CN112133669A - Semiconductor chamber and semiconductor equipment - Google Patents
Semiconductor chamber and semiconductor equipment Download PDFInfo
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- CN112133669A CN112133669A CN202010906130.7A CN202010906130A CN112133669A CN 112133669 A CN112133669 A CN 112133669A CN 202010906130 A CN202010906130 A CN 202010906130A CN 112133669 A CN112133669 A CN 112133669A
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- semiconductor chamber
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 77
- 238000005530 etching Methods 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 12
- 230000012010 growth Effects 0.000 claims description 20
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 59
- 230000000694 effects Effects 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000009423 ventilation Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a semiconductor chamber and semiconductor equipment, wherein the semiconductor chamber comprises a shell (100), a preheating assembly (200) and a base (300), wherein the preheating assembly (200) and the base (300) are arranged in the shell (100), the base (300) is used for bearing a workpiece (700) to be processed and can be lifted, and the preheating assembly (200) is arranged around the base (300) and is used for preheating the semiconductor chamber; wherein, the preheating assembly (200) is provided with a vent hole (212), when the base (300) is positioned at the process position, the opening of the vent hole (212) facing the base (300) is lower than the bearing surface of the base (300), and the vent hole (212) is used for leading etching gas to be input below the bearing surface and to be input above the bearing surface along the gap between the preheating assembly (200) and the base (300). The above embodiments can solve the problem of over-etching the central region of the susceptor bearing surface.
Description
Technical Field
The invention relates to the technical field of epitaxial wafer manufacturing, in particular to a semiconductor chamber and semiconductor equipment.
Background
The epitaxial wafer is a wafer in which an epitaxial layer is vapor-grown on the surface of a semiconductor wafer. In the related art, a silicon layer is produced on a wafer by reducing hydrogen gas by introducing trichlorosilane into a semiconductor chamber of a semiconductor device.
However, during the production of epitaxial wafers, other components within the semiconductor chamber may also have a silicon layer deposited thereon, and thus, this portion of the silicon layer may need to be etched. The central area of the bearing surface of the base is provided with a wafer to wait for a workpiece, so that the silicon layer deposited in the central area of the base is thin, the edge of the base is exposed, the deposited silicon layer is thick, when the semiconductor cavity is etched by introducing etching gas, the central area of the bearing surface of the base is easily over-etched, and thus the base generates pinholes, and the quality of an epitaxial layer of the workpiece to be processed is influenced when the workpiece to be processed is epitaxially grown subsequently.
Disclosure of Invention
The invention discloses a semiconductor cavity and semiconductor equipment, which aim to solve the problem that the central area of a bearing surface of a base is excessively etched.
In order to solve the problems, the invention adopts the following technical scheme:
a semiconductor cavity comprises a shell, a preheating assembly and a base, wherein the preheating assembly and the base are arranged in the shell, the base is used for bearing a workpiece to be machined and can be lifted, and the preheating assembly is arranged around the base and is used for preheating the semiconductor cavity;
when the base is located at the process position, the opening of the vent hole facing the base is lower than the bearing surface of the base, and the vent hole is used for enabling etching gas to be input below the bearing surface and to be input above the bearing surface along a gap between the preheating assembly and the base.
A semiconductor device comprises the reaction chamber.
The technical scheme adopted by the invention can achieve the following beneficial effects:
in the semiconductor cavity disclosed by the invention, the base is used for bearing a workpiece to be processed, the base can be lifted in the shell, the preheating assembly is arranged around the base, and the preheating assembly is used for preheating the semiconductor cavity. The preheating assembly is provided with a vent hole, when the base is positioned at the process position, the opening of the vent hole facing the base is lower than the bearing surface of the base, so that etching gas entering the preheating assembly through the vent hole flows partially along the lower part of the bearing surface of the base, and the partial etching gas can strengthen the etching effect on the lower part of the bearing surface; the other part is input above the bearing surface along the gap between the preheating assembly and the base, and the etching gas can strengthen the etching effect on the edge of the bearing surface, so that the flow of the etching gas input to the central area of the bearing surface of the base is reduced, the central area of the bearing surface is not easy to be excessively etched, the base is not easy to release impurities, the cleanliness of a semiconductor can be improved, and the production quality of an epitaxial layer of a workpiece to be processed can be improved when the epitaxial growth of the workpiece to be processed is carried out.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a cross-sectional view of a semiconductor chamber according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a preheating assembly in a semiconductor chamber according to an embodiment of the disclosure;
FIG. 3 is a side view of a preheat assembly in a semiconductor chamber, according to an embodiment of the present disclosure;
FIG. 4 is a cross-sectional view of a pre-heat assembly in a semiconductor chamber according to an embodiment of the present disclosure;
FIG. 5 is a schematic view of a susceptor in a semiconductor chamber according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of another semiconductor chamber according to an embodiment of the disclosure.
Description of reference numerals:
100-shell, 110-upper arch, 120-lower arch, 130-metal shell, 131-air inlet block;
200-preheating component, 210-lower annular part, 212-vent hole, 213-positioning groove, 214-flow guide part and 220-upper annular part;
300-base, 310-containing groove, 311-vent hole, 312-thimble hole;
400-support part, 410-positioning projection;
510-growth gas channel, 511-first subchannel, 512-second subchannel, 520-etching gas channel, 521-third subchannel, 522-fourth subchannel;
600-a drive shaft;
700-treating the workpiece.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical solutions disclosed in the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1 to 6, the embodiment of the present invention discloses a semiconductor chamber including a housing 100, a preheating assembly 200 disposed in the housing 100, and a susceptor 300, the preheating assembly 200 being disposed around the susceptor 300.
The housing 100 is a body component of the semiconductor chamber, and the housing 100 provides a mounting base for other assembly components of the semiconductor chamber. A workpiece 700, such as a wafer, is processed within the housing 100. Specifically, the housing 100 may include an upper dome portion (upper dome portion) 110, a lower dome portion (lower dome portion) 120, and a metal housing portion 130, and the upper dome portion 110 and the lower dome portion 120 are respectively connected to the metal housing portion 130 through connection flanges.
The pre-heating assembly 200 can pre-heat the semiconductor chamber so that the workpiece to be processed has better thermal uniformity to improve uniformity of the epitaxial layer of the workpiece 700 to be processed. The preheating of the semiconductor chamber includes preheating the susceptor 300, the workpiece 700, and the reaction gas introduced into the semiconductor chamber. The reaction gas comprises a growth gas and an etching gas, and the growth gas mainly comprises hydrogen, a silicon source gas and a doping gas source. The etching gas is mainly hydrogen chloride gas. Growth gas may be introduced during the epitaxial layer growth phase, so that an epitaxial layer may be formed on the workpiece 700. When the epitaxial layer is grown on the workpiece 700, a silicon layer is deposited on other parts in the semiconductor chamber, so that etching gas needs to be introduced for etching.
The base 300 is used for bearing the workpiece 700 to be processed, and the base 300 can be lifted. Specifically, the base 300 is connected to the driving shaft 600, and the driving shaft 600 drives the base 300 to move along the axial direction of the driving shaft 600, so that the base 300 can be lifted in the housing 100. The susceptor 300 is coaxially disposed with the preheating assembly 200, that is, the central axis of the preheating assembly 200 coincides with the central axis of the susceptor 300. Optionally, the semiconductor chamber may further include a driving source, which may be disposed outside the housing 100 and connected to the driving shaft 600, and the driving source may drive the susceptor 300 to move up and down through the driving shaft 600. The driving source may be a hydraulic cylinder, a driving motor, or other power structures, which is not limited herein. Since the driving shaft 600 is partially located in the case 100, a silicon layer is also deposited on the driving shaft 600.
As shown in fig. 1, a supporting portion 400 is located in the housing 100, and the supporting portion 400 is used for carrying the preheating assembly 200. The pre-heat assembly 200 defines a vent 212, wherein when the pedestal 300 is in the processing position, the opening of the vent 212 facing the pedestal 300 is lower than the bearing surface of the pedestal 300, and the vent 212 is configured to allow an etching gas to be introduced below the bearing surface and above the bearing surface along the gap between the pre-heat assembly 200 and the pedestal 300. Alternatively, the number of the vent holes 212 may be 8, the diameter of the vent holes 212 may be 4mm to 6mm, and the opening of the vent holes 212 to the susceptor 300 may be between 1mm to 2mm lower than the carrying surface of the susceptor 300. The pre-heating assembly 200 and the susceptor 300 may be made of graphite material, and the number of the vent holes 212 may be selected according to actual conditions, which is not limited herein.
Optionally, the angle between the axis of the vent hole 212 and the axis of the preheating assembly 200 is equal to 90 °, that is, the vent hole 212 opens horizontally. Alternatively, the axis of the vent 212 may be at an angle less than 90 ° or greater than 90 ° to the axis of the preheat assembly 200, i.e., the vent 212 is inclined.
In a specific operation, when the member 700 to be processed needs to be processed, the driving shaft 600 drives the base 300 to ascend and descend, thereby driving the base 300 to the process position. The process site may perform a growth process and an etching process of the member to be processed 700.
In the embodiment of the present invention, the preheating assembly 200 is disposed around the susceptor 300, the preheating assembly 200 can divide the etching gas introduced into the semiconductor chamber, a portion of the etching gas enters the preheating assembly 200 through the vent 212, and another portion of the etching gas enters the preheating assembly 200 through the top end of the preheating assembly 200. When the susceptor 300 is in the processing position, since the opening of the vent 212 facing the susceptor 300 is lower than the supporting surface of the susceptor 300, a portion of the etching gas entering the pre-heat assembly 200 through the vent 212 flows along the lower portion of the supporting surface of the susceptor 300, and the etching gas can enhance the etching effect on the lower portion of the supporting surface; the other part is input above the bearing surface along the gap between the preheating assembly 200 and the susceptor 300, and the etching gas can strengthen the etching effect on the edge of the bearing surface, so that the flow of the etching gas input to the central area of the bearing surface of the susceptor 300 is reduced, the central area of the bearing surface is not easily over-etched, the susceptor 300 is not easily released with impurities, and the cleanliness of a semiconductor can be improved, therefore, the production quality of the epitaxial layer of the workpiece 700 to be processed can be improved when the workpiece 700 to be processed is epitaxially grown.
In addition, since the flow rates of the etching gas under the bearing surface of the susceptor 300 and at the edge of the bearing surface of the susceptor 300 are increased, the etching effects of the etching gas under the bearing surface of the susceptor 300 and at the edge of the bearing surface can be improved, and the etching effect of the semiconductor chamber can be improved.
In the above embodiment, the preheating assembly 200 is impacted by the reaction gas in the semiconductor chamber, which easily causes the position of the preheating assembly 200 to shift, and causes the uniformity within and between the wafers to change. For this, in another alternative embodiment, one of the bottom end of the preheating assembly 200 and the top end of the supporting portion 400 may be provided with a positioning groove 213, the other may be provided with a positioning protrusion 410, at least a portion of the positioning protrusion 410 is located in the positioning groove 213, and the positioning protrusion 410 and the positioning groove 213 may be matched with each other to achieve positioning. In this scheme, the positioning protrusions 410 and the positioning grooves 213 can limit the preheating assembly 200 from sliding relative to the supporting portion 400, thereby preventing the uniformity within and between the sheets from changing and improving the process stability.
In addition, the positioning protrusion 410 can be directly inserted into the positioning groove 213, thereby making the positioning simple and reliable. The positioning protrusion 410 and the positioning groove 213 are easy to process, so that the semiconductor cavity is convenient to manufacture and low in cost.
Further, the number of the positioning protrusions 410 may be multiple, the number of the positioning grooves 213 may also be multiple, the plurality of positioning grooves 213 and the plurality of positioning protrusions 410 are all arranged around the preheating assembly 200 at intervals in the circumferential direction, and the positioning protrusions 410 are in one-to-one correspondence with the positioning grooves 213. In this embodiment, the positioning protrusions 410 and the positioning grooves 213 are used to position the preheating assembly 200, so as to further reduce the possibility of relative sliding between the preheating assembly 200 and the supporting portion 400. In addition, the positioning method can also improve the positioning precision between the preheating assembly 200 and the base 300 so as to improve the uniformity among the pieces of the workpiece 700 to be processed.
Alternatively, the positioning groove 213 may be disposed at the bottom end of the preheating assembly 200, and the diameter of the positioning groove 213 may be 5mm and the depth thereof may be 6 mm. The positioning protrusion 410 may be disposed on the top end of the support portion 400, the height of the positioning protrusion 410 is 5mm, the height is 4mm, at this time, the size of the positioning protrusion 410 is slightly smaller than the size of the positioning groove 213, and the positioning protrusion 410 may be easily inserted into the positioning groove 213, so that the positioning groove 213 is not interfered with the positioning protrusion 410 when being matched with the positioning protrusion 410, thereby improving the reliability of the assembly of the positioning protrusion 410 and the positioning groove 213. It should be noted that, when the size difference between the positioning groove 213 and the positioning protrusion 410 is large, the positioning effect between the positioning protrusion 410 and the positioning groove 213 is likely to be reduced, so that the sizes of the positioning protrusion 410 and the positioning groove 213 only need to satisfy the assembly condition, and the difference is not likely to be too large.
Alternatively, the preheating assembly 200 may be directly disposed on the lower arc portion 120 of the housing 100, that is, the lower arc portion 120 serves as the supporting portion 400, but the difficulty of disposing the preheating assembly 200 on the lower arc portion 120 is high due to the processing and manufacturing requirements of the semiconductor chamber, and for this reason, the supporting portion 400 may be additionally disposed to support the preheating assembly 200, that is, the supporting portion 400 is disposed on the lower arc portion 120, and the preheating assembly 200 is disposed on the supporting portion 400. Wherein, the supporting portion 400 is made of quartz material, the supporting portion 400 is an annular structural member, and the central axis of the supporting portion 400 is axially overlapped with the central axis of the preheating assembly 200.
To further enhance the preheating effect of the preheating assembly 200, in another alternative embodiment, the preheating assembly 200 may include a lower annular portion 210 and an upper annular portion 220, the upper annular portion 220 extending radially inward along a top portion of the lower annular portion 210, the vent 212 may open into the lower annular portion 210, and the load-bearing surface of the susceptor 300 may be located between the opening of the vent 212 toward the susceptor 300 and the upper annular portion 220 when the susceptor 300 is in the processing position. The preheating assembly 200 with the structure forms a surrounding structure, so that a relatively stable and independent accommodating space is formed inside the preheating assembly 200, a thermal field formed inside the preheating assembly 200 is more stable and uniform, and the preheating effect of the preheating assembly 200 on the base 300 and the workpiece 700 to be machined is better.
Alternatively, the lower ring portion 210 and the upper ring portion 220 may be integrally formed, and other connecting methods may be adopted, which is not limited herein.
In another alternative embodiment, the inner diameter of the upper annular portion 220 may be smaller than the outer diameter of the base 300. That is, the inner side edge of the upper ring part 220 may cover the outer side edge of the base 300. In this embodiment, after the etching gas enters the vent hole 212, a part of the etching gas is input above the bearing surface along the gap between the lower annular portion 210 and the susceptor 300, and after the part of the etching gas contacts the upper annular portion 220, the part of the etching gas flows along the inner sidewall of the upper annular portion 220, so that the etching gas can be guided to the edge of the susceptor 300, thereby improving the etching performance of the edge of the susceptor 300. Meanwhile, the flow of the growth gas input to the edge of the susceptor 300 can be reduced, and the deposition of a thicker film on the edge of the susceptor 300 can be avoided.
In an alternative embodiment, the outer sidewall of the lower end of the ventilation hole 212 of the lower annular portion 210 is surrounded by a flow guide portion 214, and the outer diameter of the flow guide portion 214 is gradually increased in the direction from the ventilation hole 212 to the bottom end of the lower annular portion 210. In this scheme, the guiding portion 214 can guide the etching gas to the vent hole 212, so that the flow rate of the etching gas entering the vent hole 212 can be increased, and the etching performance of the semiconductor chamber can be improved. In addition, in the direction from the vent hole 212 to the bottom end of the lower annular portion 210, the outer diameter of the flow guiding portion 214 is gradually increased, that is, the cross-sectional area of the flow guiding portion 214 is gradually increased, the gathering effect of the flow guiding portion 214 is better, and the flow guiding effect of the flow guiding portion 214 is further improved. Alternatively, the flow guide portion 214 may be a part of the outer side surface of the lower annular portion 210, thereby making the structure of the preheating assembly 200 simple and compact.
Alternatively, the distance between the inner diameter of the upper ring part 220 and the outer diameter of the upper ring part 220 may be 20mm to 25mm, and the outer sidewall of the upper ring part 220 may be flush with the outer sidewall of the lower ring part 210. The inner diameter of the upper ring part 220 is smaller than the outer diameter of the base 300 by a size of between 5mm and 10mm, that is, the inner side edge of the upper ring part 220 covers the outer edge of the base 300 by a distance of between 5mm and 10 mm. Of course, the inner diameter of the upper ring 220 may be smaller than the outer diameter of the base 300 in other ranges, which is not limited herein.
In the above embodiment, the etching effect of the center region of the bearing surface and the edge of the susceptor 300 can be adjusted by adjusting the difference between the inner diameter of the upper annular portion 220 and the outer diameter of the susceptor 300. In practice, the outer diameter of the base 300 is fixed, so the above effect can be achieved by adjusting the inner diameter of the upper ring part 200.
Further, the distance from the top end of the lower ring portion 210 to the bottom end of the lower ring portion 210 may be greater than the distance from the top end of the upper ring portion 220 to the bottom end of the upper ring portion 220. At this time, the distance from the top end of the lower ring portion 210 to the bottom end of the lower ring portion 210 is the height of the lower ring portion 210, and the distance from the top end of the upper ring portion 220 to the bottom end of the upper ring portion 220 is the height of the upper ring portion 220. In this aspect, the height of the lower annular portion 210 is greater than the height of the upper annular portion 220, so that the preheating assembly 200 has a larger inner space without changing the overall height of the preheating assembly 200, thereby allowing the preheating assembly 200 to have a larger process window. Alternatively, the distance from the top end of the lower ring part 210 to the bottom end of the lower ring part 210 may be 15mm to 18mm, and the distance from the top end of the upper ring part 220 to the top end of the upper ring part 220 may be 4mm to 6 mm.
Further, the distance between the outer diameter of the lower annular portion 210 and the inner diameter of the lower annular portion 210 may be greater than the distance between the top end of the upper annular portion 220 and the bottom end of the upper annular portion 220, so that the wall thickness of the lower annular portion 210 is greater, and the upper annular portion 210 is better supported, and the overall strength of the preheating assembly 200 can be improved. Alternatively, the distance between the outer diameter of the lower annular portion 210 and the inner diameter of the lower annular portion 210 may be between 6mm and 8 mm.
In another alternative embodiment, the surface of the base 300 facing the upper annular portion 220 may be provided with a receiving groove 310, and the member to be machined 700 may be located in the receiving groove 310. In this embodiment, the to-be-processed member 700 may be accommodated in the accommodating recess 310, and the to-be-processed member 700 is not exposed on the surface of the base 300, so that the to-be-processed member 700 is not easily pushed by the lateral airflow to slide, thereby further improving the uniformity of the to-be-processed member 700 within and between sheets, and further improving the yield of the to-be-processed member 700.
Further, the bottom of the receiving groove 310 may be formed with a plurality of exhaust holes 311 penetrating the bottom of the groove, and the exhaust holes 311 are disposed opposite to the member to be machined 700. When the workpiece 700 to be machined is placed into the accommodating groove 310, the workpiece 700 to be machined can press out the gas in the accommodating groove 310 through the vent holes 311, so that the pressure between the workpiece 700 to be machined and the bottom wall of the accommodating groove 310 is reduced, the pressure in the preheating assembly 200 is higher, and the friction between the accommodating groove 310 and the workpiece 700 to be machined is increased, so that the workpiece 700 to be machined is not easy to slide laterally, and the uniformity of the workpiece 700 to be machined in the sheet and among the sheets is improved.
Optionally, the number of the exhaust holes 311 may be 20 to 30, and the diameter of the exhaust holes 311 may be 5mm to 7 mm. Of course, the number of the vent holes 311 may also take other values, and the diameter of the vent holes 311 may also take other values, which is not limited herein.
In another alternative embodiment, the bottom of the accommodating groove 310 is provided with an ejector pin hole 312, and when the workpiece 700 to be processed is completed, the ejector pin can penetrate through the ejector pin hole 312 to eject the workpiece 700 to be processed, so that the robot can conveniently grab the workpiece 700 to be processed.
In another embodiment, the housing 100 includes a gas inlet block 131, and the gas inlet block 131 is used to introduce a reaction gas into the semiconductor chamber. The height of the air inlet block 131 may be lower than the height of the top end of the preheating assembly 200 and higher than the height of the vent hole 212. At this time, the gas inlet block 131 is located between the top end of the preheating assembly 200 and the vent hole 212, so that the distance between the top end of the preheating assembly 200 and the gas inlet block 131 and the distance between the vent hole 212 and the gas inlet block 131 are not greatly different, and thus most of the reaction gas with light weight can easily climb to the top end of the preheating assembly 200, and the flow rate of the reaction gas on the upper portion of the preheating assembly 200 is not easily affected.
Further, the gas inlet block 131 inputs the growth gas and the etching gas into the semiconductor chamber through the growth gas channel 510 and the etching gas channel 520, respectively, the growth gas channel 510 may face the pre-heating assembly 200, and the etching gas channel 520 may face the edge of the semiconductor chamber. That is, the growth gas enters the semiconductor chamber in the horizontal direction, hydrogen is mixed in the growth gas, and the hydrogen is light, so that most of the growth gas easily ascends above the semiconductor chamber, and a small part of the growth gas enters the semiconductor chamber through the vent hole 212, and the growth gas ascended above the semiconductor chamber forms mixed flow above the base 300, thereby improving the film formation quality of the workpiece 700.
The venting direction of the etching gas channel 520 is towards the edge of the semiconductor chamber. In other words, the etching gas diffuses towards the center of the semiconductor chamber along the edge of the semiconductor chamber, and in the scheme, the etching gas can etch the inner side wall of the semiconductor chamber, so that the etching performance of the semiconductor chamber is improved. Meanwhile, a large portion of the etching gas having a relatively heavy mass may enter the inside of the pre-heat assembly 200 through the vent holes 212, so that the lower portion of the carrying surface of the susceptor 300 and the edge of the susceptor 300 may be sufficiently etched.
In a specific embodiment, the growth gas channel 510 may include a first sub-channel 511 and a second sub-channel 512, the etching gas channel 520 may include a third sub-channel 521 and a fourth sub-channel 522, the first sub-channel 511 and the second sub-channel 512 may be located between the third sub-channel 521 and the fourth sub-channel 522, an axial direction of the first sub-channel 511 is parallel to an axial direction of the second sub-channel 512, that is, a ventilation direction of the first sub-channel 511 is the same as a ventilation direction of the second sub-channel 512. The axis of the third sub-passage 521 intersects the axis of the fourth sub-passage 522, and the ventilation direction of the third sub-passage 521 intersects the ventilation direction of the fourth sub-passage 522. In the scheme, the semiconductor cavity adopts a two-way four-area ventilation structure, so that the etching rate of the semiconductor cavity can be improved, and the growth rate and uniformity of the epitaxial layer of the workpiece 700 to be processed can be improved.
Based on the semiconductor chamber of any of the above embodiments of the present invention, an embodiment of the present invention further discloses a semiconductor device, and the disclosed semiconductor device has the semiconductor chamber disclosed in any of the above embodiments.
In the above embodiments of the present invention, the difference between the embodiments is mainly described, and different optimization features between the embodiments can be combined to form a better embodiment as long as they are not contradictory, and further description is omitted here in view of brevity of the text.
The above description is only an example of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (11)
1. The semiconductor chamber is characterized by comprising a shell (100), a preheating assembly (200) and a base (300), wherein the preheating assembly (200) is arranged in the shell (100), the base (300) is used for bearing a workpiece (700) to be processed and can be lifted, and the preheating assembly (200) is arranged around the base (300) and is used for preheating the semiconductor chamber;
wherein, the preheating assembly (200) is provided with a vent hole (212), when the base (300) is positioned at the process position, the opening of the vent hole (212) facing the base (300) is lower than the bearing surface of the base (300), and the vent hole (212) is used for leading etching gas to be input below the bearing surface and to be input above the bearing surface along the gap between the preheating assembly (200) and the base (300).
2. The semiconductor chamber of claim 1, further comprising a support part (400), wherein the support part (400) is disposed in the housing (100), the support part (400) is used for supporting the preheating assembly (200), one of a bottom end of the preheating assembly (200) and a top end of the support part (400) is provided with a positioning groove (213), the other one is provided with a positioning protrusion (410), at least a portion of the positioning protrusion (410) is located in the positioning groove (213), and the positioning protrusion (410) and the positioning groove (213) are matched with each other to realize positioning.
3. The semiconductor chamber according to claim 2, wherein the number of the positioning protrusions (410) is multiple, the number of the positioning grooves (213) is multiple, the positioning grooves (213) and the positioning protrusions (410) are all arranged around the preheating assembly (200) at intervals in the circumferential direction, and the positioning protrusions (410) correspond to the positioning grooves (213) one to one.
4. The semiconductor chamber of claim 1, wherein the preheat assembly (200) comprises a lower annular portion (210) and an upper annular portion (220), the upper annular portion (220) extending radially inward along a top of the lower annular portion (210), the vent (212) opening into the lower annular portion (210), a load bearing surface of the susceptor (300) being located between an opening of the vent (212) toward the susceptor (300) and the upper annular portion (220) when the susceptor (300) is in a process position.
5. The semiconductor chamber of claim 4, wherein an inner diameter of the upper annular portion (220) is less than an outer diameter of the pedestal (300).
6. The semiconductor chamber of claim 4, wherein the outer sidewall of the lower end of the vent hole (212) of the lower annular portion (210) is surrounded by a flow guide portion (214), and the outer diameter of the flow guide portion (214) is gradually increased in a direction from the vent hole (212) to the bottom end of the lower annular portion (210).
7. The semiconductor chamber of claim 4, wherein a distance between a top end of the lower annular portion (210) to a bottom end of the lower annular portion (210) is greater than a distance between a top end of the upper annular portion (220) to a bottom end of the upper annular portion (220); and/or the presence of a gas in the gas,
the distance between the outer diameter of the lower annular portion (210) and the inner diameter of the lower annular portion (210) is greater than the distance between the top end of the upper annular portion (220) and the bottom end of the upper annular portion (220).
8. The semiconductor chamber according to claim 4, wherein a surface of the base (300) facing the upper annular portion (220) is formed with a receiving groove (310), the workpiece (700) is located in the receiving groove (310), a bottom of the receiving groove (310) is formed with a plurality of exhaust holes (311) penetrating through the bottom of the groove, and the exhaust holes (311) are disposed opposite to the workpiece (700).
9. The semiconductor chamber according to any one of claims 1 to 8, wherein the housing (100) comprises an air inlet block (131), the air inlet block (131) having a height lower than a height of a top end of the pre-heat assembly (200) and higher than a height of the vent hole (212); the gas inlet block (131) inputs growth gas and etching gas to the semiconductor chamber through a growth gas channel (510) and an etching gas channel (520), the growth gas channel (510) faces the preheating assembly (200), and the etching gas channel (520) faces the edge of the semiconductor chamber.
10. The semiconductor chamber of claim 9, wherein the growth gas channel (510) comprises a first sub-channel (511) and a second sub-channel (512), the etching gas channel (520) comprises a third sub-channel (521) and a fourth sub-channel (522), the first sub-channel (511) and the second sub-channel (512) are located between the third sub-channel (521) and the fourth sub-channel (522), an axis of the first sub-channel (511) is parallel to an axis of the second sub-channel (512), and an axis of the third sub-channel (521) intersects an axis of the fourth sub-channel (522).
11. A semiconductor device comprising the semiconductor chamber of any one of claims 1 to 10.
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| CN115404543A (en) * | 2022-08-31 | 2022-11-29 | 北京北方华创微电子装备有限公司 | Process chamber of epitaxial growth equipment and epitaxial growth equipment |
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| CN112133669B (en) | 2024-03-26 |
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