CN112038887A - Vertical cavity surface emitting laser and preparation method thereof - Google Patents

Vertical cavity surface emitting laser and preparation method thereof Download PDF

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Publication number
CN112038887A
CN112038887A CN202010959119.7A CN202010959119A CN112038887A CN 112038887 A CN112038887 A CN 112038887A CN 202010959119 A CN202010959119 A CN 202010959119A CN 112038887 A CN112038887 A CN 112038887A
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layer
active layer
distributed bragg
cavity surface
surface emitting
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曾评伟
蔡文必
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Xiamen Sanan Integrated Circuit Co Ltd
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Xiamen Sanan Integrated Circuit Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention provides a vertical cavity surface emitting laser and a preparation method thereof, belonging to the technical field of semiconductor lasers. The vertical cavity surface emitting laser comprises a substrate, and a first distributed Bragg reflection layer, a first active layer, a tunneling layer, a second active layer and a second distributed Bragg reflection layer which are sequentially formed on the substrate, wherein a first electrode is formed on one side of the substrate, which is far away from the first distributed Bragg reflection layer, and a second electrode is formed on one side of the second distributed Bragg reflection layer, which is far away from the second active layer. The first active layer in the vertical cavity surface emitting laser assists the second active layer to emit light, so that carrier supplement in the resonant cavity is accelerated, and the operation bandwidth is improved.

Description

Vertical cavity surface emitting laser and preparation method thereof
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a vertical cavity surface emitting laser and a preparation method thereof.
Background
A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a semiconductor Laser, and unlike a general edge-Emitting Laser in which Laser light is emitted from an edge, the VCSEL emits Laser light perpendicularly to a top Surface. The vertical cavity surface emitting laser has relatively low cost and excellent performance, and has great potential in the fields of optical communication and structured light.
Generally, the greater the operating bandwidth of a laser, the higher its rate of signal transmission. Therefore, the operating bandwidth of the laser needs to be increased as much as possible. The current vertical cavity surface emitting laser has fast consumption of conduction band electrons in an active region, which leads to untimely carrier replenishment, thereby affecting the resonant frequency in a resonant cavity of the laser, and finally limiting the operation bandwidth of the vertical cavity surface emitting laser, which leads to low signal transmission rate.
Disclosure of Invention
The invention aims to provide a vertical cavity surface emitting laser and a preparation method thereof.
The embodiment of the invention is realized by the following steps:
in one aspect of the embodiments of the present invention, a vertical cavity surface emitting laser is provided, including: the liquid crystal display comprises a substrate, and a first distributed Bragg reflection layer, a first active layer, a tunneling layer, a second active layer and a second distributed Bragg reflection layer which are sequentially formed on the substrate, wherein a first electrode is formed on one side of the substrate, which is far away from the first distributed Bragg reflection layer, and a second electrode is formed on one side of the second distributed Bragg reflection layer, which is far away from the second active layer.
Optionally, the first active layer and the second active layer employ different energy gap materials.
Optionally, the first active layer and the second active layer are both multiple quantum well layers.
Optionally, a confinement layer is formed between the second distributed bragg reflector layer and the second active layer, and the confinement layer is formed with a light exit hole.
Optionally, a contact layer is formed between the second distributed bragg reflector layer and the second electrode.
Optionally, the second electrode is formed with a light exit hole.
Optionally, the first distributed bragg reflector layer is doped N-type, and the second distributed bragg reflector layer is doped P-type.
Optionally, the confinement layer is of an alumina material.
Optionally, the first distributed bragg reflector layer and the second distributed bragg reflector layer are both made of aluminum gallium arsenide (AlGaAs) and gallium arsenide (gaas).
In another aspect of the embodiments of the present invention, a method for manufacturing a vertical cavity surface emitting laser is provided, including:
forming a first distributed Bragg reflection layer, a first active layer, a tunneling layer, a second active layer and a second distributed Bragg reflection layer on a substrate in sequence;
and respectively forming a first electrode and a second electrode, wherein the first electrode is positioned on one side of the substrate, which is far away from the first distributed Bragg reflection layer, and the second electrode is positioned on one side of the second distributed Bragg reflection layer, which is far away from the second active layer.
The embodiment of the invention has the beneficial effects that:
the embodiment of the invention provides a vertical cavity surface emitting laser, which comprises a substrate, and a first distributed Bragg reflection layer, a first active layer, a tunneling layer, a second active layer and a second distributed Bragg reflection layer which are sequentially formed on the substrate. And a first electrode is formed on one side of the substrate, which is far away from the first distributed Bragg reflection layer, and a second electrode is formed on one side of the second distributed Bragg reflection layer, which is far away from the second active layer. Current can be loaded to two sides of the active layer through the first electrode and the second electrode, and therefore the active layer is excited to generate laser. In the vertical cavity surface emitting laser, a first active layer and a second active layer are arranged, wherein the second active layer is used as a main light emitting layer, and the first active layer is used as an auxiliary light emitting layer to assist the photon excitation of the second active layer; or the first active layer serves as a main light-emitting layer and the second active layer serves as an auxiliary light-emitting layer to assist photon excitation of the first active layer (as in the second embodiment). The auxiliary light emitting layer is arranged between the first active layer and the second active layer, and the auxiliary light emitting layer is arranged between the first active layer and the second active layer. Therefore, the vertical cavity surface emitting laser has a higher operation bandwidth and a faster signal transmission rate.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic structural diagram of a VCSEL according to an embodiment of the invention;
FIG. 2 is a second schematic structural diagram of a VCSEL according to an embodiment of the invention;
FIG. 3 is a third schematic structural diagram of a VCSEL provided in an embodiment of the invention;
fig. 4 is a schematic flow chart of a method for manufacturing a vertical cavity surface emitting laser according to an embodiment of the present invention.
Icon: 110-a substrate; 121-a first distributed bragg reflector layer; 122-a second distributed bragg reflector layer; 131-a first active layer; 132-a second active layer; 140-a tunneling layer; 151-first electrode; 152-a second electrode; 160-a confinement layer; 170-contact layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships that the products of the present invention are conventionally placed in use, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example one
An embodiment of the present invention provides a vertical cavity surface emitting laser, as shown in fig. 1, including: the light emitting diode comprises a substrate 110, and a first distributed bragg reflector layer 121, a first active layer 131, a tunneling layer 140, a second active layer 132 and a second distributed bragg reflector layer 122 which are sequentially formed on the substrate 110, wherein a first electrode 151 is formed on one side of the substrate 110, which is far away from the first distributed bragg reflector layer 121, and a second electrode 152 is formed on one side of the second distributed bragg reflector layer 122, which is far away from the second active layer 132.
The first dbr 121 and the second dbr 122 may adopt the same material level structure, and those skilled in the art can configure the first dbr according to the current commonly used level structure of the dbr (mirror), which is not limited herein. For example, a distributed bragg reflector structure composed of aluminum gallium arsenide (AlGaAs) and gallium arsenide, a distributed bragg reflector structure composed of gallium arsenide and aluminum arsenide, a distributed bragg reflector structure composed of silicon oxide and silicon nitride, a distributed bragg reflector structure composed of aluminum arsenide and aluminum gallium arsenide, or the like may be used as the first distributed bragg reflector 121 and the second distributed bragg reflector 122, respectively.
In the vcsel, the first active layer 131 and the second active layer 132 may be two quantum well layers or multiple quantum well layers made of different energy gap materials, or two quantum well layers or multiple quantum well layers made of the same material, which is not limited herein. As long as the first active layer 131 and the second active layer 132 are of a hierarchical structure capable of forming a structure in which photons can be excited to exit outward.
It should be noted that, in the vcsel, the first active layer 131 and the second active layer 132 are connected in series through the tunneling layer 140, so that the impedance between the first active layer 131 and the second active layer 132 can be reduced, and therefore, the active layer serving as the auxiliary light emitting layer can rapidly supplement the photon excitation of the carrier-assisted main light emitting layer to the main light emitting layer. For example, when the first active layer 131 is used as an auxiliary light emitting layer, and the first active layer 131 emits light due to current loading, and the emitted light is incident on the second active layer 132, the second active layer 132 can generate a light excitation phenomenon, so as to increase the number of high-energy-level carriers of the second active layer 132, thereby increasing the operation bandwidth of the vcsel.
For example, the tunneling layer 140 may be formed by alternately stacking gallium indium phosphorus ternary compounds and gallium arsenide materials, but in practical applications, the tunneling layer may also be formed by alternately stacking other two different gallium-based compound materials, which is not limited herein. The thickness of the tunneling layer 140 may be 10-20nm, for example, 10nm, 12nm, 14nm, 15nm, 16nm, 20nm, etc.
In practical applications, the tunneling layer 140 may be doped with P-type or N-type impurities at a certain concentration, and specifically, the doping concentration may be 1019cm-3And, of course, those skilled in the art can adjust and set the doping concentration according to the actual process design and conditions, and the like, which is not limited herein.
The vcsel according to an embodiment of the present invention includes a substrate 110, and a first distributed bragg reflector 121, a first active layer 131, a tunneling layer 140, a second active layer 132, and a second distributed bragg reflector 122 sequentially formed on the substrate 110. A first electrode 151 is formed on a side of the substrate 110 facing away from the first distributed bragg reflector layer 121, and a second electrode 152 is formed on a side of the second distributed bragg reflector layer 122 facing away from the second active layer 132. Current can be applied to both sides of the active layer through the first electrode 151 and the second electrode 152, thereby exciting the active layer to generate laser light. In the vertical cavity surface emitting laser, the second active layer 132 serves as a main light emitting layer, and the first active layer 131 serves as an auxiliary light emitting layer to assist photon excitation of the second active layer 132. That is, the carriers are supplemented in the resonant cavity formed by the first active layer 131 and the second active layer 132 through the auxiliary light emitting layer, so that the situation that the carriers in the resonant cavity are not supplemented in time is avoided, the resonant frequency in the resonant cavity is increased, and the operation bandwidth of the vertical cavity surface emitting laser is further increased. Therefore, the vertical cavity surface emitting laser has a higher operation bandwidth and a faster signal transmission rate.
Alternatively, the first active layer 131 and the second active layer 132 use different bandgap materials.
That is, the first active layer 131 uses a different bandgap material combination than the second active layer 132.
By providing different energy gap materials for the first active layer 131 and the second active layer 132, a better mutual coupling effect can be generated between the first active layer 131 and the second active layer 132, so as to obtain a better photon excitation effect and improve the performance of the vertical cavity surface emitting laser.
Alternatively, the first and second active layers 131 and 132 are both multiple quantum well layers.
It should be noted that the mqw layer structures respectively serving as the first active layer 131 and the second active layer 132 may be arranged according to a conventional mqw layer structure, and for example, the mqw layer may adopt a mqw layer structure composed of aluminum arsenide and gallium arsenide, or a mqw layer structure composed of indium gallium arsenide and aluminum gallium arsenide.
Of course, those skilled in the art may also modify and arrange the multiple quantum well layer according to other design requirements, and the present invention is not limited thereto, and the multiple quantum well layer may be a quantum well structure that can emit laser light by using quantum well effect laser photons.
Illustratively, the first active layer 131 is a multiple quantum well structure in which a GaInP layer and an AlInGaP layer are sequentially stacked; the second active layer 132 has a multiple quantum well structure in which InGaAs layers and AlGaAs layers are sequentially stacked, and the tunneling layer 140 has a structure in which GaInP layers and GaAs layers are sequentially stacked. Wherein, the thickness of the first active layer 131 ranges between 30nm and 200nm, and the thickness of the second active layer 132 ranges between 30nm and 200 nm; the energy gap of the first active layer 131 is larger than that of the second active layer 132. In the present embodiment, the first active layer 131 generates photons having a wavelength smaller than that of the second active layer 132.
Optionally, as shown in fig. 2, a confinement layer 160 is formed between the second distributed bragg reflector layer 122 and the second active layer 132, and the confinement layer 160 is formed with a light exit hole.
By forming the confinement layer 160 between the second distributed bragg reflector layer 122 and the second active layer 132, the confinement layer 160 concentrates the current in the vertical direction near the light exit hole to confine the light in the vertical direction near the light exit hole, and the beam spread angle of the laser light emitted from the vertical cavity surface emitting laser can be reduced.
Illustratively, the confinement layer 160 is an alumina material. Of course, the confinement layer 160 may be made of other materials without limitation.
Optionally, as shown in fig. 3, a contact layer 170 is formed between the second distributed bragg reflector layer 122 and the second electrode 152.
By forming the contact layer 170 between the second distributed bragg reflector layer 122 and the second electrode 152, the effect of ohmic contact of the second electrode 152 in the vertical cavity surface emitting laser can be improved, thereby improving the electrical performance of the laser.
Alternatively, as shown in fig. 1, the second electrode 152 is formed with a light emitting hole.
By providing the light exit hole in the second electrode 152, the laser light emitted from the resonant cavity formed by the first active layer 131 and the second active layer 132 can be emitted through the light exit hole without being blocked by the second electrode 152. Of course, in practical applications, the second electrode 152 may also be a transparent electrode, so that the laser light emitted from the resonant cavity can be emitted outwards through the second electrode 152, which is not limited herein.
When the vcsel includes the confinement layer 160, the light-emitting hole of the second electrode 152 is coaxial with the light-emitting hole of the confinement layer 160. So that the laser light can exit through the two light exit holes.
Optionally, the first distributed bragg reflector 121 is doped N-type, and the second distributed bragg reflector 122 is doped P-type.
In another aspect of the embodiments of the present invention, a method for manufacturing a vertical cavity surface emitting laser is provided, by which the vertical cavity surface emitting laser can be manufactured. The specific implementation and arrangement of the hierarchical structures of the first distributed bragg reflector layer 121, the first active layer 131, the tunneling layer 140, the second active layer 132, and the second distributed bragg reflector layer 122 involved in the method are the same as or similar to those of the aforementioned vcsel, and are not described herein again. Hereinafter, the method will be explained.
As shown in fig. 4, the method for manufacturing a vertical cavity surface emitting laser may include:
s201: a first distributed bragg reflector 121, a first active layer 131, a tunneling layer 140, a second active layer 132, and a second distributed bragg reflector 122 are sequentially formed on the substrate 110.
S202: the first electrode 151 and the second electrode 152 are formed, respectively.
The first electrode 151 is located on a side of the substrate 110 facing away from the first distributed bragg reflector layer 121, and the second electrode 152 is located on a side of the second distributed bragg reflector layer 122 facing away from the second active layer 132.
In this method, the first distributed bragg reflector 121, the first active layer 131, the tunneling layer 140, the second active layer 132, and the second distributed bragg reflector 122 formed on the substrate 110 may be implemented by an epitaxial process of a conventional vertical cavity surface emitting laser. Epitaxial growth processes such as Metal Oxide Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), and Chemical Vapor Deposition (CVD) enable growth epitaxy at various levels.
The first electrode 151 and the second electrode 152 may also be deposited by a preparation process. Also, when the second electrode 152 is provided with a light emitting hole, the light emitting hole may be formed using a dry etching or wet etching process. For example, the second electrode 152 is selectively etched by an Inductively Coupled Plasma (ICP) using a Plasma etcher to form the light emitting hole, and the Plasma may be configured as reactive Plasma (RIE), downstream Plasma (downstream), direct Plasma (direct Plasma), or the like.
Of course, in practical applications, the first electrode 151 and the second electrode 152 may also be formed by an electron beam evaporation process or a sputtering process, which is not limited herein.
By this method, the above-described vertical cavity surface emitting laser can be prepared, the second active layer 132 serves as a main light emitting layer, and the first active layer 131 serves as an auxiliary light emitting layer to assist photon excitation of the second active layer 132. That is, the carriers are supplemented in the resonant cavity formed by the first active layer 131 and the second active layer 132 through the auxiliary light emitting layer, so that the situation that the carriers in the resonant cavity are not supplemented in time is avoided, the resonant frequency in the resonant cavity is increased, and the operation bandwidth of the vertical cavity surface emitting laser is further increased. Therefore, the vertical cavity surface emitting laser prepared by the method has higher operation bandwidth and higher signal transmission rate.
It should be noted that, in practical applications, according to the aforementioned alternative embodiments of the vcsel, the method may further form the confinement layer 160, the contact layer 170, and other layered structures by using an epitaxial growth technique, which is not limited herein. The first distributed bragg reflector 121 and the second distributed bragg reflector 122 may be doped with corresponding impurities. And are not limited herein.
Example two
The difference from the vcsel of the first embodiment is that the second active layer 132 is a multiple quantum well structure formed by sequentially stacking a GaInP layer and an AlInGaP layer; the first active layer 131 is a multi-quantum well structure formed by sequentially stacking InGaAs layers and AlGaAs layers, and the tunneling layer 140 is a structure formed by sequentially stacking GaInP layers and GaAs layers, wherein the thickness of the second active layer 132 is between 30nm and 200nm, and the thickness of the first active layer 131 is between 30nm and 200 nm; the energy gap value of the second active layer 132 is greater than the energy gap value of the first active layer 131. In the present embodiment, the second active layer 132 generates photons having a wavelength smaller than that of the first active layer 131. In the vertical cavity surface emitting laser, the first active layer 131 functions as a main light emitting layer, and the second active layer 132 functions as an auxiliary light emitting layer to assist photon excitation of the first active layer 131.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A vertical cavity surface emitting laser, comprising: the light-emitting diode comprises a substrate, and a first distributed Bragg reflection layer, a first active layer, a tunneling layer, a second active layer and a second distributed Bragg reflection layer which are sequentially formed on the substrate, wherein a first electrode is formed on one side of the substrate, which is far away from the first distributed Bragg reflection layer, and a second electrode is formed on one side of the second distributed Bragg reflection layer, which is far away from the second active layer.
2. A vertical cavity surface emitting laser according to claim 1, wherein said first active layer and said second active layer employ different energy gap materials.
3. A vertical cavity surface emitting laser according to claim 1, wherein said first active layer and said second active layer are both multiple quantum well layers.
4. A vertical cavity surface emitting laser according to claim 1, wherein a confinement layer is formed between said second distributed bragg reflector layer and said second active layer, said confinement layer being formed with an exit aperture.
5. A vertical cavity surface emitting laser according to claim 1, wherein a contact layer is formed between said second distributed bragg reflector layer and said second electrode.
6. A vertical cavity surface emitting laser according to claim 1, wherein said second electrode is formed with a light exit hole.
7. A vertical cavity surface emitting laser according to claim 1, wherein said first distributed bragg reflector layer is N-type doped and said second distributed bragg reflector layer is P-type doped.
8. A vertical cavity surface emitting laser according to claim 4, wherein said confinement layer is made of an aluminum oxide material.
9. A vertical cavity surface emitting laser according to claim 1, wherein said first distributed bragg reflector layer and said second distributed bragg reflector layer are each formed using aluminum gallium arsenide and gallium arsenide.
10. A method for manufacturing a vertical cavity surface emitting laser includes:
forming a first distributed Bragg reflection layer, a first active layer, a tunneling layer, a second active layer and a second distributed Bragg reflection layer on a substrate in sequence;
and respectively forming a first electrode and a second electrode, wherein the first electrode is positioned on one side of the substrate, which is far away from the first distributed Bragg reflection layer, and the second electrode is positioned on one side of the second distributed Bragg reflection layer, which is far away from the second active layer.
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Cited By (3)

* Cited by examiner, † Cited by third party
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CN113131338A (en) * 2021-04-15 2021-07-16 厦门市三安集成电路有限公司 Flip-chip laser device and manufacturing method thereof
CN113285351A (en) * 2021-05-20 2021-08-20 常州纵慧芯光半导体科技有限公司 Vertical cavity surface emitting laser and manufacturing method and application thereof
CN113725730A (en) * 2021-09-02 2021-11-30 厦门市三安集成电路有限公司 Light spot improved vertical cavity surface emitting laser and manufacturing method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103078252A (en) * 2013-01-25 2013-05-01 中国科学院半导体研究所 Dual-wavelength antimonide strained quantum well semiconductor laser and preparation method thereof
CN103311805A (en) * 2012-03-13 2013-09-18 株式会社理光 Semiconductor stack and vertical cavity surface emitting laser
JP2014203894A (en) * 2013-04-02 2014-10-27 日本電信電話株式会社 Phase-locked long-wavelength band surface-emitting laser
CN109155502A (en) * 2016-04-04 2019-01-04 恩耐公司 High brightness is concerned with more junction diode lasers
CN111082316A (en) * 2020-01-17 2020-04-28 海南师范大学 Green light vertical cavity surface emitting semiconductor laser

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103311805A (en) * 2012-03-13 2013-09-18 株式会社理光 Semiconductor stack and vertical cavity surface emitting laser
CN103078252A (en) * 2013-01-25 2013-05-01 中国科学院半导体研究所 Dual-wavelength antimonide strained quantum well semiconductor laser and preparation method thereof
JP2014203894A (en) * 2013-04-02 2014-10-27 日本電信電話株式会社 Phase-locked long-wavelength band surface-emitting laser
CN109155502A (en) * 2016-04-04 2019-01-04 恩耐公司 High brightness is concerned with more junction diode lasers
CN111082316A (en) * 2020-01-17 2020-04-28 海南师范大学 Green light vertical cavity surface emitting semiconductor laser

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113131338A (en) * 2021-04-15 2021-07-16 厦门市三安集成电路有限公司 Flip-chip laser device and manufacturing method thereof
CN113285351A (en) * 2021-05-20 2021-08-20 常州纵慧芯光半导体科技有限公司 Vertical cavity surface emitting laser and manufacturing method and application thereof
CN113725730A (en) * 2021-09-02 2021-11-30 厦门市三安集成电路有限公司 Light spot improved vertical cavity surface emitting laser and manufacturing method thereof
CN113725730B (en) * 2021-09-02 2022-08-09 厦门市三安集成电路有限公司 Light spot improved vertical cavity surface emitting laser and manufacturing method thereof

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