CN111999954A - Optical device based on super-surface-electric dimming material and preparation method thereof - Google Patents
Optical device based on super-surface-electric dimming material and preparation method thereof Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 144
- 230000003287 optical effect Effects 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000003792 electrolyte Substances 0.000 claims abstract description 32
- 238000003860 storage Methods 0.000 claims abstract description 29
- 238000004040 coloring Methods 0.000 claims abstract description 10
- 238000005562 fading Methods 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 294
- 150000002500 ions Chemical class 0.000 claims description 28
- 238000001228 spectrum Methods 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 15
- 238000005516 engineering process Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 9
- 239000002305 electric material Substances 0.000 claims description 8
- 239000012780 transparent material Substances 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 6
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- -1 polyethylene terephthalate Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 239000002346 layers by function Substances 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 claims description 3
- 229920000058 polyacrylate Polymers 0.000 claims description 3
- 229920000867 polyelectrolyte Polymers 0.000 claims description 3
- 229940005642 polystyrene sulfonic acid Drugs 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 2
- 230000001427 coherent effect Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000003086 colorant Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 14
- 239000000382 optic material Substances 0.000 description 14
- 238000009826 distribution Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 238000001914 filtration Methods 0.000 description 7
- 239000002086 nanomaterial Substances 0.000 description 5
- 229920002799 BoPET Polymers 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012237 artificial material Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/1506—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect caused by electrodeposition, e.g. electrolytic deposition of an inorganic material on or close to an electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
- G02F1/1516—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising organic material
- G02F1/15165—Polymers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
- G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/155—Electrodes
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/157—Structural association of cells with optical devices, e.g. reflectors or illuminating devices
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The optical device based on the super-surface-electric dimming material comprises an electric dimming material layer and a nano-grating layer, and has the characteristics of a reflective filter by utilizing the coherent cancellation or coherent constructive performance when light irradiates the waveguide nano-grating layer; the reflection type filter characteristics of the nanometer grating layer are controlled to be opened or closed by utilizing the difference of the refractive indexes of the coloring state and the fading state of the light modulation material layer. The invention relates to a preparation method of an optical device based on a super-surface-electric dimming material, which comprises the following steps: a) preparing an upper electrode layer; b) preparing a grating layer; c) preparing a layer of electrically tunable material; d) preparing an electrolyte layer; e) preparing an ion storage layer; f) preparing a lower electrode layer and a lower substrate. The optical device not only can be used as a monochromatic filter with pure colors and applied to an optical display system, an optical anti-counterfeiting or integrated optical system, but also can utilize the color development function of the electric dimming material layer, thereby being beneficial to being used as an anti-counterfeiting display screen.
Description
Technical Field
The invention relates to an optical device and a preparation method thereof, in particular to an optical device based on a super-surface-electric dimming material and a preparation method thereof.
Background
In conventional optical devices, manipulation of light waves is achieved by light propagating through a medium of a given refractive index, and variations in amplitude, phase and polarization are accumulated by propagation through the medium, resulting in devices that are bulky and not easily integrated. The object of miniaturization and integration of modern industry promotes the birth and development of micro-nano optics. The explosive development of super surfaces in recent years has provided a means to overcome the above limitations. The super surface is an ultrathin artificial material and is formed by a micro-nano structure array with sub-wavelength size. Research shows that in the sub-wavelength size, light and the micro-nano structure act to generate a surface plasmon resonance phenomenon, and the resonance wavelength is accompanied with a phase mutation. By regulating and controlling the geometric shape and parameters of the micro-nano unit structure, the optical response of transmitted or reflected light can be accurately controlled, and a new door is opened for the research of the control of optical propagation. However, in general, the nanostructures constituting the super-surface, once prepared, have a single function, which lacks flexibility of active control and greatly limits their use in practice. The future integrated optoelectronic devices need more adjustable, light and easy-to-integrate optical devices, and how to combine the super-surface with a tunable intelligent material to create an optoelectronic device capable of efficiently, timely and flexibly and actively modulating electromagnetic waves is a hot problem of research of scientists in various countries all the time.
Electrochromic is a special phenomenon in which the reflectance and absorptance of an electro-optic material are reversibly changed between a colored state of low transmittance and a decolored state of high transmittance by injecting or extracting charges (ions or electrons) under the action of an alternating high-low or positive-negative external electric field, and is expressed as reversible changes in color and transmittance in appearance performance. Has the excellent properties of high response speed, continuous tunability, low power consumption, open-circuit memory characteristic and the like. Here, we calculate the refractive index curve of the material in the visible light band by using an envelope interpolation method according to the transmittance parameter of the electrical dimming material, and find that when the electrical dimming material has a color change characteristic, the refractive index of the electrical dimming material changes, that is, the dielectric property of the electrical dimming material changes. It is well known that when the dielectric properties of the environment surrounding the nanostructure change, its resonant frequency shifts. By utilizing the characteristic, a flexible tunable reflective filter based on the super-surface-electric dimming material is designed by combining the super-surface structure with the electric dimming material. The device we designed is characterized by: 1) different from a component of a pure electric dimming material structure, the device utilizes the property that the refractive index of the device can be regulated and controlled by voltage, and is combined with a super surface consisting of metal nano structures to dynamically regulate and control incident visible light in real time; 2) the device is easier to realize in theory and experiment (no structure is needed to be made on the electric dimming material), and meanwhile, the device has operability of voltage regulation and control.
Disclosure of Invention
In order to overcome the defects of the technical problems, the invention provides an optical device based on a super-surface-electric dimming material and a preparation method thereof.
The invention discloses an optical device based on a super-surface-electric dimming material, which is characterized in that: the waveguide nanometer grating light source comprises an electric dimming material layer and a nanometer grating layer, wherein the nanometer grating layer is arranged on one side of the electric dimming material layer, and obtains different narrow-band reflection peaks in a reflection spectrum by setting different grating periods in the nanometer grating layer through utilizing coherence cancellation or coherence constructive performance when light irradiates the waveguide nanometer grating layer, so that the nanometer grating layer has the characteristic of a reflective filter; the reflection type filter characteristics of the nanometer grating layer are controlled to be opened or closed by utilizing the difference of the refractive indexes of the coloring state and the fading state of the light modulation material layer.
The optical device based on the super-surface-electric dimming material is an electrogenerated color development screen and comprises a lower electrode layer, an ion storage layer, an electrolyte layer and an upper electrode layer, wherein the upper electrode layer is arranged adjacent to the nano grating layer, the electric dimming material layer is positioned between the electrolyte layer and the upper electrode layer, the ion storage layer is arranged adjacent to the electrolyte layer, and the lower electrode layer is arranged adjacent to the ion storage layer.
The optical device based on the super-surface-electric dimming material comprises a lower substrate and an upper substrate, wherein the lower substrate is arranged on the outer surface of a lower electrode layer, and the upper substrate is arranged on the outer surface of an upper electrode layer; the lower electrode layer, the upper electrode layer, the lower substrate and the upper substrate are all made of transparent materials.
The optical device based on the super-surface-electric dimming material comprises an upper electrode layer, a lower electrode layer, a nano grating layer and a super-surface-electric dimming material layer, wherein the upper electrode layer and the lower electrode layer are made of semiconductor materials such as Indium Tin Oxide (ITO), zinc oxide (ZnO), silver silk ink, single-layer graphene and n-type gallium nitride (n-GaN), the electric dimming material layer is made of polyelectrolyte materials such as polystyrene sulfonic acid, grating ridges in the nano grating layer are formed simultaneously and same as the materials of the upper electrode layer, and grating slits in the nano grating layer are formed simultaneously and same as the electric dimming materials.
The optical device based on the super-surface-electric dimming material is characterized in that the electrolyte layer is made of a material such as polyacrylate and has a thickness of 40-60 mu m, the ion storage layer is made of a material such as lithium fluoride and has a thickness of 1-2 mu m; the lower substrate and the upper substrate are made of transparent materials such as polyethylene terephthalate (PET), Polydimethylsiloxane (PDMS) and Polyimide (PI), and the thickness of the transparent materials is 2-175 mu m; the thickness of the upper electrode layer and the lower electrode layer is 30-100 nm, and the thickness of the electric light modulation material layer is 1-3 mu m.
In the optical device based on the super-surface-electric dimming material, the grating period P of the nano-grating layer is as follows: p = 200-500 nm, the duty ratio is preferably 0.5, the thickness is 20-500 nm, the thickness is preferably 140-160 nm, and the grating period and the duty ratio of the nano grating layer are selected according to the wavelength of light to be reflected.
The invention discloses a preparation method of an optical device based on a super-surface-electric dimming material, which is characterized by comprising the following steps of:
a) preparing an upper electrode layer, preparing a conductive upper electrode layer on an upper substrate;
b) preparing a grating layer, namely preparing a nano grating array structure with the grating period and the duty ratio meeting the requirements on the upper electrode layer to form grating ridges of the nano grating layer;
c) preparing an electric dimming material layer, preparing a layer of electric dimming material on the nano grating layer to form the electric dimming material layer, wherein the part of the electric dimming material embedded between grating ridges forms a grating slit, and the grating ridges and the grating slit together form the nano grating layer;
d) preparing an electrolyte layer, and arranging an electrolyte on the electric dimming material layer to form the electrolyte layer;
e) preparing an ion storage layer, and arranging the ion storage layer on the electrolyte layer;
f) preparing a lower electrode layer and a lower substrate, disposing the lower electrode layer on the ion storage layer, and disposing the lower substrate on the lower electrode layer.
In the step b), in the preparation process of the nano-grating layer, a functional medium layer is formed on an upper electrode layer by adopting a magnetron sputtering coating technology, or a medium functional layer is formed on an upper substrate by adopting an MOCVD technology; then, a patterned photoresist mask is formed on the medium function layer, the medium function layer is etched by adopting an inductive coupling plasma etching technology, a periodic nano grating array structure is processed to form a medium super surface, and grating ridges are formed at the positions which are not etched.
In the preparation process of the electric dimming material layer in the step c), the electric dimming material layer is prepared on the dielectric super surface by adopting a printing process, so that the electric dimming material layer uniformly covers the dielectric super surface and is contacted with the upper electrode layer, and then the electric dimming material layer is baked at the temperature of 80 ℃ for 60min to be solidified.
In the preparation method of the optical device based on the super-surface-electric dimming material, in the step d), an electrolyte layer is prepared on an electric dimming material layer by adopting a printing or blade coating process, and in the step e), an ion storage layer is prepared on the electrolyte layer by adopting the printing or blade coating process; in the step f), a lower electrode layer is formed on the lower substrate by adopting an optical coating technology or a magnetron sputtering coating technology, and then the lower substrate is fixed in a way that the lower electrode layer is attached to the ion storage layer, so that the optical device with adjustable narrow-band reflection peak in the reflection spectrum is formed.
The invention has the beneficial effects that: the optical device combines the nano grating and the electric dimming material layer together, utilizes the waveguide propagation and diffraction generated by irradiating light to the waveguide nano grating by light and the coherence cancellation or coherence growth of diffracted light waves and reflected light to enable a narrow-band reflection peak to appear in a reflection spectrum, and can obtain a monochromatic reflection spectrum of a required waveband by changing the grating period and the grating duty ratio so as to enable the reflection spectrum to have the performance of an optical filter; meanwhile, the refractive index of the electric dimming material layer is changed by controlling the coloring and fading of the electric dimming material layer, so that whether a narrow-band reflection peak appears in a reflection spectrum of the nano grating is controlled, namely, the 'opening' and 'closing' of the nano grating are realized.
Drawings
FIG. 1 is a schematic structural diagram of an optical device based on a super-surface-electric tunable material according to the present invention;
FIG. 2 is a graph showing the reflectance change of the reflection spectrum of an optical device in a state where the electric material layer of the electro-optic device is discolored and colored, when the grating period is 420nm and the duty ratio is 0.5, according to the present invention;
FIG. 3 is a cross-sectional energy distribution diagram of an optical device in a discolored state of an electro-optic material layer when a grating period is 420nm and a duty ratio is 0.5 according to the present invention;
FIG. 4 is a cross-sectional energy distribution diagram of an optical device in the color state of an electrically tunable material layer when the grating period is 420nm and the duty ratio is 0.5 according to the present invention;
FIG. 5 is a graph showing the reflectance change of the reflection spectrum of an optical device in a state where the electric material layer of the electro-optic device is discolored and colored, when the grating period is 320nm and the duty ratio is 0.5, according to the present invention;
FIG. 6 is a cross-sectional energy distribution diagram of an optical device in a discolored state of an electro-optic material layer when a grating period is 320nm and a duty ratio is 0.5 according to the present invention;
FIG. 7 is a cross-sectional energy distribution diagram of an optical device in the color state of an electro-optic material layer when the grating period is 320nm and the duty ratio is 0.5 according to the present invention;
FIG. 8 is a graph showing the reflectance change of the reflection spectrum of an optical device in a state where the electric material layer of the electro-optic device is discolored and colored, when the grating period is 220nm and the duty ratio is 0.5, according to the present invention;
FIG. 9 is a cross-sectional energy distribution diagram of an optical device in a discolored state of an electro-optic material layer when a grating period is 220nm and a duty ratio is 0.5 according to the present invention;
FIG. 10 is a cross-sectional energy distribution diagram of an optical device in the color state of an electro-optic material layer when the grating period is 220nm and the duty ratio is 0.5 according to the present invention;
FIG. 11 shows the refractive indexes of the electrically tunable material PEDOT obtained by ellipsometry, PSS in the oxidized state (-1.5V) and the reduced state (+ 2.5V);
FIG. 12 shows the extinction coefficients of the electro-tunable material PEDOT: PSS in the oxidized state (-1.5V) and the reduced state (+ 2.5V) measured by an ellipsometer.
In the figure: the structure comprises a 1-electric-dimming material layer, a 2-nanometer grating layer, a 3-lower substrate, a 4-lower electrode layer, a 5-ion storage layer, a 6-electrolyte layer, a 7-upper electrode layer, an 8-upper substrate, a 9-grating ridge and a 10-grating slit.
Detailed Description
The invention is further described with reference to the following figures and examples.
The optical device based on the super-surface-electric dimming material comprises a core structure and a nano-grating layer 2, wherein the nano-grating layer 2 is arranged on one side of the electric dimming material layer 1, the nano-grating layer 2 comprises grating ridges 9 and grating slits 10 which are arranged at intervals, the nano-grating layer 2 and the electric dimming material layer 1 (and other layers) form a waveguide medium grating structure, when external light irradiates on the nano-grating layer 2, the light wave acts with the grating again in the process of propagating in the waveguide, and secondary diffraction is generated to be coupled and emitted out from the waveguide along the directions of transmission and reflection light beams. This secondary diffracted light wave coherently cancels or coherently adds to the transmitted or reflected light, resulting in narrow-band transmission valleys in the transmission spectrum and narrow-band reflection peaks in the reflection spectrum. The electric dimming material refers to a material whose optical properties (such as energy band width, color, dielectric constant, refractive index, etc.) can be reversibly changed by an electric field, and includes an electrochromic material.
The coherent cancellation or the coherent growth of the reflection light by the nano-grating layer 2 is utilized, so that a narrow-band reflection peak appears in a reflection spectrum, and a required reflection spectrum band, namely monochromatic light with pure colors, can be obtained, so that the optical device can be used as a filter. Meanwhile, different monochromatic reflection lights can be obtained by changing the grating period and the duty ratio of the nano-grating layer 2.
The refractive indexes of the electric dimming material layer 1 in the fading and coloring states are different, and the reflection filtering performance of the nano-grating layer 2 is turned on or turned off by using the different refractive indexes in the fading and coloring states. If the nano-grating layer 2 and the electrically-tunable material layer 1 (and the rest layers) form a structure meeting the requirements of the waveguide medium grating under the fading state of the electrically-tunable material layer 1, the formed optical device has the filtering characteristic and can reflect monochromatic light; when the electrically tunable material layer 1 is in a color-developing state, due to the change of the refractive index, the structure formed by the nano-grating layer 2 and the electrically tunable material layer 1 (and the rest layers) does not meet the requirement of the waveguide dielectric grating, and thus the electrically tunable material layer 1 does not have a filtering characteristic, and most light rays are absorbed or projected by the colored electrically tunable material layer 1.
As shown in fig. 1, a schematic structural diagram of an optical device based on a super-surface-electric dimming material of the present invention is shown, which is composed of a lower substrate 3, a lower electrode layer 4, an ion storage layer 5, an electrolyte layer 6, an electric dimming material layer 1, a nano-grating layer 2, an upper electrode layer 7, and an upper substrate 8 from bottom to top in sequence, wherein the lower substrate 3, the upper substrate 8, the lower electrode layer 4, and the upper electrode layer 7 are all made of a light-transmitting material, the upper electrode layer 7 and the lower electrode layer 4 can be made of a semiconductor material such as indium tin oxide ITO, zinc oxide ZnO, silver silk ink, single-layer graphene, n-type gallium nitride n-GaN, the electric dimming material layer 1 can be made of a polyelectrolyte material such as polystyrene sulfonic acid, the grating ridges 9 in the nano-grating layer 2 are made of the same material as the upper electrode layer 7 and are made of the same material and are formed at the same time, the grating ridges 9 can be formed by etching, thus, the portions of the upper electrode layer 7 that are not etched form grating ridges 9, and the portions of the electro-optically modulating material embedded between adjacent grating ridges 9 form grating slits 10.
The electrolyte layer 6 is made of a material such as polyacrylate and has a thickness of 40-60 μm, and the ion storage layer 5 is made of a material such as lithium fluoride and has a thickness of 1-2 μm; the lower substrate 3 and the upper substrate 8 are made of transparent materials such as polyethylene terephthalate (PET), Polydimethylsiloxane (PDMS) and Polyimide (PI), and the thickness of the transparent materials is 2-175 mu m; the thickness of the upper electrode layer 7 and the lower electrode layer 4 is 30-100 nm, and the thickness of the electric light modulation material layer 1 is 1-3 μm. The grating period P of the nano-grating layer 2 is: p = 200-500 nm, the duty ratio is preferably 0.5, the thickness is 20-500 nm, the thickness is preferably 140-160 nm, and the grating period and the duty ratio of the nano grating layer are selected according to the wavelength of light to be reflected.
The invention discloses a preparation method of an optical device based on a super-surface-electric dimming material, which is characterized by comprising the following steps of:
a) preparing an upper electrode layer, preparing a conductive upper electrode layer (7) on an upper substrate (8);
in this step, a commercially available conductive substrate ITO-PET film may also be used, the PET film forming an upper base, the ITO forming the upper electrode layer 7;
b) preparing a grating layer, namely preparing a nano grating array structure with the grating period and the duty ratio meeting the requirements on the upper electrode layer (7) to form a grating ridge (9) of the nano grating layer (2);
in the step, in the preparation process of the nano grating layer, a functional medium layer is formed on an upper electrode layer (7) by adopting a magnetron sputtering coating technology, or a medium functional layer is formed on an upper substrate (8) by adopting an MOCVD technology; then, a patterned photoresist mask is formed on the medium function layer, the medium function layer is etched by adopting an inductive coupling plasma etching technology, a periodic nano grating array structure is processed to form a medium super surface, and grating ridges are formed at the positions which are not etched.
c) Preparing an electric dimming material layer, preparing a layer of electric dimming material on the nano grating layer to form the electric dimming material layer (1), embedding the electric dimming material between grating ridges to form grating slits (10), and forming the nano grating layer (2) by the grating ridges and the grating slits together;
in the step, in the preparation process of the electric dimming material layer, the electric dimming material layer is prepared on the dielectric super surface by adopting a printing process, so that the electric dimming material layer uniformly covers the dielectric super surface and is contacted with the upper electrode layer (7), and then the electric dimming material layer is baked at the temperature of 80 ℃ for 60min to be solidified.
d) Preparing an electrolyte layer, and arranging an electrolyte on the electric dimming material layer (1) to form an electrolyte layer (6);
in the step, an electrolyte layer (6) can be prepared on the electric dimming material layer (1) by adopting a printing or blade coating process;
e) preparing an ion storage layer, providing an ion storage layer (5) on the electrolyte layer (6);
in the step, an ion storage layer (5) is prepared on an electrolyte layer (6) by adopting a printing or blade coating process;
f) preparing a lower electrode layer and a lower substrate, disposing the lower electrode layer (4) on the ion storage layer (5), and disposing the lower substrate (3) on the lower electrode layer (4).
In the step, a lower electrode layer (4) is formed on a lower substrate (3) by adopting an optical coating technology or a magnetron sputtering coating technology, and then the lower substrate (3) is fixed in a way that the lower electrode layer is attached to an ion storage layer (5), so that the optical device with adjustable narrow-band reflection peaks in reflection spectra is formed. A commercially available conductive substrate ITO-PET film may also be used, the PET film forming the lower base 3 and the ITO forming the lower electrode layer 4.
According to the above process steps, an optical device having a thickness of 125 μm, 100nm, 1 μm, 80 μm, 2 μm, 150nm, 100nm, 125 μm for the lower substrate 3, the lower electrode layer 4, the ion storage layer 5, the electrolyte layer 6, the upper electrode layer 7, and the upper substrate 8 is prepared, and refractive indices of materials used for the lower substrate 3, the lower electrode layer 4, the ion storage layer 5, the electrolyte layer 6, the upper electrode layer 7, and the upper substrate 8 are 1.65, 1.86, 1.3915, 1.695, 1.86, and 1.65, respectively. The refractive index of the electrically tunable material layer 1 in a discolored state (i.e., a transparent state) is 1.47, and the refractive index of the electrically tunable material layer 1 in a colored state is 2.06. The duty ratio of the nano-grating in the nano-grating layer 2 is 0.5, that is, the widths of the grating ridge 9 and the grating slit 10 are equal. Optical devices with grating periods of 420nm, 320nm and 220nm in 3 were manufactured and tested, respectively.
As shown in fig. 2, a reflectivity change diagram of a reflection spectrum of an optical device in a fading state and a coloring state of an electric adjusting material layer when a grating period is 420nm and a duty ratio is 0.5 is given, and it can be seen that when the electric adjusting material layer 1 is in the fading state, a narrow-band peak appears in the reflection spectrum between 670nm and 680nm, which indicates that the device has a good monochromatic filtering characteristic; when the electric-adjusting material layer 1 is in a coloring state, the narrow-band wave crest in the reflection spectrum disappears, because the refractive index of the electric-adjusting material layer 1 is increased, the device does not have the characteristic of a waveguide grating any more, and the light is absorbed by the electric-adjusting material layer 1, so that the electric-adjusting material layer 1 has a function of closing the filtering characteristic of the device when being colored. As shown in fig. 3, which shows the energy distribution of the cross section in the discolored state of the electro-tunable material layer, it can be seen that the energy is larger above the grating slit 10, indicating that there is a light emission, i.e. a narrow-band peak in the reflection spectrum. As shown in fig. 4, an energy distribution diagram of a cross section of the electro-optic tunable material layer in a colored state is shown, and it can be seen that the energy at the positions of the nano-grating layer 2 and the electro-optic tunable material layer 1 is very high, which indicates that most of light rays are absorbed by the electro-optic tunable material layer 1 and almost no light rays are reflected.
As shown in fig. 5, a reflectivity change diagram of a reflection spectrum of an optical device in a state where an electrical dimming material layer is discolored and colored when a grating period is 320nm and a duty ratio is 0.5 is given, it can be seen that when the electrical dimming material layer 1 is in a transparent state (discolored), a narrow-band peak of the reflection spectrum appears between 560 nm to 570nm, when the electrical dimming material layer 1 is colored, the narrow-band peak disappears, and the filtering function of the visible electrical dimming material layer 1 can be turned off as it is colored. As shown in fig. 6 and 7, energy distribution diagrams of cross sections of the optical device in the discolored and colored state of the electro-optic material layer are shown, it can be seen that, when the electro-optic material layer 1 is discolored, a higher energy light ray is emitted, and after coloring, most of incident light is absorbed by the electro-optic material layer 1.
As shown in fig. 8, a reflectivity change diagram of the reflection spectrum of the optical device in a state where the electrical dimming material layer is discolored and colored when the grating period is 220nm and the duty ratio is 0.5 is given, it can be seen that when the electrical dimming material layer 1 is in a transparent state (discolored), two narrow band peaks of the reflection spectrum appear, a larger narrow band peak appears at about 500nm, when the electrical dimming material layer 1 is colored, the narrow band peak disappears, and the visible electrical dimming material layer 1 is colored and still can be "turned off" in its filtering function. As shown in fig. 9 and 10, energy distribution diagrams of cross sections of the optical device in the discolored and colored state of the electro-optic material layer are shown, it can be seen that, when the electro-optic material layer 1 is discolored, a higher-energy light ray is emitted, and after coloring, most of incident light is absorbed by the electro-optic material layer 1.
As shown in fig. 11 and fig. 12, the refractive index and extinction coefficient of the electro-optic material layer 1 in the oxidized state (-1.5V) and the reduced state (+ 2.5V) are respectively shown, and it can be seen that the electro-optic material layer 1 made of PEDOT: PSS has a refractive index in the reduced state greater than that in the oxidized state and an extinction coefficient in the reduced state greater than that in the oxidized state for light with the same wavelength, so that the device color can be observed in the oxidized state, and the device color (usually dark color) can be observed in the reduced state and the device color can not be observed in the "off" state for a certain color (specific wavelength).
Claims (10)
1. An optical device based on super surface-electric dimming material, which is characterized in that: the waveguide nanometer grating light source comprises an electric dimming material layer (1) and a nanometer grating layer (2), wherein the nanometer grating layer is arranged on one side of the electric dimming material layer, and obtains different narrow-band reflection peaks in a reflection spectrum by setting different grating periods in the nanometer grating layer through utilizing coherence cancellation or coherence growth performance when light irradiates the waveguide nanometer grating layer, so that the nanometer grating layer has the characteristic of a reflective filter; the reflection type filter characteristics of the nanometer grating layer are controlled to be opened or closed by utilizing the difference of the refractive indexes of the coloring state and the fading state of the light modulation material layer.
2. The super-surface-electric material photonic-based optical device according to claim 1, wherein: the optical device is an electrochromic screen and comprises a lower electrode layer (4), an ion storage layer (5), an electrolyte layer (6) and an upper electrode layer (7), wherein the upper electrode layer is arranged adjacent to the nano grating layer (2), the electric dimming material layer is arranged between the electrolyte layer and the upper electrode layer (7), the ion storage layer is arranged adjacent to the electrolyte layer, and the lower electrode layer (4) is arranged adjacent to the ion storage layer.
3. The super-surface-electric material photonic-based optical device according to claim 2, wherein: the electrode comprises a lower substrate (3) and an upper substrate (8), wherein the lower substrate is arranged on the outer surface of a lower electrode layer (4), and the upper substrate is arranged on the outer surface of an upper electrode layer (7); the lower electrode layer (4), the upper electrode layer (7), the lower substrate (3) and the upper substrate (8) are all made of transparent materials.
4. The super-surface-electric material photonic-based optical device according to claim 2, wherein: the upper electrode layer (7) and the lower electrode layer (4) are made of semiconductor materials such as Indium Tin Oxide (ITO), zinc oxide (ZnO), silver silk ink, single-layer graphene and n-type gallium nitride (n-GaN), the electric dimming material layer (1) is made of polyelectrolyte materials such as polystyrene sulfonic acid, grating ridges (9) in the nano grating layer (2) are formed by the same material as that of the upper electrode layer at the same time, and grating slits (10) in the nano grating layer are formed by the same material as that of the electric dimming material at the same time.
5. The super-surface-electric material photonic-based optical device according to claim 3, wherein: the electrolyte layer (6) is made of a material such as polyacrylate and has a thickness of 40-60 mu m, and the ion storage layer (5) is made of a material such as lithium fluoride and has a thickness of 1-2 mu m; the lower substrate (3) and the upper substrate (8) are made of transparent materials such as polyethylene terephthalate (PET), Polydimethylsiloxane (PDMS) and Polyimide (PI), and the thickness of the transparent materials is 2-175 mu m; the thickness of the upper electrode layer (7) and the lower electrode layer (4) is 30-100 nm, and the thickness of the electric light modulation material layer (1) is 1-3 mu m.
6. The super-surface-electric material photonic-based optical device according to claim 2 or 3, wherein: the grating period P of the nano grating layer (2) is as follows: p = 200-500 nm, the duty ratio is preferably 0.5, the thickness is 20-500 nm, the thickness is preferably 140-160 nm, and the grating period and the duty ratio of the nano grating layer are selected according to the wavelength of light to be reflected.
7. A method for preparing the optical device based on the super-surface-electric dimming material according to claim 3, which is implemented by the following steps:
a) preparing an upper electrode layer, preparing a conductive upper electrode layer (7) on an upper substrate (8);
b) preparing a grating layer, namely preparing a nano grating array structure with the grating period and the duty ratio meeting the requirements on the upper electrode layer (7) to form a grating ridge (9) of the nano grating layer (2);
c) preparing an electric dimming material layer, preparing a layer of electric dimming material on the nano grating layer to form the electric dimming material layer (1), embedding the electric dimming material between grating ridges to form grating slits (10), and forming the nano grating layer (2) by the grating ridges and the grating slits together;
d) preparing an electrolyte layer, and arranging an electrolyte on the electric dimming material layer (1) to form an electrolyte layer (6);
e) preparing an ion storage layer, providing an ion storage layer (5) on the electrolyte layer (6);
f) preparing a lower electrode layer and a lower substrate, disposing the lower electrode layer (4) on the ion storage layer (5), and disposing the lower substrate (3) on the lower electrode layer (4).
8. The method for preparing an optical device based on a super surface-electric dimming material according to claim 7, wherein: in the step b), in the preparation process of the nano-grating layer, a functional medium layer is formed on the upper electrode layer (7) by adopting a magnetron sputtering coating technology, or a medium functional layer is formed on the upper substrate (8) by adopting an MOCVD technology; then, a patterned photoresist mask is formed on the medium function layer, the medium function layer is etched by adopting an inductive coupling plasma etching technology, a periodic nano grating array structure is processed to form a medium super surface, and grating ridges are formed at the positions which are not etched.
9. The method for preparing an optical device based on a super surface-electric dimming material according to claim 8, wherein: in the preparation process of the electric-dimming material layer in the step c), the electric-dimming material layer is prepared on the dielectric super-surface by adopting a printing process, so that the electric-dimming material layer uniformly covers the dielectric super-surface and is in contact with the upper electrode layer (7), and then the electric-dimming material layer is baked for 60min at the temperature of 80 ℃ to be solidified.
10. The method for preparing an optical device based on a super surface-electric dimming material according to claim 7, wherein: in the step d), preparing an electrolyte layer (6) on the electric-dimming material layer (1) by adopting a printing or blade coating process, and in the step e), preparing an ion storage layer (5) on the electrolyte layer (6) by adopting the printing or blade coating process; in the step f), a lower electrode layer (4) is formed on the lower substrate (3) by adopting an optical coating technology or a magnetron sputtering coating technology, and then the lower substrate (3) is fixed in a manner that the lower electrode layer is attached to the ion storage layer (5), so that the optical device with adjustable narrow-band reflection peaks in the reflection spectrum is formed.
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