CN112185806A - Method for manufacturing solar cell absorption layer film - Google Patents
Method for manufacturing solar cell absorption layer film Download PDFInfo
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- CN112185806A CN112185806A CN202011110086.5A CN202011110086A CN112185806A CN 112185806 A CN112185806 A CN 112185806A CN 202011110086 A CN202011110086 A CN 202011110086A CN 112185806 A CN112185806 A CN 112185806A
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- zinc
- copper
- tin
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- sulfur
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 7
- 239000002243 precursor Substances 0.000 claims abstract description 34
- WILFBXOGIULNAF-UHFFFAOYSA-N copper sulfanylidenetin zinc Chemical compound [Sn]=S.[Zn].[Cu] WILFBXOGIULNAF-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 25
- PDYXSJSAMVACOH-UHFFFAOYSA-N [Cu].[Zn].[Sn] Chemical compound [Cu].[Zn].[Sn] PDYXSJSAMVACOH-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims abstract description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000010949 copper Substances 0.000 claims abstract description 16
- 229910052802 copper Inorganic materials 0.000 claims abstract description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011135 tin Substances 0.000 claims abstract description 12
- 229910052718 tin Inorganic materials 0.000 claims abstract description 12
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 12
- 239000011701 zinc Substances 0.000 claims abstract description 12
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims abstract description 9
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 8
- 239000011593 sulfur Substances 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 230000001681 protective effect Effects 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 239000000376 reactant Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- 239000013077 target material Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000006096 absorbing agent Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 238000000861 blow drying Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a method for manufacturing a solar cell absorption layer film, and relates to the technical field of new energy. The method comprises the following steps: preparing a substrate, namely depositing three elements of copper, zinc and tin on the surface of the substrate to form a copper-zinc-tin precursor; depositing sulfur element on the surface of the copper-zinc-tin precursor to form a stacked copper-zinc-tin-sulfur precursor; placing the stacked copper-zinc-tin-sulfur precursor in a vacuum environment, and introducing mixed gas consisting of protective gas and hydrogen sulfide gas; and heating the stacked copper-zinc-tin-sulfur precursor from room temperature to 600-650 ℃, and naturally cooling to room temperature to obtain the copper-zinc-tin-sulfur solar cell absorbing layer film. The invention has the advantages that: the method is characterized in that copper, zinc and tin are deposited on the surface of a substrate to form a copper-zinc-tin precursor, and then sulfur is deposited on the surface of the copper-zinc-tin precursor to form a stacked copper-zinc-tin-sulfur precursor.
Description
Technical Field
The invention relates to the technical field of new energy, in particular to a method for manufacturing a solar cell absorption layer film.
Background
Solar cells are electrical devices that generate an electric current from sunlight by the photovoltaic effect, and a solar cell device generally includes a photovoltaic active absorber layer between a lower electrode layer and an upper electrode layer, which absorbs sunlight and converts it into an electric current. Among the new generation of thin film solar cell materials, copper zinc tin sulfide thin film solar cell materials with low cost, high efficiency and environmental friendliness have become important and hot spots of research. As a solar cell material, the copper-zinc-tin-sulfur thin film has a proper forbidden bandwidth and a larger light absorption coefficient, more importantly, the copper-zinc-tin-sulfur thin film has rich contents of constituent elements on the earth, is safe, nontoxic and pollution-free, and is considered to be one of the most promising cheap photovoltaic materials internationally.
The highest laboratory conversion efficiency of the prior copper-zinc-tin-sulfur thin-film solar cell is only 10.1 percent. Therefore, a proper preparation method of the copper zinc tin sulfide solar cell absorption layer film is needed to be adopted, the components and the structure of the copper zinc tin sulfide solar cell absorption layer film are optimized, the conversion efficiency of the copper zinc tin sulfide solar cell is further improved, and the prior art is complex in process and troublesome to manufacture.
Disclosure of Invention
The invention aims to solve the technical problem of providing a method for manufacturing a solar cell absorbing layer film, which can solve the problems of complicated preparation of a copper-zinc-tin-sulfur film and low conversion efficiency of a manufactured solar cell.
In order to solve the technical problems, the technical scheme of the invention is as follows: the method comprises the following steps:
s1, preparation of substrate: sequentially soaking the substrate in acetone, alcohol and deionized water, ultrasonically cleaning, and blow-drying with nitrogen for later use;
s2, adopting a direct current magnetron sputtering system, and carrying out single-target sputtering by taking copper-zinc-tin alloy as a target material with the vacuum degree of 3.5 multiplied by 10-4Depositing three elements of copper, zinc and tin on the surface of the substrate to form a copper-zinc-tin precursor, wherein the flow of the glow-starting argon is 40-50 sccm, the glow-starting pressure is 1.0-1.5 Pa, the sputtering power is 10-50W, and the working pressure is 0.2-1.2 Pa;
s3, depositing sulfur elements on the surface of the copper-zinc-tin precursor to form a stacked copper-zinc-tin-sulfur precursor;
s4, placing the stacked copper-zinc-tin-sulfur precursor in a vacuum environment, and introducing a mixed gas consisting of a protective gas and a hydrogen sulfide gas, wherein the concentration of the hydrogen sulfide gas is 1% -5%;
s5, heating the stacked copper-zinc-tin-sulfur precursor from room temperature to 200-300 ℃ at the heating rate of 5-10 ℃/min, and preserving heat for 20-30 min;
s6, raising the temperature of the reactant after the step S5 to 500-600 ℃ at the temperature raising rate of 2-3 ℃/min, and preserving the temperature for 20-30 min;
and S7, heating the reactant obtained after the step S6 to 600-650 ℃ at the heating rate of 5-10 ℃/min, preserving the heat for 15-20min, and naturally cooling to room temperature to obtain the copper-zinc-tin-sulfur solar cell absorbing layer film.
Furthermore, the atomic ratio of copper, zinc and tin in the copper-zinc-tin alloy is 3-5:2-4: 2-4.
Further, the substrate is a glass, stainless steel, silicon wafer, plastic, polymer or metal substrate with a metal-based back electrode, and the metal-based back electrode is molybdenum, gold, platinum, silver, titanium, aluminum, copper, tungsten or nickel.
The invention has the advantages that: the method is characterized in that copper, zinc and tin are deposited on the surface of a substrate to form a copper-zinc-tin precursor, and then sulfur is deposited on the surface of the copper-zinc-tin precursor to form a stacked copper-zinc-tin-sulfur precursor.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments. The following examples are presented to enable one of ordinary skill in the art to more fully understand the present invention and are not intended to limit the scope of the embodiments described herein.
The first embodiment is as follows: the method comprises the following steps:
s1, preparation of substrate: sequentially soaking a substrate in acetone, alcohol and deionized water, ultrasonically cleaning, and drying the substrate by using nitrogen for later use, wherein the substrate is glass, stainless steel, a silicon wafer, plastic or a polymer with a metal-based back electrode, and the metal-based back electrode is molybdenum, gold, platinum, silver, titanium, aluminum, copper or tungsten;
s2, adopting a direct current magnetron sputtering system, and carrying out single-target sputtering by taking copper-zinc-tin alloy as a target material with the vacuum degree of 3.5 multiplied by 10-4Pa above, the flow of the glow-starting argon gas is 40sccm, the glow-starting pressure is 1.0Pa, the sputtering power is 10W, the working pressure is 0.2Pa, and three elements of copper, zinc and tin are deposited on the surface of the substrate to form a copper-zinc-tin precursor, copper-zincThe atomic ratio of copper, zinc and tin in the tin alloy is 3:2: 2;
s3, depositing sulfur elements on the surface of the copper-zinc-tin precursor to form a stacked copper-zinc-tin-sulfur precursor;
s4, placing the stacked copper-zinc-tin-sulfur precursor in a vacuum environment, and introducing mixed gas consisting of protective gas and hydrogen sulfide gas, wherein the concentration of the hydrogen sulfide gas is 1%;
s5, heating the stacked copper-zinc-tin-sulfur precursor from room temperature to 200 ℃ at the heating rate of 5 ℃/min, and keeping the temperature for 20 min;
s6, heating the reactant obtained in the step S5 to 500 ℃ at the heating rate of 2 ℃/min, and keeping the temperature for 20 min;
and S7, heating the reactant obtained in the step S6 to 600 ℃ at the heating rate of 5 ℃/min, preserving the heat for 15min, and naturally cooling to room temperature to obtain the copper-zinc-tin-sulfur solar cell absorbing layer film.
Example two: the method comprises the following steps:
s1, preparation of substrate: sequentially soaking a substrate in acetone, alcohol and deionized water, ultrasonically cleaning, and drying with nitrogen for later use, wherein the substrate is a metal substrate with a metal-based back electrode, and the metal-based back electrode is molybdenum, gold, platinum, silver, titanium, aluminum, copper, tungsten and nickel;
s2, adopting a direct current magnetron sputtering system, and carrying out single-target sputtering by taking copper-zinc-tin alloy as a target material with the vacuum degree of 3.5 multiplied by 10-4Depositing three elements of copper, zinc and tin on the surface of the substrate to form a copper-zinc-tin precursor, wherein the flow of the glow starting argon is 50sccm, the glow starting pressure is 1.5Pa, the sputtering power is 50W, and the working pressure is 1.2 Pa; the atomic ratio of copper, zinc and tin in the copper-zinc-tin alloy is 5:4: 4;
s3, depositing sulfur elements on the surface of the copper-zinc-tin precursor to form a stacked copper-zinc-tin-sulfur precursor;
s4, placing the stacked copper-zinc-tin-sulfur precursor in a vacuum environment, and introducing mixed gas consisting of protective gas and hydrogen sulfide gas, wherein the concentration of the hydrogen sulfide gas is 5%;
s5, heating the stacked copper-zinc-tin-sulfur precursor from room temperature to 300 ℃ at the heating rate of 10 ℃/min, and keeping the temperature for 30 min;
s6, heating the reactant obtained in the step S5 to 600 ℃ at the heating rate of 3 ℃/min, and keeping the temperature for 30 min;
and S7, heating the reactant obtained in the step S6 to 650 ℃ at the heating rate of 10 ℃/min, preserving the heat for 20min, and naturally cooling to room temperature to obtain the copper-zinc-tin-sulfur solar cell absorbing layer film.
According to the embodiment, three elements of copper, zinc and tin are deposited on the surface of the substrate to form the copper-zinc-tin precursor, and then the sulfur element is deposited on the surface of the copper-zinc-tin precursor to form the stacked copper-zinc-tin-sulfur precursor.
The foregoing shows and describes the general principles and features of the present invention, together with the advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (3)
1. A method for manufacturing a solar cell absorption layer film is characterized by comprising the following steps: the method comprises the following steps:
s1, preparation of substrate: sequentially soaking the substrate in acetone, alcohol and deionized water, ultrasonically cleaning, and blow-drying with nitrogen for later use;
s2, adopting a direct current magnetron sputtering system, and carrying out single-target sputtering by taking copper-zinc-tin alloy as a target material with the vacuum degree of 3.5 multiplied by 10- 4Depositing three elements of copper, zinc and tin on the surface of the substrate to form a copper-zinc-tin precursor, wherein the flow of the glow-starting argon is 40-50 sccm, the glow-starting pressure is 1.0-1.5 Pa, the sputtering power is 10-50W, and the working pressure is 0.2-1.2 Pa;
s3, depositing sulfur elements on the surface of the copper-zinc-tin precursor to form a stacked copper-zinc-tin-sulfur precursor;
s4, placing the stacked copper-zinc-tin-sulfur precursor in a vacuum environment, and introducing a mixed gas consisting of a protective gas and a hydrogen sulfide gas, wherein the concentration of the hydrogen sulfide gas is 1% -5%;
s5, heating the stacked copper-zinc-tin-sulfur precursor from room temperature to 200-300 ℃ at the heating rate of 5-10 ℃/min, and preserving heat for 20-30 min;
s6, raising the temperature of the reactant after the step S5 to 500-600 ℃ at the temperature raising rate of 2-3 ℃/min, and preserving the temperature for 20-30 min;
and S7, heating the reactant obtained after the step S6 to 600-650 ℃ at the heating rate of 5-10 ℃/min, preserving the heat for 15-20min, and naturally cooling to room temperature to obtain the copper-zinc-tin-sulfur solar cell absorbing layer film.
2. The method for manufacturing an absorber layer film of a solar cell according to claim 1, wherein: the atomic ratio of copper, zinc and tin in the copper-zinc-tin alloy is 3-5:2-4: 2-4.
3. The method for manufacturing an absorber layer film of a solar cell according to claim 1, wherein: the substrate is glass, stainless steel, a silicon wafer, plastic, polymer or a metal substrate with a metal-based back electrode, and the metal-based back electrode is molybdenum, gold, platinum, silver, titanium, aluminum, copper, tungsten or nickel.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011110086.5A CN112185806A (en) | 2020-10-16 | 2020-10-16 | Method for manufacturing solar cell absorption layer film |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011110086.5A CN112185806A (en) | 2020-10-16 | 2020-10-16 | Method for manufacturing solar cell absorption layer film |
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| CN112185806A true CN112185806A (en) | 2021-01-05 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165748A (en) * | 2013-02-28 | 2013-06-19 | 宁波大学 | Method of preparing copper-zinc tin-sulphur solar cell absorbed layer thin film |
| CN103222062A (en) * | 2010-11-22 | 2013-07-24 | E.I.内穆尔杜邦公司 | Inks and processes to make a chalcogen-ontaining semiconductor |
| CN103733320A (en) * | 2011-08-10 | 2014-04-16 | 国际商业机器公司 | Capping layers for improved crystallization |
| CN104032336A (en) * | 2013-03-07 | 2014-09-10 | 纳米及先进材料研发院有限公司 | Non-vacuum method for producing light absorbing material applied in solar battery |
| CN105390557A (en) * | 2014-08-21 | 2016-03-09 | 东京应化工业株式会社 | Coating liquid, light absorption layer for solar cell and solar cell, manufacturing method thereof |
-
2020
- 2020-10-16 CN CN202011110086.5A patent/CN112185806A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103222062A (en) * | 2010-11-22 | 2013-07-24 | E.I.内穆尔杜邦公司 | Inks and processes to make a chalcogen-ontaining semiconductor |
| CN103733320A (en) * | 2011-08-10 | 2014-04-16 | 国际商业机器公司 | Capping layers for improved crystallization |
| CN103165748A (en) * | 2013-02-28 | 2013-06-19 | 宁波大学 | Method of preparing copper-zinc tin-sulphur solar cell absorbed layer thin film |
| CN104032336A (en) * | 2013-03-07 | 2014-09-10 | 纳米及先进材料研发院有限公司 | Non-vacuum method for producing light absorbing material applied in solar battery |
| CN105390557A (en) * | 2014-08-21 | 2016-03-09 | 东京应化工业株式会社 | Coating liquid, light absorption layer for solar cell and solar cell, manufacturing method thereof |
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