CN112162444B - Terahertz absorption switch from double frequency bands to broadband based on phase change principle - Google Patents
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- 238000010521 absorption reaction Methods 0.000 title claims abstract description 53
- 230000008859 change Effects 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 37
- 239000012782 phase change material Substances 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 7
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 claims description 6
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 4
- 239000002086 nanomaterial Substances 0.000 claims description 4
- 229920000620 organic polymer Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000002861 polymer material Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 abstract 1
- 239000006096 absorbing agent Substances 0.000 description 7
- 230000006872 improvement Effects 0.000 description 7
- 238000011160 research Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 239000011358 absorbing material Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/17—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on variable-absorption elements not provided for in groups G02F1/015 - G02F1/169
- G02F1/174—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on variable-absorption elements not provided for in groups G02F1/015 - G02F1/169 based on absorption band-shift, e.g. Stark - or Franz-Keldysh effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
Abstract
The invention provides a dual-band to broadband terahertz absorption switch based on a phase change principle, which relates to the technical field of electromagnetic functional absorption materials of terahertz frequency bands. Compared with the prior art, the invention is applicable to a wider working spectrum modulation range: the absorption switch device based on the phase change principle can realize the terahertz absorption switch function from double frequency bands to wide frequency bands, and can apply temperature sensing; high efficiency absorption effect: widely applied to energy absorption; lower manufacturing cost: the device has small volume, simple structure and easy preparation.
Description
Technical field:
the invention relates to the technical field of electromagnetic function absorbing materials in terahertz frequency bands, in particular to a terahertz absorption switch capable of realizing the function from double frequency bands to wide frequency bands in a temperature control mode by controlling the on-off control of the absorbing materials on the absorption characteristics of different frequency bands, and particularly relates to a terahertz absorption switch from double frequency bands to wide frequency bands based on a phase change principle.
The background technology is as follows:
terahertz (THz) waves generally refer to electromagnetic waves having frequencies in the range of 0.1-10THz, with a band between millimeter waves and infrared waves. Terahertz waves have many excellent characteristics and have important research values and application prospects in the fields of safety detection, medical imaging, communication technology and the like. However, because the interaction between most conventional natural materials and terahertz waves is weak, the terahertz devices and materials lack due to the fact that the conventional natural materials and the terahertz waves do not have obvious electromagnetic response, and research and utilization of the terahertz waves by people are greatly limited. However, the research on terahertz waves is not restrained by scientific researchers, and materials and devices for terahertz wave control are always the core content of the research in the terahertz field.
The advent of meta-materials (meta-materials) has just provided an effective way to solve this problem-the lack of meta-materials in the terahertz band is an artificial composite medium and composite material with extraordinary physical properties that natural materials do not possess, whose electromagnetic properties depend primarily on the geometry of the basic unit, whose dimensions are much smaller than the wavelength of the incident electromagnetic wave. In recent years, research on a metamaterial absorber attracts more and more attention, and the metamaterial absorber is widely applied to the directions of energy collection, imaging, sensing and the like. In 2008, landy et al first proposed a microwave band single-band metamaterial absorber based on the idea of impedance matching, and then a strategy of absorbing structure design gradually evolved into a typical sandwich structure (a metal mirror layer, a dielectric layer, a metal micro-nano structure layer), and such structure design can achieve an absorption efficiency close to 100%. However, due to the strong resonant dispersion characteristics, the metamaterial absorber is mostly narrowband and single-frequency-point, which greatly limits the application of the metamaterial absorber. In order to expand the absorption bandwidth of metamaterials, multiband and broadband absorbers based on multiple resonance response, lumped elements, mie scattering and graphene materials are widely studied.
Currently, there are many reports of metamaterial-based tunable absorber devices (F.R.Ling, opt.Express 2016, 241518-1527). Up to now, the reported tunable modulation is concentrated on the modulation of the working frequency, very few broadband modulation is realized at the expense of the absorption efficiency, and the realization of the modulation of the broadband on the premise of ensuring the high absorption efficiency is still a hot problem of the research of the tunable absorption characteristics, however, the terahertz frequency band high-efficiency dual-band to broadband absorption switching device is not yet found in the related literature and patent of the metamaterial-based tunable absorption device. This patent will put forward a two frequency bands to terahertz absorption switch of broadband based on phase transition principle, utilizes the mode of control by temperature change to realize the bandwidth modulation of absorption characteristic, and the modulation degree of depth of this absorbing device is great, has efficient absorption characteristic.
The invention comprises the following steps:
the invention aims to provide a terahertz absorption switch from double frequency bands to wide frequency bands based on a phase change principle. The phase change material is integrated into the design of the metamaterial absorption device, and bandwidth modulation of absorption characteristics is realized by utilizing multiple resonance response and asymmetry of the positions of the phase change material.
The invention relates to a terahertz absorption switch from double frequency bands to broadband based on a phase change principle, which comprises a continuous metal reflector layer, a dielectric layer and an artificial electromagnetic material structure layer, wherein the dielectric layer is positioned between the metal reflector layer and the artificial electromagnetic material structure layer, the artificial electromagnetic material layer is formed by periodically arranged basic units of metal/phase change material micro-nano structures, the basic units are formed by split ring resonators I and split ring resonators II, the split ring resonators I and the split ring resonators II are coupled metal split ring resonators, the split ring resonators I and the split ring resonators II are mutually separated and mutually orthogonal, and phase change material blocks I and phase change material blocks II are respectively arranged on the split ring resonators I and the split ring resonators II; the split ring resonator I and the split ring resonator II are annular, the long sides are c, the short sides are b, a connecting bridge is arranged between the two long sides c and is positioned at the position of c/2, the connecting bridge divides the split ring resonator I and the split ring resonator II into two auxiliary rings respectively, two openings are respectively arranged on the split ring resonator I and the split ring resonator II, one opening is positioned at the center of one of the short sides, the short side is positioned in one of the auxiliary rings, and the other opening is positioned in the other auxiliary ring and is positioned on one long side; the phase change material block I and the phase change material block II are respectively positioned at the long-side opening of the split-ring resonator I and the short-side opening of the split-ring resonator II.
As a further improvement of the invention, the basic unit structure is 2*a in length and a in width; the linewidths of the split ring resonator I and the split ring resonator II are w, and the opening widths are s; the distance between the split ring resonator I and the split ring resonator II is d; the shapes of the phase-change material block I and the phase-change material block II are identical to the shapes of the openings of the split-ring resonators I and II.
As a further improvement of the invention, the metal reflector layer and the artificial electromagnetic material structure layer are both made of metal materials, and the thicknesses t of the metal reflector layer and the artificial electromagnetic material structure layer m Are all on the order of hundred nanometers.
As a further improvement of the present invention, the metal material is gold, silver, aluminum or copper.
As a further improvement of the invention, the dielectric layer material adopts an organic polymer material or silicon dioxide, and the thickness t of the dielectric layer material is in the micrometer level.
As a further improvement of the present invention, the organic polymer material is polyimide.
As a further improvement of the invention, the split ring resonator I, the split ring resonator II, the phase change material block I and the phase change material block II are all etched and coated on the surface of the dielectric layer.
As a further improvement of the invention, the phase-change material block I and the phase-change material block II are vanadium dioxide (VO 2 ) The thickness of the material is t m 。
Compared with the prior art, the invention has the advantages that:
1. wider operating spectral modulation range: the absorption switch device based on the phase change principle can realize the terahertz absorption switch function from double frequency bands to wide frequency bands, can apply temperature sensing, and is further applied to the technical fields of optical switches, optical modulators, intelligent temperature regulation and control systems, heat radiators and the like;
2. high efficiency absorption effect: widely applied to energy absorption;
3. lower manufacturing cost: the device has small volume, simple structure and easy preparation.
Description of the drawings:
FIG. 1 is a schematic perspective view of the present invention;
FIG. 2 is a schematic diagram of the structure of an artificial electromagnetic material layer according to the present invention;
FIG. 3 is a view of vanadium dioxide (VO 2 ) Simulation results of absorption characteristics before and after phase transition.
In the figure: dielectric layer 1, metal reflector layer 2, artificial electromagnetic material structural layer 3, split ring resonator I4, split ring resonator II 5, phase change material piece I6, phase change material piece II 7.
The specific embodiment is as follows:
example 1
The terahertz absorption switch from double frequency bands to broadband based on the phase change principle comprises a continuous metal reflector layer 2, a dielectric layer 1 and an artificial electromagnetic material structure layer 3, wherein the dielectric layer 1 is made of polyimide, and the thickness t=22 mu m is in the micrometer level. The metal reflector layer 2 and the artificial electromagnetic material structure layer 3 are both made of aluminum, and the thicknesses t of the metal reflector layer 2 and the artificial electromagnetic material structure layer 3 are equal to each other m =200 nm; the dielectric layer 1 is positioned between the metal reflector layer 2 and the artificial electromagnetic material structure layer 3, the artificial electromagnetic material layer 3 is formed by periodically arranged basic units of metal/phase change material micro-nano structures, the basic units are formed by split ring resonators I4 and II 5, the split ring resonators I4 and II 5 are coupled metal split ring resonators, the physical shapes of the split ring resonators I4 and II 5 are the same,split ring resonator i 4 and split ring resonator ii 5 are separated from and orthogonal to each other, split ring resonator i 4 is rotated 90 ° clockwise relative to split ring resonator ii 5, such a composite structure design is beneficial to the formation of multiple resonant responses, providing considerable flexibility for tunable control of absorption characteristics; the split ring resonator I4 and the split ring resonator II 5 are respectively provided with a phase-change material block I6 and a phase-change material block II 7, and the phase-change material block I6 and the phase-change material block II 7 are vanadium dioxide (VO 2 ) The thickness of the material is t m The method comprises the steps of carrying out a first treatment on the surface of the The split ring resonator I4, the split ring resonator II 5, the phase change material block I6 and the phase change material block II 7 are all etched and coated on the surface of the dielectric layer 1; the split ring resonator I4 and the split ring resonator II 5 are annular, the long sides are c, the short sides are b, a connecting bridge is arranged between the two long sides c and is positioned at the position of c/2, the connecting bridge divides the split ring resonator I4 and the split ring resonator II 5 into two auxiliary rings respectively, two openings are arranged on the split ring resonator I4 and the split ring resonator II 5, one opening is positioned in the center of one of the short sides and is positioned in one of the auxiliary rings, and the other opening is positioned in the other auxiliary ring and is positioned on one long side of the other auxiliary ring; the phase change material block I6 and the phase change material block II 7 are respectively positioned at the long-side opening of the split-ring resonator I4 and the short-side opening of the split-ring resonator II 5.
The basic unit structure is 2*a =200 μm long and a=100 μm wide; the long sides c=70 μm, the short sides b=50 μm, the line width w=10 μm, and the opening width s=10 μm of the split ring resonators i 4 and ii 5; the distance between the mutually orthogonal coupling metal split ring resonators is d=20μm; the shapes of the phase-change material block I6 and the phase-change material block II 7 are identical to the shapes of the openings of the split-ring resonators I4 and II 5.
Example 2
In comparison with example 1, the only differences are: the dielectric layer 1 is made of silicon dioxide, the metal reflector layer 2 and the artificial electromagnetic material structure layer 3 are both made of copper,
example 3
In comparison with example 1, the only differences are: polyimide is adopted as the material of the dielectric layer 1, and the metal reflector layer 2 and the artificial electromagnetic material structural layer 3 are both silver.
Example 4
In comparison with example 1, the only differences are: the dielectric layer 1 is made of silicon dioxide, and the metal reflector layer 2 and the artificial electromagnetic material structure layer 3 are both made of gold.
Performance detection of terahertz absorption switch from double frequency bands to broadband based on phase change principle
The performance of the terahertz absorption device can be measured by the absorption rate, and is defined as
A＝1-R-T
Wherein a represents absorption, R represents reflectance, and T represents transmittance. Since the thickness of the metal mirror layer is greater than the skin depth of terahertz, the transmittance is almost zero.
Based on the structural parameters of example 1, the absorption spectrum of the terahertz wave absorption device can be obtained as shown in fig. 3, and at normal temperature, namely the phase change material vanadium dioxide (VO 2 ) In the semiconductor state, absorption peaks of the dual band at 0.674THz and 0.865THz, respectively, of 99.6% and 98.8% were observed. When the temperature of the device is controlled above 68 ℃ (330K) of the phase transition temperature, vanadium dioxide (VO 2 ) The material is in a metallic state, and as can be seen from fig. 3, the absorption rates at the frequencies of 0.944THz and 1.097THz are 98.7% and 99.3%, respectively, and the minimum absorption rate at the absorption valley between them can also reach 95.4%, and if the minimum value of the absorption intensity is set to 95%, the broadband absorption characteristic with the bandwidth of 220GHz can be obtained when the high temperature is acted. Therefore, by controlling the temperature, the switching action from the dual-band absorption to the broadband absorption can be realized, and the average tunability of the resonance frequency can reach 33.3 percent.
Those of ordinary skill in the art will recognize that the embodiments described herein are for the purpose of aiding the reader in understanding the principles of the present invention and should be understood as not limiting the scope of the invention to such specific statements and embodiments. All possible equivalents or modifications from the above description are considered to be within the scope of the claims.
Claims (8)
1. The dual-band to broadband terahertz absorption switch based on the phase change principle comprises a continuous metal reflector layer (2), a dielectric layer (1) and an artificial electromagnetic material structure layer (3), wherein the dielectric layer (1) is positioned between the metal reflector layer (2) and the artificial electromagnetic material structure layer (3), and is characterized in that the artificial electromagnetic material structure layer (3) is formed by basic units of periodically arranged metal material micro-nano structures, the basic units are formed by split ring resonators I (4) and II (5), the split ring resonators I (4) and II (5) are all coupled metal split ring resonators, the split ring resonators I (4) and II (5) are mutually separated and mutually orthogonal, and phase change material blocks I (6) and II (7) are respectively arranged on the split ring resonators I (4) and II (5); the split ring resonator I (4) and the split ring resonator II (5) are annular, the long sides are c, the short sides are b, a connecting bridge is arranged between the two long sides c and is positioned at c/2, the connecting bridge divides the split ring resonator I (4) and the split ring resonator II (5) into two auxiliary rings respectively, two openings are respectively arranged on the split ring resonator I (4) and the split ring resonator II (5), one opening is positioned at the center of one of the short sides, the short side is positioned in one of the auxiliary rings, and the other opening is positioned in the other auxiliary ring and is positioned on one long side of the other auxiliary ring; the phase change material block I (6) and the phase change material block II (7) are respectively positioned at the long-side opening of the split-ring resonator I (4) and the short-side opening of the split-ring resonator II (5).
2. The dual-band to broadband terahertz absorption switch based on the phase change principle as in claim 1, wherein the basic unit structure is 2*a long and a wide; the line widths of the split ring resonator I (4) and the split ring resonator II (5) are w, and the opening widths are s; the distance between the split ring resonator I (4) and the split ring resonator II (5) is d; the shapes of the phase change material block I (6) and the phase change material block II (7) are identical to the shapes of the openings of the split-ring resonators I (4) and the split-ring resonators II (5).
3. The dual-band to broadband terahertz absorption switch based on the phase-change principle as set forth in claim 1, wherein the metal mirror layer (2) and the artificial electromagnetic material structure layer (3) are both made of metal material, and the thicknesses t of the metal mirror layer (2) and the artificial electromagnetic material structure layer (3) m Are all on the order of hundred nanometers.
4. The dual-band to broadband terahertz absorption switch based on the phase change principle of claim 3, wherein the metal material is gold, silver, aluminum or copper.
5. The dual-band to broadband terahertz absorption switch based on the phase change principle as set forth in claim 1, wherein the dielectric layer (1) is made of an organic polymer material or silicon dioxide, and the thickness t of the dielectric layer is in the order of micrometers.
6. The dual-band to broadband terahertz absorption switch based on the phase change principle of claim 5, wherein the organic polymer material is polyimide.
7. The dual-band to broadband terahertz absorption switch based on the phase-change principle as set forth in claim 1, wherein the split-ring resonator i (4), the split-ring resonator ii (5), the phase-change material block i (6) and the phase-change material block ii (7) are etched to cover the surface of the dielectric layer (1).
8. The dual-band to broadband terahertz absorption switch based on the phase-change principle as in claim 1, wherein the phase-change material block i (6) and the phase-change material block ii (7) are both vanadium dioxide (VO 2 ) The thickness of the material is t m 。
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| CN113437526B (en) * | 2021-06-19 | 2022-07-12 | 西北工业大学 | Graphene/metal composite super-surface-based dual-band electromagnetic wave transmission modulation method and device |
| CN115145056B (en) * | 2022-08-10 | 2023-05-09 | 重庆邮电大学 | Terahertz modulator based on T-shaped and E-shaped super-surface resonance structures |
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| CN105811120A (en) * | 2016-04-29 | 2016-07-27 | 上海交通大学 | Continuously adjustable degradable terahertz meta-material based on optical driving and preparation method thereof |
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| WO2008121159A2 (en) * | 2006-10-19 | 2008-10-09 | Los Alamos National Security Llc | Active terahertz metamaterial devices |
| CN105811120A (en) * | 2016-04-29 | 2016-07-27 | 上海交通大学 | Continuously adjustable degradable terahertz meta-material based on optical driving and preparation method thereof |
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