CN112113449B

CN112113449B - Vapor chamber, method for manufacturing vapor chamber, electronic device, and electronic apparatus

Info

Publication number: CN112113449B
Application number: CN202010922812.7A
Authority: CN
Inventors: 黄猛; 张涛
Original assignee: Guangdong Oppo Mobile Telecommunications Corp Ltd
Current assignee: Guangdong Oppo Mobile Telecommunications Corp Ltd
Priority date: 2020-09-04
Filing date: 2020-09-04
Publication date: 2022-05-20
Anticipated expiration: 2040-09-04
Also published as: CN112113449A

Abstract

The application discloses a vapor chamber, a manufacturing method of the vapor chamber, an electronic device and an electronic apparatus. The soaking plate comprises an aluminum substrate and a capillary structure; a cavity is formed in the aluminum substrate, and the capillary structure is arranged in the cavity; the aluminum substrate has a grain size larger than 20um and a thermal conductivity larger than 240W/(m × K). Therefore, the aluminum is adopted as the substrate of the soaking plate, the aluminum substrate has good processing performance, the processing technology is simple, the cost is low, the processing cost and the material cost of the soaking plate can be saved, and the yield of products is improved. Meanwhile, the aluminum substrate has lower density, the weight of the soaking plate can be reduced, so that the electronic product is lighter, the grain size of the aluminum substrate is larger than 20um, and the thermal conductivity is larger than 240W/(m × K), so that the soaking plate has better heat dissipation capacity. Thus, the vapor chamber of the embodiment of the present application can reduce the cost and the weight of the vapor chamber while ensuring the heat dissipation efficiency.

Description

Vapor chamber, method for manufacturing vapor chamber, electronic device, and electronic apparatus

Technical Field

The present disclosure relates to the field of electronic devices, and particularly to a vapor chamber, a method for manufacturing a vapor chamber, an electronic device, and an electronic apparatus.

Background

A vapor chamber is a device that efficiently dissipates heat away from an electronic component. In the related art, the soaking plate is usually made of pure copper, but the copper material is expensive and has a large mass, and the cost of the copper soaking plate is high and does not meet the light weight requirement of the electronic product. In addition, due to the physical characteristics of copper, the processing technology of the copper soaking plate is complex, the production cost is high, the efficiency is low, and the yield of products is low.

Disclosure of Invention

The embodiment of the application discloses a vapor chamber, a manufacturing method of the vapor chamber, an electronic device and an electronic device.

The soaking plate of the embodiment of the application comprises an aluminum substrate and a capillary structure; a cavity is formed in the aluminum substrate, and the capillary structure is arranged in the cavity; the aluminum substrate has a grain size larger than 20um and a thermal conductivity larger than 240W/(m × K).

The manufacturing method of the soaking plate in the embodiment of the application comprises the following steps: providing an aluminum substrate, and stamping the aluminum substrate to form a cavity; providing a capillary structure, placing the capillary structure in the cavity; and carrying out heat treatment on the aluminum substrate and the capillary structure to enable the grain size of the aluminum substrate to be larger than 20um and the thermal conductivity of the aluminum substrate to be larger than 240W/(m × K).

The electronic device of the embodiment of the present application includes: the vapor chamber of any one of the above embodiments and an electronic component disposed at a bottom of the vapor chamber and in contact with the vapor chamber.

The electronic device of the embodiment of the present application includes a housing and the electronic device of any one of the above embodiments, the electronic device being disposed in the housing.

In the soaking plate, the manufacturing method of the soaking plate, the electronic device and the electronic device of the embodiment, the aluminum is used as the substrate of the soaking plate, the aluminum substrate has better processing performance, the processing technology is simpler, the cost is lower, the processing cost and the material cost of the soaking plate can be saved, and the yield of products can be improved. Meanwhile, the aluminum substrate has lower density, the weight of the soaking plate can be reduced, so that the electronic product is lighter, the grain size of the aluminum substrate is larger than 20um, and the thermal conductivity is larger than 240W/(m × K), so that the soaking plate has better heat dissipation capacity. Thus, the vapor chamber according to the embodiment of the present application can reduce the cost and the weight of the vapor chamber while ensuring the heat dissipation efficiency.

Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.

Drawings

The above and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

fig. 1 is a schematic perspective view of a vapor chamber according to an embodiment of the present application;

fig. 2 is a schematic structural view of a soaking plate according to the embodiment of the present application;

FIG. 3 is a schematic flow chart of a method of fabrication according to an embodiment of the present application;

FIG. 4 is a process diagram of a method of fabrication according to an embodiment of the present application;

FIG. 5 is another schematic flow chart of a method of fabrication according to an embodiment of the present application;

FIG. 6 is a schematic flow chart of a method of making an embodiment of the present application;

FIG. 7 is a schematic flow chart of a method of fabricating an embodiment of the present application;

FIG. 8 is a crystal phase diagram of an aluminum substrate according to the embodiment of the present application before heat treatment;

FIG. 9 is a crystal phase diagram of the aluminum substrate according to the embodiment of the present application after heat treatment;

FIG. 10 is a schematic flow chart of a method of making an embodiment of the present disclosure;

FIG. 11 is a schematic flow chart illustrating a method of fabricating an embodiment of the present invention;

FIG. 12 is a schematic flow chart of a method of fabricating an embodiment of the present application;

fig. 13 is another process diagram of the manufacturing method according to the embodiment of the present application.

FIG. 14 is a schematic plan view of an electronic device of an embodiment of the present application;

fig. 15 is a schematic plan view of an electronic device according to an embodiment of the present application.

Description of the main element symbols:

a soaking plate 100, an aluminum substrate 10, a chamber 11, a first part 12, a first chamber 121, and a second part 13. The device comprises a second chamber 131, a support pillar 132, a first half-hole 14, a second half-hole 15, a capillary structure 20, an aluminum net 21, a degassing hole 30, a degassing pipe 40 and a vacuum sintering furnace 200;

electronic device 1000, electronic component 300;

electronic device 2000, housing 2100.

Detailed Description

Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative and are only for the purpose of explaining the present application and are not to be construed as limiting the present application.

In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.

In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.

The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.

In the related art, the heat dissipation effect of the vapor chamber is much higher than that of the heat pipe, so the vapor chamber is widely applied to the field of electronic products. The soaking plate comprises a shell, a vacuum chamber formed by the shell, a capillary structure and a phase change working medium, wherein the capillary structure and the phase change working medium are arranged in the vacuum chamber. The working mode of the soaking plate is as follows: the shell is contacted with the heat source and absorbs heat on the heat source, the phase change working medium in the vacuum cavity is heated and then evaporated, and steam heat flow is diffused from the position of the soaking plate, which is contacted with the heat source, to the periphery. The steam heat flow is condensed and releases heat when reaching a region with lower temperature in the vacuum cavity, the heat is absorbed by the rest parts except the contact part of the shell and the heat source and is dissipated into air or transferred to other parts of the electronic product, the condensed steam heat flow is converted into liquid, and is absorbed by the capillary structure and conveyed back to the heat source region, so that the heat source is circulated in a reciprocating manner, and the heat source is cooled.

It follows that one important factor that determines the heat dissipation effect of a vapor chamber is the thermal conductivity of the vapor chamber, i.e., the thermal conductivity of the material from which the vapor chamber is made. First, in nature, the material with the highest thermal conductivity is diamond, which can reach 1300W/(m × K) -2400W/(m × K), but diamond is expensive and difficult to process, and thus is not suitable for manufacturing soaking plates requiring mass production. Secondly, the materials with higher thermal conductivity are various metals in sequence, and the thermal conductivity is arranged from high to low once: silver, copper, gold, aluminum, with silver and gold as precious metals and their physical properties are not suitable for use in fabricating vapor chambers. At present, the soaking plate is usually made of copper, the heat conductivity of the copper is high, the price of the copper is lower than that of silver and gold, and the heat dissipation effect of the soaking plate made of pure copper is better. However, since the density of pure copper is relatively high, the soaking plate made of pure copper has a large weight, which is not in line with the requirement of light weight of electronic products, and the price of pure copper is lower than that of gold and silver, but is still a metal with a high price. Moreover, because of the physical characteristics of pure copper, pure copper needs to be processed into the soaking plate with smaller size, and in most cases, only an etching process can be adopted, so that the processing cost is increased, and the thickness of the manufactured soaking plate is thicker, so that an obvious processing bottleneck exists, and the thinning of electronic products is not facilitated. Meanwhile, due to the limitation of the processing performance of the material, the etching process is usually adopted in the process of processing the cavity on the substrate of the soaking plate, but the etching process has higher processing cost under the condition of batch production, and the product yield of the etching process is lower, about 50% to 70%, so that the production cost is further improved.

Referring to fig. 1 and 2, a vapor chamber 100 is provided according to an embodiment of the present invention. The soaking plate 100 includes an aluminum substrate 10 and a capillary structure 20. The aluminum substrate 10 is formed with a chamber 11, and the capillary structure 20 is disposed in the chamber 11. The aluminum substrate 10 has a grain size greater than 20um, and the thermal conductivity of the aluminum substrate 10 is greater than 240W/(m × K).

In the soaking plate 100, aluminum is used as the substrate of the soaking plate 100, the aluminum substrate 10 has good processing performance, the processing technology is simple, the cost is low, and the processing cost and the material cost of the soaking plate 100 can be saved. And according to the processing performance of the aluminum substrate 10, the aluminum substrate 10 can be processed by adopting a stamping process, and the stamping process has higher product yield compared with an etching process, and is beneficial to further reducing the production cost. Meanwhile, the aluminum substrate 10 has a smaller density, and the weight of the soaking plate 100 can be reduced, so that the electronic product is lighter, and the grain size of the aluminum substrate 10 is larger than 20um, and the thermal conductivity is larger than 240W/(m × K), so that the soaking plate 100 has a better heat dissipation capability. In this way, the soaking plate 100 of the embodiment of the present application can reduce the cost and the weight of the soaking plate 100 while securing the heat dissipation efficiency.

Specifically, in this embodiment, a phase change working medium is injected into the cavity 11 of the soaking plate 100, the soaking plate 100 can be disposed at a heat source of the electronic device, one side of the aluminum substrate 10, which is provided with the capillary structure 20, contacts the heat source, the aluminum substrate 10 can absorb heat of the heat source and transmit the heat to the liquid phase change working medium, the liquid phase change working medium absorbs the heat and then evaporates into a gaseous state, and the gaseous phase change working medium diffuses around from a position where the aluminum substrate 10 contacts the heat source in the cavity 11. As the gaseous phase-change working medium reaches the region with lower temperature in the chamber 11, the gaseous phase-change working medium emits heat and is condensed into a liquid phase-change working medium. The emitted heat is dissipated into the air or transferred to other components of the electronic product through the aluminum substrate 10 to dissipate heat of the electronic device. The condensed liquid phase-change working medium is absorbed by the capillary structure 20 and is transported back to the area where the heat source is located to further absorb the heat of the heat source. The heat is circulated in a reciprocating way, so that the electronic device is efficiently radiated. It is understood that, in the present embodiment, the chamber 11 is a vacuum chamber.

In some embodiments, the aluminum substrate 10 may be made of pure aluminum, and pure aluminum has good plasticity and thermal conductivity, so the aluminum substrate 10 made of pure aluminum has good processability, and can be directly formed by stamping, and need not to be manufactured by an etching process like copper, which reduces the cost, and thus, the manufacturing cost can be reduced and the heat dissipation performance of the soaking plate 100 made of the aluminum substrate 10 can be ensured. Of course, in other embodiments, the aluminum substrate 10 may be made of other aluminum metals, such as aluminum alloy.

It can be understood that in the microstructure, the thermal conductivity of the material is strongly related to the microstructure of the material, and the larger the grain size of the aluminum substrate 10 is, the internal defects such as grain boundaries, cracks, dislocations, holes and precipitation can be effectively reduced, so that the thermal resistance of electron and phonon heat conduction is reduced. Therefore, in a certain range, the larger the crystal grain size of the aluminum substrate 10, the higher the thermal conductivity of the aluminum substrate 10, and thus the better the thermal conductivity of the aluminum substrate 10.

Therefore, in the present embodiment, the heat treatment of the aluminum substrate 10 can increase the crystal grain size of the aluminum substrate 10 to more than 20um, thereby increasing the thermal conductivity of the aluminum substrate 10 to more than 240W/(m × K) to improve the heat dissipation performance of the soaking plate 100 supported by the aluminum substrate 10.

Since the aluminum substrate 10 has good plasticity and good workability, the cavity 11 can be formed by a stamping process. Since the soaking plates 100 are usually produced in mass, although the stamping die is expensive, manufacturing one set of stamping die can produce a large amount of soaking plates 100, which is beneficial to reducing the production cost as a whole. In addition, the processing performance of the aluminum is better, and the yield of the aluminum in the processing process is higher compared with the etching process adopting copper.

In some embodiments, the aluminum substrate 10 has a grain size of 20 to 50 um. The aluminum substrate 10 has a thermal conductivity of 240.4W/(m × K) to 246.4W/(m × K).

Thus, the aluminum substrate 10 with the grain size ranging from 20um to 50um is used to manufacture the soaking plate 100, so that the heat dissipation capability of the soaking plate 100 is improved.

Specifically, in such an embodiment, the aluminum substrate 10 may be subjected to a high-temperature annealing heat treatment process to make the grain size of the aluminum substrate 10 be in the range of 20um to 50um, so as to increase the thermal conductivity of the aluminum substrate 10 and further improve the heat dissipation effect. In this embodiment, the heat treatment temperature of the high-temperature annealing is 300 ℃ and the heat treatment time is 1 hour, and after the heat treatment is completed, the aluminum substrate 10 is placed in a furnace and furnace-cooled.

In some embodiments, the aluminum substrate 10 has a grain size of 100 to 200 um. The aluminum substrate 10 has a thermal conductivity of 246.4W/(m × K) to 259.3W/(m × K).

Thus, the aluminum substrate 10 with the grain size ranging from 100um to 200um is used for manufacturing the soaking plate 100, so that the heat dissipation capability of the soaking plate 100 is obviously improved.

Specifically, the aluminum substrate 10 may be subjected to a heat treatment process of high-temperature annealing, so that the grain size of the aluminum substrate 10 is in a range of 100um to 200um, thereby improving the thermal conductivity of the aluminum substrate 10. In this embodiment, the heat treatment temperature of the high-temperature annealing is 500 ℃ and the heat treatment time is 1 hour, and after the heat treatment is completed, the aluminum substrate 10 is placed in a furnace and cooled.

In some embodiments, the aluminum substrate 10 has a grain size of 950um to 1050 um. The thermal conductivity of the aluminum substrate 10 is greater than 259.3W/(m × K).

Thus, the aluminum substrate 10 with the grain size in the range of 950um to 1050um is used to manufacture the soaking plate 100, so that the heat dissipation capability of the soaking plate 100 is remarkably improved.

Specifically, the aluminum substrate 10 may be subjected to a heat treatment process of high temperature annealing so that the grain size of the aluminum substrate 10 is in a range of 950um to 1050 um. In the embodiment of the present application, the heat treatment temperature of the high-temperature annealing is 600 ℃ and the heat treatment time is 1 hour, and after the heat treatment is completed, the aluminum substrate 10 is placed in a furnace and furnace-cooled.

In addition, in the embodiment of the present application, since a severe thermal deformation may occur due to an excessively high temperature during the high temperature heat treatment of the aluminum, so as to reduce the strength and yield of the soaking plate, for example, when the heat treatment temperature is higher than 600 ℃, the aluminum substrate 10 may be severely thermally deformed, and therefore, in the embodiment of the present application, the temperature for performing the heat treatment on the aluminum substrate 10 is preferably lower than 600 ℃, and the preferred heat treatment temperature is 500 ℃, so that after performing the heat treatment on the aluminum substrate 10, the thermal conductivity of the aluminum substrate 10 can be improved, and at the same time, the aluminum substrate 10 is ensured not to be severely thermally deformed, so as to improve the yield of the product.

Referring to fig. 1-3, in some embodiments, the thickness d of the soaking plate 100 is less than 0.4 mm. The aluminum substrate 10 has a thickness a of 0.1mm to 0.15 mm.

Thus, the thickness a of the aluminum substrate 10 is 0.1mm to 0.15mm, and the thickness d of the soaking plate 100 made of the aluminum substrate 10 can be smaller than 0.4mm, so that the light and thin requirements of electronic products can be met.

Specifically, the heat dissipation capability of the soaking plate 100 is related to the structure of the soaking plate 100, more specifically, the thickness a of the aluminum substrate 10 from which the soaking plate 100 is made. To some extent, the smaller the thickness a of the aluminum substrate 10 is, the better the heat dissipation capability of the soaking plate 100 is. It can be understood that the smaller the thickness a of the aluminum substrate 10, the easier the phase change working medium in the chamber 11 exchanges heat with the outside. That is to say, the external heat source more easily transmits heat to the phase change working medium through the aluminum substrate 10, so that the phase change working medium is converted into a gaseous state, and the gaseous phase change working medium also more easily transmits heat to other external spaces through the aluminum substrate 10, so as to be converted back into a liquid state, so as to reciprocate. Therefore, the aluminum substrate 10 having a smaller thickness is more advantageous for improving the heat dissipation capability of the soaking plate 100.

Referring to fig. 2, in some embodiments, the capillary structure 20 includes an aluminum mesh 21. An aluminum mesh 21 is attached to the bottom of the chamber 11. The grain size of the aluminium mesh 21 is greater than 20um and the thermal conductivity of the aluminium mesh 21 is greater than 240W/(m x K).

Thus, the aluminum mesh 21 and the aluminum substrate 10 are made of the same material and have the same physical properties, and the capillary structure 20 also has good thermal conductivity, so that the heat dissipation performance of the soaking plate 100 can be further improved.

Specifically, the aluminum mesh 21 can be attached to the bottom of the chamber 11 through a heat treatment process, so that the degree of combination of the aluminum mesh 21 and the aluminum substrate 10 is improved, a stable steam channel and a liquid backflow channel can be formed between the aluminum mesh 21 and the aluminum substrate 10, the rate of conversion of the phase change working medium between a gaseous state and a liquid state is improved, the rate of heat diffusion in the vapor chamber 100 is improved, and the heat dissipation capacity of the vapor chamber 100 is improved.

Referring to fig. 2, in some embodiments, the thickness b of the aluminum mesh 21 is 0.05mm to 0.1 mm. Thus, the thickness b of the aluminum net 21 is smaller than the thickness a of the aluminum substrate 10, and on the premise that the aluminum net 21 can be accommodated in the cavity 11 formed on the aluminum substrate 10, the aluminum net 21 has a certain thickness, so that when the aluminum net 21 meets the requirement of being light and thin, the aluminum net 21 can provide enough steam channels and liquid backflow channels, and enough space is provided inside the aluminum net 21 to accommodate more phase change working media, so as to improve the heat dissipation capability of the soaking plate 100.

Referring to fig. 1 and 2, in some embodiments, the aluminum substrate 10 includes a first portion 12 and a second portion 13 connected to each other. The first and

second parts

12 and 13 are formed with first and

second chambers

121 and 131, respectively. The second portion 13 is bent with respect to the first portion 12 and stacked on the first portion 12 such that the first and

second cavities

121 and 131 cooperate to form the cavity 11.

Thus, the first cavity 121 and the second cavity 131 are formed respectively, so that the processing and forming of the first cavity 121 and the second cavity 131 are facilitated, and the processing technology is simplified.

Specifically, the aluminum substrate 10 may be a rectangular plate, and the first cavity 121 and the second cavity 131 may be symmetrical along the center line L of the aluminum substrate 10. The aluminum substrate 10 may further have a plurality of supporting pillars 132 formed in the second chamber 131, the aluminum mesh 21 may be attached to the bottom of the first chamber 121, and when the first chamber 121 and the second chamber 131 cooperate to form the chamber 11, the supporting pillars 132 are pressed on the aluminum mesh 21. The support column 132 can improve the structural strength of the soaking plate 100, and the support column 132 can also increase the contact area between the gaseous phase change working medium in the cavity 11 and the aluminum substrate 10, so that the conversion rate of the phase change working medium between the gaseous state and the liquid state is improved, and the heat dissipation capacity of the soaking plate 100 is finally improved.

In some embodiments, the second portion 13 may be bent and stacked on the first portion 12 along the center line L, and after the first portion 12 and the second portion 13 are bent and stacked, the other three edges of the first portion 12 and the second portion 13 which are not connected may be sealed using a welding process so that the chamber 11 becomes a closed space. In the present embodiment, the three edges are sealed using a high temperature brazing process.

Referring to fig. 1 and 2, in some embodiments, the first cavity 121 and the second cavity 131 may be formed by a stamping process, and the first half-hole 14 and the second half-hole 15 may be respectively stamped and formed at edges of the first cavity 121 and the second cavity 131. The first half-hole 14 and the second half-hole 15 may cooperate to form the degassing hole 30 when the first chamber 121 and the second chamber 131 cooperate.

Specifically, the degassing pipe 40 may be connected to the degassing hole 30 through a high frequency welding process, a phase change working medium may be added into the chamber 11 through the degassing pipe 40, and the chamber 11 may be subjected to a vacuum pumping process through the degassing pipe 40, so as to form a vacuum environment in the chamber 11. The degassing tube 40 is then clamped and sealed, the excess tube is cut off, and the opening is sealed. The opening of the sealing degassing pipe 40 can adopt an argon arc welding process.

Referring to fig. 3 and 4, a method for manufacturing the soaking plate 100 according to the embodiment of the present application includes:

s10: providing an aluminum substrate 10, and stamping the aluminum substrate 10 to form a cavity 11;

s20: providing a capillary structure 20, and placing the capillary structure 20 in the chamber 11;

s30: the aluminum substrate 10 and the capillary structure 20 are integrally heat-treated so that the aluminum substrate 10 has a grain size of more than 20um and the aluminum substrate 10 has a thermal conductivity of more than 240W/(m × K).

In the above manufacturing method of the soaking plate 100, aluminum is used as the substrate of the soaking plate 100, the aluminum substrate 10 has better processing performance, the processing technology is simpler, the cost is lower, the processing cost and the material cost of the soaking plate 100 can be saved, and the yield of the product can be improved. Meanwhile, the aluminum substrate 10 has a smaller density, and the weight of the soaking plate 100 can be reduced, so that the electronic product is lighter, and the grain size of the aluminum substrate 10 is larger than 20um, and the thermal conductivity is larger than 240W/(m × K), so that the soaking plate 100 has a better heat dissipation capability. In this way, the soaking plate 100 of the embodiment of the present application can reduce the cost and the weight of the soaking plate 100 while securing the heat dissipation efficiency.

Specifically, in the related art, due to the limitation of the processing performance of the material, an etching process is generally used for processing the cavity on the substrate of the soaking plate, but the etching process has a high processing cost under the condition of mass production, and the product yield of the etching process is low, about 50% to 70%, which further increases the production cost.

The present embodiment proposes to use aluminum as the substrate of the soaking plate 100, and since aluminum has high plasticity and good workability, the aluminum substrate 10 can be processed by a press process. Under the condition of mass production, the cost of the stamping process is lower than that of the etching process, and the product yield of the stamping process is higher than that of the etching process, so that the stamping process can effectively reduce the processing cost of the soaking plate 100.

After the aluminum substrate 10 is punched to form the cavity 11 and the capillary structure 20 is placed in the cavity 11, the aluminum substrate 10 and the capillary structure 20 may be integrally heat-treated, so that the capillary structure 20 can be attached to the bottom of the cavity 11, and the grain size of the aluminum substrate 10 is increased, thereby increasing the thermal conductivity of the aluminum substrate 10. It can be understood that in the microstructure, the thermal conductivity of the material is strongly related to the microstructure of the material, and the larger the grain size of the aluminum substrate 10 is, the internal defects such as grain boundaries, cracks, dislocations, holes and precipitation can be effectively reduced, so that the thermal resistance of electron and phonon heat conduction is reduced. Therefore, in a certain range, the larger the crystal grain size of the aluminum substrate 10, the higher the thermal conductivity of the aluminum substrate 10, and thus the better the thermal conductivity of the aluminum substrate 10.

Referring to fig. 1 and 2, in some embodiments, the aluminum substrate 10 has a thickness a of 0.1mm to 0.15mm, and the soaking plate 100 supported by the aluminum substrate 10 has a thickness d of less than 0.4 mm. Thus, the requirement for light weight of electronic products can be satisfied.

Referring to fig. 4 and 5, in some embodiments, step S30 includes:

s301: the aluminum substrate 10 and the capillary structure 20 are placed in a vacuum sintering furnace 200 to be heat-treated so that the crystal grain size of the aluminum substrate 10 is 20um to 50um and the thermal conductivity of the aluminum substrate 10 is 240.4W/(m × K) to 246.4W/(m × K), the processing temperature of the heat treatment is 300 ℃, and the processing time is 1 hour.

Therefore, the size of the crystal grains of the aluminum substrate 10 is increased through the heat treatment process, the number of the crystal grains is one digit in the thickness direction of the aluminum substrate 10, and internal defects such as crystal boundaries, cracks, dislocations, holes and precipitation on the aluminum substrate 10 can be reduced, so that the thermal resistance of electron and phonon heat conduction is reduced, the thermal conductivity of the aluminum substrate 10 is increased, and the heat radiation performance of the soaking plate 100 is improved.

Referring to fig. 4 and 6, in some embodiments, step S30 includes:

s302: the aluminum substrate 10 and the capillary structure 20 are placed in a vacuum sintering furnace 200 to be heat-treated so that the aluminum substrate 10 has a crystal grain size of 100um to 200um and the aluminum substrate 10 has a thermal conductivity of 246.4W/(m × K) to 259.3W/(m × K), the heat treatment is performed at a processing temperature of 500 ℃, and the processing time is 1 hour.

Therefore, the grain size of the aluminum substrate 10 is increased by the heat treatment process, and the aluminum substrate 10 has a single crystal structure in the thickness direction, so that the influence of internal defects such as crystal boundaries, cracks, dislocations, holes and precipitation can be greatly eliminated in the thickness direction, the thermal resistance of heat conduction of electrons and phonons is greatly eliminated, the thermal conductivity of the aluminum substrate 10 is increased, and the heat dissipation performance of the soaking plate 100 can be obviously improved.

Referring to fig. 4 and 7, in some embodiments, step S30 includes:

s303: the aluminum substrate 10 and the capillary structure 20 are placed in a vacuum sintering furnace 200 to be heat-treated so that the crystal grain size of the aluminum substrate 10 is 950um to 1050um and the thermal conductivity of the aluminum substrate 10 is more than 259.3W/(m × K), the processing temperature of the heat treatment is 600 ℃, and the processing time is 1 hour.

Thus, the grain size of the aluminum substrate 10 is increased by the heat treatment process, the grain size of the aluminum substrate 10 grows to a millimeter level, and the heat dissipation performance of the soaking plate 100 can be greatly improved.

Specifically, referring to fig. 8 and 9, the processing temperature is 600 ℃ and the processing time is 1 hour as an example, fig. 8 is a crystal phase diagram of the aluminum substrate 10 before heat treatment, and fig. 9 is a crystal phase diagram of the aluminum substrate 10 after heat treatment at the temperature of 600 ℃ and the processing time of 1 hour. As is clear from FIGS. 8 and 9, the crystal grain size of the aluminum substrate 10 before the heat treatment is small, and the crystal grain size of the aluminum substrate 10 after the heat treatment is significantly increased. The aluminum substrate 10 with the increased grain size reduces internal defects, and improves the thermal conductivity, thereby improving the thermal conductivity of the vapor chamber 100.

In the embodiment of the present application, the crystallographic phase diagram of the aluminum substrate 10 may be obtained by a scanning Electron microscope, and further, the crystallographic phase diagram of the aluminum substrate 10 may be obtained by an Electron Back-scattered Diffraction technique using a scanning Electron microscope equipped with an EBSD (Electron Back-scattered Diffraction) probe. Specifically, fig. 8 and 9 are crystal phase diagrams of the same aluminum substrate 10 before and after heat treatment, and the scanning electron microscope is fig. 8 and 9 obtained under the same environmental conditions, for example, under the same environmental temperature, environmental humidity, light, and the like, the crystal phase diagrams of the aluminum substrate 10 before and after heat treatment are obtained. Of course, in other embodiments, the crystal phase diagram of the aluminum substrate 10 may be observed in other manners, for example, the aluminum substrate 10 is made into a metallographic sample, and the gold phase diagram of the aluminum substrate 10 is obtained by a metallographic microscope.

In the present embodiment, the sizes of the crystal grain sizes in fig. 8 and 9 can be analyzed using EBSD analysis software. In other embodiments, the scale bar may be obtained according to the magnification of the scanning electron microscope to measure the crystal grain size in the phase diagram. Specifically, in an example, referring to fig. 8, before the aluminum substrate 10 is subjected to the heat treatment, a 20um scale can be obtained according to the magnification of the scanning electron microscope, and the size of the crystal grain of the aluminum substrate 10 before the heat treatment can be measured according to the scale, so that the size of the crystal grain in fig. 8 can be measured. Similarly, referring to fig. 9, after the aluminum substrate 10 is heat-treated, a 400um scale can be obtained according to the magnification of the scanning electron microscope, and the size of the grain size of the aluminum substrate 10 after the heat treatment can be measured according to the scale, so that the size of the grain in fig. 9 can be measured.

In summary, the aluminum substrate 10 can be heat-treated at 300 ℃, 500 ℃ and 600 ℃ for 1 hour to obtain an aluminum substrate 10 with higher thermal conductivity. However, in practical applications, the thermal conductivity of the aluminum substrate 10 heat-treated at 300 ℃ for 1 hour is improved, but the improvement is less significant. The aluminum substrate 10 heat-treated at 600 ℃ for 1 hour has a greatly improved thermal conductivity, but the aluminum substrate 10 may be largely thermally deformed to affect the subsequent processing. And the aluminum substrate 10 which is heat treated for 1 hour at 500 ℃ not only has obviously improved heat conductivity, but also the aluminum substrate 10 is not deformed in the processing, and the capillary structure 20 can be well combined on the aluminum substrate 10 to form a stable liquid backflow channel and a stable steam channel. Therefore, in the embodiment of the present application, the aluminum substrate 10 can be processed by a heat treatment process in which the heat treatment temperature is 500 ℃ and the heat treatment time is 1 hour. Of course, the heat treatment temperature may be 600 ℃, and in such an embodiment, the aluminum substrate 10 after the heat treatment is subjected to deformation detection, and if the thermal deformation is serious, the aluminum substrate can be corrected by the correction process.

Referring to fig. 10, in some embodiments, the capillary structure 20 includes an aluminum mesh 21, and the aluminum mesh 21 is formed by a stamping process. Step S30 includes:

s304: the aluminum substrate 10 and the aluminum mesh 21 are integrally heat-treated so that the aluminum mesh 21 is attached to the bottom of the chamber 11, and the aluminum substrate 10 and the aluminum mesh 21 each have a crystal grain size of more than 20um and a thermal conductivity of the aluminum substrate 10 and the aluminum mesh 21 each of more than 240W/(m × K).

Thus, the aluminum mesh 21 can be tightly attached to the bottom of the chamber 11 at high temperature, a stable liquid backflow channel and a stable steam channel can be formed between the aluminum mesh 21 and the aluminum substrate 10, and the aluminum substrate 10 and the aluminum mesh 21 with higher thermal conductivity can be obtained, so that the heat dissipation capacity of the vapor chamber 100 is improved.

Referring to fig. 11, in some embodiments, before step S30, the manufacturing method further includes:

the aluminum substrate 10 and the capillary structure 20 are degreased.

In this way, the lubricant, grease, and the like remaining on the surfaces of the aluminum substrate 10 and the capillary structure 20 in the preceding process can be eliminated. In addition, impurities such as chips and oxide films remaining on the surfaces of the aluminum substrate 10 and the capillary structure 20 can be removed during the degreasing treatment, so that the influence of external impurities on the processing performance and the heat dissipation performance of the aluminum substrate 10 and the capillary structure 20 can be reduced.

Specifically, in the degreasing treatment, an alkalescent degreasing agent can be used, and the aluminum substrate 10 and the capillary structure 20 are cleaned by matching with an ultrasonic generator, then washed with water, soaked with alcohol, and finally placed at normal temperature for air drying.

Referring to fig. 4 and 12, in some embodiments, the aluminum substrate 10 includes a first portion 12 and a second portion 13 connected to each other, and the second portion 13 can be bent relative to the first portion 12 and stacked on the first portion 12. Step S10 includes:

s101: stamping a first cavity 121 and a second cavity 131 on the first part 12 and the second part 13 respectively;

step S20 includes:

s201: the capillary structure 20 is placed in the first chamber 121.

In this way, the first cavity 121 and the second cavity 131 may be respectively formed on the aluminum substrate 10 by a stamping process, the capillary structure 20 may be placed in the first cavity 121, and the first portion 12 may be bent relative to the second portion 13 and stacked on the first portion 12, sealing the capillary structure 20 in the space formed by the first cavity 121 and the second cavity 131.

Specifically, the aluminum substrate 10 may further have a plurality of supporting pillars 132 formed in the second cavity 131 through a stamping process, and after the first portion 12 is bent and stacked on the second portion 13, the supporting pillars 132 may reinforce the structure of the aluminum substrate 10, thereby effectively preventing the soaking plate 100 from deforming in use.

Referring to fig. 13 and 14, in some embodiments, after step S30, the manufacturing method further includes:

s40: folding and stacking the second part 13 on the first part 12 to enable the first part 12 and the second part 13 to be matched to form the cavity 11;

s50: welding and sealing the gap between the first part 12 and the second part 13;

s60: the soaking plate 100 is subjected to vacuum evacuation.

As such, the first cavity 121 of the first portion 12 may cooperate with the second cavity 131 of the second portion 13 to form the cavity 11. The chamber 11 can be formed into a closed space by welding the gap between the first part 12 and the second part 13.

Specifically, after the first and

second portions

12 and 13 are bent and stacked, the other three edges of the first and

second portions

12 and 13, which are not connected, may be sealed using a high temperature brazing process to make the chamber 11 a closed space.

When the first cavity 121 and the second cavity 131 are punched, the first half-hole 14 and the second half-hole 15 may be punched at the edges of the first cavity 121 and the second cavity 131, respectively. First, when the first chamber 121 and the second chamber 131 are matched, the first half-hole 14 and the second half-hole 15 can be matched to form the degassing hole 30. The degassing pipe 40 can be connected to the degassing hole 30 through a high-frequency welding process, a phase-change working medium can be added into the cavity 11 through the degassing pipe 40, and the cavity 11 is vacuumized through the degassing pipe 40, so that a vacuum environment is formed in the cavity 11. The degassing tube 40 is then clamped and sealed, the excess tube is cut off, and the opening is sealed. The opening of the sealing degassing pipe 40 can adopt an argon arc welding process.

Further, in the embodiment of the present application, the phase-change working medium may be pure water or other liquid that does not chemically react with the aluminum substrate 10 and the capillary structure 20.

Referring to fig. 14, an electronic device 1000 according to an embodiment of the present application includes: an electronic component 300 and the heat spreader 100 according to any of the above embodiments, wherein the electronic component 300 is disposed at the bottom of the heat spreader 100 and in contact with the heat spreader 100.

In the electronic device 1000, aluminum is used as the substrate of the soaking plate 100, the aluminum substrate 10 has good processing performance, the processing technology is simple, the cost is low, the processing cost and the material cost of the soaking plate 100 can be saved, and the yield of products can be improved. Meanwhile, the aluminum substrate 10 has a smaller density, and the weight of the soaking plate 100 can be reduced, so that the electronic product is lighter, and the crystal grain size of the aluminum substrate 10 is larger than 20um, and the thermal conductivity is larger than 240W/(m × K), so that the soaking plate 100 has a better heat dissipation capability. In this way, the soaking plate 100 of the embodiment of the present application can reduce the cost and the weight of the soaking plate 100 while securing the heat dissipation efficiency, thereby reducing the weight of the entire electronic device 1000.

Specifically, the electronic component 300 may include an electronic chip or the like that generates a large amount of heat during operation. With continued reference to fig. 14, the soaking plate 100 is covered on the electronic component 300, and the bottom of the soaking plate 100 is in contact with the electronic component 300. it should be noted that the first portion 12 of the soaking plate 100 is in contact with the electronic component 300, i.e. the side of the soaking plate 100 provided with the capillary structure 20 is in contact with the electronic component 300, so that the capillary structure 20 can collect the liquid phase-change working medium to continuously absorb the heat of the electronic component 300.

Referring to fig. 15, an electronic device 2000 according to an embodiment of the present application includes a housing 2100 and an electronic device 1000 according to any of the above embodiments, where the electronic device 1000 is disposed in the housing 2100.

In the electronic device 2000, aluminum is used as the substrate of the soaking plate 100, the aluminum substrate 10 has better processing performance, the processing technology is simpler, the cost is lower, the processing cost and the material cost of the soaking plate 100 can be saved, and the yield of products can be improved. Meanwhile, the aluminum substrate 10 has a smaller density, and the weight of the soaking plate 100 can be reduced, so that the electronic product is lighter, and the grain size of the aluminum substrate 10 is larger than 20um, and the thermal conductivity is larger than 240W/(m × K), so that the soaking plate 100 has a better heat dissipation capability. In this way, the soaking plate 100 of the embodiment of the present application can reduce the cost and the weight of the soaking plate 100 while ensuring the heat dissipation efficiency, thereby reducing the weight of the entire electronic device 2000 to reduce the weight of the electronic device 2000.

Specifically, the electronic device 2000 includes, but is not limited to, a mobile phone, a desktop computer, a notebook computer, a tablet computer, a smart watch, and other electronic devices. Taking a mobile phone as an example, the electronic component may be a central processing unit of the mobile phone.

In the description herein, references to the description of the terms "one embodiment," "certain embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

Moreover, any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps of the process, and alternate implementations are included within the scope of the preferred embodiment of the present application in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of the embodiments of the present application.

While embodiments of the present application have been shown and described above, it will be understood by those of ordinary skill in the art that: numerous changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the application, the scope of which is defined by the claims and their equivalents.

Claims

1. A vapor chamber, comprising:

the aluminum substrate is provided with a cavity; and

a capillary structure disposed within the chamber;

wherein the grain size of the aluminum substrate is more than 20um, and the thermal conductivity of the aluminum substrate is more than 240W/(m × K);

the aluminum substrate comprises a first part and a second part which are connected, wherein a first cavity and a second cavity are formed in the first part and the second part respectively, and the second part is bent relative to the first part and stacked on the first part, so that the first cavity and the second cavity are matched to form the cavities.

2. The soaking plate according to claim 1, wherein the aluminum substrate has a grain size of 20 to 50um, and the aluminum substrate has a thermal conductivity of 240.4W/(mK) to 246.4W/(mK).

3. The soaking plate according to claim 1, wherein the aluminum substrate has a crystal grain size of 100 to 200um, and the aluminum substrate has a thermal conductivity of 246.4 to 259.3W/(mK).

4. The soaking plate according to claim 1, wherein the aluminum substrate has a crystal grain size of 950um to 1050um, and the thermal conductivity of the aluminum substrate is more than 259.3W/(m.multidot.K).

5. The soaking plate according to claim 1, wherein the soaking plate has a thickness of less than 0.4mm and the aluminum substrate has a thickness of 0.1mm to 0.15 mm.

6. The vapor chamber of any of claims 1-5, wherein the capillary structure comprises an aluminum mesh affixed to the bottom of the chamber, the aluminum mesh having a grain size greater than 20um and a thermal conductivity greater than 240W/(m x K).

7. The soaking plate according to claim 6, wherein the thickness of the aluminum mesh is 0.05mm to 0.1 mm.

8. A manufacturing method of a soaking plate is characterized by comprising the following steps:

providing an aluminum substrate, and stamping the aluminum substrate to form a cavity;

providing a capillary structure, placing the capillary structure in the cavity;

heat treating the aluminum substrate and the capillary structure to make the crystal grain size of the aluminum substrate larger than 20um and make the thermal conductivity of the aluminum substrate larger than 240W/(m K);

the aluminum substrate comprises a first part and a second part which are connected, and the second part can be bent relative to the first part and stacked on the first part;

the step of stamping the aluminum substrate to form the cavity comprises the following steps:

stamping a first cavity and a second cavity on the first part and the second part respectively;

the step of placing the capillary structure within the chamber comprises:

placing the capillary structure in the first chamber.

9. The method according to claim 8, wherein the step of heat-treating the aluminum substrate and the capillary structure as a whole to make the crystal grain size of the aluminum substrate larger than 20um and make the thermal conductivity of the aluminum substrate larger than 240W/(m × K) comprises:

and putting the aluminum substrate and the capillary structure into a vacuum sintering furnace for heat treatment so as to enable the grain size of the aluminum substrate to be 20-50 um and the thermal conductivity of the aluminum substrate to be 240.4W/(m.multidot.K) -246.4W/(m.multidot.K), wherein the processing temperature of the heat treatment is 300 ℃, and the processing time is 1 hour.

10. The method according to claim 8, wherein the step of heat-treating the aluminum substrate and the capillary structure as a whole to make the crystal grain size of the aluminum substrate larger than 20um and make the thermal conductivity of the aluminum substrate larger than 240W/(m × K) comprises:

and putting the aluminum substrate and the capillary structure into a vacuum sintering furnace for heat treatment so as to enable the grain size of the aluminum substrate to be 100-200 um and the thermal conductivity of the aluminum substrate to be 246.4-259.3W/(mK), wherein the processing temperature of the heat treatment is 500 ℃ and the processing time is 1 hour.

11. The method according to claim 8, wherein the step of heat-treating the aluminum substrate and the capillary structure as a whole to make the crystal grain size of the aluminum substrate larger than 20um and make the thermal conductivity of the aluminum substrate larger than 240W/(m × K) comprises:

and putting the aluminum substrate and the capillary structure into a vacuum sintering furnace for heat treatment so as to enable the grain size of the aluminum substrate to be 950 um-1050 um and the thermal conductivity of the aluminum substrate to be more than 259.3W/(m × K), wherein the processing temperature of the heat treatment is 600 ℃, and the processing time is 1 hour.

12. The method of manufacturing a vapor chamber according to claim 8, wherein the capillary structure comprises an aluminum mesh made by a stamping process;

the step of performing heat treatment on the aluminum substrate and the capillary structure to make the crystal grain size of the aluminum substrate larger than 20um and make the thermal conductivity of the aluminum substrate larger than 240W/(m × K) comprises the following steps:

and carrying out heat treatment on the whole aluminum substrate and the aluminum mesh to enable the aluminum mesh to be attached to the bottom of the chamber, and enabling the grain sizes of the aluminum substrate and the aluminum mesh to be larger than 20um and the thermal conductivities of the aluminum substrate and the aluminum mesh to be larger than 240W/(m × K).

13. The method for manufacturing a soaking plate according to claim 8, wherein before the heat treatment of the aluminum substrate and the capillary structure as a whole, the method for manufacturing a soaking plate further comprises:

and carrying out degreasing treatment on the aluminum substrate and the capillary structure.

14. The method for manufacturing a soaking plate according to claim 8, wherein after the step of heat-treating the aluminum substrate and the capillary structure as a whole, the method for manufacturing further comprises:

folding and stacking the second part on the first part to enable the first part and the second part to be matched to form the cavity;

welding and sealing a gap between the first portion and the second portion;

and vacuumizing the soaking plate.

15. An electronic device, comprising:

an electronic component; and

the heat spreader of any of claims 1-7, wherein the electronic component is disposed at the bottom of the heat spreader and in contact with the heat spreader.

16. An electronic device, comprising:

a housing; and

the electronic device of claim 15 disposed within the housing.