CN112014983B - Electro-optical switch based on lithium niobate waveguide and manufacturing method thereof - Google Patents

Electro-optical switch based on lithium niobate waveguide and manufacturing method thereof Download PDF

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CN112014983B
CN112014983B CN202010947193.7A CN202010947193A CN112014983B CN 112014983 B CN112014983 B CN 112014983B CN 202010947193 A CN202010947193 A CN 202010947193A CN 112014983 B CN112014983 B CN 112014983B
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lithium niobate
waveguide
isosceles triangle
length
silicon dioxide
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CN112014983A (en
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卢惠辉
陈哲
张欣悦
尚菊梅
董江莉
关贺元
李克
刘丽玲
丘文涛
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Jinan University
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
    • G02B6/1345—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/0305—Constructional arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/0305—Constructional arrangements
    • G02F1/0316—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/1204—Lithium niobate (LiNbO3)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12145—Switch
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12169—Annealing
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12183—Ion-exchange

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention relates to the technical field of electro-optical modulation and high-speed optical communication, in particular to an electro-optical switch based on a lithium niobate waveguide and a manufacturing method thereof. The method is used for solving the problems of large extinction ratio, low switching frequency and limited bandwidth of the traditional electro-optical switch. The structure of the electro-optical switch from top to bottom is as follows: the array electrode, the buffer layer and the substrate are graded; the gradual change array electrode is an isosceles triangle microstructure array electrode unit with a group of bottom edges regularly changing; the substrate is a blocky lithium niobate or lithium niobate thin film integrated waveguide, the lithium niobate thin film integrated waveguide is formed by combining monocrystalline lithium niobate with a substrate, and proton exchange lithium niobate waveguides are wrapped in the blocky lithium niobate or the monocrystalline lithium niobate; the proton exchange lithium niobate waveguide forms a waveguide area, the waveguide area is Y-shaped, the waveguide area comprises an input end, a gradual change area and an output end, and the area outside the waveguide area is a non-waveguide area. Through the technical scheme, the technical effects of low loss, strong stability, low driving voltage and large modulation bandwidth are achieved.

Description

Electro-optical switch based on lithium niobate waveguide and manufacturing method thereof
Technical Field
The invention relates to the technical field of electro-optical modulation and high-speed optical communication, in particular to an electro-optical switch based on a lithium niobate waveguide and a manufacturing method thereof.
Background
The optical switch can realize the switching of light beams in time, space and wavelength, is a key device of optical information systems such as optical communication, optical computers, optical information processing and the like, plays a role in cross interconnection of add-drop signals and multipath signals, and affects the aspects of life of people. In recent years, the rapid development of communication systems has placed higher demands on the performance of optical networks, such as capacity, rate, security, etc.
Optical switches can be divided into two main categories, mechanical and non-mechanical. The mechanical optical switch can be divided into a traditional mechanical optical switch and a micro-electro-mechanical system (MEMS) optical switch, and the working principle is that a driving unit drives a movable optical fiber or prism to complete the movement of optical components under the specific instruction requirement, so that the transmission light path is changed. The non-mechanical optical switch can be divided into a waveguide type optical switch and an all-optical switch, wherein the waveguide type optical switch generally changes the refractive index distribution of a waveguide medium layer based on the electro-optical effect, the acousto-optic effect, the magneto-optical effect, the thermo-optic effect and the like of materials, so that the transmission direction of transmission light is changed, and the switching of incident light between two or more output ends can be realized. The all-optical switch mainly excites the semiconductor material by controlling the photo-generated carriers according to the change of the optical refractive index in the semiconductor material, so as to cause the change of the refractive index of the material, and the optical signals in the transmission direction generate phase differences, thereby outputting the required signals.
Mechanical optical switches based on optical fiber collimators and micromirrors generally suffer from long switching times and poor repeatability due to the movement of components in the optical path. The optical switch based on the thermo-optic effect is mainly characterized by low cost, low crosstalk, low power consumption, polarization insensitivity and non-wavelength dependence, but has the disadvantages of slow response time and large insertion loss. The optical switch based on the acousto-optic effect has no mechanical movement part, has the advantages of convenience, energy conservation, high reliability and the like, but has narrow modulation bandwidth and higher cost. The liquid crystal optical switch realizes the switching function by controlling the liquid crystal molecular direction according to the applied external electric field, has good dynamic scattering property, but has larger insertion loss, and the switching speed is increased to increase the power consumption of the equipment. The electro-optical switch uses the electro-optical effect of the material, and changes the dielectric constant of the material by an external electric field, thereby controlling the amplitude, phase and frequency of the transmitted light. The optical switch based on planar optical waveguide technology has the characteristics of stability, flexibility, good compatibility and the like, and becomes a key device in an all-optical switching system.
With the development of communication networks, optical switches are going to develop towards integration, large modulation bandwidth, low insertion loss, fast modulation rate, high switching contrast, long service life, etc. The response time of the traditional optical switch is in the magnitude of mu s and ms, the optical switch should be developed to the magnitude of ns and even fs in the future, and the development of the optical switch becomes an important work in optical research.
The lithium niobate has excellent electro-optic (higher electro-optic coefficient: 30.8 pm/V), acousto-optic, nonlinear optical, piezoelectric properties and good transmittance in visible light and near infrared bands, the corresponding speed of the lithium niobate optical switch can reach ns magnitude, the loss is low, and the lithium niobate optical switch has better market potential. By improving the process of the lithium niobate and designing an electrode with a certain structure on the lithium niobate waveguide, the integrated lithium niobate optical switch chip is enabled to be switched rapidly and stably in an optical path system, and is more suitable for the working modes of bandwidth and high-speed modulation.
Disclosure of Invention
The invention aims to overcome at least one defect (deficiency) of the prior art, provides an electro-optical switch based on a lithium niobate waveguide and a manufacturing method thereof, and aims to solve the problems of large extinction ratio, low switching frequency and limited bandwidth of the traditional electro-optical switch, and provides a brand new solution for the rapid development requirement of an optical network so as to realize the technical effects of low loss, strong stability, low driving voltage and large modulation bandwidth.
The technical scheme adopted by the invention is that an electro-optical switch based on lithium niobate waveguide is designed, and the electro-optical switch has a structure from top to bottom that: the array electrode, the buffer layer and the substrate are graded; the gradual change array electrode is an isosceles triangle microstructure array electrode unit with a group of bottom edges regularly changing; the substrate is a blocky lithium niobate or lithium niobate thin film integrated waveguide, the lithium niobate thin film integrated waveguide is formed by combining monocrystalline lithium niobate with a substrate, and proton exchange lithium niobate waveguides are wrapped in the blocky lithium niobate or the monocrystalline lithium niobate; the proton exchange lithium niobate waveguide forms a waveguide area, the waveguide area is Y-shaped, the waveguide area comprises an input end, a gradual change area and an output end, the output end is two branch single-mode waveguides, the branch single-mode waveguides are symmetrical relative to the center of the gradual change area, and the area outside the waveguide area is a non-waveguide area. Through designing the structure of multilayer arrangement, and designed a gradual change array electrode that isosceles triangle-shaped's micro-structure electrode unit constitutes on the surface, make full use of the electro-optic characteristic of lithium niobate crystal. Meanwhile, the silicon dioxide layer and the lithium niobate waveguide have high refractive index contrast ratio, so that optical loss can be reduced when the device works. The structure enables the electric field distribution of the transmission light field and the electrode to realize larger overlapping so as to excite higher electro-optic effect, thereby realizing local larger refractive index change, being beneficial to improving modulation efficiency and reducing driving voltage and power consumption of the device.
Further, the isosceles triangle microstructure array electrode units with the base regularly changed are specifically that the base of the isosceles triangle is arranged on the same straight line, and no gap exists between the base of the previous isosceles triangle and the base of the next isosceles triangle; the length of the base of the isosceles triangle is increased in an arithmetic progression, and the tolerance of the arithmetic progression is the length of the base of the minimum isosceles triangle. A plurality of isosceles triangle microstructure electrode units with smaller areas form a gradual change array electrode, so that the beam deflection can be well realized.
Further, the height of the isosceles triangle is determined by the width of the gradual change region, the length of the gradual change region and the length of the bottom side of the isosceles triangle; the width of the gradual change region corresponds to the upper bottom and the lower bottom of the isosceles trapezoid; the length of the gradual change region corresponds to the height of an isosceles trapezoid; the transition region is arranged right below the transition array electrode, the top view of the transition region (3102) is an isosceles trapezoid, one waist of the isosceles trapezoid corresponds to the bottom edge of the isosceles triangle, and the other waist corresponds to the vertex corresponding to the bottom edge of the isosceles triangle. The design has the advantages that the effective width of the lithium niobate waveguide can be fully utilized, unnecessary material or energy loss is avoided, and the utilization rate is improved.
Further, the height of the isosceles triangle is determined by the width of the gradual change region, the length of the gradual change region and the length of the bottom side of the isosceles triangle; the width of the gradual change region corresponds to the upper bottom and the lower bottom of the isosceles trapezoid; the length of the gradual change region corresponds to the height of an isosceles trapezoid; the relation between the height of the isosceles triangle and the width of the gradual change region, the length of the gradual change region and the length of the bottom edge of the isosceles triangle is as follows: recording the isosceles trapezoid as a trapezoid OCBA, wherein the OCBA is four vertexes of the trapezoid; two waists of the trapezoid OCBA are OC and AB, the OC is taken as an x-axis, the AB is positioned above the OC, and a vertex O is taken as an origin, so that a two-dimensional coordinate system is established; length of line segment OA is d 1 The length of the upper bottom corresponding to the isosceles trapezoid is L 1 The method comprises the steps of carrying out a first treatment on the surface of the The length of the line segment CB is d 2 The length of the bottom of the isosceles trapezoid is corresponding to the L-shaped straight line 2 The method comprises the steps of carrying out a first treatment on the surface of the The distance between the line segment OA and the line segment CB is d 3 The method comprises the steps of carrying out a first treatment on the surface of the The lengths of the line segment OC and the line segment AB correspond to the waist length of the isosceles trapezoid, and the straight line where AB is located is L 4 The bottom edge of the isosceles triangle is on a line segment OC, and the vertex corresponding to the bottom edge is on AB;
L 1 the linear equation of (2) is: y is 1 ＝k 1 *x，L 2 Is the slope k of the straight line of (2) 2 ＝k 1 ；
The sitting mark at the point A is (x) A ,y A ) Calculate x A ＝-|d 1 *costan -1 k 1 |，y A ＝K 1 *x A ；
The sitting mark at the C point is (x) c 0), calculated to
The sitting mark at the point B is (x) B ,y B ) Calculate x B ＝x c -|d 2 *cos tan -1 k 2 |,y B ＝|d 2 *sin tan -1 k 2 |；
L 4 The linear equation is:
the coordinates corresponding to the midpoint of the bottom edge of the isosceles triangle are recorded as (X 1 ,0)，(X 2 ,0)，……(X n ,0)(n≥1)，X 1 Corresponding to the midpoint value of the bottom edge of the initial isosceles triangle, X n The value of (2) is the sum of the lengths of the bottom edges of the front n-1 isosceles triangles plus half of the length of the bottom edge of the nth isosceles triangle; finally, X is n Substituted into L 4 The y value obtained by the linear equation is the height of the corresponding isosceles triangle. By the calculation method, the area and arrangement mode of the isosceles triangle can be accurately known, and the specific deflection condition of the deflected light beams, the width and the length of the input end and the output end can be conveniently calculated.
Compared with the prior art, the invention has the beneficial effects that: according to the invention, the design of the array electrode is formed by designing a multi-layer arrangement structure and the gradient microstructure electrode units of the isosceles triangle, so that the electric field distribution of the transmission light field and the electrodes is greatly overlapped, thereby exciting a higher electro-optic effect, further realizing local larger refractive index change, being beneficial to improving the modulation efficiency and reducing the driving voltage and the power consumption of the device. When positive and negative voltages are applied to the array electrode of the embodiment, deflected light beams are obtained at the tail end of the electro-optical switch based on the lithium niobate waveguide, the light beams are output from the branch tail ends of the different waveguides due to the voltages with different polarities, and the deflection frequency of the light beams is changed due to the voltage frequency, so that the function of a high-speed optical switch is realized.
The technical scheme can also be that the manufacturing method of the electro-optical switch based on the lithium niobate waveguide is designed, firstly, a waveguide area and a non-waveguide area are planned on the surface of the lithium niobate, the waveguide area comprises an input end, a gradual change area and an output end, the area outside the waveguide area is the non-waveguide area, the lithium niobate is a blocky lithium niobate or lithium niobate thin film integrated waveguide, and the lithium niobate thin film integrated waveguide is the combination of single crystal lithium niobate and a silicon dioxide substrate; forming a silicon dioxide mask in the non-waveguide region; processing the blocky lithium niobate or lithium niobate thin film integrated waveguide by an annealing proton exchange method, and forming a proton exchange lithium niobate waveguide on the blocky lithium niobate or lithium niobate thin film integrated waveguide; then covering a silicon dioxide layer on the proton exchange lithium niobate waveguide, wherein the thickness of the silicon dioxide layer in the waveguide area is consistent with that of the silicon dioxide mask in the non-waveguide area, and a silicon dioxide buffer layer is formed; and finally, processing a group of gradual change array electrodes on the surface of the silicon dioxide buffer layer at the position facing the waveguide area by a microstructure electrode photoetching technology, wherein the gradual change array electrodes consist of microstructure electrode units in the shape of isosceles triangles.
Further, the manufacturing steps of the electro-optical switch based on the lithium niobate waveguide specifically comprise: s1, depositing a layer of negative photoresist on the surface of the blocky lithium niobate or the monocrystal lithium niobate, and placing symmetrically distributed chromium masks in non-waveguide areas corresponding to the negative photoresist, wherein the chromium masks avoid the waveguide areas when being placed; s2, removing the chromium mask of the non-waveguide area and the negative photoresist below the chromium mask after ultraviolet irradiation, and only leaving the negative photoresist of the waveguide area; s3, uniformly depositing a layer of silicon dioxide on the negative photoresist of the waveguide area; s4, stripping the negative photoresist of the waveguide region and the silicon dioxide layer on the negative photoresist, and forming a silicon dioxide mask in a non-waveguide region; s5, carrying out annealing proton exchange technology treatment on the lithium niobate in the gradual change region to generate a proton exchange lithium niobate waveguide; s6, depositing a layer of silicon dioxide on the proton exchange lithium niobate waveguide, and enabling the silicon dioxide layer and a silicon dioxide mask of the non-waveguide area to have the same thickness to form a silicon dioxide buffer layer together; and S7, finally, photoetching an isosceles triangle-shaped microstructure gradient array electrode unit on the silicon dioxide buffer layer through a microstructure electrode photoetching technology. The invention designs a multi-layer arrangement structure, and designs a gradual change array electrode formed by isosceles triangle-shaped microstructure electrode units on the surface, thereby fully utilizing the electro-optical characteristics of lithium niobate crystals. Furthermore, the silicon dioxide layer and the lithium niobate waveguide have high refractive index contrast, so that the optical loss can be reduced when the device is operated. The structure enables the electric field distribution of the transmission light field and the electrode to realize larger overlapping so as to excite higher electro-optic effect, thereby realizing local larger refractive index change, being beneficial to improving modulation efficiency and reducing driving voltage and power consumption of the device.
Further, the lithium niobate thin film integrated waveguide is formed by a lithium niobate thin film integration technique, which specifically includes: preparing a lithium niobate wafer, and implanting helium ions into the lithium niobate wafer; preparing a silicon dioxide substrate, bonding the lithium niobate wafer and the silicon dioxide substrate together, and heating the lithium niobate wafer and the silicon dioxide substrate; and the lithium niobate thin film which is fallen off after heating is remained on the surface of the silicon dioxide substrate, so that the lithium niobate thin film integrated waveguide is obtained. The lithium niobate thin film integrated waveguide obtained by the lithium niobate thin film integrated technology forms strong refractive index contrast in the longitudinal direction, and prevents the guided mode from leaking to the substrate. The waveguide overcomes the defect of small refractive index difference between the traditional lithium niobate waveguide and the substrate.
Further, the annealing proton exchange method specifically includes: benzoic acid is selected as a proton source; proton exchange is carried out with the blocky lithium niobate or the monocrystal lithium niobate, the exchange is completed under the environment with the temperature of 150-300 ℃ and the process lasts for 100 minutes; and (3) annealing the waveguide sheet obtained after the operation, and finishing the annealing in an environment with the temperature of 300-400 ℃ to obtain the proton exchange lithium niobate waveguide. The degree of the proton exchange depends on the reaction time and temperature, so that the experiment shows that the patent sets the temperature environment of 150-300 ℃ and the reaction time of 100 minutes; in order to improve the refractive index stability of the waveguide, reduce the loss of the waveguide and restore the electro-optic coefficient of the waveguide, the refractive index distribution of the waveguide is more in line with the requirements, and the optimum temperature of the annealing environment of the optical waveguide after proton exchange is 300-400 ℃ obtained through experiments; compared with the lithium niobate film with the same layer, the proton exchange waveguide processed by adopting the annealing proton exchange technology has high refractive index, causes refractive index difference in the transverse direction, has transverse weak refractive index contrast, has weaker transverse limitation on waveguide modes, and is beneficial to transverse deflection of the modes and realizes beam deflection.
Further, the height of the isosceles triangle is determined by the width of the gradual change region, the length of the gradual change region and the length of the bottom side of the isosceles triangle; the top view of the gradual change region is an isosceles trapezoid, and the width of the gradual change region corresponds to the upper bottom and the lower bottom of the isosceles trapezoid; the length of the gradual change region corresponds to the height of an isosceles trapezoid, and the specific calculation process is as follows: recording the isosceles trapezoid as a trapezoid OCBA, wherein two waists of the trapezoid OCBA are OC and AB, the OC is taken as an x-axis, the AB is positioned above the OC, and a vertex O is taken as an origin point, so that a two-dimensional coordinate system is established; length of line segment OA is d 1 Corresponding to the length of the upper bottom of the isosceles trapezoid, wherein the straight line is L 1 The method comprises the steps of carrying out a first treatment on the surface of the The length of the line segment CB is d 2 Corresponding to the length of the lower bottom of the isosceles trapezoid, and the straight line is L 2 The method comprises the steps of carrying out a first treatment on the surface of the The distance between the line segment OA and the line segment CB is d 3 The method comprises the steps of carrying out a first treatment on the surface of the The lengths of the line segment OC and the line segment AB correspond to the waist length of the isosceles trapezoid, and the straight line where AB is located is L 4 The bottom edge of the isosceles triangle is on a line segment OC, and the vertex corresponding to the bottom edge is on AB;
L 1 the linear equation of (2) is: y is 1 ＝k 1 *x，L 2 Is the slope k of the straight line of (2) 2 The method comprises the following steps: k (k) 2 ＝k 1 ；
The sitting mark at the point A is (x) A ,y A ) Calculate x A ＝-|d 1 *cos tan -1 k 1 |,y A ＝k 1 *x A ；
The sitting mark at the C point is (x) c 0), calculated to
The sitting mark at the point B is (x) B ,y B ) Calculate x B ＝x c -|d 2 *cos tan -1 k 2 |,y B ＝|d 2 *sin tan -1 k 2 |；
L 4 The linear equation is:
the coordinates corresponding to the midpoint of the bottom edge of the isosceles triangle are recorded as (X 1 ,0)，(X 2 ,0)，……(X n ,0)(n≥1)，X 1 Corresponding to the midpoint value of the bottom edge of the initial isosceles triangle, X n The value of (2) is the sum of the lengths of the bottom edges of the front n-1 isosceles triangles plus half of the length of the bottom edge of the nth isosceles triangle; finally, X is n Substituted into L 4 The y value obtained by the linear equation is the height of the corresponding isosceles triangle. A plurality of isosceles triangle microstructure electrode units with smaller areas form a gradual change array electrode, so that the beam deflection can be well realized.
Compared with the prior art, the invention has the beneficial effects that: the invention designs the X-cut, Y-cut or Z-cut lithium niobate planar waveguide with isosceles triangle microstructure gradient array electrode structure by adopting a manufacturing method combining a lithium niobate thin film integration technology, an annealing proton exchange technology and a microstructure electrode photoetching technology. The design provides a unique and effective method for realizing the miniaturization and low power consumption of the device, and can be manufactured into miniaturized integrated photoelectric devices.
Drawings
Fig. 1 is an overall configuration diagram of embodiment 1 of the present invention.
Fig. 2 is an overall structural diagram of embodiment 2 of the present invention.
Fig. 3 is a three-view of embodiment 1 of the present invention, in which fig. 3 (a), 3 (b), 3 (c), and 3 (d) are respectively a front view, a rear view, a side view, and a top view.
Fig. 4 is a three-view of embodiment 2 of the present invention, in which fig. 4 (a), 4 (b), 4 (c), and 4 (d) are respectively a front view, a rear view, a side view, and a top view.
FIG. 5 is a schematic representation of the operation of an embodiment of the present invention;
FIG. 6 is a schematic view of a partial manufacturing process according to embodiment 3 of the present invention;
FIG. 7 is a schematic view of a partial manufacturing process according to embodiment 4 of the present invention;
reference numerals illustrate: 100. a graded array electrode; 200. a silicon dioxide buffer layer; 300 lithium niobate; 400. a silicon dioxide substrate; 500. a target surface; 110. a microstructure electrode unit; 310. proton exchange lithium niobate waveguides; 3101. an input end; 3102. a gradual change region; 3103. an output end; 600. negative photoresist; 700. and (5) chromium mask.
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the invention. For better illustration of the following embodiments, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the actual product dimensions; it will be appreciated by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
Example 1
As shown in fig. 1, the embodiment is an electro-optical switch based on lithium niobate waveguide, and the structure of the electro-optical switch is three-layer arrangement, and the electro-optical switch sequentially comprises a gradual change array electrode 100, a buffer layer and blocky lithium niobate from top to bottom; proton exchange lithium niobate waveguide 310 is wrapped in the massive lithium niobate thin film, the proton exchange lithium niobate waveguide 310 forms a waveguide area, and the waveguide area is Y-shaped; the waveguide region comprises an input end 3101, a gradual change region 3102 and an output end 3103, and the region outside the waveguide region is a non-waveguide region; the gradient array electrode 100 is composed of isosceles triangle microstructure array electrode units 110 with regular variation of bottom edges, and the width of the array electrode 100 is smaller than that of the buffer layer; the minimum isosceles triangle of the microstructure electrode unit 110 has a base length of 9 μm, the remaining bases are increased in an arithmetic progression with a tolerance of 9 μm, the height of the isosceles triangle is determined by the width of the transition region, the length of the transition region and the length of the isosceles triangle base, the top view of the transition region 3102 is an isosceles trapezoid, one of the two sides of the isosceles trapezoid corresponds to the base of the isosceles triangle, and the other one of the two sides corresponds to the vertex corresponding to the base of the isosceles triangle; on one hand, the effective width of the lithium niobate waveguide can be fully utilized, on the other hand, unnecessary material or energy loss is avoided, and the utilization rate is improved. The array electrode 100 is formed by a plurality of isosceles triangle microstructure electrode units 110 with smaller area, plays a role similar to a prism array, fully utilizes the electro-optical characteristics of lithium niobate crystals, deflects light beams and generates different optical mode field distribution at the tail end of a waveguide. The buffer layer is made of silicon dioxide.
Calculating the height of an isosceles triangle by the width of the gradual change region, the length of the gradual change region and the length of the bottom edge of the isosceles triangle: recording the isosceles trapezoid as a trapezoid OCBA, wherein the OCBA is four vertexes of the trapezoid; two waists of the trapezoid OCBA are OC and AB, the OC is taken as an x-axis, the AB is positioned above the OC, and a vertex O is taken as an origin, so that a two-dimensional coordinate system is established; length of line segment OA is d 1 The length of the upper bottom corresponding to the isosceles trapezoid is L 1 The method comprises the steps of carrying out a first treatment on the surface of the The length of the line segment CB is d 2 The length of the bottom of the isosceles trapezoid is corresponding to the L-shaped straight line 2 The method comprises the steps of carrying out a first treatment on the surface of the The distance between the line segment OA and the line segment CB is d 3 The method comprises the steps of carrying out a first treatment on the surface of the The lengths of the line segment OC and the line segment AB correspond to the waist length of the isosceles trapezoid, and the straight line where AB is located is L 4 The bottom edge of the isosceles triangle is on a line segment OC, and the vertex corresponding to the bottom edge is on a line segment AB;
L 1 the linear equation of (2) is: y is 1 ＝k 1 *x，L 2 Is the slope k of the straight line of (2) 2 The method comprises the following steps: k (k) 2 ＝k 1 ；
The sitting mark at the point A is (x) A ,y A ) Calculate x A ＝-|d 1 *cos tan -1 k 1 |,y A ＝k 1 *x A ；
The sitting mark at the C point is (x) c 0), calculated to
The sitting mark at the point B is (x) B ,y B ) Calculate x B ＝x c -|d 2 *cos tan -1 k 2 |,y B ＝|d 2 *sin tan -1 k 2 |；
L 4 The linear equation is:the coordinates corresponding to the midpoints of the bases of the isosceles triangles are described as (X 1 ,0)，(X 2 ,0)，……(X n ,0)(n≥1)，X 1 Corresponding to the midpoint value of the bottom edge of the initial isosceles triangle, X n The value of (2) is the sum of the lengths of the bottom edges of the front n-1 isosceles triangles plus half of the length of the bottom edge of the nth isosceles triangle; finally, X is n Substituted into L 4 The y value obtained by the linear equation is the height of the corresponding isosceles triangle.
The embodiment adopts a hierarchical structure, so that each layer of material cannot play a corresponding role when being arranged too thin, if the material is arranged too thick, the conduction effect can be affected, the waveguide volume is too large, the loss is increased, the device is not suitable for miniaturized integrated photoelectric devices, and the thickness of each layer of material is properly set according to experimental results. Specifically, as shown in fig. 1, the embodiment is three-layer arrangement, and the three layers are a gradual change array electrode 100 (thickness of 0.15-8 μm), a buffer layer (thickness of 0.5-0.8 μm) and a block lithium niobate (thickness of 500-1000 μm) sequentially from top to bottom.
The proton exchange lithium niobate waveguide 310 includes an input end 3101, a transition region 3102, and an output end 3103. The width of the input end is 8 mu m, and the length is 5mm; the width of the gradual change region gradually changes from 8 mu m to 80 mu m, and the gradual change length is 15mm; the output ends are two branched single-mode waveguides, the initial width is 38.75 μm, the branched single-mode waveguides are symmetrical relative to the center of the gradual change region 3102, the tail ends of the branched single-mode waveguides are gradually changed to 10um, the gradual change length is 13.54mm, and the center-to-center distance between the two branched output tail ends is 135um.
The distance between the tip of the above-mentioned gradation array electrode and the ground electrode is kept at 3-8 μm, and may be set at 7 μm. By applying a voltage across the electrodes, the refractive index of the waveguide in the portion covered by the electrodes is changed, thereby changing the direction of propagation of the light beam. The silicon dioxide buffer layer 200 and the lithium niobate waveguide have high refractive index contrast, which can reduce optical loss when the waveguide is in operation. The structure enables the electric field distribution of the transmission light field and the electrode to realize larger overlapping so as to excite higher electro-optic effect, thereby realizing local larger refractive index change, being beneficial to improving modulation efficiency and reducing driving voltage and power consumption of the device.
As shown in fig. 5, in this embodiment, by designing the multi-layer arrangement structure and the design of the array electrode 100 formed by the isosceles triangle-shaped graded microstructure electrode units 110, the electric field distribution of the transmitted light field and the electrode is greatly overlapped, so as to excite a higher electro-optic effect, thereby realizing local larger refractive index change, being beneficial to improving the modulation efficiency and reducing the driving voltage and power consumption of the device. When positive and negative voltages are applied to the array electrode 100 of the present embodiment, the end of the electro-optical switch based on the lithium niobate waveguide is deflected, the voltages with different polarities cause the light beam to be output from the branch end of the different waveguide, and the voltage frequency causes the deflection frequency of the light beam to be changed, thereby realizing the function of the high-speed optical switch.
Example 2
As shown in fig. 2, the present embodiment is an electro-optical switch based on a lithium niobate waveguide, which has a structure that four layers are arranged, and is sequentially provided with a gradual change array electrode 100, a buffer layer and a lithium niobate thin film integrated waveguide from top to bottom, wherein the lithium niobate thin film integrated waveguide is a combination of single crystal lithium niobate and a substrate (400); proton exchange lithium niobate waveguide 310 is wrapped in the film of the monocrystal lithium niobate, and the waveguide area is Y-shaped; the waveguide region comprises an input end 3101, a gradual change region 3102 and an output end 3103, and the region outside the waveguide region is a non-waveguide region; the gradual change array electrode 100 consists of isosceles triangle microstructure array electrode units 110 with the bottom edges regularly changing, and the width of the array electrode 100 is smaller than that of the buffer layer; the minimum isosceles triangle of the microstructure electrode unit 110 has a base length of 9 μm, the remaining bases are increased in an arithmetic progression with a tolerance of 9 μm, the height of the isosceles triangle is determined by the width of the transition region 3102, the length of the transition region 3102 and the length of the isosceles triangle base, the vertex of the isosceles triangle is exactly on the waveguide edge of the transition region 3102, and the top view of the transition region 3102 is an isosceles trapezoid; on one hand, the effective width of the lithium niobate waveguide can be fully utilized, on the other hand, unnecessary material or energy loss is avoided, and the utilization rate is improved. The array electrode 100 is formed by a plurality of isosceles triangle microstructure electrode units 110 with smaller area, plays a role similar to a prism array, fully utilizes the electro-optical characteristics of lithium niobate crystals, deflects light beams and generates different optical mode field distribution at the tail end of a waveguide. The material used for the buffer layer and the substrate is silicon dioxide.
The relationship between the height of the isosceles triangle and the width of the transition region 3102, the length of the transition region 3102, and the length of the base of the isosceles triangle is specifically: recording the isosceles trapezoid as a trapezoid OCBA, wherein the OCBA is four vertexes of the trapezoid; two waists of the trapezoid OCBA are OC and AB, the OC is taken as an x-axis, the AB is positioned above the OC, and a vertex O is taken as an origin, so that a two-dimensional coordinate system is established; length of line segment OA is d 1 The length of the upper bottom corresponding to the isosceles trapezoid is L 1 The method comprises the steps of carrying out a first treatment on the surface of the The length of the line segment CB is d 2 The length of the bottom of the isosceles trapezoid is corresponding to the L-shaped straight line 2 The method comprises the steps of carrying out a first treatment on the surface of the The distance between the line segment OA and the line segment CB is d 3 The method comprises the steps of carrying out a first treatment on the surface of the The lengths of the line segment OC and the line segment AB correspond to the waist length of the isosceles trapezoid, and the straight line where AB is located is L 4 The bottom edge of the isosceles triangle is on a line segment OC, and the vertex corresponding to the bottom edge is on AB;
L 1 the linear equation of (2) is: y is 1 ＝k 1 *x，L 2 Is the slope k of the straight line of (2) 2 The method comprises the following steps: k (k) 2 ＝k 1 ；
The sitting mark at the point A is (x) A ,y A ) Calculate x A ＝-|d 1 *cos tan -1 k 1 |,y A ＝k 1 *x A ；
The sitting mark at the C point is (x) c 0), calculated to
The sitting mark at the point B is (x) B ,y B ) Calculate x B ＝x c -|d 2 *cos tan -1 k 2 |,y B ＝|d 2 *sin tan -1 k 2 |；
L 4 The linear equation is:
the coordinates corresponding to the midpoints of the bottom sides of the isosceles triangles are recorded as (X 1 ,0)，(X 2 ,0)，……(X n ,0)(n≥1)，X 1 Corresponding to the midpoint value of the bottom edge of the initial isosceles triangle, X n The value of (2) is the sum of the lengths of the bottom edges of the front n-1 isosceles triangles plus half of the length of the bottom edge of the nth isosceles triangle; finally, X is n Substituted into L 4 The y value obtained by the linear equation is the height of the corresponding isosceles triangle.
The embodiment adopts a hierarchical structure, so that each layer of material cannot play a corresponding role when being arranged too thin, if the material is arranged too thick, the conduction effect can be affected, the waveguide volume is too large, the loss is increased, the device is not suitable for miniaturized integrated photoelectric devices, and the thickness of each layer of material is properly set according to experimental results. Specifically, as shown in fig. 2, the structure of the present embodiment is four-layer arrangement, and the array electrode 100 (thickness of 0.15-10 μm), the silicon dioxide buffer layer 200 (thickness of 0.5-0.8 μm), the single crystal lithium niobate thin film thickness of 5-8 μm), and the silicon dioxide substrate 400 (thickness of 500-1000 μm) are sequentially arranged from top to bottom.
The proton exchange lithium niobate waveguide 310 is divided into an input end 3101, a transition region 3102, and an output end 3103. The width of the input end is 8 mu m, and the length is 5mm; the width of the transition region 3102 is changed from 8 μm to 80 μm, and the transition length is 15mm; the output end is two branched single-mode waveguides, the initial width is 38.75 μm, the two branched single-mode waveguides are symmetrical relative to the center of the gradual change area (3102), the tail end gradually changes to 10um, the gradual change length is 4mm, and the center-to-center distance between the two branched output tail ends is 135um.
The distance between the tip of the gradation array electrode 100 and the ground electrode is maintained to be 3-8 μm, and may be set to be 7 μm. By applying a voltage across the electrodes, the refractive index of the waveguide in the portion covered by the electrodes is changed, thereby changing the direction of propagation of the light beam. The silicon dioxide buffer layer 200, the lithium niobate waveguide and the silicon dioxide substrate 400 have high refractive index contrast, and can reduce optical loss when the waveguide works. The structure enables the electric field distribution of the transmission light field and the electrode to realize larger overlapping so as to excite higher electro-optic effect, thereby realizing local larger refractive index change, being beneficial to improving modulation efficiency and reducing driving voltage and power consumption of the device.
As shown in fig. 5, in this embodiment, by designing the multi-layer arrangement structure and the design of the array electrode 100 formed by the isosceles triangle-shaped graded microstructure electrode units 110, the electric field distribution of the transmitted light field and the electrode is greatly overlapped, so as to excite a higher electro-optic effect, thereby realizing local larger refractive index change, being beneficial to improving the modulation efficiency and reducing the driving voltage and power consumption of the device. When positive and negative voltages are applied to the array electrode 100 of the present embodiment, the end of the electro-optical switch based on the lithium niobate waveguide is deflected, the voltages with different polarities cause the light beam to be output from the branch end of the different waveguide, and the voltage frequency causes the deflection frequency of the light beam to be changed, thereby realizing the function of the high-speed optical switch.
Example 3
As shown in fig. 6, the embodiment is a method for manufacturing an electro-optical switch based on a lithium niobate waveguide, which includes the steps of:
s1, in FIG. 6 (a), a layer of negative photoresist 600 is deposited on the surface of a block of lithium niobate, a waveguide area and a non-waveguide area are planned on the surface of the block of lithium niobate, symmetrically distributed chromium masks 700 are placed on the non-waveguide area corresponding to the negative photoresist 600, and a waveguide area which is not covered by the chromium masks 700 is reserved, wherein the waveguide area comprises an input end 3101, a gradual change area 3102 and an output end 3103.
S2, after ultraviolet irradiation, removing the chromium mask 700 of the non-waveguide area and the negative photoresist 600 below the chromium mask, and only leaving the negative photoresist 600 of the waveguide area;
s3, uniformly depositing a layer of silicon dioxide on the negative photoresist 600 of the waveguide area;
s4, stripping the negative photoresist 600 of the waveguide region and silicon dioxide on the negative photoresist to form a silicon dioxide mask in a non-waveguide region;
s5, carrying out annealing proton exchange technology (APE) treatment on the lithium niobate 300 in the gradual change region to generate a proton exchange lithium niobate waveguide 310, wherein the proton exchange lithium niobate waveguide 310 obtained by adopting the annealing proton exchange technology (APE) treatment has higher refractive index than a lithium niobate film of the same layer, causes a refractive index difference in the transverse direction, has a transverse weak refractive index contrast, has weaker transverse limitation on a waveguide mode, and is beneficial to transverse deflection of the mode, so that light beam deflection is realized; the annealing proton exchange technology (APE) comprises the following specific steps: firstly, determining a proton source used as proton exchange, wherein the benzoic acid has stable chemical property and low toxicity in an exchange temperature range, and does not damage the lithium niobate 300 and does not corrode most metals when the proton exchange is performed, so that the benzoic acid is used as the proton source of the proton exchange to perform the proton exchange; secondly, proton exchange is completed in an environment with the temperature of 150-300 ℃, the exchange environment needs to be sealed (molten benzoic acid is easy to volatilize and has strong pungent smell, so that the sealing is needed), and the process lasts for 100 minutes; finally, the exchanged waveguide sheet is annealed, and the proton exchange between Li+ and H+ is carried out under the environment with the temperature of 300-400 ℃, wherein the exchange degree depends on the reaction time and the reaction temperature, so that the experiment shows that the temperature environment with the temperature of 150-400 ℃ and the reaction time of 100 minutes are set, the Li+ and H+ exchange process can be represented by the ionic reaction formula of LiNbO3+xH+ & gtHxLi 1-xNbO3+xLi+, and the value of X in the reaction formula reflects the degree of proton exchange.
S6, as shown in FIG. 6 (c), a layer of silicon dioxide is deposited on the proton exchange lithium niobate waveguide 310, and the silicon dioxide mask have the same thickness, so as to jointly form a silicon dioxide buffer layer 200;
s7, as shown in FIG. 6 (d), the isosceles triangle-shaped microstructure gradient array electrode unit 110 is photoetched on the silicon dioxide buffer layer 200 by the microstructure electrode photoetching technology to form the gradient array electrode 100. The top view of the transition area 3102 is an isosceles trapezoid, and the relationship between the height of the isosceles triangle and the width of the transition area, the length of the transition area, and the length of the bottom edge of the isosceles triangle is specifically: recording the isosceles trapezoid as a trapezoid OCBA, wherein the OCBA is four vertexes of the trapezoid; two waists of the trapezoid OCBA are OC and AB, the OC is taken as an x-axis, the AB is positioned above the OC, and a vertex O is taken as an origin, so that a two-dimensional coordinate system is established; length of line segment OA is d 1 Corresponding to the length of the upper bottom of the isosceles trapezoid, wherein the straight line is L 1 The method comprises the steps of carrying out a first treatment on the surface of the The length of the line segment CB is d 2 Corresponding to the length of the lower bottom of the isosceles trapezoid, and the straight line is L 2 The method comprises the steps of carrying out a first treatment on the surface of the The distance between the line segment OA and the line segment CB is d 3 The method comprises the steps of carrying out a first treatment on the surface of the The lengths of the line segment OC and the line segment AB correspond to the waist length of the isosceles trapezoid, and the straight line where AB is located is L 4 The bottom edge of the isosceles triangle is on a line segment OC, and the vertex corresponding to the bottom edge is on AB;
L 1 the linear equation of (2) is: y is 1 ＝k 1 *x，L 2 Is the slope k of the straight line of (2) 2 The method comprises the following steps: k (k) 2 ＝k 1 ；
The sitting mark at the point A is (x) A ,y A ) Calculate x A ＝-|d 1 *cos tan -1 k 1 |,y A ＝k 1 *x A ；
The sitting mark at the C point is (x) c 0), calculated to
The sitting mark at the point B is (x) B ,y B ) Calculate x B ＝x c -|d 2 *cos tan -1 k 2 |,y B ＝|d 2 *sin tan -1 k 2 |；
L 4 The linear equation is:
the coordinates corresponding to the midpoint of the bottom edge of the isosceles triangle are recorded as (X 1 ,0)，(X 2 ,0)，……(X n ,0)(n≥1)，X 1 Corresponding to the midpoint value of the bottom edge of the initial isosceles triangle, X n The value of (2) is the sum of the lengths of the bottom edges of the front n-1 isosceles triangles plus half of the length of the bottom edge of the nth isosceles triangle; finally, X is n Substituted into L 4 The y value obtained by the linear equation is the height of the corresponding isosceles triangle.
In summary, the invention designs the X-cut, Y-cut or Z-cut lithium niobate planar waveguide with isosceles triangle-shaped microstructure gradient array electrode structure by adopting a manufacturing method combining an annealing proton exchange technology (APE) and a microstructure electrode photoetching technology. The graded array electrode can perform the function of an optical switch when beam deflection is modulated at high speed by an electro-optic effect. Compared with a common electro-optical switch, the electro-optical switch has the advantages of reducing driving voltage, reducing switch crosstalk, realizing high contrast, modulating high-speed bandwidth and the like, can be manufactured into a miniaturized integrated photoelectric device, and provides a brand new solution for the rapid development requirement of an optical network.
Example 4
As shown in fig. 7, the embodiment is a method for manufacturing an electro-optical switch based on a lithium niobate waveguide, which includes the steps of:
s1, FIG. 7 (a) is lithium niobate, and a lithium niobate thin film integrated waveguide is obtained by adopting a lithium niobate thin film integration technique (LNOI), wherein the lithium niobate thin film integrated waveguide is the combination of single crystal lithium niobate and a silicon dioxide substrate 400; the lithium niobate thin film integrated waveguide obtained by the lithium niobate thin film integrated technology (LNOI) forms a strong refractive index contrast in the longitudinal direction, and prevents the leakage of the guide film to the substrate. The waveguide overcomes the defect of small refractive index difference between the traditional lithium niobate waveguide and the substrate; the lithium niobate thin film integration technique (LNOI) specifically includes: preparing a lithium niobate wafer 300, and implanting helium ions into the lithium niobate wafer; preparing a silicon dioxide substrate 400, bonding the lithium niobate wafer and the silicon dioxide substrate 400 together, heating the lithium niobate wafer and the silicon dioxide substrate 400, changing helium ions into helium gas after heating and expanding the volume, and as a result, breaking the whole injection layer, and stopping the fallen lithium niobate thin film on the surface of the silicon dioxide substrate 400 to obtain a lithium niobate thin film integrated waveguide as shown in fig. 7 (b);
S2, depositing a layer of negative photoresist 600 on the single crystal lithium niobate thin film, wherein the thickness of the negative photoresist is about 1 mu m; a waveguide area and a non-waveguide area are planned on the surface of a monocrystal lithium niobate film, symmetrically distributed chromium masks 700 are placed on the non-waveguide area of negative photoresist, a waveguide area which is not covered by the chromium masks is reserved in the middle, and the waveguide area comprises an input end 3101, a gradual change area 3102 and an output end 3103;
s3, after ultraviolet irradiation, removing the chromium mask 700 of the non-waveguide area and the negative photoresist 600 below the chromium mask, and only leaving the negative photoresist 600 of the waveguide area reserved by the intermediate uncovered mask;
s4, uniformly depositing a layer of silicon dioxide 200 on the negative photoresist 600 of the waveguide area;
s5, stripping the negative photoresist 600 of the waveguide region and silicon dioxide on the negative photoresist to obtain a silicon dioxide layer distributed in a non-waveguide region;
s6, carrying out annealing proton exchange technology (APE) treatment on the waveguide to generate a proton exchange lithium niobate waveguide 310, wherein the steps specifically comprise: firstly, determining a proton source used as proton exchange, wherein the benzoic acid has stable chemical property and low toxicity in an exchange temperature range, and does not damage the lithium niobate 300 and does not corrode most metals when the proton exchange is performed, so that the benzoic acid is used as the proton source of the proton exchange to perform the proton exchange; secondly, proton exchange is completed in an environment with the temperature of 150-300 ℃, the exchange environment needs to be sealed (molten benzoic acid is easy to volatilize and has strong pungent smell, so that the sealing is needed), and the process lasts for 100 minutes; finally, annealing the waveguide sheet obtained after the above operation, and performing the annealing at the temperature of 300-400 ℃, wherein the heating process should be as fast as possible, and the annealing temperature should be kept as constant as possible, so as to finally generate the proton exchange lithium niobate waveguide 310, and the proton exchange lithium niobate waveguide 310 forms the waveguide region.
S7, as shown in FIG. 7 (c), a layer of silicon dioxide is deposited on the proton exchange lithium niobate waveguide 310, and the silicon dioxide buffer layer 200 is formed by making the silicon dioxide layer have the same thickness as the silicon dioxide layer deposited in the step S4.
S8, as shown in FIG. 7 (d), the isosceles triangle-shaped microstructure gradient electrode unit 110 is photoetched on the silicon dioxide buffer layer 200 by the microstructure electrode photoetching technology to form a gradient array electrode 100. The top view of the gradual change region is an isosceles trapezoid, and the relation between the height of the isosceles triangle and the width of the gradual change region, the length of the gradual change region and the length of the bottom edge of the isosceles triangle is specifically: recording the isosceles trapezoid as a trapezoid OCBA, wherein the OCBA is four vertexes of the trapezoid; two waists of the trapezoid OCBA are OC and AB, the OC is taken as an x-axis, the AB is positioned above the OC, and a vertex O is taken as an origin, so that a two-dimensional coordinate system is established; length of line segment OA is d 1 Corresponding to the length of the upper bottom of the isosceles trapezoid, wherein the straight line is L 1 The method comprises the steps of carrying out a first treatment on the surface of the The length of the line segment CB is d 2 Corresponding to the length of the lower bottom of the isosceles trapezoid, and the straight line is L 2 The method comprises the steps of carrying out a first treatment on the surface of the The distance between the line segment OA and the line segment CB is d 3 The method comprises the steps of carrying out a first treatment on the surface of the The lengths of the line segment OC and the line segment AB correspond to the waist length of the isosceles trapezoid, and the straight line where AB is located is L 4 The bottom edge of the isosceles triangle is on a line segment OC, and the vertex corresponding to the bottom edge is on AB;
L 1 the linear equation of (2) is: y is 1 ＝k 1 *x，L 2 Is the slope k of the straight line of (2) 2 The method comprises the following steps: k (k) 2 ＝k 1 ；
The sitting mark at the point A is (x) A ,y A ) Calculate x A ＝-|d 1 *cos tan -1 k 1 |,y A ＝k 1 *x A ；
The sitting mark at the C point is (x) c 0), calculated to
The sitting mark at the point B is (x) B ,y B ) Calculate x B ＝x c -|d 2 *cos tan -1 k 2 |,y B ＝|d 2 *sin tan -1 k 2 |；
L 4 The linear equation is:
the coordinates corresponding to the midpoint of the bottom edge of the isosceles triangle are recorded as (X 1 ,0)，(X 2 ,0)，……(X n ,0)(n≥1)，X 1 Corresponding to the midpoint value of the bottom edge of the initial isosceles triangle, X n The value of (2) is the sum of the lengths of the bottom edges of the front n-1 isosceles triangles plus half of the length of the bottom edge of the nth isosceles triangle; finally, X is n Substituted into L 4 The y value obtained by the linear equation is the height of the corresponding isosceles triangle.
In summary, the invention designs the X-cut, Y-cut or Z-cut lithium niobate planar waveguide with isosceles triangle-shaped microstructure gradient array electrode structure by adopting a manufacturing method combining lithium niobate thin film integration technology (LNOI), annealing proton exchange technology (APE) and microstructure electrode lithography technology. The design provides a unique and effective method for realizing the miniaturization and low power consumption of the device, and can be manufactured into miniaturized integrated photoelectric devices.
It should be understood that the foregoing examples of the present invention are merely illustrative of the present invention and are not intended to limit the present invention to the specific embodiments thereof. Any modification, equivalent replacement, improvement, etc. that comes within the spirit and principle of the claims of the present invention should be included in the protection scope of the claims of the present invention.

Claims (10)

1. An electro-optical switch based on lithium niobate waveguide is characterized in that the structure from top to bottom of the electro-optical switch is as follows: a graded array electrode (100), a buffer layer and a substrate; the gradual change array electrode is an isosceles triangle microstructure array electrode unit with a group of bottom edges regularly changing; the substrate is a blocky lithium niobate or lithium niobate thin film integrated waveguide, the lithium niobate thin film integrated waveguide is formed by combining monocrystalline lithium niobate with a substrate, and proton exchange lithium niobate waveguides are wrapped in the blocky lithium niobate or the monocrystalline lithium niobate; the proton exchange lithium niobate waveguide forms a waveguide area, the waveguide area is Y-shaped, the waveguide area comprises an input end (3101), a gradual change area (3102) and an output end (3103), the output end (3103) is two branch single-mode waveguides, the branch single-mode waveguides are symmetrical relative to the center of the gradual change area (3102), and the area outside the waveguide area is a non-waveguide area.
2. The electro-optical switch based on lithium niobate waveguide according to claim 1, characterized in that said set of isosceles triangle microstructure array electrode units (110) with regularly varying base sides, in particular the base sides of said isosceles triangles are arranged on the same line, and no gap exists between the base sides of the preceding isosceles triangle and the base side of the following isosceles triangle; the length of the bottom edge of the isosceles triangle is increased in an arithmetic sequence, and the tolerance of the arithmetic sequence is the length of the bottom edge of the minimum isosceles triangle.
3. A lithium niobate waveguide based electro-optical switch according to claim 2, characterized in that the transition region (3102) is arranged directly under the transition array electrode (100); the top view of the gradual change region (3102) is an isosceles trapezoid, one of the two sides of the isosceles trapezoid corresponds to the bottom side of the isosceles triangle, and the other one of the two sides corresponds to the vertex corresponding to the bottom side of the isosceles triangle.
4. A lithium niobate waveguide-based electro-optical switch according to claim 3, wherein the height of the isosceles triangle is determined by the width of the transition region, the length of the transition region and the length of the base of the isosceles triangle; the width of the gradual change region corresponds to the upper bottom and the lower bottom of the isosceles trapezoid; the length of the gradual change region corresponds to the height of an isosceles trapezoid.
5. The lithium niobate waveguide-based electro-optical switch according to claim 4, wherein the relation between the height of the isosceles triangle and the width of the transition region (3102), the length of the base of the isosceles triangle is: recording the isosceles trapezoid as an isosceles trapezoid OCBA, wherein the OCBA is four vertexes of the isosceles trapezoid; two waists of the isosceles trapezoid OCBA are OC and AB, the OC is taken as an x-axis, the AB is positioned above the OC, and a vertex O is taken as an origin, so that a two-dimensional coordinate system is established; length of line segment OA is d 1 Corresponding to the length of the upper bottom of the isosceles trapezoid, wherein the straight line is L 1 The method comprises the steps of carrying out a first treatment on the surface of the The length of the line segment CB is d 2 Corresponding to the length of the lower bottom of the isosceles trapezoid, and the straight line is L 2 The method comprises the steps of carrying out a first treatment on the surface of the The distance between the line segment OA and the line segment vB is d 3 The method comprises the steps of carrying out a first treatment on the surface of the The lengths of the line segment OC and the line segment AB correspond to the waist length of the isosceles trapezoid, and the straight line where AB is located is L 4 The bottom edge of the isosceles triangle is on a line segment OC, and the vertex corresponding to the bottom edge is on AB;
L 1 the linear equation of (2) is: y is 1 ＝k 1 *x，L 2 Is the slope k of the straight line of (2) 2 The method comprises the following steps: k (k) 2 ＝k 1 ；
The sitting mark at the point A is (x) A ,y A ) Calculate x A ＝-|d 1 *cos tan -1 k 1 |,y A ＝k 1 *x A ；
The sitting mark at the C point is (x) c 0), calculated to
The sitting mark at the point B is (x) B ,y B ) Calculate x B ＝x c -|d 2 *cos tan -1 k 2 |,y B ＝|d 2 *sin tan -1 k 2 |；
L 4 The linear equation is:
the coordinates corresponding to the midpoint of the bottom edge of the isosceles triangle are recorded as (X 1 ,0)，(X 2 ,0)，……(X n 0), wherein n.gtoreq.1, X 1 Corresponding to the midpoint value of the bottom edge of the initial isosceles triangle, X n The value of (2) is the sum of the lengths of the bottom edges of the front n-1 isosceles triangles plus half of the length of the bottom edge of the nth isosceles triangle; finally, X is n Substituted into L 4 The y value obtained by the linear equation is the height of the corresponding isosceles triangle.
6. A method for manufacturing an electro-optical switch based on a lithium niobate waveguide according to any of claims 1 to 5, characterized in that firstly, a waveguide area and a non-waveguide area are planned on the surface of lithium niobate (300), the waveguide area comprises an input end (3101), a gradual change area (3102) and an output end (3103), the area outside the waveguide area is the non-waveguide area, the lithium niobate (300) is a bulk lithium niobate or lithium niobate thin film integrated waveguide, and the lithium niobate thin film integrated waveguide is a combination of single crystal lithium niobate and a silicon dioxide substrate (400); forming a silicon dioxide mask in the non-waveguide region; processing the blocky lithium niobate or lithium niobate thin film integrated waveguide by an annealing proton exchange method, and forming a proton exchange lithium niobate waveguide on the blocky lithium niobate or lithium niobate thin film integrated waveguide; then covering a silicon dioxide layer on the proton exchange lithium niobate waveguide, wherein the thickness of the silicon dioxide layer in the waveguide area is consistent with that of the silicon dioxide mask in the non-waveguide area, and a silicon dioxide buffer layer (200) is formed; and finally, processing a group of gradual change array electrodes (100) on the surface of the silicon dioxide buffer layer (200) at positions facing the waveguide area through a microstructure electrode photoetching technology, wherein the gradual change array electrodes consist of microstructure electrode units (110) with isosceles triangle shapes.
7. The method for manufacturing an electro-optical switch based on a lithium niobate waveguide according to claim 6, wherein the steps of the method for manufacturing an electro-optical switch based on a lithium niobate waveguide specifically include:
s1, depositing a layer of negative photoresist (600) on the surface of the blocky lithium niobate or the monocrystal lithium niobate, and placing symmetrically distributed chromium masks in non-waveguide areas corresponding to the negative photoresist (600), wherein the chromium masks avoid the waveguide areas when being placed;
s2, after ultraviolet irradiation, removing the chromium mask of the non-waveguide area and the negative photoresist (600) below the chromium mask, and only leaving the negative photoresist (600) of the waveguide area;
s3, uniformly depositing a layer of silicon dioxide on the negative photoresist (600) of the waveguide area;
s4, stripping the negative photoresist (600) of the waveguide region and the silicon dioxide layer on the negative photoresist to form a silicon dioxide mask in a non-waveguide region;
s5, processing the lithium niobate (300) in the gradual change region by an annealing proton exchange method to generate a proton exchange lithium niobate waveguide;
s6, depositing a layer of silicon dioxide on the proton exchange lithium niobate waveguide, and enabling the silicon dioxide layer and a silicon dioxide mask of the non-waveguide area to have the same thickness to form a silicon dioxide buffer layer (200) together;
And S7, finally, photoetching the isosceles triangle-shaped microstructure gradient array electrode unit (110) on the silicon dioxide buffer layer (200) through a microstructure electrode photoetching technology.
8. The method for manufacturing an electro-optical switch based on a lithium niobate thin film waveguide according to claim 6, wherein the lithium niobate thin film integrated waveguide is formed by a lithium niobate thin film integration technique, the lithium niobate thin film integration technique specifically comprising: preparing a lithium niobate wafer, and implanting helium ions into the lithium niobate wafer; preparing a silicon dioxide substrate (400), bonding the lithium niobate wafer and the silicon dioxide substrate (400), and heating the lithium niobate wafer and the silicon dioxide substrate (400); and the lithium niobate thin film (300) which is fallen off after heating is remained on the surface of the silicon dioxide substrate (400) to obtain the lithium niobate thin film integrated waveguide.
9. The method for manufacturing an electro-optical switch based on a lithium niobate waveguide according to claim 7, wherein the annealing proton exchange method specifically comprises: benzoic acid is selected as a proton source; proton exchange is carried out with the blocky lithium niobate or the monocrystal lithium niobate, the exchange is completed under the environment with the temperature of 150-300 ℃ and the process lasts for 100 minutes; and then annealing the obtained waveguide sheet, and finishing the annealing in the environment with the temperature of 300-400 ℃ to obtain the proton exchange lithium niobate waveguide.
10. Method of manufacturing an electro-optical switch based on lithium niobate waveguides according to any of claims 6 to 9, characterized in that the height of the isosceles triangle is determined by the width of the transition region (3102), the length of the transition region (3102) and the length of the base of the isosceles triangle; the top view of the gradual change region (3102) is an isosceles trapezoid, and the width of the gradual change region (3102) corresponds to the upper bottom and the lower bottom of the isosceles trapezoid; the length of the gradual change region (3102) corresponds to the height of an isosceles trapezoid, and the specific calculation process is as follows:
recording the isosceles trapezoid as a trapezoid OCBA, wherein two waists of the trapezoid OCBA are OC and AB, the OC is taken as an x-axis, the AB is positioned above the OC, and a vertex O is taken as an origin point, so that a two-dimensional coordinate system is established; length of line segment OA is d 1 Corresponds to theThe length of the upper bottom of the isosceles trapezoid is L 1 The method comprises the steps of carrying out a first treatment on the surface of the The length of the line segment CB is d 2 Corresponding to the length of the lower bottom of the isosceles trapezoid, and the straight line is L 2 The method comprises the steps of carrying out a first treatment on the surface of the The distance between the line segment OA and the line segment CB is d 3 The method comprises the steps of carrying out a first treatment on the surface of the The lengths of the line segment OC and the line segment AB correspond to the waist length of the isosceles trapezoid, and the straight line where AB is located is L 4 The bottom edge of the isosceles triangle is on a line segment OC, and the vertex corresponding to the bottom edge is on AB;
L 1 the linear equation of (2) is: y is 1 ＝k 1 *x，L 2 Is the slope k of the straight line of (2) 2 The method comprises the following steps: k (k) 2 ＝k 1 ；
The sitting mark at the point A is (x) A ,y A ) Calculate x A ＝-|d 1 *costan -1 k 1 |,y A ＝k 1 *x A ；
The sitting mark at the C point is (x) c 0), calculated to
The sitting mark at the point B is (x) B ,y B ) Calculate x B ＝x c -|d 2 *costan -1 k 2 |,y B ＝|d 2 *sintan -1 k 2 |；
L 4 The linear equation is:
the coordinates corresponding to the midpoint of the bottom edge of the isosceles triangle are recorded as (X 1 ,0)，(X 2 ,0)，……(X n 0), wherein n.gtoreq.1, X 1 Corresponding to the midpoint value of the bottom edge of the initial isosceles triangle, X n The value of (2) is the sum of the lengths of the bottom edges of the front n-1 isosceles triangles plus half of the length of the bottom edge of the nth isosceles triangle; finally, X is n Substituted into L 4 The y value obtained by the linear equation is the height of the corresponding isosceles triangle.
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