-03-26 | 2019-11-13 | 住友化学株式会社 | 強誘電体薄膜積層基板、強誘電体薄膜素子、および強誘電体薄膜積層基板の製造方法 |
US10658564B2 (en) * | 2016-11-24 | 2020-05-19 | Huawei Technologies Co., Ltd. | Surface acoustic wave device |
JP6986376B2 (ja) * | 2017-06-27 | 2021-12-22 | NDK SAW devices株式会社 | 弾性表面波素子およびその製造方法 |
DE102018109849B4 (de) * | 2018-04-24 | 2020-03-05 | RF360 Europe GmbH | Elektroakustischer Resonator und Verfahren zum Bilden desselben |
JP2020145567A (ja) * | 2019-03-06 | 2020-09-10 | 株式会社村田製作所 | 弾性波装置 |
CN111010126A (zh) * | 2019-12-12 | 2020-04-14 | 无锡市好达电子有限公司 | 一种分层式电极的声表面波滤波器结构及其制备方法 |
CN111014929B (zh) * | 2019-12-28 | 2021-04-20 | 哈尔滨工业大学 | 一种用于方钴矿热电材料与电极的快速扩散焊连接方法 |
-
2020
- 2020-09-28 CN CN202011039779.XA patent/CN112216785B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN112216785A (zh) | 2021-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0762641B1 (en) | Saw device and its manufacturing method | |
US8601655B2 (en) | Process of making a bulk acoustic wave structure with an aluminum copper nitride piezoelectric layer | |
US20110079418A1 (en) | Ceramic wiring board and method of manufacturing thereof | |
US20060273687A1 (en) | Surface acoustic wave device and method of manufacturing the same | |
CN108111140A (zh) | 弹性波装置、高频前端电路以及通信装置 | |
US20050162039A1 (en) | Saw device and manufacturing method | |
JP2005516517A (ja) | 性能が改善された表面弾性波装置およびその装置を製造する方法 | |
JP2007134932A (ja) | 弾性表面波素子及びその製造方法 | |
JP2005518127A (ja) | 改善された出力許容性を有する電極構造体及び製造法 | |
JP2006513649A (ja) | 改善された温度特性を有するsaw素子 | |
US6774542B2 (en) | Saw device | |
CN1223083C (zh) | 声表面波元件及其制造方法 | |
CN109997307A (zh) | 表面声波装置 | |
CN112216785B (zh) | 复合电极、复合电极的制造方法、以及叉指换能器 | |
CN1578134A (zh) | 声表面波元件及其制法、声表面波设备和声表面波双工器 | |
KR102198535B1 (ko) | 체적 음향 공진기 | |
CN111095794A (zh) | 一种表面声波器件 | |
CN107171653A (zh) | 一种具有高机电耦合系数和高中心频率的声表面波器件 | |
CN110492860A (zh) | 薄膜体声波谐振器及其制造方法 | |
CN109660225B (zh) | 设置铍铝合金膜的多层压电基片及其制备方法 | |
CN115276584A (zh) | 声表面波器件的叉指电极的制造方法 | |
JP3750324B2 (ja) | 薄膜多層電極を有する素子、およびその製造方法 | |
CN208378737U (zh) | 一种陶瓷封装体 | |
JP2008136238A (ja) | 表面波装置及びその製造方法 | |
CN115021712A (zh) | 声表面波谐振器以及声表面波谐振器的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: 510700 Room 202, building D, No. 136, Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant after: Guangdong Guangna Technology Development Co.,Ltd. Address before: 510700 room 1004, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant before: Guangdong guangnaixin Technology Co.,Ltd. |
|
CB02 | Change of applicant information | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210811 Address after: 510535 Room 201, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant after: Guangdong Guangdong Guangdong Hong Kong Macao Dawan District National Nanotechnology Innovation Research Institute Address before: 510700 Room 202, building D, No. 136, Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant before: Guangdong Guangna Technology Development Co.,Ltd. |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20210910 Address after: 510700 room 1004, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant after: Guangdong guangnaixin Technology Co.,Ltd. Address before: 510535 Room 201, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant before: Guangdong Guangdong Guangdong Hong Kong Macao Dawan District National Nanotechnology Innovation Research Institute |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Composite electrodes, manufacturing methods for composite electrodes, and interdigital transducers Effective date of registration: 20230526 Granted publication date: 20211008 Pledgee: CITIC Bank Co.,Ltd. Guangzhou Branch Pledgor: Guangdong guangnaixin Technology Co.,Ltd. Registration number: Y2023980042035 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right |