CN1120579C - Signal receiving device - Google Patents
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- CN1120579C CN1120579C CN 99126245 CN99126245A CN1120579C CN 1120579 C CN1120579 C CN 1120579C CN 99126245 CN99126245 CN 99126245 CN 99126245 A CN99126245 A CN 99126245A CN 1120579 C CN1120579 C CN 1120579C
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Abstract
The solving means of this invention is described in the following. At the antenna portion 11, ribbon-shaped or wire-shaped magnetic impedance effect device 1b is used to examine the variation of magnetic field composition for the received electric wave signal. The length of magnetic impedance effect device 1b is 0.1 mm to 10 mm, such that the size of antenna portion 11 can be apparently minimized.
Description
Technical field
The present invention relates to a kind of signal receiving device with antenna, resonant tank, detector circuit, be particularly related to a kind ofly by using the mode of magneto-resistance effect element at described antenna place, and make antenna miniaturization and then make the signal receiving device of whole signal receiving device miniaturization.
Background technology
The block diagram that Fig. 7 uses for the existing signal receiving device of expression.
Signal receiving device as shown in Figure 7 is converted to electric signal by antenna 1 with electric wave signal.For with its occasion of using with signal receiving device as medium wave, antenna 1 by such as ferrite etc., have that the coil that twines on the magnetic core body of high permeability etc. constitutes.By the antenna that constitutes by the coil that is wrapped on the ferrite core body, just can detect the magnetic field composition in the electric wave signal.
Described winding around is made of first siding ring 1a and second siding ring 1b, and forms induction bonded between two coils.Described first siding ring 1a and tuningly be connected in parallel with variable capacitor 2a is to constitute resonant tank 2.Can use 2 pairs of received signals of this resonant tank to implement frequency selects.The received signal of implementing after frequency is selected is exported by second siding ring 1b place, and is implemented to amplify by high frequency amplifying return circuit 3.Be by carrier wave and be in the mixed signal that the signal that can listen to frequency band constitutes that by the signal of high frequency amplifying return circuit output the detector circuit 4 that is arranged on the rear side place is removed carrier wave from this mixed signal, to implement detection to being in the signal that can listen to frequency band.Subsequently as required, can also utilize after 5 pairs of detections of low frequency amplifying return circuit, be in the signal that can listen to frequency band and implement to amplify, and then by loud speaker 6 corresponding sound of output or music.
Yet existing use has the shortcoming that is difficult to miniaturization at winding around antenna 1 place, that have the ferrite core body.In general, be core body if adopt magnetic core with high permeability, then, in magnetic core, can form counter magnetic field when when the length direction of magnetic core is implemented excitation, if so magnetic core less than 10 millimeters, will make its magnetic field detection susceptibility rapid deterioration.Therefore, the length of existing ferrite core body antenna is usually about more than 50 millimeters.And Ferrite Material is the fragility material, so also have difficulty at aspects such as making installation.
Can easily realize miniaturization by integrated circuit by the loop that detector circuit 4, amplifying return circuit 3,5 etc. constitutes.Yet owing to foregoing reason, antenna 1 need have more than certain length, and institute is so that whole device is difficult to miniaturization.
The present invention is exactly the invention that addresses the above problem usefulness, and purpose of the present invention a kind ofly can make whole equipment miniaturization, integrated signal receiving device by the mode that makes antenna miniaturization with regard to providing.
Summary of the invention
A kind of signal receiving device provided by the present invention can be a kind of signal receiving device with antenna, resonant tank, detector circuit, described antenna has magneto-resistance effect element, apply the driving loop that the AC driving signal is used to described magneto-resistance effect element, to implementing the commutating circuit that rectification is used, and from described mixed signal, separate and obtain the frequency discrimination device that received electric wave signal is used by received electric wave signal with by the mixed signal that the AC driving signal of described driving loop output constitutes.
Magneto resistance effect is a kind of effect as described below.When being applied with the alternating current that is positioned at megahertz band territory on the magnetic that is being such as shapes such as wire or band shapes, at place, the both ends of magnetic will owing to material intrinsic impedance produced output voltage.If in this state, length direction along magnetic applies the external magnetic field, even this external magnetic field only is number Gausses' Weak magentic-field, the amplitude of magnetic output voltage also can be owing to its impedance variation, and in the scope of dozens of percentage point with respect to the Strength Changes of external magnetic field.
Element with this magneto resistance effect is to implement excitation in the outside perimembranous direction along element, therefore can not produce counter magnetic field, when magnetization vector along the length direction of element, be that the direction of flowing through of alternating current produces when minor rotation is arranged, permeability is produced sharply change.Therefore, its counter magnetic field along its length is very little, even leement duration only is 1 millimeter, also can not worsen basically the susceptibility of magnetic field detection.
And, if be formed with the electrode of the usefulness that is connected with described driving loop at place, the both ends of described magneto-resistance effect element, and AC driving signal flow direction is a hard axis, then can go up in the direction and further improve its permeability, thereby further raising is with respect to the detection sensitivity of the external magnetic field that is applied.
And, if also be applied with bias magnetic field, can also change corresponding to the magnetic composition of broadcasting electric wave along described AC driving signal flow direction at described magneto-resistance effect element place, the variation of the output voltage that is positioned at place, magneto-resistance effect element both ends is further increased.
And described magneto-resistance effect element can form belt like shape, also can form the wire shape.
And the frequency of described AC driving signal cans be compared to the carrier frequency height of received electric wave signal most.
If the frequency of AC driving signal is not the high frequency frequency, described magneto-resistance effect element will be difficult to show the magneto resistance effect characteristic.The frequency of described AC driving signal is minimum also will to be hundreds of KHz, if the carrier frequency of the frequency of AC driving signal and received electric wave signal is close, will be difficult to remove this AC driving signal in follow-up phase from mixed signal.The frequency of broadcasting of medium wave is arranged in the above frequency band of 500 KHz, so if the frequency of AC driving signal is lower than this frequency band, difference on the frequency between AC driving signal and the received electric wave signal also has only hundreds of KHz at most, thereby is difficult to remove the AC driving signal by high pass filter.On the other hand, if make the frequency height of the received electric wave signal of the frequency ratio of AC driving signal, then can improve the tolerance limit of removing the low pass filter that the AC driving signal uses.From practical angle, the frequency of AC driving signal is preferably tens of times of received electric wave signal frequency.
Can be used for making the magnetic of magneto-resistance effect element constructed according to the invention, for having the ferromagnetism body of soft magnetism characteristic.And in the high-frequency region of tens of megahertzes～hundreds of megahertzes, its magnetic permeability mu must be quite high.Because the magnetic permeability mu in high-frequency range is quite high, so the electricalresistivity is inevitable also quite big.And, for the stress that makes the external world's generation that is added on the magneto-resistance effect element is unlikely to make the magnetism characteristic degradation, preferably make magnetostriction constant lambda smaller.If can make for instance, this magnetic material can for:
1. by a structural group accepted way of doing sth (Fe
1-aCo
a)
100-x-y(Si
1-bB
b)
xM
yThe material that the amorphous build non-retentive alloy of expression constitutes, wherein element M is one or both the element that includes among Cr, the Ru, and a, b that expression structure ratio of components is used are respectively 0.05≤a≤0.1,0.2≤b≤0.8, x, y % by weight are respectively 10≤x≤35,0≤y≤7.
As previously mentioned, if parameter a not within the scope of 0.05≤a≤0.1, then magnetostriction is bigger, and makes material property bad.If parameter b then is difficult to realize noncrystallineization, and makes material property bad not within the scope of 0.2≤b≤0.8.If parameter x then is difficult to realize noncrystallineization, and makes material property bad not within the scope of 10≤x≤35.If parameter x＞35 also will make the magnetism characteristic degradation, also can make material property bad.
2. by structural group accepted way of doing sth Co
lTa
mHf
nExpression, be configured to the material that the amorphous build non-retentive alloy of main body constitutes with amorphous, wherein l, m, n by weight % be respectively 70≤l≤90,5≤m≤21,6.6≤n≤15,1≤m/n≤2.5.
Described Co
lTa
mHf
nThe saturation magnetic induction degree Bs of class non-retentive alloy is relevant with the amount of Elements C o, in order to obtain will to make 70≤l than higher saturation magnetic induction degree Bs.Yet when parameter l 〉=90, the electricalresistivity will diminish, thereby make material property bad.
Element T a and element Hf obtain the element that the soft magnetism characteristic is used, and by making the mode of 5≤m≤21,6.6≤n≤15, can obtain the soft magnetic material that saturation magnetic induction degree Bs is bigger and the electricalresistivity is also bigger.Element Hf is created in the element that the negative magnetostriction constant λ in the Co-Ta class material uses for eliminating.The ratio of the amount of magnetostriction constant lambda and element T a and the amount of element Hf is relevant, when it is positioned within the scope of 1≤m/n≤2.5, can cut down magnetostriction constant lambda well.
3. by structural group accepted way of doing sth Fe
hM
iO
jExpression, be configured to the material that the crystallite build non-retentive alloy of main body constitutes with amorphous, wherein element M is for by one or more the element of selecting in Ti, Zr, Hf, V, Nb, Ta, W and the rare earth element, h, i, j % by weight are respectively 45≤h≤70,5≤i≤30,10≤j≤40, and h+i+j=100.
Element of Fe is for obtaining the element that bigger saturation magnetic induction degree Bs uses, and element M is to form oxide to increase the employed element of electricalresistivity in amorphous is constructed mutually.
In the time of within parameter h, i, j are positioned at above-mentioned scope, can obtain saturation magnetic induction degree Bs, electricalresistivity and all bigger non-retentive alloy of magnetic permeability mu, in the time of outside parameter h, i, j are positioned at above-mentioned scope, the soft magnetism characteristic will worsen.
And in the said structure composition formula, if element M for by one or more the element of selecting in the rare earth element, then parameter h, j by weight % be preferably 50≤h≤70,10≤j≤30.
4. be by a structural group accepted way of doing sth (Co
1-cT
c)
xM
yX
zO
wThe material that the crystallite build non-retentive alloy of expression constitutes, wherein element T is for including Fe, the element of one or both among the Ni, element M is by Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, Si, P, C, W, B, Al, Ga, the element of one or more that select in Ge and the rare earth element, element X is by Au, Ag, Cu, Ru, Rh, Os, Ir, Pt, the element of one or more that select among the Pd, the c that an expression structural group accepted way of doing sth is used is 0≤c≤0.7, parameter x, y, z, w is respectively 3≤y≤30 by atom %, 0≤z≤20,7≤w≤40,20≤y+z+w≤60, all the other are x.
If non-retentive alloy for the non-crystalline material of the oxide that includes many element M mutually in, sneak into mutually, and then be best when making micro-crystallization include the oxide of element M in mutually based on the micro-crystallization of Elements C o and element T.
5. be by structural group accepted way of doing sth Co
aZr
bNb
cExpression, be configured to the material that the amorphous build non-retentive alloy of main body constitutes with amorphous, wherein parameter a, b, c by weight % be respectively 78≤a≤91,0.5≤b/c≤0.8.
Saturation magnetic induction degree Bs is relevant with the concentration of Elements C o, in order to make saturation magnetic induction degree Bs bigger, just must make 78≤a≤91.If parameter a＞91, then corrosion resistance descends and is difficult to form the amorphous structure, and the beginning crystallization, thereby make material property bad.When parameter a＜78, Elements C o reducing to each other in abutting connection with ratio, because magnetic knot closes and is blocked, thus be difficult to show the soft magnetism characteristic, and make material property bad.And magnetic permeability mu also the concentration with Elements C o is relevant, it is the higher value of ratio in 78≤a≤91 scopes.
6. be by structural group accepted way of doing sth T
100-d-e-f-gX
dM
eZ
fQ
gExpression, with bcc-Fe, bcc-FeCo, one or more crystalline particles among the bcc-Co are the material that the crystallite build non-retentive alloy of main body constitutes, wherein element T is for including Fe, the element of one or both among the Co, element X is for including Si, the element of one or both among the Al, element M is by Ti, Zr, Hf, V, Nb, Ta, Mo, the element of one or more that select among the W, element Z is by C, the element of one or more that select among the N, element Q is by Cr, Re, Ru, Rh, Ni, Pd, Pt, the element of one or more that select among the Au, parameter d, e, f, g % by weight is respectively 0≤d≤25,1≤e≤10,0.5≤f≤15,0≤g≤10.
If each parameter d, e, f, g are positioned within the above-mentioned scope, just can obtain the non-retentive alloy that magnetic permeability mu is bigger, coercive force Hc is smaller and magnetostriction constant lambda is also smaller.
7. be by structural group accepted way of doing sth T
100-p-q-e-f-gSi
pAl
qM
eZ
fQ
gExpression, with bcc-Fe, bcc-FeCo, one or more crystalline particles among the bcc-Co are the material that the crystallite build non-retentive alloy of main body constitutes, wherein element T is for including Fe, the element of one or both among the Co, element M is by Ti, Zr, Hf, V, Nb, Ta, Mo, the element of one or more that select among the W, element Z is by C, the element of one or more that select among the N, element Q is by Cr, Re, Ru, Rh, Ni, Pd, Pt, the element of one or more that select among the Au, parameter p, q, e, f, g % by weight is respectively 8≤p≤15,0≤q≤10,1≤e≤10,0.5≤f≤15,0≤g≤10.
If each parameter p, q, e, f, g are positioned at above-mentioned scope, just can obtain the non-retentive alloy that magnetic permeability mu is bigger, coercive force Hc is smaller and magnetostriction constant lambda is also smaller.
Below the magneto resistance effect that is applied in the embodiment of the invention is described.
When to forming soft magnetic material such as shapes such as wire or band shapes when applying small high-frequency current, can be at the place, both ends of soft magnetic material owing to impedance produces output voltage.What magneto resistance effect referred to is exactly under the condition that is applied with small high-frequency current on the soft magnetic material, if be applied with the external magnetic field, then the impedance of soft magnetic material will change sensitively thereupon, and then the effect that the output voltage that is positioned at soft magnetic material both ends places is changed.
As everyone knows, being applied in the impedance variation of the soft magnetic material of external magnetic field, is a kind of when having alternating current to flow through this magnetic material, and alternating current fails to be convened for lack of a quorum and is " skin effect " of close its Surface runoff, thus the externally effect in the magnetic field variation of generation down.
If be exactly specifically, magneto resistance effect is a kind of like this effect, promptly in closed-loop path as shown in Figure 6, to being such as film like, wire or banded magnetic Mi are applied with and are provided by power supply Eac, be positioned under the state of alternating current Iac of megahertz frequency band, if the length direction along magnetic Mi applies external magnetic field Hex, then at place, the both ends of magnetic Mi will owing to material intrinsic impedance produced output voltage Emi, and the amplitude of this output voltage Emi will change in the scope of dozens of percentage point with respect to the intensity of external magnetic field Hex, promptly produce the phenomenon that impedance variation is arranged.
Element with this magneto resistance effect is to implement excitation in the outside perimembranous direction along element, therefore will can not produce counter magnetic field, magnetization vector along the length direction of element, be that the Iac of the alternating current direction of flowing through produces when minor rotation is arranged, permeability is produced sharply to be changed, so its counter magnetic field along its length is very little, even leement duration only is 1 millimeter, can not worsen basically the susceptibility of magnetic field detection yet.
And this magneto-resistance effect element has can make its resolution ratio up to 10
-5The characteristic of the Weak magentic-field transducer about Oe, have in order to implement the excitation more than the number megahertz, the high frequency excitation of hundreds of megahertzes is freely used as the Modulation and Amplitude Modulation carrier wave, when using, can easily blocking frequency be arranged on the characteristic more than 10 megahertzes, and have to make and consume the characteristic of electric power less than 10 milliwatts as magnetic field sensor.
Soft magnetic material with this magneto resistance effect characteristic can adopt Fe-Co-Si-B class material, such as such as (Fe
6Co
94)
72.5Si
12.5B
15Amorphous build wire (people such as Maoli Jianianxiong, " magnetic resistance (Ml) element ", magnetic research association of electric association data, Vol.1, MAG-94, No.75-84, p27-36, distribution in 1994 years) material etc.
The magneto resistance effect characteristic of this Fe-Co-Si-B class material as shown in Figure 4, promptly with respect to the positive and negative external magnetic field Hex (Oe) that is applied, output voltage Emi (millivolt), the position that is substantially with outside magnetic field H ex=0 (Oe) is the symmetrical shape in center.To the mensuration of as shown in Figure 4 magneto resistance effect characteristic, be the magneto-resistance effect element that is wire to be applied the AC driving signal that frequency is 3 megahertzes, and implement under the condition that external magnetic field strength is changed in the scope of-5 (Oe)～5 (Oe).
Existing magneto-resistance effect element can use such as detect aspect sensor that earth magnetism uses, as in the rotary encoder that detects the rotation angle sensor of using such as the spindle drive motor of drive units such as hard disk and floppy disk etc.
Magneto-resistance effect element constructed according to the invention can also use in the antenna of signal receiving device.
Description of drawings
Below with reference to description of drawings most preferred embodiment of the present invention.
Fig. 1 is a schematic block diagram that embodiment uses of expression signal receiving device of the present invention.
Fig. 2 is the loop diagram that example use of expression as the driving loop among the present invention.
The curve chart that Fig. 3 changes with received electric wave signal for the output voltage of representing the magneto-resistance effect element in the signal receiving device as shown in Figure 1.
The curve chart that Fig. 4 uses for the magneto resistance effect characteristic of expression Fe-Co-Si-B class magneto-resistance effect element.
Fig. 5 applies the figure that schematically illustrates of a kind of method that bias magnetic field uses to magneto-resistance effect element for expression.
Fig. 6 applies the AC driving signal and applies the figure that schematically illustrates of a kind of method of using the external magnetic field to magneto-resistance effect element for expression.
The block diagram that Fig. 7 uses for the existing signal receiving device of expression.
Embodiment
Antenna 11 has catches the magneto-resistance effect element 11b that electric wave signal is used, apply the driving loop 11a that the AC driving signal is used to this magneto-resistance effect element 11b, the mixed signal that is mixed by AC driving signal and received electric wave signal is implemented the commutating circuit 11c that rectification is used, and remove the frequency discrimination device 11d that the AC driving signal is used.
The shape of magneto-resistance effect element 11b can be such as shapes such as wire, band shapes.The magneto-resistance effect element that is wire, belt like shape can be by such as singly rolling method manufacturings such as method, casting, fluid cooling method.But also can adopt by such as this magneto-resistance effect element 11b of the made method manufacturing, that be film like such as sputtering method, vapour deposition method.
At the electrode that the place, both ends is formed with and driving loop 11a is connected of magneto-resistance effect element 11b, and this magneto-resistance effect element 11b is at the shaft-type part spare that is difficult to along the formation of AC driving signal flow direction be magnetized.Therefore, will rise along the permeability of AC driving signal flow direction, and also will rise with respect to the detection sensitivity of received electric wave signal.
Be the method that is difficult to the shaft-type part spare that is magnetized at the flow direction of AC driving signal as magneto-resistance effect element 11b, it can be the method that is placed on magneto-resistance effect element 11b in the magnetic field and produces film by padding method etc., also can be under the state in no magnetic field (or little magnetic field) by singly rolling after methods such as method, casting, fluid cooling method, sputtering method or vapour deposition method implement to make, in hot environment, be placed in the magnetic field again and in magnetic field, implement the method etc. of annealing.
The length dimension of magneto-resistance effect element 11b can be 0.1～10 millimeter, and gauge can be 1～50 micron.Because the length of magneto-resistance effect element is different with gauge, the magneto resistance effect characteristic of this magneto-resistance effect element is also different, so susceptibility that can be required according to signal receiving device, and the purposes of signal receiving device select to use the suitably magneto-resistance effect element of size.
If for instance, the structure of magneto-resistance effect element 11b formation can be (Co
0.94Fe
0.06)
72.5Si
12.5B
15Except this structure constitutes, can also adopt such as Fe-Co-Si-B class soft magnetic material, and such as the Co-T-M-X-O class (wherein element T is for including Fe, the element of one or both among the Ni, element M is by Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, Si, P, C, W, B, Al, Ga, the element of one or more that select in Ge and the rare earth element, element X is by Au, Ag, Cu, Ru, Rh, Os, Ir, Pt, the element of one or more that select among the Pd), the Co-Ta-Hf class, (wherein element M is by Ti to the Fe-M-O class, Zr, Hf, V, Nb, Ta, the element of one or more that select in W and the rare earth element), the Co-Zr-Nb class, (wherein element T is for including Fe for the T-Si-Al-M-Z-Q class, the element of one or both among the Co, element M is by Ti, Zr, Hf, V, Nb, Ta, Mo, the element of one or more that select among the W, element Z is by C, the element of one or more that select among the N, element Q is by Cr, Re, Ru, Rh, Ni, Pd, Pt, the element of one or more that select among the Au) etc. soft magnetic material is made magneto-resistance effect element 11b.
Can be 10 milliamperes, 2 volts if for instance, drive electric current and the voltage that loop 11a is applied to the AC driving signal of magneto-resistance effect element 11b.And when driving loop 11a for the loop moved by the self-oscillation mode, magneto-resistance effect element 11b can also with drive loop 11a and form as one, the unsettled phenomenon of susceptibility that therefore can also prevent because loop drift impedance etc. produces takes place.
An example in the driving loop of moving by the self-oscillation mode is stable electric capacity feedback type oscillation circuit as shown in Figure 2.
The AM signal is play according to sound and music etc., is in the signal that can listen to frequency band, implements to implement to send after the Modulation and Amplitude Modulation such as the transmission carrier wave in 500 KHz～2000 KHz equifrequent band territories to being positioned at.Signal receiving device of the present invention can detect the variation of the magnetic composition in the received electric wave signal, and is converted into electric signal.
The AC driving signal that is provided by driving loop 11a is applied to such as on the magneto-resistance effect element 11b that is shapes such as wire or band shape, thereby locates owing to impedance produces output voltage at the both ends of magneto-resistance effect element 11b.10 times that can be the AM signal(-) carrier frequency with the frequency setting of AC driving signal to more than 20 times.In the present embodiment, it is 20 megahertzes.When the electric wave signal arriving signal receiving system of AM signal, be positioned at the amplitude of place, the two ends output voltage on the magneto-resistance effect element 11b, will change corresponding to the amplitude variations of magnetic composition in the electric wave signal.
Fig. 3 shows and is positioned at the output voltage that magneto-resistance effect element 11b goes up the place, two ends, the curve shape that changes with the variation of received electric wave signal.AM signal carrier 32 is implemented Modulation and Amplitude Modulation by being in the signal 31 that can listen to frequency band.Owing to the amplitude that is positioned at the output voltage of locating at the last two ends of magneto-resistance effect element 11b will change along with the amplitude variations of carrier wave 32, so the signal by the output of place, magneto-resistance effect element 11b two ends is the mixed signal that is made of electric wave signal received, that have carrier wave 32 and AC driving signal 33.
Fig. 4 shows the magneto resistance effect characteristic of Fe-Co-Si-B class material, and as shown in Figure 4, with respect to the positive and negative external magnetic field that is applied, it is the symmetrical shape in center that its output voltage is with outside magnetic field H ex=0 substantially.Therefore, no matter carrier wave 32 still is negative for just, the amplitude of output voltage equates.Carrier wave 32 need carry out rectification in the rectification stage, when rectification, can remove and be negative part in the carrier wave 32, and only to being positive part enforcement conversion, but this magneto-resistance effect element 11b implements conversion under the state of the positive and negative enforcement of carrier wave 32 not being distinguished, thereby can correctly implement demodulation to being in the signal that can listen to frequency band.
And, when adopting Fe-Co-Si-B class material magneto-resistance effect element 11b, if be applied with the bias magnetic field of 0.5～1 (Oe), then magneto resistance effect indicatrix as shown in Figure 4 will be along horizontal direction (axial direction in magnetic field) drift, and near the output voltage of magnetic field 0 (Oe) time is changed to maximum.Adopt this mode that applies bias voltage, can make to be positioned at the output voltage that magneto-resistance effect element 11b goes up the place, both ends, more responsive with respect to the variation of broadcasting the magnetic composition in the electric wave.
If for instance, the method that applies bias magnetic field to the magneto-resistance effect element place can be as shown in Figure 5, promptly twining the coil C with suitable number of turns around the magneto-resistance effect element 11b, and by making the flow through mode of this coil C of direct current produce bias magnetic field.
Mixed signal by place, the last both ends of magneto-resistance effect element 11b electric wave signal with carrier wave 32 output, received and AC driving signal 33 constitute is input to commutating circuit 11c.In the present embodiment, be to utilize the bridge type return that constitutes by diode 11e, 11e, 11e, 11e as commutating circuit, so can be transformed to positive part for negative part in the mixed signal.Commutating circuit 11c is not limited in the bridge type return of this employing diode, can also adopt the various loops with rectified action as this loop.If for instance, also can only between magneto-resistance effect element 11b and frequency discrimination device 11d, connect a diode.
Mixed signal by received electric wave signal with carrier wave 32 and AC driving signal 33 produce inputs to frequency discrimination device 11d, to remove AC driving signal 33 after the enforcement rectification.
For the frequency of the received electric wave signal of the ratio of the frequency setting of AC driving signal when high, can adopt low pass filter to constitute frequency discrimination device 11d, and when low, can adopt high pass filter to constitute frequency discrimination device 11d for the frequency of the received electric wave signal of the ratio of the frequency setting of AC driving signal.
At this, the frequency height of the electric wave signal that the ratio that the frequency of AC driving signal is preferably set is received.
If the AC driving signal is not in high frequency band, then magneto-resistance effect element 11b will be difficult to show magneto resistance effect.The frequency of AC driving signal is minimum also will to be hundreds of KHz, if the carrier frequency of the frequency of AC driving signal and received electric wave signal is close, will be difficult to from the mixed signal of received electric wave signal and the generation of AC driving signal, remove the AC driving signal by frequency discrimination device 11d.
The frequency of broadcasting of medium wave is arranged in the above frequency band of 500 KHz, when the frequency of AC driving signal is lower than this frequency band, difference on the frequency between AC driving signal and the received electric wave signal also has only hundreds of KHz at most, thereby is difficult to remove the AC driving signal by high pass filter.On the other hand, if make the frequency height of the received electric wave signal of the frequency ratio of AC driving signal, then can improve the tolerance limit of removing the low pass filter that the AC driving signal uses.From practical angle, the frequency of AC driving signal is preferably tens of times of received electric wave signal frequency.
In the present embodiment, frequency discrimination device 11d utilizes the low pass filter that is made of capacitor 11f and resistor 11g to constitute.Capacitor 11h is used for removing the direct current composition of sneaking into to the mixed signal that is produced by received electric wave signal and AC driving signal.
The frequency discrimination device is not limited in and adopts as employed loop in the present embodiment, also can adopt other the various loops that can remove the AC driving signal.If for instance, can also not adopt high pass filter and low pass filter, but select only to make received electric wave signal carrier wave can by and band that the AC driving signal cannot pass through block filter frequently.And, also can not adopt the filter that constitutes by capacitor and resistor, and biasing assembly only is set.Iff biasing assembly is set, also can removes the AC driving signal and can improve susceptibility.
After in the mixed signal that constitutes by received electric wave signal and AC driving signal 33, removing AC driving signal 33, implement to amplify by 12 pairs of electric wave signals that obtained of high frequency amplifying return circuit with carrier wave 32.
Yet antenna 11 does not have the function of received electric wave signal carrier frequency being implemented selection.In other words be exactly that the input signal of high frequency amplifying return circuit 12 and output signal are the mixture of the electric wave signal that includes received whole frequencies.Be arranged on the resonant tank 13 of position thereafter can output signal by high frequency amplifying return circuit 12 in, select the signal of required frequency, detector circuit 14 can obtain the source in the signal that can listen to frequency band by being in the mixed signal that the signal that can listen to frequency band and carrier wave constitute.
Resonant tank 13 and detector circuit 14 can adopt that employed loop constitutes in the signal receiver that conventional AM signal broadcasts.In other words be exactly, can use the resonance circuit that constitutes by coil and capacitor and band pass filter etc. to implement modulation, and can remove carrier wave and obtain and be in the signal that to listen to frequency band with low pass filter etc.
Can also utilize as required 15 pairs of low frequency amplifying return circuits accessed, be in the signal that can listen to frequency band and implement to amplify, and then by loud speaker 16 output sounds and music.
In the signal receiving device of the present invention that is as above described in detail, be to use magneto-resistance effect element replace existing, be wrapped in the coil on the ferrite core body and constitute antenna, so can make its miniaturization significantly.
And by the following aspect of magneto-resistance effect element, promptly the flow direction of AC driving signal is a hard axis, and applies bias magnetic field at the flow direction of AC driving signal, and the signal that can improve signal receiving device receives susceptibility.
Claims (12)
1. signal receiving device with antenna, resonant tank, detector circuit, it is characterized in that described antenna has magneto-resistance effect element, apply the driving loop that the AC driving signal is used to described magneto-resistance effect element, to implementing the commutating circuit that rectification is used, and obtain out the frequency discrimination device that received electric wave signal is used by separating in the described mixed signal by received electric wave signal with by the mixed signal that the AC driving signal of described driving loop output constitutes.
2. signal receiving device as claimed in claim 1 it is characterized in that being formed with at the place, two ends of described magneto-resistance effect element the electrode of usefulness of being connected with described driving loop, and the flow direction of AC driving signal is a hard axis.
3. a signal receiving device as claimed in claim 1 or 2 is characterized in that also being applied with bias magnetic field along described AC driving signal flow direction at described magneto-resistance effect element place.
4. a signal receiving device as claimed in claim 1 or 2 is characterized in that described magneto-resistance effect element forms wire or band shape.
5. signal receiving device as claimed in claim 1 or 2 is characterized in that the carrier frequency height of the electric wave signal that the frequency ratio of described AC driving signal is received.
6. a signal receiving device as claimed in claim 1 or 2 is characterized in that described magneto-resistance effect element is by a structural group accepted way of doing sth (Fe
1-aCo
a)
100-x-y(Si
1-bB
b)
xM
yThe amorphous build non-retentive alloy of expression constitutes, and wherein M is one or both the element that includes in chromium, the ruthenium, and a, b that expression structure ratio of components is used are respectively 0.05≤a≤0.1,0.2≤b≤0.8, and x, y % by weight are respectively 10≤x≤35,0≤y≤7.
7. a signal receiving device as claimed in claim 1 or 2 is characterized in that described magneto-resistance effect element is by structural group accepted way of doing sth Co
lTa
mHf
nAmorphous build non-retentive alloy expression, that be configured to main body with amorphous constitutes, wherein l, m, n by weight % be respectively 70≤l≤90,5≤m≤21,6.6≤n≤15,1≤m/n≤2.5.
8. a signal receiving device as claimed in claim 1 or 2 is characterized in that described magneto-resistance effect element is by structural group accepted way of doing sth Fe
hM
iO
jCrystallite build non-retentive alloy expression, that be configured to main body with amorphous constitutes, wherein M is for by one or more the element of selecting in titanium, zirconium, hafnium, vanadium, niobium, tantalum, tungsten and the rare earth element, h, i, j % by weight are respectively 45≤h≤70,5≤i≤30,10≤j≤40, and h+i+j=100.
9. a signal receiving device as claimed in claim 1 or 2 is characterized in that described magneto-resistance effect element is by a structural group accepted way of doing sth (Co
1-cT
c)
xM
yX
zO
wThe crystallite build non-retentive alloy of expression constitutes, wherein element T is for including iron, the element of one or both in the nickel, element M is by titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, silicon, phosphorus, carbon, tungsten, boron, aluminium, gallium, the element of one or more that select in germanium and the rare earth element, the element X gold of serving as reasons, silver, copper, ruthenium, rhodium, osmium, iridium, platinum, the element of one or more that select in the palladium, the c that expression structure ratio of components is used is 0≤c≤0.7, parameter x, y, z, w is respectively 3≤y≤30 by atom %, 0≤z≤20,7≤w≤40,20≤y+z+w≤60, all the other are x.
10. a signal receiving device as claimed in claim 1 or 2 is characterized in that described magneto-resistance effect element is by structural group accepted way of doing sth Co
aZr
bNb
cAmorphous build non-retentive alloy expression, that be configured to main body with amorphous constitutes, wherein parameter a, b, c by weight % be respectively 78≤a≤91,0.5≤b/c≤0.8.
11. a signal receiving device as claimed in claim 1 or 2 is characterized in that described magneto-resistance effect element is by structural group accepted way of doing sth T
100-d-e-f-gX
dM
eZ
fQ
gExpression, with bcc-Fe, bcc-FeCo, one or more crystalline particles among the bcc-Co are that the crystallite build non-retentive alloy of main body constitutes, wherein element T is for including iron, the element of one or both in the cobalt, element X is for including silicon, the element of one or both in the aluminium, element M is by titanium, zirconium, hafnium, vanadium, niobium, tantalum, molybdenum, the element of one or more that select in the tungsten, element Z is by carbon, the element of one or more that select in the nitrogen, element Q is by chromium, rhenium, ruthenium, rhodium, nickel, palladium, platinum, the element of one or more that select in the gold, parameter d, e, f, g % by weight is respectively 0≤d≤25,1≤e≤10,0.5≤f≤15,0≤g≤10.
12. a signal receiving device as claimed in claim 1 or 2 is characterized in that described magneto-resistance effect element is by structural group accepted way of doing sth T
100-p-q-e-f-gSi
pAl
qM
eZ
fQ
gExpression, with bcc-Fe, bcc-FeCo, one or more crystalline particles among the bcc-Co are that the crystallite build non-retentive alloy of main body constitutes, wherein element T is for including iron, the element of one or both in the cobalt, element M is by titanium, zirconium, hafnium, vanadium, niobium, tantalum, molybdenum, the element of one or more that select in the tungsten, element Z is by carbon, the element of one or more that select in the nitrogen, element Q is by chromium, rhenium, ruthenium, rhodium, nickel, palladium, platinum, the element of one or more that select in the gold, parameter p, q, e, f, g % by weight is respectively 8≤p≤15,0≤q≤10,1≤e≤10,0.5≤f≤15,0≤g≤10.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP363011/1998 | 1998-12-21 | ||
| JP36301198A JP3745910B2 (en) | 1998-12-21 | 1998-12-21 | Receiver |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1258135A CN1258135A (en) | 2000-06-28 |
| CN1120579C true CN1120579C (en) | 2003-09-03 |
Family
ID=18478296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 99126245 Expired - Fee Related CN1120579C (en) | 1998-12-21 | 1999-12-17 | Signal receiving device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3745910B2 (en) |
| CN (1) | CN1120579C (en) |
| TW (1) | TW443040B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7848180B2 (en) | 2005-10-28 | 2010-12-07 | Casio Computer Co., Ltd. | Antenna apparatus, receiving apparatus and watch using magnetic sensor |
| JP2008089496A (en) * | 2006-10-04 | 2008-04-17 | Casio Comput Co Ltd | Antenna circuit, receiving circuit, and timepiece |
| EP2187476B1 (en) | 2008-11-17 | 2014-03-05 | Casio Computer Co., Ltd. | Antenna device, reception device, and radio wave timepiece |
| JP4645732B2 (en) | 2008-12-10 | 2011-03-09 | カシオ計算機株式会社 | Antenna device, receiving device and radio clock |
-
1998
- 1998-12-21 JP JP36301198A patent/JP3745910B2/en not_active Expired - Fee Related
-
1999
- 1999-11-20 TW TW88120306A patent/TW443040B/en not_active IP Right Cessation
- 1999-12-17 CN CN 99126245 patent/CN1120579C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1258135A (en) | 2000-06-28 |
| TW443040B (en) | 2001-06-23 |
| JP2000188558A (en) | 2000-07-04 |
| JP3745910B2 (en) | 2006-02-15 |
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