CN112038217B - AlN单晶薄膜生长方法及具有该薄膜的声表面波谐振器 - Google Patents
AlN单晶薄膜生长方法及具有该薄膜的声表面波谐振器 Download PDFInfo
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- CN112038217B CN112038217B CN202010954072.5A CN202010954072A CN112038217B CN 112038217 B CN112038217 B CN 112038217B CN 202010954072 A CN202010954072 A CN 202010954072A CN 112038217 B CN112038217 B CN 112038217B
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- aln single
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- 239000013078 crystal Substances 0.000 title claims abstract description 216
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000010897 surface acoustic wave method Methods 0.000 title claims description 20
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims description 103
- 239000010408 film Substances 0.000 claims description 54
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 3
- 208000014451 palmoplantar keratoderma and congenital alopecia 2 Diseases 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 147
- 239000000758 substrate Substances 0.000 description 36
- 239000010410 layer Substances 0.000 description 22
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000000137 annealing Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003306 harvesting Methods 0.000 description 2
- 238000001657 homoepitaxy Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN202010954072.5A CN112038217B (zh) | 2020-09-11 | 2020-09-11 | AlN单晶薄膜生长方法及具有该薄膜的声表面波谐振器 |
PCT/CN2021/117917 WO2022053038A1 (zh) | 2020-09-11 | 2021-09-13 | AlN单晶薄膜生长方法及具有该薄膜的声表面波谐振器 |
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CN202010954072.5A CN112038217B (zh) | 2020-09-11 | 2020-09-11 | AlN单晶薄膜生长方法及具有该薄膜的声表面波谐振器 |
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CN112038217A CN112038217A (zh) | 2020-12-04 |
CN112038217B true CN112038217B (zh) | 2021-07-16 |
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CN112038217B (zh) * | 2020-09-11 | 2021-07-16 | 广东广纳芯科技有限公司 | AlN单晶薄膜生长方法及具有该薄膜的声表面波谐振器 |
CN112653421A (zh) * | 2020-12-18 | 2021-04-13 | 广东广纳芯科技有限公司 | 一种高声速高频高性能的窄带滤波器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101379226A (zh) * | 2006-02-06 | 2009-03-04 | 弗拉季米尔·西蒙诺维奇·阿布拉莫夫 | 基于氮化镓的生长半导体异质结构的方法 |
CN104101451A (zh) * | 2014-07-17 | 2014-10-15 | 电子科技大学 | 双敏感源声表面波传感器 |
CN105703732A (zh) * | 2016-01-18 | 2016-06-22 | 佛山市艾佛光通科技有限公司 | 一种基于单晶AlN的薄膜体声波谐振器制备方法 |
CN107634734A (zh) * | 2017-09-27 | 2018-01-26 | 中国科学院半导体研究所 | 声表面波谐振器、滤波器及其制备方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000201050A (ja) * | 1998-11-02 | 2000-07-18 | Ngk Insulators Ltd | 表面弾性波装置用基板およびその製造方法 |
CN102945898B (zh) * | 2012-11-23 | 2015-09-30 | 广州市众拓光电科技有限公司 | 生长在金属Ag衬底上的AlN薄膜及其制备方法、应用 |
CN112038217B (zh) * | 2020-09-11 | 2021-07-16 | 广东广纳芯科技有限公司 | AlN单晶薄膜生长方法及具有该薄膜的声表面波谐振器 |
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- 2020-09-11 CN CN202010954072.5A patent/CN112038217B/zh active Active
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- 2021-09-13 WO PCT/CN2021/117917 patent/WO2022053038A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101379226A (zh) * | 2006-02-06 | 2009-03-04 | 弗拉季米尔·西蒙诺维奇·阿布拉莫夫 | 基于氮化镓的生长半导体异质结构的方法 |
CN104101451A (zh) * | 2014-07-17 | 2014-10-15 | 电子科技大学 | 双敏感源声表面波传感器 |
CN105703732A (zh) * | 2016-01-18 | 2016-06-22 | 佛山市艾佛光通科技有限公司 | 一种基于单晶AlN的薄膜体声波谐振器制备方法 |
CN107634734A (zh) * | 2017-09-27 | 2018-01-26 | 中国科学院半导体研究所 | 声表面波谐振器、滤波器及其制备方法 |
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Denomination of invention: Growth method of AlN single crystal thin film and surface acoustic wave resonator with the thin film Effective date of registration: 20230526 Granted publication date: 20210716 Pledgee: CITIC Bank Co.,Ltd. Guangzhou Branch Pledgor: Guangdong guangnaixin Technology Co.,Ltd. Registration number: Y2023980042035 |
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