CN112071956B - Preparation process of novel InGaAs infrared focal plane detector - Google Patents
Preparation process of novel InGaAs infrared focal plane detector Download PDFInfo
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- CN112071956B CN112071956B CN202010937303.1A CN202010937303A CN112071956B CN 112071956 B CN112071956 B CN 112071956B CN 202010937303 A CN202010937303 A CN 202010937303A CN 112071956 B CN112071956 B CN 112071956B
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims description 8
- 238000010521 absorption reaction Methods 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 27
- 238000001704 evaporation Methods 0.000 claims description 21
- 238000001259 photo etching Methods 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 238000000206 photolithography Methods 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 230000031700 light absorption Effects 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Computer Hardware Design (AREA)
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Abstract
In order to increase the absorption efficiency of infrared light, a Ti/Au reflecting layer is added between pixels, so that the infrared light which is not absorbed by the InGaAs absorbing layer cannot penetrate through a chip to irradiate a reading circuit, but passes through the Ti/Au reflecting layer, is reflected back and is secondarily absorbed by the InGaAs absorbing layer, the light absorption rate of a device is improved, and the detection efficiency of the chip is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a preparation process of a novel InGaAs infrared focal plane detector.
Background
The InGaAs PIN plane type short wave infrared focal plane detector has a response wave band of 0.9-1.7um, has high detectivity, low power consumption and cost under the non-refrigeration condition, has low dark current and good radiation resistance, and has wide attention to the application in the fields of aviation safety, biomedicine, camouflage identification, infrared night vision and the like. In the existing detector technology, infrared light irradiates on a detector, most of light between two pixels is absorbed by the InGaAs absorption layer, but the rest part of the light transmits out of the InGaAs absorption layer and irradiates on a reading circuit, and the light is not absorbed by the InGaAs absorption layer, so that the light absorption rate is reduced.
Disclosure of Invention
In order to overcome the defects and shortcomings of the prior art, the preparation process of the novel InGaAs infrared focal plane detector is provided, so that unabsorbed light is secondarily absorbed by the InGaAs absorption layer after passing through the reflector, the light absorption rate of the device is improved, and the quantum efficiency is further improved.
The preparation process of the novel InGaAs infrared focal plane detector provided for realizing the purpose of the invention comprises the following steps:
the first step is as follows: sequentially growing an N-type InP metal contact layer and an absorption layer In on an InP substrate by using MOCVD 0.53 Ga 0.47 As, cap layer N type InP, sacrificial layer InGaAs, form the epitaxial structure;
the second step is that: removing the sacrificial layer InGaAs by a wet method, and then depositing a first layer of silicon nitride on the cap layer N-type InP to form a passivation layer to prepare for first photoetching;
the third step: carrying out first photoetching to open a hole, carrying out dry etching on the first layer of silicon nitride, and carrying out zinc diffusion to form P-type doping;
the fourth step: depositing a second layer of silicon nitride, making a second photoetching hole, and etching the silicon nitride by a dry method to form an ohmic hole to prepare for evaporating a P-type metal;
the fifth step: making a third photoetching hole, evaporating and plating a P-type metal and stripping to prepare for forming a P-type ohmic contact;
and a sixth step: performing a fourth photolithography to etch the first and second layers of silicon nitride by dry etching and the cap layer of N-type InP by wet etching to etch the absorption layer In 0.53 Ga 0.47 Preparing As;
the seventh step: performing a fifth photolithography to etch the In absorption layer 0.53 Ga 0.47 As, evaporating and stripping N-type metal to prepare for forming N-type ohmic contact;
the eighth step: annealing the P-type metal and the N-type metal to form ohmic contact between the P-type metal and the N-type metal;
the ninth step: making a sixth photoetching opening, evaporating Ti/Au and stripping to form a Ti/Au reflecting layer;
the tenth step: depositing a fourth layer of silicon nitride, performing a seventh photoetching, and etching the fourth layer of silicon nitride covering the P-type metal and the N-type metal by a dry method to prepare for evaporating the indium columns;
the eleventh step: thinning and polishing the InP substrate, and depositing an antireflection film on the polished InP substrate to increase the light transmittance;
the twelfth step: performing eighth photoetching, evaporating and stripping indium columns to form a diode array, and preparing for flip chip interconnection;
and a thirteenth step of: and the diode array and the reading circuit are in flip interconnection to form an InGaAs infrared focal plane detector chip.
The invention has the beneficial effects that:
compared with the prior art, the preparation process of the novel InGaAs infrared focal plane detector provided by the invention has the advantages that the Ti/Au reflecting layer is added, so that unabsorbed light passes through the reflecting layer and is secondarily absorbed by the InGaAs absorbing layer, the light absorption rate of the device is improved, and the quantum efficiency is further improved.
Drawings
The following detailed description of embodiments of the invention is provided in conjunction with the appended drawings, in which:
FIG. 1 is a cross-sectional view of an epitaxial structure of the present invention;
FIG. 2 is a schematic representation of a first layer of silicon nitride of the present invention after deposition;
FIG. 3 is a schematic diagram of the first layer of silicon nitride after etching in accordance with the present invention;
FIG. 4 is a schematic diagram of a P-type metal of the present invention after evaporation;
FIG. 5 is a schematic view of a second layer of silicon nitride of the present invention after deposition;
FIG. 6 is a schematic diagram of a second layer of silicon nitride after etching in accordance with the present invention;
FIG. 7 is a schematic diagram after a sixth photolithography of the present invention;
FIG. 8 is a schematic diagram of the Ti/Au reflective layer of the present invention after evaporation;
FIG. 9 is a schematic view of the Ti/Au reflective layer of the present invention after stripping;
FIG. 10 is a schematic view of a fourth layer of silicon nitride after etching in accordance with the present invention;
FIG. 11 is a schematic view of an antireflection film of the present invention after deposition;
FIG. 12 is a schematic diagram of an indium post of the present invention after evaporation;
fig. 13 is a schematic diagram of the flip-chip interconnect of the present invention.
Detailed Description
As shown in fig. 1 to fig. 13, the preparation process of the InGaAs infrared focal plane detector provided by the present invention includes the following steps:
the first step is as follows: sequentially growing an N-type InP metal contact layer and an absorption layer In on an InP substrate by using MOCVD 0.53 Ga 0.47 As, cap layer N type InP, sacrificial layer InGaAs, form the epitaxial structure;
the second step is that: removing the sacrificial layer InGaAs by a wet method, and then depositing a first layer of silicon nitride on the cap layer N-type InP to form a passivation layer to prepare for first photoetching;
the third step: carrying out first photoetching and opening, carrying out dry etching on the first layer of silicon nitride, and carrying out zinc diffusion to form P-type doping;
the fourth step: depositing a second layer of silicon nitride, making a second photoetching hole, and etching the silicon nitride by a dry method to form an ohmic hole to prepare for evaporating a P-type metal;
the fifth step: making a third photoetching hole, evaporating and plating a P-type metal, and stripping to prepare for forming a P-type ohmic contact;
and a sixth step: performing a fourth photolithography to etch the first and second layers of silicon nitride by dry etching and the cap layer of N-type InP by wet etching to etch the absorption layer In 0.53 Ga 0.47 Preparing As;
the seventh step: performing a fifth photolithography to etch the In absorption layer 0.53 Ga 0.47 As, evaporating and stripping N-type metal to prepare for forming N-type ohmic contact;
eighth step: annealing the P-type metal and the N-type metal to form ohmic contact between the P-type metal and the N-type metal;
the ninth step: making a sixth photoetching opening, evaporating Ti/Au, and stripping to form a Ti/Au reflecting layer;
the tenth step: depositing a fourth layer of silicon nitride, performing a seventh photoetching, and etching the fourth layer of silicon nitride covering the P-type metal and the N-type metal by a dry method to prepare for evaporating the indium columns;
the eleventh step: thinning and polishing the InP substrate, and depositing an antireflection film on the polished InP substrate to increase the light transmittance;
the twelfth step: performing eighth photoetching, evaporating and stripping indium columns to form a diode array, and preparing for flip chip interconnection;
the thirteenth step: and the diode array and the reading circuit are in flip interconnection to form an InGaAs infrared focal plane detector chip.
The invention can ensure that unabsorbed light is secondarily absorbed by the InGaAs absorption layer after passing through the reflector, thereby improving the light absorption rate of the device and further improving the quantum efficiency.
The above embodiments are not limited to the technical solutions of the embodiments themselves, and the embodiments may be combined with each other into a new embodiment. The above embodiments are only for illustrating the technical solutions of the present invention and are not limited thereto, and any modification or equivalent replacement without departing from the spirit and scope of the present invention should be covered within the technical solutions of the present invention.
Claims (1)
1. A preparation process of a novel InGaAs infrared focal plane detector is characterized by comprising the following steps: the method comprises the following steps:
the first step is as follows: sequentially growing an N-type InP metal contact layer and an absorption layer In on an InP substrate by using MOCVD 0.53 Ga 0.47 Forming an epitaxial structure by using As, cap layer N-type InP and sacrificial layer InGaAs;
the second step is that: removing the InGaAs of the sacrificial layer by a wet method, and then depositing a first layer of silicon nitride on the N-type InP of the cap layer to form a passivation layer to prepare for first photoetching;
the third step: carrying out first photoetching to open a hole, carrying out dry etching on the first layer of silicon nitride, and carrying out zinc diffusion to form P-type doping;
the fourth step: depositing a second layer of silicon nitride, making a second photoetching hole, and etching the silicon nitride by a dry method to form an ohmic hole to prepare for evaporating a P-type metal;
the fifth step: making a third photoetching hole, evaporating and plating a P-type metal and stripping to prepare for forming a P-type ohmic contact;
and a sixth step: performing a fourth photolithography, dry etching the silicon nitride of the first and second layers, wet etching the N-type InP cap layer to etch the absorption layer In 0.53 Ga 0.47 Preparing As;
the seventh step: performing a fifth photolithography to etch the In absorption layer 0.53 Ga 0.47 As, evaporating and stripping N-type metal to prepare for forming N-type ohmic contact;
eighth step: annealing the P-type metal and the N-type metal to form ohmic contact between the P-type metal and the N-type metal;
the ninth step: making a sixth photoetching opening, evaporating Ti/Au and stripping to form a Ti/Au reflecting layer;
the tenth step: depositing a fourth layer of silicon nitride, performing a seventh photoetching, and etching the fourth layer of silicon nitride covering the P-type metal and the N-type metal by a dry method to prepare for evaporating the indium columns;
the eleventh step: thinning and polishing the InP substrate, and depositing an antireflection film on the polished InP substrate to increase the light transmittance;
the twelfth step: performing eighth photoetching, evaporating indium columns and stripping to form a diode array, and preparing for flip chip bonding interconnection;
the thirteenth step: the diode array and the reading circuit are connected in a flip-chip manner to form an InGaAs infrared focal plane detector chip; silicon nitride is arranged on the upper side and the lower side of the Ti/Au reflecting layer on the cross section and between the Ti/Au reflecting layer and the indium columns on the P-type metal and the P-type metal.
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| CN112071956B true CN112071956B (en) | 2022-08-16 |
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| CN115425041B (en) * | 2022-09-26 | 2024-06-11 | 山西国惠光电科技有限公司 | Preparation method of InGaAs infrared focal plane detector for inhibiting electrical crosstalk |
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| JPS57113292A (en) * | 1980-12-29 | 1982-07-14 | Fujitsu Ltd | Semiconductor light sensing device |
| KR100366046B1 (en) * | 2000-06-29 | 2002-12-27 | 삼성전자 주식회사 | Method of manufacturing avalanche phoetodiode |
| CN100502022C (en) * | 2005-12-15 | 2009-06-17 | 三洋电机株式会社 | Semiconductor device |
| CN100541831C (en) * | 2007-12-28 | 2009-09-16 | 中国科学院上海技术物理研究所 | Back irradiation arsenic indium table alignment or planar array detector chip and preparation technology |
| US9082922B2 (en) * | 2010-08-18 | 2015-07-14 | Dayan Ban | Organic/inorganic hybrid optical amplifier with wavelength conversion |
| CN104022181B (en) * | 2014-05-26 | 2016-05-18 | 武汉电信器件有限公司 | A kind of preparation method of photodiode |
| CN104362196A (en) * | 2014-11-25 | 2015-02-18 | 苏州矩阵光电有限公司 | InGaAs infrared detector and preparing method thereof |
| CN105118886A (en) * | 2015-08-31 | 2015-12-02 | 中国科学院半导体研究所 | High-response avalanche photodiode fabrication method |
| US10825857B2 (en) * | 2016-09-29 | 2020-11-03 | Yantai Raytron Technology Co., Ltd | Pixel for uncooled infrared focal plane detector and preparation method therefor |
| CN106784165B (en) * | 2017-01-24 | 2018-03-02 | 烟台睿创微纳技术股份有限公司 | A kind of novel double-layer non-refrigerated infrared focal plane probe dot structure and preparation method thereof |
| CN106847950B (en) * | 2017-04-18 | 2018-05-15 | 烟台睿创微纳技术股份有限公司 | Ion implanting prepares infrared detector of Titanium oxide electrode and preparation method thereof |
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