CN112152490B - Power battery integrated charging power converter with bus harmonic absorption function and control method - Google Patents

Power battery integrated charging power converter with bus harmonic absorption function and control method Download PDF

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CN112152490B
CN112152490B CN202011008649.XA CN202011008649A CN112152490B CN 112152490 B CN112152490 B CN 112152490B CN 202011008649 A CN202011008649 A CN 202011008649A CN 112152490 B CN112152490 B CN 112152490B
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type igbt
igbt transistor
diode
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bus
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CN112152490A (en
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蔡骏
张仪
张菀
赵兴强
严颖
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Nanjing University of Information Science and Technology
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Nanjing University of Information Science and Technology
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M7/219Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/12Arrangements for reducing harmonics from ac input or output
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)

Abstract

The invention relates to a power battery integrated charging power converter with a bus harmonic absorption function, which adopts a brand new power topological structure, can reduce the volume of a system, improve the charging efficiency and prolong the service life of a battery, and simultaneously designs a corresponding control method, realizes a PFC function by utilizing the average current control of a bus and improves the operating efficiency of the system; the bus harmonic wave absorption circuit is utilized to keep the bus voltage stable, so that the harmonic wave influence is reduced, and the electric energy quality is improved; meanwhile, a voltage reduction type DC-DC circuit is utilized to provide more stable current for a load, the current is supplied to a battery for charging, the charging efficiency is improved, the integrated control of the power battery integrated charging power converter with the bus harmonic absorption function is correspondingly realized, power devices and driving resources can be reduced, the size is reduced, the cost is reduced, and the system operation efficiency is improved.

Description

Power battery integrated charging power converter with bus harmonic absorption function and control method
Technical Field
The invention relates to a power battery integrated charging power converter with a bus harmonic absorption function and a control method, and belongs to the technical field of power conversion.
Background
In a traditional power converter, a rectifier cascade DC-DC converter is adopted to charge a battery, but the DC bus voltage is affected by harmonic waves and can oscillate around a stable value, and particularly under the condition of single-phase rectification, the bus voltage fluctuation is more obvious. The instability of the bus voltage can reduce the electric energy quality, cause the instability of the charging current of the battery, and have adverse effects on the service life and the charging efficiency of the battery. The bus harmonic wave absorption circuit is adopted to control the bus voltage to be stable, and the bus harmonic wave absorption circuit plays an important role in improving the operation efficiency of the converter and ensuring the electric energy quality.
On the other hand, a plurality of converter circuits are directly cascaded, so that more switching devices are needed, unnecessary control resources are occupied, the system volume is increased, and the cost is not easy to control. Therefore, the functions of various converters are integrated, and meanwhile, the integration of the control method is realized, so that the miniaturization and integration development of a power converter system are facilitated, and the important effects on the cost control and the application field expansion are achieved.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a power battery integrated charging power converter with a bus harmonic absorption function, which can realize bus voltage stabilization, reduce harmonic influence, improve electric energy quality, provide more stable current for a load, supply the current to a battery for charging, reduce power devices and driving resources, and reduce volume and control cost.
The invention adopts the following technical scheme for solving the technical problems: the invention designs a power battery integrated charging power converter with bus harmonic absorption function, which comprises an alternating current power supply UsA first N-type IGBT transistor S1A first diode D1And a second N-type IGBT transistor S2A second diode D2And a third N-type IGBT transistor S3A third diode D3And a fourth N-type IGBT transistor S4A fourth diode D4And a fifth N-type IGBT transistor S5A fifth diode D5And the sixth N type IGBT transistor S6A sixth diode D6And seventh N type IGBT transistor S7The seventh diode D7A first thin film capacitor C1A second thin film capacitor C2A first inductor L1A second inductor L2A third inductor L3Storage battery Ub
Wherein the first N-type IGBT transistor S1Emitter and first diode D1Is connected with the anode of the first N-type IGBT transistor S1Collector electrode of and the first diode D1Is connected with the cathode of the second N-type IGBT transistor S2And the second diode D2Is connected with the anode of the second N typeIGBT transistor S2Collector and second diode D2Is connected with the cathode of the third N-type IGBT transistor S3And the third diode D3Is connected with the anode of the third N-type IGBT transistor S3Collector and third diode D3Is butted with the cathode of the fourth N type IGBT transistor S4Emitter of and fourth diode D4Is butted with the anode of the fourth N type IGBT transistor S4Collector and fourth diode D4Is butted with the cathode of the fifth N type IGBT transistor S5Emitter of and fifth diode D5Is butted with the anode of the fifth N type IGBT transistor S5Collector and fifth diode D5Is butted with the cathode of the sixth N type IGBT transistor S6And the sixth diode D6Is butted with the anode of the sixth N type IGBT transistor S6Collector and sixth diode D6Is butted with the cathode of the seventh N type IGBT transistor S7And a seventh diode D7Is butted with the anode of the seventh N type IGBT transistor S7Collector and seventh diode D7The cathodes of the two electrodes are butted;
AC power supply UsOne end of the first inductor L is connected in series with the first inductor L1Then are respectively butted with a first N type IGBT transistor S1Emitter electrode of (1), second N-type IGBT transistor S2Collector electrode of, alternating current power supply UsAre respectively butted with a third N-type IGBT transistor S3Emitter electrode of (1), fourth N-type IGBT transistor S4A collector electrode of (a);
first N-type IGBT transistor S1Collector electrode of, and a third N-type IGBT transistor S3Collector electrode of (1), fifth N type IGBT transistor S5Collector electrode, first thin film capacitor C1One end of the four-way valve is butted; second N-type IGBT transistor S2Emitter electrode of (1), fourth N-type IGBT transistor S4Emitter electrode of (1), seventh N-type IGBT transistor S7Emitter electrode, first thin film capacitor C1The other end of (C), a second thin film capacitor (C)2One end of the battery UbThe six cathodes are butted; fifth N-type IGBT transistor S5Respectively connected with the sixth N-type IGBT transistor S6Collector electrode of, and second inductor L2One end of (a); second inductance L2The other end of the battery is butted with a storage battery UbThe positive electrode of (1); sixth N type IGBT transistor S6Emitter electrode of (1), seventh N-type IGBT transistor S7Collector electrode of, and third inductor L3One end of the three parts are butted; third inductance L3The other end of the first thin film capacitor C is butted with a second thin film capacitor C2And the other end of the same.
In view of the above, the technical problem to be solved by the present invention is to provide a control method for a power battery integrated charging power converter with a bus harmonic absorption function, which can stabilize bus voltage, reduce harmonic influence, improve power quality, provide more stable current for a load, charge a battery, reduce power devices and driving resources, and reduce volume and control cost.
The invention adopts the following technical scheme for solving the technical problems: the invention designs a control method of a power battery integrated charging power converter with a bus harmonic absorption function, which comprises the following steps:
step A, collecting a first thin film capacitor C1The voltage across the terminals, i.e. the value of the bus voltage VDCAnd obtaining the reference voltage of the bus and the bus reference voltage
Figure GDA0003108004240000031
And PI control is executed according to the error to obtain the current reference amplitude
Figure GDA0003108004240000032
Then entering the step B;
step B, controlling an alternating current power supply UsVoltage value v ofsSequentially obtaining voltage phase through a PLL, then performing sin processing, and obtaining a result and a current reference amplitude
Figure GDA0003108004240000033
Multiplying to obtain a first current reference value
Figure GDA0003108004240000034
Then entering step C;
step C, collecting the signal passing through the first inductor L1Actual current value isAnd obtaining the reference value and the first current reference value
Figure GDA0003108004240000035
PI control and PWM processing are sequentially executed according to the error to obtain the first N-type IGBT transistor S corresponding to each other1And a second N-type IGBT transistor S2And a third N-type IGBT transistor S3And a fourth N-type IGBT transistor S4Control signal S'1S′2、S′3、S′4Then entering step D;
step D, collecting the secondary inductor L2Actual current value ibAnd obtaining the reference value and the second current reference value
Figure GDA0003108004240000036
The difference between the first and second IGBT transistors S is subjected to PI control and PWM processing in sequence to obtain a fifth N-type IGBT transistor S5Control signal S'5Then entering step E;
step E, collecting a second thin film capacitor C2Voltage V acrossaAnd obtaining a voltage V via a zero-order keeperaFundamental component voltage V ofa0Then entering step F;
step F. obtaining a voltage VaFundamental component voltage Va0And a reference fundamental component voltage
Figure GDA0003108004240000037
The difference between the two is subjected to PI control to obtain a voltage VaD, controlling a result by the difference value PI, and then entering the step G;
g, collecting corresponding bus voltage value VDCBus current iDCAnd obtaining the bus current i through a second-order band-pass filterDCThen step H is performed;
step (ii) ofH. Controlling bus current iDCSecond harmonic component and voltage VaAdding the difference PI control results to obtain a current reference value
Figure GDA0003108004240000038
And obtain it and pass through the third inductor L3Actual current value irThen, the difference value is subjected to repetitive controller and PWM control in sequence to obtain a corresponding seventh N-type IGBT transistor S7Control signal S'7Then entering step I;
step I. for the fifth N-type IGBT transistor S5Control signal S'5And seventh N type IGBT transistor S7Control signal S'7Executing XOR logic operation to obtain the corresponding sixth N-type IGBT transistor S6Control signal S'6Then, go to step J;
step J, applying the first N type IGBT transistor S corresponding to the application1And a second N-type IGBT transistor S2And a third N-type IGBT transistor S3And a fourth N-type IGBT transistor S4And a fifth N-type IGBT transistor S5And the sixth N type IGBT transistor S6And seventh N type IGBT transistor S7Control signal S'1、S′2、S′3、S′4、S′5、S′6、S′7For the first N-type IGBT transistor S, respectively1And a second N-type IGBT transistor S2And a third N-type IGBT transistor S3And a fourth N-type IGBT transistor S4And a fifth N-type IGBT transistor S5And the sixth N type IGBT transistor S6And seventh N type IGBT transistor S7And (5) controlling.
As a preferred technical scheme of the invention: based on the execution of the steps A to J, the power battery integrated charging power converter with the bus harmonic absorption function respectively forms two working modes as follows:
the first working mode is a bus harmonic absorption working mode, wherein a fifth N-type IGBT transistor S5And a sixth N type IGBT transistor S6Form a first synthesized switch tube
Figure GDA0003108004240000041
First synthesis switch tube
Figure GDA0003108004240000042
And a seventh N type IGBT transistor S7To form a bus harmonic wave absorption circuit,
Figure GDA0003108004240000043
control signal of and S7Are complementary to the control signal, i.e.
Figure GDA0003108004240000044
Is turned on by the control signal S7The control signal of (2) is turned off; or
Figure GDA0003108004240000045
Control signal of (S) is turned off, S7Is turned on;
the second working mode is a PFC rectification-voltage reduction DC-DC conversion working mode, wherein the sixth N type IGBT transistor S6And a seventh N type IGBT transistor S7Form a second synthesized switch tube
Figure GDA0003108004240000046
Second synthesis switch tube
Figure GDA0003108004240000047
And a fifth N-type IGBT transistor S5A second synthesis switch tube for forming a step-down DC-DC converter circuit
Figure GDA0003108004240000048
And a fifth N-type IGBT transistor S5Are complementary to each other, i.e. second synthesis switching tube
Figure GDA0003108004240000049
Is turned on, and a fifth N-type IGBT transistor S5Turning off; or a second synthesis switch tube
Figure GDA00031080042400000410
Is turned off, the fifth N-type IGBT transistor S5And conducting.
Compared with the prior art, the power battery integrated charging power converter with the bus harmonic absorption function and the control method thereof have the following technical effects:
the power battery integrated charging power converter with the bus harmonic absorption function adopts a brand new power topological structure, can reduce the volume of a system, improve the charging efficiency and prolong the service life of a battery, and simultaneously designs a corresponding control method to realize the PFC function by utilizing the bus average current control and improve the system operation efficiency; the bus harmonic wave absorption circuit is utilized to keep the bus voltage stable, so that the harmonic wave influence is reduced, and the electric energy quality is improved; meanwhile, a voltage reduction type DC-DC circuit is utilized to provide more stable current for a load, the current is supplied to a battery for charging, the charging efficiency is improved, the integrated control of the power battery integrated charging power converter with the bus harmonic absorption function is correspondingly realized, power devices and driving resources can be reduced, the size is reduced, the cost is reduced, and the system operation efficiency is improved.
Drawings
FIG. 1 is a schematic diagram of a power battery integrated charging power converter with bus harmonic absorption according to the present invention;
FIG. 2 is a schematic structural diagram of the present invention designed for bus harmonic absorption mode of operation;
FIG. 3 is a schematic diagram of the structure of the PFC rectification-buck DC-DC conversion mode of the present invention;
FIG. 4 is a schematic diagram of a control method of the power battery integrated charging power converter with bus harmonic absorption function according to the present invention;
FIG. 5 is a schematic diagram of the control of the zeroth order keeper of the present design;
FIG. 6 is a control schematic of a second order bandpass filter in the design of the present invention;
FIG. 7 is a control schematic of a repetitive controller in the design of the present invention.
Detailed Description
The following description will explain embodiments of the present invention in further detail with reference to the accompanying drawings.
The invention designs a power battery integrated charging power converter with a bus harmonic wave absorption function, which integrates a bus harmonic wave absorption circuit on the basis of a traditional full-control rectifier bridge cascade buck DC-DC converter, and concretely comprises an alternating current power supply U in practical application as shown in figure 1sA first N-type IGBT transistor S1A first diode D1And a second N-type IGBT transistor S2A second diode D2And a third N-type IGBT transistor S3A third diode D3And a fourth N-type IGBT transistor S4A fourth diode D4And a fifth N-type IGBT transistor S5A fifth diode D5And the sixth N type IGBT transistor S6A sixth diode D6And seventh N type IGBT transistor S7The seventh diode D7A first thin film capacitor C1A second thin film capacitor C2A first inductor L1A second inductor L2A third inductor L3Storage battery Ub
Wherein the first N-type IGBT transistor S1Emitter and first diode D1Is connected with the anode of the first N-type IGBT transistor S1Collector electrode of and the first diode D1Is connected with the cathode of the second N-type IGBT transistor S2And the second diode D2Is connected with the anode of the second N-type IGBT transistor S2Collector and second diode D2Is connected with the cathode of the third N-type IGBT transistor S3And the third diode D3Is connected with the anode of the third N-type IGBT transistor S3Collector and third diode D3Is butted with the cathode of the fourth N type IGBT transistor S4Emitter of and fourth diode D4Is butted with the anode of the fourth N type IGBT transistor S4Collector and fourth diode D4Is butted with the cathode of the fifth N type IGBT transistor S5Emitter and secondFive diodes D5Is butted with the anode of the fifth N type IGBT transistor S5Collector and fifth diode D5Is butted with the cathode of the sixth N type IGBT transistor S6And the sixth diode D6Is butted with the anode of the sixth N type IGBT transistor S6Collector and sixth diode D6Is butted with the cathode of the seventh N type IGBT transistor S7And a seventh diode D7Is butted with the anode of the seventh N type IGBT transistor S7Collector and seventh diode D7Are butted.
AC power supply UsOne end of the first inductor L is connected in series with the first inductor L1Then are respectively butted with a first N type IGBT transistor S1Emitter electrode of (1), second N-type IGBT transistor S2Collector electrode of, alternating current power supply UsAre respectively butted with a third N-type IGBT transistor S3Emitter electrode of (1), fourth N-type IGBT transistor S4The collector electrode of (1).
First N-type IGBT transistor S1Collector electrode of, and a third N-type IGBT transistor S3Collector electrode of (1), fifth N type IGBT transistor S5Collector electrode, first thin film capacitor C1One end of the four-way valve is butted; second N-type IGBT transistor S2Emitter electrode of (1), fourth N-type IGBT transistor S4Emitter electrode of (1), seventh N-type IGBT transistor S7Emitter electrode, first thin film capacitor C1The other end of (C), a second thin film capacitor (C)2One end of the battery UbThe six cathodes are butted; fifth N-type IGBT transistor S5Respectively connected with the sixth N-type IGBT transistor S6Collector electrode of, and second inductor L2One end of (a); second inductance L2The other end of the battery is butted with a storage battery UbThe positive electrode of (1); sixth N type IGBT transistor S6Emitter electrode of (1), seventh N-type IGBT transistor S7Collector electrode of, and third inductor L3One end of the three parts are butted; third inductance L3The other end of the first thin film capacitor C is butted with a second thin film capacitor C2And the other end of the same.
By adopting the circuit topology, the number of the switching tubes can be saved while the bus harmonic wave absorption circuit and the voltage reduction type DC-DC converter are integrated, so that the driving resources can be reduced, and the cost can be reduced.
Based on the power battery integrated charging power converter with the bus harmonic absorption function, the invention further designs a control method for the converter, and specifically executes the following steps a to J as shown in fig. 4.
Step A, average current control is adopted for a direct current bus to realize a PFC function, and a first thin film capacitor C is collected1The voltage across the terminals, i.e. the value of the bus voltage VDCAnd obtaining the reference voltage of the bus and the bus reference voltage
Figure GDA0003108004240000071
And PI control is executed according to the error to obtain the current reference amplitude
Figure GDA0003108004240000072
Then step B is entered.
Step B, controlling an alternating current power supply UsVoltage value v ofsSequentially obtaining voltage phase through a PLL, then performing sin processing, and obtaining a result and a current reference amplitude
Figure GDA0003108004240000073
Multiplying to obtain a first current reference value
Figure GDA0003108004240000074
Then step C is entered.
Step C, collecting the signal passing through the first inductor L1Actual current value isAnd obtaining the reference value and the first current reference value
Figure GDA0003108004240000075
PI control and PWM processing are sequentially executed according to the error to obtain the first N-type IGBT transistor S corresponding to each other1And a second N-type IGBT transistor S2And a third N-type IGBT transistor S3And a fourth N-type IGBT transistor S4Control signal S'1、S′2、S′3、S′4Then, step D is entered.
Step D, collecting the secondary inductor L2Actual current value ibAnd obtaining the reference value and the second current reference value
Figure GDA0003108004240000076
The difference between the first and second IGBT transistors S is subjected to PI control and PWM processing in sequence to obtain a fifth N-type IGBT transistor S5Control signal S'5Then, step E is entered.
Step E, collecting a second thin film capacitor C2Voltage V acrossaAnd obtaining a voltage V via a zero-order keeperaFundamental component voltage V ofa0Then, step F is entered.
In practice, as shown in FIG. 5, the transfer function in the zeroth order keeper is
Figure GDA0003108004240000077
Where T is the ac power cycle, T1/f, f is the power frequency, s represents the variable sign in the rawland transform, e represents an irrational number, specifically 2.7182818 …, and the voltage VaAfter passing through the zero-order retainer, the voltage fundamental wave V after harmonic filtering can be obtaineda0
Step F. obtaining a voltage VaFundamental component voltage Va0And a reference fundamental component voltage
Figure GDA0003108004240000078
The difference between the two is subjected to PI control to obtain a voltage VaAnd G, controlling the result by the difference value PI, and then entering the step G.
G, collecting corresponding bus voltage value VDCBus current iDCAnd obtaining the bus current i through a second-order band-pass filterDCThen step H is entered.
In practical applications, as shown in fig. 6, the transfer function in the second-order band-pass filter is as follows:
Figure GDA0003108004240000081
wherein, ω is 2 pi f, f is the power frequency, h represents that what needs to filter is the second harmonic, and in practical application, h is 2, and xi takes on the value of 0.01 ~ 0.02. Current iDCAn oscillating second harmonic component, namely the current required to be absorbed by the bus harmonic absorption circuit, is obtained through the second-order band-pass filter.
Step H, controlling bus current iDCSecond harmonic component and voltage VaAdding the difference PI control results to obtain a current reference value
Figure GDA0003108004240000082
And obtain it and pass through the third inductor L3Actual current value irThen, the difference value is subjected to repetitive controller and PWM control in sequence to obtain a corresponding seventh N-type IGBT transistor S7Control signal S'7Then step I is entered.
In practical application, as shown in fig. 7, the repetitive controller adopts the internal model principle, which can reduce the static error of the system, wherein τdIs 0.0099s, omegaiHas a value of 10000rad/sec, KrIs 25.
Step I. for the fifth N-type IGBT transistor S5Control signal S'5And seventh N type IGBT transistor S7Control signal S'7Executing XOR logic operation to obtain the corresponding sixth N-type IGBT transistor S6Control signal S'6Then, proceed to step J.
Step J, applying the first N type IGBT transistor S corresponding to the application1And a second N-type IGBT transistor S2And a third N-type IGBT transistor S3And a fourth N-type IGBT transistor S4And a fifth N-type IGBT transistor S5And the sixth N type IGBT transistor S6And seventh N type IGBT transistor S7Control signal S'1、S′2、S′3、S′4、S′5、S′6、S′7For the first N-type IGBT transistor S, respectively1And a second N-type IGBT transistor S2And a third N-type IGBT transistor S3And a fourth N-type IGBT transistor S4And a fifth N-type IGBT transistor S5And the sixth N type IGBT transistor S6And seventh N type IGBT transistor S7And (5) controlling.
By adopting the integrated control scheme, the driving resources can be saved, the volume reduction and the cost control are facilitated, meanwhile, the bus voltage can be stabilized, the PFC function is realized, the power quality is improved, and the system operation efficiency is improved.
Based on the above, respectively for the first N-type IGBT transistor S1And a second N-type IGBT transistor S2And a third N-type IGBT transistor S3And a fourth N-type IGBT transistor S4And a fifth N-type IGBT transistor S5And the sixth N type IGBT transistor S6And seventh N type IGBT transistor S7The power battery integrated charging power converter with the bus harmonic absorption function respectively forms two working modes as follows.
As shown in FIG. 2, the first operation mode is a bus harmonic absorption operation mode, in which the fifth N-type IGBT transistor S5And a sixth N type IGBT transistor S6Form a first synthesized switch tube
Figure GDA0003108004240000091
First synthesis switch tube
Figure GDA0003108004240000092
And a seventh N type IGBT transistor S7To form a bus harmonic wave absorption circuit,
Figure GDA0003108004240000093
control signal of and S7Are complementary to the control signal, i.e.
Figure GDA0003108004240000094
Is turned on by the control signal S7The control signal of (2) is turned off; or
Figure GDA0003108004240000095
Control signal of (S) is turned off, S7Is turned on.
As shown in fig. 3, the second operation mode is a PFC rectification-buck DC-DC conversion operation mode, wherein the sixth N-type IGBT transistor S6And a seventh N type IGBT transistor S7Form a second synthesized switch tube
Figure GDA0003108004240000096
Second synthesis switch tube
Figure GDA0003108004240000097
And a fifth N-type IGBT transistor S5A second synthesis switch tube for forming a step-down DC-DC converter circuit
Figure GDA0003108004240000098
And a fifth N-type IGBT transistor S5Are complementary to each other, i.e. second synthesis switching tube
Figure GDA0003108004240000099
Is turned on, and a fifth N-type IGBT transistor S5Turning off; or a second synthesis switch tube
Figure GDA00031080042400000910
Is turned off, the fifth N-type IGBT transistor S5And conducting.
The fifth N-type IGBT transistor S can be obtained through the analysis5And the sixth N type IGBT transistor S6And seventh N type IGBT transistor S7The active states of (1) are 110, 101 and 011, wherein 1 represents that the corresponding switch tube is on, and 0 represents that the corresponding switch tube is off.
The power battery integrated charging power converter with the bus harmonic absorption function is designed by the technical scheme, a brand new power topological structure is adopted, the size of a system can be reduced, the charging efficiency is improved, and the service life of a battery is prolonged; the bus harmonic wave absorption circuit is utilized to keep the bus voltage stable, so that the harmonic wave influence is reduced, and the electric energy quality is improved; meanwhile, a voltage reduction type DC-DC circuit is utilized to provide more stable current for a load, the current is supplied to a battery for charging, the charging efficiency is improved, the integrated control of the power battery integrated charging power converter with the bus harmonic absorption function is correspondingly realized, power devices and driving resources can be reduced, the size is reduced, the cost is reduced, and the system operation efficiency is improved.
The embodiments of the present invention have been described in detail with reference to the drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present invention.

Claims (3)

1. The utility model provides a power battery integration charging power converter with generating line harmonic absorbs function which characterized in that: comprises an AC power supply UsA first N-type IGBT transistor S1A first diode D1And a second N-type IGBT transistor S2A second diode D2And a third N-type IGBT transistor S3A third diode D3And a fourth N-type IGBT transistor S4A fourth diode D4And a fifth N-type IGBT transistor S5A fifth diode D5And the sixth N type IGBT transistor S6A sixth diode D6And seventh N type IGBT transistor S7The seventh diode D7A first thin film capacitor C1A second thin film capacitor C2A first inductor L1A second inductor L2A third inductor L3Storage battery Ub
Wherein the first N-type IGBT transistor S1Emitter and first diode D1Is connected with the anode of the first N-type IGBT transistor S1Collector electrode of and the first diode D1Is connected with the cathode of the second N-type IGBT transistor S2And the second diode D2Is connected with the anode of the second N-type IGBT transistor S2Collector and second diode D2Is connected with the cathode of the third N-type IGBT transistor S3And the third diode D3Is connected with the anode of the third N-type IGBT transistor S3Collector and third diode D3Is butted with the cathode of the fourth N type IGBT transistor S4Emitter of and fourth diode D4Is butted with the anode of the fourth N type IGBT transistor S4Collector and fourth diode D4Is butted with the cathode of the fifth N type IGBT transistor S5Emitter of and fifth diode D5Is butted with the anode of the fifth N type IGBT transistor S5Collector and fifth diode D5Is butted with the cathode of the sixth N type IGBT transistor S6And the sixth diode D6Is butted with the anode of the sixth N type IGBT transistor S6Collector and sixth diode D6Is butted with the cathode of the seventh N type IGBT transistor S7And a seventh diode D7Is butted with the anode of the seventh N type IGBT transistor S7Collector and seventh diode D7The cathodes of the two electrodes are butted;
AC power supply UsOne end of the first inductor L is connected in series with the first inductor L1Then are respectively butted with a first N type IGBT transistor S1Emitter electrode of (1), second N-type IGBT transistor S2Collector electrode of, alternating current power supply UsAre respectively butted with a third N-type IGBT transistor S3Emitter electrode of (1), fourth N-type IGBT transistor S4A collector electrode of (a);
first N-type IGBT transistor S1Collector electrode of, and a third N-type IGBT transistor S3Collector electrode of (1), fifth N type IGBT transistor S5Collector electrode, first thin film capacitor C1One end of the four-way valve is butted; second N-type IGBT transistor S2Emitter electrode of (1), fourth N-type IGBT transistor S4Emitter electrode of (1), seventh N-type IGBT transistor S7Emitter electrode, first thin film capacitor C1The other end of (C), a second thin film capacitor (C)2One end of the battery UbThe six cathodes are butted; fifth N-type IGBT transistor S5Respectively connected with the sixth N-type IGBT transistor S6Collector electrode of, and second inductor L2One end of (a); second inductance L2The other end of the battery is butted with a storage battery UbThe positive electrode of (1); sixth N type IGBT transistor S6Emitter electrode of (1), seventh N-type IGBT transistor S7Collector electrode of, and third inductor L3One end of the three parts are butted; third inductance L3The other end of the first thin film capacitor C is butted with a second thin film capacitor C2And the other end of the same.
2. A control method of a power battery integrated charging power converter with bus harmonic absorption function according to claim 1, characterized by comprising the following steps:
step A, collecting a first thin film capacitor C1The voltage across the terminals, i.e. the value of the bus voltage VDCAnd obtaining the reference voltage of the bus and the bus reference voltage
Figure FDA0003108004230000021
And PI control is executed according to the error to obtain the current reference amplitude
Figure FDA0003108004230000022
Then entering the step B;
step B, controlling an alternating current power supply UsVoltage value v ofsSequentially obtaining voltage phase through a PLL, then performing sin processing, and obtaining a result and a current reference amplitude
Figure FDA0003108004230000023
Multiplying to obtain a first current reference value
Figure FDA0003108004230000024
Then entering step C;
step C, collecting the signal passing through the first inductor L1Actual current value isAnd obtaining the reference value and the first current reference value
Figure FDA0003108004230000025
Error between, forPI control and PWM processing are sequentially executed on the error to obtain a first N-type IGBT transistor S respectively corresponding to the error1And a second N-type IGBT transistor S2And a third N-type IGBT transistor S3And a fourth N-type IGBT transistor S4Control signal S'1、S'2、S′3、S'4Then entering step D;
step D, collecting the secondary inductor L2Actual current value ibAnd obtaining the reference value and the second current reference value
Figure FDA0003108004230000026
The difference between the first and second IGBT transistors S is subjected to PI control and PWM processing in sequence to obtain a fifth N-type IGBT transistor S5Control signal S'5Then entering step E;
step E, collecting a second thin film capacitor C2Voltage V acrossaAnd obtaining a voltage V via a zero-order keeperaFundamental component voltage V ofa0Then entering step F;
step F. obtaining a voltage VaFundamental component voltage Va0And a reference fundamental component voltage
Figure FDA0003108004230000027
The difference between the two is subjected to PI control to obtain a voltage VaD, controlling a result by the difference value PI, and then entering the step G;
g, collecting corresponding bus voltage value VDCBus current iDCAnd obtaining the bus current i through a second-order band-pass filterDCThen step H is performed;
step H, controlling bus current iDCSecond harmonic component and voltage VaAdding the difference PI control results to obtain a current reference value
Figure FDA0003108004230000031
And obtain it and pass through the third inductor L3Actual current value irThe difference between them, and then for the differenceObtaining a corresponding seventh N-type IGBT transistor S through repeated controller and PWM control7Control signal S'7Then entering step I; step I. for the fifth N-type IGBT transistor S5Control signal S'5And seventh N type IGBT transistor S7Control signal S'7Executing XOR logic operation to obtain the corresponding sixth N-type IGBT transistor S6Control signal S'6Then, go to step J; step J, applying the first N type IGBT transistor S corresponding to the application1And a second N-type IGBT transistor S2And a third N-type IGBT transistor S3And a fourth N-type IGBT transistor S4And a fifth N-type IGBT transistor S5And the sixth N type IGBT transistor S6And seventh N type IGBT transistor S7Control signal S'1、S'2、S′3、S'4、S′5、S'6、S'7For the first N-type IGBT transistor S, respectively1And a second N-type IGBT transistor S2And a third N-type IGBT transistor S3And a fourth N-type IGBT transistor S4And a fifth N-type IGBT transistor S5And the sixth N type IGBT transistor S6And seventh N type IGBT transistor S7And (5) controlling.
3. The control method according to claim 2, characterized in that: based on the execution of the steps A to J, the power battery integrated charging power converter with the bus harmonic absorption function respectively forms two working modes as follows:
the first working mode is a bus harmonic absorption working mode, wherein a fifth N-type IGBT transistor S5And a sixth N type IGBT transistor S6Form a first synthesized switch tube
Figure FDA0003108004230000032
First synthesis switch tube
Figure FDA0003108004230000033
And a seventh N type IGBT transistor S7To form a bus harmonic wave absorption circuit,
Figure FDA0003108004230000034
control signal of and S7Are complementary to the control signal, i.e.
Figure FDA0003108004230000035
Is turned on by the control signal S7The control signal of (2) is turned off; or
Figure FDA0003108004230000036
Control signal of (S) is turned off, S7Is turned on;
the second working mode is a PFC rectification-voltage reduction DC-DC conversion working mode, wherein the sixth N type IGBT transistor S6And a seventh N type IGBT transistor S7Form a second synthesized switch tube
Figure FDA0003108004230000037
Second synthesis switch tube
Figure FDA0003108004230000038
And a fifth N-type IGBT transistor S5A second synthesis switch tube for forming a step-down DC-DC converter circuit
Figure FDA0003108004230000039
And a fifth N-type IGBT transistor S5Are complementary to each other, i.e. second synthesis switching tube
Figure FDA00031080042300000310
Is turned on, and a fifth N-type IGBT transistor S5Turning off; or a second synthesis switch tube
Figure FDA00031080042300000311
Is turned off, the fifth N-type IGBT transistor S5And conducting.
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