CN111947777A - Gallium arsenide/indium phosphide quantum sensor and use method thereof - Google Patents
Gallium arsenide/indium phosphide quantum sensor and use method thereof Download PDFInfo
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- CN111947777A CN111947777A CN202010809348.0A CN202010809348A CN111947777A CN 111947777 A CN111947777 A CN 111947777A CN 202010809348 A CN202010809348 A CN 202010809348A CN 111947777 A CN111947777 A CN 111947777A
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- sensor
- cavity body
- gallium arsenide
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- sewage
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 38
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims description 8
- 239000010865 sewage Substances 0.000 claims abstract description 30
- 239000002912 waste gas Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000008859 change Effects 0.000 claims description 19
- 238000001914 filtration Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 7
- 229910005540 GaP Inorganic materials 0.000 claims description 5
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 2
- 238000005070 sampling Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000002351 wastewater Substances 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/59—Transmissivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention relates to a gallium arsenide/indium phosphide quantum sensor which comprises a substrate and a photosensitive sensor arranged on the substrate, wherein the substrate comprises a cavity body and a bracket arranged on the cavity body, a light source is arranged in the cavity body through the bracket, and the photosensitive sensor is arranged on the inner wall of the cavity body. Compared with the existing sensor, the sensor provided by the invention has the advantages that the structure is more reasonable, the sensor is simple and easy to install, sampling is not needed, the sensor is directly arranged on a sewage or waste gas flow passage, and the monitoring result is more accurate and timely.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a sensor.
Background
Gallium arsenide is an important semiconductor material, is a compound semiconductor with a chemical formula of GaAs, has a molecular weight of 144.63, has good photosensitive performance, is widely applied to the field of photosensitive sensors, and is an important application field of such photosensitive sensors to detect environmental changes through changes of sensor sensing signals.
Disclosure of Invention
The invention aims to provide a gallium arsenide/indium phosphide quantum sensor and a method thereof.
In order to solve the technical problem, the gallium arsenide/indium phosphide quantum sensor comprises a base body and a photosensitive sensor arranged on the base body, wherein the base body comprises a cavity body and a bracket arranged on the cavity body, a light source is arranged in the cavity body through the bracket, and the photosensitive sensor is arranged on the inner wall of the cavity body.
And the outer wall of the cavity body is provided with an electrode connected with the photosensitive sensor.
The cavity body is cylindrical.
The light source is parallel or basically parallel to the axial direction of the hollow cavity body.
The bracket comprises a first bracket which is vertical or basically vertical to the axial direction of the cavity body, and one end of the light source is vertically connected to the first bracket; the bracket comprises a first bracket and a second bracket, wherein the first bracket and the second bracket are arranged vertically or substantially vertically to the axial direction of the hollow cavity, one end of the light source is vertically connected to the first bracket, and the other end of the light source is installed on the second bracket.
The photosensitive sensor comprises a germanium electrode bottom layer, a tunnel junction layer, a gallium arsenide layer, a tunnel junction layer, an indium gallium phosphide layer, a window layer and an electrode layer.
The invention also relates to a sewage and waste gas monitoring device which comprises the gallium arsenide/indium phosphide quantum sensor, wherein two ends of the cavity body are communicated, and the gallium arsenide/indium phosphide quantum sensor is arranged in flowing sewage or waste gas.
The invention also relates to a sewage and waste gas monitoring method, which comprises the gallium arsenide/indium phosphide quantum sensor, wherein two ends of the cavity body are communicated, the gallium arsenide/indium phosphide quantum sensor is arranged in flowing sewage or waste gas, the sewage or waste gas flows through the cavity body, the sewage or waste gas has refraction and filtration effects on light emitted to the photosensitive sensor by the light source, and when the components of the sewage or waste gas are not changed, the refraction and filtration proportion of the sewage or waste gas on the light emitted to the photosensitive sensor is constant, so that the current in the electrode on the outer surface of the cavity body is constant; once the sewage or waste gas composition changes, the refractive index and the filtering ratio of light are inevitably changed, and the change directly causes the current change in the electrode, so that the harmful substance composition in the sewage or waste gas can be detected to be changed from the current change in the electrode.
After the structure is adopted, the sensor can be arranged in flowing sewage or waste gas, and the change condition of substances in the sewage or the waste gas is judged by judging the refraction and filtration proportion of the sewage or the waste gas flowing through the cavity body.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Fig. 1 is a schematic view of the structure of a photosensor of the present invention.
Fig. 2 is a perspective view of a first embodiment of a gallium arsenide/indium phosphide quantum sensor of the present invention.
Fig. 3 is a top view of a first embodiment of a gallium arsenide/indium phosphide quantum sensor of the present invention.
Fig. 4 is a perspective view of a second embodiment of a gallium arsenide/indium phosphide quantum sensor of the present invention.
Fig. 5 is a top view of a second embodiment of a gallium arsenide/indium phosphide quantum sensor of the present invention.
Detailed Description
The invention relates to a method for realizing the manufacture of a gallium arsenide/indium phosphide quantum structure sensor, which is based on a quantum device of a low-dimensional semiconductor nano-structure quantum dot material, such As an epitaxial growth method of a gallium arsenide (gallium) indium phosphide (in), (Ga) As/InP) quantum dot material, and the gallium arsenide/indium phosphide quantum dot material is adjusted by controlling the growth.
Gallium arsenide is an important semiconductor material, is a compound semiconductor with a chemical formula of GaAs, has a molecular weight of 144.63, has good photosensitive performance, is widely applied to the field of photosensitive sensors, and is an important application field of such photosensitive sensors to detect environmental changes through changes of sensor sensing signals.
The invention relates to a photosensitive sensor made of a combination of gallium arsenide and indium gallium phosphide, and the structure of the sensor is shown in figure 1.
The photosensitive sensor can be understood as a photosensitive power generation sensor, namely, the sensor generates current under the irradiation of light, and the magnitude of the current changes along with the change of luminous flux. Vice versa, if the current that the sensor produced changes also says that luminous flux has changed, if the luminous flux has changed under the condition that the light source is constant, just says that the environment that the light source is located has changed to lay the theoretical basis that uses this photosensitive electricity generation sensor to monitor environmental change.
The invention comprises a substrate and a photosensitive sensor arranged on the substrate, wherein the substrate comprises a cavity body and a bracket arranged on the cavity body, a light source 4 is arranged in the cavity body through the bracket, and the photosensitive sensor is arranged on the inner wall 2 of the cavity body. The photosensitive sensor made of the gallium arsenide/indium gallium phosphide photosensitive material is arranged on the inner surface in the cavity. The photosensitive sensor is provided with a second insulating waterproof layer made of insulating transparent materials, and acrylic (PMMA) materials are preferably adopted. Light from the light source is directed onto the photosensor to cause the photosensor to generate an electrical current.
As shown in fig. 1, the photosensor includes a germanium electrode underlayer, a tunnel junction layer, a gallium arsenide layer, a tunnel junction layer, an indium gallium phosphide layer, a window layer, and an electrode layer.
And the outer wall 1 of the cavity body is provided with an electrode connected with an electrode layer of the photosensitive sensor. A first insulating waterproof layer made of insulating transparent materials is arranged on the electrode, and acrylic (PMMA) materials are preferably adopted. The connection between the electrode and the receiving device can adopt a wired mode and a wireless mode, wherein the wired mode is that the electrode positioned on the outer surface of the cylindrical cavity is communicated with the electrode through a lead; in the wireless mode, a wireless transmitter is directly arranged on the outer surface of the cylindrical cavity, the wireless transmitter sends the current value in the electrode to a receiving device in real time, and the wireless transmitter is arranged on the outer surface of the cylindrical cavity and transmits the signal of the photosensitive sensor in real time.
The cavity body can be cylindrical, can also be other shapes such as square column shape.
The light source is parallel or basically parallel to the axial direction of the hollow cavity body. The light source is arranged along the axial direction, so that the monitoring result is more accurate.
The support mounting includes two forms, as shown in fig. 2 and fig. 3, the support of the first embodiment includes a first support 3 and a second support 31 which are vertically or substantially vertically arranged with respect to the axial direction of the cavity body, the first support 3 is vertically arranged at the entrance of the cavity body, the second support 31 is also vertically arranged at the exit of the cavity body, one end of the light source is vertically connected to the first support 3, and the other end is mounted on the second support 31. First support and second support adopt the mode setting of space vertically, do benefit to waste gas or waste water and pass through from the cylinder cavity.
As shown in fig. 4 and 5, the bracket of the second embodiment may include only the first bracket 3, and one end of the light source 4 is vertically connected to the first bracket 3. In order to further increase the efficiency that waste gas or waste water passed through from the cylinder cavity, save the second support, because the individual second support of first support all has certain degree of hindrance to the flow of waste gas and waste water, reduce a support and will promote waste gas and waste water greatly and pass through speed in the cylinder cavity.
The device and the method for monitoring the sewage and the waste gas use the gallium arsenide/indium phosphide quantum sensor, two ends of the cavity body are communicated, and the gallium arsenide/indium phosphide quantum sensor is arranged in flowing sewage or waste gas.
One embodiment of the sensor of the invention is that the product is placed in a sewage discharge pipe, sewage flows through the cylindrical cavity, the sewage has refraction and filtration effects on light emitted by the light source to the photosensitive sensor, and when the sewage composition does not change, the refraction and filtration ratio of the sewage to the light emitted to the photosensitive sensor is constant, so that the current in the electrode on the outer surface of the cylindrical cavity is constant. Once the sewage composition changes, the refractive index and the filtering proportion of light are inevitably changed. This change will directly result in a change in the current in the electrodes, so that it can be detected from the change in the current in the electrodes that a harmful substance component in the sewage may have changed.
Another embodiment of the sensor according to the invention is that the product is placed in an exhaust duct through which the exhaust gases pass, the exhaust gases having a refracting and filtering action on the light emitted by the light source towards the light-sensitive sensor, the refracting and filtering ratio of the exhaust gases to the light emitted towards the light-sensitive sensor being constant in the absence of variations in the composition of the exhaust gases, which results in a constant current in the electrodes on the outer surface of the cylindrical housing. Once the exhaust gas composition changes, changes in the refractive index and the proportion of light filtered are necessarily induced. This change will directly result in a change in the current in the electrodes, so that it can be detected from the change in the current in the electrodes that a change in the harmful substance components in the exhaust gas may have occurred.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not intended to limit the present invention in any way, so that any person skilled in the art can make changes or modifications to the equivalent embodiments using the above disclosure. Any simple modification, equivalent change and modification of the above embodiments according to the technical essence of the present invention are within the scope of the present invention, unless they depart from the technical spirit of the present invention.
Claims (9)
1. A gallium arsenide/indium phosphide quantum sensor comprises a substrate and a photosensitive sensor arranged on the substrate, and is characterized in that: the substrate comprises a cavity body and a support arranged on the cavity, a light source is arranged in the cavity body through the support, and a photosensitive sensor is arranged on the inner wall of the cavity body.
2. The gallium arsenide/indium phosphide quantum sensor of claim 1 wherein: and the outer wall of the cavity body is provided with an electrode connected with the photosensitive sensor.
3. The gallium arsenide/indium phosphide quantum sensor of claim 1 wherein: the cavity body is cylindrical.
4. The gallium arsenide/indium phosphide quantum sensor of claim 1 wherein: the light source is parallel or basically parallel to the axial direction of the hollow cavity body.
5. The gallium arsenide/indium phosphide quantum sensor of claim 4 wherein: the bracket comprises
A first support arranged vertically or substantially vertically to the axial direction of the hollow cavity, wherein one end of the light source is vertically connected to the first support; or a first support and a second support, wherein the first support and the second support are arranged vertically or basically vertical to the axial direction of the cavity body, one end of the light source is vertically connected to the first support, and the other end of the light source is installed on the second support.
6. A GaAs/InP quantum sensor as claimed in any of claims 1 to 5, characterized in that: the photosensitive sensor comprises a germanium electrode bottom layer, a tunnel junction layer, a gallium arsenide layer, a tunnel junction layer, an indium gallium phosphide layer, a window layer and an electrode layer.
7. The GaAs/InP quantum sensor of claim 6, wherein the first insulating and waterproof layer is disposed on the outer wall of the cavity, and the second insulating and waterproof layer is disposed on the inner wall of the cavity.
8. The GaAs/InP quantum sensor of claim 7, wherein the first and second insulating and waterproof layers are made of acrylic material.
9. A use method of a gallium arsenide/indium phosphide quantum sensor is characterized in that: the GaAs/InP quantum sensor of any one of claims 1-8, the said cavity body is through at both ends, set up the said GaAs/InP quantum sensor in flowing sewage or waste gas, the sewage or waste gas flows through the cavity body, the sewage or waste gas has refraction and filtration function to the light that the light source shoots to the photosensor, when the sewage or waste gas composition does not change, the sewage or waste gas is to shooting to the light of the photosensor the refraction and filtration ratio is constant, cause the electric current in the electrode on the external surface of cavity body to be constant; once the sewage or waste gas composition changes, the refractive index and the filtering ratio of light are inevitably changed, and the change directly causes the current change in the electrode, so that the harmful substance composition in the sewage or waste gas can be detected from the current change in the electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010809348.0A CN111947777A (en) | 2020-08-12 | 2020-08-12 | Gallium arsenide/indium phosphide quantum sensor and use method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010809348.0A CN111947777A (en) | 2020-08-12 | 2020-08-12 | Gallium arsenide/indium phosphide quantum sensor and use method thereof |
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| CN111947777A true CN111947777A (en) | 2020-11-17 |
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| CN202010809348.0A Pending CN111947777A (en) | 2020-08-12 | 2020-08-12 | Gallium arsenide/indium phosphide quantum sensor and use method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5589935A (en) * | 1995-05-25 | 1996-12-31 | Honeywell, Inc. | Turbidity sensor with the capability of regulating the intensity of a light source |
| CN101728458A (en) * | 2008-12-26 | 2010-06-09 | 上海联孚新能源科技有限公司 | Preparation method of multi-junction solar cell |
| EP2287591A2 (en) * | 2009-08-17 | 2011-02-23 | Opsolution Nanophotonics GmbH | Method and device for determining the concentration of NO2 in gas mixtures |
| EP2653857A2 (en) * | 2012-04-19 | 2013-10-23 | Hydrometer GmbH | Turbidity sensor and flow meter for fluid |
| CN104157725A (en) * | 2013-05-13 | 2014-11-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for manufacturing GaInP/GaAs/InGaAsP/InGaAs four-junction cascading solar cell |
-
2020
- 2020-08-12 CN CN202010809348.0A patent/CN111947777A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5589935A (en) * | 1995-05-25 | 1996-12-31 | Honeywell, Inc. | Turbidity sensor with the capability of regulating the intensity of a light source |
| CN101728458A (en) * | 2008-12-26 | 2010-06-09 | 上海联孚新能源科技有限公司 | Preparation method of multi-junction solar cell |
| EP2287591A2 (en) * | 2009-08-17 | 2011-02-23 | Opsolution Nanophotonics GmbH | Method and device for determining the concentration of NO2 in gas mixtures |
| EP2653857A2 (en) * | 2012-04-19 | 2013-10-23 | Hydrometer GmbH | Turbidity sensor and flow meter for fluid |
| CN104157725A (en) * | 2013-05-13 | 2014-11-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for manufacturing GaInP/GaAs/InGaAsP/InGaAs four-junction cascading solar cell |
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Application publication date: 20201117 |