CN111969117A - Novel organic crystal light-emitting diode and preparation method thereof - Google Patents
Novel organic crystal light-emitting diode and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a novel organic crystal light-emitting diode and a preparation method thereof, which sequentially comprises a first electrode, a conductive coating, a hole transport layer, a light-emitting layer, an electron transport layer and a second electrode from bottom to top; the light-emitting layer is composed of crystal structures, and molecular planes with conjugated light-emitting characteristics in the molecules have a determined orientation direction; the light-emitting layer is an organic crystal material with molecular level roughness, the light-emitting layer is formed by epitaxial growth of an organic crystalline film through organic molecule vapor deposition, the film thickness of the organic crystal material is 100nm, and RMS is less than 2 nm. The invention solves the technical problems of low red, green and blue light efficiency and poor stability of the crystalline LED.
Description
Technical Field
The invention belongs to the technical field of diode manufacturing, and particularly relates to a novel organic crystal light-emitting diode and a preparation method thereof.
Background
The development of Organic Light Emitting Diode (OLED) display technology enables the life of human beings to change over the ground, and the development of various industries such as mobile phones, computers, digital codes and the like is driven, and the continuous change of the display technology brings more visual experience to the human beings. Organic light emitting diodes are considered as a new generation of display technology with outstanding advantages. The OLED display is mainly characterized in that electron holes are injected into an active layer from a cathode and an anode respectively under the action of an external electric field, and the electron holes are recombined in the active layer to emit light. The working principle can be described simply by four steps: (1) injecting carriers from the cathode and the anode; (2) the carriers are transported in the transport layer; (3) carriers recombine to form excitons; (4) the excitons transition back to the ground state emitting photons. The red, green and blue OLED sub-pixels can emit light with different colors by controlling the brightness, the luminous brightness depends on the current flowing through the OLED, and the gray scale of the pixel point can be controlled by controlling the current flowing through the OLED.
Although OLEDs are commercialized and the market share is increasing at a fast rate every year, OLED display screens are not perfect, and the life cycle of red, green and blue pixels is different, especially the life of blue light materials is shorter than that of green and red light, so as to increase the service time, a situation of color drift may occur, which is not favorable for the stability of the display effect. In addition, the requirement for health display is to reduce the damage of blue light to human eyes to the greatest extent on the basis of meeting full-color display, so how to obtain high-efficiency long-life stable blue light to the greatest extent on the basis of ensuring normal display is a problem to be faced and solved urgently by the OLED display technology at present.
OLEDs are current mode devices and the magnitude of the current flowing through the OLED determines the brightness. For medium and small-sized AMOLED displays, currently, Samsung and Sharp adopt a scheme of in-pixel compensation, so that the current flowing through the OLED can be kept almost unchanged when the electrical characteristics of the TFT and the OLED are changed. However, such in-pixel compensation schemes are not ideal for large-scale AMOLED displays due to the increased drive speed and temporal or spatial non-uniformity of TFT and OLED electrical characteristics in large-area panels. LG corporation also proposes peripheral compensation for large AMOLED displays, but at a higher manufacturing cost.
Disclosure of Invention
The invention mainly aims to provide a novel organic crystal light-emitting diode and a preparation method thereof, and solves the technical problems of low red, green and blue light efficiency and poor stability of a crystalline light-emitting diode.
The invention realizes the purpose through the following technical scheme: a novel organic crystal light-emitting diode comprises a first electrode, a conductive coating, a hole transport layer, a light-emitting layer, an electron transport layer and a second electrode from bottom to top in sequence;
the light-emitting layer is composed of crystal structures, and molecular planes with conjugated light-emitting characteristics in the molecules have a determined orientation direction;
the light-emitting layer is an organic crystal material with molecular level roughness, the thickness of the organic crystal material is 100-130nm, and the surface roughness RMS is less than 2 nm.
Preferably, the first electrode is indium tin oxide conductive glass.
Preferably, the material of the second electrode is silver or aluminum, and the thickness of the second electrode is 100-130 nm.
Preferably, the thickness of the light emitting layer is 20 to 40 nm.
Preferably, the light-emitting layer is a single component or a multi-component blend composition.
Preferably, the light-emitting layer includes one or more of dodecahydroxyquinoline aluminum and derivatives thereof, and dodecahydroxyquinoline-naphthalimide derivatives.
Preferably, the electron transport layer is of a single-layer structure or a multi-layer structure sequentially arranged from bottom to top, and the thickness of each layer is 5-30 nm.
Preferably, the conductive coating is conductive polymer PEDOT PSS or molybdenum oxide, and the thickness is controlled within 20-40 nm.
Preferably, the crystal structure in the light emitting layer has a fixed interplanar spacing and the conjugated structure plane has an orientation perpendicular or parallel to the substrate direction.
Another object of the present invention is to provide a method for preparing a novel organic crystal light emitting diode, which comprises the following steps:
step one, taking ITO conductive glass as a first electrode, and spin-coating an organic matter A on the surface of the ITO conductive glass to form a conductive coating, wherein the organic matter A is PEDOT (Poly ethylene glycol Ether-Ether), PSS (Polybutylece terephthalate) or molybdenum oxide;
step two, adopting a vacuum evaporation method, wherein the pressure is 3.0 multiplied by 10-4-5.0×10-4Pascal, respectively depositing 0.5nmMoO on the surface of the organic matter A330-50nm of organic matter B to form a hole transport layer, the organic matter BB is one or a combination of more of dioxythiophene, carbazole salt and derivatives thereof;
depositing an organic compound C of 10-15nm continuously, and then co-depositing the organic compound C and the organic compound D of 15-20nm, wherein the ratio of the organic compound C to the organic compound D is 1:0.005-1:0.01, so as to form a light-emitting layer; the organic compound C and the organic compound D comprise one or more of aluminum dodecahydroxyquinoline and dodecahydroxyquinoline-naphthalimide derivatives;
depositing an organic compound E with the thickness of 40-45nm continuously to form an electron transport layer, wherein the organic compound E is one or a combination of molybdenum oxide, zinc oxide and an alkaline earth metal organic compound;
step five, cooling the temperature of the substrate to room temperature, and depositing 1-1.5nmLi2CO3(ii) a And depositing 100-130nm metal aluminum by using a mask plate to form a second electrode to obtain the novel organic crystal light-emitting diode.
Compared with the prior art, the novel organic crystal light-emitting diode and the preparation method thereof have the beneficial effects that: the organic semiconductors adopted by the luminous layer are all crystal structures, the molecular planes with the conjugate effect in the structure can realize the arrangement parallel to the substrate and the arrangement vertical to the substrate, and when organic molecule vapor deposition, low-temperature polycrystalline silicon thin film transistor technology and thin film packaging technology are used, the performance (turn-on voltage, external quantum conversion efficiency and the like) of the light-emitting diode is good; the three-color starting voltage, the maximum power efficiency, the maximum current efficiency and the quantum efficiency of the blue light, the green light and the red light can be kept or higher than those of devices similar to an amorphous diode, the performance is stable, the attenuation is not easy to occur, the service life is at least one grade higher than that of the amorphous diode, and the three-color starting voltage can be widely applied to the fields of display, illumination and laser. The technical problems of low red, green and blue light efficiency and poor stability of the crystalline state light-emitting diode are solved.
[ description of the drawings ]
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a graph showing the performance test results of the current density and the turn-on voltage of the red, green and blue devices in examples 1-3;
FIG. 3 is a graph of performance test results of power efficiency and brightness of red, green, and blue devices in examples 1-3;
FIG. 4 is a graph showing the performance test results of current efficiency and brightness of the red, green and blue devices of examples 1-3;
FIG. 5 is a graph of the performance test results of maximum external quantum conversion efficiency (EQE) and luminance of the red, green, and blue devices of examples 1-3;
the figures in the drawings represent:
1 a first electrode, 2 a conductive coating, 3 a hole transport layer, 4 a light emitting layer, 5 an electron transport layer, 6 a second electrode.
[ detailed description ] embodiments
Referring to fig. 1 to 5, the novel organic crystal light emitting diode of the present embodiment sequentially includes a first electrode 1, a light emitting layer 4, and a second electrode 6 from bottom to top; the organic electroluminescent display device further comprises an auxiliary structure layer, wherein the auxiliary structure layer comprises one or more of a conductive layer and a transmission layer, in the embodiment, the auxiliary structure layer comprises a conductive coating 2, a hole transmission layer 3 and an electron transmission layer 5, the electron transmission layer 5 is arranged between the light-emitting layer 4 and the second electrode 6, the hole transmission layer 3 is arranged between the conductive coating 2 and the light-emitting layer 4, and the conductive coating 2 is arranged between the first electrode 1 and the hole transmission layer 3. The auxiliary structure layer can improve carrier injection, carrier transmission, different types of carrier transmission resistance and the like.
In the invention, each deposition layer is a structure capable of realizing one or more functions, and the geometric structure of each deposition layer can be a continuous or discontinuous film layer or the sequential overlapping of a plurality of continuous or discontinuous films; the chemical composition of each film may be a single material or a mixture of two or more materials. In the present embodiment, each layer structure is specifically as follows:
the material of the first electrode 1 is ITO conductive glass.
The conductive coating 2 is of a single-layer structure or a multi-layer structure which is tightly arranged from bottom to top in sequence, and the single-layer structure is made of PEDOT (Poly ethylene glycol ether ketone) PSS or molybdenum oxide; PSS or molybdenum oxide, wherein the thickness of the molybdenum oxide is 2 nm.
The organic semiconductor in the light-emitting layer 4 is of a crystal structure, the spacing between crystal planes of the organic semiconductor is fixed, the plane of the conjugated structure has the orientation vertical to or parallel to the direction of the substrate, and the thickness of the light-emitting layer is 20-40 nm. The material of the luminous layer 4 is organic crystal luminous material X, such as one or more combination of dodecahydroxyquinoline aluminum and derivatives thereof, and dodecahydroxyquinoline-naphthalimide derivatives, the compound can realize organic vapor deposition processing and epitaxial growth process, and the material deposition thickness of the luminous layer 4 is 20-40 nm. The luminescent layer 4 is a single component or a multi-component blend component, and for the multi-component blend component, the luminescent layer components are co-deposited.
In the present embodiment, the criterion for the ordered arrangement of molecules is that a point-like or arc-like diffraction pattern can be observed by selective electron diffraction, or the presence of a diffraction peak can be observed by X-ray diffraction. The embodiment also provides application of the crystalline organic electroluminescent diode in the fields of display, illumination and laser.
The invention is further illustrated below with reference to the examples (blue, red, green).
Example 1:
a blue light organic crystal light-emitting diode comprises a first electrode ITO, a conductive coating A, a hole transport layer B, a hole transport layer C, a light-emitting layer C, an electron transport layer E and a second electrode which are sequentially and tightly arranged from bottom to top;
the preparation process comprises the following steps:
step one, spin-coating an organic substance A on the surface of ITO conductive glass to form a conductive coating A, wherein the organic substance A is PEDOT (PSS or molybdenum oxide);
step two, adopting a vacuum evaporation method, wherein the pressure is 3.0 multiplied by 10-4-5.0×10-4Pascal, respectively depositing 0.5nmMoO on the surface of the organic A330-45nm (such as 30 nm) organic matter B, the deposition rate is 0.5 nm/min, the substrate temperature is 170 ℃, and a hole transport layer B is formed, wherein the organic matter B is one or more of dioxythiophene, carbazole salt and derivatives thereofVarious combinations;
step three, continuously depositing an organic compound C with the thickness of 10nm, and then co-depositing C and D15nm, wherein the ratio of the organic compound C to the organic compound D is 1:0.005, the deposition rate is 1 nm/min, and the substrate temperature is 160 ℃ to form a light-emitting layer C to D; the organic compound C is dodecahydroxyquinoline aluminum; the organic compound D is a dodecahydroxyquinoline-naphthalimide derivative;
step four, continuously depositing an organic compound E with the thickness of 40nm, wherein the deposition rate is 1 nm/min, the substrate temperature is 140 ℃, and an electron transport layer E is formed, and the organic compound E is one or a combination of more of molybdenum oxide, zinc oxide and alkaline earth metal organic compounds;
step five, reducing the temperature of the substrate to room temperature, and depositing 1nmLi2CO3The deposition rate is 1 nm/min; and depositing 100nm of metal aluminum by using a mask plate to form a second electrode, wherein the deposition rate is 50 nm/min, and thus the blue light organic crystal light-emitting diode is obtained.
Example 2:
a green light organic crystal light-emitting diode comprises a first electrode ITO, a conductive coating A, a hole transport layer B, a hole transport layer C, a light-emitting layer C, an electron transport layer E and a second electrode which are sequentially and tightly arranged from bottom to top;
the preparation process comprises the following steps:
step one, spin-coating an organic substance A on the surface of ITO conductive glass to form a conductive coating A, wherein the organic substance A is PEDOT (PSS or molybdenum oxide);
step two, adopting a vacuum evaporation method, wherein the pressure is 3.0 multiplied by 10-4-5.0×10-4Pascal, respectively depositing 0.5nmMoO on the surface of the organic A330-45nm of organic matter B, the deposition rate is 0.5 nm/min, the substrate temperature is 170 ℃, and a hole transport layer B is formed, wherein the organic matter B is dioxythiophene, carbazole salt and derivatives thereof;
step three, continuing to deposit an organic compound C with the thickness of 5nm, and then co-depositing C and F20nm, wherein the ratio of the organic compound C to the F is 1:0.007, the deposition rate is 1 nm/min, and the substrate temperature is 150 ℃ to form a light-emitting layer C to F; the organic compound C is dodecahydroxyquinoline aluminum; the organic compound F is a dodecahydroxyquinoline-naphthalimide derivative;
step four, continuously depositing an organic compound E with the thickness of 40nm, wherein the deposition rate is 1 nm/min, the substrate temperature is 140 ℃, and an electron transport layer E is formed, and the organic compound E is one or a combination of more of molybdenum oxide, zinc oxide and alkaline earth metal organic compounds;
step five, reducing the temperature of the substrate to room temperature, and depositing 1nm Li2CO3The deposition rate is 1 nm/min; and depositing 100nm of metal aluminum by using a mask plate to form a second electrode, wherein the deposition rate is 50 nm/min, and thus the blue light organic crystal light-emitting diode is obtained.
Example 3:
a red light organic crystal light-emitting diode comprises a first electrode ITO, a conductive coating A, a hole transport layer B, a hole transport layer C, a light-emitting layer C, an electron transport layer E and a second electrode which are sequentially and tightly arranged from bottom to top;
the preparation process comprises the following steps:
step one, spin-coating an organic substance A on the surface of ITO conductive glass to form a conductive coating A, wherein the organic substance A is PEDOT (PSS or molybdenum oxide);
step two, adopting a vacuum evaporation method, wherein the pressure is 3.0 multiplied by 10-4-5.0×10-4Pascal, respectively depositing 0.5nmMoO on the surface of the organic A330-45nm (such as 30 nm) organic matter B, the deposition rate is 0.5 nm/min, the substrate temperature is 170 ℃, and a hole transport layer B is formed, wherein the organic matter B is dioxythiophene, carbazole salt and derivatives thereof;
step three, continuously depositing an organic compound C with the thickness of 15nm, and then co-depositing C and G10nm, wherein the ratio of the organic compound C to the G is 1:0.01, so as to form a light-emitting layer C to G, and the organic compound C is dodecahydroxyquinoline aluminum; the organic compound G is a dodecahydroxyquinoline-naphthalimide derivative; continuing to deposit 40nm of organic compound E; the deposition rate is 1 nm/min, the substrate temperature is 140 ℃, an electron transport layer E is formed, and the organic compound E is one or the combination of more of molybdenum oxide, zinc oxide and alkaline earth metal organic compounds;
step four, reducing the temperature of the substrate to room temperature, and depositing 1nm Li2CO3The deposition rate is 1 nm/min; deposition of 100nm using a maskAnd forming a second electrode Al by using metal aluminum, and obtaining the red light organic crystal light-emitting diode at the deposition rate of 50 nm/min.
The specific numerical values of the basic parameters of the red, green and blue light devices in the above embodiments are summarized and compared, including the starting voltage, the maximum current efficiency, and 1000cd/m2The power efficiency and the maximum external quantum conversion efficiency (EQE) were obtained, and the results are shown in table 1. According to the results in table 1, the novel organic crystal light emitting diode of the scheme realizes the high-efficiency red-blue-green three-color light emission of the organic crystal, solves the problems of instability and serious performance attenuation of the amorphous material, and realizes the preparation of the high-efficiency stable organic light emitting diode device.
TABLE 1
| Red light | Green light | Blue light | |
| Lighting voltage (V) | 1.4~1.6 | 2.0~2.4 | 2.6~3.0 |
| Maximum current efficiency (cd/A) | 53 | 95 | 21 |
| 1000cd/m2Power efficiency Im/W | 40.8 | 69.7 | 12.3 |
| Maximum EQE (%) | 13.3 | 17.2 | 15.1 |
What has been described above are merely some embodiments of the present invention. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the inventive concept thereof, and these changes and modifications can be made without departing from the spirit and scope of the invention.
Claims (10)
1. A novel organic crystal light emitting diode is characterized in that: the LED comprises a first electrode, a conductive coating, a hole transport layer, a luminescent layer, an electron transport layer and a second electrode from bottom to top in sequence;
the light-emitting layer is composed of crystal structures, and the molecules of the crystal structures have molecular planes with conjugated light-emitting characteristics and have a determined orientation direction;
the light-emitting layer is an organic crystal material with molecular level roughness, the thickness of the organic crystal material is 100-130nm, and the surface roughness RMS is less than 2 nm.
2. A novel organic crystal light emitting diode according to claim 1, wherein: the first electrode is made of indium tin oxide conductive glass.
3. A novel organic crystal light emitting diode according to claim 1, wherein: the second electrode is made of silver or aluminum and has a thickness of 100-130 nm.
4. A novel organic crystal light emitting diode according to claim 1, wherein: the thickness of the light-emitting layer is 20-40 nm.
5. A novel organic crystal light emitting diode according to claim 1, wherein: the luminous layer is formed by single component or multi-component blending.
6. A novel organic crystal light emitting diode according to claim 5 wherein: the light-emitting layer comprises one or more of dodecahydroxyquinoline aluminum and derivatives thereof, and dodecahydroxyquinoline-naphthalimide derivatives.
7. A novel organic crystal light emitting diode according to claim 1, wherein: the electron transmission layer is of a single-layer structure or a multi-layer structure which is sequentially arranged from bottom to top, and the thickness of each layer is 5-30 nm.
8. A novel organic crystal light emitting diode according to claim 1, wherein: PSS or molybdenum oxide as conductive polymer, and the thickness of the conductive coating is controlled within 20-40 nm.
9. A novel organic crystal light emitting diode according to claim 1, wherein: the crystal structure in the light-emitting layer has a fixed interplanar spacing and a conjugated structure plane with an orientation perpendicular or parallel to the substrate direction.
10. A method of making a novel organic crystal light emitting diode according to claim 1, wherein: which comprises the following steps:
step one, taking ITO conductive glass as a first electrode, and spin-coating an organic matter A on the surface of the ITO conductive glass to form a conductive coating, wherein the organic matter A is PEDOT (Poly ethylene glycol Ether-Ether), PSS (Polybutylece terephthalate) or molybdenum oxide;
step two, adopting a vacuum evaporation method, wherein the pressure is 3.0 multiplied by 10-4-5.0×10-4Pascal, respectively depositing 0.5nmMoO on the surface of the organic matter A3、3An organic matter B with the thickness of 0-50nm forms a hole transport layer, and the organic matter B is one or a combination of more of dioxythiophene, carbazole salt and derivatives thereof;
depositing an organic compound C of 10-15nm continuously, and then co-depositing the organic compound C and the organic compound D of 15-20nm, wherein the ratio of the organic compound C to the organic compound D is 1:0.005-1:0.01, so as to form a light-emitting layer; the organic compound C and the organic compound D comprise one or more of aluminum dodecahydroxyquinoline and dodecahydroxyquinoline-naphthalimide derivatives;
depositing an organic compound E with the thickness of 40-45nm continuously to form an electron transport layer, wherein the organic compound E is one or a combination of molybdenum oxide, zinc oxide and an alkaline earth metal organic compound;
step five, cooling the temperature of the substrate to room temperature, and depositing 1-1.5nmLi2CO3(ii) a And depositing 100-130nm metal aluminum by using a mask plate to form a second electrode to obtain the novel organic crystal light-emitting diode.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060043361A1 (en) * | 2004-08-25 | 2006-03-02 | Samsung Electronics Co., Ltd. | White light-emitting organic-inorganic hybrid electroluminescence device comprising semiconductor nanocrystals |
| US20060063029A1 (en) * | 2004-05-28 | 2006-03-23 | Samsung Electronics Co., Ltd. | Method for preparing multilayer of nanocrystals, and organic-inorganic hybrid electroluminescence device comprising multilayer of nanocrystals prepared by the method |
| CN108461640A (en) * | 2018-03-16 | 2018-08-28 | 中国科学院长春应用化学研究所 | Crystalline state organic electroluminescent LED and its application |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060063029A1 (en) * | 2004-05-28 | 2006-03-23 | Samsung Electronics Co., Ltd. | Method for preparing multilayer of nanocrystals, and organic-inorganic hybrid electroluminescence device comprising multilayer of nanocrystals prepared by the method |
| US20060043361A1 (en) * | 2004-08-25 | 2006-03-02 | Samsung Electronics Co., Ltd. | White light-emitting organic-inorganic hybrid electroluminescence device comprising semiconductor nanocrystals |
| CN108461640A (en) * | 2018-03-16 | 2018-08-28 | 中国科学院长春应用化学研究所 | Crystalline state organic electroluminescent LED and its application |
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