CN111919297A - 一种半导体封装结构及其封装方法 - Google Patents
一种半导体封装结构及其封装方法 Download PDFInfo
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- CN111919297A CN111919297A CN201880091996.8A CN201880091996A CN111919297A CN 111919297 A CN111919297 A CN 111919297A CN 201880091996 A CN201880091996 A CN 201880091996A CN 111919297 A CN111919297 A CN 111919297A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 68
- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 147
- 239000002184 metal Substances 0.000 claims abstract description 147
- 239000000758 substrate Substances 0.000 claims abstract description 138
- 238000003466 welding Methods 0.000 claims abstract description 71
- 239000010410 layer Substances 0.000 claims description 228
- 229910000679 solder Inorganic materials 0.000 claims description 64
- 239000012790 adhesive layer Substances 0.000 claims description 33
- 229910052709 silver Inorganic materials 0.000 claims description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 23
- 239000004332 silver Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 21
- 238000007789 sealing Methods 0.000 claims description 16
- 239000003292 glue Substances 0.000 claims description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 238000009713 electroplating Methods 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000007731 hot pressing Methods 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000011135 tin Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000011133 lead Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 description 9
- 239000004033 plastic Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
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- 230000000694 effects Effects 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 3
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical group [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
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- 229920000647 polyepoxide Polymers 0.000 description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
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- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
一种半导体封装结构及其封装方法，该半导体封装结构包括：芯片(20)，包括裸片，裸片的第一面上设置有信号源；裸片上与第一面相对的第二面上设置有第一金属层(26)，裸片两面的结构通过过孔一一对应连接；基板(10)，与芯片(20)层叠设置，且基板(10)上设置有信号管脚，其中，信号管脚通过焊接件与第一金属层(26)连接。在上述技术方案中，通过焊接的方式将芯片(20)与基板(10)电连接，提高了基板(10)与芯片(20)之间的连接强度。此外，通过采用焊接的方式，精度高，便于器件小型化后部件的连接。
Description
PCT国内申请，说明书已公开。
Claims (20)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2018/081489 WO2019183983A1 (zh) | 2018-03-31 | 2018-03-31 | 一种半导体封装结构及其封装方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111919297A true CN111919297A (zh) | 2020-11-10 |
Family
ID=68059416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880091996.8A Pending CN111919297A (zh) | 2018-03-31 | 2018-03-31 | 一种半导体封装结构及其封装方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN111919297A (zh) |
| WO (1) | WO2019183983A1 (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050098886A1 (en) * | 2003-11-08 | 2005-05-12 | Chippac, Inc. | Flip chip interconnection pad layout |
| US20100072606A1 (en) * | 2008-09-25 | 2010-03-25 | Wen-Kun Yang | Stacking Package Structure with Chip Embedded Inside and Die Having Through Silicon Via and Method of the same |
| KR20120091867A (ko) * | 2011-02-10 | 2012-08-20 | 삼성전자주식회사 | ＣｏＣ 구조의 반도체 패키지 및 그 패키지 제조방법 |
| CN106783765A (zh) * | 2017-01-23 | 2017-05-31 | 合肥雷诚微电子有限责任公司 | 一种小型化高散热性的线性功率放大器结构及其制作方法 |
| CN107644867A (zh) * | 2017-09-07 | 2018-01-30 | 维沃移动通信有限公司 | 一种PoP封装件及其制作方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1178288C (zh) * | 2001-07-16 | 2004-12-01 | 联测科技股份有限公司 | 薄型化倒装芯片半导体装置的封装方法 |
| KR20080002491A (ko) * | 2006-06-30 | 2008-01-04 | 주식회사 하이닉스반도체 | 플립 칩 패키지 |
| US9515017B2 (en) * | 2014-12-18 | 2016-12-06 | Intel Corporation | Ground via clustering for crosstalk mitigation |
-
2018
- 2018-03-31 WO PCT/CN2018/081489 patent/WO2019183983A1/zh active Application Filing
- 2018-03-31 CN CN201880091996.8A patent/CN111919297A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050098886A1 (en) * | 2003-11-08 | 2005-05-12 | Chippac, Inc. | Flip chip interconnection pad layout |
| US20100072606A1 (en) * | 2008-09-25 | 2010-03-25 | Wen-Kun Yang | Stacking Package Structure with Chip Embedded Inside and Die Having Through Silicon Via and Method of the same |
| KR20120091867A (ko) * | 2011-02-10 | 2012-08-20 | 삼성전자주식회사 | ＣｏＣ 구조의 반도체 패키지 및 그 패키지 제조방법 |
| CN106783765A (zh) * | 2017-01-23 | 2017-05-31 | 合肥雷诚微电子有限责任公司 | 一种小型化高散热性的线性功率放大器结构及其制作方法 |
| CN107644867A (zh) * | 2017-09-07 | 2018-01-30 | 维沃移动通信有限公司 | 一种PoP封装件及其制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019183983A1 (zh) | 2019-10-03 |
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