CN111934071A - TSV-based ridged substrate integrated waveguide band-pass filter - Google Patents
TSV-based ridged substrate integrated waveguide band-pass filter Download PDFInfo
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- CN111934071A CN111934071A CN202010566782.0A CN202010566782A CN111934071A CN 111934071 A CN111934071 A CN 111934071A CN 202010566782 A CN202010566782 A CN 202010566782A CN 111934071 A CN111934071 A CN 111934071A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
- H01P1/2088—Integrated in a substrate
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Abstract
The invention discloses a Through Silicon Via (TSV) -based ridged substrate integrated waveguide band-pass filter, which comprises a high-resistance silicon substrate, wherein two rectangular metal grooves A are formed in the high-resistance silicon substrate, a plurality of pairs of diaphragms are arranged on two sides in the metal grooves A, the diaphragms and the side walls of the metal grooves A are formed by arranging through silicon vias, a top surface insulating layer is arranged on the top of the high-resistance silicon substrate, a rectangular metal groove B is embedded in the top surface insulating layer, a ridge back surface metal layer is arranged in the middle of the bottom of the top surface insulating layer, the adjacent side walls of the two rectangular metal grooves A are connected through the ridge back surface metal layer, and the other two. The manufacturing process of the ridge-shaped substrate integrated waveguide band-pass filter based on the TSV is compatible with a CMOS (complementary metal oxide semiconductor) process, and the manufacturing cost is low; the volume is small, so that the chip is conveniently integrated in a miniaturized chip, stacked chip interconnection is realized, the length of an interconnection line is shortened, and the chip performance is greatly improved; the bandwidth is large, and the ultra-wideband filtering applied to the microwave/radio frequency field can be realized.
Description
Technical Field
The invention belongs to the technical field of electronic devices, and relates to a ridge substrate integrated waveguide band-pass filter based on TSV.
Background
In the 5G era, in microwave and millimeter wave systems, filters are required to have high Q values and low loss coefficients, and thus waveguide filters are widely used. Rectangular waveguide filters are a widely used form of conventional transmission line for microwave signal guidance and processing. The rapid development of technology and technology inevitably leads to the development of miniaturized and highly integrated circuit system, and the huge volume of the rectangular waveguide filter makes the rectangular waveguide filter unable to be integrated in a planar circuit and the problems of electromagnetic compatibility and electromagnetic interference are not negligible. Compared with the traditional rectangular waveguide filter, the substrate integrated waveguide filter has the performance advantages of low radiation loss, strong anti-interference characteristic and the like, and more importantly, the substrate integrated waveguide filter has high integration level and low price, so that the substrate integrated waveguide filter becomes a favorite of microwave and millimeter wave frequency bands and is widely concerned and researched.
On the basis of the traditional rectangular substrate integrated waveguide band-pass filter, the middle of the wide side is raised to form a ridge, and the conductor column is used for replacing the waveguide side wall to form the ridge substrate integrated waveguide band-pass filter. Compared with the common substrate integrated waveguide band-pass filter, the ridged substrate integrated waveguide band-pass filter has the advantages of wide frequency band, low equivalent impedance and small size under the same frequency, and the bandwidth and the compactness are improved. Although conventional substrate integrated waveguide bandpass filters replace rectangular filters with their high quality factor and low loss, the pursuit of volume miniaturization is not at its end. The size miniaturization of the filter mainly means that the size perpendicular to the propagation direction is reduced, the cut-off frequency of the substrate integrated waveguide band-pass is reduced under the condition that the size is equivalent to a certain width, and the cut-off frequency of the ridge substrate integrated waveguide band-pass filter can be changed only by adjusting the width and the height of a ridge under the condition that the size of the waveguide is not changed.
As the semiconductor industry advances and feature sizes approach physical limits, conventional approaches to chip size reduction have failed to meet the demand for chip miniaturization.
Disclosure of Invention
The invention aims to provide a Through Silicon Via (TSV) -based ridged substrate integrated waveguide band-pass filter, which solves the problems that the conventional integrated waveguide band-pass filter is large in size and the bandwidth of a TSV-based substrate integrated waveguide band-pass filter with a common structure is small.
The invention adopts the technical scheme that the ridge-shaped substrate integrated waveguide band-pass filter based on the TSV comprises a high-resistance silicon substrate, wherein two rectangular metal grooves A are formed in the high-resistance silicon substrate, a plurality of pairs of opposite diaphragms are arranged on two sides in the metal grooves A, the diaphragms and the side walls of the metal grooves A are formed by arranging through silicon vias, a top surface insulating layer is arranged at the top of the high-resistance silicon substrate, rectangular metal grooves B are embedded in the top surface insulating layer, a ridge back surface metal layer is arranged in the middle of the bottom of the top surface insulating layer, the adjacent side walls of the two rectangular metal grooves A are connected through the ridge back surface metal layer, and the other two side walls of the two rectangular metal grooves A are connected through the rectangular metal.
The present invention is also technically characterized in that,
the metal groove A is formed by connecting a bottom metal layer, a side metal layer and a ridge side wall metal layer, and the side metal layer and the ridge side wall metal layer are oppositely arranged.
The bottom of the high-resistance silicon substrate is provided with a bottom surface insulating layer, and a bottom surface metal layer is embedded into the top of the bottom surface insulating layer.
The metal groove B is formed by connecting a top metal layer and side wall metal layers on two sides.
The bottom metal layer, the top metal layer and the back metal layer are all manufactured by adopting a RDL technology.
The side metal layer and the ridge side wall metal layer are both composed of a plurality of parallel through silicon vias, and the through silicon vias are manufactured by adopting a TSV technology.
Each TSV membrane consists of at least two parallel through silicon holes, the through silicon holes are embedded in the high-resistance silicon substrate, and the arrangement direction of the through silicon holes in the membrane is perpendicular to the arrangement direction of the through silicon holes in the side metal layer.
The top of the through silicon via in the TSV membrane is connected with the top surface insulating layer, the bottom of the through silicon via is connected with the bottom surface metal layer, and one side of the TSV membrane is connected with the side surface metal layer.
At least two pairs of TSV membranes are arranged in each metal groove A.
The top surface insulating layer and the bottom surface insulating layer are both made of silicon dioxide.
The invention has the advantages that the TSV technology is adopted to manufacture the diaphragm and the side wall metal, so that the size of the filter is greatly reduced, the filter is conveniently integrated in a miniaturized chip, stacked chip interconnection is realized, the length of an interconnection line is shortened, and the performance of the chip is greatly improved; the process of manufacturing the metal layer and the diaphragm by using the TSV technology and the RDL technology can be realized through etching and deposition processes, the manufacturing process is compatible with the CMOS process, and the cost is low; a resonator is formed between adjacent membranes in the filter, and electromagnetic waves are reflected for multiple times in the process of propagating in the cavity to obtain higher cut-off frequency, so that loss of high-frequency electromagnetic waves is reduced, and low-frequency electromagnetic waves are attenuated quickly to realize high-frequency filtering of the filter; by using a ridge structure the bandwidth of the filter is increased.
Drawings
FIG. 1 is a schematic perspective view of a TSV-based ridged substrate integrated waveguide band-pass filter according to the present invention;
FIG. 2 is a schematic longitudinal cross-sectional view of a TSV based ridged substrate integrated waveguide bandpass filter of the present invention;
fig. 3 is a schematic distribution diagram of through silicon vias in the TSV-based ridged substrate integrated waveguide band-pass filter according to the present invention.
In the figure, 1, a high-resistance silicon substrate, 2, a side metal layer, 3, a side metal layer, 4, a ridge side metal layer, 5, a top metal layer, 6, a bottom metal layer, 7, a ridge back metal layer, 8, a top insulating layer, 9, a bottom insulating layer, and 10, a diaphragm.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention relates to a ridge-shaped substrate integrated waveguide band-pass filter based on TSV (through silicon via), which is shown in a figure 1 and a figure 2 and comprises a high-resistance silicon substrate 1, wherein two rectangular metal grooves A are embedded in the high-resistance silicon substrate 1, eight pairs of rectangular diaphragms 10 which are opposite one by one are arranged on two sides in each metal groove A, the side walls of the diaphragms and the metal grooves A are formed by arranging through silicon vias, a resonator is formed between every two adjacent diaphragms, and electromagnetic waves obtain higher cut-off frequency through multiple reflections in the process of propagating in a cavity; for high frequency electromagnetic waves, the loss is reduced, and the low frequency electromagnetic waves are attenuated quickly to realize the high frequency filtering of the filter. The more the membranes 10, the more times the electromagnetic wave is reflected in the cavity.
The top of the high-resistance silicon substrate 1 is provided with a top surface insulating layer 8, a rectangular metal groove B is embedded in the top surface insulating layer 8, a ridge back metal layer 7 is arranged in the middle of the bottom of the top surface insulating layer 8, the adjacent side walls of the two rectangular metal grooves A are connected through the ridge back metal layer 7, and the other two side walls of the two rectangular metal grooves A are connected through the rectangular metal groove B.
The metal groove A is formed by connecting a bottom metal layer 6, a side metal layer 2 and a ridge side wall metal layer 4, and the side metal layer 2 and the ridge side wall metal layer 4 are oppositely arranged.
The bottom of the high-resistance silicon substrate 1 is provided with a bottom surface insulating layer 9, and a bottom surface metal layer 6 is embedded on the top of the bottom surface insulating layer 9. The metal groove B is formed by connecting a top metal layer 5 and side wall metal layers 3 on two sides. The top insulating layer 8 and the bottom insulating layer 9 are made of silicon oxide.
The top surface metal layer 5, the bottom surface metal layer 6 and the back surface metal layer 7 correspond to sidewalls of a conventional rectangular waveguide for transmitting electromagnetic waves.
The bottom metal layer 6, the top metal layer 5 and the back metal layer 7 are all manufactured by adopting a redistribution layer RDL technology, and the adopted metal is copper. The sidewall metal layer 3 is formed by first notching the top insulating layer 8 at opposite locations and then filling it with copper.
Referring to fig. 3, the side metal layer 2 and the ridge side wall metal layer 4 are both composed of 41 inner parallel cylindrical through-silicon vias and an outer high-resistance silicon substrate, each membrane 10 is composed of two parallel cylindrical through-silicon vias, and the arrangement direction of the through-silicon vias in the membrane 10 is perpendicular to the arrangement direction of the through-silicon vias in the side metal layer 2.
The silicon through hole is embedded in the high-resistance silicon substrate 1 and is manufactured by adopting a TSV technology. The spacing between adjacent through-silicon-vias in each membrane 10 is less than the spacing between each pair of membranes. The filter plate frequency can be changed by changing the spacing between each pair of diaphragms or the height of the diaphragms, without changing the overall filter volume.
The top of the through-silicon-via in the membrane 10 is connected with the top surface insulating layer 8, the bottom of the through-silicon-via in the membrane 10 is connected with the bottom surface metal layer 6, and one side of the membrane 10 is connected with the side surface metal layer 2. The through silicon via comprises inside metal post and the insulating layer of parcel in the metal post outside, and in this embodiment, the metal post that constitutes the through silicon via is the copper post, and the insulating layer is the silica layer.
Claims (10)
1. The utility model provides a ridge substrate integrated waveguide band-pass filter based on TSV, a serial communication port, including high resistant silicon substrate (1), the inside embedding of high resistant silicon substrate (1) has two rectangle metal bath A, both sides are provided with many to one relative diaphragm (10) in the metal bath A, diaphragm (10) and metal bath A's lateral wall are arranged by silicon through-hole and are constituteed, high resistant silicon substrate (1) top is provided with top surface insulating layer (8), the inside embedding of top surface insulating layer (8) has rectangle metal bath B, be provided with back surface metal layer (7) in the middle of top surface insulating layer (8) bottom, two rectangle metal bath A's adjacent lateral wall passes through back surface metal layer (7) and connects, two other lateral walls of two rectangle metal bath A pass through rectangle metal bath B and connect.
2. The TSV-based ridged substrate integrated waveguide band-pass filter according to claim 1, wherein the metal trench A is formed by connecting a bottom metal layer (6), a side metal layer (2) and a ridge sidewall metal layer (4), and the side metal layer (2) and the ridge sidewall metal layer (4) are arranged opposite to each other.
3. The TSV-based ridged substrate integrated waveguide band-pass filter according to claim 2, wherein the bottom of the high-resistance silicon substrate (1) is provided with a bottom insulating layer (9), and the bottom metal layer (6) is embedded on top of the bottom insulating layer (9).
4. The TSV based ridged substrate integrated waveguide band-pass filter of claim 3, wherein the metal trench B is formed by connecting a top metal layer (5) and two side wall metal layers (3).
5. The TSV based ridged substrate integrated waveguide bandpass filter of claim 4, wherein the bottom metal layer (6), the top metal layer (5) and the backside metal layer (7) are formed using RDL technology.
6. The TSV-based ridged substrate integrated waveguide band-pass filter according to claim 4, wherein the side metal layer (2) and the ridge sidewall metal layer (4) are each formed by a plurality of side-by-side Through Silicon Vias (TSV) fabricated using TSV technology.
7. The TSV-based ridged substrate integrated waveguide band-pass filter according to claim 6, wherein each of the membranes (10) is composed of at least two side-by-side through silicon vias embedded in the high-resistance silicon substrate (1), and the arrangement direction of the through silicon vias in the membranes (10) is perpendicular to the arrangement direction of the through silicon vias in the side metal layers (2).
8. The TSV-based ridged substrate integrated waveguide bandpass filter according to claim 7, wherein the through silicon via in the membrane (10) is connected to the top insulating layer (8) at the top, connected to the bottom metal layer (6) at the bottom, and connected to the side metal layer (2) on one side of the membrane (10).
9. The TSV based ridged substrate integrated waveguide band-pass filter according to claim 1, wherein at least two pairs of diaphragms (10) are disposed in each of said metal slots A.
10. The TSV based ridged substrate integrated waveguide bandpass filter of claim 3, wherein the top insulating layer (8) and the bottom insulating layer (9) are made of silicon dioxide.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113285190A (en) * | 2021-04-01 | 2021-08-20 | 西安理工大学 | L-shaped open-circuit branch-node band elimination filter |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101632156A (en) * | 2005-06-02 | 2010-01-20 | 伊利诺伊大学评议会 | Printable semiconductor structures and relevant the manufacturing and assemble method |
| US20100308925A1 (en) * | 2009-06-09 | 2010-12-09 | Seoul National University Industry Foundation | Method of producing micromachined air-cavity resonator, micromachined air-cavity resonator, band-pass filter and oscillator using the method |
| CN203326077U (en) * | 2013-06-27 | 2013-12-04 | 中国人民解放军理工大学 | Coplanar waveguide feed substrate integration waveguide broadband power divider |
| US20150092314A1 (en) * | 2013-09-27 | 2015-04-02 | Qualcomm Incorporated | Connector placement for a substrate integrated with a toroidal inductor |
| CN106537682A (en) * | 2014-05-14 | 2017-03-22 | 加普韦夫斯公司 | Waveguides and transmission lines in gaps between parallel conducting surfaces |
| US20170186710A1 (en) * | 2014-05-27 | 2017-06-29 | University Of Florida Research Foundation, Inc. | Glass interposer integrated high quality electronic components and systems |
| CN107895830A (en) * | 2017-11-07 | 2018-04-10 | 西安理工大学 | Organic media chamber rectangular waveguide filter and its manufacture method based on TSV |
| CN108832245A (en) * | 2018-05-04 | 2018-11-16 | 西安电子科技大学 | A kind of dielectric cavity substrate integrated wave guide structure and its preparation process based on through silicon via technology |
| CN109037925A (en) * | 2018-06-29 | 2018-12-18 | 中国人民解放军陆军工程大学 | A kind of integrated ridge gap waveguide of substrate and broadband circle polarized leaky-wave antenna |
| CN109494435A (en) * | 2018-10-31 | 2019-03-19 | 西安理工大学 | A kind of rectangular waveguide filter based on cylindrical type TSV |
| CN110783683A (en) * | 2018-07-31 | 2020-02-11 | 半导体元件工业有限责任公司 | Substrate integrated waveguide, method of manufacturing the same, and wireless communication device |
-
2020
- 2020-06-19 CN CN202010566782.0A patent/CN111934071B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101632156A (en) * | 2005-06-02 | 2010-01-20 | 伊利诺伊大学评议会 | Printable semiconductor structures and relevant the manufacturing and assemble method |
| US20100308925A1 (en) * | 2009-06-09 | 2010-12-09 | Seoul National University Industry Foundation | Method of producing micromachined air-cavity resonator, micromachined air-cavity resonator, band-pass filter and oscillator using the method |
| CN203326077U (en) * | 2013-06-27 | 2013-12-04 | 中国人民解放军理工大学 | Coplanar waveguide feed substrate integration waveguide broadband power divider |
| US20150092314A1 (en) * | 2013-09-27 | 2015-04-02 | Qualcomm Incorporated | Connector placement for a substrate integrated with a toroidal inductor |
| CN106537682A (en) * | 2014-05-14 | 2017-03-22 | 加普韦夫斯公司 | Waveguides and transmission lines in gaps between parallel conducting surfaces |
| US20170186710A1 (en) * | 2014-05-27 | 2017-06-29 | University Of Florida Research Foundation, Inc. | Glass interposer integrated high quality electronic components and systems |
| CN107895830A (en) * | 2017-11-07 | 2018-04-10 | 西安理工大学 | Organic media chamber rectangular waveguide filter and its manufacture method based on TSV |
| CN108832245A (en) * | 2018-05-04 | 2018-11-16 | 西安电子科技大学 | A kind of dielectric cavity substrate integrated wave guide structure and its preparation process based on through silicon via technology |
| CN109037925A (en) * | 2018-06-29 | 2018-12-18 | 中国人民解放军陆军工程大学 | A kind of integrated ridge gap waveguide of substrate and broadband circle polarized leaky-wave antenna |
| CN110783683A (en) * | 2018-07-31 | 2020-02-11 | 半导体元件工业有限责任公司 | Substrate integrated waveguide, method of manufacturing the same, and wireless communication device |
| CN109494435A (en) * | 2018-10-31 | 2019-03-19 | 西安理工大学 | A kind of rectangular waveguide filter based on cylindrical type TSV |
Non-Patent Citations (3)
| Title |
|---|
| FENGJUAN WANG 等: "Miniaturized SIW Bandpass Filter Based on TSV Technology for THz Applications", 《IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY》 * |
| M. WIETSTRUCK 等: "Design Optimization of Through-Silicon Vias for Substrate-Integrated Waveguides embedded in High-Resistive Silicon Interposer", <2018 IEEE 20TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC)> * |
| 杜林: "新型微波/毫米波基片集成波导滤波器", 《中国博士学位论文全文数据库》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113285190A (en) * | 2021-04-01 | 2021-08-20 | 西安理工大学 | L-shaped open-circuit branch-node band elimination filter |
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Effective date of registration: 20221109 Address after: 062450 Hejian Yingzhou Economic Development Zone, Hejian City, Cangzhou City, Hebei Province Patentee after: HEBEI PENGBO COMMUNICATION EQUIPMENT Co.,Ltd. Address before: 710048 Shaanxi province Xi'an Beilin District Jinhua Road No. 5 Patentee before: XI'AN University OF TECHNOLOGY |