CN112036212A

CN112036212A - Electronic device

Info

Publication number: CN112036212A
Application number: CN201910478341.2A
Authority: CN
Inventors: 朱逸洁; 姚怡安; 简传枝; 陈明煌; 李淑芬; 廖小凤
Original assignee: Innolux Corp
Current assignee: Innolux Corp
Priority date: 2019-06-03
Filing date: 2019-06-03
Publication date: 2020-12-04

Abstract

The invention provides an electronic device which comprises a first substrate, an optical sensor, a second substrate, a first light blocking layer and a second light blocking layer. The optical sensor is disposed on the first substrate. The second substrate includes a first side facing the optical sensor and a second side opposite to the first side. A first light blocking layer is disposed on the first side and includes a first opening. A second light blocking layer is disposed on the second side and includes a second opening. The first opening and the second opening overlap with the optical sensor.

Description

Electronic device

Technical Field

The present invention relates to an electronic device, and more particularly, to an electronic device for receiving fingerprint data using an optical sensor.

Background

Generally, fingerprint identification is applicable to identity identification, and therefore, with the technological development of electronic devices, the function of fingerprint identification is also integrated into various electronic devices for wide use, for example, a display such as a smart phone, a user can directly manage the electronic device through fingerprint identification without remembering a password, and the fingerprint identification provides good convenience or security because the identification process of the fingerprint is fast and is not easy to counterfeit.

In order to allow the fingerprint sensor to receive the reflected light of the fingerprint of the corresponding area and sense the fingerprint profile of the area, in the conventional electronic device with the externally-mounted fingerprint sensor, a collimator (collimator) is disposed on the externally-mounted fingerprint sensor to limit or screen the light received by the fingerprint sensor and reduce the interference of stray light. However, when the fingerprint sensor is embedded in an electronic device such as a display, the conventional collimator cannot be disposed, so the fingerprint sensor is easily interfered by stray light, resulting in poor fingerprint identification effect.

Disclosure of Invention

In one embodiment, the present invention provides an electronic device including a first substrate, an optical sensor, a second substrate, a first light blocking layer, and a second light blocking layer. The optical sensor is disposed on the first substrate. The second substrate includes a first side facing the optical sensor and a second side opposite to the first side. A first light blocking layer is disposed on the first side and includes a first opening. A second light blocking layer is disposed on the second side and includes a second opening. The first opening and the second opening overlap with the optical sensor.

In one embodiment, the present invention further provides an electronic device including a first substrate, an optical sensor, a second substrate, and an optical film. The optical sensor is disposed on the first substrate. The second substrate includes a first side facing the optical sensor and a second side opposite to the first side. The optical film layer is disposed on the second side of the second substrate and includes a protruding structure, wherein the protruding structure overlaps the optical sensor.

Drawings

Fig. 1 is a schematic configuration diagram of components of an electronic device according to a first embodiment of the invention.

FIG. 2 is a schematic top view of a light blocking layer and a color conversion layer of the electronic device shown in FIG. 1.

Fig. 3 is a detailed top view of a portion of the components of the electronic device shown in fig. 1.

FIG. 4 is a schematic cross-sectional view of the structure along the section line A-A' of FIG. 3.

Fig. 5 is a schematic view of a component configuration of an electronic device according to a second embodiment of the invention.

Fig. 6 is a detailed top view of a part of the components of an electronic device according to a third embodiment of the invention.

FIG. 7 is a schematic cross-sectional view of the structure taken along the line B-B' of FIG. 6.

Fig. 8 is a schematic view of a component configuration of an electronic device according to a fourth embodiment of the invention.

Fig. 9 is a schematic view of a component configuration of an electronic device according to a fifth embodiment of the invention.

Description of reference numerals: 31-a first active layer; 32-a second active layer; 61-an array substrate structure; 62-an opposite substrate structure; 100. 200, 300, 400, 500-electronic device; 110-a first substrate; 120-a circuit structure layer; 122 — a first conductive layer; 124-a second conductive layer; 126-a third conductive layer; 128-a fourth conductive layer; 129-transparent conductive layer; 130-a display medium layer; 140-a second substrate; 140 a-first side; 140 b-second side; 210-a third substrate; 210 a-a third side; 210 b-fourth side; IN 1-IN 8- -insulating layers; 410-an optical film layer; 410 a-a protrusion structure; AH1, AH2 — adhesive layer; BE-a first electrode; a BF-buffer layer; BL-backlight layer; CF-color photoresist layer; CF1 — first color part; CF2 — second color section; CF3 — third color section; COV-cover plate; d1-first direction; d2-second direction; d3-third direction; db. Df-distance; a DE-drain; DOP-shows openings; DT-sensing switching elements; DU-display structure; FG-finger; an FS-optical sensor; a GE-gate; l _1, L _2, R _ 1-R _ 6-rays; LB-bottom light-shielding layer; LS1 — first light blocking layer; LS1a — first outer surface; LS2 — second light blocking layer; LS2a — second outer surface; LS3 — third light blocking layer; LS3a — third outer surface; OP1 — first opening; OP2 — second opening; OP 3-third opening; PE-pixel electrode; PL-protective layer; PS1 — first semiconductor layer; PS2 — second semiconductor layer; PS 3-third semiconductor layer; sa, Sb-size; an SE-source; SI-input connection structure; SL 1-scan line; SL 2-data line; SL 3-third conductor; SL 4-fourth conductor; an SO-output connection structure; ST-display switching elements; an SU-sensing unit; SPX 1-first subpixel; SPX 2-second subpixel; SPX 3-third subpixel; TE-a second electrode; theta-angle.

Detailed Description

The present invention may be understood by reference to the following detailed description taken in conjunction with the accompanying drawings, in which it is noted that, for the sake of clarity, the various drawings depict only some embodiments of the invention and are not necessarily drawn to scale. In addition, the number and size of the elements in the drawings are merely illustrative and are not intended to limit the scope of the present invention.

Certain terms are used throughout the description and following claims to refer to particular elements. Those skilled in the art will appreciate that electronic device manufacturers may refer to the same components by different names. This document does not intend to distinguish between components that differ in function but not name. In the following description and claims, the terms "including", "comprising", "having", "with", and the like are open-ended terms, and thus should be construed to mean "including, but not limited to …". Thus, when the terms "comprises", "comprising", "includes" and/or "including" are used in the description of the invention, they specify the presence of stated features, regions, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, regions, steps, operations, and/or components.

When a corresponding element, such as a film or region, is referred to as being "on" another element (or variations thereof), it can be directly on the other element or intervening elements may also be present. On the other hand, when an element is referred to as being "directly on" another element (or variations thereof), there are no elements present therebetween.

It will be understood that when an element or layer is referred to as being "connected to" another element or layer, it can be directly connected to the other element or layer or intervening elements or layers may be present. When an element is referred to as being "directly connected to" another element or layer, there are no intervening elements or layers present. In addition, when a component is referred to as being "coupled" to another component (or a variation thereof), it may be directly connected to the other component or indirectly connected (e.g., electrically connected) to the other component through one or more members.

The terms "about," "substantially," or "substantially" are generally to be construed as being within 20% of a given value or range, or as being within 10%, 5%, 3%, 2%, 1%, or 0.5% of the given value or range.

Although terms such as "first," "second," "third," etc. may be used to describe or designate various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element in the specification, regardless of the order in which the elements are manufactured. In the claims, the terms "first," "second," "third," etc. may be used instead of, or in addition to, the terms in the claims, depending on the order in which the elements in the claims are recited. Accordingly, in the following description, a first member may be a second member in the claims.

It is to be understood that the following illustrative embodiments may be implemented by replacing, recombining, and mixing features of several different embodiments without departing from the spirit of the present invention.

In the present invention, the electronic device may be any suitable type of electronic device, such as a display, a touch display, an antenna, etc., but not limited thereto. The display of the present invention may be a liquid crystal display, an organic light emitting diode display, a quantum dot material display, or other suitable display. Hereinafter, the electronic device will be described by taking a liquid crystal display as an example. Further, the displays below may be color displays or monochrome displays, while the shape of the displays may be rectangular, circular, polygonal, shaped with curved edges, or other suitable shapes.

Referring to fig. 1 and 2, fig. 2 is a top view, and fig. 1 is a cross-sectional view taken along a section line C-C' in fig. 2. The electronic device 100 of the embodiment includes a plurality of sub-pixels, for example, a first sub-pixel SPX1, a second sub-pixel SPX2, and a third sub-pixel SPX3 capable of generating different color lights, which are arranged side by side. The first sub-pixel SPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3 are, for example, a red sub-pixel, a green sub-pixel, and a blue sub-pixel, respectively, so as to generate a color image, but not limited thereto. According to some embodiments, the electronic device 100 comprises: a first substrate 110, an optical sensor FS, and a second substrate 140. The optical sensor FS is disposed on the first substrate 110. The second substrate 140 includes a first side 140a facing the optical sensor FS and a second side 140b opposite to the first side 140 a. On both sides of the second substrate 140, light blocking layers are disposed. Specifically, a first light blocking layer LS1 is disposed on the first side 140a and includes a first opening OP 1. A second light blocking layer LS2 is disposed on the second side 140b and includes a second opening OP 2. The first and second openings OP1 and OP2 overlap the optical sensor FS. In the present invention, the term "overlap" may be expressed as complete overlap or partial overlap. The first substrate 110 and the second substrate 140 are disposed opposite to each other, and the materials of the first substrate 110 and the second substrate 140 may respectively include glass, quartz, sapphire, polymer, or other suitable materials, wherein the suitable polymer may be Polyimide (PI), polyethylene terephthalate (PET), but not limited thereto. The first substrate 110 and the second substrate 140 may be flexible substrates or hard substrates, but not limited thereto. The materials of the first substrate 110 and the second substrate 140 may be the same as or different from each other, and the first substrate 110 and the second substrate 140 may have a single-layer structure or a multi-layer structure.

According to some embodiments, the electronic device 100 includes an array substrate structure 61 and an opposing substrate structure 62. Specifically, the array substrate structure 61 may include a first substrate 110 and a circuit structure layer 120 disposed on the first substrate 110. The opposite substrate structure 62 may include a second substrate 140, and a first light blocking layer LS1 and a second light blocking layer LS2 disposed on both sides of the second substrate 140.

According to some embodiments, the electronic device 100 may include a display apparatus, an antenna device, a sensing device, or a splicing device, but is not limited thereto. The electronic device can be a bendable or flexible electronic device. The electronic device may include, for example, a liquid crystal (liquid crystal) or a Light Emitting Diode (LED), and the light emitting diode may include, for example, an Organic Light Emitting Diode (OLED), a sub-millimeter light emitting diode (mini LED), a micro light emitting diode (micro LED) or a quantum dot light emitting diode (quantum dot, which may be, for example, QLED, QDLED), a fluorescent light (fluorescent light), a phosphorescent light (phosphor), or other suitable materials, and the foregoing may be arranged and combined arbitrarily, but not limited thereto. The antenna device may be, for example, a liquid crystal antenna, but is not limited thereto. The splicing device may be, for example, a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device can be any combination of the above arrangements, but not limited thereto. The present invention will be described below with reference to the display device as an electronic device or a splicing device, but the present invention is not limited thereto. When the electronic device 100 is a liquid crystal display, a display medium layer 130 may be disposed between the array substrate structure 61 and the opposite substrate structure 62, and the display medium layer 130 may be a liquid crystal layer. The electronic device 100 may further include a backlight layer BL and a color resist layer CF. The backlight layer BL may be disposed on a side of the first substrate 110 opposite to the second substrate 140, such that the backlight emitted by the backlight layer BL may sequentially pass through the first substrate 110 and the second substrate 140. According to some embodiments, the color filter layer CF may be disposed in the opposing substrate structure 62, for example, the color filter layer CF may be disposed on the first side 140a of the second substrate 140, for example, may be disposed over the first light blocking layer LS1, closer to the first substrate 110 than the first light blocking layer LS 1. The color photoresist layer CF includes a first color section CF1, a second color section CF2 and a third color section CF3 respectively disposed in the first sub-pixel SPX1, the second sub-pixel SPX2 and the third sub-pixel SPX3, wherein the first color section CF1, the second color section CF2 and the third color section CF3 can convert the backlight into green light, red light and blue light respectively according to the colors generated by the first sub-pixel SPX1, the second sub-pixel SPX2 and the third sub-pixel SPX 3. According to other embodiments, a color resist layer CF (not shown) may be disposed in the array substrate structure 61 to form a color filter on array (COA) structure.

According to some embodiments, the first and second light blocking layers LS1 and LS2 may include, for example, black ink, black metal, black resin, and/or other suitable light blocking materials, and the materials of the first and second light blocking layers LS1 and LS2 may be the same as or different from each other. Referring to fig. 2, the first light blocking layer LS1 and/or the second light blocking layer LS2 may include a display opening DOP. The display opening DOP defines a display area or an opening area (aperture area) to expose the color filter CF, so that the light in the sub-pixel can pass through the display opening DOP to generate the picture. The area outside the display opening is a light shielding area. In addition, referring to fig. 1, the electronic device 100 may include a cover plate COV disposed on the opposite substrate structure 62. The cover plate COV may be attached to the opposing substrate structure 62 by an adhesive layer AH 1. Other layers (not shown), such as a polarizing layer, may be optionally disposed between the adhesive layer AH1 and the second light blocking layer LS 2.

Fig. 3 is a detailed top view of a portion of the components of the electronic device shown in fig. 1, and fig. 4 is a cross-sectional view taken along a section line a-a' of fig. 3. For simplicity, fig. 3 only shows the first sub-pixel SPX1 and the second sub-pixel SPX2 in a top view, and omits the color filter layer CF, the first light blocking layer LS1, and the second light blocking layer LS 2. Referring to fig. 4, the circuit structure layer 120 is disposed on the first substrate 110. The circuit structure layer 120 may include a sensing unit SU and a display unit DU. The sensing unit SU may include the aforementioned optical sensor FS and a sensing switching element DT. The circuit structure layer 120 may include a first conductive layer 122, a second conductive layer 124, a third conductive layer 126 and a fourth conductive layer 128, which are disposed on the first substrate 110 and sequentially disposed toward the second substrate 140. The circuit structure layer 120 may include multiple insulating layers to electrically insulate at least a portion of the first conductive layer 122, at least a portion of the second conductive layer 124, at least a portion of the third conductive layer 126, and at least a portion of the fourth conductive layer 128. As shown IN fig. 4, the multi-layered insulating layer includes, for example, insulating layers IN1, IN2, IN3-1, IN4, IN5, IN6, IN7, and IN8, but is not limited thereto. The number of insulating layers may vary depending on the actual requirements.

As shown in fig. 3, the display unit DU may include a display switch device ST, a pixel electrode PE, a scan line (first conductive line) SL1 and a data line (second conductive line) SL 2. For simplicity of illustration, the display unit DU is omitted from fig. 4. Fig. 4 shows only the detailed sectional configurations of the optical sensor FS and the sensing switching element DT, but omits to show the switching element ST. Referring to fig. 3, the switching device ST may be a thin film transistor (tft), which may include a gate electrode, a first active layer 31, a source electrode and a drain electrode. The first conductive layer 122 may include a scan line SL1, and the scan line SL1 may serve as a scan line of the display switching element ST. The second conductive layer 124 may include a data line SL2, and the data line SL2 may serve as a data line of the display switching element ST. The scan line SL1 may include a gate of the display switch device ST, the data line SL2 may include a source of the display switch device ST, and the pixel electrode PE may be electrically connected to a drain of the display switch device ST, but not limited thereto. The first active layer 31 may have any suitable shape, and in fig. 3, the first active layer 31 is U-shaped, but not limited thereto. The top view shape of the pixel electrode PE may correspond to the top view shape of the sub-pixel, and each corresponds to the display opening DOP. Alternatively, the pixel electrode PE may have one or more slits, but not limited thereto. In fig. 3, the scan lines SL1 may extend along a first direction D1, the data lines SL2 may extend along a second direction D2, and the first direction D1 and the second direction D2 are not parallel to each other (e.g., may be perpendicular to each other). It should be noted that, when the scan line SL1 and the data line SL2 are not straight, the scan line SL1 and the data line SL2 may still extend in a substantial extending direction. The third direction D3 is a direction from the first substrate 110 to the second substrate 140, and may be perpendicular to the first direction D1 and the second direction D2.

As shown in fig. 4, the sensing unit SU may include the aforementioned optical sensor FS and the sensing switching element DT. The sensing switching element DT may be electrically connected to the optical sensor FS. The sensing switching element DT may be a thin film transistor, and may include a gate electrode GE, a second active layer 32, a source electrode SE, and a drain electrode DE.

The materials of the conductive layers in the circuit structure layer 120 (e.g., the first conductive layer 122, the second conductive layer 124, the third conductive layer 126, and the fourth conductive layer 128) may include metal, transparent conductive material (e.g., Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), etc.), other suitable conductive materials, or a combination thereof. Examples of the insulating layer in the circuit structure layer 120 may include silicon oxide, silicon nitride, silicon oxynitride, other suitable insulating materials, or a combination thereof, and the first active layer 31 and the second active layer 32 in the circuit structure layer 120 may include, for example, polysilicon (polycrystalline silicon), amorphous silicon (amorphous silicon), metal oxide semiconductor (mos), other suitable semiconductor materials, or a combination thereof.

According to some embodiments, in fig. 3 and 4, a gate electrode (not shown) of the switching element ST, the scan line SL1 and a gate electrode GE of the sensing switching element DT may be formed by the first conductive layer 122. That is, the gate electrode (not shown) of the display switching element ST, the scan line SL1 and the gate electrode GE of the sensing switching element DT may be formed of the same conductive layer 122. The source and drain electrodes (not shown) of the display switching element ST, the data line SL2, and the source SE and drain DE of the sensing switching element DT may be formed of the second conductive layer 124. That is, the source and drain (not shown) of the display switching element ST, the data line SL2, and the source SE and drain DE of the sensing switching element DT may be formed of the same conductive layer 124. The first conductive layer 122 and the second conductive layer 124 may be metal. The first active layer 31 of the display switch device ST and the second active layer 32 of the sensing switch device DT may be formed by the same active layer (or semiconductor layer). That is, the sensing switch element DT and the display switch element ST can be manufactured by the same process, but not limited thereto. In some embodiments, the sensing switch element DT and the display switch element ST may be different in type or film sequence.

As shown in fig. 3, the sensing units SU are respectively located in one sub-pixel. That is, the first sub-pixel SPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3 each have one sensing unit SU, but not limited thereto. According to other embodiments, it is not necessary to have one sensing unit SU per sub-pixel. For example, although not shown, according to other embodiments, each three sub-pixels may have one sensing unit SU. That is, of the consecutive three sub-pixels, only one sub-pixel has one sensing unit SU, and the other two sub-pixels do not have sensing units SU. Or, for example, there may be one sensing unit SU every six subpixels. According to other embodiments, the density of the sensing units SU may be lower than that of the sub-pixels.

Referring to fig. 1, the optical sensor FS may be configured to receive the reflected light reflected by the finger FG and generate sensing signals (e.g., voltages or currents) with different magnitudes according to the intensity of the reflected light. Since the light intensity of the reflected light reflected by the finger FG varies according to the fingerprint profile of the finger FG, the fingerprint profile can be determined by the magnitude of the sensing signal generated by the optical sensor FS. For example, the intensity of light reflected by ridges may be greater than the intensity of light reflected by valleys. The optical sensor FS may include a thin film transistor, a PN type diode, a PIN type diode, a schottky diode, or other suitable photoelectric conversion element. In fig. 4, the optical sensor FS includes a PIN diode, which includes a first semiconductor layer PS1, a second semiconductor layer PS2 and a third semiconductor layer PS3, for example, the first semiconductor layer PS1 can be a P-type semiconductor layer, the second semiconductor layer PS2 can be an intrinsic layer, and the third semiconductor layer PS3 can be an N-type semiconductor layer. The second semiconductor layer PS2 is located between the first semiconductor layer PS1 and the third semiconductor layer PS 3. The semiconductor layers PS1, PS2, and PS3 may include amorphous silicon, polysilicon, metal oxide semiconductor, other suitable semiconductor materials, or a combination thereof, but are not limited thereto. In addition, a first electrode BE and a second electrode TE may BE disposed on the lower and upper sides of the PIN diode, respectively, wherein the first electrode BE may BE formed by the third conductive layer 126, for example. For example, the third conductive layer 126 may be a metal. The second electrode TE may be formed of a transparent conductive material (e.g., Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), etc.), but not limited thereto. The sensing switch element DT is electrically connected to the optical sensor FS for controlling the transmission of the sensing signal. In the present embodiment, the sensing switch element DT may BE, for example, a thin film transistor, and the source electrode SE of the sensing switch element DT may BE electrically connected to the first electrode BE of the optical sensor FS, but not limited thereto.

Referring to fig. 3 and 4, in addition, according to some embodiments, the third conductive layer 126 may include a third conductive line SL3, and the fourth conductive layer 128 may include a fourth conductive line SL 4. The third wire SL3 may be used to electrically connect the second electrode TE of the optical sensor FS to transmit a voltage to the optical sensor FS. The fourth conductive line SL4 may be used to electrically connect the drain DE of the sensing switch element DT, so that the sensing signal generated by the optical sensor FS can be transmitted to, for example, a data processing unit or a data recognition unit through the sensing switch element DT and the fourth conductive line SL4 to obtain the fingerprint profile. According to some embodiments, the second electrode TE of the optical sensor FS is electrically connected to by an input connection structure SI (e.g. comprising the topmost transparent conductive layer 129). The fourth conductive line SL4 may serve as an output line and is electrically connected to the sensing switch element DT through the output connection structure SO, but not limited thereto. According to some embodiments, the circuit structure layer 120 may further include a fifth conductive layer (not shown) disposed on the fourth conductive layer 128, and at least a portion of the fifth conductive layer is electrically insulated from the fourth conductive layer 128, and the fifth conductive layer may be electrically connected to the second electrode TE of the optical sensor FS and may serve as a signal input line. In addition, in fig. 3, the data line SL2, the third conductive line SL3 and the fourth conductive line SL4 may overlap each other and extend along the second direction D2, wherein the line widths of the third conductive line SL3 and the fourth conductive line SL4 are substantially the same (indicated by SL3(126)/SL4(128) in fig. 3), the line width of the data line SL2 is greater than the line width of the third conductive line SL3, but not limited thereto, the configuration of the conductive lines may be designed according to the requirement. In addition, the circuit structure layer 120 may further optionally include a buffer layer BF and a bottom light shielding layer LB disposed between the second active layer 32 and the first substrate 110.

In the present invention, the first light blocking layer LS1 includes a first opening OP1, the second light blocking layer LS2 includes a second opening OP2, and the first opening OP1, the second opening OP2 and the optical sensor FS of the sensing unit SU correspond to each other in the third direction D3. In other words, the first opening OP1, the second opening OP2 and the optical sensor FS of the sensing unit SU overlap in the third direction D3. In the present embodiment, the size of the first opening OP1 may be substantially the same as that of the second opening OP2, but not limited thereto. It should be noted that the size of the opening described herein may be a diameter, a length, a width, or a dimension in a direction perpendicular to the third direction D3. In some embodiments, the sizes of the first opening OP1 and the second opening OP2 may be different, for example, the size of the first opening OP1 may be larger or smaller than the size of the second opening OP 2. It should be noted that although the size of the first opening OP1 and the size of the second opening OP2 can be designed to be the same, there is still a possibility that the actual measurement may be different due to process error, for example, the sizes of the first opening OP1 and the second opening OP2 may be within 20%, 10%, 5%, 3%, 2%, 1% or 0.5%.

As shown in fig. 2, when performing fingerprint sensing, the sub-pixels adjacent to the sensing units SU may be turned on, so that the backlight generated by the backlight layer BL is emitted from the turned-on sub-pixels. Then, as shown in fig. 1, when the light irradiates the finger FG, the reflected light sequentially passes through the second opening OP2 and the first opening OP1 and irradiates the optical sensor FS of the sensing unit SU. Therefore, with this design, the first light blocking layer LS1 and the second light blocking layer LS2 can block stray light from being irradiated to the optical sensor FS, and make the reflected light (e.g., light L _1, light L _2) of the fingerprint feature point corresponding to the optical sensor FS irradiate to the optical sensor FS, so as to improve the accuracy of the sensing unit SU detecting the fingerprint profile. According to some embodiments, for an optical sensor FS, if the reflected light is not reflected by the fingerprint feature point corresponding to the optical sensor FS, the type of reflected light is stray light for the optical sensor FS. In addition, the external ambient light may also be regarded as stray light for the optical sensor FS. For example, in fig. 1, the light rays R _1 and R _2 can be reflected light of the feature points corresponding to the adjacent optical sensors FS, and thus are stray light for the middle optical sensor FS, and the light rays R _1 and R _2 are blocked by the second light blocking layer LS2 and do not reach the middle optical sensor FS. For another example, in fig. 1, the light rays R _3 and R _4 may be reflected light of the feature point corresponding to the farther optical sensor FS or external ambient light, so that the light rays R _3 and R _4 are still stray light for the middle optical sensor FS, and the light rays R _3 and R _4 are blocked by the first light blocking layer LS1 and do not reach the middle optical sensor FS.

On the other hand, the first opening OP1 of the first light blocking layer LS1 and the second opening OP2 of the second light blocking layer LS2 may screen out reflected light having a specific angle range. In fig. 1, for one optical sensor FS, when the reflected light of the corresponding feature point has an angle within the angle θ with respect to the third direction D3, the reflected light can be irradiated to the optical sensor FS through the second opening OP2 and the first opening OP1, thereby reducing the influence of stray light on the optical sensor FS. The angle θ can be any suitable value, and can be designed according to actual requirements. For example, the angle θ of the present embodiment may be 60 degrees, but not limited thereto. As can be seen from the above, in the present embodiment, the combination of the first opening OP1 of the first light-blocking layer LS1 and the second opening OP2 of the second light-blocking layer LS2 functions as a collimator (collimator) of the optical sensor FS embedded in the sensing unit SU of the electronic device 100, that is, the collimator is integrated in the opposite substrate structure 62.

To achieve the function of screening the angle of reflected light and/or blocking stray light, for example, the following functions are provided according to Sa: sb ═ b/2: (Df + Db/2) is designed (as shown in FIG. 1) to improve the accuracy and sensitivity of the sensing unit SU detecting the fingerprint profile. In the present embodiment, the size Sa is a size of the first opening OP1 of the first light blocking layer LS1, the distance Db is a distance between the first outer surface LS1a of the first light blocking layer LS1 and the second outer surface LS2a of the second light blocking layer LS2, and the distance Df is a distance between an outer surface of the electronic device 100 (i.e., the outer surface of the cover plate COV) and the second outer surface LS2a of the second light blocking layer LS 2. In some embodiments, the design may be based on other optical relationships. According to some embodiments, distance Db may be greater than or equal to 20 micrometers (μm) and less than or equal to 150 micrometers, distance Df may be greater than or equal to 600 micrometers and less than or equal to 1000 micrometers, size Sa may be greater than or equal to 1 micrometer and less than or equal to 10 micrometers, the ratio of distance Db to size Sa may be greater than or equal to 2 and less than or equal to 15, and/or size Sb may be less than or equal to 400 micrometers, but is not limited thereto. The above embodiments take the case where light passes over the sides of the first and second light blocking layers LS1 and LS2 as an example of calculation.

However, in other embodiments, when the side edges of the first light blocking layer LS1 and the second light blocking layer LS2 are gentle slopes, the measurement of the dimension Sa of the first opening may be selectively based on the bottom of the substrate, for example, as shown in fig. 1, the width of the first opening OP1 in the cross section is measured near the width of the second substrate 140 (the width above the first opening OP1 in fig. 1), and the dimension Sa and the dimension Sb are connected together and pass through the bottom of the second blocking layer LS2 (the width below the second opening OP2 in fig. 1), that is, the connection between the left and right sides of the optical sensor FS of the sensing unit SU and the first opening OP1 is connected together and passes through the left and right sides of the first opening OP1 and approaches the bottom of the substrate and the left and right sides of the second opening OP1 and approaches the bottom of the substrate.

In addition, the electronic device 100 may additionally include other required layers and structures. In some embodiments, the electronic device 100 may further optionally include a protective layer PL disposed between the color resist layer CF and the display medium layer 130. In some embodiments, the electronic device 100 may further include an alignment layer disposed on the upper side and/or the lower side of the display medium layer 130. In some embodiments, the electronic device 100 may include at least one optical film layer, for example, the electronic device 100 may include two polarizers, one of which may be disposed between the backlight layer BL and the first substrate 110, the other of which may be disposed between the second light blocking layer LS2 and the cover plate COV, and the polarizers may be attached by adhesive materials, but not limited thereto.

The electronic device of the present invention is not limited to the above-mentioned embodiments, and other embodiments will be further disclosed, but for simplifying the description and making the difference between the above-mentioned embodiments more obvious, the same components will be labeled with the same reference numerals hereinafter, and repeated descriptions will not be repeated.

Referring to fig. 5, fig. 5 is a schematic view of a component configuration of an electronic device according to a second embodiment of the invention. As shown in fig. 5, the difference between the present embodiment and the first embodiment is that the electronic device 200 of the present embodiment includes three light blocking layers. In detail, the electronic device 200 of the present embodiment further includes a third substrate 210, wherein the material of the third substrate 210 may include glass, quartz, sapphire, polymer (such as Polyimide (PI), polyethylene terephthalate (PET)), and/or other suitable materials, which are used as the flexible film layer or the hard film layer. The materials of the first substrate 110, the second substrate 140, and the third substrate 210 may be the same or different from each other, and the thicknesses of the first substrate 110, the second substrate 140, and the third substrate 210 may also be the same or different from each other. For example, the first substrate 110 and the second substrate 140 may include glass, and the third substrate 210 may include a polymer layer, but not limited thereto. In the present embodiment, the third substrate 210 may be attached between the second substrate 140 and the cover plate COV by an adhesive layer AH2, wherein the third substrate 210 includes a third side 210a facing the second substrate 140 and a fourth side 210b opposite to the third side 210 a. The electronic device 200 further includes a third light blocking layer LS3, and the material of the third light blocking layer LS3 may include, for example, black ink, black metal, black resin, and/or other suitable light blocking materials. The materials of the first, second, and third light blocking layers LS1, LS2, and LS3 may be the same as or different from each other. In the present embodiment, the third light blocking layer LS3 is disposed on the fourth side 210b such that the second light blocking layer LS2 is located between the first light blocking layer LS1 and the third light blocking layer LS3, but the manner of disposing is not limited thereto. In some embodiments, the second light blocking layer LS2 may be disposed on the third side 210a of the third substrate 210. Similarly, the third light blocking layer LS3 includes a third opening OP3, and the third opening OP3 corresponds to the first opening OP1, the second opening OP2, and the optical sensor FS of the sensing unit SU in the third direction D3. In other words, the third opening OP3 overlaps the first opening OP1, the second opening OP2 and the optical sensor FS of the sensing unit SU in the third direction D3. In the present embodiment, the size of the third opening OP3 may be substantially the same as that of the first opening OP1, but not limited thereto. In some embodiments, the size of the third opening OP3 may be larger or smaller than the size of the first opening OP 1. In addition, in some embodiments, the opening of the light blocking layer positioned in the middle may be less than or equal to the openings of the upper and lower light blocking layers, that is, the size of the second opening OP2 of fig. 5 may be less than or equal to the size of the first opening OP1 and the size of the third opening OP 3. Further, the distance between the second light blocking layer LS2 and the first light blocking layer LS1 in the third direction D3 and the distance between the third light blocking layer LS3 in the third direction D3 may be designed according to actual requirements, and in fig. 5, the distance between the second light blocking layer LS2 and the first light blocking layer LS1 in the third direction D3 may be the same as the distance between the second light blocking layer LS2 and the third light blocking layer LS3 in the third direction D3, but not limited thereto.

When sensing a fingerprint, the reflected light of the finger FG is sequentially emitted to the optical sensor FS of the sensing unit SU through the third opening OP3, the second opening OP2 and the first opening OP 1. Therefore, with this design, the first light blocking layer LS1, the second light blocking layer LS2, and the third light blocking layer LS3 can block stray light from impinging on the optical sensor FS and/or screen reflected light angles to improve the accuracy of the sensing unit SU in detecting fingerprint contours. In other words, in the present embodiment, a combination of the first opening OP1 of the first light blocking layer LS1, the second opening OP2 of the second light blocking layer LS2, and the third opening OP3 of the third light blocking layer LS3 may serve as a collimator of the optical sensor FS corresponding to the sensing unit SU embedded in the electronic device 200. In particular, in fig. 5, due to the three light blocking layers, more stray light may be blocked compared to the first embodiment, for example, light rays R _5, R _6 having a larger angle with respect to the third direction D3 may be blocked by the light blocking layer (e.g., the second light blocking layer LS2) located in the middle. Further, the distance of the second light blocking layer LS2 and the first light blocking layer LS1 in the third direction D3 may be the same or different from the distance of the second light blocking layer LS2 and the third light blocking layer LS3 in the third direction D3. In addition, in the present embodiment, the size Sa is a size of the first opening OP1, the distance Db is a distance between the first outer surface LS1a of the first light blocking layer LS1 and the third outer surface LS3a of the third light blocking layer LS3, the distance Df is a distance between an outer surface of the electronic device 200 (i.e., an outer surface of the cover plate COV) and the third outer surface LS3a of the third light blocking layer LS3, and details of the size Sa, the size Sb, the distance Db and the distance Df can refer to the first embodiment and are not described herein again.

In addition to this, in other embodiments, a third light blocking layer LS3 may be disposed in the second substrate 140 such that the third light blocking layer LS3 is located between the first light blocking layer LS1 and the second light blocking layer LS2 to achieve a similar effect.

Referring to fig. 6 and 7, fig. 6 is a detailed top view of a part of components of an electronic device according to a third embodiment of the invention, and fig. 7 is a structural cross-sectional view taken along a section line B-B' of fig. 6. As shown in fig. 6 and 7, the difference between the present embodiment and the first embodiment is that the optical sensor FS of the sensing unit SU of the electronic device 300 of the present embodiment can be overlapped with the display switch element ST in the third direction D3. Therefore, the opening area of the display opening DOP can be increased to increase the aperture ratio of the sub-pixel (e.g., increase the area of the pixel electrode PE). In addition, since the optical sensor FS may overlap the display switch element ST in the third direction D3, in order to avoid interference of such elements with each other in the third direction D3, the distance between the optical sensor FS and the display switch element ST in the third direction D3 may be increased. According to some embodiments, at least one or more layers of the display switching elements ST and at least one or more layers of the sensing switching elements DT are the same layer. For example, as described above, the active layer in the display switching element ST may be the same layer as the active layer in the sensing switching element DT. Therefore, increasing the distance between the optical sensor FS and the display switching element ST in the third direction D3 also means increasing the distance between the optical sensor FS and the sensing switching element DT in the third direction D3. Referring to fig. 4 and 7, IN fig. 4, an insulating layer IN3-1 is disposed between the optical sensor FS and the second conductive layer 124, whereas IN fig. 7, an insulating layer IN3-1 and an insulating layer IN3-2 are disposed between the optical sensor FS and the second conductive layer 124. That is, compared to fig. 4 of the first embodiment, the circuit structure layer 120 of fig. 7 of the present embodiment may include an additional insulating layer IN3-2, and the optical sensor FS and the second conductive layer 124 IN fig. 7 have a larger distance therebetween, thereby reducing interference between these elements IN the third direction D3.

Referring to fig. 8, fig. 8 is a schematic view of an arrangement of components of an electronic device according to a fourth embodiment of the invention. As shown in fig. 8, the electronic device 400 of the present embodiment has another type of collimator. In detail, the electronic device 400 may include an optical film 410 disposed on the second side 140b of the second substrate 140, wherein the optical film 410 may have a function of converging light. In the present embodiment, the optical film layer 410 may include a protrusion structure 410a as, for example, a micro lens structure, but not limited thereto. In the embodiment, the optical sensor FS may correspond to the protruding structure 410a, so that the reflected light of the fingerprint feature point corresponding to the optical sensor FS is converged after passing through the protruding structure 410a and irradiates the optical sensor FS, and meanwhile, the influence of stray light is reduced, thereby improving the accuracy of the sensing unit SU detecting the fingerprint profile. In fig. 8, for example, the optical sensor FS may overlap with the at least one protrusion structure 410a in the third direction D3, but is not limited thereto. The number of the protruding structures 410a corresponding to the optical sensor FS and the corresponding manner between the optical sensor FS and the protruding structures 410a can be designed according to the requirement. In addition, in the embodiment, the optical film layer 410 may be attached to the second side 140b of the second substrate 140 by an adhesive layer AH1 and located between the second substrate 140 and the cover plate COV, but not limited thereto. According to some embodiments, as shown in fig. 8, there is one optical sensor FS in one sub-pixel SPX, and one optical sensor FS corresponds to one protrusion structure 410 a. According to other embodiments, although not shown, there is no need to provide one optical sensor FS in each sub-pixel SPX, for example, only one optical sensor FS may be provided in a plurality of sub-pixels SPX (e.g., 3 or 6), and only one protrusion structure 410a may be provided in a plurality of sub-pixels SPX (e.g., 3 or 6).

Referring to fig. 9, fig. 9 is a schematic view of an arrangement of components of an electronic device according to a fifth embodiment of the invention. As shown in fig. 9, the difference between the present embodiment and the fourth embodiment is that the electronic device 500 of the present embodiment further includes a first light blocking layer LS1 and a second light blocking layer LS2, wherein the first light blocking layer LS1 has a first opening OP1, the second light blocking layer LS2 has a second opening OP2, the first opening OP1 and the second opening OP2 correspond to the protrusion structure 410a, and the first opening OP1, the second opening OP2 overlap the optical sensor FS. The detailed descriptions of the first light blocking layer LS1 and the second light blocking layer LS2 can refer to the description of the first embodiment, and are not repeated herein. In fig. 9, the optical sensor FS, the first opening OP1, the second opening OP2 and the protrusion structure 410a may overlap in the third direction D3, but not limited thereto. The number of the protrusion structures 410a corresponding to the optical sensor FS, the first opening OP1, and the second opening OP2, and the corresponding manner between these structures can be designed according to the requirement. In the present embodiment, the combination of the first opening OP1, the second opening OP2 and the protrusion structure 410a can be used as a collimator of the optical sensor FS corresponding to the sensing unit SU embedded in the electronic device 500. In other embodiments, the electronic device 500 may include only one of the first light blocking layer LS1 and the second light blocking layer LS2, and thus, in this case, the protrusion structure 410a may be combined with the first opening OP1 or the second opening OP2 as a collimator of the optical sensor FS corresponding to the sensing unit SU embedded in the electronic device 500.

In summary, according to some embodiments, an electronic device is provided with an opening of a light blocking layer, overlapping with an optical sensor. According to some embodiments, the electronic device is provided with a protruding structure of the optical film layer, overlapping the optical sensor. According to the configuration of some embodiments, the interference of the stray light on the sensing unit can be reduced, so as to improve the accuracy of detecting the fingerprint profile by the sensing unit.

The above description is only an embodiment of the present invention, and is not intended to limit the present invention, and it will be apparent to those skilled in the art that various modifications and variations can be made in the present invention, and features of the embodiments may be arbitrarily mixed and matched without departing from the spirit or conflict of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. An electronic device, comprising:

a first substrate;

an optical sensor disposed on the first substrate;

a second substrate including a first side facing the optical sensor and a second side opposite to the first side;

a first light blocking layer disposed on the first side and including a first opening; and

a second light blocking layer disposed on the second side and including a second opening;

wherein the first opening, the second opening and the optical sensor overlap.

2. The electronic device of claim 1, further comprising a display layer disposed between the first substrate and the second substrate.

3. The electronic device of claim 1, wherein the first light blocking layer comprises a first outer surface and the second light blocking layer comprises a second outer surface, the distance between the first outer surface and the second outer surface being greater than or equal to 20 micrometers and less than or equal to 150 micrometers.

4. The electronic device of claim 3, wherein a ratio of the distance between the first outer surface and the second outer surface to a size of the first opening is greater than or equal to 2 and less than or equal to 15.

5. The electronic device of claim 1, further comprising a third light blocking layer, wherein the second light blocking layer is disposed between the first light blocking layer and the third light blocking layer.

6. The electronic device of claim 1, further comprising:

a third substrate including a third side facing the second substrate and a fourth side opposite to the third side;

a third light blocking layer disposed on the fourth side and including a third opening overlapping the first opening and the second opening.

7. The electronic device of claim 6, wherein the second substrate comprises glass and the third substrate comprises a polymer layer.

8. The electronic device of claim 1, further comprising a circuit structure layer disposed on the first substrate, the circuit structure layer including the optical sensor, a sensing switch element and a display switch element, wherein the sensing switch element is electrically connected to the optical sensor.

9. An electronic device, comprising:

a first substrate;

an optical sensor disposed on the first substrate;

a second substrate including a first side facing the optical sensor and a second side opposite to the first side; and

an optical film layer disposed on the second side of the second substrate and including a protrusion structure;

wherein the protruding structure overlaps the optical sensor.

10. The electronic device of claim 9, further comprising a first light blocking layer disposed on the first side of the second substrate and comprising a first opening, wherein the first opening overlaps the protruding structure.