CN112187183A - Broadband low-noise amplifier with differential structure - Google Patents
Broadband low-noise amplifier with differential structure Download PDFInfo
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- CN112187183A CN112187183A CN202011097961.0A CN202011097961A CN112187183A CN 112187183 A CN112187183 A CN 112187183A CN 202011097961 A CN202011097961 A CN 202011097961A CN 112187183 A CN112187183 A CN 112187183A
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- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 3
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 3
- 239000003990 capacitor Substances 0.000 claims description 16
- 230000009123 feedback regulation Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- 238000004088 simulation Methods 0.000 description 7
- 238000004891 communication Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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Abstract
The invention provides a broadband low-noise amplifier with a differential structure, which comprises a first MOS (metal oxide semiconductor) tube, a second MOS tube, a third MOS tube, a fourth MOS tube, a fifth MOS tube, a sixth MOS tube, a first feedback resistor, a second feedback resistor, a power supply input end, a bias voltage input end, a signal input end and a signal output end, wherein the first MOS tube is connected with the first MOS tube; an input signal is input into the differential structure circuit formed by the MOS tubes through the signal input end and is output from the signal output end under the feedback regulation of the first feedback resistor and the second feedback resistor, so that the gain of the circuit is improved, the power consumption of the circuit is reduced, and the noise performance of the circuit is improved.
Description
Technical Field
The invention relates to the technical field of radio frequency front-end circuits, in particular to a broadband low-noise amplifier with a differential structure.
Background
At present, the design of a narrow-band lna is biased in the conventional lna design, but with the development of wireless communication technology and software defined radio technology, the narrow-band lna cannot meet the existing communication development requirements, and the requirement for a wide-band lna which can be compatible with a 3G/4G/5G communication frequency band is gradually increased. The existing broadband low-noise amplifier mainly has the problems of incomplete frequency band coverage, poor in-band flatness, poor noise performance and the like. It is desirable to provide a solution to the above problems.
Disclosure of Invention
The invention aims to provide a broadband low-noise amplifier with a differential structure, which is used for realizing the technical effects of improving the frequency band coverage range of the broadband low-noise amplifier, improving the flatness in a band and reducing the noise influence.
The invention provides a broadband low-noise amplifier with a differential structure, which comprises a first MOS (metal oxide semiconductor) tube, a second MOS tube, a third MOS tube, a fourth MOS tube, a fifth MOS tube, a sixth MOS tube, a first feedback resistor, a second feedback resistor, a power supply input end, a bias voltage input end, a signal input end and a signal output end, wherein the first MOS tube is connected with the first MOS tube; the grid electrode of the first MOS tube and the grid electrode of the second MOS tube are both connected with the bias voltage input end; the source electrode of the first MOS tube and the source electrode of the second MOS tube are both connected with the first end of the power input end; the grid electrode of the third MOS tube and the grid electrode of the fifth MOS tube are both connected with the positive electrode of the signal input end; the grid electrode of the fourth MOS tube and the grid electrode of the sixth MOS tube are both connected with the negative electrode of the signal input end; the source electrode of the third MOS tube, the source electrode of the fourth MOS tube, the source electrode of the fifth MOS tube and the source electrode of the sixth MOS tube are all connected with the second end of the power input end; the drain electrode of the first MOS tube, the drain electrode of the third MOS tube and the drain electrode of the fifth MOS tube are all connected with the anode of the signal output end; the drain electrode of the second MOS tube, the drain electrode of the fourth MOS tube and the drain electrode of the sixth MOS tube are all connected with the negative electrode of the signal output end; the first feedback resistor is arranged between the grid electrode and the drain electrode of the third MOS tube; the second feedback resistor is arranged between the grid electrode and the drain electrode of the fourth MOS tube.
Further, the broadband low noise amplifier further comprises a first grounded capacitor and a second grounded capacitor; the first grounding capacitor is connected with the drain electrode of the first MOS tube; and the second grounding capacitor is connected with the drain electrode of the second MOS tube.
Furthermore, the value range of the first grounding capacitor and the second grounding capacitor is 2 pF-4 pF.
Further, the first end of the power input end is a positive electrode; the second end of the power supply input end is a negative electrode; the first MOS tube and the second MOS tube are PMOS tubes; the third MOS tube, the fourth MOS tube, the fifth MOS tube and the sixth MOS tube are NMOS tubes.
Further, the first end of the power input end is a negative electrode; the second end of the power supply input end is a positive electrode; the first MOS tube and the second MOS tube are NMOS tubes; the third MOS transistor, the fourth MOS transistor, the fifth MOS transistor and the sixth MOS transistor are PMOS transistors.
Further, the wideband low noise amplifier further comprises an inductor; the source electrode of the third MOS tube, the source electrode of the fourth MOS tube, the source electrode of the fifth MOS tube and the source electrode of the sixth MOS tube are connected with the second end of the power input end through the inductor.
Furthermore, the inductance value range of the inductor is 2 nH-5 nH.
Further, the first feedback resistor and the second feedback resistor are both adjustable resistors, and the adjustable range is 100-3000 Ω.
The beneficial effects that the invention can realize are as follows: the invention adopts a differential structure, which can effectively improve the noise performance of the circuit; meanwhile, the gain of the circuit is improved through the plurality of MOS tubes, the first feedback resistor and the second feedback resistor, the power consumption of the circuit is reduced, and the noise performance of the circuit is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments of the present invention will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic diagram of a first wideband low noise amplifier according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a second wideband low noise amplifier provided in accordance with an embodiment of the present invention;
fig. 3 is a schematic diagram illustrating a simulation result of a gain of a first wideband low noise amplifier according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a simulation result of a noise factor of a first wideband low noise amplifier according to an embodiment of the present invention.
Icon: 10-broadband low noise amplifier; 100-a first MOS transistor; 200-a second MOS tube; 300-a third MOS tube; 400-a fourth MOS tube; 500-fifth MOS transistor; 600-sixth MOS transistor; 700-a first feedback resistance; 800-second feedback resistance.
Detailed Description
The technical solutions in the embodiments of the present invention will be described below with reference to the drawings in the embodiments of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present invention, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
Referring to fig. 1 and fig. 2, fig. 1 is a schematic diagram of a first wideband low noise amplifier according to an embodiment of the present invention; fig. 2 is a schematic diagram of a second wideband low noise amplifier according to an embodiment of the present invention.
In an implementation manner, the wideband low noise amplifier 10 with a differential structure provided in an embodiment of the present invention includes a first MOS transistor 100, a second MOS transistor 200, a third MOS transistor 300, a fourth MOS transistor 400, a fifth MOS transistor 500, a sixth MOS transistor 600, a first feedback resistor 700, a second feedback resistor 800, a power input terminal, a bias voltage input terminal, a signal input terminal, and a signal output terminal; the grid electrode of the first MOS transistor 100 and the grid electrode of the second MOS transistor 200 are both connected with a bias voltage input end (VB); the source electrode of the first MOS transistor 100 and the source electrode of the second MOS transistor 200 are both connected to the first end of the power input end; the gate of the third MOS transistor 300 and the gate of the fifth MOS transistor 500 are both connected to the positive electrode (RFin +) of the signal input terminal; the grid electrode of the fourth MOS transistor 400 and the grid electrode of the sixth MOS transistor 600 are both connected with the negative electrode (RFin-) of the signal input end; the source electrode of the third MOS transistor 300, the source electrode of the fourth MOS transistor 400, the source electrode of the fifth MOS transistor 500 and the source electrode of the sixth MOS transistor 600 are all connected to the second end of the power input end; the drain of the first MOS transistor 100, the drain of the third MOS transistor 300, and the drain of the fifth MOS transistor 500 are all connected to the positive electrode (RFout +) of the signal output end; the drain of the second MOS transistor 200, the drain of the fourth MOS transistor 400, and the drain of the sixth MOS transistor 600 are all connected to the negative electrode (RFout-) of the signal output terminal; the first feedback resistor 700 is arranged between the gate and the drain of the third MOS transistor 300; the second feedback resistor 800 is disposed between the gate and the drain of the fourth MOS transistor 400.
In one embodiment, in order to further improve the frequency band coverage, the first feedback resistor 700 and the second feedback resistor 800 may be set as adjustable resistors, and the adjustable range is 100 Ω -3000 Ω. By adjusting the first feedback resistor 700 and the second feedback resistor 800, output signals of different frequency bands can be obtained.
In one embodiment, the wideband low noise amplifier 10 further comprises a first ground capacitor (C1) and a second ground capacitor (C2); the first grounding capacitor (C1) is connected with the drain electrode of the first MOS transistor 100; the second grounding capacitor (C2) is connected to the drain of the second MOS transistor 200. The alternating current signal can be coupled to the ground through the first grounding capacitor (C1) and the second grounding capacitor (C2), and the signal is filtered. The value range of the first grounding capacitor (C1) and the second grounding capacitor (C2) is 2 pF-4 pF, and one preferable value is 3 pF.
In one embodiment, the first terminal of the power input terminal may be a positive terminal; the second end of the power input terminal may be a negative electrode; the first MOS transistor 100 and the second MOS transistor 200 are PMOS transistors; the third MOS transistor 300, the fourth MOS transistor 400, the fifth MOS transistor 500 and the sixth MOS transistor 600 are all NMOS transistors. The width-length ratio of the first MOS tube 100 to the second MOS tube 200 is 62.5/1, and the finger value range is 20-50; the width-length ratio of the third MOS tube 300 to the fourth MOS tube 400 is 33.3/1, and the finger value range is 80-100; the width-length ratio of the fifth MOS tube 500 to the sixth MOS tube 600 is 33.3/1, and the finger value range is 50-80. The threshold voltage ranges of the first MOS transistor 100 and the second MOS transistor 200 are-350 mV to-700 mV; the threshold voltage ranges of the third MOS transistor 300, the fourth MOS transistor 400, the fifth MOS transistor 500 and the sixth MOS transistor 600 are 300 mV-600 mV. The positive input Voltage (VDD) of the power input terminal may be 1.3V or 1.8V. The bias Voltage (VB) ranges from 0.6V to 1.1V.
In one embodiment, the first terminal of the power input terminal may also be a negative electrode; the second end of the power input end can also be a positive electrode; the first MOS transistor 100 and the second MOS transistor 200 are NMOS transistors; the third MOS transistor 300, the fourth MOS transistor 400, the fifth MOS transistor 500 and the sixth MOS transistor 600 are PMOS transistors.
In one embodiment, the wideband low noise amplifier 10 further comprises an inductor L; the source electrode of the third MOS transistor 300, the source electrode of the fourth MOS transistor 400, the source electrode of the fifth MOS transistor 500, and the source electrode of the sixth MOS transistor 600 are all connected to the second end of the power input end through an inductor L. The crosstalk from the ground can be effectively isolated and the circuit stability can be improved through the arranged inductor L. In order to ensure more reliable performance, the inductance value range of the inductor L may be set to 2nH to 5 nH.
Please refer to fig. 3 and 4; fig. 3 is a schematic diagram illustrating a simulation result of a gain of a first wideband low noise amplifier according to an embodiment of the present invention; fig. 4 is a schematic diagram of a simulation result of a noise factor of a first wideband low noise amplifier according to an embodiment of the present invention.
In an embodiment, in order to verify the reliability of the wideband low noise amplifier 10, the simulation result of the gain S21 obtained by performing multiple optimization iterations of the simulation according to the embodiment of the present invention is shown in fig. 3, where when the operating frequency band of the wideband low noise amplifier 10 with a differential structure is in the range of 30.0MHz to 6.0GHz, the in-band gain S21 is 16.5 to 19.5dB, and particularly, the gain S21 at the operating frequency of 2.4GH is 18.3 dB. The simulation result of the noise factor NF is shown in fig. 4, when the operating frequency band of the wideband low noise amplifier 10 with the differential structure is within the range of 30.0MHz to 6.0GHz, the in-band noise factor NF is 0.3 to 1.1dB, and particularly, the noise factor NF is about 0.3dB at the operating frequency of 2.4 GHz.
In summary, the present invention provides a wideband low noise amplifier with a differential structure, including a first MOS transistor, a second MOS transistor, a third MOS transistor, a fourth MOS transistor, a fifth MOS transistor, a sixth MOS transistor, a first feedback resistor, a second feedback resistor, a power input terminal, a bias voltage input terminal, a signal input terminal, and a signal output terminal; the grid electrode of the first MOS tube and the grid electrode of the second MOS tube are both connected with the bias voltage input end; the source electrode of the first MOS tube and the source electrode of the second MOS tube are both connected with the first end of the power input end; the grid electrode of the third MOS tube and the grid electrode of the fifth MOS tube are both connected with the positive electrode of the signal input end; the grid electrode of the fourth MOS tube and the grid electrode of the sixth MOS tube are both connected with the negative electrode of the signal input end; the source electrode of the third MOS tube, the source electrode of the fourth MOS tube, the source electrode of the fifth MOS tube and the source electrode of the sixth MOS tube are all connected with the second end of the power input end; the drain electrode of the first MOS tube, the drain electrode of the third MOS tube and the drain electrode of the fifth MOS tube are all connected with the positive electrode of the signal output end; the drain electrode of the second MOS tube, the drain electrode of the fourth MOS tube and the drain electrode of the sixth MOS tube are all connected with the negative electrode of the signal output end; the first feedback resistor is arranged between the grid electrode and the drain electrode of the third MOS tube; the second feedback resistor is arranged between the grid electrode and the drain electrode of the fourth MOS tube; the frequency band coverage range and the in-band flatness of the broadband low-noise amplifier are improved, and meanwhile, the noise influence is reduced.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. A broadband low-noise amplifier with a differential structure is characterized by comprising a first MOS (metal oxide semiconductor) tube, a second MOS tube, a third MOS tube, a fourth MOS tube, a fifth MOS tube, a sixth MOS tube, a first feedback resistor, a second feedback resistor, a power supply input end, a bias voltage input end, a signal input end and a signal output end; the grid electrode of the first MOS tube and the grid electrode of the second MOS tube are both connected with the bias voltage input end; the source electrode of the first MOS tube and the source electrode of the second MOS tube are both connected with the first end of the power input end; the grid electrode of the third MOS tube and the grid electrode of the fifth MOS tube are both connected with the positive electrode of the signal input end; the grid electrode of the fourth MOS tube and the grid electrode of the sixth MOS tube are both connected with the negative electrode of the signal input end; the source electrode of the third MOS tube, the source electrode of the fourth MOS tube, the source electrode of the fifth MOS tube and the source electrode of the sixth MOS tube are all connected with the second end of the power input end; the drain electrode of the first MOS tube, the drain electrode of the third MOS tube and the drain electrode of the fifth MOS tube are all connected with the anode of the signal output end; the drain electrode of the second MOS tube, the drain electrode of the fourth MOS tube and the drain electrode of the sixth MOS tube are all connected with the negative electrode of the signal output end; the first feedback resistor is arranged between the grid electrode and the drain electrode of the third MOS tube; the second feedback resistor is arranged between the grid electrode and the drain electrode of the fourth MOS tube.
2. The wideband low noise amplifier according to claim 1, further comprising a first capacitance to ground and a second capacitance to ground; the first grounding capacitor is connected with the drain electrode of the first MOS tube; and the second grounding capacitor is connected with the drain electrode of the second MOS tube.
3. The wideband low noise amplifier according to claim 2, wherein the first ground capacitance and the second ground capacitance have a value in a range of 2pF to 4 pF.
4. The wideband low noise amplifier according to claim 1, wherein the first of the power supply inputs is positive; the second end of the power supply input end is a negative electrode; the first MOS tube and the second MOS tube are PMOS tubes; the third MOS tube, the fourth MOS tube, the fifth MOS tube and the sixth MOS tube are NMOS tubes.
5. The wideband low noise amplifier according to claim 1, wherein the first of the power supply inputs is negative; the second end of the power supply input end is a positive electrode; the first MOS tube and the second MOS tube are NMOS tubes; the third MOS transistor, the fourth MOS transistor, the fifth MOS transistor and the sixth MOS transistor are PMOS transistors.
6. The wideband low noise amplifier according to any of claims 1-5, further comprising an inductor; the source electrode of the third MOS tube, the source electrode of the fourth MOS tube, the source electrode of the fifth MOS tube and the source electrode of the sixth MOS tube are connected with the second end of the power input end through the inductor.
7. The wideband low noise amplifier of claim 6, wherein the inductance of the inductor is in the range of 2nH to 5 nH.
8. The wideband low noise amplifier according to claim 1, wherein the first feedback resistor and the second feedback resistor are both adjustable resistors, and the adjustable range is 100 Ω -3000 Ω.
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| CN202011097961.0A CN112187183A (en) | 2020-10-14 | 2020-10-14 | Broadband low-noise amplifier with differential structure |
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| CN202011097961.0A CN112187183A (en) | 2020-10-14 | 2020-10-14 | Broadband low-noise amplifier with differential structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113726320A (en) * | 2021-08-20 | 2021-11-30 | 成都振芯科技股份有限公司 | Broadband low-power-consumption high-linearity digital-to-analog switch and control system and method |
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