CN111916511A - Superlattice material embedded with quantum wires, preparation method thereof, infrared band luminescent material and detector - Google Patents

Superlattice material embedded with quantum wires, preparation method thereof, infrared band luminescent material and detector Download PDF

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CN111916511A
CN111916511A CN202010822697.6A CN202010822697A CN111916511A CN 111916511 A CN111916511 A CN 111916511A CN 202010822697 A CN202010822697 A CN 202010822697A CN 111916511 A CN111916511 A CN 111916511A
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CN111916511B (en
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杜鹏
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Hunan Klaette Photoelectric Co ltd
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Abstract

The invention provides a superlattice material embedded with quantum wires, a preparation method thereof, an infrared band luminescent material and a detector. The superlattice material embedded with the quantum wires comprises at least one InAs/GaSb layer and at least one single material layer which are arranged in a stacked mode; the InAs/GaSb layer comprises an InAs part and a GaSb part, and the single material layer comprises InAs or GaSb; InAs portions and GaSb portions are alternately arranged and have different widths in the arrangement direction. The preparation method of the superlattice material embedded with the quantum wires comprises the following steps: and sequentially growing an InAs/GaSb layer and a single substance layer on the substrate according to the structure. An infrared band light emitting material includes a superlattice material with embedded quantum wires. And the detector comprises an infrared band luminescent material. The quantum wire embedded superlattice material provided by the application introduces the quantum wire into the II type superlattice to form a wire-superlattice composite structure, so that the working temperature of a device can be increased, and the photoelectric performance of the material can be improved.

Description

Superlattice material embedded with quantum wires, preparation method thereof, infrared band luminescent material and detector
Technical Field
The invention relates to the field of semiconductors, in particular to a superlattice material embedded with quantum wires, a preparation method thereof, an infrared band luminescent material and a detector.
Background
Group III-V semiconductors have attracted much attention in recent years as important semiconductor optoelectronic materials, and detectors based on lasers with different energy band structures have shown great application prospects in the fields of national defense and civilian use, and have made great research progress in recent years. Further optimizing the quantum structure of the III-V group semiconductor, and improving the photoelectric property of the material plays an important role in promoting the performance of the photoelectronic device.
However, it is easy to find that quantum dot structures can only be introduced into quantum well structures based on I-type band structures. However, in the II-type energy band structure, such as InAs/GaSb system, no relevant report is provided.
In view of this, the present application is specifically made.
Disclosure of Invention
The present invention aims to provide a superlattice material embedded with quantum wires, a preparation method thereof, an infrared band luminescent material and a detector, so as to solve the problems.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a quantum wire embedded superlattice material comprising at least one InAs/GaSb layer and at least one monolayers layer disposed in a stack; the InAs/GaSb layer comprises an InAs part and a GaSb part, and the single material layer comprises InAs or GaSb;
the InAs portions and the GaSb portions are alternately arranged in the InAs/GaSb layer and have different widths along the arrangement direction;
the composition of at least one single material layer in the superlattice structure of the embedded quantum wires is the same as that of the part occupying a larger proportion in the InAs/GaSb layer adjacent to the single material layer.
Preferably, each of the InAs portion and the GaSb portion has a cuboid shape.
Typically, the individual portions are grown layer by layer in the form of monolayers, regularly arranged in stripes having a certain width.
Preferably, in the InAs/GaSb layer, a width of the InAs portion is greater than a width of the GaSb portion in a direction in which the InAs portion and the GaSb portion are aligned;
the single material layer is InAs;
preferably, the width of the GaSb moiety is a single molecule width.
Preferably, in the InAs/GaSb layer, a width of the GaSb portion is greater than a width of the InAs portion along a direction in which the InAs portion and the GaSb portion are aligned;
the single material layer is GaSb;
preferably, the width of the InAs portion is a single molecule width.
When the proportions of the two portions are different, a portion of the material with a low proportion is mixed in a portion of the material with a high proportion, and a quantum wire embedding effect is obtained. When the width of the material with the low ratio is only single-molecule width, the embedding effect is most obvious, and a similar point-hydrazine composite structure is formed on the section of the superlattice material.
Preferably, the superlattice material for embedding quantum wires further comprises a step-shaped substrate;
preferably, the step-shaped substrate includes any one of a GaSb substrate, a GaAs substrate, an InAs substrate, an InP substrate, and a Si substrate;
preferably, the step inclination angle of the step-shaped substrate is 1-10 °.
It should be noted that the step inclination angle referred to herein does not mean that the step surface is inclined, but defines the ratio of the width to the height of the step.
Optionally, the step inclination angle of the stepped substrate may be any value between 1 °, 2 °, 3 °, 4 °, 5 °, 6 °, 7 °, 8 °, 9 °, 10 °, and 1-10 °.
A method for preparing the superlattice material embedded with quantum wires comprises the following steps:
and growing the InAs/GaSb layer and the single material layer on the substrate in sequence according to the structure of the superlattice material embedded with the quantum wires.
Preferably, the growth method of GaSb comprises:
starting a Ga source and an Sb source, observing the coverage rate of GaSb on a substrate through high-energy electron diffraction, then closing the Ga source and the Sb source, and simultaneously extracting residual Sb sources in a reaction cavity to stop the growth of GaSb;
preferably, the temperature of the substrate is 150-: (1-20);
preferably, the growth method of InAs comprises the following steps:
and starting an In source and an As source, observing the coverage rate of InAs on the substrate through high-energy electron diffraction, then closing the In source and the As source, and simultaneously extracting the residual As source In the reaction cavity to stop the growth of the InAs.
By controlling the Ga source and the Sb source and extracting the residual source material, the growth from the minimum to the size of a single molecular layer can be realized, thereby obtaining the superlattice material embedded with quantum wires with different sizes.
Preferably, the migration time of GaSb and InAs on the step of the substrate is less than or equal to 1s, and the migration speed is 0.5-1 ML/s.
The control of the migration time and speed is to grow the superlattice material with the target size on the substrate more accurately.
An infrared band luminescent material comprises the superlattice material embedded with quantum wires.
A detector comprises the infrared band luminescent material.
Compared with the prior art, the invention has the beneficial effects that:
the II type superlattice of InAs/GaSb has too short minority carrier lifetime due to the existence of intrinsic Ga defects, which is not beneficial to further improving the performance of the device. The superlattice material embedded in the quantum wires is the same as a traditional quantum dot structure in a well, and the quantum wire structure still has a strong quantum confinement effect, so that phonon energy levels of the quantum wires are split, the quantum wires have long electronic relaxation time, and therefore minority carrier lifetime can be prolonged by reducing material dimensions under the condition that materials are not changed. The material can greatly improve the luminous intensity, further improve the gain capability of an active region and an absorption region based on the structure, and improve the performance of a laser and a detector.
The preparation method of the superlattice material embedded with the quantum wires adopts a layer-by-layer epitaxial growth mechanism based on Molecular Beam Epitaxy (MBE) to obtain the superlattice material with a target structure, and is simple to operate.
The infrared band luminescent material and the detector are made of the superlattice material embedded with the quantum wires, the structural advantage is obvious, and the long infrared emission characteristic is achieved.
Drawings
To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, and it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope of the present invention.
Fig. 1 is a schematic side view of a superlattice structure embedded in InAs quantum wires as provided in example 1;
FIG. 2 is a schematic view showing the tilt angle of a substrate used in example 1;
fig. 3 is a schematic side view of another superlattice structure embedded in InAs quantum wires as provided in example 1;
FIG. 4 is a schematic right-view of the superlattice structure of the InAs-embedded quantum wire of FIG. 3;
FIG. 5 is a schematic structural diagram, an HR-XRD spectrum in the x-axis and y-axis directions, and an atomic force microscope image of the sample provided in example 1;
FIG. 6 is the EDS mapping experiment result of a single element of the sample provided in example 1 and the spectrum of the line scanning experiment result along the epitaxial direction;
FIG. 7 is the results of the line scan experiment of the energy spectrum of the sample provided in example 1 and the HAADF image of the corresponding region;
FIG. 8 is a structural representation, x-direction and y-direction TEM images and corresponding strain distribution images of the sample provided in example 1;
fig. 9 is a schematic diagram of a superlattice structure embedded in quantum wires provided in example 2;
fig. 10 is a schematic view of another superlattice structure embedded in quantum wires provided in example 2;
fig. 11 is a schematic view of superlattice structures of embedded quantum wires provided in examples 3 and 4;
fig. 12 is a schematic view of a superlattice structure provided in comparative example 1;
fig. 13 is a photoluminescence spectrum of the superlattice materials obtained in example 1 and comparative example 1.
Detailed Description
The terms as used herein:
"prepared from … …" is synonymous with "comprising". The terms "comprises," "comprising," "includes," "including," "has," "having," "contains," "containing," or any other variation thereof, as used herein, are intended to cover a non-exclusive inclusion. For example, a composition, process, method, article, or apparatus that comprises a list of elements is not necessarily limited to only those elements but may include other elements not expressly listed or inherent to such composition, process, method, article, or apparatus.
The conjunction "consisting of … …" excludes any unspecified elements, steps or components. If used in a claim, the phrase is intended to claim as closed, meaning that it does not contain materials other than those described, except for the conventional impurities associated therewith. When the phrase "consisting of … …" appears in a clause of the subject matter of the claims rather than immediately after the subject matter, it defines only the elements described in the clause; other elements are not excluded from the claims as a whole.
When an amount, concentration, or other value or parameter is expressed as a range, preferred range, or as a range of upper preferable values and lower preferable values, this is to be understood as specifically disclosing all ranges formed from any pair of any upper range limit or preferred value and any lower range limit or preferred value, regardless of whether ranges are separately disclosed. For example, when the range "1 ~ 5" is disclosed, the ranges described should be construed to include the ranges "1 ~ 4", "1 ~ 3", "1 ~ 2 and 4 ~ 5", "1 ~ 3 and 5", and the like. When a range of values is described herein, unless otherwise stated, the range is intended to include the endpoints thereof and all integers and fractions within the range.
In these examples, the parts and percentages are by mass unless otherwise indicated.
"part by mass" means a basic unit of measure indicating a mass ratio of a plurality of components, and 1 part may represent any unit mass, for example, 1g or 2.689 g. If we say that the part by mass of the component A is a part by mass and the part by mass of the component B is B part by mass, the ratio of the part by mass of the component A to the part by mass of the component B is a: b. alternatively, the mass of the A component is aK and the mass of the B component is bK (K is an arbitrary number, and represents a multiple factor). It is unmistakable that, unlike the parts by mass, the sum of the parts by mass of all the components is not limited to 100 parts.
"and/or" is used to indicate that one or both of the illustrated conditions may occur, e.g., a and/or B includes (a and B) and (a or B).
Embodiments of the present invention will be described in detail below with reference to specific examples, but those skilled in the art will appreciate that the following examples are only illustrative of the present invention and should not be construed as limiting the scope of the present invention. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
Example 1
As shown in fig. 1, the present embodiment provides a superlattice structure embedded in InAs quantum wires. The superlattice structure embedded in the InAs quantum wires comprises an InAs/GaSb layer 1 and a single material layer 2, wherein the proportion of a GaSb part 10 in the InAs/GaSb layer 1 is 80%, the proportion of an InAs part 11 is 20%, and the single material layer 2 is GaSb.
Wherein the thickness of the InAs/GaSb layer 1 and the single material layer 2 are both 10 ML.
The preparation method comprises the following steps:
the substrate 3 is a GaSb substrate with an inclination angle of 2.86 degrees and a step width of about 6 nm. The growth parameters include: the substrate temperature was 350 ℃ and the III/V beam flow ratio was 1: 1.
As shown in fig. 2, the inclination angle θ represents a ratio of the height and the width of the step surface.
Growth of InAs/GaSb layer 1:
firstly, a Ga source and an Sb source are started, the coverage rate of GaSb is observed through RHEED (high energy electron diffraction), after the Ga source and the Sb source are started for 1s, the Ga source and the Sb source are closed, meanwhile, the residual Sb source in a reaction cavity is extracted, and the growth stop of a GaSb layer is realized. Firstly growing 1ML GaSb on a substrate, and controlling the migration time of the GaSb on the substrate step to be 0-1 s and the migration speed to be 0.5 ML/s. The coverage of the GaSb part 10 on the steps reaches 80 percent, namely 4.8 nm;
following the cessation of growth of the GaSb portion, a 1ML thick InAs portion 11 was grown. Firstly, opening an In source and an As source, observing the coverage rate of InAs through RHEED (high energy electron diffraction), controlling the migration time of the InAs on a substrate step to be 0-1 s and the migration speed to be 0.5ML/s, closing the In source and the As source after opening 1s, and simultaneously extracting the residual As source In a reaction cavity to realize the growth stop of an InAs part 11; the coverage of the InAs part 11 on the step reaches 20 percent, namely 1.2 nm; GaSb coverage + InAs coverage-total step length.
The growth process of the InAs/GaSb layer 1 is repeated for 10 times to obtain 10 ML-thick InAs/GaSb layers 1.
Growth of the single substance layer 2:
firstly, a Ga source and a Sb source are started, and 10ML GaSb are grown on the upper surface of the InAs/GaSb layer 1. And finishing the growth of the InAs/GaSb superlattice structure embedded with the InAs quantum wires in one period.
In an alternative embodiment, an embedded quantum wire superlattice material may contain a plurality of the above-described single period InAs quantum wire embedded InAs/GaSb superlattice structures therein, as shown in fig. 3.
As can be seen from fig. 3 (i.e., the x-axis direction of fig. 5 (a)), the InAs portion of 1ML thickness is embedded in the GaSb portion at a width ratio of 20%; when viewed from the right side of the structure shown in fig. 3, the layered structure shown in fig. 4 (i.e., the y-axis direction in fig. 5 (a)) can be seen, and only the InAs portion, i.e., the InAs quantum wire, is embedded in the GaSb layer in the InAs/GaSb layer 1.
The structural characteristics of the class II superlattice with embedded nanostructures obtained in example 1 were analyzed and characterized, as shown in fig. 5, for high resolution XRD (HR-XRD) spectra and atomic force microscopy images (AFM) of the samples. Wherein (a) in fig. 5 is a schematic structural diagram of a sample, which is grown on a substrate with an inclination angle by using a monolayer distribution epitaxy mode. When the sample is observed in the x direction, the InAs nano structure can be seen on the cross section of the direction, similar to a quantum dot, is embedded in GaSb and is periodic; when the sample is viewed in the y-direction, then in a cross-section in this direction, periodic layers of InAs and GaSb, i.e. superlattice structures, can be seen. This is the so-called nanostructure-embedded class II superlattice structure.
In fig. 5, (b) and (c) are XRD spectra in two directions, respectively. Typical superlattice diffraction peaks can be observed in the y-direction due to the presence of the superlattice structure. Similar to the normalized diffraction peak patterns of the planar InAs/GaSb system superlattice and the planar InAs/InAsSb system superlattice, in the step (b) of FIG. 5, the sample shows a strong diffraction peak and a clearly visible satellite diffraction peak, and the satellite diffraction peak reaches 3 grades, which indicates that the sample has better crystal quality. The 0 th order diffraction peak is not overlapped with the substrate peak, which shows that the epitaxial structure and the substrate have certain mismatch. On the XRD spectrum in the other direction, only diffraction peaks of the epitaxial material can be observed, and satellite peaks are not observed. Indicating that there is no periodic distribution of the superlattice in this direction. In the corresponding AFM results, the surface roughness and surface morphology are also greatly different from those of the completely planar superlattice.
The samples were subjected to energy spectrum analysis, and the distribution states of all elements and a single element are shown in FIG. 6 (HAADF-STEM and EDS tests were performed on the cross-sectional area of the sample). The left region (shown In blue) is a GaSb substrate, and In, As, Ga and Sb can be observed In the epitaxial layer. For the distribution of a single element, it can be seen that four elements of In, As, Ga and Sb are uniformly distributed In the sample. Ga and Sb are not present in the epitaxial layer. Especially on mapping images of As and Ga, a stripe-like distribution can be observed.
Fig. 7 is an HAADF image of the box section of fig. 6, in which the morphology of the superlattice can be seen, with a very distinct interface structure. An average content distribution of all elements In the epitaxial growth direction was obtained, and As shown In fig. 7, the element proportions of In and As were significantly lower than those of Ga and Sb, and the proportions of In and As In the samples were almost equivalent, respectively, to about 13%. While also exhibiting periodic variations. The ratio of Ga to Sb is also close to 1:1 and is about 25% In the whole sample, so that the ratio of In to Ga is about 1:2 In the InAs nano-structure embedded type II superlattice sample and meets the epitaxial design result.
In order to characterize the particular structure of the superlattice in which the quantum wires are embedded, HRTEM was performed and characterized, as shown in fig. 8. Wherein (a) of fig. 8 is a schematic representation of a substrate with tilt and an embedded nanostructured superlattice, and (b) and (c) of fig. 8 are TEM images in different directions and corresponding strain distribution images, respectively. xx is a strain component parallel to the direction of the superlattice interface, yy is a strain component perpendicular to the direction of the superlattice interface, and the GaSb substrate is selected as a reference system of the two strain components. In HRTEM images, a layer-by-layer distribution image unique to the superlattice can be clearly seen, in which the dark line in fig. 8 (b) is an InAs nanostructure, and the slightly bright spot region is a GaSb portion. In fig. 8 (c), we can observe the morphology of quantum dot embedding, although the morphology of quantum dots is not very clear. After conversion by the GPA method, GaSb and InAs are respectively reflected in a compression region (shown as red) and a stretching region (shown as blue-green) as in a planar superlattice. In the xx direction, the lateral alignment of the nanowires can be observed on the strain diagram due to the small size of the nanowires. The line-to-line spacing distance matches the width of the GaSb moiety in the TEM image. In the yy direction, no significant change in strain is seen because no strain is present. In fig. 8 (c), the quantum dots are embedded in GaSb, and thus the dot-dot spacing distance is not large. In the xx direction, strain image conditions similar to those generated after nanowire embedding are also presented. And in the yy direction, a blue-green stretching area can be obviously observed, and the shape of the blue-green stretching area is similar to that of the quantum dots. The TEM test results further verify that the structures we have designed are indeed present.
To investigate the optical properties of this particular superlattice structure, we also performed low temperature PL spectroscopy at 77K. The PL spectrum of the sample is given in fig. 9. Such superlattices each have a long infrared emission characteristic, and it can be seen that the luminescence peak of the sample is located at 5.6 μm, which is caused by the micro-gap emission of the superlattices. Since this sample is still a superlattice system containing Ga, the minority carrier lifetime is short. And the sample has defects, so the luminous intensity is relatively high. However, the luminescence in the wave band can still be shown, and the material is a special InAs/GaSb II type superlattice material with embedded nanowires.
Example 2
Referring to fig. 1, the present embodiment provides a superlattice structure embedded in InAs quantum wires. The superlattice structure embedded in the InAs quantum wires comprises an InAs/GaSb layer 1 and a single material layer 2, wherein the proportion of a GaSb part 10 in the InAs/GaSb layer 1 is 90%, the proportion of an InAs part 11 is 10%, and the single material layer 2 is GaSb.
Wherein the thickness of the InAs/GaSb layer 1 and the single material layer 2 is 20 ML.
The preparation method comprises the following steps:
the substrate 3 is a GaSb substrate with an inclination angle of 2.86 degrees and a step width of about 6 nm. The growth parameters include: the substrate temperature was 550 ℃ and the III/V beam flow ratio was 1: 5.
In other embodiments, the tilt angle of the substrate may be any value between 1-10, such as 1 °, 2 °, 3 °, 4 °, 5 °, 6 °, 7 °, 8 °, 9 °, 10 °.
Growth of InAs/GaSb layer 1:
firstly, a Ga source and an Sb source are started, the coverage rate of GaSb is observed through RHEED (high energy electron diffraction), after the Ga source and the Sb source are started for 1s, the Ga source and the Sb source are closed, meanwhile, the residual Sb source in a reaction cavity is extracted, and the growth stop of a GaSb layer is realized. Firstly growing 1ML GaSb on a substrate, and controlling the migration time of the GaSb on the substrate step to be 0-1 s and the migration speed to be 0.5 ML/s. The coverage of the GaSb part 10 on the step reaches 90%, namely 5.4 nm;
following the cessation of growth of the GaSb portion, a 1ML thick InAs portion 11 was grown. Firstly, opening an In source and an As source, observing the coverage rate of InAs through RHEED (high energy electron diffraction), controlling the migration time of the InAs on a substrate step to be 0-1 s and the migration speed to be 0.5ML/s, closing the In source and the As source after opening 1s, and simultaneously extracting the residual As source In a reaction cavity to realize the growth stop of an InAs part 11; the coverage of the InAs part 11 on the step reaches 10 percent, namely 0.6 nm; GaSb coverage + InAs coverage-total step length.
The growth process of the InAs/GaSb layer 1 is repeated for 20 times to obtain 20 ML-thick InAs/GaSb layers 1.
Growth of the single substance layer 2:
firstly, a Ga source and a Sb source are started, and 20ML GaSb are grown on the upper surface of the InAs/GaSb layer 1. And finishing the growth of the InAs/GaSb superlattice structure embedded with the InAs quantum wires in one period.
In an alternative embodiment, the thicknesses of the InAs/GaSb layer 1 and the monolayer substance layer 2 may be unequal. For example, as shown in fig. 9, the InAs/GaSb layer 1 may be 20ML (note that, in fig. 9, the parting line of the InAs/GaSb layer 1 is merely illustrated), and the single material layer 2 may be 10 ML.
Alternatively, as shown in fig. 10, the InAs/GaSb layer 1 may be 10ML and the single substance layer 2 may be 20ML (note that the dividing line of the single substance layer 2 in fig. 10 is only illustrated schematically).
Example 3
As shown in fig. 11, the present embodiment provides a superlattice structure embedded in GaSb quantum wires. The superlattice structure embedded with the GaSb quantum wires comprises an InAs/GaSb layer 1 and a single material layer 2, wherein the InAs part 11 accounts for 90% of the InAs/GaSb layer 1, the GaSb part 10 accounts for 10% of the InAs/GaSb layer 1, and the single material layer 2 is InAs.
Wherein the thickness of the InAs/GaSb layer 1 and the single material layer 2 are both 10 ML.
The preparation method comprises the following steps:
the substrate 3 is a GaSb substrate with an inclination angle of 2.86 degrees and a step width of about 6 nm. The growth parameters include: the substrate temperature was 150 ℃ and the III/V beam flow ratio was 1: 3.
In other embodiments, the substrate 3 may be any one of a GaAs substrate, an InAs substrate, an InP substrate, and a Si substrate.
Growth of InAs/GaSb layer 1:
firstly, opening an In source and an As source, observing the coverage rate of InAs through RHEED (high energy electron diffraction), controlling the migration time of the InAs on a substrate step to be 0-1 s and the migration speed to be 0.5ML/s, closing the In source and the As source after opening 1s, and simultaneously extracting the residual As source In a reaction cavity to realize the growth stop of an InAs part 11; the coverage of the InAs portion 11 on the step reaches 90%, i.e. 5.4 nm.
And after the InAs part 11 stops growing, starting the Ga source and the Sb source, observing the coverage rate of GaSb through RHEED (high energy electron diffraction), and after starting for 1s, closing the Ga source and the Sb source, and simultaneously extracting the residual Sb source in the reaction cavity to stop the growth of the GaSb layer. Firstly growing 1ML GaSb on a substrate, and controlling the migration time of the GaSb on the substrate step to be 0-1 s and the migration speed to be 0.5 ML/s. The coverage of the GaSb part 10 on the step reaches 10%, namely 0.6 nm; GaSb coverage + InAs coverage-total step length.
The growth process of the InAs/GaSb layer 1 is repeated for 10 times to obtain 10 ML-thick InAs/GaSb layers 1.
Growth of the single substance layer 2:
firstly, an In source and an As source are started, and 10ML InAs are grown on the upper surface of the InAs/GaSb layer 1. And finishing the growth of the InAs/GaSb superlattice structure embedded with the InAs quantum wires in one period.
Example 4
Referring to fig. 11, the present embodiment provides a superlattice structure embedded in GaSb quantum wires. The superlattice structure embedded with the GaSb quantum wires comprises an InAs/GaSb layer 1 and a single material layer 2, wherein the InAs part 11 accounts for 80% of the InAs/GaSb layer 1, the GaSb part 10 accounts for 20% of the InAs/GaSb layer 1, and the single material layer 2 is InAs.
Wherein the thickness of the InAs/GaSb layer 1 and the single material layer 2 are both 10 ML.
The preparation method comprises the following steps:
the substrate 3 is a GaSb substrate with an inclination angle of 2.86 degrees and a step width of about 6 nm. The growth parameters include: the substrate temperature was 350 ℃ and the III/V beam flow ratio was 1: 10.
Growth of InAs/GaSb layer 1:
firstly, opening an In source and an As source, observing the coverage rate of InAs through RHEED (high energy electron diffraction), controlling the migration time of the InAs on a substrate step to be 0-1 s and the migration speed to be 0.5ML/s, closing the In source and the As source after opening 1s, and simultaneously extracting the residual As source In a reaction cavity to realize the growth stop of an InAs part 11; the coverage of the InAs portion 11 on the steps reaches 80%, namely 4.8 nm.
And after the InAs part 11 stops growing, starting the Ga source and the Sb source, observing the coverage rate of GaSb through RHEED (high energy electron diffraction), and after starting for 1s, closing the Ga source and the Sb source, and simultaneously extracting the residual Sb source in the reaction cavity to stop the growth of the GaSb layer. Firstly growing 1ML GaSb on a substrate, and controlling the migration time of the GaSb on the substrate step to be 0-1 s and the migration speed to be 0.5 ML/s. The coverage of the GaSb part 10 on the step reaches 20%, namely 1.2 nm; GaSb coverage + InAs coverage-total step length.
The growth process of the InAs/GaSb layer 1 is repeated for 10 times to obtain 10 ML-thick InAs/GaSb layers 1.
Growth of the single substance layer 2:
firstly, an In source and an As source are started, and 10ML InAs are grown on the upper surface of the InAs/GaSb layer 1. And finishing the growth of the InAs/GaSb superlattice structure embedded with the InAs quantum wires in one period.
When multiple periods of quantum wire embedded InAs/GaSb superlattice structure materials are needed, repeating the steps to finish the structure growth of each period one by one.
Comparative example 1
As shown in fig. 12, in the general InAs/GaSb superlattice structure, the widths of the InAs portion and the GaSb portion are equal, and a single material layer is not provided.
The photoluminescence spectra of the superlattice materials of example 1 and comparative example 1 were tested and are shown in fig. 13.
As can be seen from fig. 13, the photoluminescence spectrum (PL) data of the superlattice material sample with embedded quantum dots in example 1 shows that the luminescence intensity is significantly stronger than that of the ordinary InAs/GaSb superlattice, and the minority lifetime is prolonged due to the quantum structuring of the InAs portion in the InAs/GaSb superlattice. Finally, the luminous intensity of the material is improved.
The superlattice material embedded with the quantum wires can be used for preparing an infrared band luminescent material, and then a detector is prepared.
The superlattice material embedded in the quantum wires introduces a quantum dot structure into a quantum well, and utilizes the phonon bottleneck effect of the quantum dots, namely, the phonon energy level of the quantum dots and the energy level of electrons are split as well due to the quantum confinement effect. The excited electrons need to be coupled with phonons to release certain energy to be relaxed to the conduction band bottom before being relaxed to the ground state, and because the energy of the phonons is fixed, the phonons are difficult to be coupled to proper phonons in a short time like a bulk material, so that the relaxation time of the electrons in the quantum dots is longer, which is beneficial to improving the quantum efficiency of the material and further improving the performance of the device.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Furthermore, those skilled in the art will appreciate that while some embodiments herein include some features included in other embodiments, rather than other features, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments. For example, in the claims above, any of the claimed embodiments may be used in any combination. The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art.

Claims (10)

1. A superlattice material embedded with quantum wires, comprising at least one InAs/GaSb layer and at least one singlet layer in a stacked arrangement; the InAs/GaSb layer comprises an InAs part and a GaSb part, and the single material layer comprises InAs or GaSb;
the InAs portions and the GaSb portions are alternately arranged in the InAs/GaSb layer and have different widths along the arrangement direction;
the composition of at least one single material layer in the superlattice structure of the embedded quantum wires is the same as that of the part occupying a larger proportion in the InAs/GaSb layer adjacent to the single material layer.
2. The quantum wire embedded superlattice material as claimed in claim 1, wherein each of said InAs portions and said GaSb portions is cuboid.
3. The quantum wire embedded superlattice material as claimed in claim 2, wherein said InAs/GaSb layer has a width of said InAs portion greater than a width of said GaSb portion along a direction in which said InAs portion and said GaSb portion are aligned;
the single material layer is InAs;
preferably, the width of the GaSb moiety is a single molecule width.
4. The quantum wire embedded superlattice material as claimed in claim 2, wherein said InAs/GaSb layer has a width of said GaSb portion greater than a width of said InAs portion along a direction in which said InAs portion and said GaSb portion are aligned;
the single material layer is GaSb;
preferably, the width of the InAs portion is a single molecule width.
5. A superlattice material as claimed in any one of claims 1-4, further comprising a stepped substrate;
preferably, the step-shaped substrate includes any one of a GaSb substrate, a GaAs substrate, an InAs substrate, an InP substrate, and a Si substrate;
preferably, the step inclination angle of the step-shaped substrate is 1-10 °.
6. A method of preparing a superlattice material for embedding quantum wires as claimed in any one of claims 1-5, comprising:
and growing the InAs/GaSb layer and the single material layer on the substrate in sequence according to the structure of the superlattice material embedded with the quantum wires.
7. The production method according to claim 6, wherein the GaSb growth method comprises:
starting a Ga source and an Sb source, observing the coverage rate of GaSb on a substrate through high-energy electron diffraction, then closing the Ga source and the Sb source, and simultaneously extracting residual Sb sources in a reaction cavity to stop the growth of GaSb;
preferably, the temperature of the substrate is 150-: (1-20);
preferably, the growth method of InAs comprises the following steps:
and starting an In source and an As source, observing the coverage rate of InAs on the substrate through high-energy electron diffraction, then closing the In source and the As source, and simultaneously extracting the residual As source In the reaction cavity to stop the growth of the InAs.
8. The production method according to claim 6 or 7, wherein the migration time of GaSb and InAs on the step of the substrate is 1s or less, and the migration speed is 0.5-1 ML/s.
9. An infrared band light emitting material comprising the superlattice material as claimed in any one of claims 1 to 5 in which quantum wires are embedded.
10. A detector comprising the infrared band luminescent material according to claim 9.
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