CN112054078A - Width-saving design method and device of thin-film solar cell and thin-film solar cell - Google Patents
Width-saving design method and device of thin-film solar cell and thin-film solar cell Download PDFInfo
- Publication number
- CN112054078A CN112054078A CN201910487204.5A CN201910487204A CN112054078A CN 112054078 A CN112054078 A CN 112054078A CN 201910487204 A CN201910487204 A CN 201910487204A CN 112054078 A CN112054078 A CN 112054078A
- Authority
- CN
- China
- Prior art keywords
- sub
- cell
- film solar
- thin
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 160
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000012360 testing method Methods 0.000 claims abstract description 42
- 239000000126 substance Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 31
- 238000005457 optimization Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 13
- 238000004364 calculation method Methods 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a width-saving design method of a thin-film solar cell, relates to the technical field of thin-film solar cells, and can improve the conversion efficiency of the whole cell. The method comprises the following steps: s1, forming a thin film solar cell sample comprising a plurality of sub cells according to the first cell pitch width; s2, obtaining quantum efficiency test information of the sub-cells in the edge area and the middle area of the thin-film solar cell sample in the cell section width direction; and S3, optimizing the cell pitch width of each sub-cell in the edge area of the thin-film solar cell sample according to the quantum efficiency test information of the sub-cells in the edge area and the middle area, so that the current intensity of each sub-cell in the edge area is consistent with the current intensity of each sub-cell in the middle area.
Description
Technical Field
The invention relates to the technical field of thin film solar cells, in particular to a width-saving design method and device of a thin film solar cell and the thin film solar cell.
Background
The thin-film solar cell has the advantages of low raw material consumption, easy large-area continuous production, low pollution in the preparation process and the like.
The production process of the thin film battery comprises the following steps: (1) depositing a conductive film on the substrate; (2) scribing the conductive film into a plurality of areas along one direction of the substrate by utilizing laser scribing or mechanical scribing to form an insulating groove of the sub-battery, wherein the scribing process is generally called P1 scribing; (3) depositing a photon absorption layer on the substrate with the P1 scribing completed; (4) and with the scribing of P1 as a reference, scribing the photon absorption layer by laser scribing or mechanical scribing at a position shifted to the right (or left) by a certain distance (for example, 50-80 um) of the scribing line of P1, thereby forming a groove. Conductive structures connecting adjacent subcells may be subsequently formed in the trenches. This scribing process is commonly referred to as P2 scribing; (5) depositing a conductive film on the photon absorption layer subjected to the P2 scribing, and finally forming a conductive structure for connecting adjacent sub-cells by the groove formed by the P2 scribing due to the existence of the conductive film; (6) and with the P2 scribe line as a reference, the scribe line scribed on the P2 scribe line is shifted to the right (or left) by a certain distance (for example, 50-80 um) by laser scribing or mechanical scribing, so that the photon absorption layer and the conductive film are scribed together to form a plurality of sub-cells, and adjacent sub-cells form a series circuit through the conductive structure. This scribing process is commonly referred to as P3 scribing; (7) scribing all the film layers around the substrate by using laser or mechanical scribing, wherein the scribing width is 8-15 mm, and the scribing process is generally called as P4 scribing; (8) and continuing the subsequent packaging and laminating processes to manufacture the photovoltaic module.
The sub-battery is the minimum sub-unit of the thin film battery, and the output voltage is improved by serially connecting the sub-batteries. For the thin film cell formed by scribing through P1-P3 as described above, the width of each segment of the cell can be measured by the distance between two adjacent P1 scribing lines. In the conventional thin-film solar cell design recognized by the inventors, the optimum width (i.e., cell pitch width) of each sub-cell is estimated from the current density and voltage at the optimum power point. The inventor finds that even if the width of each sub-cell on the cell is designed to be the optimal width calculated from the optimal power point, the power of the actual cell is still far from the optimal power point.
Disclosure of Invention
In order to solve the problem, the invention provides a method and a device for designing the section width of a thin film solar cell and the thin film solar cell.
The embodiment of the disclosure provides a width-saving design method of a thin-film solar cell, which comprises the following steps:
s1, forming a thin film solar cell sample comprising a plurality of sub cells according to the first cell pitch width;
s2, carrying out quantum efficiency test on the sub-cells of the thin-film solar cell sample to obtain quantum efficiency test information of the sub-cells of the edge area and the middle area of the thin-film solar cell sample in the cell section width direction;
and S3, optimizing the cell pitch width of each sub-cell in the edge area of the thin-film solar cell sample according to the quantum efficiency test information of the sub-cells in the edge area and the middle area, so that the current intensity of each sub-cell in the edge area is consistent with the current intensity of each sub-cell in the middle area.
The embodiment of the present disclosure further provides a width-saving design device for a thin film solar cell, including:
the quantum efficiency testing device is used for carrying out quantum efficiency testing on the sub-cells of the thin-film solar cell sample so as to obtain quantum efficiency testing information of the sub-cells in the edge area and the middle area of the thin-film solar cell sample in the cell section width direction, and each sub-cell of the thin-film solar cell sample has a first cell section width;
and the computing device is used for optimizing the cell pitch width of each sub-cell in the edge area of the thin-film solar cell sample according to the quantum efficiency test information of the edge area and the middle area so as to enable the current intensity of each sub-cell in the edge area to be consistent with the current intensity of each sub-cell in the middle area.
Embodiments of the present disclosure also provide a thin film solar cell, including a plurality of sub-cells, the thin film solar cell including a middle region and an edge region; wherein each sub-cell of the middle region has a first cell pitch width; the sub-cells in the edge region have optimized cell section widths based on the first cell section width, and the optimized cell section widths enable the current intensity of the sub-cells in the edge region to be consistent with the current intensity of the sub-cells in the middle region.
In a related art, the cell pitch widths of all the sub-cells of the thin-film solar cell are the same, and the cell pitch widths of the sub-cells in the two side edge regions of the thin-film solar cell are not designed independently. For the thin-film solar cell, the film quality of the photon absorption layers in the edge regions at two sides is the worst region in the whole cell, and the Quantum Efficiency (QE) is low, so that the current density of the sub-cell in the edge region is obviously lower than that of the sub-cell in other regions, that is, the current intensity (current intensity: current density: sub-cell area) of the sub-cell in the edge region is also lower than that of the sub-cell in other regions. Since the entire thin film solar cell is formed by connecting the sub-cells in series, the current intensity of the entire series of thin film solar cells is determined by the sub-cell with the lowest current intensity among the sub-cells, which affects the efficiency of the entire cell.
The embodiment of the invention provides a width saving design method of a thin film solar cell, aiming at the conditions that light absorption layers on two sides of the thin film solar cell are thinner relative to a middle area and the quality of a film layer is poorer, the width saving of the edge of the thin film solar cell is optimally designed, so that the current intensity of each sub cell in the edge area is consistent with the current intensity of the middle area, the generated power of each sub cell can be consistent as much as possible, and the conversion efficiency of the whole cell can be improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention.
Fig. 1 is a schematic diagram of a cell pitch design scheme of a thin film solar cell provided by the related art;
fig. 2 is a schematic structural diagram of a thin film solar cell provided by the related art;
fig. 3 is a flowchart of a method for designing a width of a thin film solar cell according to some embodiments of the present disclosure;
fig. 4 is a flowchart of a second method for designing a width of a thin film solar cell according to some embodiments of the present disclosure;
fig. 5 is a flowchart illustrating a third method for designing a width of a thin film solar cell according to some embodiments of the present disclosure;
FIG. 6 shows quantum efficiency test results for a thin film solar cell sample according to some embodiments of the present disclosure;
FIG. 7 shows a cell pitch width of a sub-cell designed according to FIG. 6, using an amorphous silicon thin film cell as an example;
FIG. 8 shows a cell pitch width of another sub-cell designed by way of example of an amorphous silicon thin film cell;
FIG. 9 shows a cell pitch width of another sub-cell designed by way of example of an amorphous silicon thin film cell;
fig. 10 is a schematic diagram of a thin film solar cell provided by some embodiments of the present disclosure;
fig. 11 is a schematic view of a device for designing a width of a thin film solar cell according to some embodiments of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention without any inventive step, are within the scope of protection of the invention.
In the process of preparing the thin-film solar cell, the uniformity of the film layer is always a key index influencing the quality of the film layer, and the uniformity has great influence on the electrical performance parameters of the solar cell. As shown in fig. 1, it is a cell width saving design scheme of a thin film solar cell provided in the related art. As shown in fig. 2, the substrate 4 is provided with a first conductive film layer 5, a photon absorption layer 6 and a second conductive film layer 7, and the substrate 4 is scribed through P1/P2/P3 to form a series of cells connected in series. The battery section width of each sub-battery of the battery string is D. The solar thin film cell scribed by the P1/P2/P3 is shown in figure 1, and uniform scribing lines 3 are distributed in a film layer 1 on a substrate 4. That is, the widths of the sub-cells of the thin film solar cell are uniform and consistent, and theoretically, the current intensity of each sub-cell is the same. Current density is the area of the subcell. Ideally, the current density of each segment of the sub-battery should be consistent due to simultaneous coating. In practice, however, the current intensity of each segment of the sub-battery is not uniform due to the problem of coating uniformity of each region. Because the sub-cells are connected in series in the whole thin-film solar cell, the current intensity of the whole series of thin-film solar cells is determined by the sub-cell with the lowest current intensity in the sub-cells, namely the current intensity of the sub-cell in the side edge area determines the current intensity of the whole cell, and the current intensity is also the key for influencing the efficiency of the whole cell.
According to the technical scheme provided by the embodiment of the disclosure, on the basis of the uniform cell section width D of the existing thin-film solar cell, the cell section widths of the sub-cells in the areas with poor quality of the edge film layers on the two sides are increased, so that the current intensities of the sub-cells in the edge areas are increased, the current intensities of all the sub-cells are matched, and the conversion efficiency of the whole cell is improved. The method has the advantages of no need of improving the cost and obvious effect.
The thin film solar cell of the present disclosure includes, but is not limited to, an amorphous silicon thin film cell, a microcrystalline silicon thin film cell, a copper indium gallium selenide thin film cell, a telluride thin film cell, and the like forming a series circuit.
The aspects of the present disclosure are further described below.
As shown in fig. 3, some embodiments of the present disclosure provide a method for designing a pitch width of a thin film solar cell, including:
s1, forming a thin film solar cell sample comprising a plurality of sub cells according to the first cell pitch width;
the thin-film solar cell sample is the same as the thin-film solar cell to be subjected to cell width saving design, the same production line is used for production, the materials and the production processes of all film layers are the same, and only the cell width saving of the sub-cells is different.
This step can form a thin film solar cell sample as shown in fig. 1 according to the related art. The cell pitch widths of the thin-film solar cell samples are all equal, for example, the first cell pitch width is D. In this embodiment, on the basis of a thin-film solar cell sample with a cell pitch width of D, the cell pitch widths of the sub-cells at the edge of the sample are optimally designed.
In addition, in order to improve the test accuracy and the optimization effect, a plurality of thin-film solar cell samples can be formed in the step.
S2, carrying out quantum efficiency test on the sub-cells of the thin-film solar cell sample to obtain quantum efficiency test information of the sub-cells of the edge area and the middle area of the thin-film solar cell sample in the cell section width direction;
the battery pitch width direction is the distribution direction of the sub-batteries which are mutually connected in series. If the thin film solar cell is formed by scribing the P1/P2/P3, the cell width direction is a direction perpendicular to the scribing direction of the P1/P2/P3. The purpose of the step is to obtain quantum efficiency test information of the sub-cells in the edge region and the middle region of the cell in the cell width saving direction, so that the cell width of each sub-cell in the edge region is optimized according to the quantum efficiency test information of the sub-cells in the middle region in the subsequent step.
And S3, optimizing the cell pitch width of each sub-cell in the edge area of the thin-film solar cell sample according to the quantum efficiency test information of the sub-cells in the edge area and the middle area, so that the current intensity of each sub-cell in the edge area is consistent with that in the middle area.
For a thin film solar cell, the quality of the film layer (mainly the photon absorption layer) in the edge area is poor, and generally, the quality of the film layer is worse as the film layer is closer to the edge, and the quantum efficiency of the corresponding sub-cell is lower under the condition that the section width of the sub-cell is the same and the length of the sub-cell is the same. In step S3, the cell pitch width of each sub-cell in the edge region is optimized, and the cell pitch width of each sub-cell in the edge region is appropriately increased to compensate for the low quantum efficiency caused by the poor quality of the edge film layer, so that the current intensity of each sub-cell in the edge region is finally consistent with the current intensity of the middle region. The specific optimization method in this step is not limited, as long as the purpose of making the current intensity of each sub-battery in the edge region consistent with the current intensity of the middle region can be achieved.
In some embodiments, the average of the quantum efficiency test values of the sub-cells of the middle region and the quantum efficiency test values of the sub-cells of the edge region are obtained in step S2. In step S2, an optimized value of the cell pitch width of each sub-cell in the edge region is determined by using the average quantum efficiency test value of each sub-cell in the middle region and the quantum efficiency test value of each sub-cell in the edge region.
In some embodiments, as shown in fig. 4, step S2 includes:
s21, determining a geometric center of the thin-film solar cell sample in the cell width direction, determining corresponding areas of a plurality of sub-cells on two sides of the geometric center as middle areas, and testing the quantum efficiency and the average value of the quantum efficiency of each sub-cell in the middle areas;
in step S21, it is only necessary to measure the quantum efficiency of a plurality of sub-cells on both sides of the geometric center and calculate the average value thereof.
S22, determining the preset length range from the two side edges of the thin-film solar cell sample as the edge area of the thin-film solar cell sample in the cell width saving direction of the thin-film solar cell sample, and measuring the quantum efficiency of each sub-cell in the edge area.
The predetermined length is, for example, 40mm to 90 mm. For example, if the width of the thin film solar cell sample is 635mm, the edge region may be in the range of 60mm from the edge. For example, in some other embodiments, the edge region may be within 70mm from the edge, or within 90mm from the edge.
The edge region can be determined empirically by one skilled in the art. The edge area is generally determined by the skilled person according to the width of the thin film solar cell sample and the coating uniformity. In step S22, the quantum efficiency of each sub-cell in the edge region needs to be measured.
In step S3, the optimized cell pitch of each sub-cell in the edge region is calculated according to the quantum efficiency average value of several sub-cells in the middle region calculated in step S21 and the quantum efficiency of each sub-cell in the edge region measured in step S22. The number of the plurality of sub-cells in the middle area selected in the step S21 can be selected according to actual conditions, for example, 2-5 sub-cells can be selected on both sides of the geometric center to perform a quantum efficiency test, that is, 4-10 groups of data are measured in total.
In step S3, the optimized cell pitch width of each sub-cell in the edge region of the thin-film solar cell sample can be sequentially calculated according to the following formula:
Dn＝D+D*(Q-Qn)/Q，
wherein Q isnMeasured quantum efficiency for one subcell in the edge region of the thin film solar cell sample, DnAnd D is the first cell pitch width, and Q is the average value of quantum efficiencies measured by each sub-cell in the middle area of the thin-film solar cell sample.
In other embodiments, as shown in fig. 5, step S2 includes:
s201, testing the quantum efficiency of each sub-cell of the thin-film solar cell sample in the cell width saving direction;
s202, determining a geometric center of the thin-film solar cell sample in the cell width direction, determining corresponding areas of a plurality of sub-cells on two sides of the geometric center as middle areas, and calculating an average value of quantum efficiency of each sub-cell in the middle areas;
and S203, determining the sub-cells with the quantum efficiencies lower than the preset percentage of the average value of the quantum efficiencies of the sub-cells in the middle area as the sub-cells in the edge area of the thin-film solar cell sample. The preset percentage is, for example, 3%.
The closer to the edge the thin film solar cell sample is, the poorer the film quality and the lower the measured quantum efficiency of the subcell. In step S02, a region of the edge, which is lower than the preset percentage of the average value of the quantum efficiencies of the sub-cells of the middle region calculated in step S202, may be determined as the edge region according to the measured quantum efficiencies of the sub-cells of step S201. The regions except the edge region are middle regions, but the quantum efficiency of each sub-cell in the middle region does not need to be measured completely, and generally only a plurality of sub-cells on two sides of the geometric center of the sample need to be measured.
Similarly, in step S3, the optimized cell pitch width of each sub-cell in the edge region of the thin-film solar cell sample can be sequentially calculated according to the following formula:
Dn＝D+D*(Q-Qn)/Q，
in some embodiments, the thin film solar cell may be, for example, a thin film solar cell involving scribing with P1/P2/P3. The thin film solar cell sample in the step S1 is also scribed by using the same P1/P2/P3, that is, the thin film solar cell sample is scribed according to the first cell pitch width in the step S1 to form the thin film solar cell sample comprising a plurality of sub cells.
In some embodiments, a scribing margin area is reserved on two sides of the thin film solar cell sample; the edge area of the thin-film solar cell sample starts from the inner edge of the scribing allowance area. The cell pitch width of the sub-cell in the optimized edge region is generally larger than that of the first cell pitch, which means that the optimized cell region expands towards two sides and occupies a part of the scribing margin region.
The scheme of the present disclosure will be further described below by taking an amorphous silicon thin film battery as an example.
Example one
The method comprises the steps of carrying out Quantum Efficiency (QE) test after cutting an existing thin film battery, selecting sub-batteries on the edges of two sides of a substrate (for example, 1-3 sub-batteries are respectively selected on two sides, and the specific number of the sub-batteries can be determined according to the film quality), carrying out QE data comparison analysis on any sub-battery or a plurality of sub-batteries in a middle area, and then correspondingly adjusting the section width of the sub-battery on the edge according to a QE difference value, for example, the QE of the sub-battery on the edge is 13% lower than that of the sub-battery in the middle area, and the section width of the sub-battery on the edge is correspondingly increased by 13% than that. The specific implementation method comprises the following steps:
1. forming a thin film battery sample according to the existing design scheme of uniform battery section width;
2. performing QE tests on the sub-cells in the edge region and the middle region of the thin film cell sample, as shown in fig. 6;
3. designing the battery section width of the sub-battery in the edge area according to the measured QE value;
4. the scribing parameters of P1, P2, P3 and P4 are correspondingly adjusted.
For example, a sample of thin film solar cells formed according to the conventional uniform cell pitch width design includes 39 sub-cells, and the cell pitch widths of the sub-cells are 15.5 mm. And selecting the section of the sub-battery at the most edge as the sub-battery at the edge area for optimizing the battery section width. The QE of the edge region sub-cell is 13% lower than the QE of the middle region sub-cell, and the edge region sub-cell pitch width is correspondingly increased by 13% over the middle region sub-cell pitch width. The optimized battery section width is
d＝15.5*(1+13％)＝17.5mm。
As shown in fig. 7, the cell pitch widths of the sub-cells (serial number 2-38) in the middle area of the optimized thin-film solar cell are all 15.5 mm; the cell pitch width of the sub-cells (serial numbers 1 and 39) at both side edges was 17.5 mm.
Example two
For example, a sample of thin film solar cells formed according to the conventional uniform cell pitch width design includes 39 sub-cells, and the cell pitch widths of the sub-cells are 15.5 mm. The following is an optimization design based on this comparison pitch width design.
And (3) cutting the conventional thin film battery with equal pitch width, and then carrying out a Quantum Efficiency (QE) test. The test method comprises the following steps:
the QE data can be tested one by one for all the sub-batteries, and the sub-batteries contained in the two side edge areas of the thin film battery substrate with the width of 60mm (the quality of the film layer is worse as the film layer is closer to the edge) and any 3-5 sub-batteries in the middle area can be selected for QE testing. And comparing and analyzing the QE value of the sub-cell at the edge region with the average QE value of the sub-cell at the middle region, and then performing width saving design again on the structure of the existing thin film battery with equal width saving according to the difference of the QE values.
The specific design process is as follows: if QE values of the sub-batteries at the two side edges are respectively marked as Qn(n is the number of sub-batteries contained in the 60mm area of the two side edges), the average QE value of the sub-battery in the middle area is Q, and the difference Q between the QE value of the sub-battery in each edge area and the average QE value of the sub-battery in the middle area isn＝(Q-Qn)/Q*100％
For convenience of calculation, if (Q-Q)n) The result of the calculation of/Q is 0-3%, and Q is calculated in the subsequent calculationnTaking the value of 0%; if the calculation result is 3.1% -5%, q is calculated in the subsequent processnTaking a value of 5%; if the calculation result is 5.1% -10%, q is calculated in the subsequent processnTaking a value of 10%; if the calculation result is 10.1% -15%, q is calculated in the subsequent processnTaking a value of 15%; if the calculation result is 15.1% -20%, q isnTaking a value of 20%; and so on. Of course, qnAnd the value can be obtained according to the actual calculation result.
For the same material, the current density J is proportional to QE, and the current intensity I is J × S (S is the effective area of the sub-cell), and in order to match the current intensities I of the sub-cells, the combination of the QE values and the effective areas of the sub-cells needs to be considered. In the case of the same length of the sub-cells, only the cell pitch width of the sub-cells needs to be considered.
For the silicon germanium thin film solar cell, the node width of the sub-cell is 15.50mm, and the insulation width is deducted in the areas of 60mm at the two side edges, and the method further comprises the following steps: (60-15)/15.5 ≈ 3 segmented cells. Assuming the direction from the outermost edge to the center of the two sides, the tested QE values are Q in sequence1＝17.28，Q2＝18.15，Q3＝18.62，Q4＝18.53，Q5＝18.20，Q617.31, wherein Q1、Q6Respectively, the QE values of the sub-cells at the outermost edges on the two sides. The average value Q of the quantum efficiencies of the individual subcells in the middle region is 19.11.
[(Q-Qn)/Q]The values calculated by 100% are in turn: 9.6%, 5.0%, 2.7%, 3.0%, 4.8%, 9.4%, then for convenience of calculation, in order: q. q.s1＝10％，q2＝5％，q3＝0％，q4＝0％，q5＝5％，q 610%. Of course, in other embodiments, q may be directly expressedn＝[(Q-Qn)/Q]100% value.
In order to match the current intensities of all the sub-cells, the width of the sub-cells at the two side edge regions needs to be optimized:
Q1the optimized corresponding sub-battery pitch width is equal to the existing sub-battery pitch width (1+ q)1) 15.50 × 1+ 10% ═ 17.05 mm; in a similar manner to that described above,
Q2after optimization, the section width of the corresponding sub-battery is 16.28mm,
Q3after optimization, the section width of the corresponding sub-battery is 15.50mm,
Q4after optimization, the section width of the corresponding sub-battery is 15.50mm,
Q5after optimization, the section width of the corresponding sub-battery is 16.28mm,
Q6and after optimization, the section width of the corresponding sub-battery is 17.05 mm.
The pitch width of the battery is redesigned according to the optimization result, as shown in fig. 8. The cell pitch width of the subcells (the subcells with the serial numbers of 4-36) in the middle area of the optimized thin-film solar cell is 15.5 mm; the battery pitch widths of the sub-batteries (the sub-batteries with the serial numbers of 1-3 and 37-39) at the two side edges are respectively as follows:
D1＝17.05mm，D2＝16.28mm，D3＝15.5mm；
D39＝17.05mm，D38＝16.28mm，D37＝15.5mm。
the implementation process is as follows:
1. forming a battery sample according to the existing battery pitch width design;
2. performing QE test on the sub-batteries at the two side edges and the middle area of the substrate;
3. calculating the width of each sub-battery according to the relationship between the QE test value and the current intensity;
4. depositing a first conductive film, setting the scribing interval (pitch width) of a P1 scribing machine to be consistent with the calculated result, and scribing;
5. depositing a photon absorption layer on a substrate;
6. performing P2 scribing by taking a P1 scribing line as a reference;
7. depositing a second conductive film on the photon absorption layer;
8. performing P3 scribing by taking a P2 scribing line as a reference;
9. etching the film layer around the substrate (with the width of 8-15 mm) to form an insulating area;
10. and manufacturing the assembly through subsequent packaging and laminating.
EXAMPLE III
After optimization, the edge area has larger cell section width, and the space occupied by the sub-cells with the same section number is larger. In one embodiment, the scribe margin area 100 at the edge of the cell shown in fig. 10 can be designed smaller to compensate for the extended space usage at the edge area. Or the width of the battery piece can be designed to be larger directly.
In other embodiments, the cell width of all the sub-cells may be optimized to pool the occupied space under the condition that the total effective area of the cells is not changed.
In some embodiments, the optimized cell pitch width is calculated as follows:
after optimizationCell bay width D of middle zone subcellsIn＝NDOriginal sourceV (P + N), where N is the total number of sub-cells, DOriginal sourceOptimizing the pitch width of the front sub-battery; p is deviation q of QE value of each sub-batterynThe sum of (a) and (b).
Optimizing the cell node width Dn of each sub-cell in the edge area as DIn*(qn+1)。
Taking the sige thin film cell as an example, if the total number of the whole cell is 39 sub-cells, the width of each sub-cell divided according to the existing related art thin film solar cell sample is 15.50mm, and the step of deducting the insulation width of 8-15 mm in each 60mm area at the two side edges further includes: (60-15)/15.5 ≈ 3 segmented cells.
How to further optimize the design of the cell pitch width based on the design of the cell pitch width is described below. Assuming a tested QE value Q1＝17.28，Q2＝18.15，Q3＝18.62，Q4＝18.53，Q5＝18.20，Q6＝17.31(Q1、Q6Respectively, two side outermost edge subcells QE values). The QE values of the sub-cells in the middle area generally do not differ much. QIn＝19.11。
According to qn＝(QIn-Qn)/QInCalculating QE value deviation q of each sub-battery by 100%n。
(QIn-Qn)/QInThe results of 100% calculation were 10%, 5.0%, 2.7%, 3.0%, 4.8% and 9.4% in order. For convenience of calculation, the embodiment still takes the value of two according to the embodiment, namely q1Value of 10%, q2Value 5%, q3Value 0%, q4Value 0%, q5Value 5%, q6The value is 10%.
In order to match the current intensities of all the sub-batteries, the pitch width of each sub-battery needs to be optimized, and the battery pitch width of each sub-battery is calculated according to the above optimization method:
the pitch width of the sub-battery in the middle area after optimization is as follows:
Din＝NDOriginal source/(P+N)
＝NDOriginal source/(q1+q2+q3+q4+q5+q6+N)＝39*15.5/(10％+5％+0+0+5％+10％+39)
＝15.38mm；
The node width of the sub-battery corresponding to Q1 is DIn*(q1+1)＝15.38*(1+10％)＝16.92mm，
The node width of the sub-battery corresponding to the Q2 is 16.15mm,
the node width of the sub-battery corresponding to the Q3 is 15.38mm,
the node width of the sub-battery corresponding to the Q4 is 15.38mm,
the node width of the sub-battery corresponding to the Q5 is 16.15mm,
the node width of the sub-battery corresponding to the Q6 is 16.92 mm.
The pitch width of the battery is redesigned according to the optimization result, as shown in fig. 9. The cell pitch width of the sub-cells (serial number 4-36 sub-cells) in the middle area of the thin-film solar cell is 15.38 mm; the battery pitch widths of the sub-batteries (the sub-batteries with the serial numbers of 1-3 and 37-39) at the two side edges are respectively as follows:
D1＝16.92mm，D2＝16.15mm，D3＝15.38mm；
D39＝16.92mm，D38＝16.15mm，D37＝15.38mm。
in this example, according to DIn＝NDOriginal sourceAnd (P + N) optimizing the cell pitch width of the sub-cells in the middle region, wherein the optimized cell pitch width in the middle region is reduced, the pitch width in the edge region is increased, and the occupied space of each sub-cell on the whole substrate is unchanged or is not changed greatly. Further, if the total occupied space of the sub-cells is still insufficient according to the method of the present embodiment, a portion of the scribe margin area 100 may be occupied.
As shown in fig. 11, an embodiment of the present disclosure also provides a width-saving design apparatus 20 for a thin-film solar cell, including:
a quantum efficiency testing device 21, configured to perform a quantum efficiency test on the sub-cells of the thin-film solar cell sample to obtain quantum efficiency testing information of the sub-cells in the edge region E and the middle region M in the cell pitch width direction of the thin-film solar cell sample, where each sub-cell of the thin-film solar cell sample has a first cell pitch width;
and the computing device 22 is used for optimizing the cell pitch width of each sub-cell in the edge area E of the thin-film solar cell sample according to the quantum efficiency test information of the edge area E and the middle area M, so that the current intensity of each sub-cell in the edge area E is consistent with that of each sub-cell in the middle area M.
The computing device 22 is, for example, a computer. The computing device 22 may feed back the optimized cell pitch width to the scoring device 30. The scoring device 30 scores according to the optimized cell pitch width.
As shown in fig. 10, an embodiment of the present disclosure also provides a thin film solar cell including a plurality of sub-cells, the thin film solar cell including a middle region M and an edge region E; wherein each sub-cell of the middle region M has a first cell pitch width; each sub-cell of the edge region E has a second cell pitch width, which is greater than the first cell pitch width.
In some embodiments, the cell pitch width of each sub-cell of the edge region E varies with the distribution position of each sub-cell. If the distribution position of the sub-cells in the edge region E is closer to both sides, the cell pitch width of the sub-cell is larger, that is, the cell pitch width of the sub-cell is proportional to the film quality. The poorer the film quality, the larger the cell pitch width of the subcell.
In some embodiments, each sub-cell of the edge region E has a cell pitch width optimized based on the first cell pitch width, and the optimized cell pitch width based on the first cell pitch width enables the current intensity of the sub-cell of the edge region E to be consistent with the current intensity of the sub-cell of the middle region M. The optimization process can be as described above and will not be described in detail here.
In some embodiments, the optimized battery pitch width based on the first battery pitch width is:
Dn＝D+D*(Q-Qn)/Q，
wherein a film is providedThe solar cell has a thin-film solar cell sample with equal number of sub-cells, the cell pitch widths of the sub-cells of the thin-film solar cell sample are all the first cell pitch width, DnCell width of a sub-cell of the edge region E of the thin film solar cell, QnAnd D is the quantum efficiency of the sub-cell corresponding to the sub-cell on the thin-film solar cell sample, D is the first cell pitch width, and Q is the average value of the quantum efficiencies measured by the sub-cells in the middle area of the thin-film solar cell sample. The middle area of the thin-film solar cell sample is the corresponding area of a plurality of sub-cells on two sides of the geometric center of the thin-film solar cell sample.
The edge region E is a preset length range extending from the edge of the thin film solar cell to the center in the cell width direction. The edge region E may also be divided according to the quantum efficiency of each part of the thin film solar cell (the quantum efficiency of each part should be measured in the case where each part has the same area). For example, the corresponding region of the sub-cell with the quantum efficiency lower than the preset percentage of the average value of the quantum efficiencies of the sub-cells in the middle region is determined as the edge region of the thin-film solar cell sample. The preset percentage may be determined according to an overall variation range of the quantum efficiency of each sub-cell. For example, if the minimum value of the quantum efficiency of each sub-cell is 10% of the maximum value, sub-cells greater than 3% are determined as sub-cells of the edge region, for which cell width saving optimization is required.
It will be appreciated by those skilled in the art that although the region to be optimized is typically the region at the edge of the cell, the present scheme may be optimized for any region where the film quality is poor and quantum efficiency is low. In the latter method of the edge region, the edge region of the present disclosure may not be limited to the regions of the two side edges of the cell described herein, but may be broadly referred to as any region where the film quality is poor and the quantum efficiency is low.
The proposal only optimizes the cell pitch width of the sub-cells in the edge region E, and the cell pitch width of the sub-cells in the middle region can maintain the original value.
In some embodiments, the thin film solar cell comprises: amorphous silicon thin film batteries, microcrystalline silicon thin film batteries, copper indium gallium selenide thin film batteries and telluride diaphragm batteries.
According to the scheme, the cell width saving of the sub-cells on two sides of the edge of the thin-film solar cell is optimized, the current limiting effect can be eliminated, and the conversion efficiency of the whole cell is improved. The scheme disclosed by the invention can achieve the same effect as high-cost coating equipment through low-cost (or zero-cost) width-saving design. The high-cost plating equipment herein refers to high-cost plating equipment capable of improving the uniformity of plating.
According to the thin film solar cell, the optimized cell width is adopted for the cell width saving of the sub-cells at the two sides of the edge, the current limiting effect can be eliminated, and the conversion efficiency of the whole cell can be improved.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A method for designing the width of a thin film solar cell is characterized by comprising the following steps:
s1, forming a thin film solar cell sample comprising a plurality of sub cells according to the first cell pitch width;
s2, carrying out quantum efficiency test on the sub-cells of the thin-film solar cell sample to obtain quantum efficiency test information of the sub-cells of the edge area and the middle area of the thin-film solar cell sample in the cell section width direction;
and S3, optimizing the cell pitch width of each sub-cell in the edge area of the thin-film solar cell sample according to the quantum efficiency test information of the sub-cells in the edge area and the middle area, so that the current intensity of each sub-cell in the edge area is consistent with the current intensity of each sub-cell in the middle area.
2. The pitch width design method of claim 1, wherein step S2 comprises:
determining a geometric center of the thin-film solar cell sample in the cell pitch width direction, determining corresponding areas of a plurality of sub-cells on two sides of the geometric center as middle areas, and testing the quantum efficiency and the average value of the quantum efficiency of each sub-cell in the middle areas;
determining a preset length range from the edges of two sides of the thin-film solar cell sample as an edge area of the thin-film solar cell sample in the cell width saving direction of the thin-film solar cell sample, and measuring the quantum efficiency of each sub-cell in the edge area.
3. The pitch width design method of claim 1, wherein step S2 comprises:
testing the quantum efficiency of each sub-cell of the thin-film solar cell sample in the cell width direction;
determining a geometric center of the thin-film solar cell sample in the cell pitch width direction, determining corresponding areas of a plurality of sub-cells on two sides of the geometric center as the middle area, and calculating the average value of quantum efficiency of each sub-cell in the middle area;
and determining the sub-cells with the quantum efficiency lower than the preset percentage of the average value of the quantum efficiency of the sub-cells in the middle area as the sub-cells in the edge area of the thin-film solar cell sample.
4. The pitch design method according to any one of claims 1 to 3, wherein the step S3 is to calculate the optimized cell pitch of each sub-cell in the edge region of the thin-film solar cell sample according to the following formula:
Dn＝D+D*(Q-Qn)/Q，
wherein Q isnMeasured quantum efficiency for one subcell in the edge region of the thin film solar cell sample, DnAnd D is the first cell pitch width, and Q is the average value of quantum efficiencies measured by each sub-cell in the middle area of the thin-film solar cell sample.
5. The pitch width design method of claim 4, wherein the preset percentage is 3%.
6. The pitch width design method of claim 1, wherein the predetermined length is 40mm to 90 mm.
7. The pitch width design method according to claim 1, wherein, in step S1,
and scribing the thin-film solar cell sample according to the first cell pitch width to form the thin-film solar cell sample comprising a plurality of sub-cells.
8. The pitch design method according to claim 2, wherein in step S1, scribing margin regions are reserved on two sides of the thin film solar cell sample; the edge area of the thin-film solar cell sample starts from the inner edge of the scribing allowance area.
9. A width-saving design device of a thin film solar cell is characterized by comprising:
the quantum efficiency testing device is used for carrying out quantum efficiency testing on the sub-cells of the thin-film solar cell sample so as to obtain quantum efficiency testing information of the sub-cells in the edge area and the middle area of the thin-film solar cell sample in the cell section width direction, and each sub-cell of the thin-film solar cell sample has a first cell section width;
and the computing device is used for optimizing the cell pitch width of each sub-cell in the edge area of the thin-film solar cell sample according to the quantum efficiency test information of the edge area and the middle area so as to enable the current intensity of each sub-cell in the edge area to be consistent with the current intensity of each sub-cell in the middle area.
10. A thin film solar cell comprising a plurality of sub-cells, wherein the thin film solar cell comprises a middle region and an edge region; wherein the content of the first and second substances,
each sub-cell of the middle region has a first cell pitch width;
the sub-cells in the edge region have optimized cell section widths based on the first cell section width, and the optimized cell section widths enable the current intensity of the sub-cells in the edge region to be consistent with the current intensity of the sub-cells in the middle region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910487204.5A CN112054078B (en) | 2019-06-05 | 2019-06-05 | Method and device for designing width of thin film solar cell and thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910487204.5A CN112054078B (en) | 2019-06-05 | 2019-06-05 | Method and device for designing width of thin film solar cell and thin film solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112054078A true CN112054078A (en) | 2020-12-08 |
| CN112054078B CN112054078B (en) | 2024-03-08 |
Family
ID=73609286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910487204.5A Active CN112054078B (en) | 2019-06-05 | 2019-06-05 | Method and device for designing width of thin film solar cell and thin film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112054078B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024036557A1 (en) * | 2022-08-18 | 2024-02-22 | 宁德时代新能源科技股份有限公司 | Solar cell and preparation method therefor |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002076381A (en) * | 2000-08-23 | 2002-03-15 | Kanegafuchi Chem Ind Co Ltd | Thin film solar battery module |
| CN101964379A (en) * | 2010-08-16 | 2011-02-02 | 福建铂阳精工设备有限公司 | Thin film solar cell template current density compensation method |
| KR20110037678A (en) * | 2009-10-07 | 2011-04-13 | 엘지전자 주식회사 | Thin film type solar cell module and manufacturing method thereof |
| CN102082198A (en) * | 2010-09-30 | 2011-06-01 | 深圳市创益科技发展有限公司 | High-power low-voltage silicon-based thin film solar cell and manufacturing method thereof |
| JP2013211255A (en) * | 2012-02-27 | 2013-10-10 | Asahi Glass Co Ltd | Base with transparent conductive oxide films |
| CN103872179A (en) * | 2014-03-05 | 2014-06-18 | 广东汉能光伏有限公司 | Preparation method capable of improving efficiency of thin film solar cell |
| CN104701397A (en) * | 2013-12-07 | 2015-06-10 | 威海中玻光电有限公司 | Silicon-based thin-film solar cell structure and processing technique thereof |
| CN104904021A (en) * | 2012-11-05 | 2015-09-09 | 索莱克赛尔公司 | Systems and methods for monolithically isled solar photovoltaic cells and modules |
-
2019
- 2019-06-05 CN CN201910487204.5A patent/CN112054078B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002076381A (en) * | 2000-08-23 | 2002-03-15 | Kanegafuchi Chem Ind Co Ltd | Thin film solar battery module |
| KR20110037678A (en) * | 2009-10-07 | 2011-04-13 | 엘지전자 주식회사 | Thin film type solar cell module and manufacturing method thereof |
| CN101964379A (en) * | 2010-08-16 | 2011-02-02 | 福建铂阳精工设备有限公司 | Thin film solar cell template current density compensation method |
| CN102082198A (en) * | 2010-09-30 | 2011-06-01 | 深圳市创益科技发展有限公司 | High-power low-voltage silicon-based thin film solar cell and manufacturing method thereof |
| JP2013211255A (en) * | 2012-02-27 | 2013-10-10 | Asahi Glass Co Ltd | Base with transparent conductive oxide films |
| CN104904021A (en) * | 2012-11-05 | 2015-09-09 | 索莱克赛尔公司 | Systems and methods for monolithically isled solar photovoltaic cells and modules |
| CN104701397A (en) * | 2013-12-07 | 2015-06-10 | 威海中玻光电有限公司 | Silicon-based thin-film solar cell structure and processing technique thereof |
| CN103872179A (en) * | 2014-03-05 | 2014-06-18 | 广东汉能光伏有限公司 | Preparation method capable of improving efficiency of thin film solar cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024036557A1 (en) * | 2022-08-18 | 2024-02-22 | 宁德时代新能源科技股份有限公司 | Solar cell and preparation method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112054078B (en) | 2024-03-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Liu et al. | Highly efficient CIGS solar cells based on a new CIGS bandgap gradient design characterized by numerical simulation | |
| CN108932557A (en) | A kind of Short-term Load Forecasting Model based on temperature cumulative effect and grey relational grade | |
| CN102187471B (en) | Silicon thin film solar cell and method for manufacturing same | |
| CN106876518B (en) | Thin-film solar cells scoring device and method | |
| US20230361238A1 (en) | Method for manufacturing monocrystalline silicon wafer containing arced side, method for manufacturing monocrystalline silicon cell, and photovoltaic module | |
| CN101937948A (en) | Mask plate for preparing receiver of light-gathering film battery | |
| CN103618500A (en) | Testing and grading method for crystalline silicon solar cell | |
| CN112054078A (en) | Width-saving design method and device of thin-film solar cell and thin-film solar cell | |
| WO2023060924A1 (en) | Thin-film solar cell structure and preparation method therefor | |
| CN210224048U (en) | Thin film solar cell | |
| JP2021528835A (en) | Solar cell array and photovoltaic module | |
| Kanneboina | The simulated performance of c-Si/a-Si: H heterojunction solar cells with nc-Si: H, µc-Si: H, a-SiC: H, and a-SiGe: H emitter layers | |
| CN104701397B (en) | A kind of silicon-based film solar cells structure and processing technology | |
| CN102903791B (en) | Manufacturing method and system of thin-film solar cells | |
| CN102790131A (en) | Design method for grid electrode with gradually changed width | |
| CN110993726A (en) | Printing process of solar cell | |
| CN112054093A (en) | Method for improving PERC battery back contact | |
| Gress et al. | Quantification of power losses of the interdigitated metallization of crystalline silicon thin-film solar cells on glass | |
| CN101383357B (en) | Thin-film solar cell module and processing method thereof | |
| CN201853727U (en) | Mask plate for preparing receiver of condensing thin-film battery | |
| CN117976766A (en) | Grid line sectional forming method | |
| CN214542250U (en) | Back side graph structure of solar double-sided battery and solar double-sided battery | |
| CN203596355U (en) | Silicon-based film solar cell structure | |
| CN219832673U (en) | Perovskite group battery and group cluster of adjustable series resistance | |
| CN209626232U (en) | Solar battery sheet electrode structure at right side |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20211102 Address after: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Applicant after: Dongjun new energy Co.,Ltd. Address before: No.38, Paradise Street, Yanqi Economic Development Zone, Huairou District, Beijing Applicant before: Lingfan new energy technology (Beijing) Co.,Ltd. |
|
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |