CN111987194A - AlGaN deep ultraviolet LED with vertical quantum well structure and preparation method thereof - Google Patents
AlGaN deep ultraviolet LED with vertical quantum well structure and preparation method thereof Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 229910016920 AlzGa1−z Inorganic materials 0.000 claims abstract description 23
- 230000000903 blocking effect Effects 0.000 claims abstract description 15
- 238000004151 rapid thermal annealing Methods 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims abstract description 3
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
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- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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Abstract
The invention provides a preparation method of a vertical quantum well structure AlGaN deep ultraviolet LED, belonging to the technical field of semiconductorsxGa1‑xN layer, preparing N-type metal contact layer, first insulating dielectric mask layer, and making micron holes to N-AlxGa1‑xN layer, then continue epitaxial growth N-Al on the whole structure of micron holerGa1‑rN micron column, preparing the second insulating dielectric mask layer, and N-AlrGa1‑rSequentially extending i-Al on the side surface of the N micron columnyGa1‑yN/i‑AlzGa1‑zN multiple quantum well, i-AlpGa1‑pN-electron blocking layer, p-AlqGa1‑qAnd N layers, finally depositing a p-type contact metal electrode, and carrying out rapid thermal annealing treatment. The invention also provides a vertical component prepared by the methodThe AlGaN deep ultraviolet LED with the quantum well structure has the advantages that the direction of a plurality of quantum wells of the AlGaN deep ultraviolet LED is along the direction of a nonpolar plane, so that a strong built-in electric field in a quantum well region caused by a polarization effect can be avoided, and the internal quantum efficiency of the device is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an AlGaN deep ultraviolet LED with a vertical quantum well structure and a preparation method thereof.
Background
The deep ultraviolet light source has very wide application potential in the fields of medical treatment and health, sewage purification, non-line-of-sight high-speed communication and the like. The current deep ultraviolet light source is mainly provided by a mercury-containing lamp, has the defects of large space volume, high working voltage, serious environmental pollution, easy breakage of products and the like, and urgently needs a novel solid-state deep ultraviolet light source which is small in size, energy-saving, environment-friendly and good in stability to replace the current mercury lamp technology. The AlGaN material is a direct wide-bandgap semiconductor material, has a bandgap width continuously adjustable between 3.4eV and 6.2eV, has good thermal stability and chemical stability, and is an ideal material for preparing a new generation of deep ultraviolet solid-state LED light source.
Currently, an AlGaN material-based deep ultraviolet LED device generally adopts an AlGaN/AlGaN multi-quantum well structure periodically arranged in a (0001) direction as an active region, and injects electrons and holes into a well layer of the active region to perform radiative recombination light emission. The AlGaN material has strong spontaneous polarization effect, and according to the Gaussian theorem, polarization charge is caused at an interface position by the change of polarization intensity, and the density and the charge type of the polarization charge are determined by the size and the direction of the change of the polarization intensity. For AlGaN multi-quantum well structures, as the heterojunction composition growing along the (0001) direction becomes larger, positive polarization charges are formed at the interface; when the heterojunction composition growing along the (0001) direction decreases, negative polarization charges are formed at the interface. After the multiple quantum wells are formed, the well layer of the multiple quantum well structure generates a strong built-in electric field due to the action of interface charges.
The polarized built-in electric field enables the energy band structure of the multi-quantum well layer to be seriously inclined, and the quantum confinement Stark effect is generated, so that the overlapping degree of electron hole space is sharply reduced, the radiative recombination efficiency is obviously reduced, the effective forbidden band width of the quantum well region is reduced, and the light-emitting wavelength is red-shifted. In addition, another study shows that quantum confinement Stark effect caused by polarization effect may have a certain correlation with Droop effect. Therefore, the elimination of the multi-quantum well polarization effect plays an important role in improving the efficiency of the AlGaN-based deep ultraviolet LED. At present, the technical route for eliminating the polarization effect generally lies in preparing a nonpolar plane AlN substrate. However, the preparation of the non-polar AlN substrate is technically difficult, immature, and expensive.
In view of this, it is urgently needed to research a preparation method of an AlGaN-based deep ultraviolet LED, a technology of eliminating a polarization effect avoids a technology of preparing an AlN substrate with a non-polar surface, and the AlGaN-based deep ultraviolet LED prepared by the method has no multi-quantum well polarization effect and is high in efficiency.
Disclosure of Invention
The invention aims to provide an AlGaN deep ultraviolet LED with a vertical quantum well structure and a preparation method thereof, aiming at the defects in the prior art, the multiple quantum well structure in the direction of a nonpolar surface is prepared on a polar surface substrate, and the prepared AlGaN multiple quantum well deep ultraviolet LED with the vertical structure has the multiple quantum well direction along the direction of the nonpolar surface, so that a strong built-in electric field in a quantum well region caused by polarization effect can be avoided, and the internal quantum efficiency of a device is improved.
The object of the invention can be achieved by the following technical measures:
the invention provides a preparation method of a vertical quantum well structure AlGaN deep ultraviolet LED, which comprises the following steps:
step 1: providing a substrate for growing a nitride material;
step 2: growing an AlN template on the substrate;
and step 3: growing n-Al on the AlN templatexGa1-xN layers, wherein x is more than or equal to 0.45;
and 4, step 4: in the n-AlxGa1-xPreparing an N-type metal contact layer on the N layer;
and 5: preparing a first insulating dielectric mask layer on the n-type metal layer;
step 6: etching a micron hole on the first insulating dielectric mask layer until the n-AlxGa1-xN layers;
and 7: continuously extending n-Al on the whole structure etched with the micron holesrGa1-rN, to produce N-AlrGa1-rN micron column, wherein r is more than or equal to 0.45;
and 8: in the n-AlrGa1-rPreparing a second insulating dielectric mask layer above the N micron column;
and step 9: in the n-AlrGa1-rSide epitaxial i-Al of N micron columnyGa1-yN/i-AlzGa1-zN multi quantum well layer, wherein, y>z≥0.45；
Step 10: in the i-AlyGa1-yN/AlzGa1-zGrowing i-Al outside the N multi-quantum well layerpGa1-pA barrier layer for N electrons, wherein p>y；
Step 11: in the i-AlpGa1-pGrowing p-Al on the outer side of the N electron blocking layerqGa1-qN layer, wherein p>q>z；
Step 12: in the p-AlqGa1-qAnd depositing a p-type contact metal electrode on the outer side of the N layer, and carrying out rapid thermal annealing treatment.
Further, growing the AlN template and the n-AlxGa1-xN layer, the N-AlrGa1-rN micron column, i-AlyGa1-yN/i-AlzGa1-zN multi-quantum well layer and i-AlpGa1-pN-electron blocking layer, the p-AlqGa1-qThe method of the N layer is any one of MOCVD, MBE or HVPE.
Further, the preparation method of the n-type metal contact layer is an electron beam evaporation method;
the preparation method of the p-type contact metal electrode is an electron beam evaporation method or a thermal evaporation method;
the etching method of the micron holes is any one of RIE, ICP or wet etching.
Furthermore, the preparation method of the first insulating dielectric mask layer and the second insulating dielectric mask layer is any one of PECVD technology and ALD technology.
The invention also provides the AlGaN deep ultraviolet LED with the vertical quantum well structure, which is prepared by the preparation method and sequentially comprises the substrate, the AlN template and the n-Al from bottom to topxGa1-xThe N layer, the N-type metal contact layer and the first insulating dielectric mask layer are formed;
the micron holes are etched in the n-type metal contact layer and the first insulating dielectric mask layer, and the n-AlrGa1-rN micron posts are grown on the whole structure of the micron holes, and the second insulating dielectric mask layer is arranged on the N-AlrGa1-rThe upper part of the N micron column;
from the n-AlrGa1-rThe N micron column sequentially comprises the i-AlyGa1-yN/i-AlzGa1-zN multi-quantum well layer and i-AlpGa1-pN-electron blocking layer, the p-AlqGa1-qThe N layer and the p-type contact metal electrode are arranged on the substrate;
wherein x is more than or equal to 0.45, r is more than or equal to 0.45, y is more than or equal to 0.45, p is more than y, and p is more than q is more than z.
Further, the substrate is made of sapphire or AlN.
Further, the n-AlxGa1-xN layer with thickness of 300nm, component x of 0.45 and doping concentration>5e18cm-3；
The i-AlyGa1-yN/i-AlzGa1-zN multi quantum well layer, i-AlyGa1-yN lateral thickness of 5nm, component y of 0.6, unintentional doping, i-AlzGa1-zN lateral thickness of 3nm, component z 0.45, unintentional doping, the i-AlyGa1-yN/i-AlzGa1-zThe repetition period of the N multi-quantum well layer is 5;
the i-AlpGa1-pAn N electron blocking layer, the component p being 0.7, the lateral thickness being 10 nm;
the p-AlqGa1-qAnd the N layer has a component q of 0.5 and a lateral thickness of 100 nm.
Furthermore, the shape of the micron hole is regular hexagon, the side of the micron hole is parallel to the (1-100) crystal face, and the side length is 1 um;
the n-AlrGa1-rThe height of the N micron columns higher than the surface of the first insulating dielectric mask layer is more than 10 um.
Furthermore, the first insulating dielectric mask layer and the second insulating dielectric mask layer are both made of silicon oxide or silicon nitride, and the thicknesses of the first insulating dielectric mask layer and the second insulating dielectric mask layer are both 300 nm.
Furthermore, the n-type metal contact layer is made of metal Ti and has a thickness of 100 nm;
the p-type contact electrode is made of any one of Ti, Al, Ni, Pt, Au and ITO or an alloy film thereof, and the thickness of the p-type contact electrode is 250 nm.
The preparation method of the AlGaN deep ultraviolet LED with the vertical quantum well structure has simple process, is suitable for industrial production, and can prepare a multi-quantum well structure in a non-polar surface direction under the condition of meeting a polar surface substrate, thereby improving the internal quantum efficiency of a device. According to the prepared AlGaN deep ultraviolet LED with the vertical quantum well structure, the direction of a plurality of quantum wells is along the direction of a non-polar surface, so that a strong built-in electric field in a quantum well region caused by a polarization effect can be avoided, the spatial coincidence rate of injected electron holes in the quantum well region is improved, the red shift of the light-emitting wavelength is eliminated, the Droop phenomenon caused by the polarization effect is weakened, and a high-efficiency deep ultraviolet LED device is obtained. Meanwhile, the preparation of the device is completed on the substrate with the (0001) polar surface, and the problems of high technical difficulty, immature process and high cost of the preparation of a non-polar substrate do not exist.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a flow chart of a method for fabricating a vertical quantum well structure AlGaN deep ultraviolet LED of the present invention;
FIG. 2 is a schematic structural diagram of a vertical quantum well structure AlGaN deep ultraviolet LED of the present invention;
description of reference numerals: 1-a substrate; 2-AlN template; 3-n-AlxGa1-xN layers; a 4-n type metal contact layer; 5-a first insulating dielectric mask layer; 6-n-AlrGa1-rAn N micron column; 7-a second insulating dielectric mask layer; 8-i-AlyGa1-yN/i-AlzGa1-zAn N multi-quantum well layer; 9-i-AlpGa1-pAn N electron blocking layer; 10-p-AlqGa1-qN layers; 11-p type contact metal electrodes.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
In order to make the description of the present disclosure more complete and complete, the following description is given for illustrative purposes with respect to the embodiments and examples of the present invention; it is not intended to be the only form in which the embodiments of the invention may be practiced or utilized. The embodiments are intended to cover the features of the various embodiments as well as the method steps and sequences for constructing and operating the embodiments. However, other embodiments may be utilized to achieve the same or equivalent functions and step sequences.
As shown in fig. 1 and 2, the invention provides a method for preparing a vertical quantum well structure AlGaN deep ultraviolet LED, comprising the following steps:
step 1: providing a substrate 1 for growing nitride materials;
step 2: growing an AlN template 2 on the substrate;
and step 3: growing n-Al on the AlN template 2xGa1-xN layer 3, wherein x is more than or equal to 0.45;
and 4, step 4: in the n-AlxGa1-xPreparing an N-type metal contact layer 4 on the N layer 3;
and 5: preparing a first insulating dielectric mask layer 5 on the n-type metal layer 4;
step 6: etching a micron hole on the first insulating dielectric mask layer until the n-AlxGa1-x An N layer 3;
and 7: continuously extending n-Al on the whole structure etched with the micron holesrGa1-rN, to produce N-AlrGa1-r N micron column 6, wherein r is more than or equal to 0.45;
and 8: in the n-AlrGa1-rPreparing a second insulating dielectric mask layer 7 above the N micron posts 6;
and step 9: in the n-AlrGa1-rEpitaxial i-Al of side surface of N micron column 6yGa1-yN/i-AlzGa1-zN multiple quantum well layer 8, wherein y>z≥0.45；
Step 10: in the i-AlyGa1-yN/AlzGa1-zGrowing i-Al outside the N multi-quantum well layer 8pGa1-pAn N electron blocking layer 9, wherein p>y；
Step 11: in the i-AlpGa1-pp-Al is grown outside the N electron blocking layer 9qGa1-qN layer 10, wherein p>q>z；
Step 12: in the p-AlqGa1-qAnd a p-type contact metal electrode 11 is deposited on the outer side of the N layer 10, and is subjected to rapid thermal annealing treatment.
Wherein the AlN template 2 and the n-Al are grownxGa1-xN layer 3, the N-AlrGa1-r N micron column 6, i-AlyGa1-yN/i-AlzGa1-zN multi-quantum well layer 8, i-AlpGa1-pN electron blocking layer 9, the p-AlqGa1-qThe method of the N layer 10 may be any one of epitaxial growth methods such as MOCVD, MBE, and HVPE. And, the preferable growth temperature for growing the AlN template 2 is 1300 ℃.
The n-type metal contact layer 4 may be prepared by electron beam evaporation, and the p-type metal contact electrode 11 may be prepared by electron beam evaporation or thermal evaporation. The etching method of the micron holes can adopt any one of RIE, ICP, wet etching and the like.
The first insulating dielectric mask layer 5 and the second insulating dielectric mask layer 7 may be prepared by any one of PECVD, ALD and the like.
The invention also provides the AlGaN deep ultraviolet LED with the vertical quantum well structure, which is prepared by the preparation method and sequentially comprises the substrate 1, the AlN template 2 and the n-Al from bottom to topxGa1-xThe N layer 3, the N-type metal contact layer 4 and the first insulating dielectric mask layer 5;
the micron holes are etched in the n-type metal contact layer 4 and the first insulating dielectric mask layer 5, and the n-Al isrGa1-rN micron posts 6 are grown on the full structure of the micron holes, and the second insulating dielectric mask layer 7 is arranged on the N-AlrGa1-rAbove the N micron column 6;
from the n-AlrGa1-rThe N micron column 6 sequentially comprises the i-Al outwardsyGa1-yN/i-AlzGa1-zN multi-quantum well layer 8, i-AlpGa1-pN electron blocking layer 9, the p-AlqGa1-qAn N layer 10, the p-type contact metal electrode 11;
wherein x is more than or equal to 0.45, r is more than or equal to 0.45, y is more than or equal to 0.45, p is more than y, and p is more than q is more than z.
The substrate is preferably made of sapphire or AlN.
The n-AlxGa1-xThe preferred design of the N layer 3 is: thickness of 300nm, component x of 0.45, doping concentration>5e18cm-3. The i-AlyGa1-yN/i-AlzGa1-zThe preferred design of the N mqw layer 8 is: i-AlyGa1-yN lateral thickness of 5nm, component y of 0.6, unintentional doping, i-AlzGa1-zN lateral thickness of 3nm, component z 0.45, unintentional doping, the i-AlyGa1-yN/i-AlzGa1-zThe repetition period of the N multi quantum well layer 8 is 5. The i-AlpGa1-pThe preferred design of the N-electron blocking layer 9 is: component p ═ 0.7, and lateral thickness 10 nm. The p-AlqGa1-qThe preferred design of the N layer 10 is: component q is 0.5 and has a lateral thickness of 100 nm.
The n-AlxGa1-xThe crystal structure of the N layer is a hexagonal wurtzite structure, the unit cell is a regular hexagon when viewed along the growth direction, and the crystal plane where the edge is vertical to the c plane is just the (1-100) crystal plane. The shape of the micron pores is preferably regular hexagon, the edges of the micron pores are parallel to (1-100) crystal planes, and the edge length is 1um, namely the regular hexagon of the micron pores and n-AlxGa1-xThe relative positions of the regular hexagons of the N unit cells are parallel. The n-AlrGa1-rThe height of the N micron posts 6 above the surface of the first insulating dielectric mask layer is preferably greater than 10 um.
The first insulating dielectric mask layer 5 and the second insulating dielectric mask layer 7 are preferably made of silicon oxide or silicon nitride, and the thicknesses thereof are preferably 300 nm.
The material of the n-type metal contact layer 4 is preferably metal Ti, and the thickness is preferably 100 nm. The p-type contact electrode 11 may be made of any one of Ti, Al, Ni, Pt, Au, ITO, or an alloy thin film thereof, and preferably has a thickness of 250 nm.
The preparation method of the AlGaN deep ultraviolet LED with the vertical quantum well structure has simple process, is suitable for industrial production, and can prepare a multi-quantum well structure in a non-polar surface direction under the condition of meeting a polar surface substrate, thereby improving the internal quantum efficiency of a device. According to the prepared AlGaN deep ultraviolet LED with the vertical quantum well structure, the direction of a plurality of quantum wells is along the direction of a non-polar surface, so that a strong built-in electric field in a quantum well region caused by a polarization effect can be avoided, the spatial coincidence rate of injected electron holes in the quantum well region is improved, the red shift of the light-emitting wavelength is eliminated, the Droop phenomenon caused by the polarization effect is weakened, and a high-efficiency deep ultraviolet LED device is obtained. Meanwhile, the preparation of the device is completed on the substrate with the (0001) polar surface, and the problems of high technical difficulty, immature process and high cost of the preparation of a non-polar substrate do not exist.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A preparation method of a vertical quantum well structure AlGaN deep ultraviolet LED is characterized by comprising the following steps:
step 1: providing a substrate for growing a nitride material;
step 2: growing an AlN template on the substrate;
and step 3: growing n-Al on the AlN templatexGa1-xN layers, wherein x is more than or equal to 0.45;
and 4, step 4: in the n-AlxGa1-xPreparing an N-type metal contact layer on the N layer;
and 5: preparing a first insulating dielectric mask layer on the n-type metal layer;
step 6: etching a micron hole on the first insulating dielectric mask layer until the n-AlxGa1-xN layers;
and 7: continuously extending n-Al on the whole structure etched with the micron holesrGa1-rN, to produce N-AlrGa1-rN micron column, wherein r is more than or equal to 0.45;
and 8: in the n-AlrGa1-rPreparing a second insulating dielectric mask layer above the N micron column;
and step 9: in the n-AlrGa1-rSide epitaxial i-Al of N micron columnyGa1-yN/i-AlzGa1-zN multi quantum well layer, wherein, y>z≥0.45；
Step 10: in the i-AlyGa1-yN/AlzGa1-zGrowing i-Al outside the N multi-quantum well layerpGa1-pA barrier layer for N electrons, wherein p>y；
Step 11: in the i-AlpGa1-pGrowing p-Al on the outer side of the N electron blocking layerqGa1-qN layer, wherein p>q>z；
Step 12: in the p-AlqGa1-qAnd depositing a p-type contact metal electrode on the outer side of the N layer, and carrying out rapid thermal annealing treatment.
2. The method for preparing the AlGaN deep ultraviolet LED with the vertical quantum well structure according to claim 1, wherein the AlN template and the n-Al are grownxGa1-xN layer, the N-AlrGa1-rN micron column, i-AlyGa1-yN/i-AlzGa1-zN multi-quantum well layer and i-AlpGa1-pN-electron blocking layer, the p-AlqGa1-qThe method of the N layer is any one of MOCVD, MBE or HVPE.
3. The method for preparing the AlGaN deep ultraviolet LED with the vertical quantum well structure according to claim 1, wherein the method for preparing the n-type metal contact layer is an electron beam evaporation method;
the preparation method of the p-type contact metal electrode is an electron beam evaporation method or a thermal evaporation method;
the etching method of the micron holes is any one of RIE, ICP or wet etching.
4. The method for preparing the AlGaN deep ultraviolet LED of the vertical quantum well structure according to claim 1, wherein the first insulating dielectric mask layer and the second insulating dielectric mask layer are prepared by PECVD or ALD technology.
5. The AlGaN deep ultraviolet LED with the vertical quantum well structure prepared by the preparation method according to any one of claims 1 to 4, characterized by comprising the substrate, the AlN template and the n-Al in sequence from bottom to topxGa1-xThe N layer, the N-type metal contact layer and the first insulating dielectric mask layer are formed;
the micron holes are etched in the n-type metal contact layer and the first insulating dielectric mask layer, and the micron holes are formed in the n-type metal contact layer and the first insulating dielectric mask layern-AlrGa1-rN micron posts are grown on the whole structure of the micron holes, and the second insulating dielectric mask layer is arranged on the N-AlrGa1-rThe upper part of the N micron column;
from the n-AlrGa1-rThe N micron column sequentially comprises the i-AlyGa1-yN/i-AlzGa1-zN multi-quantum well layer and i-AlpGa1-pN-electron blocking layer, the p-AlqGa1-qThe N layer and the p-type contact metal electrode are arranged on the substrate;
wherein x is more than or equal to 0.45, r is more than or equal to 0.45, y is more than or equal to 0.45, p is more than y, and p is more than q is more than z.
6. The AlGaN deep ultraviolet LED of claim 5, wherein the substrate is made of sapphire or AlN.
7. The AlGaN deep ultraviolet LED of claim 5, wherein the n-Al is selected from the group consisting ofxGa1- xN layer with thickness of 300nm, component x of 0.45 and doping concentration>5e18cm-3；
The i-AlyGa1-yN/i-AlzGa1-zN multi quantum well layer, i-AlyGa1-yN lateral thickness of 5nm, component y of 0.6, unintentional doping, i-AlzGa1-zN lateral thickness of 3nm, component z 0.45, unintentional doping, the i-AlyGa1-yN/i-AlzGa1-zThe repetition period of the N multi-quantum well layer is 5;
the i-AlpGa1-pAn N electron blocking layer, the component p being 0.7, the lateral thickness being 10 nm;
the p-AlqGa1-qAnd the N layer has a component q of 0.5 and a lateral thickness of 100 nm.
8. The AlGaN deep ultraviolet LED with the vertical quantum well structure according to claim 5, wherein the shape of the micron hole is a regular hexagon, the edge of the micron hole is parallel to a (1-100) crystal plane, and the edge length of the micron hole is 1 um;
the n-AlrGa1-rThe height of the N micron columns higher than the surface of the first insulating dielectric mask layer is more than 10 um.
9. The AlGaN deep ultraviolet LED according to claim 5, wherein the first insulating dielectric mask layer and the second insulating dielectric mask layer are both made of silicon oxide or silicon nitride and have a thickness of 300 nm.
10. The AlGaN deep ultraviolet LED according to claim 5, wherein the n-type metal contact layer is made of Ti and has a thickness of 100 nm;
the p-type contact electrode is made of any one of Ti, Al, Ni, Pt, Au and ITO or an alloy film thereof, and the thickness of the p-type contact electrode is 250 nm.
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| US20160056325A1 (en) * | 2014-08-19 | 2016-02-25 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
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| US20160056325A1 (en) * | 2014-08-19 | 2016-02-25 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
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