CN112071926B - Infrared detector and preparation method thereof - Google Patents

Infrared detector and preparation method thereof Download PDF

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CN112071926B
CN112071926B CN202010875005.4A CN202010875005A CN112071926B CN 112071926 B CN112071926 B CN 112071926B CN 202010875005 A CN202010875005 A CN 202010875005A CN 112071926 B CN112071926 B CN 112071926B
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nano
array
photodiode
electrode
infrared detector
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CN112071926A (en
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杨为家
邱晨
吴质朴
何畏
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Shenzhen Orient Components Co ltd
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Shenzhen Orient Components Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G02—OPTICS
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    • G02B5/00—Optical elements other than lenses
    • G02B5/008—Surface plasmon devices
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
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    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
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    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System

Abstract

The invention discloses an infrared detector and a preparation method thereof, wherein the preparation method comprises the following steps: a photodiode including an upper surface and a lower surface; a thin film disposed on an upper surface of the photodiode; the nano dots are arranged on the surface of the film; the first electrode is arranged on the surface of the nanodot; the nano-pillar array is arranged on the lower surface of the photodiode; and the second electrode comprises a nanopore array which is matched and connected with the nano column array, and the second electrode is connected to the lower surface of the photodiode through the nanopore array. The metal nano-pore array has a surface plasmon enhancement effect, can enhance the absorption efficiency of infrared light, and can adjust the pore diameter and the distribution thereof according to different absorption wave bands, thereby achieving the best effect. The nano-dots have a relatively obvious quantum effect, and can improve the absorption efficiency and sensitivity of the infrared detector to infrared light.

Description

Infrared detector and preparation method thereof
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an infrared detector and a preparation method thereof.
Background
At present, Si-based Photodiodes (PD) and Avalanche Photodiodes (APD) have the advantages of low cost, mature process and the like, are widely applied to the field of infrared detection, and are one of the mainstream of the current infrared detectors.
However, the efficiency and sensitivity of Si-based Photodiodes (PDs), avalanche mode photodiodes (APDs) are not ideal, limited by the materials, device structure, and fabrication process factors. The existing technology for improving the efficiency and sensitivity of Si-based Photodiodes (PD) and Avalanche Photo Diodes (APD) has the defects of relatively complex manufacturing process and high cost, which becomes an important factor restricting the development of infrared detectors.
Disclosure of Invention
The present application is directed to solving, at least to some extent, one of the technical problems in the related art. Therefore, the infrared detector has the advantages of high efficiency and high sensitivity; and the preparation method of the infrared detector has the advantages of simple manufacturing process and low cost.
The technical scheme adopted by the invention for solving the problems is as follows:
in one aspect, an embodiment of the present invention provides an infrared detector, including:
a photodiode including an upper surface and a lower surface;
a thin film disposed on the upper surface of the photodiode;
the nanodots are arranged on the surface of the film;
the first electrode is arranged on the surface of the nanodot;
a nanopillar array disposed on the lower surface of the photodiode;
and the second electrode comprises a nano-pore array matched and connected with the nano-pillar array, and is connected to the lower surface of the photodiode through the nano-pore array.
Compared with the prior art, the invention adopts the photodiode as the main device of the infrared detector, and the photodiode has the advantages of low cost, mature process and the like, thereby being beneficial to the mass production of the infrared detector; secondly, the upper surface of the photodiode is provided with a film, and the film is provided with nano-dots, so that the quantum effect is remarkable, and the absorption efficiency and sensitivity of infrared light of the photodiode can be improved; and the second electrode is provided with a nano-pore array, the nano-pore array has a surface plasmon enhancement effect, the absorption efficiency of infrared light can be enhanced, and the pore diameter and the distribution thereof can be adjusted according to different absorption wave bands, so that the optimal effect is achieved. It can be seen that the effect of nanodots and nanopore arrays is: the absorption efficiency and sensitivity of the infrared light of the photodiode can be improved, and the performance of the infrared detector is improved.
Optionally, in an embodiment of the present invention, the nanopore array includes nanopores, the nanopores are circular or hexagonal in shape, have a diameter of 30 to 900nm, and have a center-to-center distance of 80 to 1800 nm. According to different absorption wave bands, the aperture and the distribution thereof can be adjusted, thereby achieving the best effect of absorbing infrared light.
Optionally, in an embodiment of the present invention, the nanodots are composed of one or more of Si, Ge, GeSi, CuS, MoS2, and CdS, which may constitute a composite photocatalyst, which may improve absorption efficiency and sensitivity of infrared light of the photodiode.
Optionally, in an embodiment of the present invention, the nanopillar array includes nanopillars, the nanopillars have a height of 50 to 500nm, a diameter of 30 to 900nm, and a center-to-center distance between adjacent nanopillars is 80-1800 nm. According to different absorption wave bands, the parameters and the distribution of the nano-pillars can be adjusted, so that the optimal effect of absorbing infrared light is achieved.
Optionally, in an embodiment of the present invention, the thickness of the thin film is 2 to 10nm, which helps to generate a more significant quantum effect.
In a second aspect, an embodiment of the present invention provides a method for manufacturing a diode, which is applied to an infrared detector including a photodiode, a thin film, a nanodot, a first electrode, a nanopillar array, and a second electrode, the method including:
bonding the film to the upper surface of the photodiode;
forming the nanodots on the surface of the thin film;
forming the first electrode on the surface of the nanodots;
etching the nanopillars on the lower surface of the photodiode to form the nanopillar array;
forming the second electrode with the nanopore array in mating connection with the nanopillar array.
Compared with the method for preparing the diode in the traditional technology, the method provided by the invention has the advantages that the simple and low-cost method is adopted to effectively improve the performances of the Si-based PD and APD.
Compared with the method for preparing the diode in the traditional technology, the method provided by the invention has the advantages that the simple and low-cost method is adopted to effectively improve the performances of the Si-based PD and APD. The metal nano-pore array has a surface plasmon enhancement effect, can enhance the absorption efficiency of infrared light, and can adjust the pore size and the distribution thereof according to different absorption wave bands, thereby achieving the best effect. The nano-dots have a relatively obvious quantum effect, and can improve the absorption efficiency and sensitivity of the infrared detector to infrared light.
Optionally, in an embodiment of the present invention, the nanodots are formed on the surface of the thin film by sputtering, and the method includes the steps of:
introducing inert gas into a magnetron sputtering annealing furnace;
rapidly heating the film;
annealing the thin film to form the nanodots.
The method has the advantages of high deposition speed and small damage to the film layer; the thin film obtained by sputtering is well combined with the substrate; the film obtained by sputtering has high purity and good compactness; the thickness of the coating can be accurately controlled, and the particle size of the formed film can be controlled by changing parameter conditions.
Optionally, in an embodiment of the present invention, the first electrode is etched on the surface of the thin film, and the first electrode is formed on the surface of the nanodot based on mask etching.
Optionally, in an embodiment of the present invention, the nanopillar is etched on the lower surface of the photodiode to form the nanopillar array, and the steps of the method include:
uniformly coating photoresist on the lower surface of the photodiode;
exposing the lower surface of the photodiode to form a nanopillar pattern;
performing solution etching on the lower surface of the photodiode to form the nanopillar array.
Precise, fine and complex thin-layer patterns are manufactured on the surface of the device through etching, and the accuracy of the nano-pillar array is ensured.
Optionally, in an embodiment of the present invention, the formation of the nanopore array in the second electrode, which is connected to the nanopillar array in a matching manner, includes the following steps:
coating a layer of metal molten slurry with the thickness larger than the height of the nano-pillars on the surface of the nano-pillar array;
and introducing protective gas and crystallizing to form the second electrode with the nanopore array.
The metal nano-pore array has a surface plasmon enhancement effect, can enhance the absorption efficiency of infrared light, and can adjust the pore size and the distribution thereof according to different absorption wave bands, thereby achieving the best effect of absorbing infrared light.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The following description of the preferred embodiments of the present invention will be made in conjunction with the accompanying drawings.
FIG. 1 is a schematic diagram of an infrared detector according to an embodiment of the present invention;
FIG. 2 is a flow chart of a method of making an infrared detector according to an embodiment of the invention;
FIG. 3 is a flow chart of forming nanodots according to an embodiment of the present invention;
FIG. 4 is a flow chart of forming a nanopillar array according to an embodiment of the present invention;
fig. 5 is a flow chart of forming a nanopore array in cooperative connection with a nanopillar array according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to the present preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as the upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, unless otherwise explicitly limited, terms such as arrangement, installation, connection and the like should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific contents of the technical solutions.
The embodiments of the present invention will be further explained with reference to the drawings.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an infrared detector according to an embodiment of the present invention.
In one aspect, an embodiment of the present invention provides an infrared detector, including:
a photodiode 100 comprising an upper surface 101 and a lower surface 102;
a thin film 110 disposed on the upper surface 101 of the photodiode 100;
nanodots 111 disposed on the surface of the thin film 110;
a first electrode 120 disposed on the surface of the nanodot 111;
a nanopillar array 130 disposed on the lower surface 102 of the photodiode 100;
and a second electrode 140 including a nanopore array 141 cooperatively coupled to the nanopillar array 130, the second electrode 140 being coupled to the lower surface 102 of the photodiode 100 through the nanopore array 141.
Compared with the prior art, the embodiment adopts the photodiode 100 as a main device of the infrared detector, and the photodiode 100 has the advantages of low cost, mature process and the like, and is beneficial to the mass production of the infrared detector; secondly, the film 110 is arranged on the upper surface 101 of the photodiode 100, and the nano-dots 111 are arranged on the film 110, so that the quantum effect is remarkable, and the absorption efficiency and the sensitivity of infrared light of the photodiode 100 can be improved; in addition, the second electrode 140 is provided with the nanopore array 141, the nanopore array 141 has a surface plasmon enhancement effect, the absorption efficiency of infrared light can be enhanced, and the pore size and the distribution thereof can be adjusted according to different absorption bands, so that the optimal effect is achieved. It can be seen that the nanodots 111 and the nanopore array 141 function to: the absorption efficiency and sensitivity of the infrared light of the photodiode 100 can be improved, and the performance of the infrared detector can be improved.
Alternatively, in one embodiment of the present invention, the nanopore array 141 comprises nanopores having a circular or hexagonal shape with a diameter of 30 to 900nm and a center-to-center spacing between adjacent nanopores of 80 to 1800 nm. Compared with a thin film material consisting of nano particles and incapable of measuring a field emission signal, the vertically arranged circular or hexagonal nano-hole array shows excellent field emission performance, and the pore diameter and the distribution thereof can be adjusted according to different absorption wave bands, so that the optimal effect of absorbing infrared light is achieved.
Alternatively, in one embodiment of the present invention, the nanodots 111 are made of Si, Ge, GeSi, CuS, MoS2And CdS, which can form composite photocatalyst to improve the infrared light absorption efficiency and sensitivity of photodiode.
Alternatively, in one embodiment of the present invention, the nanopillar array 130 comprises nanopillars having a height of 50 to 500nm, a diameter of 30 to 900nm, and a center-to-center spacing between adjacent nanopillars of 80-1800 nm. According to different absorption wave bands, the parameters and the distribution of the nano-pillars can be adjusted, so that the optimal effect of absorbing infrared light is achieved.
Alternatively, in one embodiment of the present invention, the thickness of the thin film 110 is 2 to 10 nm. Which contributes to producing a more significant quantum effect.
Referring to fig. 2, fig. 2 is a flowchart of a method of manufacturing an infrared detector according to an embodiment of the present invention;
in a second aspect, an embodiment of the present invention provides a method for manufacturing a diode, which is applied to an infrared detector, where the infrared detector includes a photodiode 100, a thin film 110, a nanodot 111, a first electrode 120, a nanopillar array 130, and a second electrode 140, and the method includes:
s100, adhering the film 110 to the upper surface 101 of the photodiode 100;
s200, forming nanodots 111 on the surface of the film 110;
s300, forming a first electrode 120 on the surface of the nanodot 111;
s400, etching the nano-pillars on the lower surface 102 of the photodiode 100 to form a nano-pillar array 130;
s500, forming a second electrode 140 having a nanopore array 141 cooperatively connected with the nanopillar array 130.
Compared with the method for preparing the diode in the traditional technology, the method provided by the invention has the advantages that the performance of the infrared detector is effectively improved by adopting a simple and low-cost method. On one hand, the metal nano-pore array has a surface plasmon enhancement effect, can enhance the absorption efficiency of infrared light, and can adjust the pore size and the distribution thereof according to different absorption wave bands, thereby achieving the best effect. On the other hand, the nano-dots have a relatively obvious quantum effect, can play a role in enhancing the carrier mobility, and improve the absorption efficiency and the sensitivity of the infrared detector to infrared light.
Referring to fig. 3, fig. 3 is a flowchart of forming nanodots according to an embodiment of the present invention.
Optionally, in an embodiment of the present invention, the nanodots 111 are formed on the surface of the thin film 110 by sputtering, and the steps are as follows:
s210, introducing inert gas into a magnetron sputtering annealing furnace;
s220, rapidly heating the film 110;
and S230, annealing the film 110 to form the nanodots 111.
In the above embodiment, the nanodots 111 are formed based on magnetron sputtering, wherein the deposition speed is high and the damage to the film layer is small; the thin film obtained by sputtering is well combined with the substrate; the film obtained by sputtering has high purity and good compactness; the thickness of the coating can be accurately controlled, and the particle size of the formed film can be controlled by changing parameter conditions.
Preferably, in one embodiment of the present invention, an inert gas is introduced into the magnetron sputtering annealing furnace at a rate of 1 to 3sccm, and the introduction of the inert gas changes the pressure in the furnace, thereby changing the reaction rate.
Preferably, in one embodiment of the present invention, the thin film 110 is rapidly heated to 500 to 1200 ℃ during the process of forming nanodots by sputtering on the surface thereof.
Preferably, in one embodiment of the present invention, the thin film is annealed for 30 to 180 seconds to form the nanodots, and the annealing time affects the growth thickness of the nanodots, and can be controlled to reach the desired growth thickness of the nanodots.
Alternatively, in an embodiment of the present invention, the first electrode 120 is etched on the surface of the thin film 110, and the first electrode 120 is formed around the nanodots 111 by a mask etching method.
Referring to fig. 4, fig. 4 is a flowchart of forming a nanopillar array according to an embodiment of the present invention.
Optionally, in an embodiment of the present invention, the nanopillars are etched on the lower surface 102 of the photodiode 100 to form the nanopillar array 130, which includes the following steps:
s410, uniformly coating photoresist on the lower surface 102 of the photodiode 100;
s420, exposing the lower surface 102 of the photodiode 100 to form a nano-pillar pattern;
and S430, performing solution etching on the lower surface 102 of the photodiode 100 to form the nanopillar array 130.
In the embodiment, the precision, the fine and the complex thin-layer patterns are manufactured on the surface of the device through etching, so that the precision of the nano-pillar array is ensured.
Referring to fig. 5, fig. 5 is a flow chart of forming a nanopore array coupled to a nanopillar array according to an embodiment of the present invention.
Alternatively, in an embodiment of the present invention, a nanopore array 141 is formed in the second electrode 140, and is coupled to the nanopillar array 130, and the steps are as follows:
s510, coating a layer of metal molten slurry with the thickness larger than the height of the nano-pillars on the surface of the nano-pillar array 130;
and S520, introducing protective gas and crystallizing to form the second electrode 140 with the nanopore array 141.
In the above embodiment, the metal nanopore array has a surface plasmon enhancement effect, and can enhance the absorption efficiency of infrared light, and the pore size and the distribution thereof can be adjusted according to different absorption bands, thereby achieving the best effect of absorbing infrared light. In order to reduce production costs and improve emission efficiency, the second electrode having the metal nanopore array is optimally made of silver or aluminum. The top end of the nano-pillar array 130 has a very large fringe field, so that the photodiode generates an avalanche multiplication effect, the quantum efficiency of the infrared detector is greatly improved, the noise and dark current of the silicon infrared detector are reduced, and the reliability of the device is improved.
Preferably, in an embodiment of the present invention, during the formation of the nanopore array 141 coupled to the nanopillar array 130 in the second electrode 140, a shielding gas is introduced and crystallized at a temperature of 300 to 500 ℃ to form the second electrode having the nanopore array.
While the preferred embodiments and basic principles of the present invention have been described in detail, it will be understood by those skilled in the art that the invention is not limited to the embodiments, but is intended to cover various modifications, equivalents and alternatives falling within the scope of the invention as claimed.

Claims (10)

1. An infrared detector, comprising:
a photodiode including an upper surface and a lower surface;
a thin film disposed on the upper surface of the photodiode;
the nanodots are arranged on the surface of the film;
the first electrode is arranged on the surface of the nanodot;
a nanopillar array disposed on the lower surface of the photodiode;
and the second electrode comprises a nano-pore array matched and connected with the nano-pillar array, and is connected to the lower surface of the photodiode through the nano-pore array.
2. An infrared detector according to claim 1, characterized in that: the nanopore array comprises nanopores, the shape of each nanopore is circular or hexagonal, the diameter of each nanopore is 30-900 nm, and the center distance between every two adjacent nanopores is 80-1800 nm.
3. An infrared detector according to claim 1, characterized in that: the nanodots are composed of one or more of Si, Ge, GeSi, CuS, MoS2 and CdS.
4. An infrared detector according to claim 1, characterized in that: the nano-pillar array comprises nano-pillars, the height of each nano-pillar is 50-500 nm, the diameter of each nano-pillar is 30-900 nm, and the center distance between every two adjacent nano-pillars is 80-1800 nm.
5. An infrared detector according to claim 1, characterized in that: the thickness of the film is 2 to 10 nm.
6. A method for preparing a diode, which is applied to an infrared detector, wherein the infrared detector comprises a photodiode, a thin film, a nano dot, a first electrode, a nano-pillar array and a second electrode, and the method comprises the following steps:
bonding the film on the upper surface of the photodiode;
forming the nanodots on the surface of the thin film;
forming the first electrode on the surface of the nanodots;
etching the nano-pillars on the lower surface of the photodiode to form the nano-pillar array;
forming the second electrode with the nanopore array in mating connection with the nanopillar array.
7. The method of claim 6, wherein the nanodots are formed on the surface of the thin film by sputtering, and the method further comprises:
introducing inert gas into a magnetron sputtering annealing furnace;
heating the film;
annealing the thin film to form the nanodots.
8. The method of claim 6, wherein the first electrode is etched on the surface of the thin film, and the method further comprises: and forming the first electrode on the surface of the nano-dots based on mask plate etching.
9. The method of claim 6, wherein the nanopillars are etched on the lower surface of the photodiode to form the nanopillar array, wherein:
uniformly coating photoresist on the lower surface of the photodiode;
exposing the lower surface of the photodiode to form a nanopillar pattern;
performing solution etching on the lower surface of the photodiode to form the nanopillar array.
10. The method of claim 6, wherein the nanopore array is formed in the second electrode in mating connection with the nanopillar array, and wherein:
coating a layer of metal molten slurry with the thickness larger than the height of the nano-pillars on the surface of the nano-pillar array;
and introducing protective gas and crystallizing to form the second electrode with the nanopore array.
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