CN111943127B - Comb tooth structure, preparation method thereof and microphone - Google Patents
Comb tooth structure, preparation method thereof and microphone Download PDFInfo
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- CN111943127B CN111943127B CN202010850940.5A CN202010850940A CN111943127B CN 111943127 B CN111943127 B CN 111943127B CN 202010850940 A CN202010850940 A CN 202010850940A CN 111943127 B CN111943127 B CN 111943127B
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- 244000126211 Hericium coralloides Species 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 13
- 230000003068 static effect Effects 0.000 claims description 119
- 239000004020 conductor Substances 0.000 claims description 109
- 239000011810 insulating material Substances 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 44
- 238000005530 etching Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract description 11
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 239000012774 insulation material Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/0056—Adjusting the distance between two elements, at least one of them being movable, e.g. air-gap tuning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/08—Mouthpieces; Microphones; Attachments therefor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Micromachines (AREA)
Abstract
The invention provides a comb structure, a preparation method thereof and a microphone. A comb tooth pair is formed between the second comb teeth and the first comb teeth of the comb tooth structure, and the offset of the second comb teeth and the first comb teeth can be accurately controlled through the thickness of deposited materials; the gap between the second comb teeth and the first comb teeth is accurately controllable, and the consistency between the second comb teeth and the first comb teeth is good; the initial overlapping part between the second comb teeth and the first comb teeth can be accurately controlled, so that the comb tooth structure can be used for driving and detecting, the material layer for preparing the comb tooth structure is not limited, as long as insulation and conduction requirements for each layer are met, meanwhile, the process is compatible, and the driving voltage and the grounding between the second comb teeth and the first comb teeth can be interchanged.
Description
[ field of technology ]
The invention relates to a comb structure and a preparation method thereof, in particular to a comb structure with initial position offset and a preparation method thereof.
[ background Art ]
In the prior art, a comb structure device consists of two comb structures, one of which is movable and the other of which is stationary, and the fingers of the comb structure device are mutually intersected, so that the comb structure device can be used for driving and detecting. The preparation flow of the comb structure device comprises the following steps: for example, the top silicon layer of the SOI (silicon on isolation) silicon wafer can be directly subjected to a photoetching process (dry etching along the z direction), and the motion mode is in-plane motion (back and forth in the plane), and is currently successfully applied to various MEMS devices such as gyroscopes, MEMS electrostatic drivers, accelerometers and the like.
However, there are also various movements to realize the displacement in the out-of-plane direction, and the comb teeth moving along the z direction can drive other mechanisms to move, and can be detected and driven. The static comb teeth and the dynamic comb teeth are arranged to have a position offset in the z direction (generally half the height of the comb teeth is taken). For driving, if the static comb teeth and the dynamic comb teeth are completely overlapped, the driving force is not generated in the z direction by applying a driving voltage between the static comb teeth and the dynamic comb teeth; for detection, if the static comb teeth and the dynamic comb teeth start to be completely overlapped, the capacitance value between the static comb teeth and the dynamic comb teeth is reduced regardless of the motion direction of the moving part in the +z direction or the-z direction, and the sensitivity is low regardless of the motion direction. The existing preparation method of the offset comb tooth structure comprises the following steps: the static comb teeth and the dynamic comb teeth structure are made step by step in sequence directly through a MEMS deposition etching process, firstly, films with lower left thickness are deposited, the comb teeth structure is etched, a sacrificial layer is filled, the films with upper right thickness are deposited, the comb teeth structure is etched, and finally, the films are released; the static comb teeth and the dynamic comb teeth are respectively etched, so that the relative positions of the static comb teeth and the dynamic comb teeth are unlikely to be ensured; and the offset is extremely difficult to control. Other technological schemes are to etch two wafers respectively with corresponding comb tooth structures and then bond the wafers together, and then carry out subsequent steps.
Therefore, it is necessary to provide a comb structure with initial position offset and a method for manufacturing the same, so as to solve the problems of poor gap consistency between the static comb and the movable comb, difficult controllability of position offset accuracy of the static comb and the movable comb in the z direction, and the like.
[ invention ]
The invention aims to provide a comb tooth structure with simple preparation process flow and accurate and controllable relative initial position offset between static comb teeth and dynamic comb teeth and a preparation method thereof.
The technical scheme of the invention is as follows:
to achieve the above object, in one aspect, the present invention provides a comb structure comprising: the movable comb structure is provided with a plurality of first comb teeth, the first comb teeth comprise a first movable conductive layer and a second movable conductive layer, and the first movable conductive layer and the second movable conductive layer are electrically isolated from each other; the static comb structure is provided with a plurality of second comb teeth, the second comb teeth and the first comb teeth are oppositely arranged at an interval, the second comb teeth and the first comb teeth are coplanar, the upper and lower sides of the second comb teeth are respectively aligned with the upper and lower sides of the first comb teeth, the second comb teeth comprise a first static conductive layer and a second static conductive layer, the first static conductive layer and the second static conductive layer are electrically isolated from each other, a movable insulating layer is arranged between the first movable conductive layer and the second movable conductive layer, a first static insulating layer is arranged between the first static conductive layer and the second static conductive layer, and the first static insulating layer and the movable insulating layer are mutually staggered in the thickness direction of the comb structure.
Preferably, the second comb teeth further comprise a third static conductive layer, and a second static insulating layer is arranged between the third static conductive layer and the second static conductive layer.
Preferably, the second static insulating layer and the movable insulating layer are staggered in the thickness direction of the comb structure.
Preferably, a positive voltage is applied to the first movable conductive layer, and a negative voltage is applied to the second movable conductive layer, so that a voltage difference is formed between the first movable conductive layer and the second static conductive layer, and a voltage difference is also formed between the second movable conductive layer and the second static conductive layer, so that the movable comb structure moves relative to the static comb structure.
Preferably, applying a voltage between the first movable conductive layer and the second static conductive layer causes the movable comb structure to move relative to the static comb structure.
In order to achieve the above object, another aspect of the present invention provides a method for manufacturing a comb structure, comprising the steps of: s0. depositing a sacrificial layer material on a substrate; s1, providing a substrate, and depositing a first conductive material and a first insulating material on the substrate, wherein the first insulating material is positioned on the first conductive material; s2, modeling the first insulating material so that part of the surface of the first conductive material is exposed; s3, depositing a second conductive material on the top of the substrate, so that the second conductive material covers the first insulating material; s4, after a second insulating material is deposited on the top of the substrate to cover the second conductive material, modeling the second insulating material so that part of the surface of the second conductive material is exposed; s5, depositing a third conductive material on the top of the substrate, so that the second insulating material is covered by the third conductive material; s6, deep etching is conducted on the upper portion of the substrate to form gaps among comb teeth, and then a plurality of comb-shaped structures are formed.
Preferably, the method further comprises the following steps: s7, carrying out back cavity etching and releasing technology on the substrate to form a movable comb-shaped structure and a static comb-shaped structure, wherein the movable comb-shaped structure is provided with a plurality of first comb teeth, the static comb-shaped structure is provided with a plurality of second comb teeth, the second comb teeth and the first comb teeth are arranged at an intersecting interval, the second comb teeth and the first comb teeth are coplanar, and the upper side and the lower side of the second comb teeth are aligned with the upper side and the lower side of the first comb teeth respectively.
Preferably, in step S2, a plurality of first insulating layers are formed after molding the first insulating material, the plurality of first insulating layers are disposed at intervals in the left-right direction, and in step S4, a plurality of second insulating layers are formed after molding the second insulating material, and the plurality of second insulating layers are disposed at intervals.
Preferably, the method further comprises the following steps after step S5: s51, after a third insulating material is deposited on the top of the substrate to cover the third conductive material, modeling the third insulating material so that part of the surface of the third conductive material is exposed; s52, depositing a fourth conductive material on the top of the substrate, so that the third insulating material is covered by the fourth conductive material.
Preferably, the first comb teeth have a movable insulating layer, the movable insulating layer is formed by the second insulating material, the second comb teeth have a first static insulating layer, the first static insulating layer is formed by the first insulating material, and the first static insulating layer and the movable insulating layer are staggered from each other in the thickness direction of the comb teeth structure.
Preferably, after deep etching is performed on the substrate in step S6, the first conductive material and the second conductive material of one of the comb structures are electrically connected, and the second conductive material and the third conductive material are insulated from each other by the second insulating material.
Preferably, after deep etching is performed on the substrate in step S6, the third conductive material of one of the comb structures is electrically connected to the second conductive material, and the second conductive material and the first conductive material are insulated from each other by the first insulating material.
Preferably, after the third insulating material is molded in step S51 to form a third insulating layer, after deep etching is performed on the substrate in step S6, the fourth conductive material and the third conductive material of one of the comb structures are insulated from each other by the third insulating material, the third conductive material is electrically connected to the second conductive material, and the second conductive material and the first conductive material are insulated from each other by the first insulating material.
Preferably, one of the comb structures is a second comb tooth.
The invention also provides a microphone which comprises a substrate with a cavity and a vibrating diaphragm connected with the substrate and covering the cavity, wherein the microphone comprises the comb tooth structure, the comb tooth structure is arranged on one side of the vibrating diaphragm away from the substrate, a support beam is arranged between the comb tooth structure and the vibrating diaphragm, one side of the support beam is fixedly connected with the movable comb structure of the comb tooth structure, the other side of the support beam is connected with the vibrating diaphragm, and the static comb structure is connected with the vibrating diaphragm through a connecting layer.
Preferably, the diaphragm includes a main body portion at a center and a fixing portion connected to an outer periphery of the main body portion and to the base, and the support beam is fixed to the main body portion and is disposed at a distance from the fixing portion.
Preferably, the connecting layer is a hollow annular structure and is connected with the fixing part.
The invention has the beneficial effects that: a comb tooth pair is formed between the second comb teeth and the first comb teeth, and the offset of the second comb teeth and the first comb teeth can be precisely controlled through the thickness of the deposited material; the gap between the second comb teeth and the first comb teeth is accurately controllable, and the consistency between the second comb teeth and the first comb teeth is good; the initial overlapping part between the second comb teeth and the first comb teeth can be accurately controlled, so that the comb tooth structure can be used for driving and detecting, the material layer for preparing the comb tooth structure is not limited, as long as insulation and conduction requirements for each layer are met, meanwhile, the process is compatible, and the driving voltage and the grounding between the second comb teeth and the first comb teeth can be interchanged.
[ description of the drawings ]
FIG. 1 is a schematic view of a part of a comb structure according to one embodiment of the present invention;
FIG. 2 is a schematic view of a part of a comb structure according to another embodiment of the present invention;
FIG. 3 is a schematic diagram of a comb structure with voltage applied thereto according to an embodiment of the present invention;
FIGS. 4A to 4G illustrate a preparation method according to a comb structure in one embodiment of the present invention;
FIGS. 5A to 5B illustrate a method of manufacturing a comb structure according to another embodiment of the present invention;
FIG. 6 is a schematic flow chart of a method for preparing a comb structure according to the present invention;
fig. 7 is a perspective view of a microphone according to an embodiment of the present invention;
fig. 8 is a perspective view of a microphone according to another embodiment of the present invention;
FIG. 9 is an exploded view of the microphone of FIG. 8;
fig. 10 is a cross-sectional view taken along line CC of fig. 8.
FIG. 11 is a simulation of capacitance change under displacement of the comb structure of the present invention and a conventional comb structure.
[ detailed description ] of the invention
The invention will be further described with reference to the drawings and embodiments.
Referring to fig. 1, a comb structure with initial position offset includes a movable comb structure and a static comb structure. The movable comb structure is provided with a plurality of first comb teeth B, the first comb teeth B comprise a first movable conductive layer 1 and a second movable conductive layer 2, and the first movable conductive layer 1 and the second movable conductive layer 2 are electrically isolated from each other; in this embodiment, the first movable conductive layer 1 and the second movable conductive layer 2 are electrically isolated from each other by an insulating material, and the first movable conductive layer 1 is located below the second movable conductive layer 2.
The static comb structure is provided with a plurality of second comb teeth A, the second comb teeth A and the first comb teeth B are arranged at opposite and crossed intervals, and in the embodiment, the second comb teeth A and the first comb teeth B are arranged at crossed intervals in the left-right direction. The second comb teeth A and the first comb teeth B are coplanar, namely, the plane where the second comb teeth A are located coincides with the plane where the first comb teeth B are located, the upper side and the lower side of the second comb teeth A are respectively aligned with the upper side and the lower side of the first comb teeth B, namely, the upper side of the second comb teeth A and the upper side of the first comb teeth B are in the same straight line, and the lower side of the second comb teeth A and the lower side of the first comb teeth B are in the same straight line, so that the length of the second comb teeth A is equal to the length of the first comb teeth B. The second comb teeth A comprise a first static conductive layer 3 and a second static conductive layer 4, and the first static conductive layer 3 and the second static conductive layer 4 are electrically isolated from each other; in this embodiment, the first static conductive layer 3 and the second static conductive layer 4 are electrically isolated from each other by an insulating material, and the first static conductive layer 3 is located below the second static conductive layer 4.
Referring to fig. 1 and 2, a movable insulating layer 5 is disposed between the first movable conductive layer 1 and the second movable conductive layer 2, a first static insulating layer 6 is disposed between the first static conductive layer 3 and the second static conductive layer 4, and the first static insulating layer 6 and the movable insulating layer 5 are staggered in the thickness direction of the comb structure, so that an initial position offset is formed between the first comb teeth B and the second comb teeth a.
Referring to fig. 1 and 2, in one embodiment, the second comb teeth a further includes a third static conductive layer 7, and a second static insulating layer 8 is disposed between the third static conductive layer 7 and the second static conductive layer 4, so that the first comb teeth B and the second comb teeth a form a differential structure. The second static insulating layer 8 and the dynamic insulating layer 5 are also staggered from each other in the thickness direction of the comb-tooth structure. In one embodiment, the dynamic insulation layer 5 is located between the first static insulation layer 6 and the second static insulation layer 8 in the up-down direction, so that a differential initial position offset is formed between the first comb teeth B and the second comb teeth a.
Referring to fig. 3, in one embodiment, a voltage is applied to the second movable conductive layer 2 to ground the first static conductive layer 3, so that the movable comb structure moves relative to the static comb structure; or the second movable conductive layer 2 is grounded, and a voltage is applied to the first static conductive layer 3, so that the movable comb structure can move relative to the static comb structure, thereby enabling the drivable voltage and the grounding between the static comb structure and the movable comb structure to be interchanged.
In one embodiment, a positive voltage is applied to the second movable conductive layer 2, a negative voltage is applied to the first movable conductive layer 1, and an initial voltage is applied to the second static conductive layer 4, such that a voltage difference is formed between the second movable conductive layer 2 and the second static conductive layer 4, and a voltage difference is also formed between the first movable conductive layer 1 and the second static conductive layer 4, such that the movable comb structure is movable relative to the static comb structure.
Referring to fig. 1 to 6, a method for preparing a comb structure with initial position bias includes the following steps:
s0. depositing a sacrificial layer material on the substrate 10;
s1, providing a substrate 10, and depositing a first conductive material 11 and a first insulating material 12 on the substrate 10, wherein the first insulating material 12 is positioned on the first conductive material 11;
s2, modeling the first insulating material 12 so that part of the surface of the first conductive material 11 is exposed;
s3, depositing a second conductive material 13 on top of the substrate 10, so that the second conductive material 13 covers the first insulating material 12;
s4, after depositing a second insulating material 14 on the top of the substrate 10 to cover the second conductive material 13, shaping the second insulating material 14 so that part of the surface of the second conductive material 13 is exposed;
s5, depositing a third conductive material 15 on the top of the substrate 10, so that the third conductive material 15 covers the second insulating material 14;
s6, deep etching is carried out on the upper side of the substrate 10 to form gaps among comb teeth, and then a plurality of comb structures are formed;
s7, carrying out back cavity etching and releasing processes on the substrate 10 to form a movable comb-shaped structure and a static comb-shaped structure; the movable comb structure is provided with a plurality of first comb teeth B, the static comb structure is provided with a plurality of second comb teeth A, the second comb teeth A and the first comb teeth B are arranged at an interval in a left-right direction in an intersecting mode, the second comb teeth A and the first comb teeth B are coplanar, and the upper side and the lower side of the second comb teeth A are aligned with the upper side and the lower side of the first comb teeth B respectively.
In this embodiment, the first conductive material 11, the second conductive material 13, and the third conductive material 15 are made of the same conductive material, and the first insulating material 12 and the second insulating material 14 are made of the same insulating material (in other embodiments, the first insulating material 12 and the second insulating material 14 may be made of different insulating materials).
In one embodiment, in step S2, a plurality of first insulating layers are formed after the molding of the first insulating material 12, a plurality of first insulating layers are disposed at intervals in the left-right direction, and in step S4, a plurality of second insulating layers are formed after the molding of the second insulating material 14, a plurality of second insulating layers are disposed at intervals in the left-right direction, and a plurality of second insulating layers are disposed above a plurality of first insulating layers.
Referring to fig. 5A and 5B, in one embodiment, after step S5, the method further includes the following steps:
s51, after depositing a third insulating material 16 on the top of the substrate 10 to cover the third conductive material 15, shaping the third insulating material 16 so that part of the surface of the third conductive material 15 is exposed;
s52. depositing a fourth conductive material 17 on top of the substrate 10 such that the fourth conductive material 17 covers the third insulating material 16. In the present embodiment, the first conductive material 11, the second conductive material 13, the third conductive material 15, and the fourth conductive material 17 are provided to use the same conductive material, and the first insulating material 12, the second insulating material 14, and the third insulating material 16 are provided to use the same insulating material (in other embodiments, the first insulating material 12, the second insulating material 14, and the third insulating material 16 may be provided to use different insulating materials).
Referring to fig. 4A to 4G, in one embodiment, the first comb teeth B have a plurality of the movable insulating layers 5, the movable insulating layers 5 are formed by the second insulating material 14, the second comb teeth a have a plurality of the first static insulating layers 6, the first static insulating layers 6 are formed by the first insulating material 12, the first static insulating layers 6 and the movable insulating layers 5 are staggered from each other in the up-down direction, and in this embodiment, the movable insulating layers 5 are located above the first static insulating layers 6, so that the first comb teeth B and the second comb teeth a are alternately arranged in the left-right direction. In other embodiments, the dynamic insulation layer 5 may be formed of the first insulation material 12, the first static insulation layer 6 may be provided as the second insulation material 14, and the dynamic insulation layer 5 is located below the first static insulation layer 6.
Referring to fig. 4A to 4G, in one embodiment, after deep etching is performed on the substrate 10 in step S6, the first conductive material 11 and the second conductive material 13 of one of the comb structures are electrically connected, and the second conductive material 13 and the third conductive material 15 are insulated from each other by the second insulating material 14. In this embodiment, the comb-like structure is provided as the first comb teeth B (in other embodiments, the comb-like structure may be provided as the second comb teeth a). After deep etching is performed on the substrate 10 in step S6, the third conductive material 15 of one of the comb structures is electrically connected to the second conductive material 13, and the second conductive material 13 and the first conductive material 11 are insulated from each other by the first insulating layer. In this embodiment, the comb-like structure is provided as the second comb teeth a (in other embodiments, the comb-like structure may be provided as the first comb teeth B).
Referring to fig. 4A to 4G, in this example, by the preparation method of the comb structure with initial position offset, the final result is: the first comb teeth B are arranged on the left side of the first comb teeth B, the first comb teeth B comprise a first movable conductive layer 1, a movable insulating layer 5 and a second movable conductive layer 2, the first movable conductive layer 11 is electrically connected with the second conductive material 13, the movable insulating layer 5 is formed by the second insulating material 14, and the second movable conductive layer 2 is formed by a third conductive material 15; the second comb teeth a comprise the third conductive material 15 and the second conductive material 13 which are electrically connected to form a second static conductive layer 4, a first static insulating layer 6 and a first static conductive layer 3, wherein the first static insulating layer 6 is formed by the first insulating material 12, and the first static conductive layer 3 is formed by the first conductive material 11. The second comb teeth A are coplanar with the first comb teeth B, and the upper and lower sides of the second comb teeth A are aligned with the upper and lower sides of the first comb teeth B respectively.
Referring to fig. 4A to 5B, in one embodiment, after the third insulating material 16 is patterned in step S51 to form a third insulating layer, and after deep etching is performed on the substrate 10 in step S6, the fourth conductive material 17 and the third conductive material 15 of one of the comb structures are insulated from each other by the third insulating layer, the third conductive material 15 is electrically connected to the second conductive material 13, and the second conductive material 13 and the first conductive material 11 are insulated from each other by the first insulating material 12. In this embodiment, the comb structure is configured as the second comb teeth a, that is, the one of the comb structures is the second comb teeth a. After the third insulating material 16 is patterned in step S51 to form a third insulating layer, after deep etching is performed on the substrate 10 in step S6, one of the fourth conductive materials 17 of the comb-shaped structure is electrically connected to the third conductive material 15, the third conductive material 15 and the second conductive material 13 are insulated from each other by the second insulating layer, and the second conductive material 13 is electrically connected to the first conductive material 11. In this embodiment, the comb structure is configured as the first comb teeth B, that is, one of the comb structures is the first comb teeth B, so that a differential initial position offset is formed between the first comb teeth B and the second comb teeth a.
Referring to fig. 1 to 6, in this example, by the method for manufacturing the comb structure with the initial position offset, the initial position offset forming a difference between the first comb teeth B and the second comb teeth a is finally obtained: the first comb teeth B are disposed on the left side of the first comb teeth B, the first comb teeth B include a first movable conductive layer 1, a movable insulating layer 5 and a second movable conductive layer 2, the movable insulating layer 5 is formed by the second insulating material 14, the first movable conductive layer 1 is formed by electrically connecting the second conductive material 13 with the first conductive material 11, and the second movable conductive layer 2 is formed by electrically connecting the fourth conductive material 17 with the third conductive material 15. The second comb teeth a comprise a first static conductive layer 3, a second static conductive layer 4, a third static conductive layer 7, a first static insulating layer 6 and a second static insulating layer 8, wherein the first static insulating layer 6 is formed by a first insulating material 12, the first static conductive layer 3 is formed by a first conductive material 11, the second static conductive layer 4 is formed by electrically connecting a second conductive material 13 with a third conductive material 15, the third static conductive layer 7 is formed by a fourth conductive material 17, and the second static insulating layer 8 is formed by a third insulating material 16. The second comb teeth A are coplanar with the first comb teeth B, and the upper and lower sides of the second comb teeth A are aligned with the upper and lower sides of the first comb teeth B respectively.
According to the preparation method of the comb tooth structure with initial position offset, the comb tooth pair can be formed between the second comb tooth A and the first comb tooth B, and the offset of the movable comb structure and the static comb structure can be accurately controlled through the thickness of deposited materials; the gap between the first comb teeth B and the second comb teeth A is accurately controllable, and the first comb teeth B and the second comb teeth A are consistent due to the fact that the first comb teeth B and the second comb teeth A are formed by one-time etching; the initial overlapping part between the first comb teeth B and the second comb teeth A can be accurately controlled, so that the comb tooth structure can be used for driving and detecting, the material layer for preparing the comb tooth structure is not limited as long as the insulation and conduction requirements for each layer are met, meanwhile, the process is compatible, and the driving voltage and the grounding between the first comb teeth B and the second comb teeth A can be interchanged. The preparation process flow of the comb structure is simple, the initial position offset of the comb structure is accurate and controllable, and the preparation process flow is suitable for the requirements of different devices.
Please refer to fig. 7 and 8, which illustrate a microphone using the above comb structure according to the present invention, wherein the comb structure in fig. 7 is a single chip. Referring to fig. 8 to 10, the microphone includes a base 20 having a cavity 21, a diaphragm 30 connected to the base 20 and covering the cavity 21, and the comb structure is disposed on a side of the diaphragm 30 away from the base 20, and includes a first comb a and a second comb B, wherein the first comb a is a static comb structure, and the second comb B is a dynamic comb structure. The microphone is also provided with a supporting beam 40 positioned between the comb structure and the vibrating diaphragm 30, one side of the supporting beam 40 is fixedly connected with the movable comb structure of the comb structure, the other side of the supporting beam is connected with the vibrating diaphragm 30, and the static comb structure is connected with the vibrating diaphragm 30 through a connecting layer 50.
The diaphragm 30 includes a main body portion 32 located at the center and a fixing portion 31 connected to the outer periphery of the main body portion 32 and connected to the substrate 20, the support beam 40 is fixed to the main body portion 32 and is disposed at intervals with the fixing portion 31, the connection layer 50 is of a hollow ring structure and is connected to the fixing portion 31, and the connection layer 50 enables the comb structure and the diaphragm 30 to be disposed at intervals. The support beam 40 is disposed between the comb structure and the diaphragm 30, and the support beam 40 transmits the vibration of the diaphragm 30 to the movable comb structure, thereby driving the movable comb structure to move.
Referring to fig. 11, the capacitance change rate of the comb structure with initial position bias in the moving comb state of the present invention, wherein a normal comb pair is used as a reference group, the moving comb displacement relative to the static comb is from-1 um to 1um, and the capacitance change (other conditions are consistent) is recorded. (1) As can be seen from the change curve, the capacitance changes linearly with the movement of the movable comb teeth. (2) Compared with the traditional comb structure, the capacitance change rate of the comb structure with initial position offset is slightly smaller under the displacement, and under the condition that the movable comb is displaced in the same way as the simulation result, the capacitance change quantity generated by the comb structure is smaller than that of the traditional comb structure (10% -20%), namely the sensitivity is reduced by the proportion under the same condition, but considering that the comb structure with initial position offset is extremely difficult to prepare by the traditional method, the loss is acceptable. (3) In the structure of the present invention, other materials than the electrode may be preferably used, and a material having a low dielectric constant may be used, so that the capacitance change amount of the structure of the present invention may be increased.
According to the preparation method of the comb structure with the offset initial position, the comb pair can be formed between the static comb second comb A and the movable comb first comb B, and the offset of the movable comb structure and the static comb structure can be accurately controlled through the thickness of deposited materials; the gap between the first comb teeth B and the second comb teeth A is accurately controllable, and the first comb teeth B and the second comb teeth A are consistent due to the fact that the first comb teeth B and the second comb teeth A are formed by one-time etching; the initial overlapping part between the first comb teeth B and the second comb teeth A can be accurately controlled, so that the comb tooth structure can be used for driving and detecting, the material layer for preparing the comb tooth structure is not limited as long as the insulation and conduction requirements for each layer are met, meanwhile, the process is compatible, and the driving voltage and the grounding between the first comb teeth B and the second comb teeth A can be interchanged. The preparation process flow of the comb structure is simple, the initial position offset of the comb structure is accurate and controllable, and the preparation process flow is suitable for the requirements of different devices.
While the invention has been described with respect to the above embodiments, it should be noted that modifications can be made by those skilled in the art without departing from the inventive concept, and these are all within the scope of the invention.
Claims (15)
1. A comb structure, comprising:
the movable comb structure is provided with a plurality of first comb teeth, the first comb teeth comprise a first movable conductive layer and a second movable conductive layer, and the first movable conductive layer and the second movable conductive layer are electrically isolated from each other;
a static comb structure, the static comb structure is provided with a plurality of second comb teeth, the second comb teeth and the first comb teeth are oppositely arranged at an interval, the second comb teeth and the first comb teeth are coplanar, the upper and lower sides of the second comb teeth are respectively aligned with the upper and lower sides of the first comb teeth, the second comb teeth comprise a first static conductive layer and a second static conductive layer, the first static conductive layer and the second static conductive layer are electrically isolated from each other,
a movable insulating layer is arranged between the first movable conducting layer and the second movable conducting layer, a first static insulating layer is arranged between the first static conducting layer and the second static conducting layer, and the first static insulating layer and the movable insulating layer are staggered in the thickness direction of the comb structure;
the second comb teeth further comprise a third static conductive layer, and a second static insulating layer is arranged between the third static conductive layer and the second static conductive layer;
the second static insulating layer and the movable insulating layer are staggered in the thickness direction of the comb structure.
2. A comb structure according to claim 1, wherein: and applying a positive voltage to the first movable conductive layer and applying a negative voltage to the second movable conductive layer, so that a voltage difference is formed between the first movable conductive layer and the second static conductive layer, and meanwhile, a voltage difference is also formed between the second movable conductive layer and the second static conductive layer, so that the movable comb-shaped structure moves relative to the static comb-shaped structure.
3. A comb structure according to claim 1, wherein: applying a voltage between the first movable conductive layer and the second static conductive layer causes the movable comb structure to move relative to the static comb structure.
4. The preparation method of the comb tooth structure is characterized by comprising the following steps of:
s0. depositing a sacrificial layer material on a substrate;
s1, providing a substrate, and depositing a first conductive material and a first insulating material on the substrate, wherein the first insulating material is positioned on the first conductive material;
s2, modeling the first insulating material so that part of the surface of the first conductive material is exposed;
s3, depositing a second conductive material on the top of the substrate, so that the second conductive material covers the first insulating material;
s4, after a second insulating material is deposited on the top of the substrate to cover the second conductive material, modeling the second insulating material so that part of the surface of the second conductive material is exposed;
s5, depositing a third conductive material on the top of the substrate, so that the second insulating material is covered by the third conductive material;
s6, deep etching is conducted on the upper portion of the substrate to form gaps among comb teeth, and then a plurality of comb-shaped structures are formed.
5. The method of preparing a comb structure according to claim 4, further comprising the steps of:
s7, carrying out back cavity etching and releasing technology on the substrate to form a movable comb-shaped structure and a static comb-shaped structure, wherein the movable comb-shaped structure is provided with a plurality of first comb teeth, the static comb-shaped structure is provided with a plurality of second comb teeth, the second comb teeth and the first comb teeth are arranged at an intersecting interval, the second comb teeth and the first comb teeth are coplanar, and the upper side and the lower side of the second comb teeth are aligned with the upper side and the lower side of the first comb teeth respectively.
6. The method of manufacturing a comb-teeth structure according to claim 5, wherein a plurality of first insulating layers are formed after the first insulating material is molded in step S2, the plurality of first insulating layers are arranged at intervals, and a plurality of second insulating layers are formed after the second insulating material is molded in step S4, the plurality of second insulating layers are arranged at intervals.
7. The method for preparing a comb-tooth structure according to claim 5, further comprising the steps of, after step S5:
s51, after a third insulating material is deposited on the top of the substrate to cover the third conductive material, modeling the third insulating material so that part of the surface of the third conductive material is exposed;
s52, depositing a fourth conductive material on the top of the substrate, so that the third insulating material is covered by the fourth conductive material.
8. The method according to claim 5, wherein the first comb teeth have a movable insulating layer formed of the second insulating material, the second comb teeth have a first static insulating layer formed of the first insulating material, and the first static insulating layer and the movable insulating layer are offset from each other in a thickness direction of the comb teeth structure.
9. The method of manufacturing a comb-tooth structure according to claim 5, wherein after deep etching is performed on top of the substrate in step S6, the first conductive material and the second conductive material of one of the comb-tooth structures are electrically connected, and the second conductive material and the third conductive material are insulated from each other by the second insulating material.
10. The method of manufacturing a comb-teeth structure according to claim 5, wherein after deep etching is performed on top of a substrate in step S6, the third conductive material of one of the comb-teeth structures is electrically connected to the second conductive material, and the second conductive material and the first conductive material are insulated from each other by the first insulating material.
11. The method according to claim 7, wherein a third insulating layer is formed after the third insulating material is molded in step S51, wherein one of the fourth conductive material and the third conductive material of the comb-like structure is insulated from each other by the third insulating material, and the third conductive material is electrically connected to the second conductive material, and the second conductive material and the first conductive material are insulated from each other by the first insulating material after deep etching is performed over the substrate in step S6.
12. The method of claim 11, wherein one of the comb structures is a second comb.
13. A microphone, its including have the cavity the basement, with the basement is connected and covers the vibrating diaphragm of cavity, characterized in that, the microphone includes the broach structure of claim 1, the broach structure is arranged in the vibrating diaphragm is kept away from the one side of basement, the microphone still is equipped with the supporting beam that is located between broach structure and the vibrating diaphragm, supporting beam one side and the movable comb structure fixed connection of broach structure, the opposite side with the vibrating diaphragm is connected, quiet comb structure pass through the tie coat with the vibrating diaphragm is connected.
14. The microphone of claim 13, wherein the diaphragm includes a main body portion at a center and a fixing portion connected to an outer periphery of the main body portion and to the base, and the support beam is fixed to the main body portion and is spaced apart from the fixing portion.
15. The microphone of claim 14 wherein the connection layer is a hollow annular structure and is connected to the fixed portion.
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| CN2020106642089 | 2020-07-10 |
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