CN112068147B - Integrated chip and electronic device for target detection - Google Patents
Integrated chip and electronic device for target detection Download PDFInfo
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- CN112068147B CN112068147B CN202011114463.2A CN202011114463A CN112068147B CN 112068147 B CN112068147 B CN 112068147B CN 202011114463 A CN202011114463 A CN 202011114463A CN 112068147 B CN112068147 B CN 112068147B
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- 238000001514 detection method Methods 0.000 title claims abstract description 17
- 230000003287 optical effect Effects 0.000 claims abstract description 42
- 238000005259 measurement Methods 0.000 claims abstract description 33
- 230000008878 coupling Effects 0.000 claims abstract description 16
- 238000010168 coupling process Methods 0.000 claims abstract description 16
- 238000005859 coupling reaction Methods 0.000 claims abstract description 16
- 230000010287 polarization Effects 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000010363 phase shift Effects 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000010309 melting process Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021532 Calcite Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/32—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
- G01S17/34—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated using transmission of continuous, frequency-modulated waves while heterodyning the received signal, or a signal derived therefrom, with a locally-generated signal related to the contemporaneously transmitted signal
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/50—Systems of measurement based on relative movement of target
- G01S17/58—Velocity or trajectory determination systems; Sense-of-movement determination systems
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/491—Details of non-pulse systems
- G01S7/4912—Receivers
- G01S7/4913—Circuits for detection, sampling, integration or read-out
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Networks & Wireless Communication (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Electromagnetism (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Optical Integrated Circuits (AREA)
Abstract
An integrated chip and an electronic device for object detection are disclosed. The integrated chip includes: a measuring light receiving unit for coupling measuring light reflected from a target into the integrated chip, and including a micro lens and a nano antenna; the coupler unit is used for mixing the reference light and the measuring light and outputting a first coupling optical signal and a second coupling optical signal; the balanced photoelectric detector unit is used for performing photoelectric conversion on the first coupled optical signal and the second coupled optical signal to output an electric signal, and the electric signal is used for determining information of a target; and an optical waveguide for connecting the measurement light receiving unit to the coupler unit and connecting the coupler unit to the balanced photodetector unit.
Description
Technical Field
The present disclosure relates to the field of semiconductor technology, and in particular, to an integrated chip and an electronic device for target detection.
Background
Laser Detection and ranging (Light Detection AND RANGING), also known as a laser radar, is a remote sensing technology that samples the environment at a high speed with a rotating laser beam to obtain three-dimensional depth information. Similar to conventional microwave radars, lidar also works on the principle of transmitting and receiving electromagnetic waves reflected by a target, however, the operating wavelength of lidar is much smaller than the former, which gives it inherently higher resolution accuracy, greater instantaneous bandwidth, and greater integration potential. Vehicles (e.g., automobiles, trucks, construction equipment, farm equipment, automated factory equipment) are increasingly equipped with sensors that can provide information to enhance or automate vehicle operation. Exemplary sensors include radio detection and ranging (radar) systems, cameras, microphones, and light detection and ranging (lidar) systems.
Currently, the development of laser modulation technology and narrow linewidth laser technology has tended to mature. However, existing lidar systems are often formed of discrete components that are not compact and have poor tamper resistance.
Disclosure of Invention
It would be advantageous to provide a mechanism that alleviates, mitigates or even eliminates one or more of the above problems.
According to one aspect of the present disclosure, there is provided an integrated chip for target detection, including: a measuring light receiving unit for coupling measuring light reflected from the target into the integrated chip, and including a microlens and a nanoantenna; a coupler unit for mixing the reference light and the measurement light and outputting a first coupled light signal and a second coupled light signal; a balanced photodetector unit for photoelectrically converting the first and second coupled optical signals to output an electrical signal for determining information of the target; and an optical waveguide for connecting the measurement light receiving unit to the coupler unit and connecting the coupler unit to the balanced photodetector unit.
According to another aspect of the present disclosure, there is provided an electronic device including the integrated chip as described above.
These and other aspects of the disclosure will be apparent from and elucidated with reference to the embodiments described hereinafter.
Drawings
Further details, features and advantages of the present disclosure are disclosed in the following description of exemplary embodiments, with reference to the following drawings, wherein:
FIG. 1 is a schematic diagram of the structure of an integrated chip according to an exemplary embodiment of the present disclosure;
Fig. 2 is a schematic view of an example structure of the measurement light receiving unit in fig. 1 according to an example embodiment of the present disclosure;
Fig. 3 is a schematic diagram of an example structure of the nano-antenna in fig. 2 according to an example embodiment of the present disclosure;
FIG. 4 is a schematic diagram of the structure of an integrated chip according to another exemplary embodiment of the present disclosure; and
Fig. 5 is a schematic diagram of a structure of a polarizing beam splitter according to an exemplary embodiment of the present disclosure.
Detailed Description
It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.
Spatially relative terms, such as "below …," "below …," "lower," "below …," "above …," "upper," and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "under" or "beneath" other elements or features would then be oriented "over" the other elements or features. Thus, the exemplary terms "below …" and "below …" may encompass both orientations that are above … and below …. Terms such as "before …" or "before …" and "after …" or "followed by" may similarly be used, for example, to indicate the order in which light passes through the elements. The device may be oriented in other ways (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. In addition, it will also be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items, and the phrase "at least one of a and B" means a alone, B alone, or both a and B.
It will be understood that when an element or layer is referred to as being "on," "connected to," "coupled to," or "adjacent to" another element or layer, it can be directly on, connected to, coupled to, or adjacent to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly connected to," "directly coupled to," or "directly adjacent to" another element or layer, there are no intervening elements or layers present. However, in no event "on …" or "directly on …" should be construed as requiring one layer to completely cover an underlying layer.
Embodiments of the present disclosure are described herein with reference to schematic illustrations (and intermediate structures) of idealized embodiments of the present disclosure. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present disclosure should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present disclosure.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and/or the present specification and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As used herein, the term "substrate" may refer to a substrate of a diced wafer, or may refer to a substrate of an uncut wafer. Similarly, the terms chip and die may be used interchangeably unless such an interchange would cause a conflict. It should be understood that the term "layer" includes films and should not be construed to indicate vertical or horizontal thickness unless otherwise indicated.
In order to realize ranging or speed detection, the laser radar system can emit frequency modulation continuous waves (Frequency Modulated Continuous Wave, FMCW), and interfere with the emitted local oscillation signals by utilizing the received echo signals, so as to obtain difference frequency signals of ranging information, and further utilize the difference frequency signals to calculate the distance and the speed.
However, as described above, the existing lidar system is generally formed of discrete components, which are not compact in structure and poor in tamper resistance. More specifically, the various optical and electrical components in the lidar system may be fabricated separately and then wired accordingly for each discrete component to achieve electrical connection and optical coupling between the components. However, the connection mode of the laser radar system formed by the method is complex, and disconnection or short circuit among all components possibly exists, so that the laser radar system is unstable in operation and poor in anti-interference capability. On the other hand, the laser radar system manufactured by the discrete components occupies a large space and is not compact in structure.
According to an exemplary embodiment of the present disclosure, an integrated chip for object detection is provided.
Fig. 1 is a schematic structural view of an integrated chip 100 according to an exemplary embodiment of the present disclosure. As shown in fig. 1: the integrated chip 100 includes: a measuring light receiving unit 110, the measuring light receiving unit 110 for coupling measuring light reflected from a target into the integrated chip 100, and including a micro lens and a nano antenna; a coupler unit 120 for mixing the reference light and the measurement light, and outputting a first coupled light signal and a second coupled light signal by the coupler unit 120; a balanced photodetector unit 130, the balanced photodetector unit 130 being configured to photoelectrically convert the first coupled optical signal and the second coupled optical signal to output an electrical signal, wherein the electrical signal is used to determine information of a target; and an optical waveguide for connecting the measurement light receiving unit 110 to the coupler unit 120 and connecting the coupler unit 120 to the balance photodetector unit 130.
By the integrated chip, the measuring light receiving unit, the coupler unit and the balance photoelectric detector unit can be integrated in the same chip, so that the object detection system with compact structure and high integration level can be realized. On the other hand, by making the measuring light receiving unit include a microlens and a nanoantenna to couple the measuring light into the integrated chip, the receiving angle of the light can be increased, the amount of light incoming can be increased, and thus the spatial light receiving efficiency can be improved.
Fig. 2 is a schematic diagram of an example structure 200 of the measurement light receiving unit in fig. 1 according to an example embodiment of the present disclosure. As shown in fig. 2, a microlens 201 is located above a nanoantenna 202, and measurement light L enters the nanoantenna 202 after passing through the microlens 201, and enters an optical waveguide via the nanoantenna 202. Depending on the materials of other components fabricated on the integrated chip along with the microlens 201 and nanoantenna 202, a corresponding medium may be disposed between the microlens 201 and nanoantenna 202.
The measuring light receiving unit 200 shown in fig. 2 may be used instead of the light receiving structure in the form of an array, so that the design of the entire integrated chip can be simplified by simplifying the measuring light receiving unit. As shown by the light L, even when the incident angle of the light is large, the microlens 201 can deflect it onto the nanoantenna 202, and therefore the measuring light receiving unit shown in fig. 2 can increase the light receiving angle, and thus the amount of light input, and can receive the measuring light in a larger angle range.
In some embodiments, the microlenses may be hemispheric structures formed of SiO 2, polyimide, or benzocyclobutene. By forming the microlens using SiO 2, polyimide, or benzocyclobutene, the formation process and material of the microlens can be made compatible with existing semiconductor processes, and thus, the formation process of the microlens can be simplified.
In some embodiments, the microlenses may be formed using a photoresist hot melt process.
Fig. 3 is a schematic diagram of an example structure of the nano-antenna in fig. 2 according to an example embodiment of the present disclosure. As shown in fig. 3, in some embodiments, nanoantenna 300 may be formed of Si. The nano-antenna 300 includes an antenna waveguide 310 and an antenna grating 320. The antenna waveguide 310 is integrally formed with the antenna grating 320, and the antenna grating 320 is distributed along a direction S in which the antenna waveguide 310 extends. The antenna grating 320 includes at least two curved portions 321, the at least two curved portions 321 are curved toward one side of the antenna waveguide 310, and a tangential direction T at a midpoint of each of the at least two curved portions 321 is perpendicular to a direction S in which the antenna waveguide 310 extends.
Thus, the nano-antenna can receive the measurement light received by the microlens in a larger range, and thus, the setting of the nano-antenna can further increase the light receiving angle.
Fig. 4 is a schematic structural view of an integrated chip 400 according to another exemplary embodiment of the present disclosure. The integrated chip 400 as shown in fig. 4 may include: a measuring light receiving unit 410 for coupling measuring light reflected from a target into the integrated chip 400 and including a micro lens and a nano antenna; a coupler unit 420 for mixing the reference light and the measurement light, and outputting a first coupled optical signal E 1 (t) and a second coupled optical signal E 2 (t); a balanced photodetector unit 430, the balanced photodetector unit 430 being configured to photoelectrically convert the first and second coupled optical signals E 1 (t) and E 2 (t) to output electrical signals I 1 (t) and I 2 (t), the electrical signals I 1 (t) and I 2 (t) being used to determine information of a target; and an optical waveguide 460 for connecting the measurement light receiving unit 410 to the coupler unit 420 and connecting the coupler unit 420 to the balanced photodetector unit 430.
As shown in fig. 4, the integrated chip 400 may further include a reference light receiving unit 440, as compared to the integrated chip 100 shown in fig. 1, the reference light receiving unit 440 being for coupling reference light into the integrated chip 400. In some embodiments, the reference light receiving unit 440 includes a grating coupler. The grating coupler may more particularly be a vertically coupled grating coupler.
Illustratively, the reflective characteristics of the reflective grating and the distributed bragg mirror may be utilized to highly reflect light from the sides and bottom of the grating coupler, respectively. The space between the reflective grating and the coupling grating is reasonably selected to enable the reflected light of the two groups of gratings to realize destructive interference so as to weaken the negative second-order reflection existing when the coupling grating realizes vertical coupling, thereby designing the high-efficiency vertical coupling type grating coupler.
With continued reference to fig. 4, in some embodiments, the coupler unit 420 includes a 2 x2 coupler for mixing the reference light and the measurement light such that the output first coupled light signal E 1 (t) and the second coupled light signal E 2 (t) have equal amplitudes and a predetermined phase shift between the first coupled light signal E 1 (t) and the second coupled light signal E 2 (t).
In some embodiments, the reference light and the measurement light are input to the coupler unit 420, respectively, and the coupler unit 420 mixes the reference light and the measurement light by the principle of interference and distributes the light energy of both. For example, the output first coupled-optical signal E 1 (t) and second coupled-optical signal E 2 (t) are two optical signals of equal amplitude with a predetermined phase shift therebetween, for example, a phase shift of pi (180 °).
As shown in fig. 4, the first coupled optical signal E 1 (t) and the second coupled optical signal E 2 (t) respectively enter the balanced coupler unit 430 to be photoelectrically converted, so that a first photocurrent I 1 (t) and a second photocurrent I 2 (t) can be obtained. Based on the first photocurrent I 1 (t) and the second photocurrent I 2 (t), information of the object to be measured can be obtained.
In some embodiments, the balanced photodetector unit 430 includes first and second photodetectors 431, 432 that are of uniform parameters and a plurality of external electrodes 441, 442 electrically connected to the first and second photodetectors 431, 432. The first and second photodetectors 431 and 432 may be formed based on the same process and disposed adjacent to each other in space.
Illustratively, the first and second photodetectors 431 and 432 may employ silicon germanium photodetectors. The external electrode 441 and the external electrode 442 may be used to connect an external signal processing circuit.
The first photoelectric detector and the second photoelectric detector are formed based on the same process and are arranged adjacently in space, so that the consistency of the process of the detectors can be improved, the first photoelectric detector and the second photoelectric detector with the consistent parameters can be conveniently realized, and common mode interference can be effectively eliminated when coherent detection is carried out.
With continued reference to fig. 4, the integrated chip 400 may further include a polarizing beam splitter unit 450 as compared to the integrated chip 100 shown in fig. 1. The polarizing beam splitter unit 450 includes a first polarizing beam splitter 451 and a second polarizing beam splitter 452. The first polarization beam splitter 451 is for dividing the measurement light into first polarized light and second polarized light having orthogonal polarization states, and inputting one of the first polarized light and the second polarized light to the coupler unit 420. The second polarization beam splitter 452 is for dividing the reference light into third polarized light and fourth polarized light having orthogonal polarization states, and inputting one of the third and fourth polarized light to the coupler unit 420. The polarization state of the one of the first and second polarized light inputted to the coupler unit 420 is the same as the polarization state of the one of the third and fourth polarized light inputted to the coupler unit 420.
The first polarizing beam splitter and the second polarizing beam splitter in the polarizing beam splitter unit are capable of dividing incident unpolarized light into two beams of polarized light having orthogonal polarization states, respectively, and inputting measurement light and reference light having identical polarization states to the coupler unit. Therefore, the polarization of the system can be improved, and the influence of noise is reduced, so that the anti-interference capability of the chip is improved.
In order to facilitate understanding of the operation principle of the polarizing beam splitter, it will be described with reference to fig. 5. Fig. 5 is a schematic diagram of a structure of a polarizing beam splitter according to an exemplary embodiment of the present disclosure.
Illustratively, a piece of calcite may be machined into a rectangular cuboid, cut into two wedges, and then glued together to form a polarizing beam splitter 551 as shown in fig. 5. The bonding surface thereof is a beam splitting surface BS.
When incident light E enters from the left side of the polarization beam splitter 551, it is split on the beam splitting surface BS, wherein one beam is transmitted light E e that continues to transmit along the direction of the incident light, the transmitted light and the incident light are located on the same line, the other beam is reflected light E O that reflects and transmits on the beam splitting surface BS, and the propagation direction of the reflected light E O and the propagation direction of the incident light E conform to the law of reflection.
As can be seen from fig. 5, the reflected light E O and the transmitted light E e generated by the beam splitting are linearly polarized light, and the incident light is split into two linearly polarized light beams with orthogonal polarization directions after passing through the polarization beam splitter.
In the above figures, only one polarizing beam splitter is taken as an example, and the operation of the polarizing beam splitter is described. For example, with respect to the polarization beam splitter 551 (first polarization beam splitter), first polarized light (reflected light E O) and second polarized light (transmitted light E e) orthogonal in polarization state are formed with respect to the incident light. Similarly, for another polarizing beam splitter (second polarizing beam splitter), third polarized light and fourth polarized light with orthogonal polarization states may be formed. In order to achieve coherent detection, for example, one of the third polarized light and the first polarized light and the second polarized light having the same polarization state as the third polarized light may be selectively inputted to the coupler unit, or one of the fourth polarized light and the first polarized light and the second polarized light having the same polarization state as the fourth polarized light may be selectively inputted to the coupler unit.
It can be seen that the incident unpolarized light is split into two polarized light beams of orthogonal polarization states before the measurement light and the reference light enter the coupler unit, and the measurement light and the reference light of identical polarization states are input to the coupler unit. Therefore, the polarization of the system can be improved, and the influence of noise is reduced, so that the anti-interference capability of the chip is improved.
As shown in fig. 4, in some embodiments, the optical waveguide 460 is also used to connect the polarizing beam splitter unit 450 to the measurement light receiving unit 410 and the coupler unit 420. In the case where the integrated chip 400 includes the reference light receiving unit 440, the optical waveguide 460 may also be used to connect the reference light receiving unit 440 to the polarization beam splitter unit 450.
In some embodiments, the measurement light receiving unit, the coupler unit, the balanced photodetector unit, and the optical waveguide may be formed on a silicon-on-insulator (SOI) substrate and formed by a silicon-based process. In the case where the integrated chip includes the reference light receiving unit and the polarizing beam splitter unit, the reference light receiving unit, the polarizing beam splitter unit, the measuring light receiving unit, the coupler unit, the balance photodetector unit, and the optical waveguide may be formed on the SOI substrate, and these components may be formed by a silicon-based process.
By forming the above components of the integrated chip by a silicon-based process, the various units can be connected by silicon optical waveguides to achieve transmission of optical signals by all-silicon optical units. Since the all-silicon optical device can be formed using a semiconductor process, the manufacturing process of the integrated chip can be simplified as a whole.
In some embodiments, the reference light and the measurement light may be from a frequency modulated continuous wave laser light source. For example, the laser light source may emit light in the form of a frequency modulated continuous wave. After being split, a part of the light emitted by the laser light source is used as reference light, and the other part is used as measuring light. After the measuring light is reflected by the target, the measuring light is received by the measuring light receiving unit, and is subjected to the next process.
In some embodiments, the frequency modulated continuous wave laser light source may be integrated on the integrated chip described above. The frequency modulated continuous wave laser light source may be integrated with other units on the same chip, depending on the particular application and/or requirements. This contributes to a more compact target detection system. For example, the laser light source can be integrated on an integrated chip as shown in fig. 1, so that the light path design is further simplified, and the integration level is improved.
In some embodiments, the information of the object to be measured may comprise, for example, at least one of a position of the object and a speed of the object. According to specific application and/or requirements, not only the position of the target but also the speed of the target can be obtained, so that the comprehensive measurement of the target information is realized.
According to another aspect of the present disclosure, there is also provided an electronic device, which may include the aforementioned integrated chip. For example, the aforementioned integrated chip may be integrated on an electronic device as a functional unit. The electronic device may be a lidar, for example.
While the disclosure has been illustrated and described in detail in the drawings and foregoing description, such illustration and description are to be considered illustrative and schematic and not restrictive; the present disclosure is not limited to the disclosed embodiments. Variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed subject matter, from a study of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps than those listed and the indefinite article "a" or "an" does not exclude a plurality, and the term "plurality" means two or more. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
Aspect 1. An integrated chip for target detection, comprising:
a measuring light receiving unit for coupling measuring light reflected from the target into the integrated chip, and including a microlens and a nanoantenna;
a coupler unit for mixing the reference light and the measurement light and outputting a first coupled light signal and a second coupled light signal;
a balanced photodetector unit for photoelectrically converting the first and second coupled optical signals to output an electrical signal for determining information of the target; and
An optical waveguide for connecting the measuring light receiving unit to the coupler unit and connecting the coupler unit to the balanced photodetector unit.
Aspect 2. The integrated chip according to aspect 1, wherein,
The micro lens is positioned above the nano antenna, and
The measuring light enters the nano antenna after passing through the micro lens, and enters the optical waveguide through the nano antenna.
Aspect 3. The integrated chip according to aspect 2, wherein,
The micro lens is of a hemispherical structure formed by SiO 2, polyimide or benzocyclobutene.
Aspect 4. The integrated chip according to aspect 3, wherein,
The micro-lenses are formed by adopting a photoresist hot melting process.
Aspect 5. The integrated chip of aspect 1, wherein the nano-antenna is formed of Si, and
The nano antenna comprises an antenna waveguide and an antenna grating, wherein the antenna waveguide and the antenna grating are integrally formed, the antenna grating is distributed along the extending direction of the antenna waveguide, the antenna grating comprises at least two curve parts, the at least two curve parts are bent towards one side of the antenna waveguide, and the tangential direction at the midpoint of each curve part of the at least two curve parts is perpendicular to the extending direction of the antenna waveguide.
Aspect 6. The integrated chip of aspect 1, wherein,
The coupler unit includes a 2×2 coupler for mixing the reference light and the measurement light such that the output first and second coupled optical signals have equal amplitudes and a predetermined phase shift between the first and second coupled optical signals.
Aspect 7. The integrated chip of aspect 1, wherein,
The balanced photodetector unit comprises a first photodetector and a second photodetector which are consistent in parameters, a plurality of external electrodes electrically connected to the first photodetector and the second photodetector, and
Wherein the first and second photodetectors are formed based on the same process and are disposed spatially adjacent.
Aspect 8. The integrated chip of aspect 1, further comprising: a polarizing beam splitter unit including a first polarizing beam splitter and a second polarizing beam splitter,
Wherein the first polarization beam splitter is used for dividing the measuring light into first polarized light and second polarized light with orthogonal polarization states and inputting one of the first polarized light and the second polarized light into the coupler unit,
Wherein the second polarization beam splitter is configured to split the reference light into third polarized light and fourth polarized light having orthogonal polarization states, and input one of the third polarized light and the fourth polarized light to the coupler unit, and
Wherein the polarization state of the one of the first polarized light and the second polarized light is the same as the polarization state of the one of the third polarized light and the fourth polarized light.
Aspect 9. The integrated chip of aspect 8, wherein,
The optical waveguide is also used to connect the polarizing beam splitter unit to the measurement light receiving unit and the coupler unit.
Aspect 10. The integrated chip of aspect 1, further comprising:
and the reference light receiving unit is used for coupling the reference light into the integrated chip.
Aspect 11. The integrated chip of aspect 10, wherein the reference light receiving unit includes a grating coupler.
Aspect 12. The integrated chip of aspect 1, wherein the reference light and the measurement light are from a frequency modulated continuous wave laser light source.
Aspect 13 the integrated chip of aspect 12, wherein the frequency modulated continuous wave laser light source is integrated on the integrated chip.
Aspect 14 the integrated chip of any one of aspects 1-13, wherein the measurement light receiving unit, the coupler unit, the balanced photodetector unit, and the optical waveguide are formed on a silicon-on-insulator SOI substrate and formed by a silicon-based process.
Aspect 15 the integrated chip of any one of aspects 1-13, wherein the information of the target includes at least one of a position of the target and a velocity of the target.
Aspect 16 an electronic device comprising an integrated chip according to any one of aspects 1 to 15.
Aspect 17. The electronic device of aspect 16, wherein the electronic device is a lidar.
Claims (16)
1. An integrated chip for target detection, comprising:
a measuring light receiving unit for coupling measuring light reflected from the target into the integrated chip, and including a microlens and a nanoantenna;
A polarizing beam splitter unit including a first polarizing beam splitter and a second polarizing beam splitter, wherein the first polarizing beam splitter is configured to split the measurement light into first polarized light and second polarized light having orthogonal polarization states, and input one of the first polarized light and the second polarized light to a coupler unit, wherein the second polarizing beam splitter is configured to split the reference light into third polarized light and fourth polarized light having orthogonal polarization states, and input one of the third polarized light and the fourth polarized light to the coupler unit, and wherein the polarization state of the one of the first polarized light and the second polarized light is the same as the polarization state of the one of the third polarized light and the fourth polarized light;
a coupler unit for mixing the reference light and the measurement light and outputting a first coupled light signal and a second coupled light signal;
a balanced photodetector unit for photoelectrically converting the first and second coupled optical signals to output an electrical signal for determining information of the target; and
An optical waveguide for connecting the measuring light receiving unit to the coupler unit and connecting the coupler unit to the balanced photodetector unit.
2. The integrated chip of claim 1, wherein,
The micro lens is positioned above the nano antenna, and
The measuring light enters the nano antenna after passing through the micro lens, and enters the optical waveguide through the nano antenna.
3. The integrated chip of claim 2, wherein,
The micro lens is of a hemispherical structure formed by SiO 2, polyimide or benzocyclobutene.
4. The integrated chip of claim 3, wherein,
The micro-lenses are formed by adopting a photoresist hot melting process.
5. The integrated chip of claim 1, wherein the nano-antenna is formed of Si, and
The nano antenna comprises an antenna waveguide and an antenna grating, wherein the antenna waveguide and the antenna grating are integrally formed, the antenna grating is distributed along the extending direction of the antenna waveguide, the antenna grating comprises at least two curve parts, the at least two curve parts are bent towards one side of the antenna waveguide, and the tangential direction at the midpoint of each curve part of the at least two curve parts is perpendicular to the extending direction of the antenna waveguide.
6. The integrated chip of claim 1, wherein,
The coupler unit includes a2×2 coupler for mixing the reference light and the measurement light such that the output first and second coupled optical signals have equal amplitudes and a predetermined phase shift between the first and second coupled optical signals.
7. The integrated chip of claim 1, wherein,
The balanced photodetector unit comprises a first photodetector and a second photodetector which are consistent in parameters, a plurality of external electrodes electrically connected to the first photodetector and the second photodetector, and
Wherein the first and second photodetectors are formed based on the same process and are disposed spatially adjacent.
8. The integrated chip of claim 1, wherein,
The optical waveguide is also used to connect the polarizing beam splitter unit to the measurement light receiving unit and the coupler unit.
9. The integrated chip of claim 1, further comprising:
and the reference light receiving unit is used for coupling the reference light into the integrated chip.
10. The integrated chip of claim 9, wherein the reference light receiving unit comprises a grating coupler.
11. The integrated chip of claim 1, wherein the reference light and the measurement light are from a frequency modulated continuous wave laser light source.
12. The integrated chip of claim 11, wherein the frequency modulated continuous wave laser light source is integrated on the integrated chip.
13. The integrated chip of any of claims 1-12, wherein the measurement light receiving unit, the coupler unit, the balanced photodetector unit, and the optical waveguide are formed on a silicon-on-insulator SOI substrate and are formed by a silicon-based process.
14. The integrated chip of any of claims 1-12, wherein the information of the target includes at least one of a location of the target and a velocity of the target.
15. An electronic device comprising an integrated chip as claimed in any one of claims 1 to 14.
16. The electronic device of claim 15, wherein the electronic device is a lidar.
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| CN112987018B (en) * | 2021-02-08 | 2023-06-13 | 中国科学院光电技术研究所 | Laser imaging optical system for realizing large staring visual field detection by utilizing planar micro-nano structure lens |
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