CN112164975B - Beam combining method and beam combining device for semiconductor laser chip - Google Patents
Beam combining method and beam combining device for semiconductor laser chip Download PDFInfo
- Publication number
- CN112164975B CN112164975B CN202011032905.9A CN202011032905A CN112164975B CN 112164975 B CN112164975 B CN 112164975B CN 202011032905 A CN202011032905 A CN 202011032905A CN 112164975 B CN112164975 B CN 112164975B
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- optical fiber
- fiber cladding
- chips
- cladding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4206—Optical features
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention provides a beam combining method and a beam combining device of a semiconductor laser chip, and aims to solve the problems of low beam combining laser energy and low power beam quality ratio in the conventional laser beam combining mode. The beam combining method of the semiconductor laser chip comprises the following steps: manufacturing a diffraction structure on the surface of a cladding of an optical fiber, and manufacturing a total reflection film at one end of the optical fiber; secondly, arranging a plurality of semiconductor laser chips outside the optical fiber cladding; and step three, light emitted by the semiconductor laser chip enters the fiber core through the fiber cladding which is fully distributed with the diffraction structure, and is finally output from the other end of the fiber, so that laser beam combination is realized.
Description
Technical Field
The invention belongs to the field of semiconductor lasers and optical fiber lasers, and particularly relates to a beam combining method and a beam combining device for semiconductor laser chips.
Background
The semiconductor laser has been widely used in the fields of material processing, medical cosmetology, laser radar, aerospace and the like, wherein the high-power fiber laser used for material processing is particularly developed, and the semiconductor laser chip is used as a pump source of the fiber laser to realize high conversion efficiency.
Semiconductor lasers need to enter optical fibers in a coupling mode, and the existing laser beam combining methods include spatial beam combining, coarse/fine/dense wavelength beam combining, polarization beam combining, optical fiber beam bundling/beam combining and combinations of the beam combining methods, but the beam combining methods are limited by space and can only carry out beam combining of a limited number of semiconductor lasers, and the beam combining laser energy is low.
At present, a semiconductor laser bar adopts a stacked array beam combination method, the design concept is a space building block type, but the method has thermal aggregation, so that the gradient of energy density is further intensified, the service life of the bar is shortened, the quality of a power beam of laser after a large amount of integration is low, the requirement of remote laser energy transmission cannot be met, and the laser power density similar to that of a solid laser cannot be obtained.
In summary, the semiconductor laser is limited by factors such as space size and cooling heat management level, the current beam combining method can only achieve beam combining of a limited number of semiconductor laser units, and the laser stack array achieves laser energy superposition, but the beam divergence angle cannot be compressed, the small beam divergence angle required by high-power laser cannot meet the technical index requirement, and a high power beam quality ratio cannot be obtained.
Disclosure of Invention
The invention aims to solve the problems of low beam combination laser energy and low power beam quality ratio in the conventional laser beam combination mode, and provides a beam combination method and a beam combination device of a semiconductor laser chip.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a beam combination method of a semiconductor laser chip is characterized by comprising the following steps:
manufacturing a diffraction structure on the surface of a cladding of an optical fiber, and manufacturing a total reflection film at one end of the optical fiber;
secondly, arranging a plurality of semiconductor laser chips outside the optical fiber cladding;
and step three, light emitted by the semiconductor laser chip enters the fiber core through the fiber cladding which is fully distributed with the diffraction structure, and is finally output from the other end of the fiber, so that laser beam combination is realized.
Further, in the second step, the semiconductor laser chips are fixed on the outer side of the optical fiber cladding through the arc-shaped packaging heat sink, and the inner surface of the arc-shaped packaging heat sink is polished, so that light leaked from the optical fiber cladding is reflected back to the optical fiber core.
Further, in the second step, the semiconductor laser chip is a semiconductor laser bar or a semiconductor laser single tube; the diffractive structure is a diffraction grating.
Further, in the second step, the wavelengths of the plurality of semiconductor laser chips are the same or different.
Further, in the second step, the plurality of semiconductor laser chips are circumferentially arranged along the outer side of the optical fiber cladding, or the plurality of semiconductor laser chips are axially arranged along the outer side of the optical fiber cladding, or the plurality of semiconductor laser chips are circumferentially arranged and axially arranged along the outer side of the optical fiber cladding.
Meanwhile, the invention also provides a beam combining device of the semiconductor laser chip, which comprises an optical fiber and a plurality of semiconductor laser chips; the surface of the optical fiber cladding is provided with a diffraction structure, and one end of the optical fiber is provided with a total reflection film; the semiconductor laser chips are arranged on the outer side of the optical fiber cladding, light emitted by the semiconductor laser chips enters the optical fiber core through the optical fiber cladding which is fully distributed with the diffraction structure, and is finally output from the other end of the optical fiber, so that laser beam combination is realized.
Furthermore, the semiconductor laser chips are fixed on the outer side of the optical fiber cladding through an arc-shaped packaging heat sink, and the inner surface of the arc-shaped packaging heat sink is polished, so that light leaked from the optical fiber cladding is reflected to the optical fiber core.
Furthermore, the semiconductor laser chip is a semiconductor laser bar or a semiconductor laser single tube; the diffractive structure is a diffraction grating.
Further, the wavelengths of the plurality of semiconductor laser chips are the same or different.
Further, the plurality of semiconductor laser chips are circumferentially arranged along the outer side of the optical fiber cladding, or the plurality of semiconductor laser chips are axially arranged along the outer side of the optical fiber cladding, or the plurality of semiconductor laser chips are circumferentially arranged and axially arranged along the outer side of the optical fiber cladding.
Compared with the prior art, the technical scheme of the invention has the following technical effects:
1. according to the beam combining method and the beam combining device, the diffraction structure is manufactured on the surface of the optical fiber cladding, so that the output laser of the distributed semiconductor laser chip enters the diameter of the optical fiber core after being diffracted by the optical fiber cladding and is output from one end face of the optical fiber, and high power beam quality ratio is obtained.
2. According to the beam combining method and the beam combining device, the semiconductor laser chips are distributed along the optical fiber cladding, so that the heat gathering effect is solved, and the heat management cost is reduced; meanwhile, the number of the beam combination semiconductor laser chips can be greatly increased, and higher-power and higher-quality output is realized; in addition, multi-wavelength beam combination can be performed, and requirements of different fields are met.
Drawings
FIG. 1 is a cross-sectional view of a beam combiner for semiconductor laser chips according to the present invention;
fig. 2 is a schematic longitudinal sectional view of a beam combining device of a semiconductor laser chip according to the present invention.
Reference numerals: 1-semiconductor laser chip, 2-optical fiber, 3-arc packaging heat sink, 4-total reflection film, 5-diffraction structure, 6-combined laser, 21-optical fiber cladding, and 22-optical fiber core.
Detailed Description
The invention is described in further detail below with reference to the following figures and specific examples:
the invention provides a distributed beam combination method according to the light diffraction principle, which is characterized in that the surface of an optical fiber cladding layer is processed, so that the surface of the optical fiber cladding layer is fully distributed with diffraction structures, and a semiconductor laser chip enters the diameter of an optical fiber core through the diffraction structures on the surface of the optical fiber cladding layer. Meanwhile, the distributed arrangement of the semiconductor laser chips greatly reduces the heat gathering effect, thereby reducing the influence of heat on the quality and reliability of the light beam. In addition, the method can combine a large number of semiconductor laser chips to realize a fiber laser with higher power.
As shown in fig. 1, the beam combining device of the semiconductor laser chip provided by the present invention includes an optical fiber 2 and a plurality of semiconductor laser chips 1; the surface of the optical fiber cladding 21 is provided with a diffraction structure 5; meanwhile, one end of the optical fiber 2 is provided with a total reflection film 4, so that the laser entering the optical fiber 2 is output from the other end of the optical fiber 2; the semiconductor laser chips 1 are arranged outside the optical fiber cladding 21, and light emitted by the semiconductor laser chips 1 enters the optical fiber core 22 through the optical fiber cladding 21 which is fully distributed on the diffraction structure 5, and is finally output from the other end of the optical fiber 2, so that laser beam combination is realized. The diffraction structure 5 of the present invention may be a diffraction grating, or may be any other structure having a diffraction function, as long as it has a diffraction function.
As shown in fig. 2, a plurality of semiconductor laser chips 1 are fixed to the outside of the optical fiber cladding 21 by the arc-shaped encapsulating heat sink 3, and the inner surface of the arc-shaped encapsulating heat sink 3 is polished to form a mirror surface, thereby reflecting light leaking from the optical fiber cladding 21 back to the optical fiber core 22.
The semiconductor laser chip 1 of the invention is a semiconductor laser bar or a semiconductor laser single tube, and the wavelengths of the semiconductor laser chips 1 are the same or different.
The arrangement position of the semiconductor laser chip 1 outside the optical fiber cladding 21 is not limited in the present invention, and various arrangements are possible. For example, a plurality of semiconductor laser chips 1 are circumferentially arranged along the outer side of the optical fiber cladding 21, or a plurality of semiconductor laser chips 1 are axially arranged along the outer side of the optical fiber cladding 21, or a plurality of semiconductor laser chips 1 are circumferentially arranged and axially arranged along the outer side of the optical fiber cladding 21, or a plurality of semiconductor laser chips 1 are circumferentially and axially staggered along the outer side of the optical fiber cladding 21.
Meanwhile, the invention also provides a beam combination method of the semiconductor laser chip, which comprises the following steps:
firstly, manufacturing a diffraction structure 5 on the surface of an optical fiber cladding 21, and manufacturing a total reflection film 4 at one end of an optical fiber 2;
secondly, arranging a plurality of semiconductor laser chips 1 outside an optical fiber cladding 21;
and step three, the light emitted by the semiconductor laser chip 1 enters the fiber core 22 through the fiber cladding 21 fully distributed on the diffraction structure 5, and is finally output from the other end of the fiber 2, so that laser beam combination is realized.
Example one
The surface of the optical fiber cladding 21 is processed, so that the optical fiber cladding 21 is fully distributed with the diffraction structure 5, meanwhile, the total reflection film 4 is manufactured at one end of the optical fiber 2, a plurality of semiconductor laser bars with the same wavelength are distributed in the radial direction of the optical fiber 2, current is conducted on the semiconductor laser bars, light emitted by the semiconductor laser bars enters the core diameter of the optical fiber 2 through the optical fiber cladding 21 fully distributed with the diffraction structure 5, finally, the laser 6 after beam combination is output from one end of the optical fiber 2, and beam combination laser with high power and high beam quality ratio is achieved.
Example two
The surface of the optical fiber cladding 21 is processed, so that the optical fiber cladding 21 is fully distributed with the diffraction structure 5, meanwhile, the total reflection film 4 is manufactured at one end of the optical fiber 2, a plurality of semiconductor laser unit tubes with different wave bands are distributed in the axial direction of the optical fiber 2, current is supplied to the semiconductor laser unit tubes, light emitted by the semiconductor laser unit tubes enters the core diameter of the optical fiber 2 through the optical fiber cladding 21 fully distributed with the diffraction structure 5, finally, the laser 6 after beam combination is output from one end of the optical fiber 2, and beam combination laser with multiple wavelengths, high power and high beam quality ratio is realized.
According to the method and the device, the diffraction structure 5 is manufactured on the surface of the optical fiber cladding 21, so that the output laser of the distributed semiconductor laser chip 1 enters the core diameter of the optical fiber 2 after being diffracted by the optical fiber cladding 21, is output from one end face of the optical fiber 2, and is collimated to obtain high power light beam quality.
In the method and the device, the semiconductor laser chips 1 are distributed along the optical fiber cladding 21, so that the heat accumulation effect is solved, and the heat management cost is reduced; meanwhile, the number of the beam combination semiconductor laser chips 1 can be greatly increased, and higher-power and higher-quality output is realized; in addition, multi-wavelength beam combination can be performed, and requirements of different fields are met.
Claims (10)
1. A beam combination method of a semiconductor laser chip is characterized by comprising the following steps:
firstly, manufacturing a diffraction structure (5) on the surface of an optical fiber cladding (21), and manufacturing a total reflection film (4) at one end of an optical fiber (2);
secondly, arranging a plurality of semiconductor laser chips (1) outside an optical fiber cladding (21);
and step three, light emitted by the semiconductor laser chip (1) enters the optical fiber core (22) through the optical fiber cladding (21) fully distributed on the diffraction structure (5), and is finally output from the other end of the optical fiber (2), so that laser beam combination is realized.
2. The method of combining beams of a semiconductor laser chip according to claim 1, wherein: in the second step, a plurality of semiconductor laser chips (1) are fixed on the outer side of the optical fiber cladding (21) through the arc-shaped packaging heat sink (3), and the inner surface of the arc-shaped packaging heat sink (3) is polished, so that light leaked from the optical fiber cladding (21) is reflected to the optical fiber core (22).
3. The method of combining beams of a semiconductor laser chip according to claim 2, wherein: in the second step, the semiconductor laser chip (1) is a semiconductor laser bar or a semiconductor laser single tube; the diffraction structure (5) is a diffraction grating.
4. A method of combining beams of a semiconductor laser chip according to claim 1, 2 or 3, characterized in that: in the second step, the wavelengths of the semiconductor laser chips (1) are the same or different.
5. The method of combining semiconductor laser chips of claim 4, wherein: in the second step, a plurality of semiconductor laser chips (1) are arranged along the outer circumferential direction of the optical fiber cladding (21), or a plurality of semiconductor laser chips (1) are arranged along the outer axial direction of the optical fiber cladding (21), or a plurality of semiconductor laser chips (1) are arranged along the outer circumferential direction of the optical fiber cladding (21) and are arranged axially.
6. A beam combining device of a semiconductor laser chip is characterized in that: comprises an optical fiber (2) and a plurality of semiconductor laser chips (1);
the surface of the optical fiber cladding (21) is provided with a diffraction structure (5), and one end of the optical fiber (2) is provided with a total reflection film (4); the semiconductor laser chips (1) are arranged on the outer side of the optical fiber cladding (21), and light emitted by the semiconductor laser chips (1) enters the optical fiber core (22) through the optical fiber cladding (21) which is fully distributed on the diffraction structure (5) and is finally output from the other end of the optical fiber (2), so that laser beam combination is realized.
7. The beam combining device of a semiconductor laser chip as claimed in claim 6, wherein: the semiconductor laser chips (1) are fixed on the outer side of the optical fiber cladding (21) through an arc-shaped packaging heat sink (3), and the inner surface of the arc-shaped packaging heat sink (3) is polished so as to reflect light leaked from the optical fiber cladding (21) back to the optical fiber core (22).
8. The beam combining device of a semiconductor laser chip as claimed in claim 7, wherein: the semiconductor laser chip (1) is a semiconductor laser bar or a semiconductor laser single tube; the diffraction structure (5) is a diffraction grating.
9. The beam combining device of a semiconductor laser chip according to claim 6, 7 or 8, characterized in that: the semiconductor laser chips (1) have the same wavelength or different wavelengths.
10. The beam combining device of a semiconductor laser chip as claimed in claim 9, wherein: the semiconductor laser chips (1) are circumferentially arranged along the outer side of the optical fiber cladding (21), or the semiconductor laser chips (1) are axially arranged along the outer side of the optical fiber cladding (21), or the semiconductor laser chips (1) are circumferentially arranged and axially arranged along the outer side of the optical fiber cladding (21).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011032905.9A CN112164975B (en) | 2020-09-27 | 2020-09-27 | Beam combining method and beam combining device for semiconductor laser chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011032905.9A CN112164975B (en) | 2020-09-27 | 2020-09-27 | Beam combining method and beam combining device for semiconductor laser chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112164975A CN112164975A (en) | 2021-01-01 |
| CN112164975B true CN112164975B (en) | 2021-08-17 |
Family
ID=73863045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011032905.9A Active CN112164975B (en) | 2020-09-27 | 2020-09-27 | Beam combining method and beam combining device for semiconductor laser chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112164975B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111929778A (en) * | 2020-07-20 | 2020-11-13 | 西安立芯光电科技有限公司 | Semiconductor laser beam combination technology |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2292974A1 (en) * | 1998-12-22 | 2000-06-22 | The Board Of Trustees Of The Leland Stanford Junior University | Tunable, mechanically induced long-period fiber grating with enhanced polarizing characteristics |
| CN101281274A (en) * | 2008-05-13 | 2008-10-08 | 北京理工大学 | Optical fiber cladding grating |
| CN102931585A (en) * | 2012-10-31 | 2013-02-13 | 中国科学院长春光学精密机械与物理研究所 | External-cavity-beam-combination semiconductor laser fiber coupling module |
| CN105428996A (en) * | 2015-12-09 | 2016-03-23 | 中国科学院长春光学精密机械与物理研究所 | Multi-grating structure-based semiconductor laser beam combination device and beam combination method |
| CN111146682A (en) * | 2019-12-04 | 2020-05-12 | 中电科天之星激光技术（上海）有限公司 | Optical fiber coupling semiconductor laser module and semiconductor laser |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004179607A (en) * | 2002-09-30 | 2004-06-24 | Fuji Photo Film Co Ltd | Laser device |
| CN103944066B (en) * | 2014-05-09 | 2018-03-16 | 西安炬光科技有限公司 | A kind of high-power semiconductor laser closes Shu Fangfa |
| CN111404019A (en) * | 2020-03-30 | 2020-07-10 | 深圳活力激光技术有限公司 | Optical fiber coupling structure and method of high-power semiconductor laser |
-
2020
- 2020-09-27 CN CN202011032905.9A patent/CN112164975B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2292974A1 (en) * | 1998-12-22 | 2000-06-22 | The Board Of Trustees Of The Leland Stanford Junior University | Tunable, mechanically induced long-period fiber grating with enhanced polarizing characteristics |
| CN101281274A (en) * | 2008-05-13 | 2008-10-08 | 北京理工大学 | Optical fiber cladding grating |
| CN102931585A (en) * | 2012-10-31 | 2013-02-13 | 中国科学院长春光学精密机械与物理研究所 | External-cavity-beam-combination semiconductor laser fiber coupling module |
| CN105428996A (en) * | 2015-12-09 | 2016-03-23 | 中国科学院长春光学精密机械与物理研究所 | Multi-grating structure-based semiconductor laser beam combination device and beam combination method |
| CN111146682A (en) * | 2019-12-04 | 2020-05-12 | 中电科天之星激光技术（上海）有限公司 | Optical fiber coupling semiconductor laser module and semiconductor laser |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112164975A (en) | 2021-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| RU2407121C2 (en) | Tubular solid-state laser | |
| US9596034B2 (en) | High brightness dense wavelength multiplexing laser | |
| US8767790B2 (en) | System and method for generating intense laser light from laser diode arrays | |
| CN108432067B (en) | Wavelength beam combining laser system with prism for beam quality improvement and bandwidth reduction | |
| CN102931585A (en) | External-cavity-beam-combination semiconductor laser fiber coupling module | |
| JPWO2002082163A1 (en) | Semiconductor laser device and solid-state laser device using the same | |
| US20040076197A1 (en) | Fibre laser | |
| KR101905102B1 (en) | Fiber coupled laser diode module based on single emitter beam combining and multi-stage structure | |
| CN112164975B (en) | Beam combining method and beam combining device for semiconductor laser chip | |
| US20100260210A1 (en) | Ops-laser pumped fiber-laser | |
| CN102820607B (en) | Signal and pumping laser hybrid integrated device | |
| CN101242075B (en) | Optical structure and its application | |
| CN112531462B (en) | Bragg grating external cavity semiconductor laser module beam combining device | |
| CN114243451B (en) | Semiconductor pump source and fiber laser | |
| JPH07301764A (en) | Laser device | |
| US7003011B2 (en) | Thin disk laser with large numerical aperture pumping | |
| CN216355284U (en) | Wavelength beam combiner, multi-wavelength pump source component and fiber laser | |
| US5781580A (en) | Diode pumping module | |
| US4637685A (en) | High power, broad area, monochromatic light source | |
| CN115327788B (en) | Spectrum beam combining device and method | |
| US20230178966A1 (en) | Laser module with beam rotator | |
| CN219268132U (en) | Semiconductor laser | |
| KR102215365B1 (en) | High-power laser diode module | |
| CN112670830B (en) | Partial coherent beam combination system of semiconductor laser | |
| CN1259758C (en) | Dual wavelength combination pumping method for disk type laser gain medium and its gain module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |