CN111916509A - Back electrode pattern structure of crystalline silicon solar cell - Google Patents
Back electrode pattern structure of crystalline silicon solar cell Download PDFInfo
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- CN111916509A CN111916509A CN202010934896.6A CN202010934896A CN111916509A CN 111916509 A CN111916509 A CN 111916509A CN 202010934896 A CN202010934896 A CN 202010934896A CN 111916509 A CN111916509 A CN 111916509A
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052709 silver Inorganic materials 0.000 claims abstract description 18
- 239000004332 silver Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 abstract description 7
- 238000010248 power generation Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 6
- 230000008719 thickening Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000306 component Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention belongs to the technical field of photovoltaic power generation, and particularly relates to a crystalline silicon solar cell back electrode pattern structure which comprises an electrode pattern positioned on the back surface of a cell, wherein the electrode pattern comprises a main grid, an auxiliary grid and pad points, the main grid and the pad points are silver paste layers, and the auxiliary grid is an aluminum paste layer. According to the back electrode pattern structure of the crystalline silicon solar cell, silver paste is used for replacing aluminum paste on the material of the main grid, the number of pad points is increased, the auxiliary grid bus bar is designed, the flow guiding capacity of the main grid is enhanced, the short-circuit current is favorably improved, the series resistance is reduced, the power of the component is improved, and the internal electric loss is reduced. Meanwhile, in order to reduce the requirement of process precision, a gradually-thickened auxiliary grid structure is designed, and good contact between an auxiliary grid substrate and a pad point is guaranteed.
Description
Technical Field
The invention belongs to the technical field of photovoltaic power generation, and relates to a back electrode pattern structure of a crystalline silicon solar cell.
Background
In recent years, solar energy technology is continuously improved, production cost is continuously reduced, conversion efficiency is continuously improved, and application of photovoltaic power generation is increasingly popularized and rapidly developed. With the acceleration of the process of the photovoltaic power generation technology on line at a flat price, the market only pays attention to high power from the original time, and gradually changes into the comprehensive requirements of high power, long-time stable power generation amount under any installation condition, low attenuation and low cost, so that the power consumption cost of a user side is really reduced. Therefore, how to effectively reduce the electricity consumption cost becomes a general concern in the current industry, the photovoltaic module serving as a core component of photovoltaic system end power generation is important, the high power of the module is a necessary technical channel for promoting the flat price internet surfing, and the improvement of the internal luminous flux of the module and the reduction of the internal electric loss also become a main path for improving the power of the current module. The core device for further determining the unit generated energy of the photovoltaic module is a solar cell, a metal electrode in the solar cell is manufactured as the last working procedure of the crystalline silicon solar cell, and meanwhile, the solar cell is also a key for determining the internal resistance loss of the photovoltaic power generation module and the smooth derivation of the photo-generated current by different welding modes of the series-parallel connection of the photovoltaic module. In the process, consumables such as noble metal slurry, a precise screen printing plate and the like occupy the largest proportion of non-silicon cost in battery preparation materials for a long time, so the design and manufacture of the front and back metal electrodes, particularly the front Ag metal electrode of the crystalline silicon solar battery are closely related to the mass production cost.
In order to reduce the consumption of silver paste, aluminum paste is mostly adopted for a main grid and an auxiliary grid of a back electrode of the existing crystalline silicon solar cell, and the silver paste is adopted for pad points. This design reduces the cost of manufacture, but compared with silver, aluminum is less conductive and less prone to power boosting of the battery assembly, resulting in higher internal electrical losses.
Disclosure of Invention
The invention aims to solve the problems and provides a back electrode pattern structure of a crystalline silicon solar cell.
In order to achieve the purpose, the invention adopts the following technical scheme:
the back electrode pattern structure of the crystalline silicon solar cell comprises an electrode pattern positioned on the back surface of the cell, wherein the electrode pattern comprises a main grid, an auxiliary grid and pad points, the main grid and the pad points are silver paste layers, and the auxiliary grid is an aluminum paste layer.
Furthermore, the auxiliary grid comprises a plurality of auxiliary grid substrates and auxiliary grid bus bars, the auxiliary grid substrates are connected with the auxiliary grid bus bars, each auxiliary grid bus bar is divided into a plurality of sections of auxiliary grid bus bars arranged linearly, a pad point is arranged between every two adjacent sections of auxiliary grid bus bars, and the end parts of the auxiliary grid bus bars are connected with the pad points.
Furthermore, a plurality of auxiliary grid substrates are connected with the pad points or directly connected with the auxiliary grid bus bars.
Furthermore, when the sub-grid base body is connected with the pad point, the end part of the sub-grid base body connected with the pad point is provided with a sub-grid gradually-changing thickening structure, the width of the sub-grid gradually-changing thickening structure is gradually increased from the edge of the pad point to the center, and the sub-grid gradually-changing thickening structure is fixedly connected with the pad point.
Furthermore, the gradually-changed thickened structure of the auxiliary grid is in a water drop shape, and the width of the widest part is 0.3 mm.
Furthermore, the main grid comprises a plurality of main grid lines, the main grid lines are perpendicular to the auxiliary grid base body, the auxiliary grid bus bars are parallel to the main grid lines, and two sides of each main grid line are respectively provided with one auxiliary grid bus bar.
Furthermore, the pad points (3) comprise large pad points and small pad points, wherein the large pad points are arranged at the head and/or tail of each main grid line (11) of each half cell, and a plurality of small pad points are distributed at equal intervals along the length direction of each main grid line (11).
Furthermore, the length of the large pad point is 2.6mm, the width of the large pad point is 1.6mm, the length of the small pad point is 1.6mm, the width of the small pad point is 1mm, the width of the main grid line is 0.15mm, the width of the auxiliary grid bus bar is 0.12mm, and the width of the auxiliary grid substrate is 0.12 mm.
Furthermore, one side of each large pad point is connected with 3 auxiliary grid matrixes, and one side of each small pad point is connected with one auxiliary grid matrix.
Furthermore, the end part of each section of the auxiliary grid bus bar is connected with one end, far away from the pad point, of the gradually-changed thickening structure of the auxiliary grid through an arc-shaped structure.
Compared with the prior art, the invention has the advantages that:
according to the back electrode pattern structure of the crystalline silicon solar cell, silver paste is used for replacing aluminum paste on the material of the main grid, the number of pad points is increased, the auxiliary grid bus bar is designed, the flow guiding capacity of the main grid is enhanced, the short-circuit current is favorably improved, the series resistance is reduced, the power of the component is improved, and the internal electric loss is reduced. Meanwhile, in order to reduce the requirement of process precision, a gradually-thickened auxiliary grid structure is designed, and good contact between an auxiliary grid substrate and a pad point is guaranteed.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Drawings
Fig. 1 is a schematic view of a prior art structure.
FIG. 2 is a schematic diagram of the main gate and pad of the present invention.
Fig. 3 is a schematic diagram of a secondary gate of the present invention.
Fig. 4 is a schematic structural diagram of the present invention.
Fig. 5 is an enlarged view at a in fig. 4.
In the figure: the solar cell comprises a main grid 1, a main grid line 11, an auxiliary grid 2, an auxiliary grid base body 21, an auxiliary grid gradually-changing thickening structure 22, an auxiliary grid bus bar 23, an arc-shaped structure 24, pad points 3 and half cell pieces 100.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention.
As shown in fig. 1, in order to reduce the consumption of silver paste, aluminum paste is mostly used for the main and auxiliary grids of the back electrode of the current crystalline silicon solar cell, and silver paste is used for the pad points. This design reduces the cost of manufacture, but compared with silver, aluminum is less conductive and less prone to power boosting of the battery assembly, resulting in higher internal electrical losses.
The invention provides a back electrode pattern structure of a crystalline silicon solar cell, which comprises an electrode pattern positioned on the back surface of the cell, wherein the electrode pattern comprises a main grid 1, an auxiliary grid 2 and pad points 3, the main grid 1 and the pad points 3 are silver slurry layers, and the auxiliary grid 2 is an aluminum slurry layer, as shown in figure 4. Compare current battery piece design, trade the material of main grid for silver thick liquid by the aluminium thick liquid, strengthened current transmission ability, reduced photovoltaic module's series resistance, improved photovoltaic module's short-circuit current.
And (4) switching the material of the main grid from aluminum paste to silver paste, and changing the shape and size of pad points. This design enhances electrical conductivity, improves component performance and reduces losses. However, the contact between the aluminum paste secondary grid and the silver paste primary grid cannot be guaranteed due to the precision of the machine. Therefore, the invention provides the auxiliary grid 2 which is used for ensuring the contact between the aluminum paste auxiliary grid and the silver paste main grid.
Specifically, as shown in fig. 3, the secondary grid 2 includes a plurality of secondary grid bases 21 and secondary grid bus bars 23, the secondary grid bases 21 are connected to the secondary grid bus bars 23, each secondary grid bus bar 23 is divided into a plurality of secondary grid bus bars 23 arranged linearly, a pad point 3 is arranged between every two adjacent secondary grid bus bars 23, and the end of the secondary grid bus bar 23 is connected to the pad point 3.
The end of each segment of the secondary grid bus bar 23 is connected to the end of the secondary grid thickening structure 22 away from the pad point 3 by an arc-shaped structure 24. The auxiliary grid bus bar 23 is mainly used for enhancing the flow conductivity, so that the internal electric loss is reduced, the short-circuit current is increased, and the series resistance is reduced, so that the power of the component is increased; the shape of the end of the sub-grid bus bar 23 may vary with the shape of the pad point, and is not limited to only the circular arc shape.
A plurality of sub-grid bases 21 are connected to the pad points 3 or directly connected to the sub-grid bus bars 23.
When the sub-grid base body 21 is connected with the pad point 3, the end of the sub-grid base body 21 connected with the pad point 3 is provided with a sub-grid gradually-changing thickening structure 22, the width of the sub-grid gradually-changing thickening structure 22 is gradually increased from the edge of the pad point 3 to the center, and the sub-grid gradually-changing thickening structure 22 is fixedly connected with the pad point 3. The design of the gradually-changed thickening structure 22 of the auxiliary grid strengthens the connection between the auxiliary grid matrix 21 and the pad point 3, reduces the process precision requirement and ensures the good connection between the auxiliary grid matrix and the pad point.
The gradually-thickened sub-grid structure 22 may be in various shapes with gradually-increasing widths, and in this embodiment, the gradually-thickened sub-grid structure 22 is in a drop shape, and the width of the widest part is 0.3 mm.
The main grid 1 comprises a plurality of main grid lines 11, the main grid lines 11 are perpendicular to the auxiliary grid base body 21, the auxiliary grid bus bars 23 are parallel to the main grid lines 11, and two sides of each main grid line 11 are respectively provided with one auxiliary grid bus bar 23.
The pad points 3 include a large pad point and a small pad point, the length of the large pad point is 2.6mm, the width of the large pad point is 1.6mm, the length of the small pad point is 1.6mm, and the width of the small pad point is 1mm, wherein, as shown in fig. 2, each main grid line 11 of each half cell 100 is provided with 2 large pad points and 6 small pad points, the two large pad points are located at the head and tail ends of the main grid line 11, the 6 small pad points are located between the two large pad points and are arranged at equal intervals along the length direction of the main grid line 11. Compare current battery piece design, increased pad point quantity, reduced pad point area, reduced silver thick liquid consumption, strengthened current transmission.
The width of the main grid line 11 is 0.15mm, the width of the auxiliary grid bus bar 23 is 0.12mm, and the width of the auxiliary grid substrate 21 is 0.12 mm.
As shown in fig. 5, one side of each large pad point is connected with 3 sub-grid substrates 21, and one side of each small pad point is connected with one sub-grid substrate 21. The arc-shaped structures 24 are connected to the closest sub-grid bases 21, respectively, so as to connect the sub-grid bases 21, the sub-grid bus bars 23, and the pad points 3 to each other.
The electrode pattern structure of the present invention is compatible with a variety of dimensional designs 158, 166, 180, and 210. According to the back electrode pattern structure of the crystalline silicon solar cell, silver paste is used for replacing aluminum paste on the material of the main grid, the number of pad points is increased, the auxiliary grid bus bar is designed, the flow guiding capacity of the main grid is enhanced, the short-circuit current is favorably improved, the series resistance is reduced, the power of the component is improved, and the internal electric loss is reduced. Meanwhile, in order to reduce the requirement of process precision, a gradually-thickened auxiliary grid structure is designed, and good contact between an auxiliary grid substrate and a pad point is guaranteed.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit of the invention.
Claims (10)
1. The back electrode pattern structure of the crystalline silicon solar cell comprises an electrode pattern positioned on the back surface of the cell, and is characterized in that the electrode pattern comprises a main grid (1), an auxiliary grid (2) and pad points (3), wherein the main grid (1) and the pad points (3) are silver paste layers, and the auxiliary grid (2) is an aluminum paste layer.
2. The crystalline silicon solar cell back electrode pattern structure as defined in claim 1, wherein the sub-grid (2) comprises a plurality of sub-grid substrates (21) and sub-grid bus bars (23), the sub-grid substrates (21) are connected with the sub-grid bus bars (23), each sub-grid bus bar (23) is divided into a plurality of sub-grid bus bars (23) arranged in a straight line, a pad point (3) is arranged between every two adjacent sub-grid bus bars (23), and the end of the sub-grid bus bar (23) is connected with the pad point (3).
3. The crystalline silicon solar cell back electrode pattern structure as defined in claim 2, wherein a plurality of sub-grid bases (21) are connected to the pad points (3) or directly connected to the sub-grid bus bars (23).
4. The crystalline silicon solar cell back electrode pattern structure as claimed in claim 3, wherein when the sub-grid substrate (21) is connected with the pad point (3), the end of the sub-grid substrate (21) connected with the pad point (3) is provided with a sub-grid gradually-thickened structure (22), the width of the sub-grid gradually-thickened structure (22) is gradually increased from the edge of the pad point (3) to the center, and the sub-grid gradually-thickened structure (22) is fixedly connected with the pad point (3).
5. The crystalline silicon solar cell back electrode pattern structure as claimed in claim 4, wherein the sub-grid gradually-thickened structure (22) is drop-shaped, and the width of the widest part is 0.3 mm.
6. The back electrode pattern structure of the crystalline silicon solar cell as claimed in claim 2, wherein the main grid (1) comprises a plurality of main grid lines (11), the main grid lines (11) are perpendicular to the secondary grid substrate (21), the secondary grid bus bars (23) are parallel to the main grid lines (11), and one secondary grid bus bar (23) is respectively arranged on two sides of each main grid line (11).
7. The back electrode pattern structure of the crystalline silicon solar cell as claimed in claim 6, wherein the pad points (3) comprise large pad points and small pad points, wherein the large pad points are arranged at the head and/or tail of each main grid line (11) of each half cell, and a plurality of small pad points are distributed at equal intervals along the length direction of each main grid line (11).
8. The back electrode pattern structure of the crystalline silicon solar cell as claimed in claim 7, wherein the length of the large pad point is 2.6mm, the width is 1.6mm, the length of the small pad point is 1.6mm, the width is 1mm, the width of the main grid line (11) is 0.15mm, the width of the sub-grid bus bar (23) is 0.12mm, and the width of the sub-grid substrate (21) is 0.12 mm.
9. The crystalline silicon solar cell back electrode pattern structure as defined in claim 7, wherein one side of each large pad point is connected with 3 sub-grid substrates (21), and one side of each small pad point is connected with one sub-grid substrate (21).
10. The crystalline silicon solar cell back electrode pattern structure as claimed in claim 4, wherein the end of each section of the sub-grid bus bar (23) is connected with the end of the sub-grid gradually-thickened structure (22) far away from the pad point (3) through an arc-shaped structure (24).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010934896.6A CN111916509A (en) | 2020-09-08 | 2020-09-08 | Back electrode pattern structure of crystalline silicon solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010934896.6A CN111916509A (en) | 2020-09-08 | 2020-09-08 | Back electrode pattern structure of crystalline silicon solar cell |
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| CN111916509A true CN111916509A (en) | 2020-11-10 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023280308A1 (en) * | 2021-07-08 | 2023-01-12 | 天合光能股份有限公司 | Solar cell |
| WO2023061475A1 (en) * | 2021-10-14 | 2023-04-20 | 武宇涛 | Battery string, battery module preparation process, and battery module |
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2020
- 2020-09-08 CN CN202010934896.6A patent/CN111916509A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023280308A1 (en) * | 2021-07-08 | 2023-01-12 | 天合光能股份有限公司 | Solar cell |
| WO2023061475A1 (en) * | 2021-10-14 | 2023-04-20 | 武宇涛 | Battery string, battery module preparation process, and battery module |
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