CN111916992A - 半导体封装和lidar发射单元 - Google Patents
半导体封装和lidar发射单元 Download PDFInfo
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- CN111916992A CN111916992A CN202010377796.8A CN202010377796A CN111916992A CN 111916992 A CN111916992 A CN 111916992A CN 202010377796 A CN202010377796 A CN 202010377796A CN 111916992 A CN111916992 A CN 111916992A
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- semiconductor package
- emitting laser
- connection structure
- interposer
- surface emitting
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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Abstract
本发明涉及半导体封装以及包括这种半导体封装的LIDAR发射单元。该半导体封装包括表面发射激光器、至少一个用于该表面发射激光器的驱动器电路、连接结构和至少一个中介层。所述连接结构包括多个焊料凸块。表面发射激光器经由至少一个中介层和连接结构电连接到至少一个驱动器电路。
Description
技术领域
本发明涉及半导体封装,更确切地说,涉及包括表面发射激光器、至少一个用于该表面发射激光器的驱动器电路和至少一个中介层的半导体封装,以及包括这种半导体封装的LIDAR发射单元。
背景技术
在激光阵列装置中,例如LIDAR应用(光检测和测距,基于光的检测和距离测量),经常使用表面发射激光器,即所谓的VCSEL(垂直腔表面发射激光器,具有垂直谐振器的表面发射激光器)。这些表面发射激光器与相应的驱动器电路一起布置在半导体封装上。在这种情况下,通常在驱动器电路和表面发射激光器之间的电接触是通过键合线进行的。
在诸如汽车领域的一些应用中,这样的键合线具有由为了消除可能导致短路的接触的最小距离限制的距离(也称为英文“节距(pitch)”)。结果,表面发射激光器中的激光二极管的阵列具有基于键合线的最小距离的最小距离。在至少需要表面发射激光器的分辨率的情况下,因此预先确定了激光器的最小尺寸,这会导致半导体制造的高成本,因为半导体表面本身以及错误率都增加了对于较大的半导体元件情况下次品,会导致更高的成本。
因此,根据本发明的目的是提供更便宜的激光器阵列,其可用于汽车领域,例如LIDAR应用中。
该目的通过根据权利要求1的半导体封装和通过根据权利要求15的LIDAR发射单元来实现。
发明概述
本发明基于这样一种思想,即通过所谓的中间层(直译为“中介层”)进行接触,而不是通过键合线进行接触,其中,中介层通过所谓的焊料凸块(英文“bumps”)与表面发射激光器和相应的驱动器电路进行接触。由于这样的中介层也可以在半导体制造过程中制造,因此它们可以具有非常小的触点节距,这使得可以使用具有窄阵列间距的表面发射激光器。结果,虽然表面发射激光器的分辨率保持不变,但是可以减小激光器的尺寸,从而可以实现廉价的激光器阵列。
因此,示例性实施例创建了半导体封装,其包括表面发射激光器、用于该表面发射激光器的至少一个驱动器电路、连接结构和至少一个中介层。所述连接结构包括多个焊料凸块。表面发射激光器经由至少一个中介层和连接结构电连接到至少一个驱动器电路。如上文已经所陈述的,根据本发明的目的是通过这种半导体封装来实现的。
在一些变型中,半导体封装还包括灌封结构(也称为英文“potting”)。该灌封结构可以设计成屏蔽连接结构免受外部效应影响。这使得可以实现半导体封装的更大的稳健性,特别是在原始汽车领域。
在这种情况下,灌封结构可以至少部分地布置在表面发射激光器与半导体封装的封装基板之间。因此,灌封结构可以是半导体封装的所谓底部填充的一部分。
然而,表面发射激光器的部分可以与封装基板直接接触。这允许将表面发射激光器稳定地紧固到封装基板。
至少一个中介层例如可以至少部分垂直地布置在表面发射激光器和封装基板之间。可替代地,至少一个中介层可以由封装基板形成。这实现了平坦的构造。
可替代地,至少一个表面发射激光器可以至少部分地垂直布置在至少一个中介层与封装基板之间。这任选地使得能够将表面发射激光器和至少一个驱动器电路更稳定地紧固在封装基板上。
在示例性实施例中,多个焊料凸块对应于多个微凸块。由此可以实现特别窄的节距。
在至少一些示例性实施例中,半导体封装包括另外的连接结构。封装基板的连接结构可以经由另外的连接结构电连接到至少一个驱动器电路。这使得至少一个驱动器电路能够经由封装基板电接触。
因此,半导体封装还可以包括另外的灌封结构。所述另外的灌封结构可以被设计为屏蔽所述另外的连接结构以免受外部效应影响。这使得半导体封装具有更大的稳健性,特别是在恶劣的汽车环境中。
在这种情况下,至少一个驱动器电路可以经由各种接触技术电连接到封装基板的连接结构。因此,至少一个驱动器电路可以在每种情况下通过另外的连接结构的一根或多根键合线电连接到封装基板的连接结构。可替代地或附加地,至少一个驱动器电路可以在每种情况下通过另外的连接结构的一个或多个焊料凸块电连接到封装基板的连接结构。两种接触技术在制造、成本和稳健性方面都有优点和缺点。
至少一个驱动器电路可以例如在每种情况下经由至少一个中介层通过另外的连接结构的一个或多个焊料凸块电连接到封装基板的连接结构。因此,中介层可以用作在其上布置其余部件的支撑件。
在至少一些示例性实施例中,至少一个中介层是至少一个半导体部件。这使得可以制造特别精细的结构,因此也可以制造特别小的节距。
至少一个中介层的水平表面可以至少部分地侧向伸出表面发射激光器和至少一个驱动器电路的水平表面。这使得能够经由键合线接触中介层,例如为了使中介层与封装基板电接触。
因此,示例性实施例创建了用于激光阵列和激光雷达应用的电子部件的稳健和/或小型化的结构。在这种情况下,通过使用新的微电子结构和连接技术,例如使用凸块,可以实现激光二极管距离的进一步小型化。由于特殊的半导体材料非常昂贵,因此可以节省芯片面积并节省成本。另外,这种连接比键合线的连接更稳健。
附图说明
在下文中,参考附图中所示的示例性实施方式详细描述其他有利的构造,然而,总体上本发明通常不限于示例性实施方式。
图1示出了半导体封装的示例性实施例。
图2示出了半导体封装的另一示例性实施例,该半导体封装包括至少一个灌封结构。
图3示出了半导体封装的另一示例性实施例,其中在封装基板和表面发射激光器之间布置有两个中介层。
图4示出了半导体封装的另一示例性实施例,其中表面发射激光器的部分与封装基板直接接触。
图5示出了半导体封装的另一示例性实施例,其中表面发射激光器和两个驱动器电路被布置在中介层上。
发明详述
现在参照示出一些示例性实施例的附图详细描述示例性实施例。在仅示出一些示例性实施例的附图的以下描述中,相同的附图标记可以表示相同或可比较的部件。此外,汇总的附图标记可以用于在一个示例性实施例中或在一个附图中多次出现但关于一个或多个特征共同描述的部件和对象。在这种情况下,垂直延伸部或垂直布置被限定为与封装基板的正面正交,并且横向延伸部或横向布置被限定为平行于封装基板的正面。
图1示出了半导体封装的示例性实施例。半导体封装100包括封装基板10、表面发射激光器20、用于表面发射激光器20的两个驱动器电路30、连接结构40和两个中介层50。该连接结构包括多个焊料凸块。表面发射激光器经由至少一个中介层和连接结构电连接到至少一个驱动器电路。
图1所示的半导体封装构成根据本发明的半导体封装的示例性实施例。在这种情况下,半导体封装是指提供半导体封装以容纳至少一个半导体芯片,例如表面发射激光器和至少一个驱动器电路,并提供用于连接至少一个半导体芯片的接触结构。在这种情况下,半导体封装的各个部件,特别是封装基板,不需要由半导体材料制成。在示例性实施例中,封装基板可以是任何封装基板,例如,由印刷电路板材料制成的封装基板。在这种情况下,封装基板可以是(有机)塑料基板或陶瓷基板。在一些示例性实施例中,没有导体迹线穿过封装基板或在封装基板上延伸。因此,封装基板也可以是铝封装基板。
在这种情况下,半导体封装可以是多芯片模块,即它可以容纳不止一个芯片,例如表面发射激光器和至少一个驱动器电路。在这种情况下,在图1的半导体封装中,两个驱动器电路30和表面发射激光器20直接布置在封装基板上,或者它们与半导体基板直接接触。在本文中,“直接布置在...上”或“直接接触”仅表示在封装基板和相应部件(驱动器电路、表面发射激光器或随后也是中介层)之间布置诸如焊料紧固件或紧固粘合剂等紧固装置。特别地,在封装基板和相应的部件之间未布置灌封结构,即所谓的灌封。
在图1的示例性实施例中(以及在图2的示例性实施例中),每个中介层垂直地布置在表面发射激光器和两个驱动器电路之一的上方。换句话说,至少一个表面发射激光器20以及两个驱动器电路至少部分地垂直布置在中介层50和封装基板10之间。
在图1至图5的示例性实施例中,多个焊料凸块由微凸块(所谓的“微型凸块”)形成。微凸块构成了一种特殊形式的焊料凸块,其定义是它们比“普通”焊料凸块小。微凸块的直径可以小于50μm(或小于30μm)。已知具有小得多的直径的微凸块低至1μm。微凸块可以使相邻的焊料凸块之间的间距特别小,从而使表面发射激光器的阵列间距特别小。在这种情况下,多个焊料凸块中的相邻焊料凸块之间的间距可以小于100μm,例如小于80μm或小于50μm。在这种情况下,相邻意味着将两个间距已测量的焊料凸块布置在同一部件(激光器或驱动器电路)上。作为微凸块的替代,也可以使用所谓的铜柱(英文“CU pillar”)。在本申请中,这些也算作焊料凸块。
为了能够使中介层和表面发射激光器或两个驱动器电路彼此电接触,可以使用所谓的回流技术,其中在中介层放置在激光器和驱动器电路上之前将凸块的材料部分液化(或者如果该中介层或多个中介层布置在封装基板和激光器/驱动器电路之间则是相反的),并且具有部分液化凸块的中介层放置在表面发射激光器和驱动器电路的相应触点上。在这种情况下,部分液化的凸块在固化时形成自对准结构,使得中介层以精确配合的方式对准表面发射激光器和各个驱动器电路的触点。液化可以例如通过热空气引起。
在至少一些示例性实施例中,中介层是半导体部件,即,中介层可以由诸如硅、碳化硅或砷化镓的半导体材料制成。换句话说,中介层可以由半导体晶片制成或在半导体晶片上制造。替代地,中介层本身可以包括允许精细的粒状导体迹线和触点的封装基板,即,中介层可以由另外的封装基板形成。在这种情况下,中介层可以包括用于接触表面发射激光器的第一多个触点,用于驱动器电路接触的第二多个触点,以及在第一多个触点和第二多个触点之间产生电连接的多个导体迹线。在这种情况下,第一多个触点和第二多个触点可以布置在中介层的同一侧。
在至少一些示例性实施例中,表面发射激光器是VCSEL阵列,即,表面发射激光器包括在表面发射激光器的第一横向延伸部中的多个发射器元件和在表面发射激光器的正交于第一横向延伸部的第二横向延伸部中的多个发射器元件。例如,表面发射激光器可以包括以矩阵布置布置的多个发射器元件。可替代地,可以选择不同的布置,例如基于六边形的布置。
在这种情况下,可以逐行地控制多个激光发射器,即,每个驱动器电路可以包括多个驱动器单元,其中每个单元被配置为控制表面发射激光器的一条线。表面发射激光器的每条线又可以包括多个发射器元件。在这种情况下,如图1至5所示,如果使用多个驱动器电路,则可以以“交错”方式来实现对线的控制。这意味着在两个驱动器电路的情况下,可以通过两个驱动器电路逐行地交替控制表面发射激光器的线。进而可以实现较小的线间距。
例如,表面发射激光器可以是用于LIDAR发射单元的表面发射激光器。该LIDAR发射单元可以对应于半导体封装,或者LIDAR发射单元可以包括半导体封装。可以将表面发射激光器构造成通过多个发射器元件产生多个激光束,所述多个发射器元件被设置为经由透射光学器件来透射,在这种情况下,优选地使用激光脉冲。
所述至少一个驱动器电路被配置为控制表面发射激光器的至少一部分。在这种情况下,至少一个驱动器电路可以被配置为基于控制信号生成多个电源信号,以便控制多个发射器元件。换句话说,每个驱动器电路可以被配置为控制表面发射激光器的多个发射器元件的电源(基于控制信号)。在这种情况下,每个驱动器电路可以被配置为经由另外的连接结构来接收控制信号。半导体封装可以包括另外的连接结构。封装基板10的连接结构可以经由该另外的连接结构电连接至至少一个驱动器电路30。控制信号可以通过另外的连接结构传输。在这种情况下,另外的连接结构形成为图1和图2中的键合线72。换句话说,至少一个驱动器电路30可以在各种情况下经由另外的连接结构的一根或多根键合线72电连接到封装基板10的连接结构。在这种情况下,封装基板的连接结构例如可以包括用于将半导体封装连接至另一部件的第一多个触点(接触垫)和用于将驱动器电路/驱动器电路连接至连接结构的第二多个触点。可替代地,相同的接触垫可以用于将半导体封装连接到另一部件以及将驱动器电路/多个驱动器电路连接到连接结构。在至少一些示例性实施例中,连接结构还包括多个导体迹线,以将第一多个触点与第二多个触点电连接。
如上面已经描述的,半导体封装可以是LIDAR发射单元的一部分或对应于LIDAR发射单元。LIDAR发射单元通常是LIDAR测量***的部件。因此,示例性实施例还创建了LIDAR测量***,其包括具有半导体封装的LIDAR发射单元和LIDAR接收单元。根据对现有技术的说明(WO2017/081294A1),LIDAR测量***以其基本结构进行配置。
LIDAR接收单元和/或LIDAR发射单元有利地被配置为焦平面阵列配置。各个单元的元件基本上布置在一个平面中,优选地布置在芯片上。优选地,各个单元在相应的光学器件,透射光学器件或接收光学器件的焦点处布置在LIDAR测量***上。传感器元件或发射器元件尤其布置在接收光学器件的焦点处。这样的光学器件可以例如由光学透镜***形成。
LIDAR接收单元包括多个传感器元件,其优选形成为SPAD,单光子雪崩二极管。LIDAR发射单元包括多个发射器元件,用于发射激光,有利地发射激光脉冲。发射器元件有利地配置为VCSEL,垂直腔表面发射激光器。
发射单元包括发射器元件,发射器元件分布在表面发射激光器的发射芯片的表面上。接收单元包括分布在接收芯片的表面上的传感器元件。透射光学器件分配给发射芯片,接收光学器件分配给接收芯片。光学器件使来自相应芯片上空间区域的光成像。空间区域对应于对物体进行研究或感知的测量***的可视范围。发射单元和接收单元的空间区域基本相同。透射光学器件将发射器元件成像到立体角上,该立体角形成空间区域的部分区域。因此,发射器元件以该立体角发射激光。发射器元件一起覆盖整个空间区域。
接收光学器件将传感器元件成像到立体角上,该立体角形成空间区域的部分区域。所有传感器元件的数量覆盖整个空间区域。发射器元件和传感器元件彼此观察相同的立体角图像,并因此相互分配。在正常情况下,发射器元件的激光始终会成像到相关的传感器元件上。任选地,多个传感器元件布置在发射器元件的立体角内。
为了确定空间区域内的物体,测量***执行测量过程。根据测量***及其电子设备的构造结构,这种测量过程包括一个或多个测量周期。
优选地,使用时间相关的单光子计数方法TCSPC。在这种情况下,特别是通过SPAD来检测各个入射光子,并且将传感器元件的触发时间,也称为检测时间,存储在存储元件中。检测时间与发射激光的参考时间有关。可以根据该差确定激光的传播时间,由此可以确定物体的距离。
一方面可以通过激光来触发传感器元件,另一方面可以通过环境辐射来触发传感器元件。在物体有特定距离的情况下,激光总是同时入射,而环境光在任何时候都具有相同的概率触发传感器元件。当多次进行测量时,尤其是在多个测量周期中,传感器元件的触发在检测时间相加,该检测时间对应于激光相对于物体距离的传播时间,而环境辐射的触发在测量周期的整个测量时间内均匀分布。测量对应于激光的发射和随后的检测。存储在存储元件中的测量过程的各个测量周期的数据使得可以评估多个确定的检测时间,以便确定物体的距离。
传感器元件有利地连接到时间到数字转换器TDC,该时间数字转换器TDC将传感器单元的触发时间存储在存储元件中。这样的存储元件可以被配置为例如短期存储设备或长期存储设备。TDC用传感器元件检测到入射光子的时间填充用于测量过程的存储单元。这可以通过基于存储元件数据的直方图来图形表示。在直方图中,测量周期的持续时间分为短时间段,即所谓的仓(bin)。如果触发了传感器元件,则TDC将仓的值增加一。填充对应于激光脉冲的传播时间(即检测时间与参考时间之间的差)的仓。
图2示出了半导体封装的另一示例性实施例,该半导体封装包括至少一个灌封结构60。半导体封装200包括封装基板10、表面发射激光器20、两个用于表面发射激光器20的驱动器电路30,连接结构40和两个中介层50。连接结构包括多个焊料凸块。表面发射激光器经由至少一个中介层和连接结构电连接到至少一个驱动器电路。因此,在许多方面,半导体封装200具有与图1的半导体封装相似的结构。
除了图1的半导体封装之外,半导体封装200还包括灌封结构60。该灌封结构由灌封材料例如由合成树脂设计。在这种情况下,例如,可以使用热塑性或热固性塑料。灌封结构60被设计成屏蔽连接结构40以免受外部效应影响。因此,灌封结构60可以至少在多个焊料凸块不与中介层(该表面发射激光器的至少一个驱动器结构)的触点接触的那些点处完全封闭连接结构40,即多个焊料凸块。在图2的半导体封装中,灌封结构60至少部分地封闭至少一个驱动器电路30和连接结构40以及表面发射激光器和中介层。在此应注意确保表面发射激光器在表面发射激光器的发射方向上不被灌封结构覆盖(除非透明材料用于灌封结构)。
如图2进一步所示,灌封结构60可以进一步设计成屏蔽另外的连接结构(具有键合线72)以免受外部效应影响。换句话说,灌封结构60可至少在另外的连接结构40不与封装基板的连接结构或不与至少一个驱动器电路的触点接触的地方至少完全封闭另外的连接结构40,即键合线72。
结合先前(例如,图1)描述的概念或示例提及了半导体封装200的更多细节和方面。半导体封装200可以包括一个或多个另外的任选特征,其与所提出的概念或所描述的示例的一个或多个方面相对应,例如先前或随后所描述的。
图3示出了半导体封装的另一示例性实施例,其中两个中介层50被布置在封装基板10与表面发射激光器20之间。半导体封装300包括封装基板10、表面发射激光器20、两个用于表面发射激光器20的驱动器电路30、连接结构40和两个中介层50。该连接结构包括多个焊料凸块。表面发射激光器经由两个中介层和连接结构电连接到至少一个驱动器电路。因此,在许多方面,半导体封装300具有与图1和/或图2的半导体封装相似的结构。
与图1和图2的示例性实施例相比,在图3的示例性实施例中,两个中介层50至少部分地垂直布置在表面发射激光器20与封装基板10之间。此外,两个中介层50至少部分地垂直布置在中介层之一与封装基板之间。在另一个可行的实施例中,如果封装基板是由印刷电路板材料或半导体材料制成的,则该中介层或多个中介层50可以集成在封装基板10中,即由封装基板10形成。
因此,灌封结构60也至少部分地布置在表面发射激光器20与封装基板10之间,并且至少部分地布置在两个驱动器电路与封装基板之间。在这种情况下,灌封结构可用作所谓的底部填充。灌封结构可以进一步被配置为屏蔽另外的连接结构(在这里由焊料凸块74形成)以免受外部效应影响。从图3中还可以看出,灌封结构还至少部分地横向布置在表面发射激光器与两个驱动器电路之间。
如以上已经描述的,半导体封装300还包括另外的连接结构。封装基板10的连接结构(接触垫,未示出)经由另外的连接结构电连接至至少一个驱动器电路30。在这种情况下,另外的连接结构包括布置在驱动器电路与封装基板之间的一个或多个焊料凸块或焊料球74。换句话说,至少一个驱动器电路30在各种情况下通过另外的连接结构的一个或多个焊料凸块74或焊球电连接到封装基板10的连接结构。另外,该另外的连接结构包括导体迹线,该导体迹线将焊料凸块74电连接至适合于连接半导体封装的封装基板(未示出)的触点。
结合先前(例如,图1)描述的概念或示例提到了半导体封装300的更多细节和方面。半导体封装300可以包括一个或多个附加的任选特征,其对应于所提出的概念或所描述的示例的一个或多个方面,诸如之前或之后已经描述的。
图4示出了半导体封装400的另一示例性实施例,其中表面发射激光器20的一部分与封装基板10直接接触。半导体封装400包括封装基板10、表面发射激光器20、用于表面发射激光器20的两个驱动器电路30、连接结构40和两个中介层50。该连接结构包括多个焊料凸块。表面发射激光器经由两个中介层和连接结构电连接到至少一个驱动器电路。因此,在许多方面,半导体封装400具有与图1至图3的半导体封装之一类似的结构,特别是与图3的半导体封装类似。
同样如图3所示,至少一个中介层50至少部分垂直地布置在表面发射激光器20与封装基板10之间,并且灌封结构60至少部分地布置在表面发射激光器20与封装基板10之间。与图3相比,表面发射激光器20的至少一部分与封装基板10直接接触。在这种情况下,封装基板可以是带有x-y稳定器的支撑件(英文,底座(submount))。为此,封装基板可以具有与表面发射激光器20直接接触的稳定部分12。该稳定部分是相对于被设置为与表面发射激光器直接接触的封装基板的剩余表面的升高部分。在这种情况下,可以将稳定部分设计成侧向稳定表面发射激光器,即,防止表面发射激光器在侧向平面上的任何运动。
结合先前(例如,图1至图3)描述的概念或示例提及了半导体封装400的更多细节和方面。半导体封装400可以包括一个或多个另外的任选特征,其与所提出的概念或所描述的示例的一个或多个方面相对应,例如先前或随后所描述的。
图5示出了半导体封装500的另一示例性实施例,其中,表面发射激光器20和两个驱动器电路30布置在中介层50上。半导体封装500包括封装基板10、表面发射激光器20、两个用于表面发射激光器20的驱动器电路30、连接结构40和(单个)中介层50。该连接结构包括多个焊料凸块。表面发射激光器经由中介层和连接结构电连接到至少一个驱动器电路。因此,在许多方面,半导体封装400具有与图1至图4的半导体封装相似的结构。
在半导体封装500的情况下,中介层50也垂直地布置在表面发射激光器20与封装基板10之间。在这种情况下,中介层甚至形成用于表面发射激光器20和两个驱动器电路30的平台,即在这种情况下,中介层、激光器、驱动器电路和连接结构的组合可以作为有结合力的单元安装在封装基板40上。为此,中介层50可以经由连接结构40与表面发射激光器20和驱动器电路30非正耦合。在该情况下,中介层50和封装基板10是两个独立的部件。可替代地,至少一个中介层50可以由封装基板50形成,或者中介层50可以形成封装基板。在这种情况下,也形成中介层50的封装基板可以是半导体部件。如在其他示例性实施例中一样,灌封结构60至少部分地布置在表面发射激光器20和/或驱动器电路30与封装基板10之间。
如图5所示,半导体封装500可以包括另外的连接结构。封装基板10的连接结构可以经由另外的连接结构电连接至至少一个驱动器电路30。如图5所示,这可以通过焊料凸块或焊料球来实现。换句话说,至少一个驱动器电路30可以在各种情况下通过另外的连接结构的一个或多个焊料凸块74电连接到封装基板10的连接结构。在这种情况下,至少一个驱动器电路30可以在各种情况下经由至少一个中介层50通过另外的连接结构的一个或多个焊料凸块74电连接到封装基板的连接结构。可替代地,可以使用键合线。换句话说,至少一个驱动器电路30可以经由另外的连接结构的一个或多个键合线电连接到封装基板10的连接结构。在这种情况下,类似于图1和图2,一个或多个键合线72可以连接到封装基板10的连接结构和驱动器电路的触点。可替代地,一个或多个键合线可以连接到封装基板10的连接结构和中介层50的触点(未示出)。为此,至少一个中介层50的水平表面可以横向至少部分地突出超过表面发射激光器的水平表面和至少一个驱动器电路,从而形成边缘,在该边缘处,一个或多个键合线可被紧固到中介层50的触点。在该情况下,另外的连接结构可包括一个或多个焊料凸块74(用于驱动器电路与中介层之间的电连接)以及一个或多个键合线(用于中介层与封装基板的连接结构之间的电连接)。在这种情况下,另外的连接结构又可以由另外的灌封结构80屏蔽。
结合先前(例如,图1至图4)描述的概念或示例提到了半导体封装500的更多细节和方面。半导体封装500可以包括一个或多个附加的任选特征,其对应于所提出的概念或所描述的示例的一个或多个方面,诸如先前或随后所描述的。
附图标记列表
10 封装基板
12 稳定部分
20 表面发射激光器
30 驱动器电路
40 连接结构
50 中介层
60 灌装结构
72 键合线
74 焊料凸块
80 另外的灌封结构
100、200、300、400、500 半导体封装
Claims (15)
1.半导体封装(100;200;300;400;500),包括:
表面发射激光器(20);
用于表面发射激光器(20)的至少一个驱动器电路(30);
连接结构(40),其中,所述连接结构包括多个焊料凸块;以及
至少一个中介层(50),其中,所述表面发射激光器经由所述至少一个中介层和所述连接结构电连接到所述至少一个驱动器电路。
2.根据权利要求1所述的半导体封装,还包括灌封结构(60),其中,所述灌封结构(60)设计成屏蔽所述连接结构(40)免受外部效应影响。
3.根据权利要求2所述的半导体封装,其中,所述灌封结构(60)至少部分地布置在所述表面发射激光器(20)与所述半导体封装的封装基板(10)之间。
4.根据权利要求3所述的半导体封装,其中,所述表面发射激光器(20)的至少一部分与所述封装基板(10)直接接触。
5.根据前述权利要求中的一项所述的半导体封装,其中,所述至少一个中介层(50)至少部分地垂直布置在所述表面发射激光器(20)和所述半导体封装的封装基板(10)之间,或者其中,所述至少一个中介层(50)由所述封装基板(10)形成。
6.根据前述权利要求中的一项所述的半导体封装,其中,所述至少一个表面发射激光器(20)至少部分地垂直地布置在所述至少一个中介层(50)与所述半导体封装的封装基板(10)之间。
7.根据前述权利要求中的一项所述的半导体封装,其中,所述多个焊料凸块对应于多个微凸块。
8.根据前述权利要求中的一项所述的半导体封装,包括另外的连接结构,其中,所述半导体封装的封装基板(10)的一个连接结构经由所述另外的连接结构电连接到所述至少一个驱动器电路(30)。
9.根据权利要求8所述的半导体封装,还包括另外的灌封结构(80),其中,所述另外的灌封结构设计成屏蔽所述另外的连接结构免于外部效应影响。
10.根据权利要求8或9中的一项所述的半导体封装,其中,所述至少一个驱动器电路(30)在每种情况下通过所述另外的连接结构的一根或多根键合线(72)电连接到所述封装基板(10)的连接结构。
11.根据权利要求8至10中的一项所述的半导体封装,其中,所述至少一个驱动器电路(30)在每种情况下通过所述另外的连接结构的一个或多个焊料凸块(74)电连接到所述封装基板(10)的连接结构。
12.根据权利要求11所述的半导体封装,其中,所述至少一个驱动器电路(30)在每种情况下分别经由所述至少一个中介层(50)通过所述另外的连接结构(70)的一个或多个焊料凸块(74)电连接到所述封装基板(10)的连接结构。
13.根据前述权利要求中的一项所述的半导体封装,其中,至少一个中介层(50)是至少一个半导体组件。
14.根据前述权利要求中的一项所述的半导体封装,其中,所述至少一个中介层(50)的水平表面至少部分地侧向伸出所述表面发射激光器和所述至少一个驱动器电路的水平表面。
15.LIDAR发射单元,包括根据前述权利要求中的一项所述的半导体封装(100;200;300;400;500)。
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JP2009283712A (ja) * | 2008-05-22 | 2009-12-03 | Fuji Xerox Co Ltd | 光通信モジュールおよび光通信装置 |
US20110044369A1 (en) * | 2009-08-20 | 2011-02-24 | International Business Machines Corporation | Silicon carrier optoelectronic packaging |
CN103137602A (zh) * | 2011-11-30 | 2013-06-05 | 台湾积体电路制造股份有限公司 | 带有抑噪部件的中介层以及半导体封装件 |
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JP2004031508A (ja) * | 2002-06-24 | 2004-01-29 | Nec Corp | 光電気複合モジュールおよびそのモジュールを構成要素とする光入出力装置 |
JP2005079385A (ja) * | 2003-09-01 | 2005-03-24 | Toshiba Corp | 光半導体装置および光信号入出力装置 |
US7539366B1 (en) * | 2008-01-04 | 2009-05-26 | International Business Machines Corporation | Optical transceiver module |
US8703534B2 (en) * | 2011-01-30 | 2014-04-22 | United Test And Assembly Center Ltd. | Semiconductor packages and methods of packaging semiconductor devices |
US9557478B2 (en) * | 2012-08-28 | 2017-01-31 | Acacia Communications, Inc. | Electronic and optical co-packaging of coherent transceiver |
EP3168641B1 (de) | 2015-11-11 | 2020-06-03 | Ibeo Automotive Systems GmbH | Verfahren und vorrichtung zur optischen distanzmessung |
CN107732651B (zh) * | 2016-08-12 | 2020-08-04 | 美国亚德诺半导体公司 | 光发射器封装件 |
US9798087B1 (en) * | 2016-11-01 | 2017-10-24 | Hewlett Packard Enterprise Development Lp | Optoelectronic devices and wavelength-division multiplexing optical connectors |
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JP2009283712A (ja) * | 2008-05-22 | 2009-12-03 | Fuji Xerox Co Ltd | 光通信モジュールおよび光通信装置 |
US20110044369A1 (en) * | 2009-08-20 | 2011-02-24 | International Business Machines Corporation | Silicon carrier optoelectronic packaging |
CN103137602A (zh) * | 2011-11-30 | 2013-06-05 | 台湾积体电路制造股份有限公司 | 带有抑噪部件的中介层以及半导体封装件 |
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