CN111969074A - Full-black MWT battery piece and preparation method thereof - Google Patents
Full-black MWT battery piece and preparation method thereof Download PDFInfo
- Publication number
- CN111969074A CN111969074A CN202010914161.7A CN202010914161A CN111969074A CN 111969074 A CN111969074 A CN 111969074A CN 202010914161 A CN202010914161 A CN 202010914161A CN 111969074 A CN111969074 A CN 111969074A
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- Prior art keywords
- black
- mwt
- battery piece
- electrode
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000003292 glue Substances 0.000 claims abstract description 17
- 238000001035 drying Methods 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000007650 screen-printing Methods 0.000 claims abstract description 10
- 239000000084 colloidal system Substances 0.000 claims abstract description 7
- 238000007639 printing Methods 0.000 claims description 9
- 239000006229 carbon black Substances 0.000 claims description 3
- 239000003431 cross linking reagent Substances 0.000 claims description 3
- 239000002952 polymeric resin Substances 0.000 claims description 3
- 229920003002 synthetic resin Polymers 0.000 claims description 3
- 239000013008 thixotropic agent Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 241000887125 Chaptalia nutans Species 0.000 description 1
- 241000269913 Pseudopleuronectes americanus Species 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009500 colour coating Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a full black MWT solar cell piece and a preparation method thereof, wherein the full black MWT solar cell piece comprises a silicon wafer; the front surface of the silicon wafer is provided with a front electrode; and the front electrode is covered with a black glue layer. A preparation method of a full-black MWT battery piece is characterized in that after the MWT battery piece is sintered, tested and sorted, a layer of black colloid is printed on a positive electrode of a battery in a screen printing mode, and then the black MWT battery piece is dried through a drying box. The invention only prints a layer of black glue on the positive electrode of the battery piece which is produced well originally, and then dries. The method for producing the all-black battery piece and the assembly has extremely low cost increase and simple process.
Description
Technical Field
The invention relates to a full black MWT battery piece and a preparation method thereof, and belongs to the technical field of photovoltaic cell production.
Background
The MWT battery is characterized in that the MWT battery conducts current collected by the front electrode of the battery piece to the back side through a series of holes distributed on the battery piece, and special slurry is filled in the holes. Meanwhile, the MWT battery component is produced in a back contact mode, the battery pieces are connected through the conductive core plate, and the welding strip does not need to be welded on the front electrode of the battery like a conventional battery. The front appearance of the MWT cell sheet was not changed after fabrication into an assembly.
The prior MWT solar cell module is roughly divided into a white module and a black module in appearance. The white component adopts a white back plate, a white aluminum frame and white EVA, and is white except the battery piece; the black assembly adopts a black back plate, a black aluminum frame and black EVA, and the battery piece is black on the whole.
Although all auxiliary materials (except front high-transmittance glass and transparent EVA) of the MWT black component adopt black materials, the front surface of the battery piece is relatively dark in coating color, and basically black after lamination, the front surface electrode of the battery piece is white, and the main factor that the appearance of the whole component cannot reach full black is provided.
In the prior art, the method for plating the black glaze on the front glass has relatively complex process and cannot achieve the effect of complete black.
Disclosure of Invention
The purpose of the invention is as follows: aiming at the problems and the defects in the prior art, the invention provides the all-black MWT battery piece and the preparation method thereof, so that the all-black MWT battery piece can realize the all-black front side of the MWT battery component, the production process is simple, and the performance of the MWT battery component is not influenced.
The technical scheme is as follows: a full black MWT battery piece comprises a silicon chip; the front surface of the silicon wafer is provided with a front electrode; and the front electrode is covered with a black glue layer.
The front electrode comprises a grid line and an electrode point; and the grid lines and the electrode points are covered with black glue layers.
The black glue layer is printed on the front electrode in a screen printing mode.
A preparation method of a full-black MWT battery piece is characterized in that after the MWT battery piece is sintered, tested and sorted, a layer of black colloid is printed on a positive electrode of a battery in a screen printing mode, and then the black MWT battery piece is dried through a drying box.
The temperature of the drying box is 350 ℃, and the drying time is 25 s.
After the MWT battery piece is sintered, tested and sorted, a layer of black colloid is printed on the grid lines and the electrode points on the front surface of the silicon chip in a screen printing mode.
The weight ratio of the components of the black glue is as follows: 15% of high polymer resin, 25% of carbon black, 30% of thixotropic agent and 30% of crosslinking agent.
When the MWT battery piece is used for producing the assembly, the MWT battery piece is connected on the back through the conductive core plate without welding strips, so that the dried black colloid cannot be damaged after the assembly is manufactured and still adheres to the front electrode, and meanwhile, the black colloid layer cannot influence the interconnection between the battery pieces. Meanwhile, the front surface of the battery piece is coated by adopting a dark-color coating process, and then black component auxiliary materials are used, so that the laminated component has a completely black effect in vision.
Has the advantages that: compared with the prior art, the all-black MWT battery piece and the preparation method thereof provided by the invention have the advantages that no new equipment is required to be added for the existing MWT battery production line; the original battery production process does not need any change. Only a layer of black glue is printed on the positive electrode of the battery piece which is produced well, and then the battery piece is dried. The processes for the required contraposition printing are all the existing mature processes. Therefore, the method for producing the all-black battery piece and the assembly has extremely low additional cost and no difficulty in process.
Drawings
FIG. 1 is a schematic cross-sectional structure diagram of an MWT battery piece in an embodiment of the present invention.
Detailed Description
The present invention is further illustrated by the following examples, which are intended to be purely exemplary and are not intended to limit the scope of the invention, as various equivalent modifications of the invention will occur to those skilled in the art upon reading the present disclosure and fall within the scope of the appended claims.
As shown in fig. 1, the all-black MWT cell comprises a silicon wafer; an aluminum back field made of back aluminum paste 1 and back electrode points of back silver paste 2 are arranged on the back surface 4 of the silicon wafer, a plurality of through holes are formed in the silicon wafer, hole plugging paste 3 is filled in the through holes, and front electrodes formed by front silver paste 6 are arranged on the front surface 5 of the silicon wafer corresponding to the through holes; the front electrode comprises a grid line and an electrode point.
The front electrode is covered with a black glue layer 7. The black glue layer 7 is printed on the front electrode by means of screen printing.
The whole production process flow of the full-black MWT battery piece is as follows: laser drilling, wool making, diffusion, laser SE (selective emitter) -, etching, back polishing, back alumina deposition, back silicon nitride (Maya machine) -, front silicon nitride, back laser grooving, hole blocking printing, drying, positive electrode printing, drying, back electric field printing, drying, positive electrode printing, drying, test sorting, black glue printing and drying.
After the MWT battery piece is sintered, tested and sorted, a positive electrode screen printing plate is arranged on a printing machine table in a screen printing mode, and black glue is laid; and printing a black glue layer 7 on the positive electrode of the battery, and then passing through a drying box with the temperature of 350 ℃ for 25 s.
The weight ratio of the components of the black glue is as follows: 15% of high polymer resin, 25% of carbon black, 30% of thixotropic agent and 30% of crosslinking agent.
After the full black MWT battery piece is produced, a special back contact packaging mode of MWT is adopted to produce a full black component.
Claims (7)
1. A full black MWT battery piece comprises a silicon chip; the front surface of the silicon wafer is provided with a front electrode; the method is characterized in that: and the front electrode is covered with a black glue layer.
2. The all-black MWT cell sheet according to claim 1, characterized in that: the front electrode comprises a grid line and an electrode point; and the grid lines and the electrode points are covered with black glue layers.
3. The all-black MWT cell sheet according to claim 1, characterized in that: the black glue layer is printed on the front electrode in a screen printing mode.
4. A preparation method of a full black MWT battery piece is characterized by comprising the following steps: after the MWT battery piece is sintered, tested and sorted, a layer of black colloid is printed on the electrode on the front side of the battery in a screen printing mode, and then the battery piece is dried through a drying box.
5. The method of preparing an all-black MWT cell sheet according to claim 4, wherein: the temperature of the drying box is 350 ℃, and the drying time is 25 s.
6. The method of preparing an all-black MWT cell sheet according to claim 4, wherein: and after the MWT battery piece is sintered, tested and sorted, printing a layer of black colloid on the grid line and the electrode points on the front surface of the silicon chip in a screen printing mode.
7. The method of preparing an all-black MWT cell sheet according to claim 4, wherein: the weight ratio of the components of the black glue is as follows: 15% of high polymer resin, 25% of carbon black, 30% of thixotropic agent and 30% of crosslinking agent.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202010914161.7A CN111969074A (en) | 2020-09-03 | 2020-09-03 | Full-black MWT battery piece and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN202010914161.7A CN111969074A (en) | 2020-09-03 | 2020-09-03 | Full-black MWT battery piece and preparation method thereof |
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CN202010914161.7A Pending CN111969074A (en) | 2020-09-03 | 2020-09-03 | Full-black MWT battery piece and preparation method thereof |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5352479A (en) * | 1990-07-31 | 1994-10-04 | Nfe Co., Ltd. | Method for forming an electrode |
US5807440A (en) * | 1995-06-20 | 1998-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Photovoltaic device |
CN101593570A (en) * | 2008-05-29 | 2009-12-02 | 四川虹欧显示器件有限公司 | The plasma display of black conductive slurry and this slurry of use |
US20140360567A1 (en) * | 2011-08-05 | 2014-12-11 | Solexel, Inc. | Back contact solar cells using aluminum-based alloy metallization |
CN205881924U (en) * | 2016-07-29 | 2017-01-11 | 浙江宝利特新能源股份有限公司 | Two glass battery pack |
CN108155249A (en) * | 2017-12-15 | 2018-06-12 | 南京日托光伏科技股份有限公司 | A kind of MWT front electrode of solar battery and preparation method thereof |
CN209561432U (en) * | 2018-12-24 | 2019-10-29 | 江苏日托光伏科技股份有限公司 | A kind of completely black solar double-glass assemblies of back-contact |
-
2020
- 2020-09-03 CN CN202010914161.7A patent/CN111969074A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5352479A (en) * | 1990-07-31 | 1994-10-04 | Nfe Co., Ltd. | Method for forming an electrode |
US5807440A (en) * | 1995-06-20 | 1998-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Photovoltaic device |
CN101593570A (en) * | 2008-05-29 | 2009-12-02 | 四川虹欧显示器件有限公司 | The plasma display of black conductive slurry and this slurry of use |
US20140360567A1 (en) * | 2011-08-05 | 2014-12-11 | Solexel, Inc. | Back contact solar cells using aluminum-based alloy metallization |
CN205881924U (en) * | 2016-07-29 | 2017-01-11 | 浙江宝利特新能源股份有限公司 | Two glass battery pack |
CN108155249A (en) * | 2017-12-15 | 2018-06-12 | 南京日托光伏科技股份有限公司 | A kind of MWT front electrode of solar battery and preparation method thereof |
CN209561432U (en) * | 2018-12-24 | 2019-10-29 | 江苏日托光伏科技股份有限公司 | A kind of completely black solar double-glass assemblies of back-contact |
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Application publication date: 20201120 |