CN112034012A - MEMS gas sensor gas-sensitive unit and preparation method thereof - Google Patents
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- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/128—Microapparatus
Abstract
The application discloses a gas-sensitive unit of an MEMS gas sensor and a preparation method, wherein the preparation method comprises the following steps: preparing a first metal electrode layer and an insulating layer on a substrate from bottom to top in sequence; preparing a second metal electrode layer with a first hole on the insulating layer; forming a second hole in the area of the insulating layer, where the first hole projects on the insulating layer, and exposing the first metal electrode layer through the first hole and the second hole; covering a gas-sensitive material on the second metal electrode layer to form a gas-sensitive structure layer, so that the gas-sensitive material is communicated with the first metal electrode layer and the second metal electrode layer at the first hole and the second hole; and patterning the gas-sensitive structure layer, reserving the gas-sensitive materials reserved in the first hole and the second hole, removing the rest gas-sensitive materials in the gas-sensitive structure layer, and finishing the preparation of the gas-sensitive unit. The application can reduce the total volume of the effective part of the gas sensitive structure by a wide margin, and then can promote the sensitivity and the response speed of the sensor.
Description
Technical Field
The invention belongs to the technical field of micro-motor manufacturing, and relates to an MEMS gas sensor gas-sensitive unit and a preparation method thereof.
Background
The gas sensor is an important component in the technical field of MEMS sensing, and the realization of high sensitivity and quick response capability to target gas under the constraint conditions of low power consumption, small size and low cost is an important technical research and development direction of the MEMS gas sensor.
The existing main scheme for improving the sensitivity and response speed of the MEMS gas sensor comprises the following steps:
1. the performance of the sensitive material is improved: the improvement of the gas-sensitive performance of the sensitive material has an important meaning for the improvement of the device-level performance, but is limited by the research in the field of the MEMS gas-sensitive material, and the current material which has good environmental stability and gas-sensitive capability mainly comprises metal oxide and partial high molecular polymer, and usually cannot improve the sensitivity, response speed and long-term stability of the material at the same time, and the indexes are often restricted by each other.
2. Control of the operating environment of the gas sensor (typically device heating): the working environment of the gas sensor is controlled, so that the response capability of the gas sensitive material to target gas can be effectively improved, and the sensitivity and the response speed can be simultaneously improved.
Disclosure of Invention
In order to solve the defects in the related art, the application provides an MEMS gas sensor gas-sensitive unit and a preparation method thereof, the gas-sensitive unit structure of the MEMS gas sensor is improved, and the improvement of the self performance of the sensor is realized in the current MEMS process frame on the premise of not additionally adding an additional environment control means. The specific technical scheme is as follows:
in a first aspect, the present application provides a method for preparing a gas-sensitive cell of a MEMS gas sensor, the method comprising:
preparing a first metal electrode layer and an insulating layer on a substrate from bottom to top in sequence;
preparing a second metal electrode layer with a first hole on the insulating layer, wherein the first hole, the insulating layer and the first metal electrode layer have an overlapping region in the projection direction;
forming a second hole in the insulating layer in the area of the first hole projected on the insulating layer, and exposing the first metal electrode layer through the first hole and the second hole;
covering a gas-sensitive material on the second metal electrode layer to form a gas-sensitive structure layer, so that the gas-sensitive material is communicated with the first metal electrode layer and the second metal electrode layer at the first hole and the second hole;
and patterning the gas-sensitive structure layer, reserving the gas-sensitive materials reserved in the first hole and the second hole, removing the rest gas-sensitive materials in the gas-sensitive structure layer, and finishing the preparation of the gas-sensitive unit.
Optionally, the sequentially preparing the first metal electrode layer and the insulating layer from bottom to top on the substrate includes:
laying a first mask plate on the substrate, and forming the first metal electrode layer on the substrate through a sputtering-patterning-etching process;
and the insulating layer is formed by film-paving on the first metal electrode layer in a whole piece.
Optionally, the preparing a second metal electrode layer with a first hole on the insulating layer includes:
and laying a second mask plate on the insulating layer, and forming a second metal electrode layer with the first holes on the insulating layer through a sputtering-patterning-etching process.
Optionally, the covering of the second metal electrode layer with a gas-sensitive material to form a gas-sensitive structure layer includes:
and spin-coating the gas-sensitive material on the second metal electrode layer in a whole piece to form the gas-sensitive structure layer.
Optionally, the retaining the gas-sensitive material retained in the first hole and the second hole includes:
and gas-sensitive materials are reserved on the inner walls of the first hole and the second hole.
In a second aspect, the present application also provides a gas sensor unit of a MEMS gas sensor, which is obtained by the preparation method as provided in the first aspect and the various alternatives of the first aspect.
Optionally, the substrate is a surface oxide layer of a silicon oxide wafer, and the thickness of the substrate is the same as the original thickness of the surface oxide layer of the silicon oxide wafer.
Optionally, the thickness of the first metal electrode layer is 90nm to 110nm, and the first metal electrode layer is made of a conductive metal material.
Optionally, the insulating layer is formed by directly and integrally film-forming on the first metal electrode layer, and the material of the insulating layer is SiO2, Si3N4, or Al2O 3.
Optionally, the thickness of the second metal electrode layer is 90nm to 110nm, and the material of the first metal electrode layer is a conductive metal material.
Through above-mentioned technical scheme, this application can realize following beneficial effect at least:
the gas-sensitive unit is provided with a sandwich multilayer structure comprising two metal electrode layers and a middle insulating layer in the thickness direction, a hole is formed in a second metal electrode layer (an upper layer), the insulating layer covered in the hole region is removed, and a gas-sensitive structure layer is prepared on the second insulating layer, so that a gas-sensitive film can be communicated with the first metal electrode layer and the second metal electrode layer at the hole; because the effective part of gas-sensitive structure layer only distributes in the lateral wall edge of trompil depth direction, this scheme can reduce gas-sensitive structure effective part's total volume by a wide margin, increases the specific surface area that gas-sensitive structure layer can take place interactive effective part with external gas simultaneously, and then can promote sensor's sensitivity and response speed.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a method of making a gas sensing cell of a MEMS gas sensor provided in an embodiment of the present application;
FIG. 2A is a top view of a first metal electrode layer provided in one embodiment of the present application fabricated on a substrate;
FIG. 2B is a top view of a first metal electrode layer formed on a substrate as provided in another embodiment of the present application;
FIG. 2C is a schematic view of FIG. 2A on section AA 'or FIG. 2B on section BB';
FIG. 3A is a top view of the second metal electrode layer laid on the substrate of FIG. 2A;
FIG. 3B is a top view of the second metal electrode layer laid on the substrate of FIG. 2B;
FIG. 3C is a schematic view of FIG. 3A on section AA 'or FIG. 3B on section BB';
FIG. 4A is a top view of the insulating layer with a second via formed through the first via in the substrate shown in FIG. 3A;
FIG. 4B is a top view of the insulating layer with a second via formed through the first via in the same manner as in FIG. 3B;
FIG. 4C is a schematic view of FIG. 4A on section AA 'or FIG. 4B on section BB';
FIG. 5A is a top view of a gas sensitive structure layer prepared on the basis of FIG. 4A;
FIG. 5B is a schematic view of the cross-section AA' after FIG. 5A with the remaining gas-sensitive material remaining in the first and second cavities and the remaining gas-sensitive material removed;
FIG. 5C is a schematic cross-sectional view of FIG. 5B with the gas sensitive material removed from the cavity, leaving the gas sensitive material only on the inner wall of the cavity.
Wherein the reference numbers are as follows:
10. a substrate; 20. a first metal electrode layer; 30. an insulating layer; 31. a second hole; 40. a second metal electrode layer; 41. a first hole; 50. and the gas sensitive structure layer.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
The MEMS gas sensor is generally a multilayer structure comprising an electrode layer, an insulating layer, a gas-sensitive structure layer and the like, and is limited by MEMS processing technological conditions, the conventional MEMS gas sensor manufacturing process generally prepares graphical metal electrodes on the insulating layer, the electrodes are divided into two groups or more and are in a comb-tooth shape, and then the gas-sensitive structure layer is prepared on the electrodes through a thin film or thick film process, but the step relates to a more complex chemical process and is difficult to be carried out by the conventional MEMS process. Obviously, the structural design and the processing quality of the gas-sensitive structure layer have decisive influence on the performance level of the MEMS gas sensor, and the application provides a novel gas-sensitive unit of the MEMS gas sensor and a preparation process method thereof in a standard MEMS process frame, so as to controllably reduce the absolute volume of the gas-sensitive structure layer under the constraint of conventional process capability and simultaneously increase the specific surface area of an effective part of the gas-sensitive structure layer capable of interacting with external gas.
Fig. 1 is a preparation method of a gas sensing unit of a MEMS gas sensor provided in an embodiment of the present application, the preparation method including:
the substrate referred to herein may be a surface oxide layer of a silicon oxide wafer, and the thickness of the substrate is the same as the original thickness of the surface oxide layer of the silicon oxide wafer.
When the first metal electrode layer and the insulating layer are sequentially prepared from bottom to top on the substrate, the method can comprise the following two steps:
s1, laying a first mask plate on the substrate, and forming a first metal electrode layer on the substrate through sputtering-patterning-etching processes;
the thickness of the first metal electrode layer may be 90nm to 110nm, for example, the thickness of the first metal electrode layer is 90nm, 95nm, 100nm, 105nm, 110nm, and the like, and the thickness thereof may be set according to actual needs. The material of the first metal electrode layer is a conductive metal material, such as a metal material with excellent conductivity, e.g., gold, silver, or aluminum.
The first mask plate can be a mask plate with a regular shape or a mask plate with an irregular shape.
The schematic diagram after step S1 may be as shown in fig. 2A and 2B, where fig. 2A and 2B illustrate two different shapes of the first metal electrode layer formed on the substrate, and the cross-sectional schematic diagrams of fig. 2A and 2B are as shown in fig. 2C, where the first metal electrode layer 20 is formed on the substrate 10.
And S2, spreading a film on the first metal electrode layer to form an insulating layer.
The insulating layer may be formed by film deposition directly on the first metal electrode layer 20, and the material of the insulating layer may be SiO2, Si3N4, Al2O3, or the like.
102, preparing a second metal electrode layer with a first hole on the insulating layer, wherein the first hole, the insulating layer and the first metal electrode layer have a superposition area in the projection direction;
when the second metal electrode layer with the first holes is prepared on the insulating layer, the second mask plate is laid on the insulating layer, and the second metal electrode layer with the first holes is formed on the insulating layer through the sputtering-imaging-corrosion process.
The second mask plate can be a mask plate with a regular shape or a mask plate with an irregular shape.
The first holes may be circular or non-circular.
Fig. 3A and 3B show schematic diagrams of two different shapes of a second metal electrode layer 40 having a first hole 41 on an insulating layer 30, and fig. 3A and 3B show schematic diagrams of cross sections of fig. 3A and 3B as shown in fig. 3C, in which the second metal electrode layer 40 is formed on the insulating layer 30.
103, forming a second hole in the area, projected on the insulating layer, of the first hole on the insulating layer, and exposing the first metal electrode layer through the first hole and the second hole;
the projections of the second aperture and the first aperture 41 overlap, the projection of the first aperture 41 is larger than the projection of the second aperture, or the projection of the first aperture 41 and the projection of the second aperture are the same.
Fig. 4A and 4B are schematic diagrams illustrating the formation of the second hole 31 in the area of the insulating layer 30, where the first hole 41 projects onto the insulating layer 30, in fig. 4A and 4B, the formation of the second hole 31 in the insulating layer 30 is illustrated in two different shapes, and fig. 4A and 4B are schematic cross-sectional diagrams illustrating the formation of the second hole 31 in the insulating layer 30 through the first hole 41, in fig. 4C.
104, covering a gas-sensitive material on the second metal electrode layer to form a gas-sensitive structure layer, so that the gas-sensitive material is communicated with the first metal electrode layer and the second metal electrode layer at the first hole and the second hole;
according to the application, when the gas-sensitive material is covered on the second metal electrode layer 40 to form the gas-sensitive structure layer, the gas-sensitive material is coated on the second metal electrode layer 40 in a whole spin mode to form the gas-sensitive structure layer.
A schematic diagram of covering the second metal electrode layer 40 with the gas sensitive material to form the gas sensitive structure layer 50 can be seen from fig. 5A, and fig. 5A shows a top view of preparing the gas sensitive structure layer 50 based on fig. 4A.
And 105, patterning the gas-sensitive structure layer, reserving the gas-sensitive materials reserved in the first hole and the second hole, removing the rest gas-sensitive materials in the gas-sensitive structure layer, and finishing the preparation of the gas-sensitive unit.
Fig. 5B is a schematic diagram of the cross section AA' after the gas-sensitive materials retained in the first hole 41 and the second hole 31 are removed after fig. 5A.
When the gas-sensitive materials retained in the first hole and the second hole are retained, the gas-sensitive materials can be only retained on the inner walls of the first hole and the second hole, so that the total volume of the gas-sensitive structure layer is reduced, and the specific surface area is increased. Fig. 5C is a schematic cross-sectional view of fig. 5B, in which the gas-sensitive material in the hole is removed, and the gas-sensitive material is left only on the inner wall of the hole.
In summary, according to the preparation method of the gas-sensitive unit of the MEMS gas sensor provided by the present application, the obtained gas-sensitive unit has a sandwich multilayer structure including two metal electrode layers and a middle insulating layer in the thickness direction, a hole is formed in the second metal electrode layer (upper layer), the insulating layer covered in the hole region is removed, and a gas-sensitive structure layer is prepared on the second insulating layer, so that the gas-sensitive film is communicated with the first metal electrode layer and the second metal electrode layer at the hole; because the effective part of gas-sensitive structure layer only distributes in the lateral wall edge of trompil depth direction, this scheme can reduce gas-sensitive structure effective part's total volume by a wide margin, increases the specific surface area that gas-sensitive structure layer can take place interactive effective part with external gas simultaneously, and then can promote sensor's sensitivity and response speed.
In addition, the application also provides a gas-sensitive unit of the MEMS gas sensor, which is obtained by the preparation method shown in fig. 1, and the specific manufacturing process flow can be referred to the description of each step in fig. 1.
In practical implementation, the substrate may be a surface oxide layer of a silicon oxide wafer, and the thickness of the substrate is the same as the original thickness of the surface oxide layer of the silicon oxide wafer.
Optionally, the thickness of the first metal electrode layer may be 90nm to 110nm, for example, the thickness of the first metal electrode layer is 90nm, 95nm, 100nm, 105nm, 110nm, and the like, and the thickness may be set according to actual needs. The material of the first metal electrode layer is a conductive metal material, such as a metal material with excellent conductivity, e.g., gold, silver, or aluminum.
Alternatively, the insulating layer may be formed by directly forming a film on the first metal electrode layer in a monolithic manner, and the insulating layer is made of SiO2, Si3N4, Al2O3, or the like.
Similarly, the thickness of the second metal electrode layer may be 90nm to 110nm, for example, the thickness of the second metal electrode layer is 90nm, 95nm, 100nm, 105nm, 110nm, etc., and the thickness thereof may be set according to actual needs. The material of the second metal electrode layer is a conductive metal material, such as a metal material with excellent conductivity, e.g., gold, silver, aluminum, etc.
In summary, the gas-sensitive unit of the MEMS gas sensor provided by the present application has a sandwich multilayer structure including two metal electrode layers and an intermediate insulating layer in the thickness direction, a hole is formed in the second metal electrode layer (upper layer), the insulating layer covering the hole region is removed, and a gas-sensitive structure layer is prepared on the second insulating layer, so that the gas-sensitive film communicates with the first metal electrode layer and the second metal electrode layer at the hole; because the effective part of gas-sensitive structure layer only distributes in the lateral wall edge of trompil depth direction, this scheme can reduce gas-sensitive structure effective part's total volume by a wide margin, increases the specific surface area that gas-sensitive structure layer can take place interactive effective part with external gas simultaneously, and then can promote sensor's sensitivity and response speed.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (10)
1. A preparation method of a gas-sensitive unit of a MEMS gas sensor is characterized by comprising the following steps:
preparing a first metal electrode layer and an insulating layer on a substrate from bottom to top in sequence;
preparing a second metal electrode layer with a first hole on the insulating layer, wherein the first hole, the insulating layer and the first metal electrode layer have an overlapping region in the projection direction;
forming a second hole in the insulating layer in the area of the first hole projected on the insulating layer, and exposing the first metal electrode layer through the first hole and the second hole;
covering a gas-sensitive material on the second metal electrode layer to form a gas-sensitive structure layer, so that the gas-sensitive material is communicated with the first metal electrode layer and the second metal electrode layer at the first hole and the second hole;
and patterning the gas-sensitive structure layer, reserving the gas-sensitive materials reserved in the first hole and the second hole, removing the rest gas-sensitive materials in the gas-sensitive structure layer, and finishing the preparation of the gas-sensitive unit.
2. The method according to claim 1, wherein the sequentially forming a first metal electrode layer and an insulating layer on a substrate from bottom to top comprises:
laying a first mask plate on the substrate, and forming the first metal electrode layer on the substrate through a sputtering-patterning-etching process;
and the insulating layer is formed by film-paving on the first metal electrode layer in a whole piece.
3. The method according to claim 1, wherein the preparing the second metal electrode layer having the first hole on the insulating layer comprises:
and laying a second mask plate on the insulating layer, and forming a second metal electrode layer with the first holes on the insulating layer through a sputtering-patterning-etching process.
4. The preparation method according to claim 1, wherein the step of covering the second metal electrode layer with a gas-sensitive material to form a gas-sensitive structure layer comprises the following steps:
and spin-coating the gas-sensitive material on the second metal electrode layer in a whole piece to form the gas-sensitive structure layer.
5. The method of claim 1, wherein the retaining gas-sensitive material retained within the first and second holes comprises:
and gas-sensitive materials are reserved on the inner walls of the first hole and the second hole.
6. A gas-sensitive cell of a MEMS gas sensor, wherein the gas-sensitive cell is obtained by the preparation method of any one of claims 1 to 5.
7. The gas-sensitive cell of claim 6, wherein the substrate is a surface oxide layer of a silicon oxide wafer, and the substrate has a thickness that is the same as an original thickness of the surface oxide layer of the silicon oxide wafer.
8. The gas sensor of claim 6, wherein the first metal electrode layer has a thickness of 90nm to 110nm, and the material of the first metal electrode layer is a conductive metal material.
9. The gas-sensitive cell of claim 6, wherein the insulating layer is formed by direct monolithic film formation on the first metal electrode layer, and the material of the insulating layer is SiO2, Si3N4, or Al2O 3.
10. The gas sensor of claim 6, wherein the second metal electrode layer has a thickness of 90nm to 110nm, and the first metal electrode layer is made of a conductive metal material.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010427355.4A CN112034012B (en) | 2020-05-19 | MEMS gas sensor gas-sensitive unit and preparation method thereof |
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| CN202010427355.4A CN112034012B (en) | 2020-05-19 | MEMS gas sensor gas-sensitive unit and preparation method thereof |
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| CN112034012A true CN112034012A (en) | 2020-12-04 |
| CN112034012B CN112034012B (en) | 2024-04-23 |
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