CN111965129A - Method and device for measuring interstitial oxygen content of monocrystalline silicon - Google Patents
Method and device for measuring interstitial oxygen content of monocrystalline silicon Download PDFInfo
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 155
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 89
- 239000001301 oxygen Substances 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000001354 calcination Methods 0.000 claims abstract description 47
- 230000001681 protective effect Effects 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims abstract description 23
- 238000005520 cutting process Methods 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
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- 238000001514 detection method Methods 0.000 claims description 8
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- 239000010703 silicon Substances 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 12
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- 230000008569 process Effects 0.000 description 9
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- 239000001569 carbon dioxide Substances 0.000 description 6
- 229910002091 carbon monoxide Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910004014 SiF4 Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
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- 229910052681 coesite Inorganic materials 0.000 description 2
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- 229910052906 cristobalite Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 2
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- 239000000377 silicon dioxide Substances 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
- G01N2021/3568—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor applied to semiconductors, e.g. Silicon
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
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Abstract
The invention provides a method and a device for measuring the interstitial oxygen content of monocrystalline silicon, belonging to the technical field of semiconductors. A method of measuring interstitial oxygen content of single crystal silicon, comprising: cutting a monocrystalline silicon sample into monocrystalline silicon sample blocks with fixed sizes; forming a protective film covering the surface of the monocrystalline silicon sample block, wherein the protective film does not contain oxygen; and calcining the monocrystalline silicon sample block, and detecting gas obtained by calcining to obtain the oxygen content of the monocrystalline silicon sample block. The method can effectively improve the accuracy of the data of the oxygen content.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method and a device for measuring the interstitial oxygen content of monocrystalline silicon.
Background
In the process of large-size semiconductor grade monocrystalline silicon wafers, oxygen is decomposed from a quartz crucible and enters a silicon rod to occupy the gap position of a monocrystalline silicon lattice. Due to the segregation mechanism, the distribution of impurities is determined by their segregation coefficient in the melt during growth of the melt, which is <1 for oxygen in silicon, which tends to aggregate towards solid silicon during crystal growth. The distribution of oxygen in the axial direction of the ingot is gradually reduced from the head to the tail, while the distribution in the radial direction is determined by the shape of the solid-liquid interface.
For the fabrication of silicon ingots and wafers, it is important to know the oxygen distribution at the interstitial sites within the silicon ingot, since this impurity causes many defects when the ingot is cooled, or during subsequent fabrication of semiconductor devices. Especially at temperatures between 350 ℃ and 500 ℃, oxygen formation is called thermal donor, which affects the electrical properties of the material by making free electrons. At higher temperatures, oxygen forms precipitates that trap metallic impurities present in the silicon, which can cause an intrinsic gettering effect. Finally, for photovoltaic applications, high oxygen concentrations cause performance degradation, especially because of the conversion efficiency of boron-based photovoltaic cells under light exposure due to boron-oxygen compound activation. The concentration of oxygen atoms in the silicon single crystal in interstitial form affects the mechanical properties of the silicon single crystal wafer in addition to the formation of micro-defects in the crystal, and therefore the concentration (content) of oxygen in the silicon single crystal and the distribution of oxygen concentration are important parameters for characterizing the intrinsic quality of the crystal.
The methods for detecting oxygen content are FTIR (fourier transform infrared detection) and GFA (gas phase fusion analysis), which are the most commonly used methods, and the GFA method is used to detect the total oxygen content in silicon and a sample that cannot be detected by FTIR. However, in the process of detecting GFA, in the process of placing the sample into a crucible for calcination after the sample is washed, the waiting time cannot be accurately controlled, and during this time, the sample is oxidized, and this part of oxygen is calculated from the oxygen content of the sample, resulting in an error in the final result. On one hand, the oxygen content of the sample is increased, and the correct evaluation on the quality of the silicon wafer is influenced; on the other hand, due to the uncertainty of the waiting time, the oxidation degree of the surface of the sample is inconsistent, so that the inaccuracy of the subsequent multi-sample data correction is caused, and finally the evaluation of the quality of the silicon wafer is caused.
Disclosure of Invention
The invention aims to provide a method and a device for measuring the interstitial oxygen content of monocrystalline silicon, which can effectively improve the accuracy of the data of the oxygen content.
To solve the above technical problem, embodiments of the present invention provide the following technical solutions:
in one aspect, an embodiment of the present invention provides a method for measuring interstitial oxygen content of monocrystalline silicon, including:
cutting a monocrystalline silicon sample into monocrystalline silicon sample blocks with fixed sizes;
forming a protective film covering the surface of the monocrystalline silicon sample block, wherein the protective film does not contain oxygen;
and calcining the monocrystalline silicon sample block, and detecting gas obtained by calcining to obtain the oxygen content of the monocrystalline silicon sample block.
In some embodiments, before forming the protective film covering the surface of the single-crystal silicon sample block, the method further comprises:
and cleaning the monocrystalline silicon sample block, and removing an oxide film on the surface of the monocrystalline silicon sample block.
In some embodiments, the monocrystalline silicon sample block is cleaned with HF.
In some embodiments, calcining the single crystal silicon sample block comprises:
and putting the monocrystalline silicon sample block into a graphite crucible for calcining.
In some embodiments, detecting the gas resulting from the calcining comprises:
and detecting the gas obtained by calcining through an infrared detector to obtain the oxygen content of the monocrystalline silicon sample block.
In some embodiments, the protective film is paraffin.
The embodiment of the invention also provides a device for measuring the interstitial oxygen content of monocrystalline silicon, which comprises:
the cutting unit is used for cutting the monocrystalline silicon sample into monocrystalline silicon sample blocks with fixed sizes;
a processing unit for forming a protective film covering the surface of the monocrystalline silicon sample block, the protective film being free of oxygen;
the calcining unit is used for calcining the monocrystalline silicon sample block;
and the detection unit is used for detecting the gas obtained by calcination to obtain the oxygen content of the monocrystalline silicon sample block.
In some embodiments, the apparatus further comprises:
and the cleaning unit is used for cleaning the monocrystalline silicon sample block obtained after cutting and removing the oxide film on the surface of the monocrystalline silicon sample block.
In some embodiments, the calcining unit is specifically configured to place the monocrystalline silicon sample block into a graphite crucible for calcining.
In some embodiments, the detection unit is specifically configured to detect the gas obtained by calcination by an infrared detector, so as to obtain the oxygen content of the monocrystalline silicon sample block.
The embodiment of the invention has the following beneficial effects:
among the above-mentioned scheme, after the monocrystalline silicon sample cuts into the monocrystalline silicon sample piece of fixed dimension, form the protection film on cladding monocrystalline silicon sample piece surface, the protection film does not contain the oxygen element, the protection film can prevent that monocrystalline silicon sample piece from being oxidized, no matter how long is placed like this, monocrystalline silicon sample piece also can not be oxidized, oxygen content in the monocrystalline silicon sample piece also can not change, later calcine monocrystalline silicon sample piece, detect the gas that obtains calcining, can obtain the oxygen content of monocrystalline silicon sample piece. Through the technical scheme of this embodiment, can effectively improve the accuracy of oxygen content data in the monocrystalline silicon sample piece, guarantee to carry out correct evaluation to silicon chip quality to can guarantee the uniformity of error when carrying out multiple sample test.
Drawings
FIG. 1 is a schematic view showing a process for measuring the interstitial oxygen content of single crystal silicon according to the related art;
FIG. 2 is a schematic view of a process for measuring interstitial oxygen content of single crystal silicon according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an apparatus for measuring the interstitial oxygen content of single crystal silicon according to an embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
As shown in fig. 1, the related art, when measuring the interstitial oxygen content of single-crystal silicon using GFA (gas phase melting analysis), performs the following steps:
step 101: cutting a monocrystalline silicon sample into monocrystalline silicon sample blocks with fixed sizes;
step 102: cleaning a monocrystalline silicon sample block;
step 103: placing the cleaned monocrystalline silicon sample block into a graphite crucible, and calcining the graphite crucible;
o in silicon2+C＝CO+CO2I.e., oxygen in the monocrystalline silicon sample block is reduced to carbon monoxide and carbon dioxide by the carbon in the graphite.
Step 104: and detecting the gas obtained by calcining to obtain the oxygen content of the monocrystalline silicon sample block.
The amount of carbon monoxide and carbon dioxide is detected by an infrared detector, and the oxygen content can be finally calculated.
The oxygen content is an important parameter of the silicon wafer, so that the accurate acquisition of the oxygen content is very important.
However, in the GFA test process, in the process of placing the single crystal silicon sample block into a crucible for calcination after being cleaned, since the waiting time cannot be accurately controlled, the single crystal silicon sample block is oxidized during the waiting time, and the oxygen content of the single crystal silicon sample block is calculated, which results in an error in the final result. On one hand, the oxygen content of the monocrystalline silicon sample block is increased, and the correct evaluation on the quality of the silicon wafer is influenced; on the other hand, due to the uncertainty of the waiting time, the oxidation degree of the surface of the monocrystalline silicon sample block is inconsistent, so that the inaccuracy of the subsequent correction of the multi-sample data is caused, and the evaluation of the quality of the silicon wafer is finally caused.
In order to solve the above problems, embodiments of the present invention provide a method and an apparatus for measuring an interstitial oxygen content of monocrystalline silicon, which can effectively improve accuracy of data of the oxygen content.
The embodiment of the invention provides a method for measuring the interstitial oxygen content of monocrystalline silicon, which comprises the following steps of:
step 201: cutting a monocrystalline silicon sample into monocrystalline silicon sample blocks with fixed sizes;
in this step, the single crystal silicon sample can be cut into single crystal silicon sample pieces of a desired size and shape.
Step 202: cleaning the monocrystalline silicon sample block, and removing an oxide film on the surface of the monocrystalline silicon sample block;
the purpose of cleaning is to wash away the oxide film on the surface of the monocrystalline silicon sample block and ensure the accuracy of detection. Specifically, the single crystal silicon sample block may be cleaned with HF. The cleaning process is as follows:
SiO2+2HF＝SiF4+2H2O。
step 203: forming a protective film covering the surface of the monocrystalline silicon sample block, wherein the protective film does not contain oxygen;
in a specific example, the protective film can adopt paraffin, the components of the paraffin are carbon and hydrogen, and oxygen is not contained, so that the monocrystalline silicon sample block can be prevented from being oxidized; meanwhile, the paraffin has a low melting point, so that on one hand, the operation is easy when a protective film for coating the surface of the monocrystalline silicon sample block is formed, and on the other hand, the paraffin is melted and volatilized before the temperature reaches the melting point of silicon when the monocrystalline silicon sample block is calcined subsequently, so that the test result cannot be influenced. Of course, the protective film of the present embodiment is not limited to paraffin, and other materials that do not contain oxygen and have a melting point lower than that of silicon may be used.
Step 204: calcining the monocrystalline silicon sample block;
in some embodiments, calcining the single crystal silicon sample block comprises: placing the cleaned monocrystalline silicon sample block into a graphite crucible, and calcining the graphite crucible;
o in silicon2+C＝CO+CO2I.e., oxygen in the monocrystalline silicon sample block is reduced to carbon monoxide and carbon dioxide by the carbon in the graphite.
Step 205: and detecting the gas obtained by calcining to obtain the oxygen content of the monocrystalline silicon sample block.
In some embodiments, detecting the gas resulting from the calcining comprises: and detecting the gas obtained by calcining through an infrared detector to obtain the oxygen content of the monocrystalline silicon sample block. Specifically, the oxygen content can be finally calculated by detecting the amounts of carbon monoxide and carbon dioxide by an infrared detector.
In this embodiment, after the monocrystalline silicon sample is cut into the monocrystalline silicon sample piece of fixed size, form the protection film on cladding monocrystalline silicon sample piece surface, the protection film does not contain the oxygen element, and the protection film can prevent that monocrystalline silicon sample piece from being oxidized, and no matter how long is placed like this, monocrystalline silicon sample piece also can not be oxidized, and the oxygen content in monocrystalline silicon sample piece also can not change, later calcines monocrystalline silicon sample piece, detects the gas that the calcination obtained, can obtain the oxygen content of monocrystalline silicon sample piece. Through the technical scheme of this embodiment, can effectively improve the accuracy of oxygen content data in the monocrystalline silicon sample piece, guarantee to carry out correct evaluation to silicon chip quality to can guarantee the uniformity of error when carrying out multiple sample test.
In some embodiments, after the monocrystalline silicon sample block is cleaned, the mass of the cleaned monocrystalline silicon sample block can be weighed and used for calculating the oxygen content of the monocrystalline silicon sample block.
In this embodiment, since the protective film is formed on the surface of the single crystal silicon sample block, the single crystal silicon sample block can be left for a long time before the calcination.
The embodiment of the present invention further provides a device for measuring the interstitial oxygen content of monocrystalline silicon, as shown in fig. 3, including:
the cutting unit 31 is used for cutting the monocrystalline silicon sample into monocrystalline silicon sample blocks with fixed sizes and can cut the monocrystalline silicon sample into monocrystalline silicon sample blocks with required sizes and shapes;
a processing unit 33 for forming a protective film covering the surface of the single-crystal silicon sample block, the protective film containing no oxygen element;
in a specific example, the protective film can adopt paraffin, the components of the paraffin are carbon and hydrogen, and oxygen is not contained, so that the monocrystalline silicon sample block can be prevented from being oxidized; meanwhile, the paraffin has a low melting point, so that on one hand, the operation is easy when a protective film for coating the surface of the monocrystalline silicon sample block is formed, and on the other hand, the paraffin is melted and volatilized before the temperature reaches the melting point of silicon when the monocrystalline silicon sample block is calcined subsequently, so that the test result cannot be influenced.
A calcination unit 34 for calcining the single-crystal silicon sample block;
in some embodiments, calcining the single crystal silicon sample block comprises: placing the cleaned monocrystalline silicon sample block into a graphite crucible, and calcining the graphite crucible;
o in silicon2+C＝CO+CO2I.e., oxygen in the monocrystalline silicon sample block is reduced to carbon monoxide and carbon dioxide by the carbon in the graphite.
And the detection unit 35 is used for detecting the gas obtained by calcining to obtain the oxygen content of the monocrystalline silicon sample block.
In some embodiments, detecting the gas resulting from the calcining comprises: and detecting the gas obtained by calcining through an infrared detector to obtain the oxygen content of the monocrystalline silicon sample block. Specifically, the oxygen content can be finally calculated by detecting the amounts of carbon monoxide and carbon dioxide by an infrared detector.
In this embodiment, after the monocrystalline silicon sample is cut into the monocrystalline silicon sample piece of fixed size, form the protection film on cladding monocrystalline silicon sample piece surface, the protection film does not contain the oxygen element, and the protection film can prevent that monocrystalline silicon sample piece from being oxidized, and no matter how long is placed like this, monocrystalline silicon sample piece also can not be oxidized, and the oxygen content in monocrystalline silicon sample piece also can not change, later calcines monocrystalline silicon sample piece, detects the gas that the calcination obtained, can obtain the oxygen content of monocrystalline silicon sample piece. Through the technical scheme of this embodiment, can effectively improve the accuracy of oxygen content data in the monocrystalline silicon sample piece, guarantee to carry out correct evaluation to silicon chip quality to can guarantee the uniformity of error when carrying out multiple sample test.
In some embodiments, as shown in fig. 3, the apparatus further comprises:
and the cleaning unit 32 is used for cleaning the monocrystalline silicon sample block obtained after cutting and removing an oxide film on the surface of the monocrystalline silicon sample block. The purpose of cleaning is to wash away the oxide film on the surface of the monocrystalline silicon sample block and ensure the accuracy of detection. Specifically, the single crystal silicon sample block may be cleaned with HF. The cleaning process is as follows:
SiO2+2HF＝SiF4+2H2O。
in some embodiments, the apparatus further comprises:
and the weighing unit can also weigh the mass of the monocrystalline silicon sample block after being cleaned and is used for calculating the oxygen content of the monocrystalline silicon sample block.
In the embodiments of the methods of the present invention, the sequence numbers of the steps are not used to limit the sequence of the steps, and for those skilled in the art, the sequence of the steps is not changed without creative efforts.
It should be noted that, in the present specification, all the embodiments are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the embodiments, since they are substantially similar to the product embodiments, the description is simple, and the relevant points can be referred to the partial description of the product embodiments.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present disclosure, and all the changes or substitutions should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (10)
1. A method of measuring interstitial oxygen content of single crystal silicon, comprising:
cutting a monocrystalline silicon sample into monocrystalline silicon sample blocks with fixed sizes;
forming a protective film covering the surface of the monocrystalline silicon sample block, wherein the protective film does not contain oxygen;
and calcining the monocrystalline silicon sample block, and detecting gas obtained by calcining to obtain the oxygen content of the monocrystalline silicon sample block.
2. The method for measuring the interstitial oxygen content of single-crystal silicon according to claim 1, wherein before forming a protective film covering the surface of the single-crystal silicon sample block, the method further comprises:
and cleaning the monocrystalline silicon sample block, and removing an oxide film on the surface of the monocrystalline silicon sample block.
3. The method for measuring interstitial oxygen content of monocrystalline silicon according to claim 2, characterized in that the monocrystalline silicon sample piece is cleaned with HF.
4. The method of measuring interstitial oxygen content of single-crystal silicon according to claim 1, wherein calcining the single-crystal silicon sample block comprises:
and putting the monocrystalline silicon sample block into a graphite crucible for calcining.
5. The method for measuring the interstitial oxygen content of the monocrystalline silicon according to claim 1, wherein the detecting of the gas obtained by calcination comprises:
and detecting the gas obtained by calcining through an infrared detector to obtain the oxygen content of the monocrystalline silicon sample block.
6. The method for measuring the interstitial oxygen content of the monocrystalline silicon according to claim 1, wherein the protective film is paraffin.
7. An apparatus for measuring interstitial oxygen content of single crystal silicon, comprising:
the cutting unit is used for cutting the monocrystalline silicon sample into monocrystalline silicon sample blocks with fixed sizes;
a processing unit for forming a protective film covering the surface of the monocrystalline silicon sample block, the protective film being free of oxygen;
the calcining unit is used for calcining the monocrystalline silicon sample block;
and the detection unit is used for detecting the gas obtained by calcination to obtain the oxygen content of the monocrystalline silicon sample block.
8. The apparatus for measuring interstitial oxygen content of single-crystal silicon according to claim 7, further comprising:
and the cleaning unit is used for cleaning the monocrystalline silicon sample block obtained after cutting and removing the oxide film on the surface of the monocrystalline silicon sample block.
9. The apparatus for measuring interstitial oxygen content of monocrystalline silicon according to claim 7, wherein the calcining unit is used for placing the monocrystalline silicon sample block into a graphite crucible for calcining.
10. The apparatus for measuring the interstitial oxygen content of monocrystalline silicon according to claim 7, wherein the detection unit is specifically configured to detect the gas obtained by calcination by an infrared detector to obtain the oxygen content of the monocrystalline silicon sample block.
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