CN112185795B - Mixed type large-area photomultiplier based on silicon electron multiplier - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/08—Cathode arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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Abstract
The invention relates to a photomultiplier, in particular to a silicon electron multiplier-based hybrid large-area photomultiplier, and aims to solve the problems that the conventional photomultiplier is slow in response time, complex in manufacturing and assembling process, high in load voltage, high in burden of a high-voltage device, large in assembling difficulty due to the fact that the structural size of a focusing electrode is increased, and the like. The photomultiplier comprises a glass shell, a photocathode, a focusing electrode, a silicon electron multiplier and an electrode lead, wherein the glass shell is a vacuum cavity, the photocathode is deposited on the inner surface of an incident end of the glass shell, and the focusing electrode and the silicon electron multiplier are arranged on the central axis of the vacuum cavity along the incident light direction. The invention adopts the silicon electron multiplier working in the Geiger mode to obtain better single photon signal detection capability, and adopts the metal disc focusing and single-stage or multi-stage electrostatic focusing electrode structure to realize effective collection of photoelectrons and improve the detection efficiency of the large-area PMT.
Description
Technical Field
The invention relates to a photomultiplier, in particular to a silicon electron multiplier-based hybrid large-area photomultiplier.
Background
The conventional Photomultiplier Tube (PMT) is mainly composed of a photocathode, a focusing electrode, a dynode system and an anode, is a photoelectric vacuum detector capable of converting a very weak light signal into an electric signal and amplifying the electric signal, has the characteristics of high sensitivity, fast time response and high gain, and is an important means for realizing weak light detection. At present, the demand of high energy physics detection field to high performance large tracts of land PMT is very big, PMT is the core of large-scale particle detector, large tracts of land covers around large-scale particle detector for detect the cerenkov light that charged particle that high energy particle that passes the scintillator and the material interact produces around, and utilize the time that light signal arrives PMT to rebuild the direction and the positional information of well son, consequently increase PMT detection area and improve its detection efficiency, transit time dispersion, single photon resolving power, gain, dark noise, performance such as life-span, play crucial effect to accurate detection and the accurate information reconstruction of target high energy particle.
The development of the high-performance large-area PMT has important significance for the advanced scientific research of the high-energy physical foundation, and in order to meet the requirements of the high-energy particle detector on the PMT with the large cathode surface, the high detection efficiency and the high time resolution, high-energy physical laboratories in Europe, Japan and America independently or collaborate with photomultiplier tube manufacturers, and the research and development work of the high-performance PMT with the large detection surface is successively carried out.
The Japanese Hamamatsu company develops R12860 type large-area PMT based on traditional dynode multiplication, the collection efficiency is 90 percent, the transition time dispersion is 2.7ns FWHM (-3dB spectral width), and the gain can reach 10 7 The single-photon peak-to-valley ratio is about 2.5(S.Hirota, Y.Nishimura, Y.Suda, et al., New big alert, hybrid photo-detector and photo multi-consumer tube for a gigantic water-detector, Nuclear Instruments and Methods in Physics Research A,2014,766: 152-.
A hybrid PMT based on avalanche photodiodes was developed by Tokyo university, Japan, with a transit time dispersion of about 3.2ns FWHM (M Ziembick and Hyper-Kamiokand Proto-Collaboration, Photosensors and front-end electronics for the Hyper-Kamiokand experiment, Nuclear Instrument, and Methods in Physics Research, A,2020,952: 161829.).
Large area scintillation crystal based hybrid PMTs designed by European CERN and Russian scientists optically couple scintillation crystals to the standard 2 inch or so effective detection surface of PMTs to multiply photoelectrons collected globally (B.K. Lubsandorzhiev, Phototectors of Lake Baikal Neutrino experiment and Tunka Air Cherenkov Array, Nuclear Instruments and Methods in Physics Research A,2000,442: 368-.
Italian scientists have proposed a hybrid PMT based on Silicon PhotoMultiplier readout (G.Barbarino, a, b L.Campajola, a R.de Asmundis, et al, Proof of feasility of the Vacuum Silicon photo Multiplier Tube (VSiPMT), IOP,2013,8(04):04021.), but there are few reports of this type of large area SiPM (Silicon PhotoMultiplier based) hybrid PMT in the later stages.
Chinese patent CN 101924007 a, published by the high energy institute of the chinese academy of sciences in 2010, proposes "a photomultiplier tube" in which a photocathode is covered on all the inner surfaces of a vacuum container, and an electron multiplier is located at the center of the vacuum container, thereby enlarging the effective photocathode area and improving the photon conversion efficiency.
High energy institute of Chinese academy, Xian-Ming-Shi, NorthThe square night vision company and other units jointly develop a large-area PMT based on a microchannel plate, and the gain can reach 10 7 The peak-to-valley ratio P/V of a single photon is about 5.6, and 100% electron collection efficiency is achieved, and the test results of the device can be found in the following article: y Zhu, Y Cao, F Gao, et al, The mass production and batch test result of 20MCP-PMTs, nucleic Instrument and Methods in Physics Research, A,2020,952:162002.
At present, the development of a large-area photomultiplier has certain difficulties. The large-area PMT based on dynode multiplication, developed by Hamamatsu corporation of japan, has a slow PMT response time due to a relatively large dynode assembly structure, and is complicated in manufacturing and assembling processes. The mixed PMT based on avalanche photodiode developed by tokyo university in japan requires a high voltage of approximately 8kV to be applied to the PMT for effective electron bombardment multiplication, whereas the mixed PMT based on scintillation crystal in large area designed by european CERN and russian scientists requires a high voltage of approximately 2-3 ten thousand volts to accelerate the photoelectron bombardment of the scintillation crystal material, which greatly increases the burden on high-voltage devices. In order to realize better photoelectron focusing, a mixed PMT based on silicon photomultiplier readout proposed by Italian scientists adopts a focusing electrode structure with the size far larger than the caliber of a glass bulb on the aspect of structural concept design, so that the assembly engineering difficulty is higher. The cost and time characteristics of the large-area PMT based on the microchannel plate developed in China still need to be improved.
Disclosure of Invention
The invention aims to solve the problems that the PMT response time is slow, the manufacturing and assembling processes are complex due to the fact that the structure of an electron multiplier is relatively large, the load of a high-voltage device is increased due to the fact that the loading voltage of the electron multiplier is too high, the assembling difficulty is large due to the fact that the size of a focusing electrode structure is increased for effectively collecting photoelectrons and the like in the conventional large-area photomultiplier, and provides a silicon electron multiplier-based hybrid large-area photomultiplier.
In order to achieve the purpose, the invention adopts the technical scheme that:
a mixed large-area photomultiplier based on a silicon electron multiplier is characterized in that: comprises a glass shell 1, a photocathode 2, a focusing electrode 3, a silicon electron multiplier 5 and an electrode lead 8 which are arranged in the glass shell 1;
the inside of the glass shell 1 is a vacuum cavity; the photocathode 2 is evaporated on the inner surface of the incident end of the glass shell 1; the focusing electrode 3 and the silicon electron multiplier 5 are arranged on the central shaft of the vacuum cavity; the silicon electron multiplier 5 is coaxially arranged at the bottom of the focusing electrode 3;
the focusing electrode 3 adopts a multi-stage electrostatic focusing structure, and the electrodes are separated by ceramic materials; the multi-stage electrostatic focusing electrode structure can obtain smaller focal spot size, and the effective collection efficiency of more than 90% is ensured while the cathode detection surface is increased;
incident light penetrates through the incident end of the glass shell 1 and irradiates the photocathode 2 to generate a photoelectric effect, the photocathode 2 is excited to emit photoelectrons, and the photoelectrons are accelerated and focused to the silicon electron multiplier 5 working in a Geiger (Geiger) mode under the action of an electric field of the focusing electrode 3, so that a photoelectron gain current is obtained;
the electrode lead 8 comprises a voltage input end for providing input voltage for the photocathode 2, the focusing electrode 3 and the silicon electron multiplier 5, and a signal output end for leading out a gain current signal generated by the silicon electron multiplier 5;
the glass shell 1 is of an ellipsoidal structure, and the focusing electrode 3 and the silicon electron multiplier 5 are arranged on a central shaft of the vacuum cavity far away from the hemisphere at the incident end; evaporating a cathode material on the inner surface of a hemisphere at the incident end of the glass shell 1 to form a photocathode 2, and evaporating an aluminum reflection substrate material on the inner surface of the hemisphere to form an aluminum film 4; the structure enables the paths of photoelectrons from the photocathode 2 to reach the silicon electron multiplier 5 to be approximately equal, the consistency of photoelectron collection time is improved, the time and signal resolution of the photomultiplier are improved, and the ellipsoidal structure can enable the photomultiplier to have a larger detection area under the condition of good time consistency;
the silicon electron multiplier 5 adopts a thin incidence window silicon through hole electrode type silicon electron multiplier or a non-light window silicon through hole electrode type silicon electron multiplier, does not need to be connected with an electrode space, reduces peripheral gaps of four spliced sides, and improves the effective photosensitive area, thereby improving the detection efficiency of the photomultiplier.
Further, the glass shell comprises a support assembly, wherein the support assembly comprises a base 9 and a support column 6 which is arranged on the base 9 and is positioned in the glass shell 1; a vacuum cavity is formed between the base 9 and the glass shell 1; the focusing electrode 3 and the silicon electron multiplier 5 are arranged on the support column 6; the electrode lead 8 is led out from the inside of the support column 6.
Further, the silicon electron multiplier 5 is composed of silicon electron multiplier units 51, and is arranged in an M × N array form, wherein M is larger than or equal to N, and M, N are positive integers; the silicon electronic multiplier unit 51 has a size of (1 to 100) × (1 to 100) mm 2 。
Furthermore, the cathode material of the photocathode 2 is selected from a double-alkali cathode or multi-alkali cathode material responding to visible light or Cs responding to ultraviolet light 2 Te、Rb 2 Te and CsI materials.
Further, the support column 6 is a ceramic skeleton; still be provided with mount 7 between support column 6 and glass shell 1, mount 7 is used for further stabilizing support column 6.
Furthermore, the effective detection diameter of the photocathode 2 is 50 mm-640 mm, and the photomultiplier is suitable for photomultiplier tubes with different area sizes.
The invention has the beneficial effects that:
1) the mixed large-area photomultiplier based on the silicon electron multiplier is different from the conventional electron avalanche multiplication mixed PMT, the silicon electron multiplier with quick response is adopted, and the high gain of the silicon electron multiplier working in a Geiger (Geiger) mode enables the photomultiplier to obtain better single photon signal detection capability without providing extremely high voltage.
2) The invention adopts a metal disc focusing and single-stage or multi-stage electrostatic focusing electrode structure to realize the effective collection of photoelectrons, solves the problem that the photoelectrons emitted from a photocathode are difficult to be effectively collected by a millimeter-scale silicon electron multiplier, and improves the detection efficiency of the large-area PMT. By adopting a multi-stage electrostatic focusing electrode structure, the photoelectron collection efficiency of more than 90% can be ensured while the effective detection surface of the cathode is improved, and compared with the traditional large-area PMT, the PMT has better time and signal resolution and lower cost.
3) The effective detection diameter of the photocathode can be in the range of 50-640 mm, and the photocathode is suitable for photomultiplier tubes with different area sizes.
4) The mixed large-area photomultiplier provided by the invention has the advantages of large detection area, high reliability, low manufacturing cost, simple structure and easiness in assembly, reduces the problem of process complexity of the traditional photomultiplier, has better performance characteristics and larger detection area, is suitable for the field of high-energy particle detection, and has very high commercial application value.
Drawings
FIG. 1 is a schematic structural view of example 1 of the present invention;
FIG. 2 is a schematic structural diagram of embodiment 2 of the present invention;
FIG. 3 is a schematic diagram of the structure of the focusing electrode in the hybrid large-area photomultiplier tube based on a silicon electron multiplier according to the present invention; wherein, (a) is a metal disc focusing electrode; (b) is a single-stage electrostatic focusing electrode; (c) a multi-stage electrostatic focusing electrode;
FIG. 4 is a schematic diagram of a 20 × 20 array of silicon electron multipliers in a hybrid large-area photomultiplier according to the present invention.
Description of reference numerals:
the solar cell comprises a glass shell 1, a photocathode 2, a focusing electrode 3, an aluminum film 4, a silicon electron multiplier 5, a silicon electron multiplier unit 51, a supporting column 6, a fixing frame 7, an electrode lead 8 and a base 9.
Detailed Description
In order to more clearly explain the technical solution of the present invention, the following detailed description of the present invention is made with reference to the accompanying drawings and specific examples.
The invention designs a large-area mixed PMT read out by a silicon electron multiplier, the silicon electron multiplier with compact structure and quick response is adopted to replace the traditional dynode multiplication system, the metal disc focusing and single-stage or multi-stage electrostatic focusing electrode structure is adopted to realize the effective collection of photoelectrons, and particularly, the multi-stage electrostatic focusing electrode structure is adopted to obtain the large-area mixed PMT with the collection efficiency higher than 90 percent under the condition of ensuring the effective detection surface of a cathode.
Example 1
The hybrid large-area photomultiplier based on a silicon photomultiplier proposed in this embodiment mainly includes a glass housing 1, a photocathode 2, a focusing electrode 3, a silicon photomultiplier 5, and an electrode lead 8 as a power supply and signal lead-out wire. The glass shell 1 is internally provided with a vacuum cavity, the material of the photocathode 2 is deposited on the inner surface of the incident end of the glass shell 1, and incident light penetrates through the input window and hits the photocathode 2 to generate a photoelectric effect to excite the photocathode 2 to emit photoelectrons, so that light radiation is converted into the photoelectrons. The focusing electrode 3 and the silicon electron multiplier 5 are arranged on the central axis of the vacuum cavity and used for collecting photoelectrons from the surface of the photocathode 2, and the power supply line of the electrode lead 8 provides external voltage input for the photocathode 2, the focusing electrode 3 and the silicon electron multiplier 5. Photoelectrons are accelerated under the action of an electric field of the focusing electrode 3 and are injected into the silicon electron multiplier 5 working in a Geiger mode, non-equilibrium carriers generated by the photoelectrons in a P-N junction collide with lattice atoms under the action of a strong electric field in a depletion layer to generate an avalanche multiplication effect of the carriers so as to obtain photocurrent gain, and a gain current signal is output through an electrode lead 8.
The glass shell 1 of the mixed large-area photomultiplier based on the silicon electron multiplier is made of low-background quartz glass, an upper hemispherical surface is evaporated with a cathode material to form a photocathode 2, and a lower hemispherical surface is evaporated with an aluminum reflective substrate material to form an aluminum film 4. The glass shell 1 and the base 9 are sealed by a sealing ring, and a vacuum chamber is arranged in the glass shell 1.
The cathode material of the photomultiplier photocathode 2 is selected from a double-alkali cathode or multi-alkali cathode material responding to visible light or Cs responding to ultraviolet light 2 Te、Rb 2 The effective detection diameter of the photocathode 2 can be between 50mm and 640mm, and the photocathode can be matched with photomultiplier tubes with different area sizes.
If the glass housing 1 of the photomultiplier is designed into a spherical structure as shown in fig. 1, the silicon electron multiplier 5 and related components are placed close to the spherical center of the glass housing 1, so that an approximately centrosymmetric electric field distribution pointing from the spherical center to the spherical surface is formed between the photocathode 2 and the silicon electron multiplier 5, and the paths of photoelectrons from the photocathode 2 to the silicon electron multiplier 5 are approximately equal, which helps to improve the uniformity of photoelectron collection time and improve the time resolution of the photomultiplier.
The focusing electrode 3 of the photomultiplier can adopt a metal disc focusing mode, a single-stage or multi-stage electrostatic focusing mode, and the structures of the focusing electrodes 3 in various modes are shown in figure 3, wherein (a) is a metal disc focusing electrode structure; (b) the electrode is of a single-stage electrostatic focusing electrode structure, and a first-stage annular electrode is coaxially arranged upwards on the edge of a metal disc electrode; (c) the electrode structure is a multi-stage electrostatic focusing electrode structure, a multi-stage annular electrode is coaxially arranged on the edge of a metal disc electrode upwards, the diameter of the annular electrode is gradually increased from bottom to top, all stages of electrodes are distributed in a step mode, and the electrodes are separated by ceramic plates. In the embodiment, a multi-stage electrostatic focusing mode is adopted, so that a smaller focal spot size can be obtained, the size of the silicon electron multiplier 5 array can be correspondingly reduced, and the dark noise of the photomultiplier tube is improved. The high-voltage potential introduced through the electrode lead 8 generates an upper kilovolt acceleration potential difference between the photocathode 2 and the focusing electrode 3 to accelerate and focus photoelectrons, so that the effective collection efficiency of more than 90% is ensured while the cathode detection surface is enlarged.
The size of the silicon electron multiplier unit 51 in the mixed large-area photomultiplier based on the silicon electron multiplier can be (1-100) × (1-100) mm 2 Within the scope, collection arrays of different sizes can be formed by arranging in an M N (M is larger than or equal to N, and M, N is a positive integer) array form, wherein the smaller the array size, the smaller the photomultiplier light noise. The silicon electron multiplier units with different sizes and the array arrangement form can be selected according to the requirements on the size of the detection surface of the silicon electron multiplier and the noise index of the photomultiplier. In the embodiment, silicon electron multipliers 5 arranged in a 20 × 20 array are taken as an example, the structural schematic diagram is shown in fig. 4, and the size of the silicon electron multiplier unit 51 is 3×3mm 2 . The silicon electron multiplier 5 adopts a silicon through hole electrode type silicon electron multiplier, does not need to be connected with an electrode space, reduces peripheral gaps of four spliced edges, and improves the effective photosensitive area, thereby improving the detection efficiency of the photomultiplier. The silicon electronic multiplier 5 works in a Geiger mode, has the advantages of high sensitivity, high gain, good consistency, low loading voltage and the like, and has small volume, compact structure and good time characteristic. To reduce the energy loss of photoelectrons into the silicon electron multiplier 5, a thin entrance window silicon electron multiplier or a non-light window silicon electron multiplier is used. An array of silicon electron multipliers 5 and focusing electrodes 3 are placed on a tray of support posts 6.
The main body of the supporting column 6 is a ceramic framework, is further stabilized in the glass shell 1 through a fixing frame 7, provides reliable support for the internal focusing electrode 3 and the silicon electronic multiplier 5, a through hole, a screw hole and the like are reserved on the supporting column 6, the voltage input of the electrode lead 8 and the signal transmission line are led out from the inside of the supporting column 6, and the process assembly process is simple and easy to operate.
Example 2
The present embodiment is different from embodiment 1 only in that the glass housing 1 of the hybrid large-area photomultiplier is designed into an ellipsoidal structure as shown in fig. 2, and the focusing electrode 3 and the silicon photomultiplier 5 are disposed on the central axis of the ellipsoidal lower hemispherical vacuum container, so that the shape of the glass housing 1 of the photomultiplier is optimized to provide a larger detection area for the photomultiplier with good time uniformity.
In other embodiments, the glass housing 1 of the photomultiplier tube can be designed into a cylindrical structure, and the focusing electrode 3 and the silicon electron multiplier 5 are arranged on the central axis of the vacuum cavity along the incident light direction; the inner surface of the cylindrical end surface of the incident end of the glass shell 1 is evaporated with a cathode material to form a photocathode 2, and the inner surface of the upper half part of the cylindrical side surface is evaporated with an aluminum reflective substrate material to form an aluminum film 4.
The above description is only for the purpose of describing the preferred embodiments of the present invention and is not intended to limit the technical solutions of the present invention, and any known modifications made by those skilled in the art based on the main technical concepts of the present invention are within the technical scope of the present invention.
Claims (9)
1. A mixed large-area photomultiplier based on a silicon electron multiplier is characterized in that: comprises a glass shell (1), a photocathode (2) arranged in the glass shell (1), a focusing electrode (3), a silicon electron multiplier (5) and an electrode lead (8);
the inside of the glass shell (1) is a vacuum cavity; the glass shell (1) is of an ellipsoidal structure, and the focusing electrode (3) and the silicon electron multiplier (5) are arranged on a central shaft in the other hemisphere of the vacuum cavity far away from the incident end hemisphere; a cathode material is evaporated on the inner surface of a hemisphere at the incident end of the glass shell (1) to form a photocathode (2), and an aluminum reflective substrate material is evaporated on the inner surface of the hemisphere to form an aluminum film (4); the silicon electron multiplier (5) is coaxially arranged at the bottom of the focusing electrode (3);
the focusing electrode (3) adopts a metal disc focusing or single-stage electrostatic focusing or multi-stage electrostatic focusing structure;
incident light penetrates through the incident end of the glass shell (1) and irradiates on the photocathode (2) to generate a photoelectric effect, the photocathode (2) is excited to emit photoelectrons, and the photoelectrons are accelerated and focused to the silicon electron multiplier (5) working in a Geiger mode under the action of an electric field of the focusing electrode (3), so that a photoelectron gain current is obtained;
the electrode lead (8) comprises a voltage input end for providing input voltage for the photocathode (2), the focusing electrode (3) and the silicon electron multiplier (5), and a signal output end for leading out a gain current signal generated by the silicon electron multiplier (5).
2. The silicon electron multiplier based hybrid large area photomultiplier of claim 1, wherein: the glass shell structure is characterized by further comprising a supporting assembly, wherein the supporting assembly comprises a base (9) and a supporting column (6) which is arranged on the base (9) and is positioned in the glass shell (1);
a vacuum cavity is formed between the base (9) and the glass shell (1);
the focusing electrode (3) and the silicon electron multiplier (5) are arranged on the supporting column (6);
the electrode lead (8) is led out from the inside of the supporting column (6).
3. The silicon electron multiplier based hybrid large area photomultiplier of claim 2, wherein: the focusing electrode (3) adopts a multi-stage electrostatic focusing structure, and the electrodes are separated by ceramic materials.
4. The silicon electron multiplier based hybrid large area photomultiplier of claim 3, wherein: the silicon electron multiplier (5) is composed of silicon electron multiplier units (51) and is arranged in an M multiplied by N array form, M is larger than or equal to N, and M, N are positive integers; the silicon electron multiplier unit (51) has a size of (1-100) × (1-100) mm 2 。
5. The silicon electron multiplier based hybrid large area photomultiplier of any of claims 1 to 4, wherein: the cathode material of the photocathode (2) is selected from a double-alkali cathode or multi-alkali cathode material responding to visible light or Cs responding to ultraviolet light 2 Te、Rb 2 Te and CsI materials.
6. The silicon electron multiplier based hybrid large area photomultiplier of claim 5, wherein: the silicon electron multiplier (5) adopts a silicon through hole electrode type silicon electron multiplier.
7. The silicon electron multiplier based hybrid large area photomultiplier of claim 6, wherein: the silicon electron multiplier (5) adopts a thin entrance window silicon through hole electrode type silicon electron multiplier or a non-light window silicon through hole electrode type silicon electron multiplier.
8. The silicon electron multiplier based hybrid large area photomultiplier of claim 2, wherein: the supporting column (6) is a ceramic framework; and a fixing frame (7) is also arranged between the supporting column (6) and the glass shell (1).
9. The silicon electron multiplier based hybrid large area photomultiplier of claim 8, wherein: the effective detection diameter of the photocathode (2) is 50-640 mm.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924007A (en) * | 2009-06-10 | 2010-12-22 | 中国科学院高能物理研究所 | Photomultiplier |
| CN103915311A (en) * | 2014-03-20 | 2014-07-09 | 中国科学院高能物理研究所 | Electrostatic focusing micro-channel plate photomultiplier |
| CN105684122A (en) * | 2013-11-01 | 2016-06-15 | 浜松光子学株式会社 | Transmission photocathode |
| CN206322664U (en) * | 2016-12-30 | 2017-07-11 | 海南展创光电技术有限公司 | A kind of MCP types photomultiplier |
| CN206340511U (en) * | 2016-12-30 | 2017-07-18 | 海南展创光电技术有限公司 | A kind of 3 inch photomultiplier electron-optical input systems |
| CN108257844A (en) * | 2018-02-02 | 2018-07-06 | 中国科学院西安光学精密机械研究所 | Gating focusing type photomultiplier |
| CN110828276A (en) * | 2019-11-19 | 2020-02-21 | 金陵科技学院 | Large-area photomultiplier with hybrid electron multiplication system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5475227A (en) * | 1992-12-17 | 1995-12-12 | Intevac, Inc. | Hybrid photomultiplier tube with ion deflector |
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924007A (en) * | 2009-06-10 | 2010-12-22 | 中国科学院高能物理研究所 | Photomultiplier |
| CN105684122A (en) * | 2013-11-01 | 2016-06-15 | 浜松光子学株式会社 | Transmission photocathode |
| CN103915311A (en) * | 2014-03-20 | 2014-07-09 | 中国科学院高能物理研究所 | Electrostatic focusing micro-channel plate photomultiplier |
| CN206322664U (en) * | 2016-12-30 | 2017-07-11 | 海南展创光电技术有限公司 | A kind of MCP types photomultiplier |
| CN206340511U (en) * | 2016-12-30 | 2017-07-18 | 海南展创光电技术有限公司 | A kind of 3 inch photomultiplier electron-optical input systems |
| CN108257844A (en) * | 2018-02-02 | 2018-07-06 | 中国科学院西安光学精密机械研究所 | Gating focusing type photomultiplier |
| CN110828276A (en) * | 2019-11-19 | 2020-02-21 | 金陵科技学院 | Large-area photomultiplier with hybrid electron multiplication system |
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