CN112216586A - Double-station processor for realizing uniform exhaust and plasma processing equipment - Google Patents
Double-station processor for realizing uniform exhaust and plasma processing equipment Download PDFInfo
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- CN112216586A CN112216586A CN201910630160.7A CN201910630160A CN112216586A CN 112216586 A CN112216586 A CN 112216586A CN 201910630160 A CN201910630160 A CN 201910630160A CN 112216586 A CN112216586 A CN 112216586A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
A double-station processor and plasma processing equipment for realizing uniform exhaust comprise two plasma processing chambers which are adjacently arranged and a shared exhaust pump, wherein a gas injection device and a base used for supporting a substrate are arranged in each plasma processing chamber, a plasma restraint device is arranged around the periphery of the base in each plasma processing chamber, an exhaust area is arranged below each plasma restraint device, two exhaust channels are arranged between each plasma processing chamber and the exhaust pump, each exhaust channel is provided with a gas inlet and a gas outlet, the gas inlet is connected with the exhaust area in the plasma processing chamber, and the gas outlet is connected with the exhaust pump. The invention improves the uniformity of the distribution of the reaction gas on the surface of the substrate in the reaction cavity of the plasma processing equipment, improves the etching uniformity of the substrate and improves the qualification rate of the substrate.
Description
Technical Field
The present invention relates to a semiconductor device, and more particularly, to a dual-station processor and a plasma processing device for uniformly exhausting gas.
Background
In the equipment for processing the semiconductor substrate by using the reaction gas, such as plasma etching equipment, the reaction gas is dissociated into plasma in the reaction cavity to carry out process processing on the semiconductor substrate, the precision requirement of the processing process is continuously improved along with the gradual increase of the size of the semiconductor substrate, and the uniformity degree of the processing of the semiconductor substrate becomes a key parameter for measuring whether one piece of semiconductor equipment is qualified or not.
In order to improve the efficiency of substrate processing, a plasma processing apparatus 80 may be provided with at least two reaction chambers 70 and 70 ', the reaction chamber 70 being defined by a reaction chamber outer wall 71, and the reaction chamber 70 ' being defined by a reaction chamber outer wall 71 ', as shown in fig. 1 and 2. A susceptor 30 for supporting a substrate 90 is disposed in the reaction chamber 70, a susceptor 30 'for supporting a substrate 90' is disposed in the reaction chamber 70 ', and the susceptor 30' have a temperature adjusting function. The gas inlet unit 20 connected to the gas supply unit 60 supplies the reaction gas into the reaction chamber 70, the gas inlet unit 20 ' connected to the gas supply unit 60 supplies the reaction gas into the reaction chamber 70 ', and the external rf source 50 ' provide energy for dissociating the reaction gas into plasma. The temperature adjusting function of the control base, the uniform air intake of the air intake element and the uniform electric field distribution of the external radio frequency source in the reaction cavity can effectively adjust the etching uniformity of the semiconductor substrate, and the exhaust uniformity of the exhaust device can also obviously influence the etching uniformity result of the semiconductor substrate. The exhaust 40 is used to exhaust the reaction by-products out of the reaction chamber while maintaining the pressure within the reaction chamber. To maintain the pressure within the reaction chamber balanced, a plasma confinement arrangement 10 and 10' is typically disposed downstream of the reaction chamber, typically around the susceptor, to allow reaction by-products of the gases to exit the reaction chamber while confining the plasma within the reaction chamber to the working region of the plasma. Plasma confinement devices typically include a body and a number of holes or slot passages through the body to enable the exhaust of gaseous byproducts. The region between the plasma confinement device 10 and the exhaust device 40 is an exhaust region that surrounds the susceptor at the center of the reaction chamber. In order to ensure the synchronous operation of the processing processes in different reaction chambers, the exhaust regions of a plurality of reaction chambers are usually configured to be in fluid communication with the common exhaust device 40, so that the exhaust device can only be disposed under the adjacent side walls of the two reaction chambers, the reaction chambers are communicated with the exhaust device 40 through an opening 45, the opening 45 simultaneously penetrates through the bottom of the adjacent region of the two reaction chambers 70 and 70', the two reaction chambers share one exhaust device 40, and the gaseous by-products generated by the reaction processes are exhausted from the reaction chambers.
Fig. 3 is a flow velocity profile of an exhaust region and exhaust 40 in a reaction chamber 70' of a plasma processing apparatus. Fig. 4 is a pressure distribution diagram in cross section C-C of fig. 3. FIG. 5 is a flow velocity profile of the plasma confinement arrangement and the substrate surface in the reaction chamber 70'. As can be seen from fig. 3-5, since two reaction chambers share one exhaust device 40, in order to ensure the symmetry of exhaust rates of the two reaction chambers, the exhaust device 40 is disposed below the adjacent side walls of the two reaction chambers, and there is only one exhaust channel 401 between each reaction chamber and the exhaust device 40, the exhaust channel 401 connects the opening and the exhaust region in the reaction chamber, which will inevitably cause the paths of the gases at different positions in the exhaust regions of the two reaction chambers to reach the opening 45 to be different, so that the gases near the exhaust region of the opening 45 are exhausted from the reaction chamber through the exhaust device 40 along the route a, the exhaust rate is faster, the gas pressure in the region is lower, the used reaction gases and byproduct gases above the plasma confinement device corresponding to the exhaust region will enter the exhaust device 40 through the exhaust channel faster, and the gases far from the exhaust region of the opening 45 part will be exhausted from the reaction chamber through the exhaust device 40 along the route B, the exhaust rate is slower, the gas pressure in the region is higher, the used reaction gas and byproduct gas above the plasma confinement device corresponding to the exhaust region can slowly enter the exhaust device 40 through the exhaust channel, as can be seen from fig. 3 and 4, the flow rate at the middle position of the exhaust channel 401 is fastest, as can be seen from fig. 5, the gas flow rate at the side close to the exhaust channel 401 in the processing region above the substrate is obviously higher than the gas flow rate at the side far from the exhaust channel 401, which can cause the gas distribution in the processing region above the plasma confinement device to be uneven, further affect the uniformity of the gas distribution on the surface of the semiconductor substrate, cause the processing of the semiconductor substrate to be uneven in different regions, and reduce the qualification rate of the semiconductor substrate.
Disclosure of Invention
The invention provides a double-station processor and plasma processing equipment for realizing uniform exhaust, which improve the distribution uniformity of reaction gas on the surface of a substrate in a reaction cavity in the plasma processing equipment, improve the etching uniformity of the substrate and improve the qualification rate of the substrate.
In order to achieve the above object, the present invention provides a dual site processor for achieving uniform exhaust, the dual site processor comprising: the plasma processing device comprises two plasma processing chambers which are adjacently arranged and a shared exhaust pump, wherein a gas injection device and a base used for supporting a substrate are arranged in each plasma processing chamber, a plasma restraint device is arranged in each plasma processing chamber and surrounds the periphery of the base, an exhaust area is arranged below each plasma restraint device, a plurality of gas channels are arranged on each plasma restraint device and used for discharging gas to the exhaust area, two exhaust channels are arranged between each plasma processing chamber and the exhaust pump, each exhaust channel is provided with a gas inlet and a gas outlet, the gas inlets are connected with the exhaust area in the plasma processing chambers, and the gas outlets are connected with the exhaust pumps.
The exhaust passage is a long straight passage.
The two exhaust passages are horizontally disposed between each plasma processing chamber and the exhaust pump.
The minimum distance between the air inlets of the two exhaust channels is more than or equal to 100 mm.
The maximum distance between the air inlets of the two exhaust channels is smaller than or equal to the diameter of the circular plasma processing chamber.
The maximum distance between the air inlets of the two exhaust channels is less than or equal to the length of a diagonal of the rectangular plasma processing chamber.
In the vertical direction, the exhaust pump is arranged below the two plasma processing chambers, and in the horizontal direction, the positional relationship between the exhaust pump and the two plasma processing chambers satisfies that: the central point of the exhaust pump and the central points of the two plasma processing chambers form a triangle.
The invention also provides plasma processing equipment for realizing uniform exhaust, which comprises at least one double-station processor, wherein the gas injection device in each plasma processing chamber in each double-station processor is connected to a reaction gas source.
The invention improves the uniformity of the distribution of the reaction gas on the surface of the substrate in the reaction cavity of the plasma processing equipment, improves the etching uniformity of the substrate and improves the qualification rate of the substrate.
Drawings
Fig. 1 is a schematic structural view of a plasma processing apparatus having two reaction chambers in the related art.
FIG. 2 is a top view of two vacuum reaction chambers and an exhaust in FIG. 1.
Fig. 3 is a flow velocity distribution diagram of an exhaust region and an exhaust passage in one of the reaction chambers in the related art plasma processing apparatus.
Fig. 4 is a pressure distribution diagram in cross section C-C of fig. 3.
FIG. 5 is a flow velocity distribution diagram of a plasma confinement assembly and a substrate surface in one of the reaction chambers of the prior art plasma processing apparatus.
FIG. 6 is a schematic diagram of a plasma processing apparatus having a dual-site processor in an embodiment of the invention.
Fig. 7 is a top view of the dual bit processor of fig. 6.
Fig. 8 is a flow velocity distribution diagram of an exhaust region and an exhaust passage in one of the reaction chambers in the plasma processing apparatus of fig. 6.
Fig. 9 is a pressure distribution diagram across section C-C of fig. 8.
FIG. 10 is a flow velocity profile of a plasma confinement assembly and a substrate surface in one of the reaction chambers of the plasma processing apparatus of FIG. 6.
FIG. 11 is a graph of the flow velocity distribution in the reaction chamber of FIGS. 3 and 8 for different azimuthal angles.
Detailed Description
The preferred embodiment of the present invention will be described in detail below with reference to fig. 6 to 11.
Fig. 6 is a schematic cross-sectional view of a front view of a plasma processing apparatus having a dual-site processor, the plasma processing apparatus including two reaction chambers sharing an exhaust pump, the two reaction chambers and the exhaust pump together forming a dual-site processor, according to an embodiment of the present invention. In other embodiments, there may be more than two reaction chambers in the plasma processing apparatus, and still use a mode in which two reaction chambers share one exhaust pump, that is, the plasma processing apparatus may comprise a plurality of dual-site processors, and the structure and exhaust principle in each of the dual-site processors are similar.
In the plasma processing apparatus 100 shown in fig. 6, two reaction chambers are arranged adjacently, the reaction chamber 170 is defined by the reaction chamber wall 101, the reaction chamber 170 'is defined by the reaction chamber wall 101', and the two reaction chambers share one adjacent sidewall 105. In a plasma processing process, a vacuum environment is generally set in the plasma processing apparatus 100, and a gas injection device injects a reactive gas in the reactive gas source 160 into the plasma processing apparatus 100 at the beginning of the plasma processing process. The gas injection device can be in various forms, and can be arranged into a flat plate type gas spray header or other structures according to different processes and specific structures of the reaction cavity, in this embodiment, the gas injection device is arranged into flat plate type gas spray headers 120 and 120 ', the gas spray headers 120 and 120' can uniformly inject reaction gas into the plasma processing equipment, the material of the gas spray header is selected as a material suitable for being used as an electrode, and the gas spray header can be connected with a radio frequency power supply or grounded to be used as a part of a parallel plate capacitor to generate plasma. A susceptor 130 and 130 ' for supporting the semiconductor substrate 135 is disposed below the gas showerheads 120 and 120 ', respectively, and typically an electrostatic chuck 133 and 133 ' is disposed above the susceptor 130 and 130 ', respectively, to secure the semiconductor substrate 135 during the plasma processing process by means of electrostatic attraction generated by the electrostatic chucks 133 and 133 '. The susceptors 130 and 130' are generally cylindrical and are located at the center of the bottom of the reaction chamber to provide a more symmetrical process environment, which is beneficial to the smooth plasma treatment process. The rf power source systems 150 and 150 ' act on the susceptors 130 and 130 ', and generate electric fields between the showerhead 120 and the susceptors 130, 120 ' and 130 ', dissociate the reaction gases injected from the showerhead 120 and the showerhead 120 ' into plasma, and sustain the plasma to act on the semiconductor substrate. A plasma confinement device 110 is disposed around base 130 and a plasma confinement device 110 'is disposed around base 130'. The regions above the level of plasma confinement devices 110 and 110 'are plasma processing regions 102 and 102', and the regions below plasma confinement devices 110 and 110 'are exhaust regions 103 and 103'. Since the two reaction chambers have substantially the same structure, the structure of one reaction chamber will be selected for the purpose of description. The plasma confinement assembly 110 disposed around the pedestal 130 includes a substantially annular flow guide body 111 and a plurality of gas passages 112 disposed in the flow guide body 111 to facilitate passage of spent reactant and byproduct gases in the processing region 102, including charged and neutral particles, into the exhaust region 103, the gas passages 112 being sized to neutralize the charged particles in the plasma as they pass through the gas passages 112 while allowing the neutral particles to pass therethrough. The exhaust region 103 is a region surrounding the susceptor 130. An opening 145 is provided below the two reaction chambers, and the opening 145 communicates with the exhaust pump 140 provided below the two reaction chambers.
As shown in fig. 7, taking one of the reaction chambers as an example for description, a partition member 190 is disposed at a position of the exhaust passage between the exhaust region of the reaction chamber 170 and the opening 145 to divide the complete exhaust passage into a first exhaust passage 201 and a second exhaust passage 202, the partition member 190 should be disposed at a middle portion of the original exhaust passage such that the first exhaust passage 201 and the second exhaust passage 202 are respectively disposed at both sides of the partition member 190, so that a portion of the original exhaust passage where the flow speed is the fastest becomes a non-flow portion, and the gas is blocked by the partition member 190 and cannot enter the exhaust pump 140 from the middle portion of the original exhaust passage but can only enter the exhaust pump 140 from the first exhaust passage 201 and the second exhaust passage 202 at both sides. Both the first exhaust channel 201 and the second exhaust channel 202 have an air inlet connected to the exhaust area in the reaction chamber and an air outlet connected to the exhaust pump 140. In one embodiment, the first exhaust passage 201 and the second exhaust passage 202 are horizontally disposed between the reaction chamber 170 and the exhaust pump 140
In one embodiment, the isolation component 190 may be provided in the form of a baffle, that is, a component in a solid form forms a blocking isolation for the original exhaust channel, and the baffle 190 blocks the original exhaust channel between the exhaust region in the reaction chamber and the exhaust pump 140, so that one end of the baffle 190 may be fixedly connected to the bottom chamber wall on the side close to the opening 145 in a single reaction chamber, and the other end of the baffle 190 may be fixedly connected to the sidewall 105 between two reaction chambers or the top chamber wall on the side close to the opening 145 in a single reaction chamber. The baffle 190 may be in the form of a flat plate, or a curved plate with a certain curvature, or even any form with a certain surface area, and in order to obtain a better blocking effect, it is necessary to have a sufficient width between the first exhaust passage 201 and the second exhaust passage 202, so that the width (flat plate form) or the length of the curved surface (curved plate form) of the baffle 190 is required to be greater than or equal to 100 mm. The thickness of the baffle 190 is not limited as long as it can block the air flow.
In another embodiment, the isolation component 190 may also be configured as a cavity, that is, a hollow method is adopted to divide the original exhaust channel into the first exhaust channel 201 and the second exhaust channel 202. The cavity 190 has a side wall, the cross section of which can be a closed curve of any shape, one end of the side wall can be fixedly connected with the bottom cavity wall of the single reaction chamber near the opening 145, and the other end of the side wall can be fixedly connected with the side wall 105 between the two reaction chambers or fixedly connected with the top cavity wall of the single reaction chamber near the opening 145. The width of the cavity 190 is also required to be greater than or equal to 100 mm.
As shown in FIG. 7, in order to more conveniently arrange the isolation member 190, the position of the exhaust pump 140 may be adjusted to be arranged below the sidewall 105 between the two reaction chambers, instead, to be arranged at one side of the bottom midpoint line of the two reaction chambers, so that the isolation member 190 can be more easily connected to the top chamber wall and the bottom chamber wall of the reaction chambers. It should be noted that the exhaust pump 140 is not arbitrarily selected on which side of the line connecting the bottom midpoints of the two reaction chambers. Because the reaction chamber 170 is provided with the open valve 180 and the reaction chamber 170 'is provided with the open valve 180', the open valve is arranged between the reaction chamber and the transmission chamber (not shown in the figure), when the open valve is opened, the substrate after reaction in the reaction chamber can be transmitted into the transmission chamber through the open valve, when the open valve is closed, the reaction chamber and the transmission chamber are isolated, the reaction chamber is in a closed state, and the reaction chamber can be kept in a vacuum state or a state of being filled with reaction gas. Therefore, the exhaust pump 140 can be disposed only on the side opposite to the open valve 180 so as not to affect the process operation. Basically, if the center points of the two reaction chambers and the center point of the exhaust unit in the related art are located on a straight line, a triangle is formed between the center points of the two reaction chambers and the center point of the exhaust pump 140 in the present invention.
The separating component 190 separates the distance between the first exhaust channel 201 and the second exhaust channel 202, and the width of the first exhaust channel 201 and the second exhaust channel 202 also needs to satisfy a certain condition, generally, the first exhaust channel 201 and the second exhaust channel 202 are both channels with a certain length, the cross-sectional shapes of the channels are not limited, the first exhaust channel 201 and the second exhaust channel 202 can be uniform channels, that is, the widths of the channel inlet, the channel outlet and the channel body are all approximately the same, the sum of the sectional area of the first exhaust channel 201 and the sectional area of the second exhaust channel 202 is ensured to be equal to the sectional area of the original exhaust channel, that is, although the original exhaust channel is divided into two exhaust channels by the separating component 190, the arranging of the separating component 190 cannot reduce the exhaust amount of the exhaust channel, and the exhaust capacities of the first exhaust channel 201 and the second exhaust channel 202 still need to reach the original exhaust capacity of the single exhaust channel The exhaust capacity of (c). The sum of the exhaust capacities of the first exhaust channel 201 and the second exhaust channel 202 does not need to exceed the exhaust capacity of the original single exhaust channel, so it is not necessary to set the first exhaust channel 201 and the second exhaust channel 202 too wide (the cross section is too large), for a circular reaction chamber, it is basically ensured that the distance between the channel outer side wall of the first exhaust channel 201 and the channel outer side wall of the second exhaust channel 202 is smaller than or equal to the diameter of the single reaction chamber, for a rectangular reaction chamber, it is basically ensured that the distance between the channel outer side wall of the first exhaust channel 201 (the side wall of the first exhaust channel 201 adjacent to the isolation member 190 is the inner side wall, correspondingly, the side wall farthest from the isolation member 190 is the outer side wall) and the channel outer side wall of the second exhaust channel 202 (the side wall of the second exhaust channel 202 adjacent to the isolation member 190 is the inner side wall, correspondingly, the side wall farthest from the isolation member 190 is the outer side wall) is smaller than or equal to the diagonal distance of the single reaction chamber .
Fig. 8 is a flow velocity distribution diagram of an exhaust region and an exhaust passage in one of the reaction chambers in the plasma processing apparatus of fig. 6. Fig. 9 is a pressure distribution diagram across section C-C of fig. 8. As can be seen from fig. 8 and 9, the reaction gas in the reaction chamber enters the exhaust pump from the first exhaust channel and the second exhaust channel on both sides respectively through the blocking shunt of the isolation component, and the gas flow rate at the isolation component is slowed down.
FIG. 10 is a flow velocity profile of a plasma confinement assembly and a substrate surface in one of the reaction chambers of the plasma processing apparatus of FIG. 6. As can be seen from fig. 9, in the processing region above the substrate, the gas flow rate near the exhaust channel and the gas flow rate far from the exhaust channel are approximately equal, which makes the gas distribution in the processing region above the plasma confinement device uniform, which is beneficial to improving the etching uniformity.
As shown in fig. 11, the flow rate of the gas in the processing region above the plasma confinement device in the background art is not uniform, and the difference between the maximum value and the minimum value is large, but the dual-station processor and the plasma processing apparatus provided by the present invention greatly balance the flow rate of the gas in the processing region above the plasma confinement device, and as can be seen from the graph, the range between the maximum value and the minimum value of the flow rate is reduced to half of that in the background art, so that the flow rate of the gas on the surface of the substrate is well uniform, which is beneficial to improving the etching uniformity.
The invention improves the uniformity of the distribution of the reaction gas on the surface of the substrate in the reaction cavity of the plasma processing equipment, improves the etching uniformity of the substrate and improves the qualification rate of the substrate.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (8)
1. A dual site processor for achieving uniform venting, said dual site processor comprising: the plasma processing device comprises two plasma processing chambers which are adjacently arranged and a shared exhaust pump, wherein a gas injection device and a base used for supporting a substrate are arranged in each plasma processing chamber, a plasma restraint device is arranged in each plasma processing chamber and surrounds the periphery of the base, an exhaust area is arranged below each plasma restraint device, and a plurality of gas channels are arranged on the plasma restraint devices and used for exhausting gas to the exhaust area.
2. The dual site processor for achieving uniform exhaust as recited in claim 1 wherein said exhaust passage is a long straight passage.
3. A dual site processor for achieving uniform exhaust according to claim 1 wherein two exhaust passages are horizontally disposed between each plasma processing chamber and the exhaust pump.
4. A dual site processor for achieving uniform exhaust according to claim 1 wherein the minimum distance between the inlets of the two exhaust passages is 100mm or greater.
5. A dual site processor for achieving uniform exhaust as claimed in claim 3 wherein the maximum distance between the inlets of the two exhaust passages is less than or equal to the diameter of a circular plasma processing chamber.
6. A dual site processor for achieving uniform exhaust according to claim 3 wherein the maximum distance between the inlets of the two exhaust passages is less than or equal to the diagonal length of a rectangular plasma processing chamber.
7. The dual site processor of claim 1 wherein the exhaust pump is disposed below the two plasma processing chambers in a vertical direction, and wherein the exhaust pump is disposed in a horizontal direction relative to the two plasma processing chambers such that: the central point of the exhaust pump and the central points of the two plasma processing chambers form a triangle.
8. A plasma processing apparatus for achieving uniform exhaust, comprising at least one dual site processor as claimed in any of claims 1-6, wherein the gas injection means in each plasma processing chamber of each dual site processor is connected to a reactive gas source.
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| CN201910630160.7A CN112216586B (en) | 2019-07-12 | 2019-07-12 | Double-station processor for realizing uniform exhaust and plasma processing equipment |
| TW109119314A TWI809280B (en) | 2019-07-12 | 2020-06-09 | Double-station processor and plasma treatment equipment to achieve uniform exhaust |
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| CN201910630160.7A CN112216586B (en) | 2019-07-12 | 2019-07-12 | Double-station processor for realizing uniform exhaust and plasma processing equipment |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN112216586B (en) | 2023-03-10 |
| TW202103213A (en) | 2021-01-16 |
| TWI809280B (en) | 2023-07-21 |
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