CN111979527A - Metal organic source spraying device and process for preparing semiconductor material - Google Patents
Metal organic source spraying device and process for preparing semiconductor material Download PDFInfo
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- CN111979527A CN111979527A CN202010892618.9A CN202010892618A CN111979527A CN 111979527 A CN111979527 A CN 111979527A CN 202010892618 A CN202010892618 A CN 202010892618A CN 111979527 A CN111979527 A CN 111979527A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 239000000463 material Substances 0.000 title claims abstract description 35
- 238000005507 spraying Methods 0.000 title claims abstract description 16
- 239000002184 metal Substances 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title description 3
- 238000006243 chemical reaction Methods 0.000 claims abstract description 49
- 239000007788 liquid Substances 0.000 claims abstract description 24
- 238000002360 preparation method Methods 0.000 claims abstract description 22
- 230000007246 mechanism Effects 0.000 claims abstract description 17
- 238000001802 infusion Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 20
- 238000000605 extraction Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 239000000110 cooling liquid Substances 0.000 claims description 4
- 238000005086 pumping Methods 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims 1
- 239000011111 cardboard Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
- B05B7/04—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
The invention discloses a metal organic source spraying device for preparing semiconductor materials, which comprises a shell, wherein a reaction chamber is formed in the shell, a fixed block is fixedly arranged in the reaction chamber, the fixed block is arranged in an L shape, a transverse plate of the fixed block is arranged to be tightly attached to the side wall of one side of the reaction chamber, a longitudinal plate of the fixed block is provided with a fixing mechanism corresponding to the transverse plate, a liquid cavity is arranged in the transverse plate of the fixed block, two infusion ports are symmetrically and fixedly arranged on the side walls of the two sides of the shell, the two infusion ports penetrate through the shell and the side wall of the fixed block and are communicated with the liquid cavity, a vacuumizing machine is fixedly arranged on the side wall of the fixed block, and two exhaust pipes are fixedly arranged at the output end of. The invention can automatically and circularly carry out alternate operation of vacuumizing and gas introduction in the reaction process, ensures the vacuum environment of the reaction, stabilizes the gas pressure during the reaction and improves the yield of semiconductor preparation.
Description
Technical Field
The invention relates to the technical field of semiconductor preparation, in particular to a metal organic source spraying device for preparing a semiconductor material and a process thereof.
Background
The preparation of semiconductor materials in a vacuum state requires separate feeding of different reaction gases into the reaction chamber, which must be separated and cooled before being fed into the reaction chamber, and the reaction gases are required to be sufficiently and uniformly mixed on the surface of the substrate after being fed into the reaction chamber, so that generally a sprayer device is used for gas feeding.
However, in the prior art, during the preparation process of semiconductor materials, the gas pressure in the reaction chamber is often too high due to continuous gas introduction, but during the depressurization process of the reaction chamber, the vacuum environment in the reaction chamber is often destroyed, and the yield of semiconductor preparation is greatly reduced.
Disclosure of Invention
The invention aims to solve the defects in the prior art, such as: in the traditional semiconductor preparation process, the pressure is often higher due to continuous gas introduction, and the vacuum environment of the reaction is difficult to ensure in the pressure reduction process, so that the metal organic source spraying device for preparing the semiconductor material and the process thereof are provided.
In order to achieve the purpose, the invention adopts the following technical scheme:
a metal organic source spraying device for preparing semiconductor materials comprises a shell, wherein a reaction chamber is formed in the shell, a fixed block is fixedly arranged in the reaction chamber, the fixed block is arranged in an L shape, a transverse plate of the fixed block is tightly attached to one side wall of the reaction chamber, a longitudinal plate of the fixed block is provided with a fixing mechanism corresponding to the transverse plate, a liquid cavity is formed in the transverse plate of the fixed block, two infusion ports are symmetrically and fixedly arranged on the side walls of two sides of the shell, the two infusion ports penetrate through the lateral walls of the shell and the fixed block and are communicated with the liquid cavity, a vacuumizing machine is fixedly arranged on the lateral wall of the fixed block, two exhaust pipes are fixedly arranged at the output end of the vacuumizing machine, the two exhaust pipes penetrate through the transverse plate and the liquid cavity of the fixed block, and two air inlet pipes are fixedly arranged on the transverse plate, two the intake pipe all runs through the diaphragm and the liquid chamber setting of fixed block, be equipped with the on-off control mechanism who corresponds with intake pipe and exhaust tube on the vertical plate of fixed block, still be provided with the substrate on the lower wall of reaction chamber, the fixed downside of fixed block diaphragm that sets up of substrate, just the lateral wall of substrate all hugs closely the setting with the vertical plate lateral wall of fixed block and the lateral wall of reaction chamber.
Preferably, fixed establishment includes two cardboards, the fixed picture peg that is provided with on the vertical board lower wall of fixed block, set up the slot that corresponds with the picture peg on the lower wall of reacting chamber, two flexible grooves have been seted up to the symmetry on the lateral wall of slot, two the cardboard slides respectively and sets up at two flexible inslot, and two the cardboard all is connected with the inner wall in flexible groove through expanding spring, the picture peg is close to all sets up the draw-in groove that corresponds with the cardboard on the both sides lateral wall of cardboard, two still all fixed driving lever that is provided with on the cardboard, two the equal slip of driving lever runs through the lateral wall setting of casing, two bar spouts that correspond with the driving lever are seted up to the symmetry on the lateral wall of casing.
Preferably, the switch control mechanism comprises a sliding plate, the sliding plate is arranged on a longitudinal plate of the fixed block in a sliding manner, the side wall of the sliding plate is tightly attached to the side wall of the reaction chamber, the two air inlet pipes and the two air exhaust pipes are arranged in a sliding manner and penetrate through the sliding plate, the two air inlet pipes and the two air exhaust pipes are internally provided with two baffle plates in a sliding manner, a plurality of baffle plates are arranged on the lower side of the air inlet pipes and the upper side of the air exhaust pipes in a group in a pairwise manner and are respectively arranged in a sliding manner, the inner walls of the two air inlet pipes and the two air exhaust pipes are symmetrically provided with two accommodating grooves corresponding to the baffle plates, each baffle plate is arranged in the accommodating grooves in a sliding manner and is connected with the inner walls of the accommodating grooves through second springs, one side wall of each baffle plate, which is close to the second springs, is, the side walls of the two air inlet pipes and the two air exhaust pipes are symmetrically provided with sliding blocks in a sliding mode, one end, away from the baffle, of each pull rope is fixedly arranged on the sliding block, and limiting mechanisms corresponding to the baffles are arranged in the air inlet pipes and the air exhaust pipes.
Preferably, the limiting mechanism includes a plurality of slide bars, every two spouts have been seted up to equal symmetry in exhaust tube and the inlet tube, and is a plurality of the slide bar slides and sets up in the spout, every the slide bar all is connected with the one end inner wall of spout through first spring, and every the spout all sets up with accomodating the groove intercommunication, and is a plurality of the bayonet socket that corresponds with the slide bar all is seted up on the baffle is close to one side lateral wall of slide bar, and is a plurality of the one end lateral wall that the baffle is close to the slide bar all is the slope setting, and is a plurality of all the fixed push rod that is provided with on the one end lateral wall that the baffle was kept away from to the slide bar, and is a plurality of the push rod all runs through the lateral wall setting of inlet tube and.
Preferably, seal sleeves are fixedly sleeved on the outer walls of the air inlet pipe and the air exhaust pipe.
A preparation process of a semiconductor material comprises the following steps:
s1, firstly, poking the poking rod to drive the clamping plate to be accommodated in the telescopic groove, inserting the inserting plate into the slot on the lower wall of the reaction chamber, and then loosening the poking rod to enable the clamping plate to be clamped into the clamping groove on the inserting plate, and then installing and fixing the fixing block.
And S2, starting the vacuum extractor, conveying cooling liquid into the liquid cavity through the liquid conveying port, and spraying two gases onto the substrate through the two gas inlet pipes to react, so that the preparation of the semiconductor material can be started.
S3, when the device is opened, the baffle in the air inlet pipe is in a closed state, the baffle in the air exhaust pipe is in an open state, the space above the substrate is vacuumized, the sliding plate moves downwards, when the sliding plate moves to the lower sides of the air inlet pipe and the air exhaust pipe, the vacuumizing is completed, at the moment, the sliding plate pushes the sliding blocks on the side walls of the two air inlet pipes to move downwards so as to drive the pull rope to pull the baffle in the air inlet pipe to be opened, so that the sliding rod is clamped into the bayonet on the baffle, thereby opening the air inlet pipe, simultaneously, the slide plate pushes the push rod on the side wall of the exhaust pipe to move downwards so as to drive the slide rod in the exhaust pipe to move downwards and slide out of the slide rod from the bayonet on the baffle plate, thereby releasing the limitation on the baffle plate, under the action of the second spring, the baffle in the exhaust pipe is closed, so that the exhaust pipe is closed, and the cooled two gases are sprayed to the substrate through the two air inlet pipes to react to prepare the semiconductor.
S4, in the process of preparing semiconductors by air injection of the air inlet pipe, because the gas on the upper side of the substrate is increased, the slide plate is pushed to move upwards, after the slide plate moves upwards to the upper sides of the air inlet pipe and the exhaust pipe, the slide plate pushes the push rod on the upper side of the air inlet pipe to drive the slide rod in the air inlet pipe to move upwards, the limitation of the baffle in the air inlet pipe is removed, the baffle is closed under the action of the second spring, the air inlet pipe is closed, meanwhile, the slide plate drives the slide block on the side wall of the exhaust pipe to move upwards, the pull rope is pulled to drive the baffle in the exhaust pipe to.
And S5, starting air extraction, reducing pressure intensity, ensuring a vacuum environment in the reaction process, driving the sliding plate to move downwards again, sequentially opening the air inlet pipe, closing the air extraction pipe, preparing the semiconductor material, closing the air inlet pipe, opening the air extraction pipe, extracting air, and performing circulation, wherein the vacuum reaction environment is ensured while reducing pressure, so that the preparation of the semiconductor material is completed.
Compared with the prior art, the invention has the beneficial effects that: through the cooperation of the clamping plate and the clamping groove, the insertion plate is fixed in the slot, through the arrangement of the driving lever, the driving lever is stirred to drive the clamping plate to slide out of the clamping groove, so that the fixation of the insertion plate is released, the fixed block is convenient to rapidly detach, the semiconductor material is obtained, through the cooperation of the infusion port and the liquid cavity, the continuous cooling of the input reaction gas for conveying liquid through the infusion port is realized, the preparation effect of the semiconductor material is improved, through the cooperation of the sliding rod and the baffle plate, when the sliding plate pushes the sliding block, the pull rope drives the baffle plate to open, so that the sliding rod is clamped into the bayonet on the baffle plate, the fixing of the baffle plate is realized, when the sliding plate pushes the push rod, the sliding rod is driven to slide out of the bayonet on the baffle plate, the baffle plate is reset and closed under the action of the second spring, namely, through the cooperation of the sliding plate, the, therefore, the air inlet pipe is closed, the exhaust pipe is opened, the pressure reduction is completed, the vacuum environment is guaranteed, after the air exhaust is completed, the sliding plate moves downwards to push the sliding block on the air inlet pipe and the push rod on the exhaust pipe, the air inlet pipe is opened, the exhaust pipe is closed, the reaction is carried out again, the automatic circulation is carried out alternately, the pressure is maintained while the vacuum environment is guaranteed, and the yield of semiconductor preparation is guaranteed.
Drawings
FIG. 1 is a schematic structural diagram of a metal organic source spraying apparatus for preparing semiconductor material and a process thereof according to the present invention;
FIG. 2 is a schematic side view of an apparatus and process for preparing a semiconductor material using a metal-organic source spray according to the present invention;
FIG. 3 is a schematic view of the structure at A in FIG. 2;
FIG. 4 is a schematic view of the structure within the intake manifold;
FIG. 5 is a schematic view of the structure within the suction tube;
fig. 6 is a schematic structural diagram at B in fig. 4.
In the figure: the device comprises a shell 1, a reaction chamber 2, a fixed block 3, an inserting plate 4, a transfusion port 5, a vacuum pump 6, an air exhaust pipe 7, an air inlet pipe 8, a liquid cavity 9, a sliding plate 10, a substrate 11, a driving lever 12, a slot 13, a clamping plate 14, a telescopic slot 15, a telescopic spring 16, a clamping slot 17, a sliding slot 18, a sliding rod 19, a baffle 20, a first spring 21, a push rod 22, a holding slot 23, a second spring 24, a pull rope 25 and a sliding block 26.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Referring to fig. 1-6, a metal organic source spraying device for preparing semiconductor materials comprises a housing 1, a reaction chamber 2 is arranged on the housing 1, a fixed block 3 is fixedly arranged in the reaction chamber 2, the fixed block 3 is arranged in an L shape, a transverse plate of the fixed block 3 is closely attached to one side wall of the reaction chamber 2, a longitudinal plate of the fixed block 3 is provided with a fixing mechanism corresponding to the transverse plate, the fixing mechanism comprises two clamping plates 14, an inserting plate 4 is fixedly arranged on the lower wall of the longitudinal plate of the fixed block 3, the lower wall of the reaction chamber 2 is provided with a slot 13 corresponding to the inserting plate 4, the side wall of the slot 13 is symmetrically provided with two telescopic slots 15, the two clamping plates 14 are respectively arranged in the two telescopic slots 15 in a sliding manner, the two clamping plates 14 are both connected with the inner walls of the telescopic slots 15 through telescopic springs 16, the side walls of the two sides of the inserting plate 4 close, the two clamping plates 14 are also fixedly provided with a shifting rod 12, the two shifting rods 12 are arranged by sliding through the side wall of the shell 1, the side wall of the shell 1 is symmetrically provided with two strip-shaped sliding openings corresponding to the shifting rods 12, a liquid cavity 9 is arranged in a transverse plate of the fixed block 3, the side walls of the two sides of the shell 1 are symmetrically and fixedly provided with two transfusion openings 5, the two transfusion openings 5 are arranged by penetrating through the side walls of the shell 1 and the fixed block 3 and communicated with the liquid cavity 9, the side wall of the fixed block 3 is also fixedly provided with a vacuumizing machine 6, the output end of the vacuumizing machine 6 is fixedly provided with two air suction pipes 7, the two air suction pipes 7 are arranged by penetrating through the transverse plate and the liquid cavity 9 of the fixed block 3, the transverse plate of the fixed block 3 is also fixedly provided with two air inlet pipes 8, the two air inlet pipes 8 are arranged by penetrating through the transverse plate and the liquid cavity 9, the switch control mechanism comprises a sliding plate 10, the sliding plate 10 is arranged on a longitudinal plate of the fixed block 3 in a sliding manner, the side wall of the sliding plate 10 is tightly attached to the side wall of the reaction chamber 2, two air inlet pipes 8 and two exhaust pipes 7 are arranged in a sliding manner and penetrate through the sliding plate 10, seal sleeves are fixedly sleeved on the outer walls of the air inlet pipes 8 and the exhaust pipes 7, the problem that air leaks in gaps among the sliding plate 10, the air inlet pipes 8 and the exhaust pipes 7 is solved by arranging the seal sleeves, the sliding plate 10 can slide up and down under the action of air pressure, two baffle plates 20 are arranged in the two air inlet pipes 8 and the two exhaust pipes 7 in a sliding manner, a plurality of baffle plates 20 are respectively arranged on the lower side of the air inlet pipes 8 and the upper side of the exhaust pipes 7 in a sliding manner in pairs, two accommodating grooves 23 corresponding to the baffle plates 20 are symmetrically arranged on the inner walls of the two air, each baffle 20 is connected with the inner wall of the accommodating groove 23 through a second spring 24, a pull rope 25 is fixedly arranged on the side wall of one side of each baffle 20 close to the second spring 24, a plurality of pull ropes 25 are arranged to slide through the side walls of the air exhaust pipe 7 and the air intake pipe 8, sliders 26 are symmetrically arranged on the side walls of the two air intake pipes 8 and the two air exhaust pipes 7, one end of each pull rope 25 far away from the baffle 20 is fixedly arranged on the slider 26, a limiting mechanism corresponding to the baffle 20 is arranged in each air intake pipe 8 and the air exhaust pipe 7, the limiting mechanism comprises a plurality of slide bars 19, two slide grooves 18 are symmetrically arranged in each air exhaust pipe 7 and the air intake pipe 8, the plurality of slide bars 19 are arranged in the slide grooves 18 in a sliding manner, each slide bar 19 is connected with the inner wall of one end of the slide groove 18 through a first spring 21, each slide groove 18 is communicated with the accommodating groove 23, bayonets corresponding to the slide bars 19 are arranged on the side, the side walls of one ends of the plurality of slide bars 19 close to the baffle 20 are all obliquely arranged, the side walls of one ends of the plurality of slide bars 19 far away from the baffle 20 are all fixedly provided with push rods 22, the push rods 22 all penetrate through the side walls of the air inlet pipe 8 and the air exhaust pipe 7, the side walls of the two air inlet pipes 8 and the two air exhaust pipe 7 are symmetrically provided with two sliding openings corresponding to the push rods 22, the lower wall of the reaction chamber 2 is also provided with a substrate 11, the substrate 11 is fixedly arranged at the lower side of a transverse plate of the fixed block 3, the side walls of the substrate 11 are all tightly attached to the side walls of a longitudinal plate of the fixed block 3 and the side walls of the reaction chamber 2, the inserting plate 4 is fixed in the inserting groove 13 through the matching of the inserting plate 14 and the clamping groove 17, the driving lever 12 is arranged, the driving lever 14 is driven to slide out of the clamping groove, through the cooperation of the infusion port 5 and the liquid cavity 9, the continuous cooling of the reaction gas for input, which is conveyed through the infusion port 5, is realized, the preparation effect of the semiconductor material is improved, through the cooperation of the slide rod 19 and the baffle 20, when the slide plate 10 pushes the slide block 26, the pull rope 25 drives the baffle 20 to be opened, so that the slide rod 19 is clamped into the bayonet on the baffle 20, the baffle 20 is fixed, then when the slide plate 10 pushes the push rod 22, the slide rod 19 is driven to slide out of the bayonet on the baffle 20, the baffle 20 is reset and closed under the action of the second spring 24, namely through the cooperation of the slide plate 10, the slide block 26 and the push rod 22, the slide plate 10 moves upwards to respectively push the push rod 22 on the air inlet pipe 8 and the slide block 26 on the air outlet pipe 7, so as to close the air inlet pipe 8 and open the air outlet pipe 7, thereby completing the, after air extraction is finished, the sliding plate 10 moves downwards to push the sliding block 26 on the air inlet pipe 8 and the push rod 22 on the air extraction pipe 7, so that the air inlet pipe 8 is opened, the air extraction pipe 7 is closed to react again, automatic circulation is performed alternately, the pressure is maintained while the vacuum environment is ensured, and the yield of semiconductor preparation is ensured.
A preparation process of a semiconductor material comprises the following steps:
s1, firstly, the poking rod 12 is poked to drive the clamping plate 14 to be accommodated in the telescopic groove 15, the poking rod 12 is loosened after the inserting plate 4 is inserted into the slot 13 on the lower wall of the reaction chamber 2, so that the clamping plate 14 is clamped into the clamping groove 17 on the inserting plate 4, and the fixing and fixing of the fixing block 3 can be completed.
S2, starting the vacuum-pumping machine 6, conveying cooling liquid into the liquid cavity 9 through the infusion port 5, and then spraying two gases onto the substrate 11 through the two air inlet pipes 8 for reaction, so as to start the preparation of the semiconductor material.
S3, when the device is opened, the baffle 20 in the air inlet pipe 8 is closed, the baffle 20 in the air exhaust pipe 7 is opened, the space above the substrate 11 is vacuumized, the sliding plate 10 moves downwards, when the sliding plate 10 moves to the lower sides of the air inlet pipe 8 and the air exhaust pipe 7, the vacuumization is completed, the sliding plate 10 pushes the sliding blocks 26 on the side walls of the two air inlet pipes 8 to move downwards so as to drive the pull ropes 25 to pull the baffle 20 in the air inlet pipe 8 to open, the sliding rods 19 are clamped into the bayonets on the baffle 20, so as to open the air inlet pipe 8, meanwhile, the sliding plate 10 pushes the push rods 22 on the side walls of the air exhaust pipe 7 to move downwards so as to drive the sliding rods 19 in the air exhaust pipe 7 to move downwards so as to slide the sliding rods 19 out of the bayonets on the baffle 20, so as to release the restriction on the baffle 20, under the, at this time, the cooled two gases are injected onto the substrate 11 through the two gas inlet pipes 8 to react, thereby preparing a semiconductor.
S4, in the process of preparing semiconductors by injecting air into the air inlet pipe 8, because the gas on the upper side of the substrate 11 is increased, the sliding plate 10 is pushed to move upwards, after the sliding plate 10 moves upwards to the upper sides of the air inlet pipe 8 and the air exhaust pipe 7, the sliding plate 10 pushes the push rod 22 on the upper side of the air inlet pipe 8 to drive the slide rod 19 in the air inlet pipe 8 to move upwards, so that the limit of the baffle 20 in the air inlet pipe 8 is removed, the baffle 20 is closed under the action of the second spring 24, the air inlet pipe 8 is closed, meanwhile, the sliding plate 10 drives the slide block 26 on the side wall of the air exhaust pipe 7 to move upwards, so that the pull rope 25 is pulled to drive the baffle 20 in the.
And S5, starting air extraction, reducing the pressure, ensuring the vacuum environment in the reaction process, driving the sliding plate 10 to move downwards again, sequentially opening the air inlet pipe 8, closing the air extraction pipe 7, preparing the semiconductor material, closing the air inlet pipe 8, opening the air extraction pipe 7, extracting air, circulating, reducing the pressure, and ensuring the vacuum reaction environment so as to complete the preparation of the semiconductor material.
In the invention, in the process of preparing the semiconductor material, a worker only needs to stir the deflector rod 12 to drive the clamping plate 14 to be accommodated in the telescopic groove 15, the inserting plate 4 is inserted into the inserting groove 13 on the lower wall of the reaction chamber 2, the deflector rod 12 is loosened, the clamping plate 14 is clamped into the clamping groove 17 on the inserting plate 4, the fixed block 3 can be installed and fixed, the vacuumizing machine 6 is started, cooling liquid is conveyed into the liquid cavity 9 through the liquid conveying opening 5, two gases are sprayed onto the substrate 11 through the two air inlet pipes 8 to react, the preparation of the semiconductor material can be started, when the device is started, the baffle 20 in the air inlet pipe 8 is in a closed state, the baffle 20 in the air exhaust pipe 7 is in an open state, the space above the substrate 11 is vacuumized, the sliding plate 10 moves downwards at the moment, when the sliding plate 10 moves to the lower sides of the air inlet pipe 8 and the, when the vacuum pumping is completed, the slide plate 10 pushes the slide blocks 26 on the side walls of the two air inlet pipes 8 to move downwards so as to drive the pull ropes 25 to pull the baffle 20 in the air inlet pipe 8 to open, so that the slide rods 19 are clamped into the bayonets on the baffle 20, thereby opening the air inlet pipes 8, meanwhile, the slide plate 10 pushes the push rods 22 on the side walls of the air exhaust pipe 7 to move downwards so as to drive the slide rods 19 in the air exhaust pipe 7 to move downwards so as to slide the slide rods 19 out of the bayonets on the baffle 20, thereby removing the limitation on the baffle 20, under the action of the second spring 24, the baffle 20 in the air exhaust pipe 7 is closed, thereby closing the air exhaust pipe 7, at the moment, two cooled gases are sprayed onto the substrate 11 through the two air inlet pipes 8 to react to prepare a semiconductor, and in the process of preparing the semiconductor through the air injection of the air inlet pipes 8, the slide plate 10 is pushed, slide 10 promotes the push rod 22 of intake pipe 8 upside and drives slide bar 19 in the intake pipe 8 and shift up, thereby remove the restriction of baffle 20 in the intake pipe 8, closed baffle 20 under the effect of second spring 24, accomplish closing to intake pipe 8, simultaneously, slide 10 drives slider 26 on the exhaust pipe 7 lateral wall and moves up, thereby pulling stay cord 25 and driving baffle 20 in the exhaust pipe 7 to open, thereby stop admitting air and reacting, begin to bleed, this moment, reduce pressure, guarantee the vacuum environment among the reaction process, drive slide 10 to move down again, open intake pipe 8 in proper order, close exhaust pipe 7, carry out the preparation of semiconductor material, close intake pipe 8, open exhaust pipe 7, bleed, go on in a circulating manner, guarantee the vacuum reaction environment when stepping down, thereby accomplish the preparation of semiconductor material.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (6)
1. The metal organic source spraying device for preparing the semiconductor material comprises a shell (1) and is characterized in that a reaction chamber (2) is formed in the shell (1), a fixing block (3) is arranged in the reaction chamber (2) in a fixed mode, the fixing block (3) is arranged in an L mode, a transverse plate of the fixing block (3) is tightly attached to one side wall of the reaction chamber (2) and provided with a fixing mechanism corresponding to the transverse plate, a liquid cavity (9) is formed in the transverse plate of the fixing block (3), two infusion ports (5) are symmetrically and fixedly arranged on two side walls of the shell (1), the two infusion ports (5) penetrate through the side walls of the shell (1) and the fixing block (3) and are communicated with the liquid cavity (9), and a vacuum pumping machine (6) is fixedly arranged on the side wall of the fixing block (3), the fixed two exhaust tubes (7) that are provided with of output of evacuation machine (6), two exhaust tube (7) all run through the diaphragm and the setting of liquid chamber (9) of fixed block (3), it is provided with two intake pipe (8) still to fix on the diaphragm of fixed block (3), two intake pipe (8) all run through the diaphragm and the setting of liquid chamber (9) of fixed block (3), be equipped with the on-off control mechanism who corresponds with intake pipe (8) and exhaust tube (7) on the vertical plate of fixed block (3), still be provided with substrate (11) on the lower wall of reacting chamber (2), the downside of fixed block (3) diaphragm that sets up is fixed in substrate (11), just the setting is all hugged closely with the vertical plate lateral wall of fixed block (3) and the lateral wall of reacting chamber (2) to the lateral wall of substrate (11).
2. The metal organic source spraying device for preparing the semiconductor material is characterized in that the fixing mechanism comprises two clamping plates (14), an inserting plate (4) is fixedly arranged on the lower wall of a longitudinal plate of the fixing block (3), a slot (13) corresponding to the inserting plate (4) is formed in the lower wall of the reaction chamber (2), two telescopic grooves (15) are symmetrically formed in the side walls of the slot (13), the two clamping plates (14) are respectively arranged in the two telescopic grooves (15) in a sliding manner, the two clamping plates (14) are connected with the inner walls of the telescopic grooves (15) through telescopic springs (16), clamping grooves (17) corresponding to the clamping plates (14) are formed in the side walls, close to the clamping plates (14), of the inserting plate (4), and driving levers (12) are fixedly arranged on the two clamping plates (14) respectively, the two driving levers (12) are arranged to penetrate through the side walls of the housing (1) in a sliding manner, two strip-shaped sliding openings corresponding to the shifting rods (12) are symmetrically formed in the side wall of the shell (1).
3. The metal organic source spraying device for preparing the semiconductor material is characterized in that the switch control mechanism comprises a sliding plate (10), the sliding plate (10) is arranged on a longitudinal plate of the fixed block (3) in a sliding manner, the side wall of the sliding plate (10) is tightly attached to the side wall of the reaction chamber (2), the two air inlet pipes (8) and the two air exhaust pipes (7) are arranged in a sliding manner and penetrate through the sliding plate (10), the two air inlet pipes (8) and the two air exhaust pipes (7) are respectively provided with two baffle plates (20) in a sliding manner, a plurality of baffle plates (20) are respectively arranged on the lower side of the air inlet pipes (8) and the upper side of the air exhaust pipes (7) in a group in a pairwise manner in a sliding manner, two accommodating grooves (23) corresponding to the baffle plates (20) are symmetrically arranged on the inner walls of the two air inlet pipes (8) and the two air exhaust pipes (7), and each baffle plate (20) is respectively arranged in a sliding manner in, and every baffle (20) all are connected with the inner wall of accomodating groove (23) through second spring (24), every all fixed stay cord (25) that is provided with on baffle (20) the lateral wall of one side that is close to second spring (24), a plurality of stay cord (25) all slide and run through the lateral wall setting of exhaust tube (7) and intake pipe (8), two equal symmetric slip is provided with slider (26) on the lateral wall of intake pipe (8) and two exhaust tube (7), every stay cord (25) keep away from the one end of baffle (20) and all fix the setting on slider (26), every all be equipped with the limiting mechanism who corresponds with baffle (20) in intake pipe (8) and exhaust tube (7).
4. The metal organic source spraying device for preparing the semiconductor material is characterized in that the limiting mechanism comprises a plurality of sliding rods (19), two sliding grooves (18) are symmetrically formed in each of the air exhaust pipe (7) and the air inlet pipe (8), the plurality of sliding rods (19) are slidably arranged in the sliding grooves (18), each sliding rod (19) is connected with the inner wall of one end of each sliding groove (18) through a first spring (21), each sliding groove (18) is communicated with a containing groove (23), bayonets corresponding to the sliding rods (19) are formed in the side wall of one side, close to the sliding rods (19), of each baffle plate (20), the side wall of one end, close to the corresponding baffle plate (20), of each sliding rod (19) is obliquely arranged, and push rods (22) are fixedly arranged on the side wall of one end, far away from the corresponding baffle plate (20), of each sliding rod (19), a plurality of push rods (22) all run through the lateral wall setting of intake pipe (8) and exhaust tube (7), two equal symmetry is seted up two sliding mouths that correspond with push rods (22) on the lateral wall of intake pipe (8) and two exhaust tube (7).
5. The metal organic source spraying device for preparing the semiconductor material as claimed in claim 3, wherein sealing sleeves are fixedly sleeved on the outer walls of the air inlet pipe (8) and the air exhaust pipe (7).
6. A preparation process of a semiconductor material is characterized by comprising the following steps:
s1, firstly, the shifting lever (12) is shifted to drive the clamping plate (14) to be accommodated in the telescopic groove (15), the shifting lever (12) is loosened after the inserting plate (4) is inserted into the slot (13) on the lower wall of the reaction chamber (2), so that the clamping plate (14) is clamped into the clamping groove (17) on the inserting plate (4), and the fixing block (3) can be installed and fixed.
S2, starting the vacuum-pumping machine (6), conveying cooling liquid into the liquid cavity (9) through the infusion port (5), and then spraying two gases onto the substrate (11) through the two air inlet pipes (8) for reaction, so that the preparation of the semiconductor material can be started.
S3, when the device is opened, the baffle (20) in the air inlet pipe (8) is in a closed state, the baffle (20) in the exhaust pipe (7) is in an open state, the space above the substrate (11) is vacuumized at the moment, the sliding plate (10) moves downwards at the moment, when the sliding plate (10) moves to the lower sides of the air inlet pipe (8) and the exhaust pipe (7), the vacuumization is completed, the sliding plate (10) pushes the sliding blocks (26) on the side walls of the two air inlet pipes (8) to move downwards so as to drive the pull rope (25) to pull the baffle (20) in the air inlet pipe (8) to open, the sliding rod (19) is clamped into the bayonet on the baffle (20), the air inlet pipe (8) is opened, meanwhile, the sliding plate (10) pushes the push rod (22) on the side wall of the exhaust pipe (7) to move downwards so as to drive the sliding rod (19) in the exhaust pipe (7) to move downwards, therefore, the limit of the baffle plate (20) is released, the baffle plate (20) in the exhaust pipe (7) is closed under the action of the second spring (24), so that the exhaust pipe (7) is closed, and at the moment, the cooled two gases are sprayed onto the substrate (11) through the two gas inlet pipes (8) to react to prepare the semiconductor.
S4, in the process of preparing a semiconductor by injecting air into an air inlet pipe (8), because the gas on the upper side of a substrate (11) is increased, a sliding plate (10) is pushed to move upwards, after the sliding plate (10) moves upwards to the upper sides of the air inlet pipe (8) and an air exhaust pipe (7), the sliding plate (10) pushes a push rod (22) on the upper side of the air inlet pipe (8) to drive a slide rod (19) in the air inlet pipe (8) to move upwards, so that the limitation of a baffle (20) in the air inlet pipe (8) is removed, the baffle (20) is closed under the action of a second spring (24), the air inlet pipe (8) is closed, meanwhile, the sliding plate (10) drives a slide block (26) on the side wall of the air exhaust pipe (7) to move upwards, so that a pull rope (25) is pulled to drive the baffle (20) in the air exhaust.
And S5, starting air extraction, reducing the pressure, ensuring the vacuum environment in the reaction process, driving the sliding plate (10) to move downwards again, sequentially opening the air inlet pipe (8), closing the air extraction pipe (7), preparing the semiconductor material, closing the air inlet pipe (8), opening the air extraction pipe (7), extracting air, circulating, reducing the pressure, and ensuring the vacuum reaction environment so as to finish the preparation of the semiconductor material.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010892618.9A CN111979527A (en) | 2020-08-31 | 2020-08-31 | Metal organic source spraying device and process for preparing semiconductor material |
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| CN202010892618.9A CN111979527A (en) | 2020-08-31 | 2020-08-31 | Metal organic source spraying device and process for preparing semiconductor material |
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| CN101469414A (en) * | 2007-12-26 | 2009-07-01 | 中国科学院微电子研究所 | Reaction chamber structure of plate type plasma reinforced chemical vapor deposition apparatus |
| US20170087606A1 (en) * | 2015-09-28 | 2017-03-30 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
| CN107785488A (en) * | 2016-08-25 | 2018-03-09 | 杭州纤纳光电科技有限公司 | The equipment and its application method of the low pressure chemical deposition of perovskite thin film and application |
| CN109136880A (en) * | 2017-09-11 | 2019-01-04 | 株式会社国际电气 | Manufacturing method, substrate processing device and the recording medium of semiconductor devices |
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2020
- 2020-08-31 CN CN202010892618.9A patent/CN111979527A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101469414A (en) * | 2007-12-26 | 2009-07-01 | 中国科学院微电子研究所 | Reaction chamber structure of plate type plasma reinforced chemical vapor deposition apparatus |
| US20170087606A1 (en) * | 2015-09-28 | 2017-03-30 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
| CN107785488A (en) * | 2016-08-25 | 2018-03-09 | 杭州纤纳光电科技有限公司 | The equipment and its application method of the low pressure chemical deposition of perovskite thin film and application |
| CN109136880A (en) * | 2017-09-11 | 2019-01-04 | 株式会社国际电气 | Manufacturing method, substrate processing device and the recording medium of semiconductor devices |
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