CN112180460B - Gap detection method and device - Google Patents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/10—Detecting, e.g. by using light barriers
- G01V8/20—Detecting, e.g. by using light barriers using multiple transmitters or receivers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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Abstract
The application provides a gap detection method and device. The application discloses a gap detection method, which is applied to a gap detection device, wherein the gap detection device comprises N photosensitive chips, the N photosensitive chips are arranged along a first direction, and N is an integer larger than 1, and the method comprises the following steps: acquiring N first light intensity values acquired by N photosensitive chips; comparing the N first light intensity values to obtain the maximum M first light intensity values in the N first light intensity values; m is a positive integer; determining first position information of M photosensitive chips for collecting the maximum M first light intensity values; and acquiring second position information of the gaps according to the first position information of the M photosensitive chips. According to the embodiment of the application, the accuracy of gap detection can be improved, and meanwhile, the cost of gap detection can be reduced.
Description
Technical Field
The application relates to the technical field of logistics detection, in particular to a gap detection method and device.
Background
In the related art, the gap detection can be performed using an image sensor, but the cost is high and the post-graphic processing is troublesome. In addition, the gap detection can be carried out through the laser emitting tube and the laser receiving tube (short for laser geminate transistors) which are arranged oppositely, and the manufacturing cost is lower, but the detection result accuracy is not high because the interval between the laser emitting tube and the laser receiving tube is generally more than 2 cm.
Disclosure of Invention
In view of the above, the embodiments of the present application provide a void detection method and apparatus, which can improve the precision of void detection and reduce the cost of void detection.
The embodiment of the application provides a gap detection method, which is applied to a gap detection device, wherein the gap detection device comprises N photosensitive chips, the N photosensitive chips are arranged along a first direction, and N is an integer larger than 1, and the method comprises the following steps:
acquiring N first light intensity values acquired by the N photosensitive chips;
comparing the N first light intensity values to obtain the largest M first light intensity values in the N first light intensity values; m is a positive integer;
determining first position information of M photosensitive chips for collecting the maximum M first light intensity values;
and acquiring second position information of the gaps according to the first position information of the M photosensitive chips.
In one embodiment, N is greater than 2; the comparing the N first light intensity values to obtain the largest M first light intensity values of the N first light intensity values includes:
Starting from a first light intensity value acquired by a first light sensitive chip according to the arrangement sequence of the N light sensitive chips, sequentially taking the first light intensity value acquired by the first light sensitive chip to the first light intensity value acquired by the (N-L+1) th light sensitive chip as the first light intensity value, and comparing the adjacent L first light intensity values each time to obtain at least one maximum first light intensity value; l is less than N;
And after the N first light intensity values are compared, obtaining the largest M first light intensity values in the N first light intensity values.
In one embodiment, the acquiring the second position information of the gap according to the first position information of the M photosensitive chips includes:
Acquiring two first light intensity values acquired by two adjacent photosensitive chips in the maximum M first light intensity values;
Acquiring a first ratio of the two first light intensity values;
And acquiring second position information of the gap according to the first ratio and the first position information of the two adjacent photosensitive chips.
In one embodiment, the light-sensing chip includes a light-emitting element; after comparing the N first light intensity values, further comprising:
When the N first light intensity values are the same, starting the luminous element;
Acquiring N second light intensity values acquired by the N photosensitive chips;
comparing the N second light intensity values to obtain the minimum M second light intensity values in the N second light intensity values;
Determining third position information of M photosensitive chips for collecting the minimum M second light intensity values;
and acquiring second position information of the gap according to the third position information of the M photosensitive chips.
In one embodiment, N is greater than 2; the comparing the N second light intensity values to obtain the minimum M second light intensity values of the N second light intensity values includes:
starting from the second light intensity value collected by the first light sensitive chip according to the arrangement sequence of the N light sensitive chips, sequentially taking the second light intensity value collected by the first light sensitive chip to the second light intensity value collected by the N-L+1 light sensitive chips as the first light intensity value, and comparing every time the adjacent L second light intensity values to obtain at least one minimum second light intensity value; l is less than N;
And after the N second light intensity values are compared, obtaining the minimum M second light intensity values in the N second light intensity values.
In one embodiment, the obtaining the second position information of the gap according to the third position information of the M photosensitive chips includes:
Acquiring two second light intensity values acquired by two adjacent photosensitive chips in the minimum M second light intensity values;
acquiring a second ratio of the two second light intensity values;
And acquiring second position information of the gap according to the second ratio and third position information of the two adjacent photosensitive chips.
In one embodiment, the gap detection device further comprises a light diffusion plate, the light diffusion plate is located on the photosensitive chip, and the photosensitive direction of the photosensitive chip faces to the light diffusion plate;
the distance between two adjacent photosensitive chips is smaller than 2 cm.
In one embodiment, the distance between two adjacent photosensitive chips is 1 cm.
In one embodiment, the effective data bit of the photosensitive chip is 16bits.
The embodiment of the application also provides a gap detection device, which comprises:
a bottom plate;
The N photosensitive chips are positioned on the bottom plate and are arranged along a first direction, and the N photosensitive chips are configured to collect N first light intensity values; n is an integer greater than 1;
The processing chip is configured to acquire the largest M first light intensity values in the N first light intensity values, determine first position information of M photosensitive chips for acquiring the largest M first light intensity values, acquire second position information of a gap according to the first position information of the M photosensitive chips, and M is a positive integer.
In the embodiment of the application, since the N photosensitive chips are arranged along the first direction, the detection range of the N photosensitive chips is continuous, which is favorable for improving the precision of gap detection, therefore, the N first light intensity values are collected through the N photosensitive chips, the maximum M first light intensity values in the N first light intensity values are obtained through comparing the N first light intensity values, the first position information of the M photosensitive chips for collecting the maximum M first light intensity values is determined, the second position information of the gap is obtained according to the first position information of the M photosensitive chips, the precision of gap detection can be improved, meanwhile, the data processing is simple, and the cost of gap detection can be reduced.
Drawings
Fig. 1 is a schematic structural view of a gap detecting device according to an embodiment of the present application;
FIG. 2 is a flow chart of a void detection method according to an embodiment of the present application;
FIG. 3 is a flow chart of another void detection method according to an embodiment of the present application.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the application. Rather, they are merely examples of apparatus and methods consistent with aspects of the application as detailed in the accompanying claims.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any or all possible combinations of one or more of the associated listed items.
It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, these information should not be limited by these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of the application. The word "if" as used herein may be interpreted as "at … …" or "at … …" or "in response to a determination" depending on the context.
Some embodiments of the application are described in detail below with reference to the accompanying drawings. The following embodiments and features of the embodiments may be combined with each other without conflict.
The embodiment of the application provides a gap detection method. The gap detection method is applied to a gap detection device. As shown in fig. 1, the gap detecting device includes a base plate 11, N photosensitive chips 12, a light diffusing plate 13, and a processing chip (not shown). The N photosensitive chips 12 are disposed on the base plate 11 and are arranged at equal intervals along the first direction X, and the photosensitive chips 12 are used for detecting the light intensity value. The light-diffusing plate 13 is located on the light-sensing chip 12, the light-sensing direction of the light-sensing chip 12 faces the light-diffusing plate 13, and the light-diffusing plate 13 is used for expanding the distribution range of light and making the light intensity different at different positions within the distribution range. When two or more objects 14 are placed on one side of the light diffusion plate 13 far away from the bottom plate 11, the processing chip is used for processing and analyzing the light intensity value collected by the photosensitive chip 12 to obtain the position information of the gap 15 between two adjacent objects 14. As shown in fig. 2, the void detection method includes the following steps 201 to 204:
In step 201, N first light intensity values collected by N photosensitive chips are obtained.
In the present embodiment, the photosensitive chip 12 is used for sensing a first light intensity value of ambient light. Each of the photo-sensing chips 12 senses the ambient light to obtain a first light intensity value, and thus, the N photo-sensing chips obtain N first light intensity values. The processing chip may acquire N first light intensity values acquired by the N photosensitive chips 12.
In this embodiment, N is greater than 2.
In step 202, comparing the N first light intensity values to obtain the largest M first light intensity values of the N first light intensity values; m is a positive integer.
In this embodiment, M is equal to 2. Of course, M may be greater than 2.
In the present embodiment, each of the photosensitive chips 12 is provided with a corresponding chip identifier for uniquely identifying the chip. For example, the chip of the first photosensitive chip 121 arranged in the first direction X is denoted by 001, the chip of the second photosensitive chip 122 is denoted by 002, … …, and the chip of the nth photosensitive chip 12 is denoted by 00N. For example, when N is 8, the chip of the third photosensitive chip 123 is 003, the chip of the fourth photosensitive chip 124 is 004, the chip of the fifth photosensitive chip 125 is 005, the chip of the sixth photosensitive chip 126 is 006, the chip of the seventh photosensitive chip 127 is 007, and the chip of the eighth photosensitive chip 128 is 008.
In this embodiment, N first light intensity values may be compared as follows:
Starting from the first light intensity value collected by the first light sensitive chip 12 according to the arrangement sequence of the N light sensitive chips 12, sequentially taking the first light intensity value collected by the first light sensitive chip to the first light intensity value collected by the N-L+1th light sensitive chip as the first light intensity value, and obtaining and comparing adjacent L first light intensity values each time to obtain at least one maximum first light intensity value, wherein L is smaller than N. And after the N first light intensity values are compared, obtaining the largest M first light intensity values in the N first light intensity values. Thus, the operation efficiency can be improved, and the rate of gap detection can be further improved.
The comparison method of the N first light intensity values will be described below by taking N as 8, L as 4, and M as 2 as an example. First, taking the photosensitive chip 12 with the chip identifier 001 as the head, 4 first light intensity values, such as a first light intensity value E1 collected by the photosensitive chip 12 with the chip identifier 001, a first light intensity value E2 collected by the photosensitive chip 12 with the chip identifier 002, a first light intensity value E3 collected by the photosensitive chip 12 with the chip identifier 003, a first light intensity value E4 collected by the photosensitive chip 12 with the chip identifier 004, and the like, are obtained. For example, the first light intensity value E1, the first light intensity value E2, the first light intensity value E3, and the first light intensity value E4 are 20000, 20020, 20050, 30000 in this order. Then, the obtained first light intensity value E1, first light intensity value E2, first light intensity value E3, and first light intensity value E4 are compared to obtain a maximum first light intensity value, which is the first light intensity value E4, that is, 30000.
Next, the first light intensity value E2 collected by the photosensitive chip 12 with the chip identifier 002, the first light intensity value E3 collected by the photosensitive chip 12 with the chip identifier 003, the first light intensity value E4 collected by the photosensitive chip 12 with the chip identifier 004, the first light intensity value E5 collected by the photosensitive chip 12 with the chip identifier 005, and other 4 first light intensity values are obtained by taking the photosensitive chip 12 with the chip identifier 002 as the head. For example, the first light intensity value E5 is 50000. Then, the obtained first light intensity value E2, first light intensity value E3, first light intensity value E4, and first light intensity value E5 are compared to obtain a maximum first light intensity value, which is the first light intensity value E5, i.e., 50000.
Next, taking the photosensitive chip 12 with the chip mark 003 as the head, 4 first light intensity values such as a first light intensity value E3 collected by the photosensitive chip 12 with the chip mark 003, a first light intensity value E4 collected by the photosensitive chip 12 with the chip mark 004, a first light intensity value E5 collected by the photosensitive chip 12 with the chip mark 005, and a first light intensity value E6 collected by the photosensitive chip 12 with the chip mark 006 are obtained. For example, the first light intensity value E6 is 50000. Then, the obtained first light intensity value E3, the first light intensity value E4, the first light intensity value E5 and the first light intensity value E6 are compared to obtain two largest first light intensity values, wherein the two largest first light intensity values are the first light intensity value E5 and the first light intensity value E6, namely, 50000.
Next, taking the photosensitive chip 12 with the chip mark 004 as the head, 4 first light intensity values such as a first light intensity value E4 collected by the photosensitive chip 12 with the chip mark 004, a first light intensity value E5 collected by the photosensitive chip 12 with the chip mark 005, a first light intensity value E6 collected by the photosensitive chip 12 with the chip mark 006, a first light intensity value E7 collected by the photosensitive chip 12 with the chip mark 007 and the like are obtained. For example, the first light intensity value E7 is 30000. Then, the obtained first light intensity value E4, the first light intensity value E5, the first light intensity value E6 and the first light intensity value E7 are compared to obtain two largest first light intensity values, wherein the two largest first light intensity values are the first light intensity value E5 and the first light intensity value E6, namely, 50000.
Next, taking the photosensitive chip 12 with the chip identifier 005 as the head, 4 first light intensity values, such as a first light intensity value E5 collected by the photosensitive chip 12 with the chip identifier 005, a first light intensity value E6 collected by the photosensitive chip 12 with the chip identifier 006, a first light intensity value E7 collected by the photosensitive chip 12 with the chip identifier 007, and a first light intensity value E8 collected by the photosensitive chip 12 with the chip identifier 008, are obtained. For example, the first light intensity value E8 is 20050. Then, the obtained first light intensity value E5, the first light intensity value E6, the first light intensity value E7 and the first light intensity value E8 are compared to obtain two largest first light intensity values, wherein the two largest first light intensity values are the first light intensity value E5 and the first light intensity value E6, namely, 50000.
After the comparison of the 8 first light intensity values is completed, the largest 2 first light intensity values of the 8 first light intensity values, namely the first light intensity value E5 and the first light intensity value E6, are obtained, namely 50000.
Of course, the value N, L, M is not limited to the above-listed values, and the values of the first light intensity value E5 and the first light intensity value E6 may be unequal, for example, the value of the first light intensity value E5 may be 45000 and the value of the first light intensity value E6 may be 55000, but not limited thereto.
In step 203, first position information of M photosensitive chips that collect the maximum M first light intensity values is determined.
In the present embodiment, the processing chip stores the chip identifications of the N photosensitive chips 12 and the corresponding first position information. The chip identifiers of the N photosensitive chips 12 are in one-to-one correspondence with the first position information of the N photosensitive chips 12. For example, the positional information of the photosensitive chip 12 may be coordinates. For another example, the coordinate information of the first photosensitive chip 121, the second photosensitive chip 122, the third photosensitive chip 123, the fourth photosensitive chip 124, the fifth photosensitive chip 125, the sixth photosensitive chip 126, the seventh photosensitive chip 127, and the eighth photosensitive chip 128 is sequentially 1,2, 3, 4, 5,6, 7, and 8.
In this embodiment, the processing chip may acquire the corresponding first position information according to the chip identifiers of the M photosensitive chips that acquire the M first light intensity values that are the largest. For example, after the chip identifiers 005 and 006 of the two photosensitive chips of the first light intensity value E5 and the first light intensity value E6 are collected and the processing chip obtains the chip identifiers 005 and 006, the first position information of the photosensitive chip 12 of the chip identifiers 005 and 006 can be obtained according to the chip identifiers 005 and 006, for example, the first position information of the photosensitive chip 125 and the first position information of the photosensitive chip 126 of the chip identifiers 005 and 006 are sequentially 5 and 6.
In step 204, second position information of the gap is obtained according to the first position information of the M photosensitive chips.
In this embodiment, the first light intensity value collected by the photosensitive chip 12 with a small distance from the gap 15 is larger than the first light intensity value collected by the photosensitive chip 12 with a large distance from the gap 15, for example, the distance between the photosensitive chip 12 with a chip mark of 005 and the gap 15 is smaller than the distance between the photosensitive chip 12 with a chip mark of 004 and the gap 15, and the first light intensity value E5 collected by the photosensitive chip 12 with a chip mark of 005 is larger than the first light intensity value E4 collected by the photosensitive chip 12 with a chip mark of 004. Therefore, the second position information of the gap can be determined according to the M first light intensity values with the largest light intensity values and the first position information of the corresponding M photosensitive chips.
In this embodiment, first, two first light intensity values acquired by two adjacent light-sensitive chips in the largest M first light intensity values are acquired, then, a first ratio of the two first light intensity values is acquired, and then, second position information of the gap is acquired according to the first ratio and first position information of the two adjacent light-sensitive chips. For example, the positions of the photosensitive chips 125 and 126 corresponding to the largest two first light intensity values E5 and E6 are adjacent to each other, the two first light intensity values E5 and E6 collected by the photosensitive chips 125 and 126 are obtained, then a first ratio 1:1 of the first light intensity values E5 and E6 is obtained, and then, according to the first ratio 1:1 and the first position information 5 and 6 of the photosensitive chips 125 and 126, the second position information of the gap 15 is calculated to be 5.5, that is, the center position of the projection of the gap 15 in the first direction X between the photosensitive chips 125 and 126 is calculated.
It should be noted that, the method for obtaining the second position information of the gap according to the first ratio and the first position information of the two adjacent photosensitive chips may be derived from theory or may be summarized from experiments.
In the present embodiment, since the N photosensitive chips 12 are arranged in the first direction X, the detection ranges of the N photosensitive chips 12 are continuous, and the accuracy of void detection can be improved.
In addition, in the present embodiment, the photosensitive chip 12 converts the current signal generated by the photosensitive into a digital signal, the digital signal includes the information of the first light intensity value, and the digital signal can be directly read.
In the present embodiment, since the light diffusion plate 13 can diffuse light, the distribution range of light can be enlarged and the light intensity can be made different at different positions within the distribution range, and therefore, the arrangement density of the photosensitive chips can be reduced, and the cost can be reduced.
In the present embodiment, the material of the diffusion plate 13 may be a transparent material or a translucent material.
In this embodiment, the interval between two adjacent photosensitive chips 12 is smaller than 2 cm. For example, the interval between two adjacent ones of the photosensitive chips 12 is 1 cm.
In this embodiment, the effective data bit of the photosensitive chip 12 is 16bits, that is, the first light intensity value detected by the photosensitive chip 12 has 65536 (2 16) levels, the light sensitivity of the photosensitive chip 12 can reach 0.001lux, the resolution capability of the photosensitive chip 12 to the first light intensity value is very strong, the detection precision is higher, and the improvement of the gap detection precision is facilitated.
In this embodiment, the gap detection method and the gap detection device may be applied to the field of logistics, and detect gaps (gaps) between the boxes, so as to distinguish the boxes, and further locate the boxes, so that when packaging the articles, it may be ensured that the articles are put into the correct boxes.
In this embodiment, since the N photosensitive chips are arranged along the first direction, the detection ranges of the N photosensitive chips are continuous, which is favorable for improving the accuracy of void detection, so that the N first light intensity values are collected by the N photosensitive chips, the maximum M first light intensity values among the N first light intensity values are obtained by comparing the N first light intensity values, the first position information of the M photosensitive chips collecting the maximum M first light intensity values is determined, and the second position information of the void is obtained according to the first position information of the M photosensitive chips, which can improve the accuracy of void detection.
The embodiment of the application also provides a gap detection method. In the present embodiment, the light emitting element is integrated on the light sensing chip 12. As shown in fig. 3, the void detection method includes the following steps 301 to 307:
in step 301, N first light intensity values collected by N photosensitive chips are obtained.
In this embodiment, step 301 is similar to step 201 described above, and will not be described again.
In this embodiment, N is greater than 2.
In step 302, N first light intensity values are compared.
In this embodiment, the comparison method of the N first light intensity values in step 202 is similar to that described above, and will not be described herein.
In step 303, when the N first light intensity values are the same, the light emitting element is turned on.
In this embodiment, the first light intensity value E1, the core first light intensity value E2, the first light intensity value E3, the first light intensity value E4, the first light intensity value E5, the core first light intensity value E6, the first light intensity value E7, and the first light intensity value E8 are 30000, 30020, 30030, 30020, 30010, 30050, 30000, 30080 in this order.
In the present embodiment, when the third ratio of the fluctuation amplitude of the N first light intensity values to the median value is smaller than the specified ratio, it is determined that the N first light intensity values are identical. For example, the specified ratio may be 10%, but is not limited thereto. The fluctuation amplitude is the difference between the maximum value and the minimum value in the N first light intensity values. The fluctuation amplitude of the first light intensity value E1, the first light intensity value E2, the first light intensity value E3, the first light intensity value E4, the first light intensity value E5, the first light intensity value E6, the first light intensity value E7 and the first light intensity value E8 is 80, the median value is 30040, the third ratio of the fluctuation amplitude to the median value is 0.26%, less than 10%, and it is determined that 8 first light intensity values are identical.
In this embodiment, when the N first light intensity values are the same, the light emitting element is turned on. The light emitting member emits light in a direction away from the base plate 11 after being turned on, i.e., toward the light diffusing plate 13, or, in other words, toward the object 14.
In this embodiment, the light emitted by the light emitting element is reflected back after encountering the object 14, and the light reflected back by the object 14 can be detected by the light sensing chip.
In step 304, N second light intensity values collected by the N photosensitive chips are obtained.
In this embodiment, step 304 is similar to step 201 described above.
In the present embodiment, the light intensity sensed by the light sensing chip 12 is mainly contributed by the light emitted by the light emitting member, and the light sensed by the light sensing chip 12 also includes ambient light.
In this embodiment, N is 8, L is 4, and M is 2. In this embodiment, the 8 second light intensity values collected by the 8 photosensitive chips are respectively a second light intensity value F1 collected by the photosensitive chip 12 with the chip identifier 001, a second light intensity value F2 collected by the photosensitive chip 12 with the chip identifier 002, a second light intensity value F3 collected by the photosensitive chip 12 with the chip identifier 003, a second light intensity value F4 collected by the photosensitive chip 12 with the chip identifier 004, a second light intensity value F5 collected by the photosensitive chip 12 with the chip identifier 005, a second light intensity value F6 collected by the photosensitive chip 12 with the chip identifier 006, a second light intensity value F7 collected by the photosensitive chip 12 with the chip identifier 007, and a second light intensity value F8 collected by the photosensitive chip 12 with the chip identifier 008.
In this embodiment, the second light intensity value F1, the second light intensity value F2, the second light intensity value F3, the second light intensity value F4, the second light intensity value F5, the second light intensity value F6, the second light intensity value F7, and the second light intensity value F8 are 60000, 60010, 60030, 60050, 20020, 20010, 60020, 60000 in this order.
In step 305, the N second light intensity values are compared to obtain the smallest M second light intensity values of the N second light intensity values.
In this embodiment, the second light intensity values collected from the first photosensitive chip may be sequentially started from the second light intensity value collected from the first photosensitive chip to the second light intensity value collected from the N-l+1th photosensitive chip according to the arrangement sequence of the N photosensitive chips, and each time, L second light intensity values adjacent to each other are obtained and compared, so as to obtain at least one minimum second light intensity value, where L is smaller than N, and when the N second light intensity values are compared, the minimum M second light intensity values in the N second light intensity values are obtained.
305 In this embodiment is similar to step 202 described above, and will not be described again.
In this embodiment, the 8 second light intensity values are compared, and the smallest two second light intensity values among the 8 obtained second light intensity values are the second light intensity value F5 and the second light intensity value F6.
In step 306, third position information of M photosensitive chips that collect the minimum M second light intensity values is determined.
In this embodiment, 306 in this embodiment is similar to step 203 described above.
In this embodiment, according to the minimum two second light intensity values of the 8 second light intensity values being the second light intensity value F5 and the second light intensity value F6, the third position information of the photosensitive chip 125 and the photosensitive chip 126 for collecting the second light intensity value F5 and the second light intensity value F6 can be determined. The third position information of the photosensitive chip 125 and the photosensitive chip 126 is 5 and 6 in sequence.
In step 307, second position information of the gap is obtained according to third position information of the M photosensitive chips.
In this embodiment, the method for acquiring the second position information of the gap according to the third position information of the M photosensitive chips is: firstly, acquiring two second light intensity values acquired by two adjacent light sensitive chips in the minimum M second light intensity values, then acquiring a second ratio of the two second light intensity values, and then acquiring second position information of a gap according to the second ratio and third position information of the two adjacent light sensitive chips.
In this embodiment, 307 in this embodiment is similar to step 204 described above.
In this embodiment, the second light intensity value collected by the photosensitive chip 12 with a small distance from the gap 15 is smaller than the second light intensity value collected by the photosensitive chip 12 with a large distance from the gap 15, for example, the distance between the photosensitive chip 12 with a chip mark 005 and the gap 15 is smaller than the distance between the photosensitive chip 12 with a chip mark 004 and the gap 15, and the second light intensity value F5 collected by the photosensitive chip 12 with a chip mark 005 is smaller than the second light intensity value F4 collected by the photosensitive chip 12 with a chip mark 004. Therefore, the second position information of the gap can be determined according to the M second light intensity values with the largest light intensity values and the third position information of the corresponding M photosensitive chips.
In this embodiment, the two light-sensing chips 125 and 126 corresponding to the two minimum light-intensity values F5 and F6 are adjacent to each other, the two light-intensity values F5 and F6 collected by the light-sensing chips 125 and 126 are obtained, then the first ratio of the obtained second light-intensity values F5 and F6 is approximately 1:1, and then the second position information of the gap 15 is calculated to be 5.5 according to the first ratio 1:1 and the third position information 5 and 6 of the light-sensing chips 125 and 126, that is, the central position of the projection of the gap 15 in the first direction X between the light-sensing chips 125 and 126.
The embodiment of the application provides a gap detection device which is used for realizing the gap detection method in any embodiment. As shown in fig. 1, the gap detection device includes: a base plate 11, N photosensitive chips 12, and a processing chip (not shown).
In this embodiment, N photosensitive chips 12 are located on the bottom plate 11 and are arranged along the first direction X, and the N photosensitive chips 12 are configured to collect N first light intensity values; n is an integer greater than 1.
In this embodiment, the processing chip is configured to obtain the largest M first light intensity values of the N first light intensity values, determine first position information of M photosensitive chips that collect the largest M first light intensity values, and obtain second position information of the gap according to the first position information of the M photosensitive chips, where M is a positive integer.
In this embodiment, since the N photosensitive chips are arranged along the first direction, the detection ranges of the N photosensitive chips are continuous, which is favorable for improving the accuracy of void detection, so that the N first light intensity values are collected by the N photosensitive chips, the maximum M first light intensity values among the N first light intensity values are obtained by comparing the N first light intensity values, the first position information of the M photosensitive chips collecting the maximum M first light intensity values is determined, and the second position information of the void is obtained according to the first position information of the M photosensitive chips, which can improve the accuracy of void detection.
The implementation process of the functions and roles of each unit in the above device is specifically shown in the implementation process of the corresponding steps in the above method, and will not be described herein again.
In the application, the device embodiment and the method embodiment can be mutually complemented under the condition of no conflict. The apparatus embodiments described above are merely illustrative, wherein the elements illustrated as separate elements may or may not be physically separate, and the elements shown as elements may or may not be physical elements, may be located in one place, or may be distributed over a plurality of network elements. Some or all of the modules may be selected according to actual needs to achieve the purposes of the present application. Those of ordinary skill in the art will understand and implement the present application without undue burden.
Those skilled in the art will appreciate that all or part of the steps in implementing the methods of the embodiments described above may be implemented by a program stored in a storage medium, including instructions for causing a device (which may be a single-chip microcomputer, a chip or the like) or a processor (processor) to perform all or part of the steps of the methods of the embodiments of the application. And the aforementioned storage medium includes: a usb disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
The foregoing description of the preferred embodiments of the application is not intended to be limiting, but rather to enable any modification, equivalent replacement, improvement or the like to be made within the spirit and principles of the application.
Claims (8)
1. A void detection method, applied to a void detection device, the void detection device including N photosensitive chips arranged along a first direction, N being an integer greater than 1, the method comprising:
acquiring N first light intensity values acquired by the N photosensitive chips;
comparing the N first light intensity values to obtain the largest M first light intensity values in the N first light intensity values; m is a positive integer;
determining first position information of M photosensitive chips for collecting the maximum M first light intensity values;
Acquiring second position information of the gaps according to the first position information of the M photosensitive chips;
n is greater than 2; the comparing the N first light intensity values to obtain the largest M first light intensity values of the N first light intensity values includes:
Starting from a first light intensity value acquired by a first light sensitive chip according to the arrangement sequence of the N light sensitive chips, sequentially taking the first light intensity value acquired by the first light sensitive chip to the first light intensity value acquired by the (N-L+1) th light sensitive chip as the first light intensity value, and comparing the adjacent L first light intensity values each time to obtain at least one maximum first light intensity value; l is less than N;
after the N first light intensity values are compared, obtaining the largest M first light intensity values in the N first light intensity values;
the obtaining the second position information of the gap according to the first position information of the M photosensitive chips includes:
Acquiring two first light intensity values acquired by two adjacent photosensitive chips in the maximum M first light intensity values;
Acquiring a first ratio of the two first light intensity values;
And acquiring second position information of the gap according to the first ratio and the first position information of the two adjacent photosensitive chips.
2. The void detection method of claim 1, wherein the light-sensitive chip comprises a light-emitting element; after comparing the N first light intensity values, further comprising:
When the N first light intensity values are the same, the light-emitting element is turned on;
Acquiring N second light intensity values acquired by the N photosensitive chips;
comparing the N second light intensity values to obtain the minimum M second light intensity values in the N second light intensity values;
Determining third position information of M photosensitive chips for collecting the minimum M second light intensity values;
and acquiring second position information of the gap according to the third position information of the M photosensitive chips.
3. The void detection method of claim 2, wherein N is greater than 2; the comparing the N second light intensity values to obtain the minimum M second light intensity values of the N second light intensity values includes:
starting from the second light intensity value collected by the first light sensitive chip according to the arrangement sequence of the N light sensitive chips, sequentially taking the second light intensity value collected by the first light sensitive chip to the second light intensity value collected by the N-L+1 light sensitive chips as the first light intensity value, and comparing every time the adjacent L second light intensity values to obtain at least one minimum second light intensity value; l is less than N;
And after the N second light intensity values are compared, obtaining the minimum M second light intensity values in the N second light intensity values.
4. The gap detection method according to claim 3, wherein the acquiring second position information of the gap according to the third position information of the M photosensitive chips includes:
Acquiring two second light intensity values acquired by two adjacent photosensitive chips in the minimum M second light intensity values;
acquiring a second ratio of the two second light intensity values;
And acquiring second position information of the gap according to the second ratio and third position information of the two adjacent photosensitive chips.
5. The void detection method according to claim 1, wherein the void detection device further comprises a light-diffusing plate on the light-sensing chip, the light-sensing direction of the light-sensing chip being directed toward the light-diffusing plate;
the distance between two adjacent photosensitive chips is smaller than 2 cm.
6. The method of claim 5, wherein a distance between two adjacent photosensitive chips is 1 cm.
7. The gap detection method according to claim 1, wherein the effective data bit of the photosensitive chip is 16bits.
8. A void detection device, comprising:
a bottom plate;
The N photosensitive chips are positioned on the bottom plate and are arranged along a first direction, and the N photosensitive chips are configured to collect N first light intensity values; n is an integer greater than 1;
The processing chip is configured to acquire the largest M first light intensity values in the N first light intensity values, determine first position information of M photosensitive chips for acquiring the largest M first light intensity values, acquire second position information of gaps according to the first position information of the M photosensitive chips, and M is a positive integer; n is greater than 2; the processing chip is configured to compare the N first light intensity values, and acquire the largest M first light intensity values of the N first light intensity values, including:
Starting from a first light intensity value acquired by a first light sensitive chip according to the arrangement sequence of the N light sensitive chips, sequentially taking the first light intensity value acquired by the first light sensitive chip to the first light intensity value acquired by the (N-L+1) th light sensitive chip as the first light intensity value, and comparing the adjacent L first light intensity values each time to obtain at least one maximum first light intensity value; l is less than N;
after the N first light intensity values are compared, obtaining the largest M first light intensity values in the N first light intensity values;
The processing chip is further configured to obtain second position information of the gap according to the first position information of the M photosensitive chips, including:
Acquiring two first light intensity values acquired by two adjacent photosensitive chips in the maximum M first light intensity values;
Acquiring a first ratio of the two first light intensity values;
And acquiring second position information of the gap according to the first ratio and the first position information of the two adjacent photosensitive chips.
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