CN112159971B

CN112159971B - Semiconductor cavity

Info

Publication number: CN112159971B
Application number: CN202011027047.9A
Authority: CN
Inventors: 王洪彪; 王勇飞; 陈显望; 兰云峰
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2020-09-25
Filing date: 2020-09-25
Publication date: 2022-01-11
Anticipated expiration: 2040-09-25
Also published as: CN112159971A

Abstract

The embodiment of the application provides a semiconductor cavity, including the cavity, set up base, exhaust subassembly and a plurality of adjustable piece in the cavity, exhaust subassembly encircles the base sets up and has and encircles a plurality of gas vents that the base set up, it is a plurality of adjustable piece and a plurality of the gas vent one-to-one sets up, every the adjustable piece all can through adjust with the gas flow is adjusted to the radial area of the gas passage that the gas vent corresponds, the cavity has the extraction opening, the gas vent passes through the adjustable piece with the extraction opening intercommunication. The semiconductor cavity that this application embodiment provided can the distribution of atmospheric pressure in the balanced cavity for can form comparatively even air current field in the cavity.

Description

Semiconductor cavity

Technical Field

The invention relates to the technical field of semiconductors, in particular to a semiconductor chamber.

Background

In the vapor deposition reaction process, the uniformity of the gas in the semiconductor chamber is a factor which greatly affects the yield of the final product, and due to structural limitation, the pumping hole in the semiconductor chamber in the prior art is often arranged in an offset manner, so that the gas can flow to the side more and the uniformity of the gas is affected due to the lower pressure close to the pumping hole.

Disclosure of Invention

Embodiments of the present application provide a semiconductor chamber to solve the above problems.

The embodiment of the application adopts the following technical scheme:

the embodiment of the application provides a semiconductor cavity, including the cavity, set up base, exhaust subassembly and a plurality of adjustable piece in the cavity, exhaust subassembly encircles the base sets up and has and encircles a plurality of gas vents that the base set up, it is a plurality of adjustable piece and a plurality of the gas vent one-to-one sets up, every the adjustable piece all can through adjust with the gas flow is adjusted to the radial area of the gas passage that the gas vent corresponds, the cavity has the extraction opening, the gas vent passes through the adjustable piece with the extraction opening intercommunication.

Optionally, in the above semiconductor chamber, the exhaust assembly includes a fixing member and a baffle plate having the plurality of exhaust ports, wherein the fixing member is disposed around the base and fixed on the bottom wall of the cavity, the baffle plate is located above the fixing member and separates a main cavity and an exhaust ring cavity independent of the main cavity together with the fixing member in the cavity, the exhaust port is communicated with the exhaust ring cavity, the main cavity is communicated with the exhaust ring cavity through the exhaust port, and the adjustable member is disposed in the exhaust ring cavity.

Optionally, in foretell semiconductor cavity, the exhaust subassembly still includes the flow straightener, the flow straightener encircles the base and sets up the top of mounting, the main cavity quilt flow straightener separates for being located the reaction chamber at middle part and being located the flow straightener ring chamber of exhaust ring chamber top, on the flow straightener around the base is provided with a plurality of exhaust ducts, the reaction chamber with the flow straightener ring chamber passes through the exhaust duct intercommunication, the flow straightener ring chamber pass through the gas vent with the exhaust ring chamber intercommunication.

Optionally, in the semiconductor chamber, a fixing ring step is formed by extending a side of the fixing member away from the reaction chamber, and the baffle abuts against an upper surface of the fixing ring step.

Optionally, in the semiconductor chamber, each of the tunable members has at least two air inlet channels communicated with each other, the size of the exhaust port is larger than that of any one of the air inlet channels of the tunable member corresponding to the exhaust port, the sizes of at least two of the air inlet channels communicated with each other on the tunable member are different, any one of the air inlet channels can be connected with the exhaust port, and the rest of the air inlet channels are communicated with the exhaust ring cavity.

Optionally, in the semiconductor chamber, the adjustable member has a plurality of side surfaces, each of the side surfaces has at most one inlet, and when the inlet channel is aligned with the outlet, the side surface where the corresponding inlet is located is attached to the baffle.

Optionally, in the semiconductor chamber, the exhaust assembly further includes an adjustable fixing seat, the adjustable fixing seat is disposed in the exhaust ring cavity, and the adjustable component is clamped and fixed in the exhaust ring cavity through the adjustable fixing seat and the baffle plate.

Optionally, in the semiconductor chamber, an outer contour of the adjustable element is a prism, the side surface is a prism surface of the adjustable element, a fixing groove is respectively formed on the adjustable element fixing seat corresponding to each adjustable element, and the adjustable element is fixed to the adjustable element fixing seat through the matching between the prism surface and the fixing groove.

Optionally, in the semiconductor chamber, the upper end of the fixing member has a first positioning protrusion, and the lower end of the flow equalizing member has a first positioning groove corresponding to the first positioning protrusion.

Optionally, in the semiconductor chamber, the upper end of the fixing member has a second positioning protrusion, and the baffle has a second positioning groove corresponding to the second positioning protrusion.

Optionally, an embodiment of the present application further provides a semiconductor device, which includes the semiconductor chamber described above.

The embodiment of the application provides a semiconductor cavity and semiconductor device, through set up the gas vent on exhaust subassembly to communicate the gas vent through adjustable piece and extraction opening, the adjustable piece can be through adjusting the radial area with the gas channel that the gas vent corresponds and adjusting the gas flow, and the atmospheric pressure distribution in the cavity can be balanced, makes and to form comparatively even air current field in the cavity.

Drawings

The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:

FIG. 1 is a cross-sectional view of an overall structure of a semiconductor chamber provided in an embodiment of the present disclosure;

FIG. 2 is an enlarged view of a portion of area A of FIG. 1;

FIG. 3 is an exploded view of a venting assembly and an adjustable member of a semiconductor chamber according to an embodiment of the present disclosure;

FIG. 4 is a schematic view of a fitting structure of a fixing member, a fixing ring step and an adjustable member fixing seat according to an embodiment of the present disclosure;

FIG. 5 is a perspective view of an adjustable element according to an embodiment of the present disclosure;

FIG. 6 is a cross-sectional view of an adjustable member provided in accordance with an embodiment of the present application.

Reference numerals:

1-a base,

2-an exhaust component, 20-a baffle, 200-an exhaust port, 202-a second positioning groove, 21-a fixing piece, 210-a first positioning bulge, 212-a second positioning bulge, 22-an exhaust ring cavity, 23-a flow equalizing piece, 230-an exhaust duct, 232-a first positioning groove, 24-a reaction cavity, 25-a flow equalizing ring cavity, 26-a fixing ring step, 260-a gas outlet, 27-an adjustable piece fixing seat,

3-adjustable part, 30-air inlet channel, 300-air inlet,

4-air inlet structure, 5-support column and 6-shell.

Detailed Description

In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail and completely with reference to the following specific embodiments of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

Embodiments of the present disclosure provide a semiconductor chamber, as shown in fig. 1, the semiconductor chamber provided in the embodiments of the present disclosure is preferably used for an atomic deposition process, and may also be used for other gas phase reaction processes such as ion etching.

As shown in fig. 1, the semiconductor chamber provided in the embodiment of the present invention includes a chamber (not numbered) enclosed by a housing 6, and further includes a susceptor 1, an exhaust assembly 2 and a plurality of adjustable members 3 disposed in the chamber, wherein the susceptor 1 is used for carrying a substrate and is supported in the middle of the chamber by a support column 5 extending into the chamber from the bottom of the chamber. Reaction gas enters the cavity through the gas inlet structure 4 arranged at the top of the cavity and reacts, the gas inlet structure 4 can be a plurality of gas nozzles arranged in an array mode, and the gas inlet structure can also be a shower nozzle structure and the like, and the reaction gas can be introduced into the cavity from the outside and participate in the reaction.

As shown in fig. 3, the exhaust assembly 2 is disposed around the base 1 and has a plurality of exhaust ports 200 disposed around the base 1, a plurality of adjustable members 3 are disposed in one-to-one correspondence with the plurality of exhaust ports 200, and each of the adjustable members 3 is capable of adjusting the flow rate of gas by adjusting the radial area of a gas passage corresponding to the exhaust port 200. Meanwhile, the chamber further has a pumping hole (not shown), and the exhaust port 200 is communicated with the pumping hole through the adjustable member 3.

In the atomic deposition process, due to the limitation of hardware such as the semiconductor chamber structure and the heating base, the pumping hole is usually eccentrically disposed, which may cause the exhaust pressure around the base 1 to be inconsistent and the exhaust gas flow field to be uneven, thereby affecting the thickness and uniformity of the deposited film.

The adjustable element 3 of the embodiment of the present application can adjust the gas flow rate by adjusting the radial area of the gas channel corresponding to the gas outlet 200, so as to adjust the pressure at the gas outlet 200. By the mode, the pressure of all the exhaust ports 200 which surround the base 1 in a circle can be controlled, the air pressure distribution in the cavity can be balanced, and a uniform airflow field can be formed in the cavity.

As shown in fig. 2 and 3, the exhaust assembly may include a baffle 20 having a plurality of exhaust ports 200 and a fixing member 21, wherein the fixing member 21 is disposed around the base 1 and fixed on the bottom wall of the chamber, the baffle 20 is located above the fixing member 21 and separates a main chamber (not numbered in the figure) and an exhaust ring chamber 22 independent of the main chamber together with the fixing member 21, the exhaust ports are communicated with the exhaust ring chamber 22, the main chamber is communicated with the exhaust ring chamber 22 through the exhaust ports 200, and the adjustable member 3 is disposed in the exhaust ring chamber 22.

The exhaust assembly 2 can further comprise a flow equalizing part 23, the flow equalizing part 23 surrounds the base 1 and is arranged above the fixing part 21, the main cavity is divided into a reaction cavity 24 positioned in the middle and a flow equalizing ring cavity 25 positioned above the exhaust ring cavity 22 by the flow equalizing part 23, a plurality of exhaust ducts 230 are arranged on the flow equalizing part 23 around the base 1, and the reaction cavity 24 is communicated with the flow equalizing ring cavity 25 through the exhaust ducts 230. The exhaust ducts 230 may be uniformly arranged along the circumferential direction of the flow equalizing member 23 as shown in fig. 2, or may be combined and ordered according to specific needs, and of course, the uniform arrangement is more favorable for forming a more uniform airflow field in the cavity. The flow equalizing ring 25 is used for communicating the exhaust ducts 230 with each other on the exhaust side by means of a communicated annular chamber structure, so as to preliminarily balance the exhaust pressure at the exhaust ducts 230.

As shown in fig. 3 and 4, in this embodiment, in order to increase the installation stability of the baffle 20, a fixing annular step 26 may be formed by extending a side of the fixing member 21 away from the reaction chamber 24, and the upper surfaces of the baffle 20 and the fixing annular step 26 are also abutted against each other, so that the inner side and the outer side of the baffle 20 are simultaneously supported, thereby improving the installation stability.

As shown in fig. 5 and 6, each adjustable member 3 in the present embodiment has at least two air inlet channels 30 communicated with each other, the adjustable member 3 may be a multi-prism porous structure as shown in fig. 4, or may be an electromagnetic valve or other structures capable of changing the radial area of the air inlet channel 30, when the adjustable member is in the form of an electromagnetic valve, the conventional exhaust port and the conventional air outlet of the electromagnetic valve are both regarded as the air inlet channel 30, and because the installation form and the air inlet direction are different, the conventional exhaust port and the conventional air outlet of the electromagnetic valve may be switched to each other. The adjustable member 3 shown in fig. 4 and 5 is provided with 6 mutually communicated air inlet channels 30, the corresponding adjustable member 3 is provided with a hexagonal prism shape, each air inlet channel 30 is connected with one side surface of the hexagonal prism, namely the prism surface of the prism, each prism surface is provided with an air inlet 300 formed by extending only one air inlet channel 30, when the air inlet channels 30 are aligned with the air outlet 200, the side surface of the corresponding air inlet 300 is abutted with the baffle plate 20, and air passing through the air outlet 200 can only enter the corresponding air inlet channel 30 through the air inlet 300.

The adjustable member 3 may be provided as a regular prism as shown in fig. 4, or may be provided as a prism shape in which the respective prism faces are not equal, or the like. All inlet channels 30 in the adjustable element 3 may be arranged to communicate with each other as shown in fig. 5, so that when one of the inlet channels 30 communicates with the flow-equalizing ring cavity 25, the remaining inlet channels 30 may serve as outlet channels.

When the adjustable part 3 is used, one of the air inlet channels 30 is communicated with the flow equalizing ring cavity 25, the other air inlet channels 30 are communicated with the exhaust ring cavity 22, and one side of the fixed ring step 26 is provided with a gas outlet 260 corresponding to the pumping hole. As shown above, when the adjustable component 3 is configured as an electronic valve capable of controlling the radial area of the air inlet channel 30 through a ball valve structure or an electronic valve structure, the air inlet channel 30 connected to the flow equalizing ring cavity 25 is fixed, the pressure distribution in the flow equalizing ring cavity 25 is adjusted by changing the size of the fixed air inlet channel 30, and the adjustable component 3 may also be configured as a polygonal column structure as shown in fig. 3, 5 and 6, so that the pressure distribution in the flow equalizing ring cavity 25 is adjusted by connecting the air inlet channels 30 with different radial areas to the flow equalizing ring cavity 25, and whether the adjustable component 3 is configured as an electronic valve or as a polygonal column structure having a plurality of air inlet channels 30 with different radial areas as shown in fig. 4, the radial area of the air inlet channel 30 connected to the exhaust port 200 can be changed by the adjustable component 3 configured as a polygonal column structure in the present embodiment, compared with the structure of an electromagnetic valve and the like, the structure has lower cost and simple structure.

The embodiment of the application changes the radial area of the air inlet channel 30 connected with the pressure stabilizing ring cavity, thereby offsetting the uneven distribution of the air pressure in the exhaust ring cavity 22 caused by the reasons of the eccentrically-arranged air suction opening and the like, making the air pressure distribution in the flow equalizing ring cavity 25 communicated with the exhaust ring cavity 22 as even as possible, further enabling the cavity, particularly the reaction cavity 24, to generate a relatively even air flow field, changing the reaction gas in the reaction cavity 24, making each original adjustable part 3 lose the effect on the arrangement of the air inlet channel 30, debugging can be performed, readjusting the radial area of the air inlet channel 30 communicated with the flow equalizing ring cavity 25 by each adjustable part 3, and further achieving the technical effect of relatively even air flow field in the reaction cavity 24.

In order to cooperate with the baffle 20 to better fix the adjustable element 3, as shown in fig. 3 and 4, the exhaust assembly 2 in this embodiment may further include an adjustable element fixing seat 27, the adjustable element fixing seat 27 is disposed in the exhaust ring cavity 22, the adjustable element 3 is clamped in the exhaust ring cavity 22 through the adjustable element fixing seat 27 and the baffle 20 in a cooperating manner, when the adjustable element 3 is set to be in the above-mentioned prism shape, a fixing groove is disposed on the adjustable element fixing seat 27 corresponding to each adjustable element 3, as shown in fig. 4, the adjustable element 3 is set to be in a hexagonal prism shape, the fixing groove in fig. 3 is set to be in a shape capable of cooperating with three connected prismatic surfaces of the hexagonal prism, so as to fix the adjustable element 3 through the cooperating action of the prismatic surface and the fixing groove, and the fixing groove should be capable of cooperating with at least two connected prismatic surfaces, so as to effectively fix the adjustable element 3.

In order to facilitate the installation and alignment during the maintenance of the semiconductor chamber according to the embodiment of the present disclosure, as shown in fig. 3 and 4, in this embodiment, a first positioning protrusion 210 may be disposed at the upper end of the fixing member 21, and a first positioning groove 232 corresponding to the positioning protrusion is disposed at the lower end of the flow equalizing member 23. Similarly, a second positioning protrusion 212 may be further provided at the upper end of the fixing member 21, and a second positioning groove 202 corresponding to the second positioning protrusion 212 may be provided on the baffle 20. The first positioning protrusion 210 and the second positioning protrusion 212 are respectively disposed, or integrally disposed as shown in fig. 3 and fig. 4, to form a rib protruding from the upper end of the fixing member 21, and correspondingly, the first positioning groove 232 and the second positioning groove 202 may be disposed as two grooves corresponding to the rib, wherein the second positioning groove 202 selectively penetrates through the thickness direction of the baffle 20 or the thickness direction of the baffle 20 according to the thickness of the baffle 20, which is not described herein again.

To sum up, the semiconductor chamber that this application embodiment provided can be according to the comparatively convenient gas flow of adjustment every gas vent in the position of concrete reaction condition or extraction opening to atmospheric pressure distribution in can the balanced cavity, make and to form comparatively even air current field in the cavity.

In addition, the embodiment of the application also provides a semiconductor device, and the semiconductor device comprises the semiconductor chamber.

The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A semiconductor chamber comprises a chamber body, a base arranged in the chamber body, an exhaust assembly and a plurality of adjustable pieces, wherein the exhaust assembly is arranged around the base and is provided with a plurality of exhaust ports arranged around the base;

the plurality of adjustable pieces and the plurality of exhaust ports are arranged in a one-to-one correspondence manner, and each adjustable piece can adjust the gas flow by adjusting the radial area of a gas channel corresponding to the exhaust port so as to change the gas pressure at the corresponding exhaust port and enable the gas pressure distribution in the cavity to tend to be uniform;

the cavity is provided with an air pumping hole, and the air exhaust hole is communicated with the air pumping hole through the adjustable part.

2. The semiconductor chamber of claim 1, wherein the exhaust assembly comprises a fixed member and a baffle plate having the plurality of exhaust ports, wherein the fixed member is disposed around the pedestal and fixed to the bottom wall of the chamber body, the baffle plate is located above the fixed member and separates a main chamber and an exhaust ring chamber independent of the main chamber together with the fixed member, the exhaust port is in communication with the exhaust ring chamber, the main chamber is in communication with the exhaust ring chamber through the exhaust ports, and the adjustable member is disposed in the exhaust ring chamber.

3. The semiconductor chamber as claimed in claim 2, wherein the exhaust assembly further comprises a flow equalizing member surrounding the pedestal and disposed above the fixing member, the main chamber is divided by the flow equalizing member into a reaction chamber located in the middle and a flow equalizing ring chamber located above the exhaust ring chamber, a plurality of exhaust holes are disposed on the flow equalizing member around the pedestal, the reaction chamber and the flow equalizing ring chamber are communicated through the exhaust holes, and the flow equalizing ring chamber is communicated with the exhaust ring chamber through the exhaust port.

4. The semiconductor chamber of claim 3, wherein a retaining ring step extends from a side of the retaining member facing away from the reaction chamber, and the baffle abuts an upper surface of the retaining ring step.

5. The semiconductor chamber of any of claims 2 to 4, wherein each tunable member has at least two inlet passages in communication with each other, the exhaust port has a size larger than any one of the inlet passages on the tunable member corresponding thereto, at least two of the inlet passages in communication with each other on the tunable member have a different size, any one of the inlet passages is connectable to the exhaust port, and the remaining inlet passages are in communication with the exhaust ring cavity.

6. The semiconductor chamber of claim 5, wherein the tunable member has a plurality of sides, each of the sides having at most one inlet port, and wherein the corresponding side where the inlet port is located is adjacent to the baffle when the inlet channel is aligned with the outlet port.

7. The semiconductor chamber of claim 6, wherein the exhaust assembly further comprises an adjustable member mount disposed within the exhaust ring cavity, the adjustable member being clamped and secured within the exhaust ring cavity by the adjustable member mount and the baffle plate.

8. The semiconductor chamber according to claim 7, wherein the outer contour of the tunable element is a prism, the side surface is a prism surface of the tunable element, a fixing groove is respectively formed on the tunable element fixing base corresponding to each tunable element, and the tunable element is fixed to the tunable element fixing base by the prism surface and the fixing groove.

9. The semiconductor chamber of claim 3, wherein the fixing member has a first positioning protrusion at an upper end thereof, and the flow equalizing member has a first positioning groove at a lower end thereof corresponding to the first positioning protrusion.

10. The semiconductor chamber of claim 4, wherein the upper end of the fixing member has a second positioning protrusion, and the baffle has a second positioning groove corresponding to the second positioning protrusion.