CN112151681A - Preparation method and application of PbS quantum dot light absorption layer and solar cell - Google Patents
Preparation method and application of PbS quantum dot light absorption layer and solar cell Download PDFInfo
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Abstract
The invention relates to the technical field of solar cells, in particular to a preparation method of a PbS quantum dot light absorption layer, application of the PbS quantum dot light absorption layer and a solar cell. According to the invention, zinc acetate is adopted as an additive, compared with the traditional ammonium acetate, the zinc acetate is still effective to PbS Colloid Quantum Dots (CQD) with an absorption peak larger than 1100nm, the effect of the zinc acetate on the surface of the CQD is stronger, the ligand exchange and phase transfer process of the CQD is facilitated, oleic acid residue is avoided on the surface of the CQD, the transmission of carriers in a solar cell is facilitated, the efficiency of the solar cell is obviously improved, and particularly, the current is greatly increased; and the ligand exchange based on the zinc acetate additive is simpler to operate, time-saving and easy to implement.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a preparation method of a PbS quantum dot light absorption layer, application of the PbS quantum dot light absorption layer and a solar cell.
Background
Lead-sulfur (PbX, X ═ S, Se, Te) Colloidal Quantum Dots (CQD) have the advantages of low cost, solution-processable property, high molar extinction coefficient, adjustable band gap along with the size and the like, and are widely applied to photoelectric devices. The application of PbX CQD in solar cells is concerned, the PbX CQD has larger exciton Bohr radius, and the light absorption range of the PbX CQD can be easily adjusted to a near infrared region by increasing the size of the CQD, so that the utilization rate of sunlight is improved, and the PbX CQD is expected to become a new generation of efficient and stable solar cells.
After the CQD is synthesized, the surface of the CQD is coated with a long-chain insulating ligand, and when the CQD is used in a solar cell, the long-chain insulating ligand may reduce the conductivity between the CQDs, and the long-chain insulating ligand is usually replaced with a short-chain conductive ligand such as halide or small organic molecules. Conventional techniques are typically based on ammonium acetate additives to facilitate ligand exchange. However, the ammonium acetate additive is only effective for CQD with an absorption peak before 1100nm, and if the ammonium acetate additive is used for a CQD ligand exchange process with an absorption peak after 1100nm, the ligand exchange of CQD is still insufficient, and the performance of the solar cell is greatly influenced. Therefore, how to promote the ligand exchange process of the CQD is an important link for improving the performance of the near-infrared quantum dot solar cell.
Disclosure of Invention
The invention aims to provide a preparation method of a PbS quantum dot light absorption layer, application of the preparation method and a solar cell.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a preparation method of a PbS quantum dot light absorption layer, which comprises the following steps:
mixing PbO, oleic acid and octadecene, introducing nitrogen, and carrying out first heating to obtain a lead precursor;
mixing the lead precursor and a hexamethyldisilazane solution for nucleation growth reaction, and adding acetone to remove supernatant to obtain PbS colloidal quantum dots;
mixing the PbS colloidal quantum dots, n-hexane and acetone, performing first centrifugation, removing supernatant, adding n-hexane, performing second centrifugation, drying, and mixing with n-octane to obtain an oleic acid-coated PbS colloidal quantum dot solution;
mixing lead iodide, zinc acetate and dimethylformamide, then mixing with the PbS colloidal quantum dot solution coated by oleic acid, standing, removing supernatant, adding n-octane, removing supernatant, adding toluene, and centrifuging to obtain colloidal quantum dots;
mixing the mixed solution of butylamine and dimethylformamide with the colloidal quantum dots to obtain colloidal quantum dot ink;
and coating the colloid quantum dot ink on the surface of a substrate, and heating for the second time to obtain the PbS quantum dot light absorption layer.
Preferably, the mass of PbO, the volume of oleic acid and the volume ratio of octadecene are (0.4-0.5) g: (6-10) mL: (16-20) mL;
the volume ratio of the mass of PbO to the hexamethyldisilazane solution is (0.4-0.5) g: (0.20-0.24) mL.
Preferably, the temperature for mixing the PbO, the oleic acid and the octadecene is 110-130 ℃, and the time is 25-35 min;
the temperature of the nucleation growth reaction is 90-100 ℃.
Preferably, the rotation speed of the first centrifugation and the rotation speed of the second centrifugation are 8000-10000 rpm independently, and the time is 3-8 min independently.
Preferably, the concentration of the oleic acid-coated PbS colloidal quantum dots in the oleic acid-coated PbS colloidal quantum dot solution is 6-50 mg/mL.
Preferably, the concentration of the colloidal quantum dot ink is 250-350 mg/mL.
Preferably, the second heating temperature is 75-85 ℃, and the second heating time is 8-12 min.
The invention also provides the PbS quantum dot light absorption layer prepared by the preparation method in the technical scheme, and the PbS quantum dot light absorption layer is made of PbS quantum dots modified by lead iodide and zinc acetate.
The invention also provides application of the PbS quantum dot light absorption layer in the technical scheme in a solar cell.
The invention also provides a solar cell, which comprises the conductive glass, the electron transmission layer, the PbS quantum dot light absorption layer, the hole transmission layer and the metal electrode which are sequentially stacked;
the PbS quantum dot light absorption layer is prepared by the preparation method in the technical scheme.
The invention provides a preparation method of a PbS quantum dot light absorption layer, which comprises the following steps: mixing PbO, oleic acid and octadecene, introducing nitrogen, and carrying out first heating to obtain a lead precursor; mixing the lead precursor and a hexamethyldisilazane solution for nucleation growth reaction, and adding acetone to remove supernatant to obtain PbS colloidal quantum dots; mixing the PbS colloidal quantum dots, n-hexane and acetone, performing first centrifugation, removing supernatant, adding n-hexane, performing second centrifugation, drying, and mixing with n-octane to obtain an oleic acid-coated PbS colloidal quantum dot solution; mixing lead iodide, zinc acetate and dimethylformamide, then mixing with the PbS colloidal quantum dot solution coated by oleic acid, standing, removing supernatant, adding n-octane, removing supernatant, adding toluene, and centrifuging to obtain colloidal quantum dots; mixing the mixed solution of butylamine and dimethylformamide with the colloidal quantum dots to obtain colloidal quantum dot ink; and coating the colloidal quantum dot ink on the surface of the electron transport layer, and heating to obtain the PbS quantum dot light absorption layer. Since the purpose of the conventional ammonium acetate as an additive is to promote the ligand exchange process of lead iodide with CQD surface oleic acid while achieving phase transfer of CQD. However, for CQDs with absorption peaks greater than 1100nm, the ammonium acetate additive failed to promote the ligand exchange and phase transfer processes, resulting in residual oleic acid ligands on the surface of the CQD, affecting the transport of charge carriers in the solar cell. At this time, it is often necessary to assist the phase transfer process by centrifugation, and the CQD suspended between Dimethylformamide (DMF) and n-octane is also necessary to be removed after centrifugation, which greatly reduces the yield of CQD ink. Compared with the traditional ammonium acetate, the zinc acetate is still effective to CQD with an absorption peak larger than 1100nm, has stronger action with the surface of the CQD, is more favorable for promoting the ligand exchange and phase transfer process of the CQD, and ensures that the surface of the CQD has no oleic acid residue, thereby being more favorable for the transmission of current carriers in the solar cell, obviously improving the efficiency of the solar cell, and particularly greatly increasing the current; and the ligand exchange based on the zinc acetate additive is simpler to operate, time-saving and easy to implement.
Drawings
Fig. 1 is an absorption spectrum of PbS quantum dots prepared in example 1;
FIG. 2 is a process diagram of ligand exchange using zinc acetate as an additive and ligand exchange using ammonium acetate as an additive according to the present application;
FIG. 3 is a voltammetry characteristic curve of the solar cell prepared in examples 1-2 and the solar cell prepared in comparative example 1;
FIG. 4 is a graph comparing the external quantum efficiency and the integrated current of the solar cell prepared in examples 1-2 and the solar cell prepared in comparative example 1;
fig. 5 is a current-voltage characteristic curve of the solar cell prepared in example 3;
fig. 6 is a graph comparing the external quantum efficiency and the integrated current of the solar cell prepared in example 3.
Detailed Description
The invention provides a preparation method of a PbS quantum dot light absorption layer, which comprises the following steps:
mixing PbO, oleic acid and octadecene, introducing nitrogen, and heating for the first time to obtain a lead precursor;
mixing the lead precursor and a hexamethyldisilazane solution for nucleation growth reaction, and adding acetone to remove supernatant to obtain PbS colloidal quantum dots;
mixing the PbS colloidal quantum dots, n-hexane and acetone, performing first centrifugation, removing supernatant, adding n-hexane, performing second centrifugation, drying, and mixing with n-octane to obtain an oleic acid-coated PbS colloidal quantum dot solution;
mixing lead iodide, zinc acetate and dimethylformamide, then mixing with the PbS colloidal quantum dot solution coated by oleic acid, standing, removing supernatant, adding n-octane, removing supernatant, adding toluene, and centrifuging to obtain colloidal quantum dots;
mixing the mixed solution of butylamine and dimethylformamide with the colloidal quantum dots to obtain colloidal quantum dot ink;
and coating the colloid quantum dot ink on the surface of a substrate, and heating to obtain the PbS quantum dot light absorption layer.
In the present invention, all the raw material components are commercially available products well known to those skilled in the art unless otherwise specified.
The method comprises the steps of mixing PbO, oleic acid and octadecene, introducing nitrogen, and carrying out first heating to obtain a lead precursor. In the present invention, the octadecene is preferably 1-octadecene. In the present invention, the mass of PbO, the volume of oleic acid, and the volume ratio of octadecene are preferably (0.4 to 0.5) g: (6-10) mL: (16-20) mL, more preferably 0.45 g: 9mL of: 18 mL. The present invention does not limit the mixing in any particular way, and the mixing may be carried out by a process known to those skilled in the art.
In the present invention, the first heating is preferably performed under stirring. In the invention, the first heating temperature is preferably 115-125 ℃, and more preferably 120 ℃; the first heating time is preferably not less than 30min, and more preferably 30-60 min.
In the invention, the heating process enables PbO and oleic acid to fully react to generate a lead oleate precursor, and air in the mixed liquid is removed.
After the lead precursor is obtained, the lead precursor and hexamethyldisilazane solution are mixed for nucleation growth reaction, and acetone is added to remove the supernatant, so that the PbS colloidal quantum dot is obtained. In the present invention, the hexamethyldisilazane solution is preferably an octadecene solution of hexamethyldisilazane; preferably, the octadecene is 1-octadecene. In the present invention, the volume ratio of hexamethyldisilazane to octadecene in the hexamethyldisilazane-octadecene solution is preferably (0.2 to 0.24): (1.8 to 2.2), more preferably 0.21: 2.0. in the present invention, the volume ratio of the mass of PbO to the hexamethyldisilazane is preferably (0.4 to 0.5) g: (0.20 to 0.24) mL, more preferably 0.45 g: 0.21 mL.
In the invention, the mixing temperature of the lead precursor and the hexamethyldisilazane solution is preferably 90-100 ℃, and more preferably 95 ℃. In the present invention, the mixing is preferably performed by adding a hexamethyldisilazane solution to the lead precursor.
In the present invention, in the mixing process, the PbS colloidal quantum dots undergo nucleation and growth processes. The nucleation was marked by the blackening of the mixture, followed by the start of growth, and the end of growth after cooling to room temperature.
In the invention, the volume ratio of the acetone to the oleic acid is preferably (18-22): 3, more preferably 20: 3.
After the acetone is added, the present invention preferably further comprises heating the mixed solution obtained by adding the acetone. In the present invention, the heating is preferably performed under the condition of stirring, and the stirring is not particularly limited in the present invention, and may be performed by a process well known to those skilled in the art. In the invention, the heating temperature is preferably 40-50 ℃, more preferably 45 ℃, and the heating time is preferably 5 min. After the heating is finished, the invention also preferably comprises standing and layering; the present invention does not have any particular limitation on the standing delamination, and can be carried out by a process well known to those skilled in the art.
After the standing and the layering are carried out and the supernatant is removed, the invention also preferably comprises the process of adding the acetone, wherein the repetition frequency is preferably 2 times.
After the PbS colloidal quantum dots are obtained, the PbS colloidal quantum dots, n-hexane and acetone are mixed, first centrifugation is carried out, supernatant is removed, n-hexane is added, second centrifugation is carried out, then drying is carried out, and the PbS colloidal quantum dots are mixed with n-octane to obtain the PbS colloidal quantum dot solution coated by oleic acid. In the invention, the volume ratio of the n-hexane to the oleic acid in the first centrifugation process is preferably (18-22): 9, more preferably 20: 9. The volume ratio of the n-hexane to the acetone is preferably (18-22): (58-62), more preferably 20: 60. In the invention, the rotating speed of the first centrifugation is preferably 8000-10000 rpm, more preferably 8000 rpm; the time of the first centrifugation is preferably 3-8 min, and more preferably 5 min. In the present invention, the amount of n-hexane used in the second centrifugation is preferably the same as the amount of n-hexane used in the first centrifugation. In the invention, the rotating speed of the second centrifugation is preferably 8000-10000 rpm, and more preferably 9000 rpm; the time of the second centrifugation is preferably 3-8 min, and more preferably 5 min.
After the second centrifugation, the present invention preferably removes solid material and takes the supernatant.
The present invention also preferably comprises drying the resulting supernatant; the drying is preferably carried out by blowing with nitrogen.
After the drying is finished, the CQD obtained after the drying is mixed with n-octane to obtain the PbS colloidal quantum dot solution coated by the oleic acid. The present invention does not limit the mixing in any particular way, and the mixing may be carried out by a process known to those skilled in the art.
In the invention, the concentration of the PbS colloidal quantum dots coated in the oleic acid-coated PbS colloidal quantum dot solution is preferably 6-50 mg/mL, and more preferably 6-20 mg/mL.
After the PbS colloidal quantum dot solution coated by oleic acid is obtained, mixing lead iodide, zinc acetate and dimethylformamide, mixing with the PbS colloidal quantum dot solution coated by oleic acid, standing, removing supernatant, adding n-octane, removing supernatant, adding toluene, and centrifuging to obtain colloidal quantum dots; in the invention, the molar ratio of the lead iodide to the zinc acetate is preferably (0.5-1.2): (0.1 to 0.28), and more preferably 1: 0.25. The volume ratio of the lead iodide substance to the dimethylformamide is preferably (0.18-0.22) mmol: 1mL, more preferably 0.2 mmol: 1 mL. In the present invention, the mixing is preferably performed under an air atmosphere and under stirring; the rotation speed of the stirring is not particularly limited in the present invention, and may be a rotation speed known to those skilled in the art. The stirring time is not particularly limited in the present invention, and lead iodide and zinc acetate may be completely dissolved in DMF by using a time known to those skilled in the art.
In the invention, after the mixing of the lead iodide, the zinc acetate and the dimethylformamide is completed, the mixed solution obtained after the mixing is mixed with the oleic acid-coated PbS colloidal quantum dot solution, in the invention, the oleic acid-coated PbS colloidal quantum dot solution is preferably diluted before the mixing, and the concentration of the diluted oleic acid-coated PbS colloidal quantum dot solution is preferably 6-20 mg/mL. In the present invention, the volume of the mixed solution is preferably the same as the volume of the oleic acid-coated PbS colloidal quantum dot solution. In the present invention, the mixing is preferably performed under stirring conditions, and the stirring speed in the present invention is not particularly limited, and may be performed at a speed known to those skilled in the art. The stirring time in the present invention is not particularly limited, and may be a time known to those skilled in the art. In the present invention, lead iodide and zinc acetate exchange the oleic acid ligand on the surface of CQD during the mixing process, and the CQD is transferred from the n-octane solution to the DMF solution.
(the ligand exchange process is shown in FIG. 2, wherein the upper diagram is the ligand exchange process based on the ammonium acetate additive, and the lower diagram is the ligand exchange process based on the zinc acetate additive, and it can be seen from FIG. 2 that the ligand exchange reaction based on the zinc acetate additive is more sufficient, and the ligand exchange based on the ammonium acetate additive is insufficient).
In the invention, the standing time is preferably 1-3 min, and more preferably 2 min. In the present invention, after the completion of the standing, the upper n-octane solution turned from black to colorless and transparent, and the lower DMF solution turned from yellow to black.
In the present invention, the volume of the n-octane is preferably the same as the volume of the oleic acid-coated PbS colloidal quantum dot solution, and the n-octane is preferably added under stirring; the stirring is not particularly limited in the present invention, and may be carried out by a procedure well known to those skilled in the art.
In the present invention, the addition of n-octane serves to remove the CQD surface and a small amount of oleic acid ligand in DMF solution.
After the processes of adding n-octane and removing the supernatant are completed, the present invention preferably includes repeating the above processes of adding n-octane and removing the supernatant once.
In the present invention, the volume ratio of the toluene to the n-octane is preferably 4: 5. The rotation speed of the centrifugation is preferably 4000rpm, and the time of the centrifugation is preferably 3 min.
In the present invention, the toluene is added to precipitate CQD from DMF solution as an anti-solvent for the preparation of CQD powder.
After the addition of toluene and centrifugation is complete, the present invention also preferably includes drying. In the invention, the drying is preferably vacuum drying, and the time of the vacuum drying is preferably 15 min; the temperature of the vacuum drying is not particularly limited in the present invention, and may be performed by a process well known to those skilled in the art.
After the colloidal quantum dots are obtained, the mixed solution of butylamine and dimethylformamide is mixed with the colloidal quantum dots to obtain the colloidal quantum dot ink. In the present invention, the volume ratio of dimethylformamide in the mixed solution of butylamine and dimethylformamide is preferably 20: 1. In the present invention, the mixing is preferably carried out under shaking conditions; the invention has no special limitation on the oscillation condition, and the oscillation is carried out by adopting the process well known by the technical personnel in the field, and the colloidal quantum dots are ensured to be fully dissolved. In the invention, the concentration of the colloidal quantum dot ink is preferably 250-350 mg/mL, and more preferably 300 mg/mL.
After the mixing is completed, the invention also preferably comprises centrifugation, the rotation speed of the centrifugation is preferably 10000rpm, and the time of the centrifugation is preferably 1 min. In the present invention, the purpose of the centrifugation is to remove a small amount of undissolved CQD. And after the centrifugation is finished, removing bottom sediment to obtain the CQD ink.
After the colloidal quantum dot ink is obtained, the colloidal quantum dot ink is coated on the surface of a substrate, and the PbS quantum dot light absorption layer is obtained by second heating. In the present invention, the coating is preferably spin coating; the spin coating is not particularly limited in the present invention, and may be performed by a process known to those skilled in the art. In the invention, the second heating temperature is preferably 75-85 ℃, more preferably 80 ℃, and the second heating time is preferably 8-12 min, more preferably 10 min.
The invention also provides the PbS quantum dot light absorption layer prepared by the preparation method in the technical scheme, and the PbS quantum dot light absorption layer is made of PbS quantum dots modified by lead iodide and zinc acetate.
The invention also provides application of the PbS quantum dot light absorption layer prepared by the preparation method in the technical scheme in a solar cell.
The invention also provides a solar cell, which comprises the conductive glass, the electron transmission layer, the PbS quantum dot light absorption layer, the hole transmission layer and the metal electrode which are sequentially stacked;
the PbS quantum dot light absorption layer is prepared by the preparation method in the technical scheme.
In the present invention, the solar cell includes a conductive glass. The material of the conductive glass is not limited in any way, and materials well known to those skilled in the art can be used. Such as FTO or ITO.
In the present invention, the solar cell includes an electron transport layer; the material of the electron transport layer is preferably ZnO or TiO2Or SnO2(ii) a The thickness of the electron transport layer is preferably 75-85 nm, and more preferably 80 nm.
In the invention, the solar cell comprises a PbS quantum dot light absorption layer, and the PbS quantum dot light absorption layer is prepared by the preparation method in the technical scheme; the thickness of the PbS quantum dot light absorption layer is preferably 250-350 nm, and more preferably 300 nm.
In the invention, the solar cell comprises a hole transport layer, and the material of the hole transport layer is preferably ethanedithiol modified PbS quantum dots (PbS-EDT), mercaptopropionic acid modified PbS quantum dots (PbS-MPA) or molybdenum trioxide (MoO)3) (ii) a The thickness of the hole transport layer is preferably 30-80 nm, and more preferably 50 nm.
In the present invention, the solar cell comprises a metal electrode, preferably a gold electrode; the thickness of the metal electrode is preferably 50-100 nm.
In the present invention, the method for manufacturing a solar cell preferably includes the steps of:
and sequentially preparing an electron transmission layer, a PbS quantum dot light absorption layer, a hole transmission layer and a metal electrode on the upper surface of the conductive glass to obtain the solar cell.
In the present invention, the method for preparing the electron transport layer is preferably a coating method, and the coating method is not particularly limited, and may be performed by a process well known to those skilled in the art. In the embodiment of the present invention, the following is specifically provided: when the electron transport layer is ZnO, the preparation process of the electron transport layer is as follows: mixing 0.55g of zinc acetate dihydrate, 10mL of methanol and 100 muL of ethanolamine, performing ultrasonic treatment for 2min until the solid is completely dissolved, spin-coating the obtained solution on the upper surface of the conductive glass, heating the conductive glass to 350 ℃ from room temperature within 30min, keeping the temperature constant for 30min, and taking out the conductive glass to obtain the electron transport layer.
In the present invention, the process for preparing the PbS quantum dot light absorption layer preferably refers to the preparation of the PbS quantum dot light absorption layer according to the above technical solution, and is not described herein again.
In the present invention, the method for preparing the hole transport layer is preferably coating, and the coating method is not particularly limited, and may be performed by a process well known to those skilled in the art. In the embodiment of the present invention, the following is specifically provided: when the material of the hole transport layer is PbS-EDT, the preparation process of the hole transport layer is as follows: spin-coating a PbS colloidal quantum dot solution coated with an oleic acid ligand with the concentration of 50mg/mL onto the PbS quantum dot light absorption layer to form a PbS colloidal quantum dot film coated with the oleic acid ligand, then paving the substrate with an acetonitrile solution of Ethanedithiol (EDT) with the volume fraction of 0.02%, replacing the oleic acid ligand with the EDT at the moment, waiting for 30s, and washing with acetonitrile for three times to wash out the exchanged oleic acid and residual EDT; the above process is repeated again to obtain a hole transport layer.
In the present invention, the method for preparing the metal electrode is preferably evaporation, and in the present invention, the process for preparing the metal electrode is preferably performed after the hole transport layer is obtained and is preferably left for 12 hours. The evaporation process is not particularly limited, and may be performed by a process known to those skilled in the art.
The technical solution of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Mixing 0.55g of zinc acetate dihydrate, 10mL of methanol and 100 mu L of ethanolamine, performing ultrasonic treatment for 2min until the solid is completely dissolved, spin-coating the obtained solution on FTO, heating to 350 ℃ from room temperature for 30min, and preserving heat for 30min to obtain a ZnO electron transport layer (the thickness is 80 nm);
mixing 0.45g (2mmol) of lead oxide, 9mL of oleic acid and 18mL of 1-octadecene, introducing nitrogen, stirring, heating to 120 ℃, and preserving heat for 30min to obtain a lead precursor;
mu.L of hexamethyldisilathiane [ (TMS)2S]Mixing with 2mL of 1-octadecene to obtain a sulfur precursor;
adding the sulfur precursor into a lead precursor at 95 ℃, cooling the solution to room temperature after the solution turns black, adding 60mL of acetone, keeping the solution at 45 ℃ for 5min, standing for layering, taking out the supernatant, adding 60mL of acetone, repeating twice, adding 20mL of n-hexane, dividing the obtained solution into two centrifuge tubes, adding 30mL of acetone respectively, carrying out first centrifugation (8000rpm, 5min) to remove the supernatant, adding 10mL of n-hexane respectively, carrying out second centrifugation (9000rpm, 5min) to remove bottom impurities, and drying the obtained CQD n-hexane solution by using nitrogen to obtain a CQD solid;
mixing the CQD solid with n-octane to obtain an oleic acid-coated PbS colloidal quantum dot solution with the concentration of 6mg/mL (the absorption peak of a first exciton is 1190 nm);
mixing 0.5mmol of lead iodide, 0.1mmol of zinc acetate and 5mL of DMMF, stirring for 15min at the room temperature in the air until the solid is completely dissolved, stirring 5mL of oleic acid-coated PbS colloidal quantum dot solution (the first exciton absorption peak is 1190nm) with the concentration of 6mg/mL, standing for 2min after stirring for 5min, adding 5mL of n-octane, stirring for 3min, and removing the supernatant; adding 5mL of n-octane once again, adding 2.5mL of toluene, centrifuging for 3min at the rotation speed of 4000rpm, drying in vacuum for 15min, mixing with a mixed solvent of butylamine and DMF in a volume ratio of 20:1, centrifuging for 1min at the rotation speed of 10000rpm, and removing bottom sediment to obtain CQD ink;
spin-coating the CQD ink on a ZnO electron transmission layer, and heating (80 ℃,10min) to obtain a PbS quantum dot light absorption layer (300 nm);
spin-coating the oleic acid-coated PbS colloidal quantum dot solution with the concentration of 50mg/mL onto the PbS quantum dot light absorption layer, then spreading the substrate with an acetonitrile solution of ethanedithiol with the volume fraction of 0.02%, waiting for 30s, washing with acetonitrile for three times, and repeating the steps again to obtain a hole transport layer (50 nm);
and after the mixture is placed for 12 hours, evaporating a gold electrode on the hole transport layer to obtain a gold electrode with the thickness of 80nm, thus obtaining the solar cell.
Example 2
Mixing 0.55g of zinc acetate dihydrate, 10mL of methanol and 100 mu L of ethanolamine, performing ultrasonic treatment for 2min until the solid is completely dissolved, spin-coating the obtained solution on FTO, heating to 350 ℃ from room temperature for 30min, and preserving heat for 30min to obtain a ZnO electron transport layer (the thickness is 80 nm);
mixing 0.5mmol of lead iodide, 0.2mmol of zinc acetate and 5mL of DMMF, stirring for 15min at the room temperature in the air until the solid is completely dissolved, stirring 5mL of oleic acid-coated PbS colloidal quantum dot solution with the concentration of 6mg/mL (the first exciton absorption peak is 1190nm in the preparation of the oleic acid-coated PbS colloidal quantum dot solution in reference example 1), standing for 2min after stirring for 5min, adding 5mL of n-octane, stirring for 3min, and removing the supernatant; adding 5mL of n-octane once again, adding 2.5mL of toluene, centrifuging for 3min at the rotation speed of 4000rpm, drying in vacuum for 15min, mixing with a mixed solvent of butylamine and DMF in a volume ratio of 20:1, centrifuging for 1min at the rotation speed of 10000rpm, and removing bottom sediment to obtain CQD ink;
spin-coating the CQD ink on a ZnO electron transmission layer, and heating (80 ℃,10min) to obtain a PbS quantum dot light absorption layer (300 nm);
spin-coating the oleic acid-coated PbS colloidal quantum dot solution with the concentration of 50mg/mL onto the PbS quantum dot light absorption layer, then spreading the substrate with an acetonitrile solution of ethanedithiol with the volume fraction of 0.02%, waiting for 30s, washing with acetonitrile for three times, and repeating the steps again to obtain a hole transport layer (50 nm);
and after the mixture is placed for 12 hours, evaporating a gold electrode on the hole transport layer to obtain a gold electrode with the thickness of 80nm, thus obtaining the solar cell.
Example 3
Mixing 0.55g of zinc acetate dihydrate, 10mL of methanol and 100 mu L of ethanolamine, performing ultrasonic treatment for 2min until the solid is completely dissolved, spin-coating the obtained solution on FTO, heating to 350 ℃ from room temperature for 30min, and preserving heat for 30min to obtain a ZnO electron transport layer (the thickness is 80 nm);
mixing 0.45g (2mmol) of lead oxide, 9mL of oleic acid and 18mL of 1-octadecene, introducing nitrogen, stirring, heating to 120 ℃, and preserving heat for 30min to obtain a lead precursor;
mu.L of hexamethyldisilathiane [ (TMS)2S]Mixing with 2mL of 1-octadecene to obtain a sulfur precursor;
adding the sulfur precursor into a lead precursor at 95 ℃, cooling the solution to room temperature after the solution turns black, adding 60mL of acetone, keeping the solution at 45 ℃ for 5min, standing for layering, taking out the supernatant, adding 60mL of acetone, repeating twice, adding 20mL of n-hexane, dividing the obtained solution into two centrifuge tubes, adding 30mL of acetone respectively, carrying out first centrifugation (8000rpm, 5min) to remove the supernatant, adding 10mL of n-hexane respectively, carrying out second centrifugation (9000rpm, 5min) to remove bottom impurities, and drying the obtained CQD n-hexane solution by using nitrogen to obtain CQD;
mixing the CQD with n-octane to obtain a PbS colloidal quantum dot solution coated with oleic acid with the concentration of 20 mg/mL;
mixing 1mmol of lead iodide, 0.25mmol of zinc acetate and 5mL of DMF, stirring for 15min at the room temperature in the air until the solid is completely dissolved, stirring 5mL of oleic acid-coated PbS colloidal quantum dot solution with the concentration of 20mg/mL (the first exciton absorption peak is 1190nm in the preparation of the oleic acid-coated PbS colloidal quantum dot solution in reference example 1), standing for 2min after stirring for 5min, adding 5mL of n-octane, stirring for 3min, and removing the supernatant; adding 5mL of n-octane once again, adding 2.5mL of toluene, centrifuging for 3min at the rotation speed of 4000rpm, drying in vacuum for 15min, mixing with a mixed solvent of butylamine and DMF in a volume ratio of 20:1, centrifuging for 1min at the rotation speed of 10000rpm, and removing bottom sediment to obtain CQD ink;
spin-coating the CQD ink on a ZnO electron transmission layer, and heating (80 ℃,10min) to obtain a PbS quantum dot light absorption layer (300 nm);
spin-coating the oleic acid-coated PbS colloidal quantum dot solution with the concentration of 50mg/mL onto the PbS quantum dot light absorption layer, then spreading the substrate with an acetonitrile solution of ethanedithiol with the volume fraction of 0.02%, waiting for 30s, washing with acetonitrile for three times, and repeating the steps again to obtain a hole transport layer (50 nm);
and after the mixture is placed for 12 hours, evaporating a gold electrode on the hole transport layer to obtain a gold electrode with the thickness of 80nm, thus obtaining the solar cell.
Comparative example 1
Mixing 0.55g of zinc acetate dihydrate, 10mL of methanol and 100 mu L of ethanolamine, performing ultrasonic treatment for 2min until the solid is completely dissolved, spin-coating the obtained solution on FTO, heating to 350 ℃ from room temperature for 30min, and preserving heat for 30min to obtain a ZnO electron transport layer (the thickness is 80 nm);
mixing 0.45g (2mmol) of lead oxide, 9mL of oleic acid and 18mL of 1-octadecene, introducing nitrogen, stirring, heating to 120 ℃, and preserving heat for 30min to obtain a lead precursor;
mu.L of hexamethyldisilathiane [ (TMS)2S]Mixing with 2mL of 1-octadecene to obtain a sulfur precursor;
adding the sulfur precursor into a lead precursor at 95 ℃, cooling the solution to room temperature after the solution turns black, adding 60mL of acetone, keeping the solution at 45 ℃ for 5min, standing for layering, taking out the supernatant, adding 60mL of acetone, repeating twice, adding 20mL of n-hexane, dividing the obtained solution into two centrifuge tubes, adding 30mL of acetone respectively, carrying out first centrifugation (8000rpm, 5min) to remove the supernatant, adding 10mL of n-hexane respectively, carrying out second centrifugation (9000rpm, 5min) to remove bottom impurities, and drying the obtained CQD n-hexane solution by using nitrogen to obtain CQD;
mixing the CQD with n-octane to obtain an oleic acid-coated PbS colloidal quantum dot solution with the concentration of 6 mg/mL;
mixing 0.5mmol of lead iodide, 0.2mmol of ammonium acetate and 5mL of DMF, stirring for 15min at the room temperature in the air until the solid is completely dissolved, stirring 5mL of oleic acid coated PbS colloidal quantum dot solution (the first exciton absorption peak is 1190nm) with the concentration of 6mg/mL, standing for 2min after stirring for 5min, centrifuging for 3min at the rotating speed of 4000rpm, removing CQD (CQD with insufficient ligand exchange) suspended between DMF and n-octane, removing the supernatant, adding 5mL of n-octane, stirring for 3min, and removing the supernatant; adding 5mL of n-octane once again, adding 4mL of toluene, centrifuging for 3min at the rotating speed of 4000rpm, drying for 15min in vacuum, mixing with a mixed solvent of butylamine and DMF with the volume ratio of 20:1, centrifuging for 1min at the rotating speed of 10000rpm, and removing bottom sediment to obtain CQD ink;
spin-coating the CQD ink on a ZnO electron transmission layer, and heating (80 ℃,10min) to obtain a PbS quantum dot light absorption layer (300 nm);
spin-coating the oleic acid-coated PbS colloidal quantum dot solution with the concentration of 50mg/mL onto the PbS quantum dot light absorption layer, then spreading the substrate with an acetonitrile solution of ethanedithiol with the volume fraction of 0.02%, waiting for 30s, washing with acetonitrile for three times, and repeating the steps again to obtain a hole transport layer (50 nm);
after the hole transport layer is placed for 12 hours, evaporating a gold electrode on the hole transport layer to obtain a gold electrode with the thickness of 80nm, and obtaining the solar cell;
FIG. 1 shows the absorption spectrum of CQD, and it can be seen from FIG. 1 that the first exciton absorption peak of CQD is located at 1190 nm.
Test example
The solar cells prepared in examples 1-2 and the solar cell prepared in comparative example 1 were subjected to voltammetry characteristics testing: the test conditions were: under the irradiation of an AAA level solar simulator (AM 1.5G, the optical power is calibrated by a standard silicon cell), applying 0.7-0V bias voltage measurement by using a keithley 2634 source meter;
as shown in fig. 3, it can be seen from fig. 3 that, since the zinc acetate additive promotes ligand exchange of the quantum dots, which is beneficial to carrier transmission, the current of the solar cell is also significantly increased as the concentration of the zinc acetate additive increases;
the solar cells prepared in examples 1-2 and the solar cell prepared in comparative example 1 were subjected to an external quantum efficiency test: measured by an external quantum efficiency test system of Tokyo Zhuoli Han optical instruments Co., Ltd. (calibrated by standard silicon and standard indium gallium arsenic detectors);
the test results are shown in fig. 4, and fig. 4 is a comparison of external quantum efficiency and integrated current of the solar cell prepared in examples 1-2 and the solar cell prepared in comparative example 1; as can be seen from FIG. 4, the integrated currents obtained from the external quantum efficiencies of the solar cells prepared in examples 1 to 2 and the solar cell prepared in comparative example 1 were 18.18/20.41 and 21.11mA/cm, respectively2Consistent with the current variation in fig. 3, it indicates that the current of the solar cell is exactly increased;
the solar cell prepared in the embodiment 3 is subjected to volt-ampere characteristic test, and the test condition is that a keithley 2634 source meter is used for applying 0.7-0V bias voltage for measurement under the irradiation of an AAA level solar simulator (AM 1.5G, the optical power is calibrated by a standard silicon cell);
as shown in fig. 5, it can be seen from fig. 5 that the optimal device efficiency can be obtained by adjusting the concentrations of the CQD quantum dots, the lead iodide and the zinc acetate;
performing external quantum efficiency test on the solar cell prepared in the embodiment 3, and measuring and obtaining the solar cell by an external quantum efficiency test system of beijing zhulihan optical instrument ltd (calibrated by a standard silicon and a standard indium gallium arsenic detector);
as shown in FIG. 6, it can be seen from FIG. 6 that the integrated current obtained from the external quantum efficiency of the solar cell prepared in example 3 was 24.28mA/cm2Consistent with the current flow in fig. 5.
The cell performance parameters of the solar cells prepared in examples 1 to 3 and comparative example 1 are shown in table 1:
TABLE 1 Performance parameters of solar cells prepared in examples 1-3 and comparative example 1
As can be seen from table 1, the short-circuit current of the solar cells prepared in examples 1 to 3 is significantly improved as compared to comparative example 1.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A preparation method of a PbS quantum dot light absorption layer is characterized by comprising the following steps:
mixing PbO, oleic acid and octadecene, introducing nitrogen, and carrying out first heating to obtain a lead precursor;
mixing the lead precursor and hexamethyldisilazane solution to perform nucleation growth reaction, and adding acetone to remove supernatant to obtain PbS colloidal quantum dots;
mixing the PbS colloidal quantum dots, n-hexane and acetone, performing first centrifugation, removing supernatant, adding n-hexane, performing second centrifugation, drying, and mixing with n-octane to obtain an oleic acid-coated PbS colloidal quantum dot solution;
mixing lead iodide, zinc acetate and dimethylformamide, then mixing with the PbS colloidal quantum dot solution coated by oleic acid, standing, removing supernatant, adding n-octane, removing supernatant, adding toluene, and centrifuging to obtain colloidal quantum dots;
mixing the mixed solution of butylamine and dimethylformamide with the colloidal quantum dots to obtain colloidal quantum dot ink;
and coating the colloid quantum dot ink on the surface of a substrate, and heating for the second time to obtain the PbS quantum dot light absorption layer.
2. The method according to claim 1, wherein the mass of PbO, the volume of oleic acid and the volume ratio of octadecene is (0.4-0.5) g: (6-10) mL: (16-20) mL;
the volume ratio of the mass of PbO to the hexamethyldisilazane solution is (0.4-0.5) g: (0.20-0.24) mL.
3. The method according to claim 1, wherein the temperature of the mixture of PbO, oleic acid and octadecene is 110 to 130 ℃ and the time is 25 to 35 min;
the temperature of the nucleation growth reaction is 90-100 ℃.
4. The method of claim 1, wherein the first centrifugation and the second centrifugation are independently at 8000 to 10000rpm for 3 to 8 min.
5. The method of claim 1, wherein the concentration of the oleic acid-coated PbS colloidal quantum dots in the oleic acid-coated PbS colloidal quantum dot solution is 6-50 mg/mL.
6. The preparation method of claim 1, wherein the concentration of the colloidal quantum dot ink is 250-350 mg/mL.
7. The method according to claim 1, wherein the second heating temperature is 75 to 85 ℃ and the second heating time is 8 to 12 min.
8. The PbS quantum dot light absorption layer prepared by the preparation method of any one of claims 1 to 7, wherein the PbS quantum dot light absorption layer is made of PbS quantum dots modified by lead iodide and zinc acetate.
9. Use of the PbS quantum dot photoabsorption layer of claim 8 in a solar cell.
10. The solar cell is characterized by comprising conductive glass, an electron transport layer, a PbS quantum dot light absorption layer, a hole transport layer and a metal electrode which are sequentially stacked;
the PbS quantum dot light absorption layer is prepared by the preparation method of any one of claims 1 to 7.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112786794A (en) * | 2020-12-31 | 2021-05-11 | 北京建筑大学 | Lead sulfide quantum dot solar cell and preparation method thereof |
| CN113502085A (en) * | 2021-04-11 | 2021-10-15 | 苏州大学 | Lead sulfide colloidal quantum dot ink, preparation method and application in printable solar cell |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101952372A (en) * | 2007-12-21 | 2011-01-19 | 3M创新有限公司 | Process for producing nanoparticles |
| CN102110736A (en) * | 2010-11-09 | 2011-06-29 | 北京理工大学 | Colloid quantum dot-based infrared photoelectric detector and manufacturing method thereof |
| CN102473800A (en) * | 2009-07-07 | 2012-05-23 | 佛罗里达大学研究基金会公司 | Stable and all solution processable quantum dot light-emitting diodes |
| CN104388089A (en) * | 2014-11-04 | 2015-03-04 | 北京理工大学 | High-fluorescence-quantum-yield hybridized perovskite quantum dot material and preparation method thereof |
| CN104576929A (en) * | 2014-11-26 | 2015-04-29 | 华北电力大学 | Perovskite-lead sulfide quantum dot stacked solar cell and preparation method thereof |
| US9099663B1 (en) * | 2014-04-21 | 2015-08-04 | Massachusetts Institute Of Technology | Quantum dot solar cells with band alignment engineering |
| CN105161562A (en) * | 2015-09-15 | 2015-12-16 | 华南理工大学 | PbS quantum dot heterojunction solar cell employing solvent regulation and control and preparation method of PbS quantum-dot heterojunction solar cell |
| CN107636431A (en) * | 2015-06-11 | 2018-01-26 | 佛罗里达大学研究基金会有限公司 | Single dispersing IR absorbs nano particle and associated method and device |
| CN109065727A (en) * | 2018-07-24 | 2018-12-21 | 北京科技大学 | A kind of preparation method of perovskite solar battery |
| CN109545943A (en) * | 2018-09-27 | 2019-03-29 | 纳晶科技股份有限公司 | The manufacturing process and illuminating part of illuminating part |
| CN110176541A (en) * | 2019-06-09 | 2019-08-27 | 苏州大学 | A kind of vulcanized lead Colloidal Quantum Dots solar battery and preparation method based on convection current assembling sedimentation |
| CN110452681A (en) * | 2018-05-08 | 2019-11-15 | Tcl集团股份有限公司 | Quantum dot solution and preparation method thereof |
| US20200048543A1 (en) * | 2016-10-28 | 2020-02-13 | Council Of Scientific & Industrial Research | A process for the synthesis of air stable metal sulphide quantum dots |
| CN111378442A (en) * | 2018-12-29 | 2020-07-07 | Tcl集团股份有限公司 | Composite material and preparation method thereof |
-
2020
- 2020-09-25 CN CN202011021951.9A patent/CN112151681B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101952372A (en) * | 2007-12-21 | 2011-01-19 | 3M创新有限公司 | Process for producing nanoparticles |
| CN102473800A (en) * | 2009-07-07 | 2012-05-23 | 佛罗里达大学研究基金会公司 | Stable and all solution processable quantum dot light-emitting diodes |
| CN102110736A (en) * | 2010-11-09 | 2011-06-29 | 北京理工大学 | Colloid quantum dot-based infrared photoelectric detector and manufacturing method thereof |
| US9099663B1 (en) * | 2014-04-21 | 2015-08-04 | Massachusetts Institute Of Technology | Quantum dot solar cells with band alignment engineering |
| CN104388089A (en) * | 2014-11-04 | 2015-03-04 | 北京理工大学 | High-fluorescence-quantum-yield hybridized perovskite quantum dot material and preparation method thereof |
| CN104576929A (en) * | 2014-11-26 | 2015-04-29 | 华北电力大学 | Perovskite-lead sulfide quantum dot stacked solar cell and preparation method thereof |
| CN107636431A (en) * | 2015-06-11 | 2018-01-26 | 佛罗里达大学研究基金会有限公司 | Single dispersing IR absorbs nano particle and associated method and device |
| CN105161562A (en) * | 2015-09-15 | 2015-12-16 | 华南理工大学 | PbS quantum dot heterojunction solar cell employing solvent regulation and control and preparation method of PbS quantum-dot heterojunction solar cell |
| US20200048543A1 (en) * | 2016-10-28 | 2020-02-13 | Council Of Scientific & Industrial Research | A process for the synthesis of air stable metal sulphide quantum dots |
| CN110452681A (en) * | 2018-05-08 | 2019-11-15 | Tcl集团股份有限公司 | Quantum dot solution and preparation method thereof |
| CN109065727A (en) * | 2018-07-24 | 2018-12-21 | 北京科技大学 | A kind of preparation method of perovskite solar battery |
| CN109545943A (en) * | 2018-09-27 | 2019-03-29 | 纳晶科技股份有限公司 | The manufacturing process and illuminating part of illuminating part |
| CN111378442A (en) * | 2018-12-29 | 2020-07-07 | Tcl集团股份有限公司 | Composite material and preparation method thereof |
| CN110176541A (en) * | 2019-06-09 | 2019-08-27 | 苏州大学 | A kind of vulcanized lead Colloidal Quantum Dots solar battery and preparation method based on convection current assembling sedimentation |
Non-Patent Citations (3)
| Title |
|---|
| 王莹琳、王垒、安美琪、李金环、张昕彤: "《基于缺陷态调控的PbS量子点太阳能电池性能优化研究》", 《第六届新型太阳能电池材料科学与技术学术研讨会论文集》 * |
| 邢美波、魏玉瑶、王瑞祥: "《ZnO/PbS异质结量子点太阳能电池的界面修饰及稳定性研究》", 《化工学报》 * |
| 高文辉、翟光美、张彩峰、邵智猛、郑露露、张勇、李学敏、许并社: "《表面配体和器件结构对PbS胶体量子点电池性能的影响》", 《发光学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112786794A (en) * | 2020-12-31 | 2021-05-11 | 北京建筑大学 | Lead sulfide quantum dot solar cell and preparation method thereof |
| CN113502085A (en) * | 2021-04-11 | 2021-10-15 | 苏州大学 | Lead sulfide colloidal quantum dot ink, preparation method and application in printable solar cell |
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