CN111968940A - Laser annealing copper layer structure heat treatment method and linear integration laser annealing device - Google Patents
Laser annealing copper layer structure heat treatment method and linear integration laser annealing device Download PDFInfo
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- CN111968940A CN111968940A CN202010830719.3A CN202010830719A CN111968940A CN 111968940 A CN111968940 A CN 111968940A CN 202010830719 A CN202010830719 A CN 202010830719A CN 111968940 A CN111968940 A CN 111968940A
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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Abstract
The invention discloses a heat treatment method for a laser annealing copper layer structure. The invention also discloses a linear integration laser annealing device which comprises a laser, a mobile platform device, a laser linear integration prism and an operating system. The laser annealing heat treatment method and the linear integration laser annealing device can effectively improve the integrity of crystal grains of the copper film, reduce the impurity content of the copper film, and can locally heat to adapt to more precise preparation scenes to obtain a columnar crystal-like copper structure or a columnar crystal structure growing along the laser annealing scanning direction, and the obtained columnar crystal-like copper structure or columnar crystal structure has larger crystal grain size and excellent electrical property, and optimizes the electrical property of a copper interconnection line.
Description
Technical Field
The invention belongs to the technical field of copper interconnection in electronic packaging, and particularly relates to a heat treatment method for a laser annealing copper layer structure and a linear integration laser annealing device.
Background
High-end electronic manufacturing technologies, represented by integrated circuit (chip) manufacturing and packaging technologies, are the hardware base and core technologies for implementing the fourth generation of industrial revolution, in which a vertical copper interconnection process is one of the key technologies in high-end electronic manufacturing to implement vertical interconnection of transistors in a chip and vertical interconnection between devices and chips in a packaging system. In the electronics industry, there are high demands on interconnect materials. To meet the performance and speed requirements, it requires materials with low resistance capacitance. Aluminum materials have been able to meet the interconnect requirements of very large scale integrated circuits before the mid 90's of the 20 th century, but as integrated circuits continue to evolve, feature sizes become smaller and smaller, and higher requirements for interconnect materials are also being placed. Based on this situation, copper has become a more suitable interconnect material for the rapidly evolving integrated circuits instead of aluminum. This is because copper has higher resistivity, better heat dissipation, and better electromigration and stress migration resistance than aluminum materials. The resistivity of copper is 1.67 mu omega cm, the resistivity of aluminum is 2.65 mu omega cm, and the resistivity can be reduced to 63 percent by adopting the copper material, so that the phenomenon of capacitance resistance delay (RC delay) of an interconnection line can be relieved on one hand, and the power consumption of an integrated circuit can be obviously reduced on the other hand.
Damascus vertical copper interconnect technology has become a hot spot for the research of high-density packaging structures. The damascene technique can be roughly summarized as follows: depositing a dielectric layer → photoetching and etching to form a through hole and a groove → depositing a tantalum barrier layer and a copper seed layer in the through hole and the groove in sequence → electroplating copper to fill the through hole and the groove → chemical mechanical polishing to remove excessive metal → bonding. Electrodeposited damascene copper deposits are unstable and recrystallize at room temperature, a phenomenon known as self-annealing. Self-annealing can last hours, days, or even weeks after electrodeposition is complete. In the self-annealing process, the microstructure of the copper coating can be obviously changed, the copper coating gradually merges and grows from the initial fine grains to form more complete large grains, the coating texture, the residual stress and the like can be changed in a series, the performance of the copper interconnection line is changed along with the change, and the resistivity of the coating can be gradually reduced.
Although the resistivity of the copper deposit can be reduced by the self-annealing process, it lasts longer and is therefore generally subjected to a heat treatment to accelerate the recrystallization process of the deposit and to obtain better properties. Annealing conditions such as temperature, time, and temperature rise and drop during annealing have a significant influence on the electrical properties of the copper plating by affecting the grain boundary density and impurity distribution of the plating. The heat treatment of the device also easily causes vaporization of impurities such as C, S, N, which affects the reliability of the device.
Although the above techniques reduce RC delay in integrated circuits, the shrinking device size and the adoption of high frequency transmission signals are still insufficient in performance due to the enhancement of skin effect as circuit size continues to decrease.
Disclosure of Invention
The invention provides a heat treatment method for a laser annealing copper layer structure, which is characterized in that a columnar crystal copper structure growing along the laser annealing scanning direction is prepared on the surface of a sputtered copper layer or a basic electroplated copper coating by utilizing a linear integration laser annealing method. The method optimizes the prior art, has simple steps, and the obtained columnar crystal copper structure has larger grain size and outstanding conductivity.
The invention provides a linear integration laser annealing device which can be used for preparing a copper coating with stronger integrity, lower impurity content and more excellent electrical property by linear integration laser and can be locally heated to adapt to more precise preparation scenes.
The technical scheme of the invention is as follows:
a laser annealing copper layer structure heat treatment method is characterized in that a copper layer is scanned by linearly shaping laser beam spots, and the copper layer is an electroplated copper plating layer or a sputtered copper seed layer. The electroplated copper plating layer or the sputtered copper seed layer grows into a columnar crystal-like structure or a columnar crystal structure with the grain size larger than that of the copper layer subjected to annealing treatment, so that the impurity content of the copper layer is reduced, and the electrical property is optimized.
Preferably, the linear shaping laser beam spot is a single-line laser beam spot, and a single path of a scanning path of the linear shaping laser beam spot is rectangular.
Preferably, the linear shaped laser beam spot scanning mode is a repetitive scanning mode. The repeated mode is scanning, stopping and returning to the original position, and circulating. The number of repeated scans was adjusted based on the time taken for the sample grains to complete growth.
Preferably, the linear shaped laser beam spot scanning mode should be repeated at a certain time interval in a single pass. After one-way scanning is finished, standing and cooling are carried out for a period of time, then next scanning is carried out, the interval time is adjusted according to the size of the copper layer of the sample, and the sample is cooled to room temperature generally.
Preferably, the area of the scanning path of the linearly shaped laser beam spot coincides with the area of the copper layer.
Preferably, the scanned copper layer of the linearly shaped laser beam spot has a columnar-like crystal structure or a columnar crystal structure.
The invention also provides a linear integration laser annealing device, which comprises a laser, a mobile platform device, a laser linear integration prism and an operating system,
the laser is used for emitting laser;
the laser linear integration prism is connected with the laser and integrates the laser emitted by the laser into a single-line linear laser;
the mobile platform device is used for bearing the electroplated sample and driving the sample to translate;
the operating system is connected with the mobile platform device and is used for controlling the displacement of the mobile platform device.
Preferably, the mobile platform device comprises a sample table, a protective cover, a displacement coordinate axis and an optical platform, wherein the protective cover is inserted in the sample table, the sample platform is fixed on the displacement coordinate axis, and the displacement coordinate axis is fixed on the optical platform.
Preferably, the device further comprises a protective atmosphere system, and the protective atmosphere gas outlet is positioned right above the electroplated sample.
Preferably, the linearly integrated laser annealing device is used in the heat treatment method for laser annealing the copper layer structure according to claim 1.
Compared with the prior art, the invention has the following beneficial effects:
the laser annealing heat treatment method can effectively improve the integrity of crystal grains of the copper film, reduce the impurity content of the copper film, and can locally heat to adapt to more precise preparation scenes, so that a columnar crystal copper-like structure growing along the laser annealing scanning direction is obtained, the obtained columnar crystal copper-like structure has larger crystal grain size and excellent electrical property, and the electrical property of the copper interconnection line is optimized.
The linear integration laser annealing device can control the scanning speed and the scanning range through the operating system, the laser linear integration prism integrates laser into a single linear laser beam spot to irradiate on the sample table, and the linear integration laser annealing device improves the integrity of copper coating crystal grains, reduces the impurity content of a coating, optimizes the electrical property and can be suitable for a plurality of precise preparation scenes.
Of course, it is not necessary for any product in which the invention is practiced to achieve all of the above-described advantages at the same time.
Drawings
FIG. 1 is a schematic view of a linear integrated laser scanning scheme according to the present invention; wherein, 1 is the copper interconnection line after integrating the laser scanning, 2 is the copper interconnection line which is not integrated with the laser scanning after electroplating;
FIG. 2 is a schematic diagram of the shape of the interconnection line grains drawn at A in FIG. 1;
FIG. 3 is a schematic diagram of the shape of the grains of the interconnection line led out from B in FIG. 1;
FIG. 4 is a diagram of a linearly integrated laser annealing apparatus according to embodiment 4 of the present invention;
fig. 5 is a top view of the moving platform device of fig. 4.
Detailed Description
The invention will be further illustrated with reference to the following specific examples. It should be understood that these examples are only for illustrating the present invention and are not intended to limit the scope of the present invention. In practice, the invention will be understood to cover all modifications and variations of this invention provided they come within the scope of the appended claims.
For a better illustration of the invention, the following detailed description of the invention is given in conjunction with the accompanying drawings.
A laser annealing copper layer structure heat treatment method is characterized in that a copper layer is scanned by linearly shaping laser beam spots, and the copper layer is an electroplated copper plating layer or a sputtered copper seed layer.
The schematic diagram of the linear integration laser scanning mode is shown in fig. 1, and the linear integration laser scanning enables the electroplated nano-scale crystal grains to grow into micro-scale columnar crystals; the schematic diagram of the morphology of the interconnection line grains led out at a in fig. 2 shows a schematic diagram of micron-sized columnar crystals; the interconnect line grain morphology plot drawn at B in figure 3 shows a nanoscale grain plot.
Example 1
In this embodiment, the atmosphere in which the laser beam spot is scanned comprises air or oxygen, the laser wavelength range is 808nm, the laser beam spot size is 2cm x 0.1cm, and the energy density is 250J/cm2。
The preparation steps of the basic electroplated copper coating are simplified and are all conventional operations in the Damascus process.
Therefore, the operation of this example is as follows:
(1) and preparing a sample to be plated. And cutting a 2cm by 2cm silicon wafer, and depositing a Ta/TaN barrier layer and a 150nm copper seed layer on the surface for electroplating.
(2) And (4) preparing a plating solution. Plating solution containing Cu2+40g/L，SO42-10g/L，Cl-50ppm, 20ppm of sodium polydithio-dipropyl sulfonate, 200ppm of polyethylene glycol and 10ppm of jiannan green. The anode used for electroplating is a copper phosphor plate.
(3) And activating the plating solution. And (4) activating the plating solution with a small current by using the copper sheet which is not pasted with the silicon chip. The copper sheet needs to be subjected to anode degreasing under the current density of 4ASD before being put into the plating solution. The current density during activation was 0.0025ASD, and the activation time was 30min.
(4) And (4) electroplating. The silicon wafer also needs to be degreased by an anode of the degreasing 4ASD before electroplating. The current density during electroplating was 9ASD for 1min, and the thickness of the copper plating layer was about 2 μm.
(5) And (4) processing the sample after electroplating. After electroplating, the sample needs to be washed and dried in time, so that surface oxidation is avoided.
(6) And (3) carrying out linear laser beam spot single-pass scanning on the electroplated copper coating, wherein the scanning speed is 0.00001m/s, the scanning path is rectangular, and the size of the scanning path is the same as that of the basic copper coating.
(7) And (5) standing and cooling. The time is 1 min.
(8) Repeating the steps (6) and (7) 15 times each.
The EBSD test results show that the average grain diameter of the obtained copper plating layer is about 1.348 mu m, and the maximum grain size is 4.122 mu m. The average grain aspect ratio was 1.817 and the maximum grain aspect ratio was 3.254.
Example 2
In this embodiment, the atmosphere in which the laser beam spot is scanned comprises air or oxygen, the laser wavelength range is 808nm, the laser beam spot size is 2cm x 0.1cm, and the energy density is 500J/cm2。
The preparation steps of the basic electroplated copper coating are simplified and are all conventional operations in the Damascus process.
Therefore, the operation of this example is as follows:
(1) and preparing a sample to be plated. And cutting a 2cm by 2cm silicon wafer, and depositing a Ta/TaN barrier layer and a 150nm copper seed layer on the surface for electroplating.
(2) And (4) preparing a plating solution. Plating solution containing Cu2+40g/L，SO42-10g/L，Cl-50ppm, 20ppm of sodium polydithio-dipropyl sulfonate, 200ppm of polyethylene glycol and 10ppm of jiannan green. The anode used for electroplating is a copper phosphor plate.
(3) And activating the plating solution. And (4) activating the plating solution with a small current by using the copper sheet which is not pasted with the silicon chip. The copper sheet needs to be subjected to anode degreasing under the current density of 4ASD before being put into the plating solution. The current density during activation was 0.0025ASD, and the activation time was 30min.
(4) And (4) electroplating. The silicon wafer also needs to be degreased by an anode of the degreasing 4ASD before electroplating. The current density during electroplating was 9ASD for 1min, and the thickness of the copper plating layer was about 2 μm.
(5) And (4) processing the sample after electroplating. After electroplating, the sample needs to be washed and dried in time, so that surface oxidation is avoided.
(6) And (3) carrying out linear laser beam spot single-pass scanning on the electroplated copper coating, wherein the scanning speed is 0.00001m/s, the scanning path is rectangular, and the size of the scanning path is the same as that of the basic copper coating.
(7) And (5) standing and cooling. The time is 3 min.
(8) Repeating the steps (6) and (7) 7 times each. The EBSD test results show that the average grain diameter of the obtained copper plating layer is about 1.389 mu m. The maximum grain size was 10.012 μm. The average grain aspect ratio was 1.809, and the maximum grain aspect ratio was 2.023.
Example 3
In this embodiment, the atmosphere in which the laser beam spot is scanned comprises air or oxygen, the laser wavelength range is 808nm, the laser beam spot size is 2cm x 0.1cm, and the energy density is 1000J/cm2。
The preparation steps of the basic electroplated copper coating are simplified and are all conventional operations in the Damascus process.
Therefore, the operation of this example is as follows:
(1) and preparing a sample to be plated. And cutting a 2cm by 2cm silicon wafer, and depositing a Ta/TaN barrier layer and a 150nm copper seed layer on the surface for electroplating.
(2) And (4) preparing a plating solution. Plating solution containing Cu2+40g/L，SO42-10g/L，Cl-50ppm, 20ppm of sodium polydithio-dipropyl sulfonate, 200ppm of polyethylene glycol and 10ppm of jiannan green. The anode used for electroplating is a copper phosphor plate.
(3) And activating the plating solution. And (4) activating the plating solution with a small current by using the copper sheet which is not pasted with the silicon chip. The copper sheet needs to be subjected to anode degreasing under the current density of 4ASD before being put into the plating solution. The current density during activation was 0.0025ASD, and the activation time was 30min.
(4) And (4) electroplating. The silicon wafer also needs to be degreased by an anode of the degreasing 4ASD before electroplating. The current density during electroplating was 9ASD for 1min, and the thickness of the copper plating layer was about 2 μm.
(5) And (4) processing the sample after electroplating. After electroplating, the sample needs to be washed and dried in time, so that surface oxidation is avoided.
(6) And (3) carrying out linear laser beam spot single-pass scanning on the electroplated copper coating, wherein the scanning speed is 0.00001m/s, the scanning path is rectangular, and the size of the scanning path is the same as that of the basic copper coating.
(7) And (5) standing and cooling. The time is 5 min.
(8) Repeating the steps (6) and (7) 3 times each. The EBSD test results show that the average grain diameter of the obtained copper plating is about 1.408 μm, and the maximum grain size is 8.348 μm. The average grain aspect ratio was 1.829 and the maximum grain aspect ratio was 2.484.TOF-SIMS test results show that the impurity content of example 4 was reduced by 44.69% from that of example 1.
Comparative example 1
The preparation steps of the basic electroplated copper coating are simplified and are all conventional operations in the Damascus process.
Therefore, the operation of this example is as follows:
(1) and preparing a sample to be plated. And cutting a 2cm by 2cm silicon wafer, and depositing a Ta/TaN barrier layer and a 150nm copper seed layer on the surface for electroplating.
(2) And (4) preparing a plating solution. Plating solution containing Cu2+40g/L，SO42-10g/L，Cl-50ppm, 20ppm of sodium polydithio-dipropyl sulfonate, 200ppm of polyethylene glycol and 10ppm of jiannan green. The anode used for electroplating is a copper phosphor plate.
(3) And activating the plating solution. And (4) activating the plating solution with a small current by using the copper sheet which is not pasted with the silicon chip. The copper sheet needs to be subjected to anode degreasing under the current density of 4ASD before being put into the plating solution. The current density during activation was 0.0025ASD, and the activation time was 30min.
(4) And (4) electroplating. The silicon wafer also needs to be degreased by an anode of the degreasing 4ASD before electroplating. The current density during electroplating was 9ASD for 1min, and the thickness of the copper plating layer was about 2 μm.
(5) And (4) processing the sample after electroplating. After electroplating, the sample needs to be washed and dried in time, so that surface oxidation is avoided.
(6) And annealing the electroplated copper coating at 175 ℃ for 15 min. The EBSD test results show that the average grain diameter of the obtained copper plating layer is about 1.04 μm, and the maximum grain size is 2.773 μm. The average grain aspect ratio was 1.59 and the maximum grain aspect ratio was 1.602.
In conclusion, the invention provides a linear integration laser annealing electroplated copper coating structure and a preparation method thereof, which are suitable for optimizing the Damascus process, can effectively improve the grain size of the electroplated copper coating, prepare a columnar crystal-like copper structure growing along the laser annealing scanning direction, and optimize the electrical property of the copper coating. Of course, the present invention is applicable to other scenarios, such as other precision copper plating requiring laser annealing.
Example 4
Referring to fig. 4 and 5, the present invention provides a linear integration laser annealing apparatus, which includes a laser 10, a moving stage apparatus 20, a laser linear integration prism 30, an operating system 40, and a protective atmosphere system 50. The moving platform device 2 comprises a sample stage 201, a protective cover 202, a displacement coordinate axis 203 and an optical platform 204. The protective cover 202 is inserted on the sample stage 201, the sample stage 201 is fixed on the displacement coordinate axis 203, and the displacement coordinate axis 203 is fixed on the optical stage 204.
In use, the operating system 30 is connected to the mobile platform device 20, and the scanning speed and the scanning range are set by software, such as software for controlling the displacement direction, speed, and range of the mobile platform device 20. The sample is placed on the sample table 201, the light outlet of the laser 10 is connected with the laser linear integration prism 30 through an optical fiber, the laser linear integration prism 30 is fixed on the optical platform 204 through an optical support, and the laser linear integration prism 30 integrates the laser into a linear laser beam spot to irradiate on the sample. The incident angle of the laser is adjusted to reflect the reflected laser light on the protective cover 202, so that the laser light is prevented from being reflected to other places to cause accidents. The air duct is fixed on the optical platform 204 through a bracket, and the air outlet of the air duct is positioned right above the sample stage, so that the oxidation of the sample in the scanning process is prevented. By linearly integrating the laser annealing device and the laser annealing system, the integrity of the crystal grains of the copper coating is improved, the impurity content of the coating is reduced, and the electrical property is optimized.
The linearly integrated laser annealing apparatus of this example was used in the laser annealed copper layer structure heat treatment method and other precision fabrication scenarios of examples 1-3.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (10)
1. A heat treatment method for a laser annealing copper layer structure is characterized in that a copper layer is scanned through linear shaping of laser beam spots, and the copper layer is an electroplated copper plating layer or a sputtered copper seed layer.
2. The method of claim 1, wherein the linearly shaped laser beam spot is a single line laser beam spot and the scanning path of the linearly shaped laser beam spot is a single pass rectangular.
3. The method of claim 1, wherein the scanning of the linear shaped laser beam spot is a repetitive scan.
4. The method of claim 3, wherein the linear shaped laser beam spot scanning is repeated at a time interval from a single pass of the process.
5. The method of claim 1, wherein an area of a scanning path of the linearly shaped laser beam spot coincides with an area of the copper layer.
6. The method of heat treating a laser annealed copper layer structure according to any of claims 1-5, wherein the scanned copper layer of the linearly shaped laser beam spot has a columnar grain-like structure or a columnar grain structure.
7. A linear integration laser annealing device is characterized in that the device comprises a laser, a mobile platform device, a laser linear integration prism and an operating system,
the laser is used for emitting laser;
the laser linear integration prism is connected with the laser, and integrates the emitted laser into single-line linear laser;
the mobile platform device is used for bearing the electroplated sample and driving the sample to translate;
the operating system is connected with the mobile platform device and is used for controlling the displacement of the mobile platform device.
8. The linear integration laser annealing device of claim 7, wherein the moving platform device comprises a sample stage, a protective cover, a displacement coordinate axis, and an optical platform, the protective cover is inserted on the sample stage, the sample stage is fixed on the displacement coordinate axis, and the displacement coordinate axis is fixed on the optical platform.
9. The linear integrated laser annealing apparatus according to claim 7, further comprising a protective atmosphere system, wherein the protective atmosphere gas outlet is located directly above the sample.
10. The linearly integrated laser annealer of claim 7, wherein the linearly integrated laser annealer is used in the laser annealed copper layer structure heat treatment process of claim 1.
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| KR20000056452A (en) * | 1999-02-22 | 2000-09-15 | 윤종용 | method of forming copper wiring in semiconductor device |
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| US20150060421A1 (en) * | 2013-08-30 | 2015-03-05 | Hitachi Information & Telecommunication Engineering, Ltd. | Laser annealing apparatus and laser annealing method |
| US20160086832A1 (en) * | 2012-06-11 | 2016-03-24 | Ultratech, Inc. | Laser annealing systems and methods with ultra-short dwell times |
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2020
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000056452A (en) * | 1999-02-22 | 2000-09-15 | 윤종용 | method of forming copper wiring in semiconductor device |
| CN1723097A (en) * | 2002-04-18 | 2006-01-18 | 应用材料有限公司 | Thermal flux processing by scanning electromagnetic radiation |
| US20070032095A1 (en) * | 2005-08-08 | 2007-02-08 | Applied Materials, Inc. | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer |
| KR20080029930A (en) * | 2006-09-29 | 2008-04-03 | 후지필름 가부시키가이샤 | Process and system for laser annealing and laser-annealed semiconductor film |
| US20160086832A1 (en) * | 2012-06-11 | 2016-03-24 | Ultratech, Inc. | Laser annealing systems and methods with ultra-short dwell times |
| US20150060421A1 (en) * | 2013-08-30 | 2015-03-05 | Hitachi Information & Telecommunication Engineering, Ltd. | Laser annealing apparatus and laser annealing method |
| US20170345738A1 (en) * | 2016-05-27 | 2017-11-30 | International Business Machines Corporation | Advanced through substrate via metallization in three dimensional semiconductor integration |
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