CN111996508A - Preparation method of amorphous silicon photoelectric layer film based on photoelectric tweezers equipment - Google Patents

Preparation method of amorphous silicon photoelectric layer film based on photoelectric tweezers equipment Download PDF

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CN111996508A
CN111996508A CN202010881471.3A CN202010881471A CN111996508A CN 111996508 A CN111996508 A CN 111996508A CN 202010881471 A CN202010881471 A CN 202010881471A CN 111996508 A CN111996508 A CN 111996508A
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amorphous silicon
photoelectric
sputtering
preparing
layer film
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冯林
曹宇擎
陈迪晓
梁树璋
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Suzhou Black Star Technology Co ltd
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Abstract

The invention discloses a preparation method of an amorphous silicon photoelectric layer film based on photoelectric tweezers, which improves the binding force between an amorphous silicon photoelectric layer and a substrate through ultrasonic cleaning and plasma treatment on an ITO substrate; the film prepared by magnetron sputtering has high surface uniformity; and finally, nitrogen protection annealing treatment is carried out, so that the defects of the photoelectric layer are effectively reduced, the residual stress of the film is eliminated, and a protective layer is formed on the surface to avoid oxidation in use. The preparation method of the photoelectric layer film simplifies the process flow, improves the film quality, improves the control safety and reduces the cost, so that the photoelectric tweezers system containing the photoelectric layer chip can be popularized and applied to tests such as actual cell tests in a large scale, and has strong industrialization prospect.

Description

Preparation method of amorphous silicon photoelectric layer film based on photoelectric tweezers equipment
Technical Field
The invention relates to the technical field of optical field control, in particular to a preparation method of an amorphous silicon photoelectric layer film based on photoelectric tweezers.
Background
In the related technology, the photoelectric operation technology based on the high-performance photoelectric material as the substrate is a unique high-precision technology at home and abroad at present, and the optical tweezers technology obtains the Nobel prize in 2018. There are currently some companies that have developed more sophisticated optical tweezers systems, such as Thorlab, Inc. in the United states, Lumicks m-Trap, Inc. in the Netherlands, and some enterprises in Si Guo. However, the current photoelectric operation technology still has limitation in the following aspects: 1. it is difficult to capture objects near or smaller than the wavelength of light; 2. opaque objects cannot be captured; 3. high NA objective lenses are required; 4. thermal effects produced by the laser; 5. it is difficult to capture for sub-millimeter volume particles. The main reason is that the optical tweezers capture through the momentum characteristic and the optical pressure characteristic of light, so that the light provides a capture force only in the order of magnitude of a piconewton (pN), and a high-power objective lens is necessary for realizing the focusing and capturing of light beams, and a large amount of joule heat is brought by high-intensity focusing and high laser power; in addition, the wavelength of light is such that the light has a diffraction limit and must act on a transparent substance. Based on the method, the photoelectric tweezers technology is developed.
The photoelectric tweezers are a novel manipulation technology combining the optical tweezers and dielectrophoresis, based on the principle of dielectrophoresis manipulation, the traditional physical electrodes are replaced by the optical electrodes, the projection equipment is used for projecting optical patterns on the photoconductive layer to form dynamic optical virtual electrodes, the non-uniform electric field is further induced to realize the manipulation of micro-nano objects, and a large number of micro objects such as cells, viruses, macromolecules and other particles are flexibly manipulated through the variable optical patterns. The cost is reduced by the optical control system of the photoelectric tweezers, the original limitation is broken through, and the application range is widened. The photoelectric control system has a great industrial application prospect. However, the photoelectric response efficiency of the common photoelectric material is low, the performance is low, the requirement of ultrahigh precision photoelectric operation cannot be met, and particularly, the photoelectric layer material for photoelectric operation is special in proportion and complex in processing process flow. The preparation process of each material on the photoelectric layer film of the photoelectric tweezers core is not further optimized, and the photoelectric layer of the photoelectric tweezers device cannot achieve lower cost and more universal process conditions depending on the preparation process of the solar cell film and the semiconductor material. And the currently prepared photoelectric layer does not reach the sensitivity of the product level. Meanwhile, in order to combine the photoelectric tweezers technology with other micro-nano control technologies such as microfluid and the like, the conventional photoelectric layer preparation technology cannot meet the corresponding processing requirements.
The absorption coefficient of the amorphous silicon material is almost one order of magnitude larger than that of crystalline silicon in the whole visible light range, and the intrinsic absorption coefficient of the amorphous silicon material is as high as 105 cm-1The forbidden band width of the amorphous silicon is about 1.7 eV, so that the amorphous silicon solar cell has better response to low light intensity, and experiments prove that the generated energy of the amorphous silicon thin film cell is 10-30% more than that of a crystalline silicon cell with the same nominal value. The amorphous silicon is a basic material of a silicon-based thin film solar cell and is mainly characterized in that: the film has the advantages of large light absorption coefficient, high refractive index (3.0-4.0) and good thermal performance, so when the film is used for a solar cell, the thickness of the required film is only about 1% of that of crystalline silicon. The amorphous silicon thin film solar cell has many advantages, especially good low-light performance and low temperature coefficient, so that the amorphous silicon thin film solar cell becomes a potential thin film photovoltaic device.
Disclosure of Invention
The invention provides a preparation method of an amorphous silicon photoelectric layer film based on photoelectric tweezers, which effectively solves the shortage of the existing preparation process of the photoelectric layer film based on the photoelectric tweezers.
The technical scheme provided by the invention is as follows:
a preparation method of an amorphous silicon photoelectric layer film based on photoelectric tweezers equipment comprises the following steps:
s1, carrying out ultrasonic cleaning on the ITO, and carrying out surface plasma treatment;
s2 preparing an amorphous silicon layer (a-Si) on the ITO by magnetron sputtering;
s3 preparing a zinc oxide layer (ZnO) on the amorphous silicon layer by magnetron sputtering;
s4, under the protection of nitrogen, the amorphous silicon film is post-annealed, so that a nitride protective film is formed on the surface.
Further preferably, in step S1, the ITO surface is Plasma-treated using a Plasma cleaning technique.
More preferably, the power for surface treatment of ITO in step S1 is 90W, and the treatment time is 25S.
Further preferably, in step S2, amorphous silicon is sputtered onto the ITO substrate surface using a magnetron sputtering technique.
Further preferably, in the sputtering of amorphous silicon in step S2, the sputtering power is 150W, the sputtering time is 120min, and the substrate temperature is 308.15K.
Further preferably, in step S3, zinc oxide is sputtered onto the amorphous silicon surface using a magnetron sputtering technique.
Further preferably, in the sputtering of zinc oxide in step S3, the sputtering power is 120W, the sputtering time is 30min, and the substrate temperature is 308.15K.
More preferably, the thickness of the amorphous silicon is 1500nm and the thickness of the zinc oxide is 50 nm.
Further preferably, in step S4, the prepared amorphous silicon thin film is annealed using a muffle furnace.
Further preferably, in the annealing treatment of the thin film in step S4, the annealing temperature is 573.15K, and the annealing time is 30 min.
The invention has the beneficial effects that: according to the preparation method of the amorphous silicon photoelectric layer film based on the photoelectric tweezers, disclosed by the invention, the bonding force of amorphous silicon and ITO is improved through plasma treatment on the substrate chip, the problem of large-area preparation to fall off is avoided, the cost and time of the process are effectively reduced through the sputtering control process, the residual stress in the film deposition process can be eliminated through annealing post-treatment, the performance and the quality of the film are improved, and the photoelectric conversion efficiency is further improved.
Drawings
FIG. 1 is a schematic flow chart of a method for preparing an amorphous silicon photoelectric layer film based on a photoelectric tweezers device in the present invention;
FIG. 2 is a schematic diagram of a film structure of a photovoltaic layer according to the present invention;
FIG. 3 is an XRD diffraction pattern of the amorphous silicon thin film prepared by the amorphous silicon photoelectric layer thin film preparation method based on the photoelectric tweezers device.
Detailed Description
For the purpose of enhancing the understanding of the present invention, the present invention will be described in further detail with reference to the accompanying drawings and examples, which are provided for the purpose of illustration only and are not intended to limit the scope of the present invention.
Example (b):
as shown in fig. 1, the flow of the method for preparing an amorphous silicon photoelectric layer thin film based on a photoelectric tweezers device provided in the present invention is shown, and the method for preparing the amorphous silicon photoelectric layer thin film based on the photoelectric tweezers device comprises: s1, ultrasonically cleaning the ITO, and carrying out plasma treatment on the surface; s2, preparing an amorphous silicon layer (a-Si) on the ITO by magnetron sputtering; s3, preparing a zinc oxide layer (ZnO) on the amorphous silicon layer through magnetron sputtering; and S4, carrying out post-annealing treatment on the amorphous silicon film under the protection of nitrogen to form a nitride protective film on the surface.
In step S1-4, as shown in fig. 2, an amorphous silicon layer 20 is formed on the substrate 10 by sputtering, and a zinc oxide layer 30 is formed on the amorphous silicon layer by sputtering.
In a specific implementation process, the substrate 10 is made of transparent conductive glass ITO, and the conductive glass is washed with absolute ethyl alcohol and deionized water in an ultrasonic cleaning instrument for 15 min. And (3) putting the cleaned conductive glass into a Plasma instrument to carry out ion bombardment treatment on the surface of the conductive glass, wherein the working power is 90w, and the treatment time is 25 s.
And placing the conductive glass substrate with the well-treated surface into a sputtering instrument cavity, sputtering amorphous silicon by adopting a magnetron sputtering method, and depositing the amorphous silicon on the conductive glass. In the process of sputtering amorphous silicon: setting magnetron sputtering instrument to use single crystal silicon target (purity 99.999% and conductivity 0.02 ohm cm), using Ar with purity 99.99% as sputtering gas, background vacuum 6.0x10-4Pa, argon flow of 20 sccm and substrate temperature of 507.15K; the sputtering power is 160W, and the time is 2 h.
Thereafter, a zinc oxide layer is further sputtered on the amorphous silicon layer, and during the sputtering of the zinc oxide: setting magnetron sputtering instrument to oxidize zinc target (purity 99.99%), using Ar with purity 99.99% as sputtering gas, backgroundThe null is 6.0x10-4Pa, argon flow of 20 sccm and substrate temperature of 507.15K; the sputtering power is 120W, and the time is 30 min.
And finally, annealing the amorphous silicon photoelectric layer film obtained by sputtering, selecting a muffle furnace and annealing in a nitrogen protection environment, wherein the annealing temperature is set to 373.15K in the annealing process, and the annealing time is about 30 min.
The thickness of the amorphous silicon prepared based on the method flow is 1500nm, and the thickness of the zinc oxide is 50 nm.
As shown in fig. 3, the prepared amorphous silicon film based on the photoelectric tweezers system is subjected to X-ray diffraction, and the crystal form of the film is verified to be amorphous, wherein the crystal peak value appearing in the figure is the crystal form of the conductive glass ITO.
The above embodiments should not limit the present invention in any way, and all technical solutions obtained by using equivalent alternatives or equivalent transformations fall within the protection scope of the present invention.

Claims (10)

1. A preparation method of an amorphous silicon photoelectric layer film based on photoelectric tweezers equipment is characterized by comprising the following steps:
s1: carrying out ultrasonic cleaning on the ITO, and carrying out plasma treatment on the surface;
s2: preparing an amorphous silicon layer (a-Si) on the ITO by magnetron sputtering;
s3: preparing a zinc oxide layer (ZnO) on the amorphous silicon layer by magnetron sputtering;
s4: and carrying out post-annealing treatment on the amorphous silicon film under the protection of nitrogen to form a nitride protective film on the surface.
2. The method for preparing an amorphous silicon photoelectric layer film based on a photoelectric tweezers device according to claim 1, wherein in step S1, Plasma processing is performed on the ITO surface using a Plasma cleaning technique.
3. The method for preparing an amorphous silicon photoelectric layer film based on a photoelectric tweezers device according to claim 2, wherein the power for processing the ITO surface in step S1 is 90W, and the processing time is 25S.
4. The method for preparing an amorphous silicon photoelectric layer film based on an optoelectronic tweezers device as claimed in claim 1, wherein in step S2, the amorphous silicon is sputtered onto the ITO substrate surface by magnetron sputtering technique.
5. The method of claim 4, wherein in the step S2 of sputtering amorphous silicon, the sputtering power is 150W, the sputtering time is 120min, and the substrate temperature is 308.15K.
6. The method for preparing an amorphous silicon photoelectric layer film based on a photoelectric tweezers device according to claim 1, wherein in step S3, zinc oxide is sputtered onto the surface of the amorphous silicon by using a magnetron sputtering technique.
7. The method of claim 6, wherein in the step S3 of sputtering zinc oxide, the sputtering power is 120W, the sputtering time is 30min, and the substrate temperature is 308.15K.
8. The method for preparing an amorphous silicon photoelectric layer film based on a photoelectric tweezers device according to claim 4 or 6, wherein the thickness of the amorphous silicon is 1500nm, and the thickness of the zinc oxide is 50 nm.
9. The method for preparing an amorphous silicon photoelectric layer film based on an optoelectronic tweezers device as claimed in claim 1, wherein in step S4, the prepared amorphous silicon film is annealed by using a muffle furnace.
10. The method of claim 9, wherein in the step of annealing the thin film in the step S4, the annealing temperature is 573.15K and the annealing time is 30 min.
CN202010881471.3A 2020-08-27 2020-08-27 Preparation method of amorphous silicon photoelectric layer film based on photoelectric tweezers equipment Withdrawn CN111996508A (en)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1964078A (en) * 2006-12-20 2007-05-16 北京理工大学 A zinc oxide thin film for solar battery and manufacture method
CN101563477A (en) * 2006-12-21 2009-10-21 应用材料股份有限公司 Reactive sputter deposition of a transparent conductive film
CN101619445A (en) * 2009-07-31 2010-01-06 北京科技大学 Method for preparing transparent conductive film material
CN101665905A (en) * 2009-10-13 2010-03-10 南京航空航天大学 Aluminum-induced low temperature preparation method of large grain size polysilicon film
US20100240165A1 (en) * 2007-10-29 2010-09-23 Tg Solar Corporation Method for manufacturing solar cell
CN102312191A (en) * 2010-06-30 2012-01-11 中国科学院上海硅酸盐研究所 Method for preparing high-resistance transparent zinc oxide (ZnO) thin film by utilizing direct current magnetic control sputtering equipment
CN103060768A (en) * 2013-01-17 2013-04-24 云南师范大学 Low-temperature rapid crystallization method for amorphous silicon film
CN107988578A (en) * 2017-12-06 2018-05-04 重庆理工大学 A kind of preparation method of polycrystalline luminescence generated by light Zinc Tungstate film

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1964078A (en) * 2006-12-20 2007-05-16 北京理工大学 A zinc oxide thin film for solar battery and manufacture method
CN101563477A (en) * 2006-12-21 2009-10-21 应用材料股份有限公司 Reactive sputter deposition of a transparent conductive film
US20100240165A1 (en) * 2007-10-29 2010-09-23 Tg Solar Corporation Method for manufacturing solar cell
CN101619445A (en) * 2009-07-31 2010-01-06 北京科技大学 Method for preparing transparent conductive film material
CN101665905A (en) * 2009-10-13 2010-03-10 南京航空航天大学 Aluminum-induced low temperature preparation method of large grain size polysilicon film
CN102312191A (en) * 2010-06-30 2012-01-11 中国科学院上海硅酸盐研究所 Method for preparing high-resistance transparent zinc oxide (ZnO) thin film by utilizing direct current magnetic control sputtering equipment
CN103060768A (en) * 2013-01-17 2013-04-24 云南师范大学 Low-temperature rapid crystallization method for amorphous silicon film
CN107988578A (en) * 2017-12-06 2018-05-04 重庆理工大学 A kind of preparation method of polycrystalline luminescence generated by light Zinc Tungstate film

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Application publication date: 20201127